Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132118) > Сторінка 42 з 2202
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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STP60NF06FP | STMicroelectronics |
 Description: MOSFET N-CH 60V 30A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V |
на замовлення 795 шт: термін постачання 21-31 дні (днів) |
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STP6NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V |
на замовлення 1809 шт: термін постачання 21-31 дні (днів) |
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STP6NK90Z | STMicroelectronics |
 Description: MOSFET N-CH 900V 5.8A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 1063 шт: термін постачання 21-31 дні (днів) |
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STP7NK40Z | STMicroelectronics |
Description: MOSFET N-CH 400V 5.4A TO220AB Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
на замовлення 3301 шт: термін постачання 21-31 дні (днів) |
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STP80NF06 | STMicroelectronics |
Description: MOSFET N-CH 60V 80A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STP80NF55-08 | STMicroelectronics |
Description: MOSFET N-CH 55V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V |
на замовлення 758 шт: термін постачання 21-31 дні (днів) |
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STP9NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 7.2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
на замовлення 744 шт: термін постачання 21-31 дні (днів) |
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STPR1520D | STMicroelectronics |
Description: DIODE STANDARD 200V 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS0520Z | STMicroelectronics |
Description: DIODE SCHOTTKY 20V 500MA SOD123 Current - Reverse Leakage @ Vr: 150 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SOD-123 Current - Average Rectified (Io): 500mA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS0520Z | STMicroelectronics |
Description: DIODE SCHOTTKY 20V 500MA SOD123 Package / Case: SOD-123 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 150 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SOD-123 Current - Average Rectified (Io): 500mA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS10L45CG | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 45V D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS12045TV | STMicroelectronics |
Description: DIODE MOD SCHOTT 45V 60A ISOTOP Current - Reverse Leakage @ Vr: 1 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
на замовлення 376 шт: термін постачання 21-31 дні (днів) |
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STPS15H100CB-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 7.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||
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STPS15H100CB-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK Current - Reverse Leakage @ Vr: 3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 7.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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STPS1H100A | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 100 V |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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STPS1H100A | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS1H100U | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 1A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 100 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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STPS1H100U | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 1A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 100 V |
на замовлення 20078 шт: термін постачання 21-31 дні (днів) |
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STPS1L20M | STMicroelectronics |
Description: DIODE SCHOTTKY 20V 1A STMITE Current - Reverse Leakage @ Vr: 75 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: STmite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Cut Tape (CT) |
на замовлення 19870 шт: термін постачання 21-31 дні (днів) |
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STPS1L20M | STMicroelectronics |
Description: DIODE SCHOTTKY 20V 1A STMITE Supplier Device Package: STmite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 75 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 150°C (Max) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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STPS1L40M | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 1A STMITE Current - Reverse Leakage @ Vr: 63 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: STmite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Tape & Reel (TR) |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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STPS1L40M | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 1A STMITE Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: STmite Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A Current - Reverse Leakage @ Vr: 63 µA @ 40 V |
на замовлення 49497 шт: термін постачання 21-31 дні (днів) |
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STPS2150 | STMicroelectronics |
Description: DIODE SCHOTTKY 150V 2A DO15 Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
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STPS2150 | STMicroelectronics |
Description: DIODE SCHOTTKY 150V 2A DO15 Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS2L60 | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 2A DO41 Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS2L60 | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 2A DO41 Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS3045CP | STMicroelectronics |
Description: DIODE ARRAY SCHOT 45V 15A SOT-93 Packaging: Tube Package / Case: TO-218-3, TO-218AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SOT-93 Operating Temperature - Junction: 200°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS3150RL | STMicroelectronics |
Description: DIODE SCHOTTKY 150V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
на замовлення 5700 шт: термін постачання 21-31 дні (днів) |
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STPS3150RL | STMicroelectronics |
Description: DIODE SCHOTTKY 150V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
на замовлення 6768 шт: термін постачання 21-31 дні (днів) |
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STPS40150CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 150V 20A TO-220 Current - Reverse Leakage @ Vr: 8 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 677 шт: термін постачання 21-31 дні (днів) |
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STPS40150CW | STMicroelectronics |
Description: DIODE ARR SCHOT 150V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A Current - Reverse Leakage @ Vr: 8 µA @ 150 V |
на замовлення 591 шт: термін постачання 21-31 дні (днів) |
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STPS61150CW | STMicroelectronics |
Description: DIODE ARR SCHOT 150V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 150 V |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
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STPS61H100CW | STMicroelectronics |
Description: DIODE ARR SCHOT 100V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A Current - Reverse Leakage @ Vr: 16 µA @ 100 V |
на замовлення 4193 шт: термін постачання 21-31 дні (днів) |
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STPS80150CW | STMicroelectronics |
Description: DIODE ARR SCHOT 150V 40A TO247-3 Current - Reverse Leakage @ Vr: 30 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 3307 шт: термін постачання 21-31 дні (днів) |
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STPS8L30B-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 30V 8A DPAK Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DPAK Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 15299 шт: термін постачання 21-31 дні (днів) |
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STS12NF30L | STMicroelectronics |
Description: MOSFET N-CH 30V 12A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS12NF30L | STMicroelectronics |
Description: MOSFET N-CH 30V 12A 8SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS17NF3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 17A 8SO Rds On (Max) @ Id, Vgs: 5.5mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3.2W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS2DPFS20V | STMicroelectronics |
Description: MOSFET P-CH 20V 2.5A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS2DPFS20V | STMicroelectronics |
Description: MOSFET P-CH 20V 2.5A 8-SOIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS4DNFS30L | STMicroelectronics |
Description: MOSFET N-CH 30V 4A 8SO Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS4DPF30L | STMicroelectronics |
Description: MOSFET 2P-CH 30V 4A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS4DPF30L | STMicroelectronics |
Description: MOSFET 2P-CH 30V 4A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS5DNF20V | STMicroelectronics |
Description: MOSFET 2N-CH 20V 5A 8SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 600mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS5DNF20V | STMicroelectronics |
Description: MOSFET 2N-CH 20V 5A 8SOIC Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Technology: MOSFET (Metal Oxide) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 600mV @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS5PF20V | STMicroelectronics |
Description: MOSFET P-CH 20V 5A 8SO Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 2.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS5PF30L | STMicroelectronics |
Description: MOSFET P-CH 30V 5A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS7C4F30L | STMicroelectronics |
Description: MOSFET N/P-CH 30V 7A/4A 8SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Current - Continuous Drain (Id) @ 25°C: 7A, 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS7PF30L | STMicroelectronics |
Description: MOSFET P-CH 30V 7A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS9NF30L | STMicroelectronics |
Description: MOSFET N-CH 30V 9A 8SO Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STS9NF30L | STMicroelectronics |
Description: MOSFET N-CH 30V 9A 8SO Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STSA851 | STMicroelectronics |
Description: TRANS NPN 60V 5A TO92-3 Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Power - Max: 1.1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-92-3 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A Operating Temperature: 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STT4PF20V | STMicroelectronics |
Description: MOSFET P-CH 20V 3A SOT-23-6 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STT4PF20V | STMicroelectronics |
Description: MOSFET P-CH 20V 3A SOT-23-6 Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Power Dissipation (Max): 1.6W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTA112U | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 1A SMB Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMB Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STTA112U | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 1A SMB Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMB Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTA212S | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 2A SMC Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMC Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTA506D | STMicroelectronics |
Description: DIODE STANDARD 600V 5A TO220AC Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-220AC Current - Average Rectified (Io): 5A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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STTH1506DPI | STMicroelectronics |
Description: DIODE STANDARD 600V 15A DOP3I Packaging: Tube Package / Case: DOP3I-2 Insulated (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: DOP3I Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 15 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 442 шт: термін постачання 21-31 дні (днів) |
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STTH1L06A | STMicroelectronics |
Description: DIODE STANDARD 600V 1A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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| STP60NF06FP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Description: MOSFET N-CH 60V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
на замовлення 795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.57 грн |
| 10+ | 89.59 грн |
| 50+ | 67.64 грн |
| 100+ | 56.82 грн |
| 500+ | 45.14 грн |
| STP6NK60Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Description: MOSFET N-CH 600V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
на замовлення 1809 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.57 грн |
| 10+ | 135.92 грн |
| 50+ | 104.15 грн |
| 100+ | 88.14 грн |
| 500+ | 71.29 грн |
| STP6NK90Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 5.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 900V 5.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 1063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 310.14 грн |
| 10+ | 196.86 грн |
| 50+ | 153.04 грн |
| 100+ | 130.39 грн |
| 500+ | 107.19 грн |
| STP7NK40Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 5.4A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 400V 5.4A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 3301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 181.97 грн |
| 10+ | 112.68 грн |
| 50+ | 85.66 грн |
| 100+ | 72.23 грн |
| 500+ | 57.89 грн |
| STP80NF06 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP80NF55-08 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
на замовлення 758 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.45 грн |
| 10+ | 131.27 грн |
| 50+ | 100.34 грн |
| 100+ | 84.83 грн |
| 500+ | 68.45 грн |
| STP9NK50Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: MOSFET N-CH 500V 7.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 253.17 грн |
| 50+ | 122.28 грн |
| 100+ | 110.53 грн |
| 500+ | 84.39 грн |
| STPR1520D |
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE STANDARD 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS0520Z |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 20V 500MA SOD123
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 500MA SOD123
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STPS0520Z |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 20V 500MA SOD123
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 20V 500MA SOD123
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| STPS10L45CG |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 45V D2PAK
Description: DIODE ARRAY SCHOTTKY 45V D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STPS12045TV |
|
Виробник: STMicroelectronics
Description: DIODE MOD SCHOTT 45V 60A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MOD SCHOTT 45V 60A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
на замовлення 376 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1471.56 грн |
| 10+ | 1019.52 грн |
| 100+ | 817.35 грн |
| STPS15H100CB-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| STPS15H100CB-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.36 грн |
| 10+ | 56.68 грн |
| 100+ | 37.39 грн |
| 500+ | 27.30 грн |
| 1000+ | 24.80 грн |
| STPS1H100A |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.86 грн |
| 17+ | 18.44 грн |
| STPS1H100A |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| STPS1H100U |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 7.82 грн |
| 7500+ | 6.46 грн |
| STPS1H100U |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
на замовлення 20078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.81 грн |
| 15+ | 20.49 грн |
| 50+ | 14.83 грн |
| 100+ | 12.18 грн |
| 500+ | 9.13 грн |
| STPS1L20M |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 20V 1A STMITE
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 1A STMITE
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
на замовлення 19870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.53 грн |
| 20+ | 15.92 грн |
| 100+ | 9.45 грн |
| 500+ | 7.66 грн |
| 1000+ | 6.84 грн |
| 2000+ | 6.41 грн |
| 5000+ | 5.88 грн |
| STPS1L20M |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 20V 1A STMITE
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Description: DIODE SCHOTTKY 20V 1A STMITE
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12000+ | 5.64 грн |
| STPS1L40M |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A STMITE
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1A STMITE
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12000+ | 5.83 грн |
| 24000+ | 4.97 грн |
| 36000+ | 4.94 грн |
| STPS1L40M |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A STMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A STMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
на замовлення 49497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.11 грн |
| 18+ | 16.99 грн |
| 100+ | 10.14 грн |
| 500+ | 8.11 грн |
| 1000+ | 7.11 грн |
| 2000+ | 6.64 грн |
| 5000+ | 6.06 грн |
| STPS2150 |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.65 грн |
| 16+ | 19.05 грн |
| 100+ | 11.99 грн |
| 500+ | 8.40 грн |
| STPS2150 |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS2L60 |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| STPS2L60 |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
од. на суму грн.
| STPS3045CP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 45V 15A SOT-93
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: 200°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARRAY SCHOT 45V 15A SOT-93
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: 200°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS3150RL |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 5700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1900+ | 11.72 грн |
| 3800+ | 10.26 грн |
| 5700+ | 9.74 грн |
| STPS3150RL |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 6768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.47 грн |
| 11+ | 28.49 грн |
| 100+ | 18.24 грн |
| 500+ | 12.98 грн |
| STPS40150CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 150V 20A TO-220
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOTT 150V 20A TO-220
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 677 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.75 грн |
| 50+ | 56.19 грн |
| 100+ | 55.22 грн |
| 500+ | 51.29 грн |
| STPS40150CW |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 150V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Description: DIODE ARR SCHOT 150V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
на замовлення 591 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.43 грн |
| 30+ | 130.41 грн |
| 120+ | 106.22 грн |
| 510+ | 83.02 грн |
| STPS61150CW |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 150V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Description: DIODE ARR SCHOT 150V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.11 грн |
| 30+ | 136.02 грн |
| 120+ | 130.67 грн |
| STPS61H100CW |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 100V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 16 µA @ 100 V
Description: DIODE ARR SCHOT 100V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 16 µA @ 100 V
на замовлення 4193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 314.88 грн |
| 30+ | 167.79 грн |
| 60+ | 151.52 грн |
| 120+ | 129.36 грн |
| 510+ | 108.75 грн |
| STPS80150CW |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 150V 40A TO247-3
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARR SCHOT 150V 40A TO247-3
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 3307 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 409.03 грн |
| 30+ | 220.66 грн |
| 60+ | 199.95 грн |
| 120+ | 171.30 грн |
| 510+ | 145.07 грн |
| STPS8L30B-TR |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 30V 8A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 8A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 15299 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.25 грн |
| 10+ | 48.99 грн |
| 100+ | 37.71 грн |
| 500+ | 27.64 грн |
| 1000+ | 25.18 грн |
| STS12NF30L |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| STS12NF30L |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 12A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Description: MOSFET N-CH 30V 12A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
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| STS17NF3LL |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 17A 8SO
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.2W (Tc)
Description: MOSFET N-CH 30V 17A 8SO
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.2W (Tc)
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| STS2DPFS20V |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 2.5A 8-SOIC
Description: MOSFET P-CH 20V 2.5A 8-SOIC
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| STS2DPFS20V |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 2.5A 8-SOIC
Description: MOSFET P-CH 20V 2.5A 8-SOIC
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| STS4DNFS30L |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| STS4DPF30L |
|
Виробник: STMicroelectronics
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| STS4DPF30L |
|
Виробник: STMicroelectronics
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| STS5DNF20V |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| STS5DNF20V |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
Description: MOSFET 2N-CH 20V 5A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
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| STS5PF20V |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 5A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET P-CH 20V 5A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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| STS5PF30L |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| STS7C4F30L |
|
Виробник: STMicroelectronics
Description: MOSFET N/P-CH 30V 7A/4A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A, 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 7A/4A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A, 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| STS7PF30L |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| STS9NF30L |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| STS9NF30L |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| STSA851 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 60V 5A TO92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Operating Temperature: 150°C (TJ)
Description: TRANS NPN 60V 5A TO92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Operating Temperature: 150°C (TJ)
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| STT4PF20V |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 3A SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3A SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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| STT4PF20V |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 3A SOT-23-6
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Description: MOSFET P-CH 20V 3A SOT-23-6
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
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| STTA112U |
|
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 1A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1.2KV 1A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| STTA112U |
|
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 1A SMB
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 1.2KV 1A SMB
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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| STTA212S |
|
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 2A SMC
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMC
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1.2KV 2A SMC
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMC
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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| STTA506D |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 600V 5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Мінімальне замовлення: 2000 шт
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| STTH1506DPI |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 15A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE STANDARD 600V 15A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 442 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.97 грн |
| 30+ | 228.00 грн |
| 120+ | 222.94 грн |
| STTH1L06A |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 14.55 грн |
| 15000+ | 12.39 грн |