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Назва	Виробник	Інформація	Доступність	Ціна
PGSMAJ14A M2G	Taiwan Semiconductor Corporation	Description: TVS DIODE 14VWM 23.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
PGSMAJ14AHR3G	Taiwan Semiconductor Corporation	Description: TVS DIODE 14VWM 23.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
SMAJ14A R3G	Taiwan Semiconductor Corporation	Description: TVS DIODE 14VWM 23.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Discontinued at Digi-Key	товару немає в наявності	В кошику од. на суму грн.
PGSMAJ14A R3G	Taiwan Semiconductor Corporation	Description: TVS DIODE 14VWM 23.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
P4KE39A R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
P4KE39A A0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
P4KE39AHR0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
P4KE39A R1G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
P4KE39AHR1G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
P4KE39AHA0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
P4KE39A B0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3VWM 53.9VC DO204AL	товару немає в наявності	В кошику од. на суму грн.
P4KE39AHB0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
1.5KE7.5CAHA0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
1.5KE7.5CAHB0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
TS10P05G D2G	Taiwan Semiconductor Corporation	Description: BRIDGE RECT 1P 600V 10A TS-6P	на замовлення 1119 шт: термін постачання 21-31 дні (днів)	В кошику од. на суму грн.
TS10P05G C2G	Taiwan Semiconductor Corporation	Description: BRIDGE RECT 1P 600V 10A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V	товару немає в наявності	В кошику од. на суму грн.
TS10P05GHC2G	Taiwan Semiconductor Corporation	Description: BRIDGE RECT 1P 600V 10A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Grade: Automotive Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
TS10P05GHD2G	Taiwan Semiconductor Corporation	Description: BRIDGE RECT 1P 600V 10A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Grade: Automotive Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
MBR3035CT C0G	Taiwan Semiconductor Corporation	Description: DIODE ARR SCHOTT 35V 30A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V	товару немає в наявності	В кошику од. на суму грн.
MBR3035CTHC0G	Taiwan Semiconductor Corporation	Description: DIODE ARR SCHOTT 35V 30A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
MBR3035PT C0G	Taiwan Semiconductor Corporation	Description: DIODE ARR SCHOTT 35V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V	товару немає в наявності	В кошику од. на суму грн.
BZW04-26B R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 25.6V 41.5V DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-273B R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 273V 438V DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-28B R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 28.2VWM 45.7VC DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-299B R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 299V 482V DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-31B R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 30.8V 49.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-33B R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 33.3V 53.9V DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-342B R0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 342V 548V DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-40HR0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 40.2V 64.8V DO204AL	товару немає в наявності	В кошику од. на суму грн.
BZW04-40 R1G	Taiwan Semiconductor Corporation	Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active	товару немає в наявності	В кошику од. на суму грн.
BZW04-40HR1G	Taiwan Semiconductor Corporation	Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
BZW04-40 A0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active	товару немає в наявності	В кошику од. на суму грн.
BZW04-40HA0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
BZW04-40HB0G	Taiwan Semiconductor Corporation	Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
RS1GAL M3G	Taiwan Semiconductor Corporation	Description: 150NS, 1A, 400V, FAST RECOVERY R	на замовлення 7000 шт: термін постачання 21-31 дні (днів)	В кошику од. на суму грн.
RS1GAL M3G	Taiwan Semiconductor Corporation	Description: 150NS, 1A, 400V, FAST RECOVERY R	на замовлення 7000 шт: термін постачання 21-31 дні (днів)	В кошику од. на суму грн.
ES1F R3G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1F R3G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FL RVG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FL RVG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1F M2G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A DO214AC	товару немає в наявності	В кошику од. на суму грн.
ES1FHM2G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A DO214AC	товару немає в наявності	В кошику од. на суму грн.
ES1FL RQG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FLHRQG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA	товару немає в наявності	В кошику од. на суму грн.
ES1FLHRVG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
ES1FL RUG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FHR3G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A DO214AC	товару немає в наявності	В кошику од. на суму грн.
ES1FLHR3G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA	товару немає в наявності	В кошику од. на суму грн.
ES1FL RHG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FLHRHG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
ES1FL M2G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FL MHG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FLHM2G	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
ES1FLHMHG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
ES1FL MQG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FL MTG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V	товару немає в наявності	В кошику од. на суму грн.
ES1FL RTG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA	товару немає в наявності	В кошику од. на суму грн.
ES1FLHMQG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA	товару немає в наявності	В кошику од. на суму грн.
ES1FLHMTG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA	товару немає в наявності	В кошику од. на суму грн.
ES1FLHRTG	Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 300V 1A SUB SMA	товару немає в наявності	В кошику од. на суму грн.

PGSMAJ14A M2G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101

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PGSMAJ14AHR3G

товару немає в наявності

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SMAJ14A R3G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key

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PGSMAJ14A R3G

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P4KE39A R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

товару немає в наявності

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P4KE39A A0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

товару немає в наявності

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P4KE39AHR0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

товару немає в наявності

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P4KE39A R1G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

товару немає в наявності

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P4KE39AHR1G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

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P4KE39AHA0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

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P4KE39A B0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AL

товару немає в наявності

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P4KE39AHB0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

товару немає в наявності

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1.5KE7.5CAHA0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101

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1.5KE7.5CAHB0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101

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TS10P05G D2G

Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P

на замовлення 1119 шт:

термін постачання 21-31 дні (днів)

В кошику од. на суму грн.

TS10P05G C2G

Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V

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TS10P05GHC2G

Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101

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TS10P05GHD2G

Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101

товару немає в наявності

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MBR3035CT C0G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V

товару немає в наявності

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MBR3035CTHC0G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101

товару немає в наявності

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MBR3035PT C0G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V

товару немає в наявності

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BZW04-26B R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 41.5V DO204AL

товару немає в наявності

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BZW04-273B R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 273V 438V DO204AL

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BZW04-28B R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO204AL

товару немає в наявності

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BZW04-299B R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 299V 482V DO204AL

товару немає в наявності

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BZW04-31B R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8V 49.9V DO204AL

товару немає в наявності

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BZW04-33B R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL

товару немає в наявності

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BZW04-342B R0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 342V 548V DO204AL

товару немає в наявності

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BZW04-40HR0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL

товару немає в наявності

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BZW04-40 R1G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active

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BZW04-40HR1G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

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BZW04-40 A0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active

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BZW04-40HA0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

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BZW04-40HB0G

Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

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RS1GAL M3G

Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R

на замовлення 7000 шт:

термін постачання 21-31 дні (днів)

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RS1GAL M3G

Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R

на замовлення 7000 шт:

термін постачання 21-31 дні (днів)

В кошику од. на суму грн.

ES1F R3G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

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ES1F R3G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

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ES1FL RVG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

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ES1FL RVG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

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ES1F M2G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC

товару немає в наявності

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ES1FHM2G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC

товару немає в наявності

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ES1FL RQG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

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ES1FLHRQG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA

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ES1FLHRVG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101

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ES1FL RUG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

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ES1FHR3G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC

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ES1FLHR3G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA

товару немає в наявності

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ES1FL RHG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

В кошику од. на суму грн.

ES1FLHRHG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101

товару немає в наявності

В кошику од. на суму грн.

ES1FL M2G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

В кошику од. на суму грн.

ES1FL MHG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

В кошику од. на суму грн.

ES1FLHM2G

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101

товару немає в наявності

В кошику од. на суму грн.

ES1FLHMHG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101

товару немає в наявності

В кошику од. на суму грн.

ES1FL MQG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

В кошику од. на суму грн.

ES1FL MTG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V

товару немає в наявності

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ES1FL RTG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA

товару немає в наявності

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ES1FLHMQG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA

товару немає в наявності

В кошику од. на суму грн.

ES1FLHMTG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA

товару немає в наявності

В кошику од. на суму грн.

ES1FLHRTG

Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA

товару немає в наявності

В кошику од. на суму грн.