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BZW04-40HR1G BZW04-40HR1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
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BZW04-40 A0G BZW04-40 A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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BZW04-40HA0G BZW04-40HA0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Power - Peak Pulse: 400W
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BZW04-40HB0G BZW04-40HB0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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RS1GAL M3G RS1GAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 400V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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RS1GAL M3G RS1GAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 400V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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ES1FL RVG ES1FL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL RVG ES1FL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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ES1F M2G ES1F M2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FHM2G ES1FHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FL RQG ES1FL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FLHRQG ES1FLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FLHRVG ES1FLHRVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FL RUG ES1FL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FHR3G ES1FHR3G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FLHR3G ES1FLHR3G Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FL RHG ES1FL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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ES1FLHRHG ES1FLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL M2G ES1FL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL MHG ES1FL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FLHM2G ES1FLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
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ES1FLHMHG ES1FLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
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ES1FL MQG ES1FL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL MTG ES1FL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FL RTG ES1FL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FLHMQG ES1FLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FLHMTG ES1FLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FLHRTG ES1FLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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1N5255B A0G 1N5255B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 28V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 44 Ohms
Voltage - Zener (Nom) (Vz): 28 V
Operating Temperature: 100°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 14VWM 25.8VC DO214AC
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Qualification: AEC-Q101
Grade: Automotive
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SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 14VWM 25.8VC DO214AC
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Qualification: AEC-Q101
Grade: Automotive
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SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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P6SMB39A M4G P6SMB39A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
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P6SMB39AHM4G P6SMB39AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
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P6SMB39AHR5G P6SMB39AHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 53.9V
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1KSMB39A M4G 1KSMB39A M4G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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1KSMB39AHM4G 1KSMB39AHM4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
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1KSMB39A R5G 1KSMB39A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
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1KSMB39AHR5G 1KSMB39AHR5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
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S2JA R3G S2JA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
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P4KE16CA R1G P4KE16CA R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
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P4KE16CAHR1G P4KE16CAHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
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P4KE16CA A0G P4KE16CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
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P4KE16CAHA0G P4KE16CAHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
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P4KE16CA B0G P4KE16CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
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P4KE16CAHB0G P4KE16CAHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
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RSFJL RVG RSFJL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
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RSFJL RVG RSFJL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
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RSFJL R3G RSFJL R3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
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RSFJL M2G RSFJL M2G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
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RSFJL RQG RSFJL RQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
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RSFJL RTG RSFJL RTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
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RSFJLHM2G RSFJLHM2G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
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RSFJLHRQG RSFJLHRQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
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RSFJLHRTG RSFJLHRTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
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RSFJL RUG RSFJL RUG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
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RSFJLHR3G RSFJLHR3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
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BZW04-40HR1G BZW04%20SERIES_J2104.pdf
BZW04-40HR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
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BZW04-40 A0G BZW04%20SERIES_J2104.pdf
BZW04-40 A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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BZW04-40HA0G BZW04%20SERIES_J2104.pdf
BZW04-40HA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Power - Peak Pulse: 400W
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BZW04-40HB0G BZW04%20SERIES_J2104.pdf
BZW04-40HB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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RS1GAL M3G
RS1GAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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RS1GAL M3G
RS1GAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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ES1FL RVG ES1AL%20SERIES_L2103.pdf
ES1FL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL RVG ES1AL%20SERIES_L2103.pdf
ES1FL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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ES1F M2G ES1A%20SERIES_M15.pdf
ES1F M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FHM2G ES1A%20SERIES_M15.pdf
ES1FHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FL RQG ES1AL%20SERIES_L2103.pdf
ES1FL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FLHRQG ES1AL%20SERIES_K15.pdf
ES1FLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FLHRVG ES1AL%20SERIES_L2103.pdf
ES1FLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FL RUG ES1AL%20SERIES_L2103.pdf
ES1FL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FHR3G ES1A%20SERIES_M15.pdf
ES1FHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FLHR3G ES1AL%20SERIES_K15.pdf
ES1FLHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FL RHG ES1AL%20SERIES_L2103.pdf
ES1FL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
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ES1FLHRHG ES1AL%20SERIES_L2103.pdf
ES1FLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL M2G ES1AL%20SERIES_L2103.pdf
ES1FL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL MHG ES1AL%20SERIES_L2103.pdf
ES1FL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FLHM2G ES1AL%20SERIES_L2103.pdf
ES1FLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
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ES1FLHMHG ES1AL%20SERIES_L2103.pdf
ES1FLHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
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ES1FL MQG ES1AL%20SERIES_L2103.pdf
ES1FL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL MTG ES1AL%20SERIES_L2103.pdf
ES1FL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FL RTG ES1AL%20SERIES_K15.pdf
ES1FL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товару немає в наявності
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ES1FLHMQG ES1AL%20SERIES_K15.pdf
ES1FLHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товару немає в наявності
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ES1FLHMTG ES1AL%20SERIES_K15.pdf
ES1FLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товару немає в наявності
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ES1FLHRTG ES1AL%20SERIES_K15.pdf
ES1FLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товару немає в наявності
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1N5255B A0G 1N5221B%20SERIES_G1804.pdf
1N5255B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 28V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 44 Ohms
Voltage - Zener (Nom) (Vz): 28 V
Operating Temperature: 100°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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SMAJ14CHR3G
SMAJ14CHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Qualification: AEC-Q101
Grade: Automotive
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SMAJ14CHR3G
SMAJ14CHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Qualification: AEC-Q101
Grade: Automotive
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SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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P6SMB39A M4G P6SMB%20SERIES_P2102.pdf
P6SMB39A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товару немає в наявності
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P6SMB39AHM4G P6SMB%20SERIES_P2102.pdf
P6SMB39AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товару немає в наявності
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P6SMB39AHR5G P6SMB%20SERIES_Q2209.pdf
P6SMB39AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 53.9V
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1KSMB39A M4G 1KSMB SERIES_A2102.pdf
1KSMB39A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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1KSMB39AHM4G 1KSMB SERIES_H1902.pdf
1KSMB39AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
1KSMB39A R5G 1KSMB SERIES_H1902.pdf
1KSMB39A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
1KSMB39AHR5G 1KSMB SERIES_H1902.pdf
1KSMB39AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
S2JA R3G S2AA%20SERIES_J15.pdf
S2JA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
P4KE16CA R1G P4KE%20SERIES_M1602.pdf
P4KE16CA R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
P4KE16CAHR1G P4KE%20SERIES_M1602.pdf
P4KE16CAHR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товару немає в наявності
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P4KE16CA A0G P4KE%20SERIES_N2104.pdf
P4KE16CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
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P4KE16CAHA0G P4KE%20SERIES_M1602.pdf
P4KE16CAHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
P4KE16CA B0G P4KE%20SERIES_M1602.pdf
P4KE16CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
P4KE16CAHB0G P4KE%20SERIES_M1602.pdf
P4KE16CAHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
RSFJL RVG RSFAL%20SERIES_L15.pdf
RSFJL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJL RVG RSFAL%20SERIES_L15.pdf
RSFJL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
RSFJL R3G RSFAL%20SERIES_L15.pdf
RSFJL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJL M2G RSFAL%20SERIES_L15.pdf
RSFJL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJL RQG RSFAL%20SERIES_L15.pdf
RSFJL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJL RTG RSFAL%20SERIES_L15.pdf
RSFJL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJLHM2G RSFAL%20SERIES_L15.pdf
RSFJLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJLHRQG RSFAL%20SERIES_L15.pdf
RSFJLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJLHRTG RSFAL%20SERIES_L15.pdf
RSFJLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJL RUG RSFAL%20SERIES_L15.pdf
RSFJL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RSFJLHR3G RSFAL%20SERIES_L15.pdf
RSFJLHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
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