Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25198) > Сторінка 161 з 420
| Фото | Назва | Виробник | Інформація |
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ES1FL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES3HB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 3A DO214AA |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ES3HB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 3A DO214AA |
на замовлення 4035 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C22-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 350MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C22 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 500MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C22S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 200MW SOD323FPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C22K RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 200MW SOD523FPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-523F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 17 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GLW RVG | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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HS1GLW RVG | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 11040 шт: термін постачання 21-31 дні (днів) |
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HS1G R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1G R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AC |
на замовлення 1789 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP5M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 346pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP5M45SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 5A SMPC4.6UPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 589pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP5M45SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 5A SMPC4.6UPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 589pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP10M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A SMPC4.6UPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 658pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP10M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A SMPC4.6UPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 658pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP15M45SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1803pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP15M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 15A SMPC4.6UPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1046pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSUP15M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 15A SMPC4.6UPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1046pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 547 шт: термін постачання 21-31 дні (днів) |
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HS1GL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL R3G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL MQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSF40U100C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB |
на замовлення 565 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RS1MAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 1A, 1000V, FAST RECOVERY |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RS1MAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 1A, 1000V, FAST RECOVERY |
на замовлення 3816 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMC20A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMC20A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMC20A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMC20AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMC20A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSH282CT B0G | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH TO92S |
на замовлення 4687 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TSH181CT B0G | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH TO92SPackaging: Bulk Features: Temperature Compensated Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Open Collector Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.5V ~ 20V Technology: Hall Effect Sensing Range: ±9mT Trip, ±0.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 4mA Supplier Device Package: TO-92 Test Condition: -40°C ~ 125°C Part Status: Active |
на замовлення 9471 шт: термін постачання 21-31 дні (днів) |
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TSH251CT B0G | Taiwan Semiconductor Corporation |
Description: HALL EFFECT SWITCH, OMNI-POLAR, |
на замовлення 9944 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TSH188CT B0G | Taiwan Semiconductor Corporation |
Description: HALL EFFECT SWITCH, LATCH, 2.5 - |
на замовлення 9948 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TSH481CT B0G | Taiwan Semiconductor Corporation |
Description: HALL EFFECT SENSOR, LINEAR, 3 - |
на замовлення 9747 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54 RFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 200MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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AZ23C27 RFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER ARRAY 27V SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AZ23C30 RFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER ARRAY 30V SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX585B4V3 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 200MW SOD523FPackaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ14AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Discontinued at Digi-Key Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ14AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PGSMAJ14AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
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SMAJ14A M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PGSMAJ14A M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PGSMAJ14AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SMAJ14A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PGSMAJ14A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P4KE39A R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P4KE39A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P4KE39AHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P4KE39A R1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. |
| ES1FL R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| ES3HB R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 3A DO214AA
Description: DIODE GEN PURP 500V 3A DO214AA
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ES3HB R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 3A DO214AA
Description: DIODE GEN PURP 500V 3A DO214AA
на замовлення 4035 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BZT52C22-G RHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
Description: DIODE ZENER 22V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C22 RHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
Description: DIODE ZENER 22V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C22S RRG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C22K RKG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Description: DIODE ZENER 22V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товару немає в наявності
В кошику
од. на суму грн.
| HS1GLW RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.00 грн |
| 6000+ | 11.57 грн |
| 9000+ | 11.08 грн |
| HS1GLW RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 11040 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 12+ | 29.73 грн |
| 100+ | 22.35 грн |
| 500+ | 16.04 грн |
| 1000+ | 14.00 грн |
| HS1G R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Description: DIODE GEN PURP 400V 1A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| HS1G R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Description: DIODE GEN PURP 400V 1A DO214AC
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS1GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS1GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS1GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS1GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TSUP5M60SH S1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TSUP5M45SH S1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TSUP5M45SH S1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TSUP10M60SH S1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TSUP10M60SH S1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| TSUP15M45SH S1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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| TSUP15M60SH S1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
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| TSUP15M60SH S1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 547 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.84 грн |
| 10+ | 135.11 грн |
| 100+ | 97.03 грн |
| 500+ | 75.27 грн |
| HS1GL RQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| HS1GL R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| HS1GL RHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| HS1GL M2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| HS1GL MHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| HS1GL MQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| HS1GL MTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| HS1GL RTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| TSF40U100C C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 565 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS1MAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
Description: 500NS, 1A, 1000V, FAST RECOVERY
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS1MAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
Description: 500NS, 1A, 1000V, FAST RECOVERY
на замовлення 3816 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1.5SMC20A V6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
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| 1.5SMC20A V7G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
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| 1.5SMC20A R7G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
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| 1.5SMC20AHR7G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
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| 1.5SMC20A M6G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
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| TSH282CT B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
Description: MAGNETIC SWITCH TO92S
на замовлення 4687 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TSH181CT B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±9mT Trip, ±0.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 4mA
Supplier Device Package: TO-92
Test Condition: -40°C ~ 125°C
Part Status: Active
Description: MAGNETIC SWITCH TO92S
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±9mT Trip, ±0.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 4mA
Supplier Device Package: TO-92
Test Condition: -40°C ~ 125°C
Part Status: Active
на замовлення 9471 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 253.01 грн |
| 10+ | 198.96 грн |
| 25+ | 161.41 грн |
| 50+ | 140.91 грн |
| 100+ | 133.86 грн |
| 500+ | 112.72 грн |
| 1000+ | 103.95 грн |
| 5000+ | 97.02 грн |
| TSH251CT B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, OMNI-POLAR,
Description: HALL EFFECT SWITCH, OMNI-POLAR,
на замовлення 9944 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TSH188CT B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, LATCH, 2.5 -
Description: HALL EFFECT SWITCH, LATCH, 2.5 -
на замовлення 9948 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TSH481CT B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: HALL EFFECT SENSOR, LINEAR, 3 -
Description: HALL EFFECT SENSOR, LINEAR, 3 -
на замовлення 9747 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAT54 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.99 грн |
| 6000+ | 1.78 грн |
| 9000+ | 1.53 грн |
| AZ23C27 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 27V SOT23
Description: DIODE ZENER ARRAY 27V SOT23
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| AZ23C30 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 30V SOT23
Description: DIODE ZENER ARRAY 30V SOT23
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| BZX585B4V3 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Description: DIODE ZENER 4.3V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
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| SMAJ14AHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
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| SMAJ14AHM2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Description: TVS DIODE 14VWM 23.2VC DO214AC
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| PGSMAJ14AHM2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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| SMAJ14A M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Description: TVS DIODE 14VWM 23.2VC DO214AC
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| PGSMAJ14A M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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| PGSMAJ14AHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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| SMAJ14A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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| PGSMAJ14A R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| P4KE39A R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
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| P4KE39A A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
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| P4KE39AHR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
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| P4KE39A R1G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
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