Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25120) > Сторінка 165 з 419
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RS3D M6G | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 200V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S3D M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S4D M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 4A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S5D M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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YBS3005G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 3A YBS Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: YBS Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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YBS3005G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 3A YBS Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: YBS Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SMAJ20CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 35.8VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.2A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 35.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SMAJ20CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 35.8VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.2A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 35.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SMAJ20HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 35.8VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.2A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 35.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SMAJ20HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 35.8VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.2A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 35.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1SMB5936 M4G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1SMB5936 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1SMB5936HM4G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1SMB5936HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 3W DO214AA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 26 Ohms Supplier Device Package: DO-214AA (SMB) Grade: Automotive Part Status: Discontinued at Digi-Key Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 22.8 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BZX79C2V7 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 2.7V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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ESH1C R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A DO214AC |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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ESH1C R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A DO214AC |
на замовлення 7038 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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MBRF1645HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1.5KE220AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 185VWM 328VC DO201 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 4.8A Voltage - Reverse Standoff (Typ): 185V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1.5KE220A B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 185VWM 328VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.8A Voltage - Reverse Standoff (Typ): 185V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1.5KE220AHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 185VWM 328VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 4.8A Voltage - Reverse Standoff (Typ): 185V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S4J V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 4A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S4J V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 4A DO214AB |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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S4J M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 4A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S4J V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 4A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||
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RS2KAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 2A, 800V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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RS2KAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 2A, 800V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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RS2KFS M3G | Taiwan Semiconductor Corporation | Description: 500NS, 2A, 800V, FAST RECOVERY R |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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RS2KFS M3G | Taiwan Semiconductor Corporation | Description: 500NS, 2A, 800V, FAST RECOVERY R |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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HS2J R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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HS2J R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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UGF8J C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A ITO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||
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UGF8JHC0G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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UGF8JD C0G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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UGF8JDHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A ITO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BZW06-31 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1KSMB16A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 13.6V 22.5V DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BZT55C3V3 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BZT55C3V3 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BZT55C13 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BZT55C13 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||
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UR4KB80-B C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 4A D3K |
товару немає в наявності |
В кошику од. на суму грн. | ||
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P4SMA43A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8V 59.3V DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||
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P4SMA43A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8V 59.3V DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||
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TSF40H200C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 200V ITO220AB |
на замовлення 1655 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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SK810CHM6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 8A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SK810C R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 8A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SK810C R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 8A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SK810C V6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 8A 100V DO-214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SK810CHR7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 8A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SK810C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 8A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SK810C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 8A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SK810C M6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 8A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S8MC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 8A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S8MC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 8A DO214AB |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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S8MC V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 8A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S8MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 8A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S8MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 8A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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В кошику од. на суму грн. | ||
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S8MCHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 8A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||
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S8MC M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 8A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
| RS3D M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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В кошику
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| S3D M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| S4D M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| S5D M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| YBS3005G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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В кошику
од. на суму грн.
| YBS3005G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ20CHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SMAJ20CHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ20HR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ20HR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| 1SMB5936 M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
Description: DIODE ZENER 30V 3W DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5936 R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
Description: DIODE ZENER 30V 3W DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5936HM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
Description: DIODE ZENER 30V 3W DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5936HR5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 22.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 22.8 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BZX79C2V7 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Description: DIODE ZENER 2.7V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| ESH1C R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
Description: DIODE GEN PURP 150V 1A DO214AC
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ESH1C R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
Description: DIODE GEN PURP 150V 1A DO214AC
на замовлення 7038 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MBRF1645HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| 1.5KE220AHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| 1.5KE220A B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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В кошику
од. на суму грн.
| 1.5KE220AHB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| S4J V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Description: DIODE GEN PURP 600V 4A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S4J V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Description: DIODE GEN PURP 600V 4A DO214AB
на замовлення 230 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| S4J M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Description: DIODE GEN PURP 600V 4A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S4J V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Description: DIODE GEN PURP 600V 4A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| RS2KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
Description: 500NS, 2A, 800V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
Description: 500NS, 2A, 800V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2KFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
Description: 500NS, 2A, 800V, FAST RECOVERY R
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2KFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
Description: 500NS, 2A, 800V, FAST RECOVERY R
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS2J R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Description: DIODE GEN PURP 600V 2A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| HS2J R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Description: DIODE GEN PURP 600V 2A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| UGF8J C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Description: DIODE GEN PURP 600V 8A ITO220AC
товару немає в наявності
В кошику
од. на суму грн.
| UGF8JHC0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| UGF8JD C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| UGF8JDHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Description: DIODE GEN PURP 600V 8A ITO220AC
товару немає в наявності
В кошику
од. на суму грн.
| BZW06-31 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| 1KSMB16A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO214AA
Description: TVS DIODE 13.6V 22.5V DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| BZT55C3V3 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Description: DIODE ZENER 3.3V 500MW MINI MELF
товару немає в наявності
В кошику
од. на суму грн.
| BZT55C3V3 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Description: DIODE ZENER 3.3V 500MW MINI MELF
товару немає в наявності
В кошику
од. на суму грн.
| BZT55C13 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW MINI MELF
Description: DIODE ZENER 13V 500MW MINI MELF
товару немає в наявності
В кошику
од. на суму грн.
| BZT55C13 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW MINI MELF
Description: DIODE ZENER 13V 500MW MINI MELF
товару немає в наявності
В кошику
од. на суму грн.
| UR4KB80-B C2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A D3K
Description: BRIDGE RECT 1PHASE 800V 4A D3K
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA43A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AC
Description: TVS DIODE 36.8V 59.3V DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA43A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AC
Description: TVS DIODE 36.8V 59.3V DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| TSF40H200C C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Description: DIODE ARRAY SCHOTT 200V ITO220AB
на замовлення 1655 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SK810CHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SK810C R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SK810C R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SK810C V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 8A 100V DO-214AB
Description: DIODE SCHOTTKY 8A 100V DO-214AB
товару немає в наявності
В кошику
од. на суму грн.
| SK810CHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SK810C V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SK810C V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SK810C M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| S8MC V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
Description: DIODE GEN PURP 1KV 8A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S8MC V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
Description: DIODE GEN PURP 1KV 8A DO214AB
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.84 грн |
| S8MC V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Description: DIODE GEN PURP 8A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S8MC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| S8MC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| S8MCHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| S8MC M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Description: DIODE GEN PURP 8A DO214AB
товару немає в наявності
В кошику
од. на суму грн.