Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25571) > Сторінка 165 з 427
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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,-TO-263AB.jpg "SFS1603GHMNG") |
SFS1603GHMNG | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 150V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||||
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TSF20U100C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB |
на замовлення 2895 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RS1GL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 800MA SUBSMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 9pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS1GL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1GL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1MFS MXG | Taiwan Semiconductor Corporation |
Description: DIODE, FAST, 1A, 1000V |
товару немає в наявності |
Мінімальне замовлення: 28000 шт В кошику од. на суму грн. | ||||||||||||||||
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TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 78A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 78A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V |
на замовлення 10891 шт: термін постачання 21-31 дні (днів) |
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ES2AAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2AAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2AAHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2AA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2A R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2AHM4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ES2AHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Qualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK35B M4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK35BHM4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK35B R5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK35BHR5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS13 R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
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ES2GAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||||
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ES2GAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ES2GFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||||
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ES2GFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
на замовлення 6990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SK315A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AC |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
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SK315A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AC |
на замовлення 956 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SMCJ51A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMCJ51A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMCJ51A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMCJ51AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51V 82.4V DO214AB |
товару немає в наявності |
Мінімальне замовлення: 1700 шт В кошику од. на суму грн. | ||||||||||||||||
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SA160CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 160VWM 259VC DO204AC Voltage - Reverse Standoff (Typ): 160V Current - Peak Pulse (10/1000µs): 2A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 259V Voltage - Breakdown (Min): 178V Bidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SA160CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 160V 259V DO204AC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SA160CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 160V 259V DO204AC |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||||
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TS19501CB10 RBG | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER CTRLR PWM 10MSOP Grade: Automotive Voltage - Supply (Max): 38V Voltage - Supply (Min): 8V Dimming: Analog, PWM Supplier Device Package: 10-MSOP-EP Topology: SEPIC, Step-Down (Buck), Step-Up (Boost) Internal Switch(s): No Applications: Lighting Operating Temperature: -40°C ~ 125°C (TA) Type: DC DC Controller Frequency: 70kHz ~ 700kHz Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 0V ~ 18V Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TS19501CB10 RBG | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER CTRLR PWM 10MSOP Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad Voltage - Output: 0V ~ 18V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 70kHz ~ 700kHz Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Internal Switch(s): No Topology: SEPIC, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 10-MSOP-EP Dimming: Analog, PWM Voltage - Supply (Min): 8V Voltage - Supply (Max): 38V Grade: Automotive |
на замовлення 14966 шт: термін постачання 21-31 дні (днів) |
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MBR7150HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 7.5A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBRF7150HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHTKY 150V 7.5A ITO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C7V5 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 500MW SOD123F Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 900 nA @ 5 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BZT52C7V5 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 500MW SOD123F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 900 nA @ 5 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C75 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 500MW SOD123F Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 255 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52C75 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 500MW SOD123F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 255 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V |
на замовлення 5675 шт: термін постачання 21-31 дні (днів) |
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P4KE68CA R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO204AL |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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P4KE68CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO204AL |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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SK515C V6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 5A 150V DO-214AB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SK515C R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK515C R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK515CHR7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK515C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 5A 150V DO-214AB |
на замовлення 761 шт: термін постачання 21-31 дні (днів) |
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SK515C M6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK515CHM6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
| SFS1603GHMNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| TSF20U100C C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)
| RS1GL RQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ES1GL RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RS1GL RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| S1GL RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| RS1GL RTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Description: DIODE GEN PURP 400V 800MA SUBSMA
товару немає в наявності
В кошику
од. на суму грн.
| S1GL RTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| HS1GL RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RS1GL RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Description: DIODE GP 400V 800MA SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
товару немає в наявності
В кошику
од. на суму грн.
| S1GL RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| HS1GL RUG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
товару немає в наявності
В кошику
од. на суму грн.
| S1GL RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| RS1MFS MXG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 1000V
Description: DIODE, FAST, 1A, 1000V
товару немає в наявності
Мінімальне замовлення: 28000 шт
В кошику
од. на суму грн.
| TSM038N03PQ33 RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.80 грн |
| 10000+ | 16.81 грн |
| TSM038N03PQ33 RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 10891 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.82 грн |
| 10+ | 48.06 грн |
| 100+ | 31.52 грн |
| 500+ | 22.90 грн |
| 1000+ | 20.76 грн |
| 2000+ | 18.95 грн |
| ES2AAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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| ES2AAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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| ES2AA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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| ES2AA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
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В кошику
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| ES2AAHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| ES2AA M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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од. на суму грн.
| ES2A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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В кошику
од. на суму грн.
| ES2AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 50V 2A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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В кошику
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| ES2AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Description: DIODE GEN PURP 50V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
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| SK35B M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| SK35BHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| SK35B R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SK35BHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS13 R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| ES2GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| ES2GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| ES2GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| ES2GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)
| SK315A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
Description: DIODE SCHOTTKY 150V 3A DO214AC
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| SK315A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
Description: DIODE SCHOTTKY 150V 3A DO214AC
на замовлення 956 шт:
термін постачання 21-31 дні (днів)
| SMCJ51A V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Description: TVS DIODE 51VWM 82.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ51A R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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| SMCJ51A V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Description: TVS DIODE 51VWM 82.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ51AHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51V 82.4V DO214AB
Description: TVS DIODE 51V 82.4V DO214AB
товару немає в наявності
Мінімальне замовлення: 1700 шт
В кошику
од. на суму грн.
| SA160CA B0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO204AC
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Description: TVS DIODE 160VWM 259VC DO204AC
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
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В кошику
од. на суму грн.
| SA160CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SA160CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| TS19501CB10 RBG |
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Grade: Automotive
Voltage - Supply (Max): 38V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 10-MSOP-EP
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Controller
Frequency: 70kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0V ~ 18V
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER CTRLR PWM 10MSOP
Grade: Automotive
Voltage - Supply (Max): 38V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 10-MSOP-EP
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Controller
Frequency: 70kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0V ~ 18V
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TS19501CB10 RBG |
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
на замовлення 14966 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.62 грн |
| 10+ | 219.01 грн |
| 25+ | 207.00 грн |
| 100+ | 168.37 грн |
| 250+ | 159.73 грн |
| 500+ | 143.33 грн |
| 1000+ | 118.90 грн |
| 2500+ | 112.95 грн |
| MBR7150HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| MBRF7150HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHTKY 150V 7.5A ITO220AC
Description: DIODE SCHTKY 150V 7.5A ITO220AC
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C7V5 RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZT52C7V5 RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| BZT52C75 RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.55 грн |
| BZT52C75 RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
на замовлення 5675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 30+ | 10.00 грн |
| 100+ | 4.90 грн |
| 500+ | 3.83 грн |
| 1000+ | 2.66 грн |
| P4KE68CA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Description: TVS DIODE 58.1VWM 92VC DO204AL
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| P4KE68CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Description: TVS DIODE 58.1VWM 92VC DO204AL
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SK515C V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 150V DO-214AB
Description: DIODE SCHOTTKY 5A 150V DO-214AB
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SK515C R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Description: DIODE SCHOTTKY 150V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SK515C R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Description: DIODE SCHOTTKY 150V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SK515CHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Description: DIODE SCHOTTKY 150V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SK515C V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 150V DO-214AB
Description: DIODE SCHOTTKY 5A 150V DO-214AB
на замовлення 761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.37 грн |
| 10+ | 70.07 грн |
| 100+ | 54.64 грн |
| SK515C M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Description: DIODE SCHOTTKY 150V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SK515CHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Description: DIODE SCHOTTKY 150V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.