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BZT52C22S RRG BZT52C22S RRG Taiwan Semiconductor Corporation pdf.php?pn=BZT52C22S Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
товар відсутній
BZT52C22K RKG BZT52C22K RKG Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_F1806.pdf Description: DIODE ZENER 22V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
HS1GLW RVG HS1GLW RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+10.22 грн
6000+ 9.34 грн
9000+ 8.68 грн
Мінімальне замовлення: 3000
HS1GLW RVG HS1GLW RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 11100 шт:
термін постачання 21-31 дні (днів)
10+30.57 грн
11+ 24.99 грн
100+ 17.35 грн
500+ 12.71 грн
1000+ 10.33 грн
Мінімальне замовлення: 10
HS1G R3G HS1G R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
HS1G R3G HS1G R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
HS1GFS M3G HS1GFS M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS1GFS M3G HS1GFS M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS1GAL M3G HS1GAL M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS1GAL M3G HS1GAL M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
TSUP5M60SH S1G TSUP5M60SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
TSUP5M45SH S1G TSUP5M45SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSUP5M45SH S1G TSUP5M45SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+100.24 грн
10+ 78.93 грн
100+ 61.37 грн
500+ 48.81 грн
Мінімальне замовлення: 3
TSUP10M60SH S1G TSUP10M60SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSUP10M60SH S1G TSUP10M60SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)
3+110.19 грн
10+ 88.1 грн
100+ 70.11 грн
500+ 55.68 грн
Мінімальне замовлення: 3
TSUP15M45SH TSUP15M45SH Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSUP15M45SH S1G TSUP15M45SH S1G Taiwan Semiconductor Corporation TSUP15M45SH_B2103.pdf Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
на замовлення 2973 шт:
термін постачання 21-31 дні (днів)
2+162.09 грн
10+ 140.2 грн
100+ 112.67 грн
500+ 86.88 грн
Мінімальне замовлення: 2
TSUP15M60SH S1G TSUP15M60SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
TSUP15M60SH S1G TSUP15M60SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 621 шт:
термін постачання 21-31 дні (днів)
2+143.6 грн
10+ 115.08 грн
100+ 91.56 грн
500+ 72.71 грн
Мінімальне замовлення: 2
HS1GL RQG HS1GL RQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL R3G HS1GL R3G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL RHG HS1GL RHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL M2G HS1GL M2G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL MHG HS1GL MHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL MQG HS1GL MQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL MTG HS1GL MTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL RTG HS1GL RTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
TSF40U100C C0G TSF40U100C C0G Taiwan Semiconductor Corporation TSF40U100C_B2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 565 шт:
термін постачання 21-31 дні (днів)
RS1MAL M3G RS1MAL M3G Taiwan Semiconductor Corporation Description: 500NS, 1A, 1000V, FAST RECOVERY
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1MAL M3G RS1MAL M3G Taiwan Semiconductor Corporation Description: 500NS, 1A, 1000V, FAST RECOVERY
на замовлення 3816 шт:
термін постачання 21-31 дні (днів)
1.5SMC20A V6G 1.5SMC20A V6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20A V7G 1.5SMC20A V7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20A R7G 1.5SMC20A R7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20AHR7G 1.5SMC20AHR7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20A M6G 1.5SMC20A M6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
TSH282CT B0G TSH282CT B0G Taiwan Semiconductor Corporation TSH282_B13.pdf Description: MAGNETIC SWITCH TO92S
на замовлення 4687 шт:
термін постачання 21-31 дні (днів)
TSH181CT B0G TSH181CT B0G Taiwan Semiconductor Corporation TSH181_B13.pdf Description: MAGNETIC SWITCH TO92S
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±9mT Trip, ±0.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 4mA
Supplier Device Package: TO-92
Test Condition: -40°C ~ 125°C
Part Status: Active
на замовлення 9471 шт:
термін постачання 21-31 дні (днів)
2+209.72 грн
10+ 164.91 грн
25+ 133.79 грн
50+ 116.8 грн
100+ 110.96 грн
500+ 93.44 грн
1000+ 86.16 грн
5000+ 80.42 грн
Мінімальне замовлення: 2
TSH251CT B0G TSH251CT B0G Taiwan Semiconductor Corporation TSH251_B14.pdf Description: HALL EFFECT SWITCH, OMNI-POLAR,
на замовлення 9944 шт:
термін постачання 21-31 дні (днів)
TSH188CT B0G TSH188CT B0G Taiwan Semiconductor Corporation TSH188_C13.pdf Description: HALL EFFECT SWITCH, LATCH, 2.5 -
на замовлення 9948 шт:
термін постачання 21-31 дні (днів)
TSH481CT B0G TSH481CT B0G Taiwan Semiconductor Corporation TSH481_A14.pdf Description: HALL EFFECT SENSOR, LINEAR, 3 -
на замовлення 9747 шт:
термін постачання 21-31 дні (днів)
BAT54 RFG BAT54 RFG Taiwan Semiconductor Corporation BAT54%20SERIES_E14.pdf Description: DIODE SCHOTTKY 30V 200MA SOT23
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
3000+3.14 грн
6000+ 2.63 грн
15000+ 2.23 грн
30000+ 1.97 грн
Мінімальне замовлення: 3000
AZ23C27 RFG AZ23C27 RFG Taiwan Semiconductor Corporation AZ23C2V7%20SERIES_C14.pdf Description: DIODE ZENER ARRAY 27V SOT23
товар відсутній
AZ23C30 RFG AZ23C30 RFG Taiwan Semiconductor Corporation AZ23C2V7%20SERIES_C14.pdf Description: DIODE ZENER ARRAY 30V SOT23
товар відсутній
BZX585B4V3 RSG BZX585B4V3 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 4.3V 200MW SOD523F
товар відсутній
SMAJ14AHR3G SMAJ14AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+8.64 грн
Мінімальне замовлення: 1800
SMAJ14AHR3G SMAJ14AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3667 шт:
термін постачання 21-31 дні (днів)
10+29.15 грн
13+ 22.04 грн
100+ 13.21 грн
500+ 11.48 грн
Мінімальне замовлення: 10
SMAJ14AHM2G SMAJ14AHM2G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
товар відсутній
PGSMAJ14AHM2G PGSMAJ14AHM2G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJ14A M2G SMAJ14A M2G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
товар відсутній
PGSMAJ14A M2G PGSMAJ14A M2G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PGSMAJ14AHR3G PGSMAJ14AHR3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ14A R3G SMAJ14A R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
PGSMAJ14A R3G PGSMAJ14A R3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4KE39A R0G P4KE39A R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39A A0G P4KE39A A0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39AHR0G P4KE39AHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39A R1G P4KE39A R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39AHR1G P4KE39AHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39AHA0G P4KE39AHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39A B0G P4KE39A B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AL
товар відсутній
BZT52C22S RRG pdf.php?pn=BZT52C22S
BZT52C22S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
товар відсутній
BZT52C22K RKG BZT52C2V7K%20SERIES_F1806.pdf
BZT52C22K RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
HS1GLW RVG
HS1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.22 грн
6000+ 9.34 грн
9000+ 8.68 грн
Мінімальне замовлення: 3000
HS1GLW RVG
HS1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 11100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.57 грн
11+ 24.99 грн
100+ 17.35 грн
500+ 12.71 грн
1000+ 10.33 грн
Мінімальне замовлення: 10
HS1G R3G HS1A%20SERIES_L2102.pdf
HS1G R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
HS1G R3G HS1A%20SERIES_L2102.pdf
HS1G R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
HS1GFS M3G
HS1GFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS1GFS M3G
HS1GFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS1GAL M3G
HS1GAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS1GAL M3G
HS1GAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
TSUP5M60SH S1G
TSUP5M60SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
TSUP5M45SH S1G
TSUP5M45SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSUP5M45SH S1G
TSUP5M45SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+100.24 грн
10+ 78.93 грн
100+ 61.37 грн
500+ 48.81 грн
Мінімальне замовлення: 3
TSUP10M60SH S1G
TSUP10M60SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSUP10M60SH S1G
TSUP10M60SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+110.19 грн
10+ 88.1 грн
100+ 70.11 грн
500+ 55.68 грн
Мінімальне замовлення: 3
TSUP15M45SH
TSUP15M45SH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSUP15M45SH S1G TSUP15M45SH_B2103.pdf
TSUP15M45SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
на замовлення 2973 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+162.09 грн
10+ 140.2 грн
100+ 112.67 грн
500+ 86.88 грн
Мінімальне замовлення: 2
TSUP15M60SH S1G
TSUP15M60SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
TSUP15M60SH S1G
TSUP15M60SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 621 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+143.6 грн
10+ 115.08 грн
100+ 91.56 грн
500+ 72.71 грн
Мінімальне замовлення: 2
HS1GL RQG HS1AL%20SERIES_C2103.pdf
HS1GL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL R3G HS1AL%20SERIES_C2103.pdf
HS1GL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL RHG HS1AL%20SERIES_C2103.pdf
HS1GL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL M2G HS1AL%20SERIES_C2103.pdf
HS1GL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL MHG HS1AL%20SERIES_C2103.pdf
HS1GL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL MQG HS1AL%20SERIES_C2103.pdf
HS1GL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL MTG HS1AL%20SERIES_C2103.pdf
HS1GL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL RTG HS1AL%20SERIES_C2103.pdf
HS1GL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
TSF40U100C C0G TSF40U100C_B2105.pdf
TSF40U100C C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 565 шт:
термін постачання 21-31 дні (днів)
RS1MAL M3G
RS1MAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1MAL M3G
RS1MAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
на замовлення 3816 шт:
термін постачання 21-31 дні (днів)
1.5SMC20A V6G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20A V7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20A R7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20AHR7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20AHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
1.5SMC20A M6G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
товар відсутній
TSH282CT B0G TSH282_B13.pdf
TSH282CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
на замовлення 4687 шт:
термін постачання 21-31 дні (днів)
TSH181CT B0G TSH181_B13.pdf
TSH181CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±9mT Trip, ±0.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 4mA
Supplier Device Package: TO-92
Test Condition: -40°C ~ 125°C
Part Status: Active
на замовлення 9471 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+209.72 грн
10+ 164.91 грн
25+ 133.79 грн
50+ 116.8 грн
100+ 110.96 грн
500+ 93.44 грн
1000+ 86.16 грн
5000+ 80.42 грн
Мінімальне замовлення: 2
TSH251CT B0G TSH251_B14.pdf
TSH251CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, OMNI-POLAR,
на замовлення 9944 шт:
термін постачання 21-31 дні (днів)
TSH188CT B0G TSH188_C13.pdf
TSH188CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, LATCH, 2.5 -
на замовлення 9948 шт:
термін постачання 21-31 дні (днів)
TSH481CT B0G TSH481_A14.pdf
TSH481CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: HALL EFFECT SENSOR, LINEAR, 3 -
на замовлення 9747 шт:
термін постачання 21-31 дні (днів)
BAT54 RFG BAT54%20SERIES_E14.pdf
BAT54 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT23
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.14 грн
6000+ 2.63 грн
15000+ 2.23 грн
30000+ 1.97 грн
Мінімальне замовлення: 3000
AZ23C27 RFG AZ23C2V7%20SERIES_C14.pdf
AZ23C27 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 27V SOT23
товар відсутній
AZ23C30 RFG AZ23C2V7%20SERIES_C14.pdf
AZ23C30 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 30V SOT23
товар відсутній
BZX585B4V3 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B4V3 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD523F
товар відсутній
SMAJ14AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ14AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+8.64 грн
Мінімальне замовлення: 1800
SMAJ14AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ14AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3667 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.15 грн
13+ 22.04 грн
100+ 13.21 грн
500+ 11.48 грн
Мінімальне замовлення: 10
SMAJ14AHM2G SMAJ%20SERIES_U2102.pdf
SMAJ14AHM2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
товар відсутній
PGSMAJ14AHM2G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ14AHM2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJ14A M2G SMAJ%20SERIES_U2102.pdf
SMAJ14A M2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
товар відсутній
PGSMAJ14A M2G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ14A M2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PGSMAJ14AHR3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ14AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ14A R3G SMAJ%20SERIES_U2102.pdf
SMAJ14A R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
PGSMAJ14A R3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ14A R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4KE39A R0G P4KE%20SERIES_M1602.pdf
P4KE39A R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39A A0G P4KE%20SERIES_M1602.pdf
P4KE39A A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39AHR0G P4KE%20SERIES_M1602.pdf
P4KE39AHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39A R1G P4KE%20SERIES_M1602.pdf
P4KE39A R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39AHR1G P4KE%20SERIES_M1602.pdf
P4KE39AHR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39AHA0G P4KE%20SERIES_M1602.pdf
P4KE39AHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
P4KE39A B0G P4KE%20SERIES_N2104.pdf
P4KE39A B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AL
товар відсутній
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