Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22301) > Сторінка 159 з 372
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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HS2FA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 1.5A DO214AC |
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HER204G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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HER202G R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 2A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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HER203G R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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HER204G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 2A DO204AC |
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HER207G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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HER207G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 2A DO204AC |
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HER202G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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HER202G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 2A DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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HER203G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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HER204G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 2A DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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HER207G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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HS2MFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 1000V, HIGH EFFICIENT |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2MFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 1000V, HIGH EFFICIENT |
на замовлення 9396 шт: термін постачання 21-31 дні (днів) |
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BZT55C10 L1G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 10V 500MW MINI MELF |
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BZT55C10 L0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 10V 500MW MINI MELF |
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TSM120N10PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 100V 58A 8PDFN |
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TSM120N10PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 100V 58A 8PDFN |
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BAS21C RFG | Taiwan Semiconductor Corporation | Description: DIODE ARRAY GP 250V 200MA SOT23 |
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BZT55C2V7 L1G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 2.7V 500MW MINI MELF |
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BZT55C2V7 L0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 2.7V 500MW MINI MELF |
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SR315 R0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 3A DO201AD |
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SR315HR0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 3A DO201AD |
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SR315HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
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SR315 B0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
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SR315HB0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
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SMAJ90AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 90VWM 146VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.1A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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SMAJ90AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 90VWM 146VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.1A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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GBL204 D2G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 400V 2A GBL |
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GBL206 D2G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 800V 2A GBL |
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GBL207 D2G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 1KV 2A GBL |
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GBL201 D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 50V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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GBL201HD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 50V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Qualification: AEC-Q101 |
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GBL203 D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 200V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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GBL203HD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 200V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
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GBL204HD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
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GBL205HD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
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GBL206HD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
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GBL207HD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
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KBL601G T0 | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 50V 6A KBL |
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KBL602G T0 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 6A KBL Packaging: Tray Package / Case: 4-SIP, KBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBL Part Status: Discontinued at Digi-Key Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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KBL604G T0 | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 400V 6A KBL |
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KBL605G T0 | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 600V 6A KBL |
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KBL607G T0 | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 1KV 6A KBL |
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KBL601G T0G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 50V 6A KBL |
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KBL602G T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 6A KBL Packaging: Tray Package / Case: 4-SIP, KBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBL Part Status: Obsolete Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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KBL603G T0G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 200V 6A KBL |
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KBL604G T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 6A KBL Packaging: Tray Package / Case: 4-SIP, KBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBL Part Status: Obsolete Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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KBL605G T0G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 600V 6A KBL |
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KBL607G T0G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 1KV 6A KBL |
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RS1DAL M3G | Taiwan Semiconductor Corporation | Description: 150NS, 1A, 200V, FAST RECOVERY R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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RS1DAL M3G | Taiwan Semiconductor Corporation | Description: 150NS, 1A, 200V, FAST RECOVERY R |
на замовлення 6998 шт: термін постачання 21-31 дні (днів) |
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SFS1602G MNG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 16A TO263AB |
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SFS1602GHMNG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 16A TO263AB |
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SFT12G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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SFT13G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 150V 1A TS-1 |
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SFT14G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1A TS-1 |
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SFT16G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A TS-1 |
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SFT17G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 500V 1A TS-1 |
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TSS70L RWG | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 70V 70MA 1005 |
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HS2FA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1.5A DO214AC
Description: DIODE GEN PURP 300V 1.5A DO214AC
товар відсутній
HER204G A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER202G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Description: DIODE GEN PURP 300V 2A DO204AC
товар відсутній
HER207G A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HER207G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Description: DIODE GEN PURP 800V 2A DO204AC
товар відсутній
HER202G A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER202G B0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G B0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G B0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER207G B0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS2MFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)HS2MFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 9396 шт:
термін постачання 21-31 дні (днів)BZT55C10 L1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
BZT55C10 L0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
TSM120N10PQ56 RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Description: MOSFET N-CH 100V 58A 8PDFN
товар відсутній
TSM120N10PQ56 RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Description: MOSFET N-CH 100V 58A 8PDFN
товар відсутній
BAS21C RFG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 250V 200MA SOT23
Description: DIODE ARRAY GP 250V 200MA SOT23
товар відсутній
BZT55C2V7 L1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
BZT55C2V7 L0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
SR315 R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HR0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR315 B0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SR315HB0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ90AHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
SMAJ90AHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
GBL204 D2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Description: BRIDGE RECT 1PHASE 400V 2A GBL
товар відсутній
GBL206 D2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
Description: BRIDGE RECT 1PHASE 800V 2A GBL
товар відсутній
GBL207 D2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
товар відсутній
GBL201 D2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBL201HD2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBL203 D2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBL203HD2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
GBL204HD2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
GBL205HD2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
GBL206HD2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
GBL207HD2G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
KBL601G T0 |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0 |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL604G T0 |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Description: BRIDGE RECT 1PHASE 400V 6A KBL
товар відсутній
KBL605G T0 |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0 |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
KBL601G T0G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL603G T0G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 6A KBL
Description: BRIDGE RECT 1PHASE 200V 6A KBL
товар відсутній
KBL604G T0G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBL605G T0G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0G |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
RS1DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)RS1DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 6998 шт:
термін постачання 21-31 дні (днів)SFS1602G MNG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFS1602GHMNG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFT12G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
SFT13G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A TS-1
Description: DIODE GEN PURP 150V 1A TS-1
товар відсутній
SFT14G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT16G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Description: DIODE GEN PURP 400V 1A TS-1
товар відсутній
SFT17G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 1A TS-1
Description: DIODE GEN PURP 500V 1A TS-1
товар відсутній
TSS70L RWG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 70V 70MA 1005
Description: DIODE SCHOTTKY 70V 70MA 1005
товар відсутній