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HS2FA M2G HS2FA M2G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 1.5A DO214AC
товар відсутній
HER204G A0G HER204G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER202G R0G HER202G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G R0G HER203G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G R0G HER204G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
товар відсутній
HER207G A0G HER207G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HER207G R0G HER207G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
товар відсутній
HER202G A0G HER202G A0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER202G B0G HER202G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G B0G HER203G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G B0G HER204G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER207G B0G HER207G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS2MFS M3G HS2MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS2MFS M3G HS2MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 9396 шт:
термін постачання 21-31 дні (днів)
BZT55C10 L1G BZT55C10 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
BZT55C10 L0G BZT55C10 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
товар відсутній
TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
товар відсутній
BAS21C RFG BAS21C RFG Taiwan Semiconductor Corporation BAS21%20SERIES_D14.pdf Description: DIODE ARRAY GP 250V 200MA SOT23
товар відсутній
BZT55C2V7 L1G BZT55C2V7 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
BZT55C2V7 L0G BZT55C2V7 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
SR315 R0G SR315 R0G Taiwan Semiconductor Corporation SR302%20SERIES_I13.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HR0G SR315HR0G Taiwan Semiconductor Corporation SR302%20SERIES_I13.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HA0G SR315HA0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR315 B0G SR315 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SR315HB0G SR315HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ90AHR3G SMAJ90AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
SMAJ90AHR3G SMAJ90AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
GBL204 D2G GBL204 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
товар відсутній
GBL206 D2G GBL206 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBL
товар відсутній
GBL207 D2G GBL207 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A GBL
товар відсутній
GBL201 D2G GBL201 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBL201HD2G GBL201HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBL203 D2G GBL203 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBL203HD2G GBL203HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
GBL204HD2G GBL204HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
GBL205HD2G GBL205HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
GBL206HD2G GBL206HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
GBL207HD2G GBL207HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
KBL601G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0 KBL602G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL604G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
товар відсутній
KBL605G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
KBL601G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0G KBL602G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL603G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBL
товар відсутній
KBL604G T0G KBL604G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBL605G T0G KBL605G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
RS1DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 6998 шт:
термін постачання 21-31 дні (днів)
SFS1602G MNG SFS1602G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFS1602GHMNG SFS1602GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFT12G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
SFT13G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 150V 1A TS-1
товар відсутній
SFT14G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT16G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 400V 1A TS-1
товар відсутній
SFT17G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 500V 1A TS-1
товар відсутній
TSS70L RWG Taiwan Semiconductor Corporation TSS70L_B14.pdf Description: DIODE SCHOTTKY 70V 70MA 1005
товар відсутній
HS2FA M2G HS2AA%20SERIES_H14.pdf
HS2FA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1.5A DO214AC
товар відсутній
HER204G A0G
HER204G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER202G R0G HER201G%20SERIES_G2105.pdf
HER202G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G R0G HER201G%20SERIES_G2105.pdf
HER203G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G R0G HER201G%20SERIES_G2105.pdf
HER204G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
товар відсутній
HER207G A0G
HER207G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HER207G R0G HER201G%20SERIES_G2105.pdf
HER207G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
товар відсутній
HER202G A0G HER201G%20SERIES_G2105.pdf
HER202G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER202G B0G HER201G%20SERIES_G2105.pdf
HER202G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G B0G HER201G%20SERIES_G2105.pdf
HER203G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G B0G HER201G%20SERIES_G2105.pdf
HER204G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER207G B0G HER201G%20SERIES_G2105.pdf
HER207G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS2MFS M3G
HS2MFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS2MFS M3G
HS2MFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 9396 шт:
термін постачання 21-31 дні (днів)
BZT55C10 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C10 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
BZT55C10 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C10 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
товар відсутній
TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
товар відсутній
BAS21C RFG BAS21%20SERIES_D14.pdf
BAS21C RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 250V 200MA SOT23
товар відсутній
BZT55C2V7 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C2V7 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
BZT55C2V7 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C2V7 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
SR315 R0G SR302%20SERIES_I13.pdf
SR315 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HR0G SR302%20SERIES_I13.pdf
SR315HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HA0G
SR315HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR315 B0G SR302%20SERIES_J2105.pdf
SR315 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SR315HB0G SR302%20SERIES_J2105.pdf
SR315HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ90AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ90AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
SMAJ90AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ90AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
GBL204 D2G GBL201%20SERIES_J2103.pdf
GBL204 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
товар відсутній
GBL206 D2G GBL201%20SERIES_J2103.pdf
GBL206 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
товар відсутній
GBL207 D2G GBL201%20SERIES_J2103.pdf
GBL207 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
товар відсутній
GBL201 D2G GBL201%20SERIES_J2103.pdf
GBL201 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBL201HD2G GBL201%20SERIES_J2103.pdf
GBL201HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBL203 D2G GBL201%20SERIES_J2103.pdf
GBL203 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBL203HD2G GBL201%20SERIES_J2103.pdf
GBL203HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
GBL204HD2G GBL201%20SERIES_J2103.pdf
GBL204HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
GBL205HD2G GBL201%20SERIES_J2103.pdf
GBL205HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
GBL206HD2G GBL201%20SERIES_J2103.pdf
GBL206HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
GBL207HD2G GBL201%20SERIES_J2103.pdf
GBL207HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
KBL601G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0 KBL601G%20SERIES_G2103.pdf
KBL602G T0
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL604G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
товар відсутній
KBL605G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
KBL601G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0G KBL60xG_F1807_DS.pdf
KBL602G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL603G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 6A KBL
товар відсутній
KBL604G T0G KBL60xG_F1807_DS.pdf
KBL604G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBL605G T0G KBL60xG_F1807_DS.pdf
KBL605G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
RS1DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 6998 шт:
термін постачання 21-31 дні (днів)
SFS1602G MNG SFS1601G%20SERIES_N15.pdf
SFS1602G MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFS1602GHMNG SFS1601G%20SERIES_N15.pdf
SFS1602GHMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFT12G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
SFT13G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A TS-1
товар відсутній
SFT14G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT16G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
товар відсутній
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