Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25591) > Сторінка 185 з 427
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| MUR460S R6 | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 4A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BZV55B43 L0G | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 43V 500MW MINI MELF |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||
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1SMA4745 R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 16V 1.25W DO214AC Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V Power - Max: 1.25 W Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 16 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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US1GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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SMAJ26CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 26VWM 42.1VC DO214AC Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 42.1V Voltage - Breakdown (Min): 28.9V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 26V Current - Peak Pulse (10/1000µs): 9.5A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||
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MUR460SH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 4A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||
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MUR460S | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 4A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MUR160S | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||
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MUR160SH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MBR4050PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 50V TO247AD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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ES2JAH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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ES2JH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SK310AH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 3A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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SS24 M4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||
| ES3B R6 | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||
| ES3B R6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||
| ES3B M6 | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||
| ES3B R7 | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||
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ES3BH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S4B V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 4A DO214AB |
на замовлення 1403 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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HS5G V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 5A DO214AB |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||
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HS5G V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 5A DO214AB |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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S8KC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 8A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 48pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S8KC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 8A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 48pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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RS3B V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SMCJ17CA V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17VWM 27.6VC DO214AB Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 27.6V Voltage - Breakdown (Min): 18.9V Bidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 17V Current - Peak Pulse (10/1000µs): 57A Applications: Telecom Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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S5D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 5A DO214AB |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||
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S5D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 5A DO214AB |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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SS34L RHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34LHRHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Qualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34L M2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34L MHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34LHM2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34LHMHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34L MQG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34L MTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34L RTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34LHMQG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34LHMTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34LHRTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34L RFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||
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SS34LHRFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
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SS34LHRVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
SFF2004G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 20A ITO220AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||
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SFF2006G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 20A ITO220AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||
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SFF2008G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 20A ITO220AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||
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SFF2006GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 20A ITO220AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||
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BYG20G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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P6SMB75AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103V DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 6.1A Voltage - Reverse Standoff (Typ): 64.1V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||
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SMBJ16CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 16VWM 26VC DO214AA Grade: Automotive Qualification: AEC-Q101 Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 26V Voltage - Breakdown (Min): 17.8V Bidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 16V Current - Peak Pulse (10/1000µs): 24.2A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||
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SMBJ10CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AA Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 11.1V Bidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 10V Current - Peak Pulse (10/1000µs): 37A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||
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S4K V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 4A DO214AB |
на замовлення 1565 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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HS3G V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO214AB |
на замовлення 1127 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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TS20P05G D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 20A TS-6P |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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SK59C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 5A 90V DO-214AB |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||
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SK59C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 5A 90V DO-214AB |
на замовлення 1607 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
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S5K V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 5A DO214AB |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||
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S5K V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 5A DO214AB |
на замовлення 1690 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
 |
TSM600N25ECH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 250V 8A TO251 Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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1SMA5936 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1.5W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 26 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. |
| MUR460S R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BZV55B43 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
Description: DIODE ZENER 43V 500MW MINI MELF
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1SMA4745 R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 16V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| US1GH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 5.67 грн |
| SMAJ26CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 26V
Current - Peak Pulse (10/1000µs): 9.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Description: TVS DIODE 26VWM 42.1VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 26V
Current - Peak Pulse (10/1000µs): 9.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| MUR460SH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MUR460S |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.02 грн |
| MUR160S |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MUR160SH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.18 грн |
| MBR4050PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
товару немає в наявності
В кошику
од. на суму грн.
| ES2JAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 8.24 грн |
| ES2JH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.82 грн |
| SK310AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 7.77 грн |
| SS24 M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Description: DIODE SCHOTTKY 40V 2A DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| ES3B R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ES3B R6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ES3B M6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ES3B R7 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ES3BH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| S4B V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 4A DO214AB
Description: DIODE GEN PURP 100V 4A DO214AB
на замовлення 1403 шт:
термін постачання 21-31 дні (днів)
| HS5G V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
| HS5G V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
| S8KC V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 8A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 800V 8A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| S8KC V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 8A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 800V 8A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RS3B V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ17CA V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO214AB
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 57A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TVS DIODE 17VWM 27.6VC DO214AB
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 57A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| S5D V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO214AB
Description: DIODE GEN PURP 200V 5A DO214AB
товару немає в наявності
Мінімальне замовлення: 850 шт
В кошику
од. на суму грн.
| S5D V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO214AB
Description: DIODE GEN PURP 200V 5A DO214AB
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| SS34L RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHRHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS34L M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS34L MHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHMHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SS34L MQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS34L MTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
товару немає в наявності
В кошику
од. на суму грн.
| SS34L RTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHMQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHMTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHRTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SS34L RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHRFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS34LHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SFF2004G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A ITO220AB
Description: DIODE GEN PURP 200V 20A ITO220AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SFF2006G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AB
Description: DIODE GEN PURP 400V 20A ITO220AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SFF2008G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 20A ITO220AB
Description: DIODE GEN PURP 600V 20A ITO220AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SFF2006GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AB
Description: DIODE GEN PURP 400V 20A ITO220AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYG20G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 6.83 грн |
| P6SMB75AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 64.1VWM 103V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SMBJ16CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AA
Grade: Automotive
Qualification: AEC-Q101
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 17.8V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 24.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 16VWM 26VC DO214AA
Grade: Automotive
Qualification: AEC-Q101
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 17.8V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 24.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SMBJ10CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 37A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 10VWM 17VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 37A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| S4K V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 4A DO214AB
Description: DIODE GEN PURP 800V 4A DO214AB
на замовлення 1565 шт:
термін постачання 21-31 дні (днів)
| HS3G V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Description: DIODE GEN PURP 400V 3A DO214AB
на замовлення 1127 шт:
термін постачання 21-31 дні (днів)
| TS20P05G D2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 20A TS-6P
Description: BRIDGE RECT 1P 600V 20A TS-6P
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| SK59C V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 90V DO-214AB
Description: DIODE SCHOTTKY 5A 90V DO-214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
| SK59C V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 90V DO-214AB
Description: DIODE SCHOTTKY 5A 90V DO-214AB
на замовлення 1607 шт:
термін постачання 21-31 дні (днів)
| S5K V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AB
Description: DIODE GEN PURP 800V 5A DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
| S5K V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AB
Description: DIODE GEN PURP 800V 5A DO214AB
на замовлення 1690 шт:
термін постачання 21-31 дні (днів)
| TSM600N25ECH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 250V 8A TO251
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CHANNEL 250V 8A TO251
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.98 грн |
| 1SMA5936 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
Description: DIODE ZENER 30V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.