Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25152) > Сторінка 185 з 420
| Фото | Назва | Виробник | Інформація |
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PGSMAJ45CA M2G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 45VWM 72.7VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ45CAHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ45CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1.5SMC43CA M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1.5SMC43CA V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1.5SMC43CA R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSC873CW RPG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 400V 1A SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSC873CW RPG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 400V 1A SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V |
на замовлення 306 шт: термін постачання 21-31 дні (днів) |
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GBU1507 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 15A GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 212 шт: термін постачання 21-31 дні (днів) |
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TSM4NB60CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 4A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ITO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 843 шт: термін постачання 21-31 дні (днів) |
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TSM4NB60CH X0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO251 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSM4NB60CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CA R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CA R1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CAHR1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 7A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 7A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE43CAHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 7A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4SMA12CA M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4SMA12CAHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4SMA12CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7V DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4SMA12CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7V DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 25A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Discontinued at Digi-Key Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S1AL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S1AL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMF18A RQG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18VWM 29.2VC SOD123W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMF18AHRQG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18VWM 29.2VC SOD123W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSM2312CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 4.9A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V |
на замовлення 152875 шт: термін постачання 21-31 дні (днів) |
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ES5D-T M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 185pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| KBP205G C2 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 2A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| KBP205G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 2A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SR309 R0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR309HR0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR309 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR309HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR3090PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 90V TO247AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR3090PTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 90V TO247AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR309 B0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR309HB0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZT52B24 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24V 500MW SOD123F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52B24 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24V 500MW SOD123F Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V |
на замовлення 4429 шт: термін постачання 21-31 дні (днів) |
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1SMA4754 M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 1.25W DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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HS2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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HS2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 1628 шт: термін постачання 21-31 дні (днів) |
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1PGSMB5951HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 120V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1PGSMB5951HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 120V 3W DO214AA |
на замовлення 1415 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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1PGSMB5951 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 120V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1PGSMB5951 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 120V 3W DO214AA |
на замовлення 1590 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SK320B R5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 3A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK320B R5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 3A DO214AA |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
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TSM1NB60CW RPG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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TSM1NB60CW RPG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V |
на замовлення 9516 шт: термін постачання 21-31 дні (днів) |
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TS78M05CP ROG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 500MA TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: 0°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-252 (DPAK) Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Part Status: Obsolete PSRR: 78dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSC4505CX RFG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 400V 0.3A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 20MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 225 mW |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TSC4505CX RFG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 400V 0.3A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 20MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 225 mW |
на замовлення 12571 шт: термін постачання 21-31 дні (днів) |
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SMAJ60HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 60VWM 107VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 3.7A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 107V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMAJ60HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 60VWM 107VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 3.7A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 107V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMAJ60CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 60VWM 107VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 3.7A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 107V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMAJ60CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 60VWM 107VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 3.7A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 107V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| PGSMAJ45CA M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AC
Description: TVS DIODE 45VWM 72.7VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ45CAHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AC
Description: TVS DIODE 45VWM 72.7VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ45CAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AC
Description: TVS DIODE 45VWM 72.7VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC43CA M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC43CA V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC43CA R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TSC873CW RPG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Description: TRANS NPN 400V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
товару немає в наявності
В кошику
од. на суму грн.
| TSC873CW RPG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Description: TRANS NPN 400V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
на замовлення 306 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 52.48 грн |
| 100+ | 34.39 грн |
| GBU1507 |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.99 грн |
| 20+ | 71.10 грн |
| 100+ | 60.62 грн |
| TSM4NB60CI C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 600V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 843 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.72 грн |
| 10+ | 182.29 грн |
| 100+ | 146.53 грн |
| 500+ | 112.98 грн |
| TSM4NB60CH X0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO251
Description: MOSFET N-CHANNEL 600V 4A TO251
товару немає в наявності
В кошику
од. на суму грн.
| TSM4NB60CZ C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO220
Description: MOSFET N-CHANNEL 600V 4A TO220
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CA R1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CAHR1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CAHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CA B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| P4KE43CAHB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA12CA M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
товару немає в наявності
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| P4SMA12CAHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
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| P4SMA12CA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 10.2VWM 16.7V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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| P4SMA12CAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Description: TVS DIODE 10.2VWM 16.7V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
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| S1AL RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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| S1AL RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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| SMF18A RQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC SOD123W
Description: TVS DIODE 18VWM 29.2VC SOD123W
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| SMF18AHRQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC SOD123W
Description: TVS DIODE 18VWM 29.2VC SOD123W
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| TSM2312CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
на замовлення 152875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.18 грн |
| 10+ | 40.08 грн |
| 100+ | 27.51 грн |
| 500+ | 20.44 грн |
| 1000+ | 18.67 грн |
| ES5D-T M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 185pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 185pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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| KBP205G C2 |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| KBP205G C2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| SR309 R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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| SR309HR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
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| SR309 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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| SR309HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Description: DIODE SCHOTTKY 90V 3A DO201AD
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| SR3090PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 90V TO247AD
Description: DIODE ARRAY SCHOTTKY 90V TO247AD
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| SR3090PTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 90V TO247AD
Description: DIODE ARRAY SCHOTTKY 90V TO247AD
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| SR309 B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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| SR309HB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Description: DIODE SCHOTTKY 90V 3A DO201AD
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| BZT52B24 RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.01 грн |
| BZT52B24 RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
на замовлення 4429 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.54 грн |
| 38+ | 8.90 грн |
| 100+ | 5.50 грн |
| 500+ | 3.76 грн |
| 1000+ | 3.31 грн |
| 1SMA4754 M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 1.25W DO214AC
Description: DIODE ZENER 39V 1.25W DO214AC
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| HS2AA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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| HS2AA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 1628 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.50 грн |
| 10+ | 39.25 грн |
| 100+ | 27.29 грн |
| 500+ | 19.99 грн |
| 1PGSMB5951HR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 120V 3W DO214AA
Description: DIODE ZENER 120V 3W DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| 1PGSMB5951HR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 120V 3W DO214AA
Description: DIODE ZENER 120V 3W DO214AA
на замовлення 1415 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1PGSMB5951 R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 120V 3W DO214AA
Description: DIODE ZENER 120V 3W DO214AA
товару немає в наявності
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од. на суму грн.
| 1PGSMB5951 R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 120V 3W DO214AA
Description: DIODE ZENER 120V 3W DO214AA
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SK320B R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO214AA
Description: DIODE SCHOTTKY 200V 3A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| SK320B R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO214AA
Description: DIODE SCHOTTKY 200V 3A DO214AA
на замовлення 103 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.54 грн |
| 10+ | 45.16 грн |
| 100+ | 34.65 грн |
| TSM1NB60CW RPG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.52 грн |
| 5000+ | 20.40 грн |
| TSM1NB60CW RPG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
на замовлення 9516 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.63 грн |
| 10+ | 50.31 грн |
| 100+ | 37.80 грн |
| 500+ | 28.33 грн |
| 1000+ | 25.71 грн |
| TS78M05CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 78dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
Description: IC REG LINEAR 5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 78dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
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| TSC4505CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 0.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 225 mW
Description: TRANS NPN 400V 0.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 225 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.11 грн |
| TSC4505CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 0.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 225 mW
Description: TRANS NPN 400V 0.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 225 mW
на замовлення 12571 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.00 грн |
| 10+ | 57.55 грн |
| 100+ | 38.00 грн |
| 500+ | 27.79 грн |
| 1000+ | 25.25 грн |
| SMAJ60HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SMAJ60HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SMAJ60CHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ60CHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 60VWM 107VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.