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1PGSMA4756 R3G 1PGSMA4756 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 47V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
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1PGSMA4756 R3G 1PGSMA4756 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 47V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
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1PGSMA4745HR3G 1PGSMA4745HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
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1PGSMA4745HR3G 1PGSMA4745HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
9+36.11 грн
11+29.18 грн
Мінімальне замовлення: 9
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SFF1005GA C0G SFF1005GA C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SFF1005GAHC0G SFF1005GAHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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SFF1005GHC0G SFF1005GHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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TS25P06G C2G TS25P06G C2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_Q2203.pdf Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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TS25P06GHC2G TS25P06GHC2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_Q2203.pdf Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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TS25P06G-K C2G TS25P06G-K C2G Taiwan Semiconductor Corporation TS25P05G-K_TS25P07G-K_A1807.pdf Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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RABS15M RGG RABS15M RGG Taiwan Semiconductor Corporation RABS15M_C15.pdf Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
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ABS15J RGG ABS15J RGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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ABS15M RGG ABS15M RGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
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ABS15JHRGG ABS15JHRGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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ABS15LJ RGG ABS15LJ RGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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RABS15M REG RABS15M REG Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
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RABS15M REG RABS15M REG Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
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SK520C V7G SK520C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
товару немає в наявності
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SK520C V7G SK520C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
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SK520C R7G SK520C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
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SK520C R7G SK520C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
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SK520C V6G SK520C V6G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 5A 200V DO-214AB
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SK52C R7G SK52C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 20V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SK52B M4G SK52B M4G Taiwan Semiconductor Corporation SK52B%20SERIES_P2102.pdf Description: DIODE SCHOTTKY 20V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SMB10J20CAHR5G SMB10J20CAHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5100 шт:
термін постачання 21-31 дні (днів)
850+48.83 грн
1700+43.77 грн
2550+42.79 грн
Мінімальне замовлення: 850
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SMB10J20CAHR5G SMB10J20CAHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6374 шт:
термін постачання 21-31 дні (днів)
4+81.64 грн
10+60.55 грн
100+42.84 грн
Мінімальне замовлення: 4
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BZW06-171B R0G BZW06-171B R0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171 A0G BZW06-171 A0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171B A0G BZW06-171B A0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171 B0G BZW06-171 B0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171B B0G BZW06-171B B0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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SMF8.0A RQG SMF8.0A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 8VWM 13.6VC SOD123W
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SMF8.5A RQG SMF8.5A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 8.5VWM 14.4VC SOD123W
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SMF85A RQG SMF85A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 85VWM 137VC SOD123W
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SMF8.0AHRQG SMF8.0AHRQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 8VWM 13.6VC SOD123W
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SMF8.5AHRQG SMF8.5AHRQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 8.5VWM 14.4VC SOD123W
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SMF85AHRQG SMF85AHRQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 85VWM 137VC SOD123W
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SMAJ170CAHR3G SMAJ170CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ170CAHR3G SMAJ170CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SS26LHRVG SS26LHRVG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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ESH1DM RSG ESH1DM RSG Taiwan Semiconductor Corporation ESH1DM_E2110.pdf Description: DIODE STANDARD 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
3000+10.11 грн
6000+8.92 грн
9000+8.70 грн
Мінімальне замовлення: 3000
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ESH1DM RSG ESH1DM RSG Taiwan Semiconductor Corporation ESH1DM_E2110.pdf Description: DIODE STANDARD 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 174847 шт:
термін постачання 21-31 дні (днів)
7+51.02 грн
10+30.39 грн
100+19.54 грн
500+13.96 грн
1000+12.55 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BZX584B6V2 RSG BZX584B6V2 RSG Taiwan Semiconductor Corporation pdf.php?pn=BZX584B6V2 Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
8000+5.21 грн
16000+4.34 грн
24000+4.25 грн
56000+3.31 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
BZX584B6V2 RSG BZX584B6V2 RSG Taiwan Semiconductor Corporation pdf.php?pn=BZX584B6V2 Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 98055 шт:
термін постачання 21-31 дні (днів)
11+29.83 грн
15+20.41 грн
100+10.30 грн
500+7.88 грн
1000+5.85 грн
2000+4.92 грн
Мінімальне замовлення: 11
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SF14G R1G SF14G R1G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF14GHR1G SF14GHR1G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF14G A0G SF14G A0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF14GHA0G SF14GHA0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF14G B0G SF14G B0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF14GHB0G SF14GHB0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MTZJ4V7SA R0G MTZJ4V7SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.56V 500MW DO34
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MTZJ4V7SB R0G MTZJ4V7SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.68V 500MW DO34
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MTZJ4V7SC R0G MTZJ4V7SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.81V 500MW DO34
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RS3K V6G RS3K V6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 800V 3A DO214AB
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RS3K R7G RS3K R7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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RS3K M6G RS3K M6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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RS3KHM6G RS3KHM6G Taiwan Semiconductor Corporation RS3A%20Thru%20RS3M.pdf Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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RS3KHR7G RS3KHR7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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RS3K V7G RS3K V7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BZT55C20 L0G BZT55C20 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 20V 500MW MINI MELF
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1PGSMA4756 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4756 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
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1PGSMA4756 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4756 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
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1PGSMA4745HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
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1PGSMA4745HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.11 грн
11+29.18 грн
Мінімальне замовлення: 9
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SFF1005GA C0G SFF1001G%20SERIES_M2105.pdf
SFF1005GA C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SFF1005GAHC0G SFF1001G%20SERIES_M2105.pdf
SFF1005GAHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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SFF1005GHC0G SFF1001G%20SERIES_M2105.pdf
SFF1005GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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TS25P06G C2G TS25P01G%20SERIES_Q2203.pdf
TS25P06G C2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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TS25P06GHC2G TS25P01G%20SERIES_Q2203.pdf
TS25P06GHC2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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TS25P06G-K C2G TS25P05G-K_TS25P07G-K_A1807.pdf
TS25P06G-K C2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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RABS15M RGG RABS15M_C15.pdf
RABS15M RGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
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ABS15J RGG ABS15J%20SERIES_D15.pdf
ABS15J RGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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ABS15M RGG ABS15J%20SERIES_D15.pdf
ABS15M RGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
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ABS15JHRGG ABS15J%20SERIES_D15.pdf
ABS15JHRGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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ABS15LJ RGG ABS15J%20SERIES_D15.pdf
ABS15LJ RGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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RABS15M REG
RABS15M REG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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RABS15M REG
RABS15M REG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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SK520C V7G SK52C%20SERIES_S2311.pdf
SK520C V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
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SK520C V7G SK52C%20SERIES_S2311.pdf
SK520C V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
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SK520C R7G SK52C%20SERIES_S2311.pdf
SK520C R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
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SK520C R7G SK52C%20SERIES_S2311.pdf
SK520C R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
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SK520C V6G SK52C%20SERIES_Q2102.pdf
SK520C V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 200V DO-214AB
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SK52C R7G SK52C%20SERIES_Q2102.pdf
SK52C R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SK52B M4G SK52B%20SERIES_P2102.pdf
SK52B M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SMB10J20CAHR5G SMB10J%20SERIES_B2102.pdf
SMB10J20CAHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+48.83 грн
1700+43.77 грн
2550+42.79 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
SMB10J20CAHR5G SMB10J%20SERIES_B2102.pdf
SMB10J20CAHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+81.64 грн
10+60.55 грн
100+42.84 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BZW06-171B R0G BZW06%20SERIES_K2105.pdf
BZW06-171B R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171 A0G BZW06%20SERIES_K2105.pdf
BZW06-171 A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171B A0G BZW06%20SERIES_K2105.pdf
BZW06-171B A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171 B0G BZW06%20SERIES_K2105.pdf
BZW06-171 B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171B B0G BZW06%20SERIES_K2105.pdf
BZW06-171B B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
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SMF8.0A RQG SMF5.0A%20SERIES_B1709.pdf
SMF8.0A RQG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
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SMF8.5A RQG SMF5.0A%20SERIES_B1709.pdf
SMF8.5A RQG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC SOD123W
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SMF85A RQG SMF5.0A%20SERIES_B1709.pdf
SMF85A RQG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC SOD123W
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SMF8.0AHRQG SMF5.0A%20SERIES_B1709.pdf
SMF8.0AHRQG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
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SMF8.5AHRQG SMF5.0A%20SERIES_B1709.pdf
SMF8.5AHRQG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC SOD123W
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SMF85AHRQG SMF5.0A%20SERIES_B1709.pdf
SMF85AHRQG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC SOD123W
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SMAJ170CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ170CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ170CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ170CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SS26LHRVG SS22L-SS215L_O2103.pdf
SS26LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
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ESH1DM RSG ESH1DM_E2110.pdf
ESH1DM RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.11 грн
6000+8.92 грн
9000+8.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESH1DM RSG ESH1DM_E2110.pdf
ESH1DM RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 174847 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.02 грн
10+30.39 грн
100+19.54 грн
500+13.96 грн
1000+12.55 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BZX584B6V2 RSG pdf.php?pn=BZX584B6V2
BZX584B6V2 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+5.21 грн
16000+4.34 грн
24000+4.25 грн
56000+3.31 грн
Мінімальне замовлення: 8000
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BZX584B6V2 RSG pdf.php?pn=BZX584B6V2
BZX584B6V2 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 98055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.83 грн
15+20.41 грн
100+10.30 грн
500+7.88 грн
1000+5.85 грн
2000+4.92 грн
Мінімальне замовлення: 11
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SF14G R1G SF11G%20SERIES_H2104.pdf
SF14G R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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SF14GHR1G SF11G%20SERIES_H2104.pdf
SF14GHR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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SF14G A0G SF11G%20SERIES_H2104.pdf
SF14G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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SF14GHA0G SF11G%20SERIES_H2104.pdf
SF14GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF14G B0G SF11G%20SERIES_H2104.pdf
SF14G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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SF14GHB0G SF11G%20SERIES_H2104.pdf
SF14GHB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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MTZJ4V7SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V7SA R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.56V 500MW DO34
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MTZJ4V7SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V7SB R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.68V 500MW DO34
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MTZJ4V7SC R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V7SC R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.81V 500MW DO34
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RS3K V6G RS3A%20SERIES_J1708.pdf
RS3K V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
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RS3K R7G RS3A%20SERIES_L2102.pdf
RS3K R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
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RS3K M6G RS3A%20SERIES_L2102.pdf
RS3K M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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RS3KHM6G RS3A%20Thru%20RS3M.pdf
RS3KHM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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RS3KHR7G RS3A%20SERIES_L2102.pdf
RS3KHR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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RS3K V7G RS3A%20SERIES_L2102.pdf
RS3K V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BZT55C20 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C20 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW MINI MELF
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