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MBRS1635HMNG MBRS1635HMNG Taiwan Semiconductor Corporation MBRS1635%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
товару немає в наявності
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TQM300NB06DCR RLG TQM300NB06DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+39.32 грн
5000+36.06 грн
Мінімальне замовлення: 2500
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TQM300NB06DCR RLG TQM300NB06DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
4+95.23 грн
10+74.87 грн
100+58.25 грн
500+46.34 грн
1000+37.75 грн
Мінімальне замовлення: 4
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GBL205 GBL205 Taiwan Semiconductor Corporation GBL201 SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SFAS806G MNG SFAS806G MNG Taiwan Semiconductor Corporation SFAS801G%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 8A TO263AB
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SFAS806GHMNG SFAS806GHMNG Taiwan Semiconductor Corporation SFAS801G%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 8A TO263AB
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BZX79B6V2 A0G BZX79B6V2 A0G Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_E2103.pdf Description: DIODE ZENER 6.2V 500MW DO35
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RS1GAL RS1GAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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RS1GAL RS1GAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
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MBRS1635 MNG MBRS1635 MNG Taiwan Semiconductor Corporation MBRS1635%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
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1PGSMB5933 R5G 1PGSMB5933 R5G Taiwan Semiconductor Corporation 1PGSMB5926%20-%201PGSMB5956.pdf Description: DIODE ZENER 22V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
товару немає в наявності
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ES1JAL ES1JAL Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+6.09 грн
Мінімальне замовлення: 14000
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ES1JAL ES1JAL Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 27825 шт:
термін постачання 21-31 дні (днів)
10+33.95 грн
16+20.09 грн
100+12.75 грн
500+8.96 грн
1000+7.99 грн
2000+7.17 грн
5000+6.18 грн
Мінімальне замовлення: 10
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ES1JFS ES1JFS Taiwan Semiconductor Corporation ES1BFS SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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ES1JFS ES1JFS Taiwan Semiconductor Corporation ES1BFS SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)
10+33.95 грн
16+20.09 грн
100+12.75 грн
500+8.96 грн
1000+7.99 грн
2000+7.17 грн
5000+6.18 грн
Мінімальне замовлення: 10
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ES1CL RFG ES1CL RFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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SMBJ78A R5G SMBJ78A R5G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 78VWM 126VC DO214AA
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SMBJ78A M4G SMBJ78A M4G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 78VWM 126VC DO214AA
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SMBJ78AH SMBJ78AH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ78AHR5G SMBJ78AHR5G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 78VWM 126VC DO214AA
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SMBJ78AHM4G SMBJ78AHM4G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N5392GH 1N5392GH Taiwan Semiconductor Corporation Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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1N5392G 1N5392G Taiwan Semiconductor Corporation 1N5391G SERIES_G2309.pdf Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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ES2JAL ES2JAL Taiwan Semiconductor Corporation ES2BAL SERIES_D2103.pdf Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
14000+7.36 грн
28000+6.44 грн
Мінімальне замовлення: 14000
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ES2JAL ES2JAL Taiwan Semiconductor Corporation ES2BAL SERIES_D2103.pdf Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 40250 шт:
термін постачання 21-31 дні (днів)
11+31.47 грн
14+23.44 грн
100+15.71 грн
500+11.12 грн
1000+9.02 грн
2000+8.70 грн
5000+7.77 грн
Мінімальне замовлення: 11
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ES2JFS ES2JFS Taiwan Semiconductor Corporation ES2BFS SERIES_D2103.pdf Description: DIODE STANDARD 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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ES2JFS ES2JFS Taiwan Semiconductor Corporation ES2BFS SERIES_D2103.pdf Description: DIODE STANDARD 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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GP1006 C0G GP1006 C0G Taiwan Semiconductor Corporation GP1001%20SERIES_G2104.pdf Description: DIODE ARRAY GP 800V 10A TO220AB
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GP1006HC0G GP1006HC0G Taiwan Semiconductor Corporation GP1001%20SERIES_G2104.pdf Description: DIODE ARRAY GP 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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RS1MAL RS1MAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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RS1MAL RS1MAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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SS315 R7 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY DO214AB
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SS315 M6 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY DO214AB
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SS315 R6G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY DO214AB
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SS315 R6 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY DO214AB
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SS315H SS315H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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GBU2507 GBU2507 Taiwan Semiconductor Corporation GBU2504 SERIES_E2205.pdf Description: DIODE BRIDGE 25A 1000V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 738 шт:
термін постачання 21-31 дні (днів)
4+110.13 грн
20+86.60 грн
100+67.36 грн
500+53.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU2506 GBU2506 Taiwan Semiconductor Corporation GBU2504 SERIES_E2205.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 2528 шт:
термін постачання 21-31 дні (днів)
3+150.71 грн
10+77.03 грн
100+50.47 грн
500+40.53 грн
1000+40.11 грн
2000+39.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMCJ110A V6G SMCJ110A V6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ110A V7G SMCJ110A V7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ110A M6G SMCJ110A M6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
HS1DFS HS1DFS Taiwan Semiconductor Corporation pdf.php?pn=HS1DFS Description: DIODE GEN PURP 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
HS1DFS HS1DFS Taiwan Semiconductor Corporation pdf.php?pn=HS1DFS Description: DIODE GEN PURP 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6508 шт:
термін постачання 21-31 дні (днів)
10+33.95 грн
14+22.88 грн
100+11.54 грн
500+9.60 грн
1000+7.47 грн
2000+6.68 грн
5000+6.43 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES1DFS ES1DFS Taiwan Semiconductor Corporation ES1BFS SERIES_C2103.pdf Description: DIODE STANDARD 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)
3500+7.31 грн
7000+6.40 грн
10500+6.08 грн
17500+5.36 грн
24500+5.16 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
ES1DFS ES1DFS Taiwan Semiconductor Corporation ES1BFS SERIES_C2103.pdf Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 27600 шт:
термін постачання 21-31 дні (днів)
10+33.95 грн
16+20.09 грн
100+12.75 грн
500+8.96 грн
1000+7.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
HS2DFS HS2DFS Taiwan Semiconductor Corporation pdf.php?pn=HS2DFS Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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В кошику  од. на суму  грн.
HS2DFS HS2DFS Taiwan Semiconductor Corporation pdf.php?pn=HS2DFS Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
12+29.81 грн
15+22.25 грн
100+13.33 грн
500+11.59 грн
1000+7.88 грн
2000+7.25 грн
5000+6.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
RS2DFS RS2DFS Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
RS2DFS RS2DFS Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)
10+35.61 грн
13+25.68 грн
100+14.54 грн
500+9.04 грн
1000+6.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
HS2GFS HS2GFS Taiwan Semiconductor Corporation pdf.php?pn=HS2GFS Description: DIODE GEN PURP 400V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
HS2GFS HS2GFS Taiwan Semiconductor Corporation pdf.php?pn=HS2GFS Description: DIODE GEN PURP 400V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 6030 шт:
термін постачання 21-31 дні (днів)
12+29.81 грн
15+22.25 грн
100+13.33 грн
500+11.59 грн
1000+7.88 грн
2000+7.25 грн
5000+6.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
HS1GFS HS1GFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
HS1GFS HS1GFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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В кошику  од. на суму  грн.
HS1MFS HS1MFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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В кошику  од. на суму  грн.
HS1MFS HS1MFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 807 шт:
термін постачання 21-31 дні (днів)
14+24.84 грн
22+14.67 грн
100+9.19 грн
500+6.39 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TLD8S33AH TLD8S33AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_D2103.pdf Description: TVS DIODE 33VWM 53.3VC DO218AB
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TLD8S33AH TLD8S33AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_D2103.pdf Description: TVS DIODE 33VWM 53.3VC DO218AB
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
RS1JAL RS1JAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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RS1JAL RS1JAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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RS1JL MHG RS1JL MHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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MBRS1635HMNG MBRS1635%20SERIES_K2103.pdf
MBRS1635HMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
товару немає в наявності
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TQM300NB06DCR RLG
TQM300NB06DCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.32 грн
5000+36.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TQM300NB06DCR RLG
TQM300NB06DCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.23 грн
10+74.87 грн
100+58.25 грн
500+46.34 грн
1000+37.75 грн
Мінімальне замовлення: 4
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GBL205 GBL201 SERIES_J2103.pdf
GBL205
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SFAS806G MNG SFAS801G%20SERIES_N2103.pdf
SFAS806G MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
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SFAS806GHMNG SFAS801G%20SERIES_N2103.pdf
SFAS806GHMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
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BZX79B6V2 A0G BZX79B2V4%20SERIES_E2103.pdf
BZX79B6V2 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW DO35
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RS1GAL RS1DAL SERIES_C2304.pdf
RS1GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
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RS1GAL RS1DAL SERIES_C2304.pdf
RS1GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
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MBRS1635 MNG MBRS1635%20SERIES_K2103.pdf
MBRS1635 MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A TO263AB
товару немає в наявності
В кошику  од. на суму  грн.
1PGSMB5933 R5G 1PGSMB5926%20-%201PGSMB5956.pdf
1PGSMB5933 R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
товару немає в наявності
В кошику  од. на суму  грн.
ES1JAL ES1BAL SERIES_C2103.pdf
ES1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+6.09 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
ES1JAL ES1BAL SERIES_C2103.pdf
ES1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 27825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.95 грн
16+20.09 грн
100+12.75 грн
500+8.96 грн
1000+7.99 грн
2000+7.17 грн
5000+6.18 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES1JFS ES1BFS SERIES_C2103.pdf
ES1JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
товару немає в наявності
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ES1JFS ES1BFS SERIES_C2103.pdf
ES1JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.95 грн
16+20.09 грн
100+12.75 грн
500+8.96 грн
1000+7.99 грн
2000+7.17 грн
5000+6.18 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES1CL RFG ES1AL%20SERIES_L2103.pdf
ES1CL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
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SMBJ78A R5G SMBJ%20SERIES_R2104.pdf
SMBJ78A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
товару немає в наявності
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SMBJ78A M4G SMBJ%20SERIES_R2104.pdf
SMBJ78A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
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SMBJ78AH SMBJH SERIES_A2102.pdf
SMBJ78AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ78AHR5G SMBJ%20SERIES_R2104.pdf
SMBJ78AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
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SMBJ78AHM4G SMBJ%20SERIES_R2104.pdf
SMBJ78AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5392GH
1N5392GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5392G 1N5391G SERIES_G2309.pdf
1N5392G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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ES2JAL ES2BAL SERIES_D2103.pdf
ES2JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+7.36 грн
28000+6.44 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
ES2JAL ES2BAL SERIES_D2103.pdf
ES2JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 40250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.47 грн
14+23.44 грн
100+15.71 грн
500+11.12 грн
1000+9.02 грн
2000+8.70 грн
5000+7.77 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ES2JFS ES2BFS SERIES_D2103.pdf
ES2JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
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ES2JFS ES2BFS SERIES_D2103.pdf
ES2JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
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GP1006 C0G GP1001%20SERIES_G2104.pdf
GP1006 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
товару немає в наявності
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GP1006HC0G GP1001%20SERIES_G2104.pdf
GP1006HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RS1MAL RS1DAL SERIES_C2304.pdf
RS1MAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
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RS1MAL RS1DAL SERIES_C2304.pdf
RS1MAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
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SS315 R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
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SS315 M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
товару немає в наявності
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SS315 R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
товару немає в наявності
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SS315 R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
товару немає в наявності
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SS315H
SS315H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
GBU2507 GBU2504 SERIES_E2205.pdf
GBU2507
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 25A 1000V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 738 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+110.13 грн
20+86.60 грн
100+67.36 грн
500+53.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU2506 GBU2504 SERIES_E2205.pdf
GBU2506
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 2528 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.71 грн
10+77.03 грн
100+50.47 грн
500+40.53 грн
1000+40.11 грн
2000+39.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMCJ110A V6G SMCJ SERIES_R2004.pdf
SMCJ110A V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
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SMCJ110A V7G SMCJ SERIES_R2004.pdf
SMCJ110A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
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SMCJ110A M6G SMCJ SERIES_R2004.pdf
SMCJ110A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
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HS1DFS pdf.php?pn=HS1DFS
HS1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
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HS1DFS pdf.php?pn=HS1DFS
HS1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6508 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.95 грн
14+22.88 грн
100+11.54 грн
500+9.60 грн
1000+7.47 грн
2000+6.68 грн
5000+6.43 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES1DFS ES1BFS SERIES_C2103.pdf
ES1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+7.31 грн
7000+6.40 грн
10500+6.08 грн
17500+5.36 грн
24500+5.16 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
ES1DFS ES1BFS SERIES_C2103.pdf
ES1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 27600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.95 грн
16+20.09 грн
100+12.75 грн
500+8.96 грн
1000+7.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
HS2DFS pdf.php?pn=HS2DFS
HS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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HS2DFS pdf.php?pn=HS2DFS
HS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.81 грн
15+22.25 грн
100+13.33 грн
500+11.59 грн
1000+7.88 грн
2000+7.25 грн
5000+6.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
RS2DFS
RS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
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RS2DFS
RS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.61 грн
13+25.68 грн
100+14.54 грн
500+9.04 грн
1000+6.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
HS2GFS pdf.php?pn=HS2GFS
HS2GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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HS2GFS pdf.php?pn=HS2GFS
HS2GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 6030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.81 грн
15+22.25 грн
100+13.33 грн
500+11.59 грн
1000+7.88 грн
2000+7.25 грн
5000+6.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
HS1GFS HS1DFS SERIES_C2103.pdf
HS1GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
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HS1GFS HS1DFS SERIES_C2103.pdf
HS1GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
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HS1MFS HS1DFS SERIES_C2103.pdf
HS1MFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
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HS1MFS HS1DFS SERIES_C2103.pdf
HS1MFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 807 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+24.84 грн
22+14.67 грн
100+9.19 грн
500+6.39 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TLD8S33AH TLD8S10AH SERIES_D2103.pdf
TLD8S33AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
товару немає в наявності
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TLD8S33AH TLD8S10AH SERIES_D2103.pdf
TLD8S33AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
RS1JAL RS1DAL SERIES_C2304.pdf
RS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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RS1JAL RS1DAL SERIES_C2304.pdf
RS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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RS1JL MHG RS1AL%20SERIES_N2103.pdf
RS1JL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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