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BZT55B3V3 L1G BZT55B3V3 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
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BZT55B3V3 L0G BZT55B3V3 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
товару немає в наявності
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SF46G SF46G Taiwan Semiconductor Corporation SF41G SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1250+17.47 грн
2500+15.04 грн
Мінімальне замовлення: 1250
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SF46GH SF46GH Taiwan Semiconductor Corporation SF41G SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1250+17.47 грн
2500+15.04 грн
Мінімальне замовлення: 1250
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MBR25150CTHC0G MBR25150CTHC0G Taiwan Semiconductor Corporation MBR2535CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOT 150V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF15150CT MBRF15150CT Taiwan Semiconductor Corporation MBRF1535CT SERIES_J2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBRF15150CTHC0G MBRF15150CTHC0G Taiwan Semiconductor Corporation MBRF1535CT%20SERIES_J2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF25150CT MBRF25150CT Taiwan Semiconductor Corporation MBRF2535CT SERIES_L2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBRF5150HC0G MBRF5150HC0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF5150H MBRF5150H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 5A ITO220AC
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MBRF25150CTHC0G MBRF25150CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF5150 C0G MBRF5150 C0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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BZX585B3V3 RKG BZX585B3V3 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3.3V 200MW SOD523F
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SMCJ58CAHM6G SMCJ58CAHM6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
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SMCJ58CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SRF20150 SRF20150 Taiwan Semiconductor Corporation SRF2020%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
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TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
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TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)
2+185.25 грн
10+160.10 грн
100+128.71 грн
500+99.25 грн
1000+82.23 грн
Мінімальне замовлення: 2
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TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation TSM250NB06CV_A2007.pdf Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+16.16 грн
Мінімальне замовлення: 5000
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TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation TSM250NB06CV_A2007.pdf Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
4+78.50 грн
10+47.09 грн
100+30.83 грн
500+22.37 грн
1000+20.26 грн
2000+18.48 грн
Мінімальне замовлення: 4
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TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation TSM250NB06LCV_A2008.pdf Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+16.16 грн
Мінімальне замовлення: 5000
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TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation TSM250NB06LCV_A2008.pdf Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
4+78.50 грн
10+47.09 грн
100+30.83 грн
500+22.37 грн
1000+20.26 грн
2000+18.48 грн
Мінімальне замовлення: 4
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BZT55B9V1 L1G BZT55B9V1 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 9.1V 500MW MINI MELF
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BZY55B9V1 RYG BZY55B9V1 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 9.1V 500MW 0805
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BZT55B9V1 L0G BZT55B9V1 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 9.1V 500MW MINI MELF
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BZS55B9V1 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 9.1V 500MW 1206
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BZS55B9V1 RAG Taiwan Semiconductor Corporation Description: DIODE ZENER 500MW 1206
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TSM10NB60CI C0G TSM10NB60CI C0G Taiwan Semiconductor Corporation TSM10NB60.pdf Description: MOSFET N-CH 600V 10A ITO220AB
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TS19501CB10H RBG TS19501CB10H RBG Taiwan Semiconductor Corporation TS19501CB10H_A1911.pdf Description: IC LED DRIVER CTRLR PWM 10MSOP
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TS19501CB10H RBG TS19501CB10H RBG Taiwan Semiconductor Corporation TS19501CB10H_A1911.pdf Description: IC LED DRIVER CTRLR PWM 10MSOP
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P6SMB180CAH P6SMB180CAH Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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SS23LHRUG SS23LHRUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 30V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ20AHF3G PGSMAJ20AHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
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TSP10U60S TSP10U60S Taiwan Semiconductor Corporation TSP10U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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TSP10U60S TSP10U60S Taiwan Semiconductor Corporation TSP10U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
4+80.07 грн
10+47.85 грн
Мінімальне замовлення: 4
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P4KE43AH P4KE43AH Taiwan Semiconductor Corporation Description: TVS DIODE 36.8VWM 59.3V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SR105 SR105 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HA0G SR105HA0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105 B0G SR105 B0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HB0G SR105HB0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HR1G SR105HR1G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105 R1G SR105 R1G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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P6KE11CAH P6KE11CAH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX585B47 RKG BZX585B47 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 47V 200MW SOD523F
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MBRF25100CT MBRF25100CT Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRF2560CT MBRF2560CT Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
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MBRF25100CTH MBRF25100CTH Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRF2590CT C0G MBRF2590CT C0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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MBRF2550CT C0G MBRF2550CT C0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 50V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
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MBRF2550CTHC0G MBRF2550CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 50V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
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MBRF2590CTHC0G MBRF2590CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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MBRF2560CTHC0G MBRF2560CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
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MBRF2545CTHC0G MBRF2545CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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BZW04-136B B0G BZW04-136B B0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 136VWM 219VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-136B A0G BZW04-136B A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 136VWM 219VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 400W
Power Line Protection: No
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SS13LHRVG SS13LHRVG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 30V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
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SS13LHRVG SS13LHRVG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 30V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
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SS13M SS13M Taiwan Semiconductor Corporation SS13M%20SERIES_O2103.pdf Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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SS13M SS13M Taiwan Semiconductor Corporation SS13M%20SERIES_O2103.pdf Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 11919 шт:
термін постачання 21-31 дні (днів)
9+37.68 грн
12+26.91 грн
100+15.24 грн
500+9.47 грн
1000+7.26 грн
2000+6.31 грн
5000+5.59 грн
Мінімальне замовлення: 9
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SS115L SS115L Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+7.05 грн
Мінімальне замовлення: 10000
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BZT55B3V3 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
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BZT55B3V3 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
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SF46G SF41G SERIES_G2105.pdf
SF46G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1250+17.47 грн
2500+15.04 грн
Мінімальне замовлення: 1250
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SF46GH SF41G SERIES_G2105.pdf
SF46GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1250+17.47 грн
2500+15.04 грн
Мінімальне замовлення: 1250
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MBR25150CTHC0G MBR2535CT%20SERIES_K2104.pdf
MBR25150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF15150CT MBRF1535CT SERIES_J2105.pdf
MBRF15150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBRF15150CTHC0G MBRF1535CT%20SERIES_J2105.pdf
MBRF15150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF25150CT MBRF2535CT SERIES_L2105.pdf
MBRF25150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBRF5150HC0G MBRF5100%20SERIES_H2105.pdf
MBRF5150HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF5150H
MBRF5150H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
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MBRF25150CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF25150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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MBRF5150 C0G MBRF5100%20SERIES_H2105.pdf
MBRF5150 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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BZX585B3V3 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V3 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
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SMCJ58CAHM6G SMCJ%20SERIES_S2104.pdf
SMCJ58CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
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SMCJ58CA R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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SRF20150 SRF2020%20SERIES_J2105.pdf
SRF20150
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
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TQM250NB06CR RLG
TQM250NB06CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
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TQM250NB06CR RLG
TQM250NB06CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.25 грн
10+160.10 грн
100+128.71 грн
500+99.25 грн
1000+82.23 грн
Мінімальне замовлення: 2
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TSM250NB06CV RGG TSM250NB06CV_A2007.pdf
TSM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+16.16 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TSM250NB06CV RGG TSM250NB06CV_A2007.pdf
TSM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.50 грн
10+47.09 грн
100+30.83 грн
500+22.37 грн
1000+20.26 грн
2000+18.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TSM250NB06LCV RGG TSM250NB06LCV_A2008.pdf
TSM250NB06LCV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+16.16 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TSM250NB06LCV RGG TSM250NB06LCV_A2008.pdf
TSM250NB06LCV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.50 грн
10+47.09 грн
100+30.83 грн
500+22.37 грн
1000+20.26 грн
2000+18.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BZT55B9V1 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B9V1 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
товару немає в наявності
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BZY55B9V1 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B9V1 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
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В кошику  од. на суму  грн.
BZT55B9V1 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B9V1 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
товару немає в наявності
В кошику  од. на суму  грн.
BZS55B9V1 RXG BZS55B2V4%20SERIES_C1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 1206
товару немає в наявності
В кошику  од. на суму  грн.
BZS55B9V1 RAG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 500MW 1206
товару немає в наявності
В кошику  од. на суму  грн.
TSM10NB60CI C0G TSM10NB60.pdf
TSM10NB60CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 10A ITO220AB
товару немає в наявності
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TS19501CB10H RBG TS19501CB10H_A1911.pdf
TS19501CB10H RBG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
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TS19501CB10H RBG TS19501CB10H_A1911.pdf
TS19501CB10H RBG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB180CAH P6SMB%20SERIES_Q2209.pdf
P6SMB180CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
SS23LHRUG SS22L-SS215L_O2103.pdf
SS23LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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PGSMAJ20AHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20AHF3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
TSP10U60S TSP10U60S_F2103.pdf
TSP10U60S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
товару немає в наявності
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TSP10U60S TSP10U60S_F2103.pdf
TSP10U60S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+80.07 грн
10+47.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
P4KE43AH
P4KE43AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SR105
SR105
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
SR105HA0G SR102%20SERIES_G2104.pdf
SR105HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
SR105 B0G SR102%20SERIES_G2104.pdf
SR105 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
SR105HB0G SR102%20SERIES_G2104.pdf
SR105HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
SR105HR1G SR102%20SERIES_G2104.pdf
SR105HR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
SR105 R1G SR102%20SERIES_G2104.pdf
SR105 R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику  од. на суму  грн.
P6KE11CAH P6KE SERIES_P2203.pdf
P6KE11CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX585B47 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B47 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 200MW SOD523F
товару немає в наявності
В кошику  од. на суму  грн.
MBRF25100CT MBRF2535CT%20SERIES_L2105.pdf
MBRF25100CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBRF2560CT MBRF2535CT%20SERIES_L2105.pdf
MBRF2560CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
товару немає в наявності
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MBRF25100CTH MBRF2535CT%20SERIES_L2105.pdf
MBRF25100CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBRF2590CT C0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2590CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
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MBRF2550CT C0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2550CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 50V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
товару немає в наявності
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MBRF2550CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2550CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 50V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
товару немає в наявності
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MBRF2590CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2590CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
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MBRF2560CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2560CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
товару немає в наявності
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MBRF2545CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2545CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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BZW04-136B B0G BZW04%20SERIES_J2104.pdf
BZW04-136B B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-136B A0G BZW04%20SERIES_J2104.pdf
BZW04-136B A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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SS13LHRVG SS12L%20SERIES_Q2103.pdf
SS13LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
товару немає в наявності
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SS13LHRVG SS12L%20SERIES_Q2103.pdf
SS13LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
товару немає в наявності
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SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 11919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.68 грн
12+26.91 грн
100+15.24 грн
500+9.47 грн
1000+7.26 грн
2000+6.31 грн
5000+5.59 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SS115L SS12L SERIES_Q2103.pdf
SS115L
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+7.05 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
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