Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25352) > Сторінка 257 з 423
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1.5SMC200CA R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 3000W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ40CA R3G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 40VWM 64.5VC DO214ACQualification: AEC-Q101 Grade: Automotive Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 64.5V Voltage - Breakdown (Min): 44.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 40V Current - Peak Pulse (10/1000µs): 6.2A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ES3A M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ES3AHM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| ES3A M6 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES3A R6 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES3A R7 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES3AH | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES3A R6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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S5G R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S5G R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| S5G R6 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S5G R6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S5G R7 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| HS5G R7 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| HS5G R6 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| HS5G R6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SK39A | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SK39AH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AC Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MMBT3906T RSG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 40V 0.2A SOT-523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBT3906T RSG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 40V 0.2A SOT-523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBR40150PTH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 150V 40A TO247AD Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AD (TO-3P) Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX79C56 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 56V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX55B27 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1PGSMB5942 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 3W DO214AA Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V Power - Max: 3 W Supplier Device Package: DO-214AA (SMB) Impedance (Max) (Zzt): 70 Ohms Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 745 шт: термін постачання 21-31 дні (днів) |
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1PGSMB5942HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 3W DO214AA Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V Power - Max: 3 W Supplier Device Package: DO-214AA (SMB) Impedance (Max) (Zzt): 70 Ohms Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 452 шт: термін постачання 21-31 дні (днів) |
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1PGSMB5942 | Taiwan Semiconductor Corporation | Description: DIODE ZENER 51V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1PGSMB5942H | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 3W DO214AA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V Power - Max: 3 W Grade: Automotive Supplier Device Package: DO-214AA (SMB) Impedance (Max) (Zzt): 70 Ohms Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ58CAHF2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 93.6V Voltage - Breakdown (Min): 64.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 58V Current - Peak Pulse (10/1000µs): 4.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ58CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 93.6V Voltage - Breakdown (Min): 64.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 58V Current - Peak Pulse (10/1000µs): 4.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ58CAHF4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 93.6V Voltage - Breakdown (Min): 64.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 58V Current - Peak Pulse (10/1000µs): 4.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ58CAHF3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ58CAHR2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PGSMAJ58CA F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC Part Status: Obsolete Packaging: Bulk Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 93.6V Voltage - Breakdown (Min): 64.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 58V Current - Peak Pulse (10/1000µs): 4.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1PGSMC5359 V7G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 5W DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLD6S24AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 24VWM 38.9VC DO218AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLD6S24AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 24VWM 38.9VC DO218AB |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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RS1KFSH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1A SOD128 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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MURF8L60 | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 8A ITO220AC Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 65 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
на замовлення 464 шт: термін постачання 21-31 дні (днів) |
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MURF8L60HC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A ITO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SK515C M6 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SK515C R6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB Current - Reverse Leakage @ Vr: 300 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BZT55B3V3 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZT55B3V3 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SF46G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO201AD Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SF46GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO201AD Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MBR25150CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 150V 25A TO220AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRF15150CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRF15150CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRF25150CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 25A Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRF5150HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A ITO220AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRF5150H | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 5A ITO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRF25150CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRF5150 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A ITO220AC Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX585B3V3 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 200MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMCJ58CAHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SMCJ58CA R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
SRF20150 | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 150V ITO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
TQM250NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 7A/32A 8PDFNU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
TQM250NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 7A/32A 8PDFNU |
на замовлення 2436 шт: термін постачання 21-31 дні (днів) |
|
| 1.5SMC200CA R6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 3000W DO214AB SMC
Description: TVS DIODE 3000W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ40CA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 40VWM 64.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ES3A M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| ES3AHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| ES3A M6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| ES3A R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| ES3A R7 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| ES3AH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| ES3A R6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S5G R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S5G R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S5G R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S5G R6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| S5G R7 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| HS5G R7 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| HS5G R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| HS5G R6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SK39A |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SK39AH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906T RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906T RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
товару немає в наявності
В кошику
од. на суму грн.
| MBR40150PTH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 40A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOT 150V 40A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| BZX79C56 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Description: DIODE ZENER 56V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B27 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW DO35
Description: DIODE ZENER 27V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| 1PGSMB5942 R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 40.53 грн |
| 100+ | 26.38 грн |
| 1PGSMB5942HR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 35.12 грн |
| 100+ | 24.07 грн |
| 1PGSMB5942 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Description: DIODE ZENER 51V 3W DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| 1PGSMB5942H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 51V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CAHF2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CAHF4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CAHF3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Description: TVS DIODE 58VWM 93.6VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CAHR2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Description: TVS DIODE 58VWM 93.6VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CA F4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
товару немає в наявності
В кошику
од. на суму грн.
| 1PGSMC5359 V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5W DO214AB
Description: DIODE ZENER 5W DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TLD6S24AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Description: TVS DIODE 24VWM 38.9VC DO218AB
товару немає в наявності
В кошику
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| TLD6S24AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Description: TVS DIODE 24VWM 38.9VC DO218AB
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 481.82 грн |
| 10+ | 416.28 грн |
| 100+ | 341.08 грн |
| RS1KFSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 800V 1A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14000+ | 3.75 грн |
| 28000+ | 3.30 грн |
| MURF8L60 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE STANDARD 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 464 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.31 грн |
| 10+ | 58.74 грн |
| 100+ | 38.73 грн |
| MURF8L60HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Description: DIODE GEN PURP 600V 8A ITO220AC
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| SK515C M6 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Description: DIODE SCHOTTKY 150V 5A DO214AB
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| SK515C R6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 150V 5A DO214AB
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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| BZT55B3V3 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Description: DIODE ZENER 3.3V 500MW MINI MELF
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| BZT55B3V3 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Description: DIODE ZENER 3.3V 500MW MINI MELF
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| SF46G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1250+ | 17.61 грн |
| 2500+ | 15.16 грн |
| SF46GH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 4A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1250+ | 17.61 грн |
| 2500+ | 15.16 грн |
| MBR25150CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 25A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 150V 25A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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од. на суму грн.
| MBRF15150CT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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од. на суму грн.
| MBRF15150CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE ARR SCHOTT 150V ITO220AB
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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| MBRF25150CT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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| MBRF5150HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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| MBRF5150H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Description: DIODE SCHOTTKY 150V 5A ITO220AC
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В кошику
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| MBRF25150CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARR SCHOTT 150V ITO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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В кошику
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| MBRF5150 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
товару немає в наявності
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од. на суму грн.
| BZX585B3V3 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
Description: DIODE ZENER 3.3V 200MW SOD523F
товару немає в наявності
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| SMCJ58CAHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Description: TVS DIODE 58VWM 93.6VC DO214AB
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| SMCJ58CA R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
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| SRF20150 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Description: DIODE ARRAY SCHOTT 150V ITO220AB
товару немає в наявності
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| TQM250NB06CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
товару немає в наявності
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од. на суму грн.
| TQM250NB06CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.71 грн |
| 10+ | 161.36 грн |
| 100+ | 129.73 грн |
| 500+ | 100.03 грн |
| 1000+ | 82.88 грн |