Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25354) > Сторінка 260 з 423
| Фото | Назва | Виробник | Інформація |
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MMSZ5237B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 500MW SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ100CA M6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ100CA R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMCJ100CAH | Taiwan Semiconductor Corporation | Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ100CA R6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX585B5V1 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 200MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MBR1650H | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 16A TO220AC Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 16A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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S2KA | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HS2KA | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO214ACCurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ100CA R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SR1204 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 12A DO201ADCurrent - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 12A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SR1204H | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 12A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR1204 B0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 12A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR1204HB0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 12A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR1204HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 12A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZW04-171H | Taiwan Semiconductor Corporation |
Description: TVS DIODE 171VWM 274VC DO204AL Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 274V Voltage - Breakdown (Min): 190V Unidirectional Channels: 1 Supplier Device Package: DO-204AL (DO-41) Voltage - Reverse Standoff (Typ): 171V Current - Peak Pulse (10/1000µs): 1.5A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SFF2006G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 20A ITO220AB Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 90pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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SFF2006GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 20A ITO220AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 90pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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ES2BFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A SOD128Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ES2BFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A SOD128Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ES2BAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A THIN SMAVoltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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ES2BAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A THIN SMACurrent - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) |
на замовлення 13686 шт: термін постачання 21-31 дні (днів) |
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ES2BAH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 2A DO214ACQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ES2BH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 2A DO214AAQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5SMC68AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5SMC68A R7 | Taiwan Semiconductor Corporation |
Description: TVS DIODE 1500W DO214AB SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5SMC68A R6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 1500W DO214AB SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5SMC68A R6 | Taiwan Semiconductor Corporation |
Description: TVS DIODE 1500W DO214AB SMCPower Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 92V Voltage - Breakdown (Min): 64.6V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 58.1V Current - Peak Pulse (10/1000µs): 17A Applications: Telecom Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5KE110CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 94VWM 152VC DO201 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 152V Voltage - Breakdown (Min): 105V Bidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 94V Current - Peak Pulse (10/1000µs): 10.3A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5KE110AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 94VWM 152VC DO201 Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 152V Voltage - Breakdown (Min): 105V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 94V Current - Peak Pulse (10/1000µs): 10.3A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM60NC196CI C0G | Taiwan Semiconductor Corporation |
Description: 600V, 20A, SINGLE N-CHANNEL POWEPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ITO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V |
на замовлення 3766 шт: термін постачання 21-31 дні (днів) |
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TSM60NC165CI C0G | Taiwan Semiconductor Corporation |
Description: 600V, 24A, SINGLE N-CHANNEL POWEPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ITO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V |
на замовлення 3989 шт: термін постачання 21-31 дні (днів) |
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FR151GH | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 1.5A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMAJ36AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36VWM 58.1VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 6.9A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3922 шт: термін постачання 21-31 дні (днів) |
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TSM300NB06LDCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta), 40W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM300NB06LDCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta), 40W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TBS610 | Taiwan Semiconductor Corporation |
Description: 6A 1000V STANDARD BRIDGE RECTIFIPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TBS Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 1000 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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TBS610 | Taiwan Semiconductor Corporation |
Description: 6A 1000V STANDARD BRIDGE RECTIFIPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TBS Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 1000 V |
на замовлення 1829 шт: термін постачання 21-31 дні (днів) |
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SR303 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 3A DO201AD Current - Reverse Leakage @ Vr: 500 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR303H | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 3A DO201AD Current - Reverse Leakage @ Vr: 500 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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LL5817 L0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A MELFCurrent - Reverse Leakage @ Vr: 500 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: MELF Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 110pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LL5817-J0 L0 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 20V 1A MELF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| LL5817 L0 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A MELF Current - Reverse Leakage @ Vr: 500 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: MELF Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 110pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZY55C36 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 36V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55B10 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C33 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C4V3 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C18 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C9V1 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 500MW 0805Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: 0805 Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C10 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55B13 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55B18 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C7V5 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55B4V7 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.7V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55B15 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55B24 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C20 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C15 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 500MW 0805Current - Reverse Leakage @ Vr: 100 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: 0805 Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55C22 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 500MW 0805Current - Reverse Leakage @ Vr: 100 nA @ 16 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: 0805 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZY55B4V3 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 500MW 0805 |
товару немає в наявності |
В кошику од. на суму грн. |
| MMSZ5237B RHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW SOD123F
Description: DIODE ZENER 8.2V 500MW SOD123F
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ100CA M6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ100CA R6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ100CAH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ100CA R6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| BZX585B5V1 RKG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 200MW SOD523F
Description: DIODE ZENER 5.1V 200MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| MBR1650H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 16A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 16A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| S2KA |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Description: DIODE GEN PURP 800V 1.5A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| HS2KA |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 800V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ100CA R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| SR1204 |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 12A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1250+ | 29.26 грн |
| 2500+ | 24.17 грн |
| SR1204H |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Description: DIODE SCHOTTKY 40V 12A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| SR1204 B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Description: DIODE SCHOTTKY 40V 12A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| SR1204HB0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Description: DIODE SCHOTTKY 40V 12A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| SR1204HA0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Description: DIODE SCHOTTKY 40V 12A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| BZW04-171H |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 274VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 1.5A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 171VWM 274VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 1.5A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SFF2006G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE GEN PURP 400V 20A ITO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.57 грн |
| 50+ | 72.00 грн |
| 100+ | 57.06 грн |
| 500+ | 45.39 грн |
| SFF2006GH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE GEN PURP 400V 20A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.57 грн |
| 50+ | 72.00 грн |
| 100+ | 57.06 грн |
| 500+ | 45.39 грн |
| 1000+ | 36.97 грн |
| ES2BFS |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 100V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ES2BFS |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A SOD128
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Description: DIODE STANDARD 100V 2A SOD128
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
товару немає в наявності
В кошику
од. на суму грн.
| ES2BAL |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A THIN SMA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE STANDARD 100V 2A THIN SMA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 8.53 грн |
| 7000+ | 7.49 грн |
| ES2BAL |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 100V 2A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
на замовлення 13686 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 13+ | 23.54 грн |
| 100+ | 15.01 грн |
| 500+ | 10.62 грн |
| 1000+ | 9.51 грн |
| ES2BAH |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 2A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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| ES2BH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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| 1.5SMC68AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5SMC68A R7 |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1.5SMC68A R6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1.5SMC68A R6 |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 58.1V
Current - Peak Pulse (10/1000µs): 17A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 1500W DO214AB SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 58.1V
Current - Peak Pulse (10/1000µs): 17A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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| 1.5KE110CAH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO201
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 94VWM 152VC DO201
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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| 1.5KE110AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO201
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 94VWM 152VC DO201
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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| TSM60NC196CI C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
на замовлення 3766 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 263.46 грн |
| 10+ | 167.23 грн |
| 100+ | 118.42 грн |
| 500+ | 98.84 грн |
| TSM60NC165CI C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
на замовлення 3989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.16 грн |
| 10+ | 162.20 грн |
| 100+ | 131.18 грн |
| 500+ | 120.41 грн |
| FR151GH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Description: DIODE GEN PURP 50V 1.5A DO204AC
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| SMAJ36AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3922 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.27 грн |
| 18+ | 17.37 грн |
| 100+ | 10.95 грн |
| 500+ | 7.65 грн |
| 1000+ | 6.80 грн |
| 2000+ | 6.09 грн |
| TSM300NB06LDCR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.48 грн |
| 5000+ | 28.87 грн |
| TSM300NB06LDCR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.95 грн |
| 10+ | 59.96 грн |
| 100+ | 46.64 грн |
| 500+ | 37.10 грн |
| 1000+ | 30.22 грн |
| TBS610 |
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Виробник: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 49.17 грн |
| TBS610 |
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Виробник: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
на замовлення 1829 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.55 грн |
| 10+ | 88.15 грн |
| 100+ | 68.58 грн |
| 500+ | 54.55 грн |
| SR303 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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| SR303H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| LL5817 L0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| LL5817-J0 L0 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Description: DIODE SCHOTTKY 20V 1A MELF
товару немає в наявності
В кошику
од. на суму грн.
| LL5817 L0 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C36 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW 0805
Description: DIODE ZENER 36V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B10 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
Description: DIODE ZENER 10V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C33 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 0805
Description: DIODE ZENER 33V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C4V3 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 0805
Description: DIODE ZENER 4.3V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C18 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
Description: DIODE ZENER 18V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C9V1 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C10 RYG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
Description: DIODE ZENER 10V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B13 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW 0805
Description: DIODE ZENER 13V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B18 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
Description: DIODE ZENER 18V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C7V5 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 0805
Description: DIODE ZENER 7.5V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B4V7 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW 0805
Description: DIODE ZENER 4.7V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B15 RYG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 0805
Description: DIODE ZENER 15V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B24 RYG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 0805
Description: DIODE ZENER 24V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C20 RYG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 0805
Description: DIODE ZENER 20V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C15 RYG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 15V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZY55C22 RYG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 22V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B4V3 RYG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 0805
Description: DIODE ZENER 4.3V 500MW 0805
товару немає в наявності
В кошику
од. на суму грн.
























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