Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25125) > Сторінка 260 з 419
| Фото | Назва | Виробник | Інформація |
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SS115LSH | Taiwan Semiconductor Corporation |
 Description: DIODE SCHOTTKY 150V 1A SOD123HEPackaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS115LSH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 1A SOD123HE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 15653 шт: термін постачання 21-31 дні (днів) |
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P6KE82AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70.1VWM 113V DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 5.5A Voltage - Reverse Standoff (Typ): 70.1V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TS5213CX533 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 3.3V 80MA SOT25 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.42V @ 80mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TS5213CX533 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 3.3V 80MA SOT25 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.42V @ 80mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3 mA |
на замовлення 11955 шт: термін постачання 21-31 дні (днів) |
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TSP12U120S | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 120V 12A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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TSP12U120S | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 120V 12A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
на замовлення 32021 шт: термін постачання 21-31 дні (днів) |
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SMCJ45CA M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ45CA V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ45CAHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ45CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 80.3VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 80.3V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ45CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 80.3VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 80.3V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ45HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 80.3VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 80.3V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ45HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 80.3VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 80.3V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TST20H100CW | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSF20H100C | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTTKY 100V ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS3MB-T | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RS3MB-T | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 8924 шт: термін постачання 21-31 дні (днів) |
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S2AA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S2AHM4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S2AHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ60A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 60VWM 96.8VC DO214AB |
на замовлення 825 шт: термін постачання 21-31 дні (днів) |
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SMCJ45CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 21A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ45CA R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ45CA V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ45CAHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SMCJ45CA R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR2035PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS35 R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS35 R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS35HM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS35HR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS35 M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS35 V6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SS35 M6 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS35 R7 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS35 R6 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS35 R6G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS35H | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 50V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSM60NC390CH C5G | Taiwan Semiconductor Corporation |
Description: 600V, 11A, SINGLE N-CHANNEL POWE Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V |
на замовлення 12981 шт: термін постачання 21-31 дні (днів) |
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TSM60NC1R5CH C5G | Taiwan Semiconductor Corporation |
Description: 600V, 3A, SINGLE N-CHANNEL POWER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V |
на замовлення 14990 шт: термін постачання 21-31 дні (днів) |
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SK83C | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 8A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TS431ACX RFG | Taiwan Semiconductor Corporation |
Description: IC VREF SHUNT 36V 1% SOT23 Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Programmable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C Supplier Device Package: SOT-23 Voltage - Output (Min/Fixed): 2.495V Part Status: Obsolete Current - Cathode: 600 µA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 5063 шт: термін постачання 21-31 дні (днів) |
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SMCJ51AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR7150 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 7.5A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR790 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 7.5A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR7100 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 7.5A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM60NC390CP ROG | Taiwan Semiconductor Corporation |
Description: 600V, 11A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM60NC390CP ROG | Taiwan Semiconductor Corporation |
Description: 600V, 11A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DBL158G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 1.2KV 1.5A DBL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1DALH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1DALH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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.jpg "S1DAL") |
S1DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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S1DLS | Taiwan Semiconductor Corporation | Description: DIODE GP 200V 1.2A SOD123HE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1DLS | Taiwan Semiconductor Corporation | Description: DIODE GP 200V 1.2A SOD123HE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSD30H100CW | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOT 30A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Supplier Device Package: TO-263AB (D²PAK) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSD30H100CW | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOT 30A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Supplier Device Package: TO-263AB (D²PAK) Part Status: Active |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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1.5SMC33AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7V DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC33A R6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 1500W DO214AB SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. |
| SS115LSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SS115LSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 15653 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 18+ | 18.50 грн |
| 100+ | 9.85 грн |
| 500+ | 6.85 грн |
| 1000+ | 5.68 грн |
| 2000+ | 5.42 грн |
| 5000+ | 4.64 грн |
| P6KE82AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 70.1VWM 113V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TS5213CX533 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.42V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
Description: IC REG LINEAR 3.3V 80MA SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.42V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.53 грн |
| TS5213CX533 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.42V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
Description: IC REG LINEAR 3.3V 80MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.42V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
на замовлення 11955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.20 грн |
| 10+ | 39.87 грн |
| 25+ | 37.45 грн |
| 100+ | 28.68 грн |
| 250+ | 26.64 грн |
| 500+ | 22.67 грн |
| 1000+ | 17.84 грн |
| TSP12U120S |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 21.87 грн |
| 12000+ | 19.50 грн |
| TSP12U120S |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
на замовлення 32021 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.45 грн |
| 10+ | 50.71 грн |
| 100+ | 35.11 грн |
| 500+ | 27.53 грн |
| 1000+ | 23.43 грн |
| 2000+ | 20.87 грн |
| SMCJ45CA M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ45CA V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ45CAHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ45CHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ45CHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ45HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ45HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TST20H100CW |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| TSF20H100C |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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В кошику
од. на суму грн.
| RS3MB-T |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.97 грн |
| 6000+ | 5.42 грн |
| RS3MB-T |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 8924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 19+ | 17.54 грн |
| 100+ | 10.77 грн |
| 500+ | 7.76 грн |
| 1000+ | 6.90 грн |
| S2AA M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
Description: DIODE GEN PURP 50V 1.5A DO214AC
товару немає в наявності
В кошику
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| S2AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| S2AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ60A R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
на замовлення 825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.37 грн |
| 10+ | 38.75 грн |
| 100+ | 29.75 грн |
| SMCJ45CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ45CA R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ45CA V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ45CAHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ45CA R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| MBR2035PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
товару немає в наявності
В кошику
од. на суму грн.
| SS35 R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| SS35 R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| SS35HM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SS35HR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SS35 M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Description: DIODE GEN PURP 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SS35 V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| SS35 M6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Description: DIODE SCHOTTKY 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SS35 R7 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Description: DIODE SCHOTTKY 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SS35 R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Description: DIODE SCHOTTKY 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SS35 R6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Description: DIODE SCHOTTKY 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SS35H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Description: DIODE SCHOTTKY 50V 3A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TSM60NC390CH C5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
на замовлення 12981 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.81 грн |
| 75+ | 73.25 грн |
| 150+ | 70.43 грн |
| 525+ | 63.45 грн |
| TSM60NC1R5CH C5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
на замовлення 14990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.62 грн |
| 75+ | 45.79 грн |
| 150+ | 36.29 грн |
| 525+ | 28.86 грн |
| 1050+ | 28.55 грн |
| SK83C |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 8A DO214AB
Description: DIODE SCHOTTKY 30V 8A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TS431ACX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT 36V 1% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 5063 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.22 грн |
| 26+ | 12.44 грн |
| 29+ | 11.07 грн |
| 100+ | 8.90 грн |
| 250+ | 8.20 грн |
| 500+ | 7.77 грн |
| 1000+ | 7.30 грн |
| SMCJ51AHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Description: TVS DIODE 51VWM 82.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MBR7150 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| MBR790 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 7.5A TO220AC
Description: DIODE SCHOTTKY 90V 7.5A TO220AC
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| MBR7100 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 7.5A TO220AC
Description: DIODE SCHOTTKY 100V 7.5A TO220AC
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| TSM60NC390CP ROG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
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| TSM60NC390CP ROG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
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| DBL158G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBL
Description: BRIDGE RECT 1P 1.2KV 1.5A DBL
товару немає в наявності
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| S1DALH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Description: DIODE GEN PURP 200V 1A THIN SMA
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| S1DALH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Description: DIODE GEN PURP 200V 1A THIN SMA
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 15+ | 22.09 грн |
| 100+ | 13.76 грн |
| S1DAL |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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| S1DAL |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.78 грн |
| 13+ | 24.80 грн |
| 100+ | 14.07 грн |
| 500+ | 8.74 грн |
| 1000+ | 6.70 грн |
| 2000+ | 5.83 грн |
| 5000+ | 5.16 грн |
| S1DLS |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 1.2A SOD123HE
Description: DIODE GP 200V 1.2A SOD123HE
товару немає в наявності
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| S1DLS |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 1.2A SOD123HE
Description: DIODE GP 200V 1.2A SOD123HE
товару немає в наявності
В кошику
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| TSD30H100CW |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
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| TSD30H100CW |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.72 грн |
| 10+ | 96.16 грн |
| 1.5SMC33AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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| 1.5SMC33A R6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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