Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25643) > Сторінка 256 з 428
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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PGSMAJ58CAHF4G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 58VWM 93.6VC DO214ACPart Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 93.6V Voltage - Breakdown (Min): 64.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 58V Current - Peak Pulse (10/1000µs): 4.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PGSMAJ58CAHF3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PGSMAJ58CAHR2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PGSMAJ58CA F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AC Part Status: Obsolete Packaging: Bulk Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 93.6V Voltage - Breakdown (Min): 64.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 58V Current - Peak Pulse (10/1000µs): 4.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1PGSMC5359 V7G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 5W DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLD6S24AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 24VWM 38.9VC DO218AB |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||
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TLD6S24AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 24VWM 38.9VC DO218AB |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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RS1KFSH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1A SOD128 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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MURF8L60 | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 8A ITO220AC Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 65 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
на замовлення 464 шт: термін постачання 21-31 дні (днів) |
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MURF8L60HC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A ITO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SK515C M6 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SK515C R6G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO214AB Current - Reverse Leakage @ Vr: 300 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT55B3V3 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT55B3V3 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 500MW MINI MELF |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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SF46G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO201AD Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SF46GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO201AD Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MBR25150CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 150V 25A TO220AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF15150CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF15150CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF25150CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 25A Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF5150HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A ITO220AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF5150H | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 5A ITO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF25150CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 150V ITO220AB Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF5150 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A ITO220AC Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX585B3V3 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 200MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMCJ58CAHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ58CA R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SRF20150 | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 150V ITO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TQM250NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 7A/32A 8PDFNU |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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TQM250NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 7A/32A 8PDFNU |
на замовлення 2436 шт: термін постачання 21-31 дні (днів) |
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TSM250NB06CV RGG | Taiwan Semiconductor Corporation |
Description: 60V, 28A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.9W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM250NB06CV RGG | Taiwan Semiconductor Corporation |
Description: 60V, 28A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.9W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 9954 шт: термін постачання 21-31 дні (днів) |
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TSM250NB06LCV RGG | Taiwan Semiconductor Corporation |
Description: 60V, 27A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TSM250NB06LCV RGG | Taiwan Semiconductor Corporation |
Description: 60V, 27A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZT55B9V1 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
RYG.jpg "BZY55B9V1 RYG") |
BZY55B9V1 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 500MW 0805 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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BZT55B9V1 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 500MW MINI MELF |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
| BZS55B9V1 RXG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 500MW 1206 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZS55B9V1 RAG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 500MW 1206 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM10NB60CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 10A ITO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TS19501CB10H RBG | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER CTRLR PWM 10MSOP |
товару немає в наявності |
Мінімальне замовлення: 45000 шт В кошику од. на суму грн. | ||||||||||||
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TS19501CB10H RBG | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER CTRLR PWM 10MSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P6SMB180CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 154VWM 246VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
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SS23LHRUG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 400 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 7200 шт В кошику од. на суму грн. | ||||||||||||
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PGSMAJ20AHF3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSP10U60S | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A TO277A Current - Reverse Leakage @ Vr: 300 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
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TSP10U60S | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A TO277A Current - Reverse Leakage @ Vr: 300 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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P4KE43AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36.8VWM 59.3V DO204AL Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 59.3V Voltage - Breakdown (Min): 40.9V Unidirectional Channels: 1 Supplier Device Package: DO-204AL (DO-41) Voltage - Reverse Standoff (Typ): 36.8V Current - Peak Pulse (10/1000µs): 7A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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SR105 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 50V 1A DO204AL |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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SR105HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR105 B0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR105HB0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR105HR1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SR105 R1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
P6KE11CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9.4VWM 15.6VC DO204AC Power Line Protection: No Power - Peak Pulse: 600W Qualification: AEC-Q101 Grade: Automotive Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Voltage - Clamping (Max) @ Ipp: 15.6V Voltage - Breakdown (Min): 10.5V Bidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 9.4V Current - Peak Pulse (10/1000µs): 40A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||
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BZX585B47 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 200MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF25100CT | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A Voltage - DC Reverse (Vr) (Max): 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF2560CT | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 60V ITO220AB Current - Reverse Leakage @ Vr: 2 mA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF25100CTH | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF2590CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 90V ITO220AB Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Current - Average Rectified (Io) (per Diode): 25A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB |
товару немає в наявності |
В кошику од. на суму грн. |
| PGSMAJ58CAHF4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CAHF3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Description: TVS DIODE 58VWM 93.6VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CAHR2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Description: TVS DIODE 58VWM 93.6VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ58CA F4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
товару немає в наявності
В кошику
од. на суму грн.
| 1PGSMC5359 V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5W DO214AB
Description: DIODE ZENER 5W DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TLD6S24AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Description: TVS DIODE 24VWM 38.9VC DO218AB
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| TLD6S24AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Description: TVS DIODE 24VWM 38.9VC DO218AB
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 482.89 грн |
| 10+ | 417.21 грн |
| 100+ | 341.85 грн |
| RS1KFSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 800V 1A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14000+ | 3.76 грн |
| 28000+ | 3.31 грн |
| MURF8L60 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE STANDARD 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.53 грн |
| 10+ | 58.87 грн |
| 100+ | 38.82 грн |
| MURF8L60HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Description: DIODE GEN PURP 600V 8A ITO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SK515C M6 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Description: DIODE SCHOTTKY 150V 5A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SK515C R6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 150V 5A DO214AB
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZT55B3V3 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Description: DIODE ZENER 3.3V 500MW MINI MELF
товару немає в наявності
В кошику
од. на суму грн.
| BZT55B3V3 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Description: DIODE ZENER 3.3V 500MW MINI MELF
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SF46G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1250+ | 17.65 грн |
| 2500+ | 15.19 грн |
| SF46GH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 4A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1250+ | 17.65 грн |
| 2500+ | 15.19 грн |
| MBR25150CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 25A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 150V 25A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| MBRF15150CT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| MBRF15150CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE ARR SCHOTT 150V ITO220AB
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
товару немає в наявності
В кошику
од. на суму грн.
| MBRF25150CT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
товару немає в наявності
В кошику
од. на суму грн.
| MBRF5150HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| MBRF5150H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Description: DIODE SCHOTTKY 150V 5A ITO220AC
товару немає в наявності
В кошику
од. на суму грн.
| MBRF25150CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARR SCHOTT 150V ITO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| MBRF5150 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BZX585B3V3 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
Description: DIODE ZENER 3.3V 200MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ58CAHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Description: TVS DIODE 58VWM 93.6VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ58CA R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
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В кошику
од. на суму грн.
| SRF20150 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Description: DIODE ARRAY SCHOTT 150V ITO220AB
товару немає в наявності
В кошику
од. на суму грн.
| TQM250NB06CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TQM250NB06CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.13 грн |
| 10+ | 161.72 грн |
| 100+ | 130.02 грн |
| 500+ | 100.25 грн |
| 1000+ | 83.07 грн |
| TSM250NB06CV RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 17.32 грн |
| TSM250NB06CV RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 9954 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 44.52 грн |
| 100+ | 29.16 грн |
| 500+ | 21.16 грн |
| 1000+ | 19.16 грн |
| 2000+ | 17.48 грн |
| TSM250NB06LCV RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 17.32 грн |
| 10000+ | 15.48 грн |
| TSM250NB06LCV RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 44.52 грн |
| 100+ | 29.16 грн |
| 500+ | 21.16 грн |
| 1000+ | 19.16 грн |
| 2000+ | 17.48 грн |
| BZT55B9V1 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
Description: DIODE ZENER 9.1V 500MW MINI MELF
товару немає в наявності
В кошику
од. на суму грн.
| BZY55B9V1 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
Description: DIODE ZENER 9.1V 500MW 0805
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BZT55B9V1 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
Description: DIODE ZENER 9.1V 500MW MINI MELF
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZS55B9V1 RXG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 1206
Description: DIODE ZENER 9.1V 500MW 1206
товару немає в наявності
В кошику
од. на суму грн.
| BZS55B9V1 RAG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 500MW 1206
Description: DIODE ZENER 500MW 1206
товару немає в наявності
В кошику
од. на суму грн.
| TSM10NB60CI C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 10A ITO220AB
Description: MOSFET N-CH 600V 10A ITO220AB
товару немає в наявності
В кошику
од. на суму грн.
| TS19501CB10H RBG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Description: IC LED DRIVER CTRLR PWM 10MSOP
товару немає в наявності
Мінімальне замовлення: 45000 шт
В кошику
од. на суму грн.
| TS19501CB10H RBG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Description: IC LED DRIVER CTRLR PWM 10MSOP
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB180CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
Description: TVS DIODE 154VWM 246VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SS23LHRUG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 7200 шт
В кошику
од. на суму грн.
| PGSMAJ20AHF3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| TSP10U60S |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| TSP10U60S |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.88 грн |
| 10+ | 48.33 грн |
| P4KE43AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3V DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 59.3V
Voltage - Breakdown (Min): 40.9V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 36.8V
Current - Peak Pulse (10/1000µs): 7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 36.8VWM 59.3V DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 59.3V
Voltage - Breakdown (Min): 40.9V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 36.8V
Current - Peak Pulse (10/1000µs): 7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SR105 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SR105HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| SR105 B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| SR105HB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| SR105HR1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| SR105 R1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
Description: DIODE SCHOTTKY 50V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P6KE11CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 40A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 40A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
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Мінімальне замовлення: 3500 шт
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| BZX585B47 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 200MW SOD523F
Description: DIODE ZENER 47V 200MW SOD523F
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| MBRF25100CT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
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| MBRF2560CT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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| MBRF25100CTH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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| MBRF2590CT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
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