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TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation TSM250NB06CV_A2007.pdf Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+17.28 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation TSM250NB06CV_A2007.pdf Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 9954 шт:
термін постачання 21-31 дні (днів)
5+73.58 грн
10+44.42 грн
100+29.10 грн
500+21.11 грн
1000+19.12 грн
2000+17.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation TSM250NB06LCV_A2008.pdf Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+17.28 грн
10000+15.45 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation TSM250NB06LCV_A2008.pdf Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5+73.58 грн
10+44.42 грн
100+29.10 грн
500+21.11 грн
1000+19.12 грн
2000+17.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BZT55B9V1 L1G BZT55B9V1 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 9.1V 500MW MINI MELF
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BZY55B9V1 RYG BZY55B9V1 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 9.1V 500MW 0805
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BZT55B9V1 L0G BZT55B9V1 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 9.1V 500MW MINI MELF
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BZS55B9V1 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 9.1V 500MW 1206
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BZS55B9V1 RAG Taiwan Semiconductor Corporation Description: DIODE ZENER 500MW 1206
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TSM10NB60CI C0G TSM10NB60CI C0G Taiwan Semiconductor Corporation TSM10NB60.pdf Description: MOSFET N-CH 600V 10A ITO220AB
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TS19501CB10H RBG TS19501CB10H RBG Taiwan Semiconductor Corporation TS19501CB10H_A1911.pdf Description: IC LED DRIVER CTRLR PWM 10MSOP
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TS19501CB10H RBG TS19501CB10H RBG Taiwan Semiconductor Corporation TS19501CB10H_A1911.pdf Description: IC LED DRIVER CTRLR PWM 10MSOP
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P6SMB180CAH P6SMB180CAH Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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SS23LHRUG SS23LHRUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 30V 2A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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PGSMAJ20AHF3G PGSMAJ20AHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
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TSP10U60S TSP10U60S Taiwan Semiconductor Corporation TSP10U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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TSP10U60S TSP10U60S Taiwan Semiconductor Corporation TSP10U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
4+80.70 грн
10+48.23 грн
Мінімальне замовлення: 4
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P4KE43AH P4KE43AH Taiwan Semiconductor Corporation Description: TVS DIODE 36.8VWM 59.3V DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 59.3V
Voltage - Breakdown (Min): 40.9V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 36.8V
Current - Peak Pulse (10/1000µs): 7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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SR105 SR105 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HA0G SR105HA0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105 B0G SR105 B0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HB0G SR105HB0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HR1G SR105HR1G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105 R1G SR105 R1G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
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P6KE11CAH P6KE11CAH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 40A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
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BZX585B47 RKG BZX585B47 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 47V 200MW SOD523F
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MBRF25100CT MBRF25100CT Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
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MBRF2560CT MBRF2560CT Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF25100CTH MBRF25100CTH Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2590CT C0G MBRF2590CT C0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
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MBRF2550CT C0G MBRF2550CT C0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 50V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2550CTHC0G MBRF2550CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 50V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2590CTHC0G MBRF2590CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2560CTHC0G MBRF2560CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
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MBRF2545CTHC0G MBRF2545CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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BZW04-136B B0G BZW04-136B B0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 136VWM 219VC DO204AL
Voltage - Clamping (Max) @ Ipp: 219V
Voltage - Breakdown (Min): 152V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 136V
Current - Peak Pulse (10/1000µs): 1.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
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BZW04-136B A0G BZW04-136B A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 136VWM 219VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 219V
Voltage - Breakdown (Min): 152V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 136V
Current - Peak Pulse (10/1000µs): 1.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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SS13LHRVG SS13LHRVG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 30V 1A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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SS13LHRVG SS13LHRVG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 30V 1A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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SS13M SS13M Taiwan Semiconductor Corporation SS13M%20SERIES_O2103.pdf Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
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SS13M SS13M Taiwan Semiconductor Corporation SS13M%20SERIES_O2103.pdf Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
на замовлення 11919 шт:
термін постачання 21-31 дні (днів)
9+37.98 грн
12+27.12 грн
100+15.36 грн
500+9.54 грн
1000+7.32 грн
2000+6.36 грн
5000+5.63 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SS115L SS115L Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 150V 1A SUB SMA
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+7.10 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SS115L SS115L Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 150V 1A SUB SMA
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 19773 шт:
термін постачання 21-31 дні (днів)
9+37.18 грн
14+22.17 грн
100+14.12 грн
500+9.96 грн
1000+8.89 грн
2000+7.99 грн
5000+6.90 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SS115LSH SS115LSH Taiwan Semiconductor Corporation SS12LSH SERIES_B2212.pdf Description: DIODE SCHOTTKY 150V 1A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOD-123HE
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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SS115LSH SS115LSH Taiwan Semiconductor Corporation SS12LSH SERIES_B2212.pdf Description: DIODE SCHOTTKY 150V 1A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
на замовлення 15653 шт:
термін постачання 21-31 дні (днів)
11+29.27 грн
18+17.68 грн
100+9.41 грн
500+6.55 грн
1000+5.43 грн
2000+5.18 грн
5000+4.43 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
P6KE82AH P6KE82AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 70.1VWM 113V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
TS5213CX533 RFG TS5213CX533 RFG Taiwan Semiconductor Corporation TS5213_H2206.pdf Description: IC REG LINEAR 3.3V 80MA SOT25
Current - Supply (Max): 3 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.42V @ 80mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+14.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TS5213CX533 RFG TS5213CX533 RFG Taiwan Semiconductor Corporation TS5213_H2206.pdf Description: IC REG LINEAR 3.3V 80MA SOT25
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Current - Supply (Max): 3 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.42V @ 80mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
на замовлення 11955 шт:
термін постачання 21-31 дні (днів)
8+45.10 грн
10+38.09 грн
25+35.78 грн
100+27.41 грн
250+25.45 грн
500+21.66 грн
1000+17.05 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TSP12U120S TSP12U120S Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 120V 12A TO277A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
6000+20.90 грн
12000+18.63 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
TSP12U120S TSP12U120S Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 120V 12A TO277A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 32021 шт:
термін постачання 21-31 дні (днів)
6+57.75 грн
10+48.45 грн
100+33.54 грн
500+26.30 грн
1000+22.38 грн
2000+19.94 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMCJ45CA M6G SMCJ45CA M6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CA V7G SMCJ45CA V7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CAHM6G SMCJ45CAHM6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
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SMAJ45CHR3G SMAJ45CHR3G Taiwan Semiconductor Corporation SMAJH%20SERIES_A2102.pdf Description: TVS DIODE 45VWM 80.3VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 80.3V
Voltage - Breakdown (Min): 50V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 45V
Current - Peak Pulse (10/1000µs): 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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SMAJ45CHR3G SMAJ45CHR3G Taiwan Semiconductor Corporation SMAJH%20SERIES_A2102.pdf Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ45HR3G SMAJ45HR3G Taiwan Semiconductor Corporation SMAJH%20SERIES_A2102.pdf Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ45HR3G SMAJ45HR3G Taiwan Semiconductor Corporation SMAJH%20SERIES_A2102.pdf Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
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TST20H100CW TST20H100CW Taiwan Semiconductor Corporation TST20H100CW SERIES_F2104.pdf Description: DIODE SCHOTTKY 100V 10A TO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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TSF20H100C TSF20H100C Taiwan Semiconductor Corporation TSF20H100C SERIES_J2105.pdf Description: DIODE ARR SCHOTTKY 100V ITO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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RS3MB-T RS3MB-T Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+6.64 грн
6000+5.79 грн
9000+5.48 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM250NB06CV RGG TSM250NB06CV_A2007.pdf
TSM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.28 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TSM250NB06CV RGG TSM250NB06CV_A2007.pdf
TSM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 9954 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.58 грн
10+44.42 грн
100+29.10 грн
500+21.11 грн
1000+19.12 грн
2000+17.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSM250NB06LCV RGG TSM250NB06LCV_A2008.pdf
TSM250NB06LCV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.28 грн
10000+15.45 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TSM250NB06LCV RGG TSM250NB06LCV_A2008.pdf
TSM250NB06LCV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.58 грн
10+44.42 грн
100+29.10 грн
500+21.11 грн
1000+19.12 грн
2000+17.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BZT55B9V1 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B9V1 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
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BZY55B9V1 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B9V1 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
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BZT55B9V1 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B9V1 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
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BZS55B9V1 RXG BZS55B2V4%20SERIES_C1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 1206
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BZS55B9V1 RAG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 500MW 1206
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TSM10NB60CI C0G TSM10NB60.pdf
TSM10NB60CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 10A ITO220AB
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TS19501CB10H RBG TS19501CB10H_A1911.pdf
TS19501CB10H RBG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
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TS19501CB10H RBG TS19501CB10H_A1911.pdf
TS19501CB10H RBG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
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P6SMB180CAH P6SMB%20SERIES_Q2209.pdf
P6SMB180CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
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SS23LHRUG SS22L-SS215L_O2103.pdf
SS23LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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PGSMAJ20AHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20AHF3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
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TSP10U60S TSP10U60S_F2103.pdf
TSP10U60S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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TSP10U60S TSP10U60S_F2103.pdf
TSP10U60S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+80.70 грн
10+48.23 грн
Мінімальне замовлення: 4
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P4KE43AH
P4KE43AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3V DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 59.3V
Voltage - Breakdown (Min): 40.9V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 36.8V
Current - Peak Pulse (10/1000µs): 7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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SR105
SR105
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HA0G SR102%20SERIES_G2104.pdf
SR105HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105 B0G SR102%20SERIES_G2104.pdf
SR105 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HB0G SR102%20SERIES_G2104.pdf
SR105HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105HR1G SR102%20SERIES_G2104.pdf
SR105HR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
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SR105 R1G SR102%20SERIES_G2104.pdf
SR105 R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
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P6KE11CAH P6KE SERIES_P2203.pdf
P6KE11CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 15.6V
Voltage - Breakdown (Min): 10.5V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 9.4V
Current - Peak Pulse (10/1000µs): 40A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
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BZX585B47 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B47 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 200MW SOD523F
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MBRF25100CT MBRF2535CT%20SERIES_L2105.pdf
MBRF25100CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
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MBRF2560CT MBRF2535CT%20SERIES_L2105.pdf
MBRF2560CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF25100CTH MBRF2535CT%20SERIES_L2105.pdf
MBRF25100CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2590CT C0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2590CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
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MBRF2550CT C0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2550CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 50V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2550CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2550CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 50V ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2590CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2590CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF2560CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2560CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
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MBRF2545CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF2545CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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BZW04-136B B0G BZW04%20SERIES_J2104.pdf
BZW04-136B B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO204AL
Voltage - Clamping (Max) @ Ipp: 219V
Voltage - Breakdown (Min): 152V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 136V
Current - Peak Pulse (10/1000µs): 1.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
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BZW04-136B A0G BZW04%20SERIES_J2104.pdf
BZW04-136B A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 219V
Voltage - Breakdown (Min): 152V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 136V
Current - Peak Pulse (10/1000µs): 1.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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SS13LHRVG SS12L%20SERIES_Q2103.pdf
SS13LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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SS13LHRVG SS12L%20SERIES_Q2103.pdf
SS13LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A MICRO SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
на замовлення 11919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.98 грн
12+27.12 грн
100+15.36 грн
500+9.54 грн
1000+7.32 грн
2000+6.36 грн
5000+5.63 грн
Мінімальне замовлення: 9
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SS115L SS12L SERIES_Q2103.pdf
SS115L
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SUB SMA
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+7.10 грн
Мінімальне замовлення: 10000
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SS115L SS12L SERIES_Q2103.pdf
SS115L
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SUB SMA
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 19773 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.18 грн
14+22.17 грн
100+14.12 грн
500+9.96 грн
1000+8.89 грн
2000+7.99 грн
5000+6.90 грн
Мінімальне замовлення: 9
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SS115LSH SS12LSH SERIES_B2212.pdf
SS115LSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOD-123HE
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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SS115LSH SS12LSH SERIES_B2212.pdf
SS115LSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
на замовлення 15653 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.27 грн
18+17.68 грн
100+9.41 грн
500+6.55 грн
1000+5.43 грн
2000+5.18 грн
5000+4.43 грн
Мінімальне замовлення: 11
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P6KE82AH P6KE SERIES_P2203.pdf
P6KE82AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TS5213CX533 RFG TS5213_H2206.pdf
TS5213CX533 RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA SOT25
Current - Supply (Max): 3 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.42V @ 80mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TS5213CX533 RFG TS5213_H2206.pdf
TS5213CX533 RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA SOT25
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Current - Supply (Max): 3 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.42V @ 80mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
на замовлення 11955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.10 грн
10+38.09 грн
25+35.78 грн
100+27.41 грн
250+25.45 грн
500+21.66 грн
1000+17.05 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TSP12U120S
TSP12U120S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+20.90 грн
12000+18.63 грн
Мінімальне замовлення: 6000
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TSP12U120S
TSP12U120S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 32021 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.75 грн
10+48.45 грн
100+33.54 грн
500+26.30 грн
1000+22.38 грн
2000+19.94 грн
Мінімальне замовлення: 6
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SMCJ45CA M6G SMCJ%20SERIES_S2104.pdf
SMCJ45CA M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
товару немає в наявності
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SMCJ45CA V7G SMCJ%20SERIES_S2104.pdf
SMCJ45CA V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CAHM6G SMCJ%20SERIES_S2104.pdf
SMCJ45CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMAJ45CHR3G SMAJH%20SERIES_A2102.pdf
SMAJ45CHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 80.3V
Voltage - Breakdown (Min): 50V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 45V
Current - Peak Pulse (10/1000µs): 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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SMAJ45CHR3G SMAJH%20SERIES_A2102.pdf
SMAJ45CHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ45HR3G SMAJH%20SERIES_A2102.pdf
SMAJ45HR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ45HR3G SMAJH%20SERIES_A2102.pdf
SMAJ45HR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TST20H100CW TST20H100CW SERIES_F2104.pdf
TST20H100CW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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TSF20H100C TSF20H100C SERIES_J2105.pdf
TSF20H100C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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RS3MB-T RS3DB-T SERIES_C2102.pdf
RS3MB-T
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.64 грн
6000+5.79 грн
9000+5.48 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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