Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (67496) > Сторінка 1125 з 1125
Фото | Назва | Виробник | Інформація |
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BZT52B4V3 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 5805 шт: термін постачання 21-30 дні (днів) |
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BZT52B3V6 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 4.5µA |
на замовлення 5690 шт: термін постачання 21-30 дні (днів) |
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BZT52B4V7 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 4465 шт: термін постачання 21-30 дні (днів) |
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BZT52B13-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 13V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 5880 шт: термін постачання 21-30 дні (днів) |
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SMDJ36CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 51.6A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: SMDJ Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
SMCJ22CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 44A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
BZW04-376B | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Max. off-state voltage: 376V Breakdown voltage: 418V Max. forward impulse current: 0.67A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: BZW04 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TSM4936DCS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8 Kind of package: tape Case: SOP8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 13nC On-state resistance: 36mΩ Power dissipation: 2.1W Drain current: 5.9A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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TS2938CS33 RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 0.5A Case: SOP8 Mounting: SMD Manufacturer series: TS2938 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...26V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
TSG65N110CE RVG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 35A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 4nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
TSG65N195CE RVG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
TSM060NB06CZ C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 111A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
TSM060NB06LCZ C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 111A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
TSM60NE048PW C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61A Power dissipation: 431W Case: TO247 Gate-source voltage: ±30V On-state resistance: 48mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
US1KH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 10pF Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
SMCJ64A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 15A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
5.0SMDJ30AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 103A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 5.0SMDJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MBR2545CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.82V Max. load current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
MBR2545CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.82V Max. load current: 25A |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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MBR2545CTH | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MUR120S | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MUR120SH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
ES3J | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
TSF30U45C | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
SMBJ43CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 9A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
BZW04-64 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04 Manufacturer series: BZW04 Case: DO41 Max. forward impulse current: 3.9A Max. off-state voltage: 64.1V Breakdown voltage: 71.3V Peak pulse power dissipation: 0.4kW Semiconductor structure: unidirectional Mounting: THT Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
BZW04-64B | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04 Manufacturer series: BZW04 Case: DO41 Max. forward impulse current: 3.9A Max. off-state voltage: 64.1V Breakdown voltage: 71.3V Peak pulse power dissipation: 0.4kW Semiconductor structure: bidirectional Mounting: THT Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
SMCJ24CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR860 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
TSS70U RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
HER1006GH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry Semiconductor structure: common cathode; double Case: TO220AB Features of semiconductor devices: superfast switching Type of diode: rectifying Mounting: THT Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 0.6kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
HER1008GH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry Semiconductor structure: common cathode; double Case: TO220AB Features of semiconductor devices: superfast switching Type of diode: rectifying Mounting: THT Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 1kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
SS26 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Load current: 2A Max. off-state voltage: 60V Kind of package: reel; tape Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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P6SMB24CA M4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Tolerance: ±5% |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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TSS0230LU RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603B Mounting: SMD Max. off-state voltage: 35V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SS13 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 6464 шт: термін постачання 21-30 дні (днів) |
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SS13M | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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SR1060 C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V Mounting: THT Max. off-state voltage: 60V Case: TO220AB Max. forward impulse current: 120A Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSM500P02CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: tape Kind of channel: enhancement |
на замовлення 474 шт: термін постачання 21-30 дні (днів) |
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ES2B | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 100V; 2A; SMB; reel,tape Case: SMB Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
1.5KE20A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 1.5kW; 20V; 56A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 27.7V Breakdown voltage: 20V Max. forward impulse current: 56A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TS5213CX533 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 3.3V Output current: 80mA Case: SOT23-5 Mounting: SMD Manufacturer series: TS5213 Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 2.5...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TS5213CX550 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 5V Output current: 80mA Case: SOT23-5 Mounting: SMD Manufacturer series: TS5213 Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 2.5...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
P4SMA100A | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA Type of diode: TVS Case: SMA Mounting: SMD Max. off-state voltage: 85.5V Semiconductor structure: unidirectional Max. forward impulse current: 3A Breakdown voltage: 95V Peak pulse power dissipation: 0.4kW Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BZX85C6V8 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.8V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 35mA Leakage current: 1µA |
на замовлення 410 шт: термін постачання 21-30 дні (днів) |
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TSM2323CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Kind of package: tape Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.7A Gate charge: 19nC On-state resistance: 39mΩ Power dissipation: 0.8W Gate-source voltage: ±8V |
на замовлення 224 шт: термін постачання 21-30 дні (днів) |
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SMF12A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 10.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
ES2G | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
ES2GAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||
ES2GAL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
ES2GALH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||
ES2GFS | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Kind of package: reel; tape |
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ES2GFSH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||
ES2GH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||
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1PGSMB5931 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 18V; 83mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Zener current: 83mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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GBU1006 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
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В кошику од. на суму грн. |
BZT52B4V3 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 5805 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 4.81 грн |
105+ | 3.91 грн |
250+ | 3.46 грн |
1000+ | 3.32 грн |
BZT52B3V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
на замовлення 5690 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
80+ | 5.32 грн |
100+ | 4.33 грн |
230+ | 4.06 грн |
250+ | 3.83 грн |
1000+ | 3.69 грн |
BZT52B4V7 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 4465 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 4.81 грн |
105+ | 3.91 грн |
250+ | 3.46 грн |
1000+ | 3.32 грн |
BZT52B13-G RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
45+ | 9.63 грн |
85+ | 4.89 грн |
105+ | 3.89 грн |
500+ | 3.73 грн |
SMDJ36CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
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SMCJ22CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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BZW04-376B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.67A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.67A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
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TSM4936DCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Kind of package: tape
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 36mΩ
Power dissipation: 2.1W
Drain current: 5.9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Kind of package: tape
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 36mΩ
Power dissipation: 2.1W
Drain current: 5.9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 46.45 грн |
12+ | 35.44 грн |
25+ | 31.37 грн |
33+ | 28.31 грн |
90+ | 26.74 грн |
TS2938CS33 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2938
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2938
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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TSG65N110CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSM060NB06CZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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TSM060NB06LCZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE048PW C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
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US1KH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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SMCJ64A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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5.0SMDJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Application: automotive industry
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MBR2545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
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MBR2545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 131.74 грн |
5+ | 105.08 грн |
10+ | 98.02 грн |
18+ | 51.75 грн |
50+ | 48.62 грн |
MBR2545CTH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
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MUR120S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
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MUR120SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Application: automotive industry
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ES3J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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TSF30U45C |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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SMBJ43CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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BZW04-64 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
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BZW04-64B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
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SMCJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MUR860 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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TSS70U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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HER1006GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
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HER1008GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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SS26 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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P6SMB24CA M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.17 грн |
80+ | 12.00 грн |
100+ | 11.84 грн |
215+ | 11.29 грн |
250+ | 11.06 грн |
TSS0230LU RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SS13 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 6464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.13 грн |
46+ | 8.55 грн |
100+ | 7.21 грн |
186+ | 4.94 грн |
510+ | 4.70 грн |
SS13M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.40 грн |
29+ | 13.96 грн |
100+ | 8.86 грн |
175+ | 5.25 грн |
482+ | 4.94 грн |
SR1060 C0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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TSM500P02CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 474 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.33 грн |
27+ | 14.90 грн |
50+ | 14.82 грн |
ES2B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; SMB; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; SMB; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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1.5KE20A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 56A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 27.7V
Breakdown voltage: 20V
Max. forward impulse current: 56A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 56A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 27.7V
Breakdown voltage: 20V
Max. forward impulse current: 56A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Tolerance: ±5%
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TS5213CX533 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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TS5213CX550 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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P4SMA100A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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BZX85C6V8 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 35mA
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 35mA
Leakage current: 1µA
на замовлення 410 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 7.52 грн |
100+ | 5.88 грн |
200+ | 4.70 грн |
TSM2323CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
на замовлення 224 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.69 грн |
7+ | 60.07 грн |
33+ | 28.62 грн |
89+ | 27.05 грн |
SMF12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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ES2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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ES2GAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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ES2GAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
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ES2GALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
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ES2GFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
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ES2GFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
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ES2GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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1PGSMB5931 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 83mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 83mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 83mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 83mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.56 грн |
GBU1006 | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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