| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMK07N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm Technology: WMOS™ C2 |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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WMK07N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm Technology: WMOS™ C2 кількість в упаковці: 1 шт |
на замовлення 470 шт: термін постачання 14-21 дні (днів) |
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WMK07N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ M3 Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK080N10LG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 41A Pulsed drain current: 328A Power dissipation: 108.7W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 30.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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WMK080N10LG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 41A Pulsed drain current: 328A Power dissipation: 108.7W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 30.8nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 45 шт: термін постачання 14-21 дні (днів) |
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| WMK08N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 24A; 31W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 31W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 3.8nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 67ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK08N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMK099N10HGS | WAYON | WMK099N10HGS-CYG THT N channel transistors |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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| WMK099N10LGS | WAYON | WMK099N10LGS-CYG THT N channel transistors |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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WMK09N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 409 шт: термін постачання 21-30 дні (днів) |
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WMK09N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 409 шт: термін постачання 14-21 дні (днів) |
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WMK100N07TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 100A Pulsed drain current: 400A Power dissipation: 133W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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WMK100N07TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 100A Pulsed drain current: 400A Power dissipation: 133W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 220 шт: термін постачання 14-21 дні (днів) |
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| WMK100N10TS | WAYON | WMK100N10TS-CYG THT N channel transistors |
на замовлення 12 шт: термін постачання 14-21 дні (днів) |
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WMK10N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 278 шт: термін постачання 21-30 дні (днів) |
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WMK10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 278 шт: термін постачання 14-21 дні (днів) |
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WMK110N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 125A Pulsed drain current: 500A Power dissipation: 347.2W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 73.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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WMK110N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 125A Pulsed drain current: 500A Power dissipation: 347.2W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 73.8nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 36 шт: термін постачання 14-21 дні (днів) |
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| WMK115N15HG4 | WAYON | WMK115N15HG4-CYG THT N channel transistors |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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| WMK119N12HG4 | WAYON | WMK119N12HG4-CYG THT N channel transistors |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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| WMK119N12LG4 | WAYON | WMK119N12LG4-CYG THT N channel transistors |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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WMK11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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WMK11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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WMK120N04TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 104W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhancement |
на замовлення 169 шт: термін постачання 21-30 дні (днів) |
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WMK120N04TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 104W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 169 шт: термін постачання 14-21 дні (днів) |
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| WMK130N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3 Case: TO220-3 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 188nC Reverse recovery time: 196ns On-state resistance: 5.2mΩ Power dissipation: 416W Drain current: 117A Drain-source voltage: 200V Pulsed drain current: 620A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMK130N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Pulsed drain current: 435A Power dissipation: 312W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 195ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK13N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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WMK13N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 242 шт: термін постачання 14-21 дні (днів) |
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| WMK13N80M3 | WAYON | WMK13N80M3-CYG THT N channel transistors |
на замовлення 477 шт: термін постачання 14-21 дні (днів) |
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WMK14N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 425 шт: термін постачання 21-30 дні (днів) |
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WMK14N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 425 шт: термін постачання 14-21 дні (днів) |
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| WMK14N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13nC Pulsed drain current: 26A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMK14N70C2 | WAYON | WMK14N70C2-CYG THT N channel transistors |
на замовлення 420 шт: термін постачання 14-21 дні (днів) |
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| WMK15N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Pulsed drain current: 60A Power dissipation: 156W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMK160N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Power dissipation: 416W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 185nC Reverse recovery time: 260ns Pulsed drain current: 580A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK161N15T2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 161A Power dissipation: 365W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 78nC Pulsed drain current: 540A |
на замовлення 313 шт: термін постачання 21-30 дні (днів) |
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WMK161N15T2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 161A Power dissipation: 365W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 78nC Pulsed drain current: 540A кількість в упаковці: 1 шт |
на замовлення 313 шт: термін постачання 14-21 дні (днів) |
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WMK16N10T1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15.8A Power dissipation: 44.6W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 20.6nC Pulsed drain current: 63.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK16N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK16N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK16N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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WMK16N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 408 шт: термін постачання 14-21 дні (днів) |
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WMK16N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK16N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMK175N10HG4 | WAYON | WMK175N10HG4-CYG THT N channel transistors |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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| WMK175N10LG4 | WAYON | WMK175N10LG4-CYG THT N channel transistors |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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WMK180N03TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Pulsed drain current: 720A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMK18N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3 Case: TO220-3 Mounting: THT Reverse recovery time: 80ns On-state resistance: 135mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 36W Pulsed drain current: 39A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 7.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK190N03TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 192W Drain current: 190A Pulsed drain current: 760A Gate charge: 0.1µC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMK190N15HG4 | WAYON | WMK190N15HG4-CYG THT N channel transistors |
на замовлення 205 шт: термін постачання 14-21 дні (днів) |
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| WMK20N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK20N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 389 шт: термін постачання 21-30 дні (днів) |
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WMK20N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 389 шт: термін постачання 14-21 дні (днів) |
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WMK220N20HG3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 78A Pulsed drain current: 312A Power dissipation: 312.5W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK25N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 41.7W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK25N10T1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 100A Power dissipation: 53.2W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 37.9nC Kind of package: tube Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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WMK25N10T1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 100A Power dissipation: 53.2W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 37.9nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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WMK25N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 239 шт: термін постачання 21-30 дні (днів) |
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| WMK07N65C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
на замовлення 470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.95 грн |
| 7+ | 58.80 грн |
| 10+ | 46.42 грн |
| 25+ | 34.85 грн |
| 100+ | 31.16 грн |
| 250+ | 29.03 грн |
| WMK07N65C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
кількість в упаковці: 1 шт
на замовлення 470 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.14 грн |
| 5+ | 73.27 грн |
| 10+ | 55.70 грн |
| 25+ | 41.82 грн |
| 100+ | 37.39 грн |
| 250+ | 34.84 грн |
| 500+ | 33.06 грн |
| WMK07N80M3 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK080N10LG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.87 грн |
| 11+ | 39.77 грн |
| WMK080N10LG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.65 грн |
| 10+ | 49.56 грн |
| 50+ | 39.66 грн |
| 250+ | 35.72 грн |
| 1000+ | 34.74 грн |
| WMK08N20JN |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 24A; 31W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 3.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 24A; 31W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 3.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
товару немає в наявності
В кошику
од. на суму грн.
| WMK08N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK099N10HGS |
Виробник: WAYON
WMK099N10HGS-CYG THT N channel transistors
WMK099N10HGS-CYG THT N channel transistors
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.00 грн |
| 30+ | 39.26 грн |
| 82+ | 37.10 грн |
| WMK099N10LGS |
Виробник: WAYON
WMK099N10LGS-CYG THT N channel transistors
WMK099N10LGS-CYG THT N channel transistors
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.03 грн |
| 26+ | 45.56 грн |
| 71+ | 43.00 грн |
| WMK09N60C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 409 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.48 грн |
| 7+ | 61.26 грн |
| 10+ | 48.63 грн |
| 25+ | 36.74 грн |
| 100+ | 33.05 грн |
| 250+ | 30.51 грн |
| WMK09N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 409 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.38 грн |
| 5+ | 76.34 грн |
| 10+ | 58.36 грн |
| 25+ | 44.09 грн |
| 100+ | 39.66 грн |
| 250+ | 36.61 грн |
| 500+ | 35.13 грн |
| WMK100N07TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.24 грн |
| 10+ | 43.96 грн |
| 50+ | 36.57 грн |
| WMK100N07TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 220 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.48 грн |
| 10+ | 54.77 грн |
| 50+ | 43.89 грн |
| 250+ | 39.56 грн |
| 1000+ | 38.18 грн |
| WMK100N10TS |
Виробник: WAYON
WMK100N10TS-CYG THT N channel transistors
WMK100N10TS-CYG THT N channel transistors
на замовлення 12 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.47 грн |
| 14+ | 87.58 грн |
| 37+ | 83.65 грн |
| WMK10N70C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK10N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 278 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.43 грн |
| 4+ | 121.37 грн |
| 10+ | 96.77 грн |
| 25+ | 72.99 грн |
| 100+ | 64.78 грн |
| 250+ | 59.86 грн |
| WMK10N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 278 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.52 грн |
| 3+ | 151.24 грн |
| 10+ | 116.12 грн |
| 25+ | 87.58 грн |
| 100+ | 77.74 грн |
| 250+ | 71.84 грн |
| 500+ | 68.88 грн |
| WMK110N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 355.02 грн |
| 10+ | 311.62 грн |
| WMK110N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 426.03 грн |
| 10+ | 388.33 грн |
| 50+ | 331.63 грн |
| 250+ | 297.19 грн |
| 1000+ | 287.35 грн |
| WMK115N15HG4 |
Виробник: WAYON
WMK115N15HG4-CYG THT N channel transistors
WMK115N15HG4-CYG THT N channel transistors
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.19 грн |
| 13+ | 96.44 грн |
| 34+ | 90.53 грн |
| WMK119N12HG4 |
Виробник: WAYON
WMK119N12HG4-CYG THT N channel transistors
WMK119N12HG4-CYG THT N channel transistors
на замовлення 14 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.53 грн |
| 28+ | 42.32 грн |
| 76+ | 39.95 грн |
| WMK119N12LG4 |
Виробник: WAYON
WMK119N12LG4-CYG THT N channel transistors
WMK119N12LG4-CYG THT N channel transistors
на замовлення 39 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.00 грн |
| 28+ | 41.92 грн |
| 77+ | 39.66 грн |
| WMK11N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.16 грн |
| 5+ | 86.68 грн |
| WMK11N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 108.02 грн |
| 10+ | 83.25 грн |
| 25+ | 62.39 грн |
| 100+ | 56.49 грн |
| 250+ | 52.06 грн |
| 500+ | 49.79 грн |
| WMK120N04TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 169 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.75 грн |
| 13+ | 32.64 грн |
| 50+ | 27.31 грн |
| WMK120N04TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 169 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.71 грн |
| 10+ | 40.67 грн |
| 50+ | 32.77 грн |
| 250+ | 29.33 грн |
| 1000+ | 28.93 грн |
| WMK130N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 188nC
Reverse recovery time: 196ns
On-state resistance: 5.2mΩ
Power dissipation: 416W
Drain current: 117A
Drain-source voltage: 200V
Pulsed drain current: 620A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 188nC
Reverse recovery time: 196ns
On-state resistance: 5.2mΩ
Power dissipation: 416W
Drain current: 117A
Drain-source voltage: 200V
Pulsed drain current: 620A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| WMK130N25JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
товару немає в наявності
В кошику
од. на суму грн.
| WMK13N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.07 грн |
| 7+ | 58.80 грн |
| 10+ | 46.83 грн |
| 50+ | 35.10 грн |
| 100+ | 31.57 грн |
| WMK13N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 242 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.08 грн |
| 5+ | 73.27 грн |
| 10+ | 56.19 грн |
| 50+ | 42.12 грн |
| 100+ | 37.89 грн |
| 250+ | 35.13 грн |
| 500+ | 33.56 грн |
| WMK13N80M3 |
Виробник: WAYON
WMK13N80M3-CYG THT N channel transistors
WMK13N80M3-CYG THT N channel transistors
на замовлення 477 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 325.35 грн |
| 12+ | 102.34 грн |
| 32+ | 97.42 грн |
| WMK14N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.41 грн |
| 5+ | 97.59 грн |
| 10+ | 77.91 грн |
| 50+ | 58.22 грн |
| 100+ | 52.48 грн |
| 250+ | 48.38 грн |
| WMK14N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 425 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.61 грн |
| 10+ | 93.49 грн |
| 50+ | 69.87 грн |
| 100+ | 62.98 грн |
| 250+ | 58.06 грн |
| WMK14N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 26A
товару немає в наявності
В кошику
од. на суму грн.
| WMK14N70C2 |
Виробник: WAYON
WMK14N70C2-CYG THT N channel transistors
WMK14N70C2-CYG THT N channel transistors
на замовлення 420 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 203.48 грн |
| 17+ | 68.88 грн |
| 47+ | 64.95 грн |
| WMK15N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK160N25JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 416W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 185nC
Reverse recovery time: 260ns
Pulsed drain current: 580A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 416W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 185nC
Reverse recovery time: 260ns
Pulsed drain current: 580A
товару немає в наявності
В кошику
од. на суму грн.
| WMK161N15T2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
на замовлення 313 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 191.64 грн |
| 10+ | 168.11 грн |
| 50+ | 148.43 грн |
| 100+ | 133.67 грн |
| 250+ | 127.93 грн |
| WMK161N15T2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
кількість в упаковці: 1 шт
на замовлення 313 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.97 грн |
| 10+ | 209.49 грн |
| 50+ | 178.12 грн |
| 100+ | 160.40 грн |
| 250+ | 153.51 грн |
| WMK16N10T1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20.6nC
Pulsed drain current: 63.2A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20.6nC
Pulsed drain current: 63.2A
товару немає в наявності
В кошику
од. на суму грн.
| WMK16N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK16N60FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK16N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 408 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.43 грн |
| 4+ | 120.55 грн |
| 10+ | 96.77 грн |
| 50+ | 72.17 грн |
| 100+ | 64.78 грн |
| 250+ | 59.86 грн |
| WMK16N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 408 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.52 грн |
| 3+ | 150.22 грн |
| 10+ | 116.12 грн |
| 50+ | 86.60 грн |
| 100+ | 77.74 грн |
| 250+ | 71.84 грн |
| 500+ | 68.88 грн |
| WMK16N65FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK16N70C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK175N10HG4 |
Виробник: WAYON
WMK175N10HG4-CYG THT N channel transistors
WMK175N10HG4-CYG THT N channel transistors
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.99 грн |
| 35+ | 34.15 грн |
| 94+ | 32.28 грн |
| WMK175N10LG4 |
Виробник: WAYON
WMK175N10LG4-CYG THT N channel transistors
WMK175N10LG4-CYG THT N channel transistors
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.04 грн |
| 37+ | 31.79 грн |
| 102+ | 30.01 грн |
| WMK180N03TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK18N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
товару немає в наявності
В кошику
од. на суму грн.
| WMK190N03TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
товару немає в наявності
В кошику
од. на суму грн.
| WMK190N15HG4 |
Виробник: WAYON
WMK190N15HG4-CYG THT N channel transistors
WMK190N15HG4-CYG THT N channel transistors
на замовлення 205 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.38 грн |
| 19+ | 62.98 грн |
| 52+ | 59.04 грн |
| WMK20N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK20N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 389 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.17 грн |
| 10+ | 123.83 грн |
| 50+ | 92.67 грн |
| 100+ | 83.65 грн |
| 250+ | 78.73 грн |
| WMK20N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 389 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.45 грн |
| 3+ | 192.12 грн |
| 10+ | 148.59 грн |
| 50+ | 111.20 грн |
| 100+ | 100.38 грн |
| 250+ | 94.47 грн |
| WMK220N20HG3 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK25N06TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK25N10T1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.74 грн |
| 20+ | 20.75 грн |
| WMK25N10T1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.69 грн |
| 12+ | 25.85 грн |
| 50+ | 20.86 грн |
| 250+ | 18.89 грн |
| 1000+ | 18.21 грн |
| WMK25N80M3 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 425.67 грн |
| 3+ | 329.66 грн |
| 10+ | 264.06 грн |
| 50+ | 197.63 грн |
| 100+ | 177.95 грн |













