| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| WML10N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 33nC Pulsed drain current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML10N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 33nC Pulsed drain current: 40A |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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WML10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 385 шт: термін постачання 14-30 дні (днів) |
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| WML12N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 18A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML12N105C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 18A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML12N70D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 12A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML12N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 499 шт: термін постачання 14-30 дні (днів) |
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| WML13N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Pulsed drain current: 25A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 9.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML13N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 626 шт: термін постачання 14-30 дні (днів) |
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| WML13N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 20.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML13N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 340 шт: термін постачання 14-30 дні (днів) |
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WML14N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
на замовлення 213 шт: термін постачання 14-30 дні (днів) |
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WML14N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
на замовлення 444 шт: термін постачання 14-30 дні (днів) |
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WML14N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 11A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 325 шт: термін постачання 14-30 дні (днів) |
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WML14N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML15N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Pulsed drain current: 60A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
на замовлення 503 шт: термін постачання 14-30 дні (днів) |
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WML15N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 14.6nC Kind of package: tube Kind of channel: enhancement |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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WML15N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.8A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 14.6nC Pulsed drain current: 26A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML16N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML16N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML16N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.4A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19.5nC Pulsed drain current: 35A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| WML17N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 6.5A Pulsed drain current: 33A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 7.1nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 98ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML18N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP Case: TO220FP Mounting: THT Reverse recovery time: 80ns On-state resistance: 135mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 36W Pulsed drain current: 39A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 7.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML18N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 50A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML18N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 18A Pulsed drain current: 72A Power dissipation: 44.6W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML18N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| WML20N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML20N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML22N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 14.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML25N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML25N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML25N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 80A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML25N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 287 шт: термін постачання 14-30 дні (днів) |
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WML26N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
на замовлення 393 шт: термін постачання 14-30 дні (днів) |
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WML26N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
на замовлення 85 шт: термін постачання 14-30 дні (днів) |
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WML26N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML26N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 197 шт: термін постачання 14-30 дні (днів) |
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| WML26N65F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML26N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 50A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 198mΩ Mounting: THT Gate charge: 34.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML28N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 85A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML28N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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WML28N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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WML28N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W Technology: WMOS™ C4 Mounting: THT Case: TO220FP Kind of package: tube Gate charge: 27.3nC On-state resistance: 0.16Ω Drain current: 13A Gate-source voltage: ±30V Power dissipation: 31W Pulsed drain current: 65A Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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| WML28N65F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W Technology: WMOS™ F2 Mounting: THT Case: TO220FP Kind of package: tube Gate charge: 27.3nC On-state resistance: 0.19Ω Drain current: 13A Gate-source voltage: ±30V Power dissipation: 31W Pulsed drain current: 65A Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML30N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
WML340N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 28A Pulsed drain current: 112A Power dissipation: 59.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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WML36N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
WML36N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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| WML36N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
WML38N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
WML38N65FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
WML3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: WMOS™ D1 Case: TO220FP Kind of package: tube Polarisation: unipolar Gate charge: 40nC Drain current: 3A On-state resistance: 5.7Ω Pulsed drain current: 12A Gate-source voltage: ±30V Power dissipation: 41W Drain-source voltage: 1.5kV |
на замовлення 182 шт: термін постачання 14-30 дні (днів) |
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| WML40N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML4N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 40W Technology: WMOS™ D1 Gate charge: 26nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML4N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 45W Technology: WMOS™ D1 Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML50N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 7.1nC Reverse recovery time: 182ns On-state resistance: 56mΩ Drain current: 16A Gate-source voltage: ±20V Power dissipation: 31W Pulsed drain current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
WML53N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 129 шт: термін постачання 14-30 дні (днів) |
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WML53N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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WML53N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| WML10N80D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
товару немає в наявності
В кошику
од. на суму грн.
| WML10N80D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
на замовлення 251 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.50 грн |
| 10+ | 45.45 грн |
| 50+ | 40.01 грн |
| 250+ | 36.08 грн |
| WML10N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 385 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.62 грн |
| 25+ | 56.92 грн |
| 100+ | 50.22 грн |
| WML12N100C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML12N105C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML12N70D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML12N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.57 грн |
| 25+ | 78.68 грн |
| 100+ | 71.99 грн |
| WML13N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML13N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 626 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.50 грн |
| 11+ | 40.68 грн |
| 50+ | 30.72 грн |
| 250+ | 27.04 грн |
| 500+ | 23.52 грн |
| WML13N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 20.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 20.3nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML13N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 340 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.29 грн |
| 10+ | 97.10 грн |
| 50+ | 86.22 грн |
| 100+ | 77.85 грн |
| WML14N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
на замовлення 213 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.40 грн |
| 10+ | 76.17 грн |
| 25+ | 67.80 грн |
| 100+ | 63.62 грн |
| WML14N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
на замовлення 444 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.11 грн |
| 25+ | 53.57 грн |
| 100+ | 47.71 грн |
| WML14N70C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 325 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.13 грн |
| 7+ | 66.97 грн |
| 25+ | 58.59 грн |
| 100+ | 53.57 грн |
| WML14N70C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
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| WML15N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 503 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.79 грн |
| 13+ | 33.06 грн |
| 50+ | 24.94 грн |
| 250+ | 22.10 грн |
| 500+ | 19.17 грн |
| WML15N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 71 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.16 грн |
| 6+ | 81.45 грн |
| 10+ | 68.97 грн |
| 25+ | 61.78 грн |
| WML15N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
товару немає в наявності
В кошику
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| WML16N60FD |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| WML16N65FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| WML16N65SR |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
товару немає в наявності
В кошику
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| WML17N25JN |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
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| WML18N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
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В кошику
од. на суму грн.
| WML18N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| WML18N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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| WML18N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
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| WML20N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
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| WML20N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| WML22N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
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| WML25N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
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| WML25N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| WML25N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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| WML25N80M3 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 287 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 184.80 грн |
| 5+ | 154.86 грн |
| 25+ | 141.46 грн |
| WML26N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 393 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.67 грн |
| 4+ | 138.95 грн |
| 10+ | 118.03 грн |
| 25+ | 104.63 грн |
| 100+ | 97.10 грн |
| 250+ | 92.91 грн |
| WML26N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 85 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.05 грн |
| 4+ | 128.07 грн |
| 10+ | 107.98 грн |
| 25+ | 97.10 грн |
| WML26N60FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML26N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 197 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.30 грн |
| 5+ | 103.80 грн |
| 25+ | 92.08 грн |
| 100+ | 82.87 грн |
| WML26N65F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML26N65SR |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML28N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML28N60C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 80 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.35 грн |
| 10+ | 128.91 грн |
| 25+ | 114.68 грн |
| WML28N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 80 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.53 грн |
| 10+ | 131.42 грн |
| 25+ | 118.03 грн |
| WML28N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Technology: WMOS™ C4
Mounting: THT
Case: TO220FP
Kind of package: tube
Gate charge: 27.3nC
On-state resistance: 0.16Ω
Drain current: 13A
Gate-source voltage: ±30V
Power dissipation: 31W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Technology: WMOS™ C4
Mounting: THT
Case: TO220FP
Kind of package: tube
Gate charge: 27.3nC
On-state resistance: 0.16Ω
Drain current: 13A
Gate-source voltage: ±30V
Power dissipation: 31W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 100 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.73 грн |
| 5+ | 116.35 грн |
| 25+ | 102.96 грн |
| 100+ | 92.91 грн |
| WML28N65F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Technology: WMOS™ F2
Mounting: THT
Case: TO220FP
Kind of package: tube
Gate charge: 27.3nC
On-state resistance: 0.19Ω
Drain current: 13A
Gate-source voltage: ±30V
Power dissipation: 31W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Technology: WMOS™ F2
Mounting: THT
Case: TO220FP
Kind of package: tube
Gate charge: 27.3nC
On-state resistance: 0.19Ω
Drain current: 13A
Gate-source voltage: ±30V
Power dissipation: 31W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| WML30N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML340N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 59.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 59.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 148.74 грн |
| 10+ | 129.74 грн |
| WML36N60C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML36N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 328.13 грн |
| 3+ | 272.05 грн |
| WML36N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML38N60FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML38N65FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Gate charge: 40nC
Drain current: 3A
On-state resistance: 5.7Ω
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Gate charge: 40nC
Drain current: 3A
On-state resistance: 5.7Ω
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
на замовлення 182 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.62 грн |
| 7+ | 64.45 грн |
| 30+ | 57.76 грн |
| 120+ | 51.06 грн |
| WML40N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
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| WML4N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
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| WML4N90D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 40W
Technology: WMOS™ D1
Gate charge: 26nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 40W
Technology: WMOS™ D1
Gate charge: 26nC
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| WML4N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 45W
Technology: WMOS™ D1
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 45W
Technology: WMOS™ D1
Gate charge: 34nC
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| WML50N25JN |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.1nC
Reverse recovery time: 182ns
On-state resistance: 56mΩ
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 31W
Pulsed drain current: 90A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.1nC
Reverse recovery time: 182ns
On-state resistance: 56mΩ
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 31W
Pulsed drain current: 90A
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| WML53N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 129 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 327.23 грн |
| 5+ | 273.72 грн |
| 25+ | 241.91 грн |
| 100+ | 218.47 грн |
| WML53N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 16 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 358.78 грн |
| 3+ | 297.16 грн |
| 10+ | 250.28 грн |
| WML53N60FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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