| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMB049N12HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 66A Pulsed drain current: 420A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 62 шт: термін постачання 14-21 дні (днів) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 242 шт: термін постачання 14-21 дні (днів) |
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| WMB060N08LG2 | WAYON | WMB060N08LG2-CYG SMD N channel transistors |
на замовлення 87 шт: термін постачання 14-21 дні (днів) |
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WMB060N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 380A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 81.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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WMB060N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 380A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 81.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 97 шт: термін постачання 14-21 дні (днів) |
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WMB060N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 380A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB060N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 380A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB072N12HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 90A Pulsed drain current: 360A Power dissipation: 104W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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WMB072N12HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 90A Pulsed drain current: 360A Power dissipation: 104W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 54 шт: термін постачання 14-21 дні (днів) |
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WMB072N12LG2-S | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 90A Pulsed drain current: 360A Power dissipation: 118W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 52.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB072N12LG2-S | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 90A Pulsed drain current: 360A Power dissipation: 118W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 52.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.5A Pulsed drain current: 168A Power dissipation: 30.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.5A Pulsed drain current: 168A Power dissipation: 30.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 296A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 296A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46.8A Pulsed drain current: 296A Power dissipation: 84W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 30.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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WMB080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46.8A Pulsed drain current: 296A Power dissipation: 84W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 30.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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WMB090DN04LG2 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 28.5A Pulsed drain current: 180A Power dissipation: 31.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 497 шт: термін постачання 21-30 дні (днів) |
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WMB090DN04LG2 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 28.5A Pulsed drain current: 180A Power dissipation: 31.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 497 шт: термін постачання 14-21 дні (днів) |
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WMB090DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W Polarisation: unipolar Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Pulsed drain current: 160A Drain current: 40A Drain-source voltage: 65V Gate charge: 22.1nC On-state resistance: 10.5mΩ Power dissipation: 27.8W Gate-source voltage: ±20V Kind of package: reel; tape |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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WMB090DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W Polarisation: unipolar Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Pulsed drain current: 160A Drain current: 40A Drain-source voltage: 65V Gate charge: 22.1nC On-state resistance: 10.5mΩ Power dissipation: 27.8W Gate-source voltage: ±20V Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 99 шт: термін постачання 14-21 дні (днів) |
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WMB090N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Pulsed drain current: 200A Power dissipation: 32.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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WMB090N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Pulsed drain current: 200A Power dissipation: 32.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 211 шт: термін постачання 14-21 дні (днів) |
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| WMB090NV6LG4 | WAYON | WMB090NV6LG4-CYG SMD N channel transistors |
на замовлення 365 шт: термін постачання 14-21 дні (днів) |
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WMB093N15HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W Case: PDFN5060-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 37.2nC On-state resistance: 9.3mΩ Drain current: 95A Pulsed drain current: 380A Gate-source voltage: ±20V Power dissipation: 178.5W Drain-source voltage: 150V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMB098N03LG2 | WAYON | WMB098N03LG2-CYG SMD N channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| WMB099N10HGS | WAYON | WMB099N10HGS-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB099N10LG2 | WAYON | WMB099N10LG2-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB099N10LGS | WAYON | WMB099N10LGS-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB100N04TS | WAYON | WMB100N04TS-CYG SMD N channel transistors |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB100P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Pulsed drain current: -400A Power dissipation: 73.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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WMB100P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Pulsed drain current: -400A Power dissipation: 73.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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WMB108N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 108A Pulsed drain current: 432A Power dissipation: 69W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
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WMB108N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 108A Pulsed drain current: 432A Power dissipation: 69W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 370 шт: термін постачання 14-21 дні (днів) |
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| WMB115N15HG4 | WAYON | WMB115N15HG4-CYG SMD N channel transistors |
на замовлення 83 шт: термін постачання 14-21 дні (днів) |
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WMB119N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 148A Power dissipation: 75W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB119N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 148A Power dissipation: 75W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB119N12HG4 | WAYON | WMB119N12HG4-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB119N12LG4 | WAYON | WMB119N12LG4-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB120P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -120A Pulsed drain current: -480A Power dissipation: 168.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB128N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W Case: PDFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Power dissipation: 127.5W Drain current: 128A Pulsed drain current: 512A Kind of package: reel; tape |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB128N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W Case: PDFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Power dissipation: 127.5W Drain current: 128A Pulsed drain current: 512A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB129N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 129A Pulsed drain current: 402A Power dissipation: 127.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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WMB129N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 129A Pulsed drain current: 402A Power dissipation: 127.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 92 шт: термін постачання 14-21 дні (днів) |
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 32A Pulsed drain current: 128A Power dissipation: 25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 32A Pulsed drain current: 128A Power dissipation: 25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 65V Drain current: 34A Gate charge: 14nC On-state resistance: 14mΩ Power dissipation: 27W Gate-source voltage: ±20V Pulsed drain current: 136A Case: PDFN5060-8 Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 65V Drain current: 34A Gate charge: 14nC On-state resistance: 14mΩ Power dissipation: 27W Gate-source voltage: ±20V Pulsed drain current: 136A Case: PDFN5060-8 Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| WMB14N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Case: PDFN5060-8 On-state resistance: 390mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 90 шт: термін постачання 14-21 дні (днів) |
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| WMB175DN10LG4 | WAYON | WMB175DN10LG4-CYG Multi channel transistors |
на замовлення 95 шт: термін постачання 14-21 дні (днів) |
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WMB175N10HG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 30ns |
на замовлення 1766 шт: термін постачання 21-30 дні (днів) |
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WMB175N10HG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 30ns кількість в упаковці: 1 шт |
на замовлення 1766 шт: термін постачання 14-21 дні (днів) |
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WMB175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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WMB175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2490 шт: термін постачання 14-21 дні (днів) |
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| WMB18N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: PDFN5060-8 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMB240P10HG4 | WAYON | WMB240P10HG4-CYG SMD P channel transistors |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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| WMB26DN06TS | WAYON | WMB26DN06TS-CYG Multi channel transistors |
на замовлення 490 шт: термін постачання 14-21 дні (днів) |
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| WMB049N12HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 62 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.31 грн |
| 10+ | 135.16 грн |
| 12+ | 101.66 грн |
| 31+ | 95.96 грн |
| 6000+ | 93.11 грн |
| 12000+ | 92.16 грн |
| WMB050N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.25 грн |
| 26+ | 15.68 грн |
| 31+ | 12.98 грн |
| 100+ | 11.40 грн |
| WMB050N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 242 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.90 грн |
| 16+ | 19.53 грн |
| 25+ | 15.58 грн |
| 100+ | 13.68 грн |
| 500+ | 12.64 грн |
| 3000+ | 11.88 грн |
| WMB060N08LG2 |
Виробник: WAYON
WMB060N08LG2-CYG SMD N channel transistors
WMB060N08LG2-CYG SMD N channel transistors
на замовлення 87 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.09 грн |
| 26+ | 43.89 грн |
| 71+ | 41.52 грн |
| WMB060N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.36 грн |
| 10+ | 53.60 грн |
| 23+ | 42.04 грн |
| 61+ | 39.74 грн |
| WMB060N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 97 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.83 грн |
| 10+ | 66.79 грн |
| 23+ | 50.45 грн |
| 61+ | 47.69 грн |
| 6000+ | 45.89 грн |
| 12000+ | 45.79 грн |
| WMB060N10LGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.21 грн |
| 10+ | 54.39 грн |
| 22+ | 42.36 грн |
| 61+ | 40.06 грн |
| WMB060N10LGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.85 грн |
| 10+ | 67.78 грн |
| 22+ | 50.83 грн |
| 61+ | 48.07 грн |
| 6000+ | 46.65 грн |
| 12000+ | 46.17 грн |
| WMB072N12HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.08 грн |
| 10+ | 80.75 грн |
| 15+ | 62.55 грн |
| 41+ | 59.38 грн |
| WMB072N12HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 54 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.50 грн |
| 10+ | 100.63 грн |
| 15+ | 75.05 грн |
| 41+ | 71.25 грн |
| 6000+ | 69.35 грн |
| 12000+ | 68.40 грн |
| WMB072N12LG2-S |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 118W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 52.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 118W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 52.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.74 грн |
| 10+ | 68.09 грн |
| 18+ | 53.04 грн |
| 25+ | 52.25 грн |
| 49+ | 49.88 грн |
| WMB072N12LG2-S |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 118W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 52.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 118W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 52.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.08 грн |
| 10+ | 84.85 грн |
| 18+ | 63.65 грн |
| 25+ | 62.70 грн |
| 49+ | 59.85 грн |
| 12000+ | 57.95 грн |
| WMB080N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.81 грн |
| 26+ | 15.76 грн |
| 30+ | 13.22 грн |
| 96+ | 9.74 грн |
| 262+ | 9.26 грн |
| WMB080N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.97 грн |
| 16+ | 19.63 грн |
| 25+ | 15.87 грн |
| 96+ | 11.69 грн |
| 262+ | 11.12 грн |
| 6000+ | 11.02 грн |
| 12000+ | 10.74 грн |
| WMB080N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.21 грн |
| 10+ | 45.13 грн |
| 25+ | 42.52 грн |
| 28+ | 33.65 грн |
| 76+ | 31.83 грн |
| WMB080N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.85 грн |
| 10+ | 56.24 грн |
| 25+ | 51.02 грн |
| 28+ | 40.38 грн |
| 76+ | 38.19 грн |
| 6000+ | 36.67 грн |
| WMB080N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.71 грн |
| 12+ | 33.65 грн |
| 25+ | 30.24 грн |
| 39+ | 23.91 грн |
| WMB080N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.46 грн |
| 10+ | 41.93 грн |
| 25+ | 36.29 грн |
| 39+ | 28.69 грн |
| 107+ | 27.17 грн |
| 6000+ | 26.13 грн |
| WMB090DN04LG2 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 497 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.93 грн |
| 18+ | 22.88 грн |
| 25+ | 20.66 грн |
| 58+ | 16.15 грн |
| 159+ | 15.28 грн |
| WMB090DN04LG2 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 497 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.11 грн |
| 11+ | 28.51 грн |
| 25+ | 24.80 грн |
| 58+ | 19.38 грн |
| 159+ | 18.34 грн |
| 6000+ | 17.58 грн |
| WMB090DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.21 грн |
| 10+ | 40.22 грн |
| 25+ | 36.18 грн |
| 34+ | 28.26 грн |
| 91+ | 26.68 грн |
| WMB090DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 99 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.85 грн |
| 10+ | 50.12 грн |
| 25+ | 43.42 грн |
| 34+ | 33.92 грн |
| 91+ | 32.02 грн |
| 6000+ | 30.88 грн |
| WMB090N04LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.48 грн |
| 20+ | 20.58 грн |
| 25+ | 17.02 грн |
| 71+ | 13.22 грн |
| 193+ | 12.51 грн |
| WMB090N04LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 211 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.18 грн |
| 12+ | 25.65 грн |
| 25+ | 20.43 грн |
| 71+ | 15.87 грн |
| 193+ | 15.01 грн |
| 6000+ | 14.54 грн |
| 12000+ | 14.44 грн |
| WMB090NV6LG4 |
Виробник: WAYON
WMB090NV6LG4-CYG SMD N channel transistors
WMB090NV6LG4-CYG SMD N channel transistors
на замовлення 365 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 44.51 грн |
| 69+ | 16.44 грн |
| 188+ | 15.58 грн |
| WMB093N15HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Power dissipation: 178.5W
Drain-source voltage: 150V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Power dissipation: 178.5W
Drain-source voltage: 150V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB098N03LG2 |
Виробник: WAYON
WMB098N03LG2-CYG SMD N channel transistors
WMB098N03LG2-CYG SMD N channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 44.81 грн |
| 104+ | 10.74 грн |
| 286+ | 10.17 грн |
| WMB099N10HGS |
Виробник: WAYON
WMB099N10HGS-CYG SMD N channel transistors
WMB099N10HGS-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.75 грн |
| 39+ | 29.07 грн |
| 106+ | 27.46 грн |
| WMB099N10LG2 |
Виробник: WAYON
WMB099N10LG2-CYG SMD N channel transistors
WMB099N10LG2-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.92 грн |
| 29+ | 39.81 грн |
| 78+ | 37.62 грн |
| WMB099N10LGS |
Виробник: WAYON
WMB099N10LGS-CYG SMD N channel transistors
WMB099N10LGS-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.75 грн |
| 39+ | 29.07 грн |
| 106+ | 27.46 грн |
| WMB100N04TS |
Виробник: WAYON
WMB100N04TS-CYG SMD N channel transistors
WMB100N04TS-CYG SMD N channel transistors
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.26 грн |
| 50+ | 22.61 грн |
| 137+ | 21.38 грн |
| WMB100P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.26 грн |
| WMB100P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 77.76 грн |
| 10+ | 45.28 грн |
| 25+ | 39.14 грн |
| 37+ | 30.59 грн |
| 101+ | 28.88 грн |
| 6000+ | 27.93 грн |
| 12000+ | 27.84 грн |
| WMB108N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.66 грн |
| 20+ | 20.27 грн |
| 25+ | 18.21 грн |
| 66+ | 14.25 грн |
| 181+ | 13.46 грн |
| WMB108N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 370 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 44.00 грн |
| 12+ | 25.26 грн |
| 25+ | 21.85 грн |
| 66+ | 17.10 грн |
| 181+ | 16.15 грн |
| 6000+ | 15.68 грн |
| 12000+ | 15.58 грн |
| WMB115N15HG4 |
Виробник: WAYON
WMB115N15HG4-CYG SMD N channel transistors
WMB115N15HG4-CYG SMD N channel transistors
на замовлення 83 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.27 грн |
| 18+ | 65.55 грн |
| 48+ | 61.75 грн |
| WMB119N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.57 грн |
| 12+ | 33.01 грн |
| 25+ | 29.69 грн |
| 41+ | 23.12 грн |
| WMB119N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.48 грн |
| 10+ | 41.14 грн |
| 25+ | 35.63 грн |
| 41+ | 27.74 грн |
| 111+ | 26.22 грн |
| 6000+ | 25.46 грн |
| 12000+ | 25.37 грн |
| WMB119N12HG4 |
Виробник: WAYON
WMB119N12HG4-CYG SMD N channel transistors
WMB119N12HG4-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.25 грн |
| 29+ | 39.05 грн |
| 79+ | 36.86 грн |
| WMB119N12LG4 |
Виробник: WAYON
WMB119N12LG4-CYG SMD N channel transistors
WMB119N12LG4-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.25 грн |
| 29+ | 39.05 грн |
| 79+ | 36.86 грн |
| WMB120P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB128N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.26 грн |
| 10+ | 73.63 грн |
| 16+ | 58.59 грн |
| 44+ | 55.42 грн |
| WMB128N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 102.31 грн |
| 10+ | 91.75 грн |
| 16+ | 70.30 грн |
| 44+ | 66.50 грн |
| 6000+ | 64.60 грн |
| WMB129N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.91 грн |
| 10+ | 61.52 грн |
| 20+ | 48.14 грн |
| 54+ | 45.44 грн |
| WMB129N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 92 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.90 грн |
| 10+ | 76.66 грн |
| 20+ | 57.76 грн |
| 54+ | 54.53 грн |
| 6000+ | 52.73 грн |
| 12000+ | 52.54 грн |
| WMB140DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.71 грн |
| 14+ | 29.45 грн |
| 25+ | 26.44 грн |
| 45+ | 20.82 грн |
| 123+ | 19.71 грн |
| WMB140DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.46 грн |
| 10+ | 36.70 грн |
| 25+ | 31.73 грн |
| 45+ | 24.99 грн |
| 123+ | 23.66 грн |
| 6000+ | 22.80 грн |
| 12000+ | 22.71 грн |
| WMB140NV6LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Gate charge: 14nC
On-state resistance: 14mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Pulsed drain current: 136A
Case: PDFN5060-8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Gate charge: 14nC
On-state resistance: 14mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Pulsed drain current: 136A
Case: PDFN5060-8
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.34 грн |
| 19+ | 21.06 грн |
| 25+ | 17.18 грн |
| 69+ | 13.54 грн |
| 188+ | 12.83 грн |
| WMB140NV6LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Gate charge: 14nC
On-state resistance: 14mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Pulsed drain current: 136A
Case: PDFN5060-8
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Gate charge: 14nC
On-state resistance: 14mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Pulsed drain current: 136A
Case: PDFN5060-8
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.20 грн |
| 12+ | 26.24 грн |
| 25+ | 20.62 грн |
| 69+ | 16.25 грн |
| 188+ | 15.39 грн |
| 6000+ | 14.82 грн |
| WMB14N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
товару немає в наявності
В кошику
од. на суму грн.
| WMB150N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.19 грн |
| 16+ | 24.94 грн |
| 25+ | 22.41 грн |
| WMB150N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 90 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.23 грн |
| 10+ | 31.08 грн |
| 25+ | 26.89 грн |
| 100+ | 23.85 грн |
| 500+ | 22.14 грн |
| 3000+ | 20.62 грн |
| WMB175DN10LG4 |
Виробник: WAYON
WMB175DN10LG4-CYG Multi channel transistors
WMB175DN10LG4-CYG Multi channel transistors
на замовлення 95 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.86 грн |
| 23+ | 49.02 грн |
| 63+ | 46.36 грн |
| WMB175N10HG4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
на замовлення 1766 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.39 грн |
| 10+ | 39.82 грн |
| 25+ | 23.91 грн |
| 57+ | 16.55 грн |
| 156+ | 15.60 грн |
| WMB175N10HG4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
на замовлення 1766 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.67 грн |
| 10+ | 49.63 грн |
| 25+ | 28.69 грн |
| 57+ | 19.86 грн |
| 156+ | 18.72 грн |
| WMB175N10LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.37 грн |
| 19+ | 21.30 грн |
| 25+ | 19.16 грн |
| 54+ | 17.58 грн |
| 100+ | 16.94 грн |
| 147+ | 16.55 грн |
| 500+ | 15.91 грн |
| WMB175N10LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.04 грн |
| 12+ | 26.54 грн |
| 25+ | 22.99 грн |
| 54+ | 21.09 грн |
| 100+ | 20.33 грн |
| 147+ | 19.86 грн |
| 500+ | 19.10 грн |
| WMB18N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB240P10HG4 |
Виробник: WAYON
WMB240P10HG4-CYG SMD P channel transistors
WMB240P10HG4-CYG SMD P channel transistors
на замовлення 89 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.22 грн |
| 18+ | 63.65 грн |
| 49+ | 59.85 грн |
| WMB26DN06TS |
Виробник: WAYON
WMB26DN06TS-CYG Multi channel transistors
WMB26DN06TS-CYG Multi channel transistors
на замовлення 490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 51.36 грн |
| 59+ | 19.10 грн |
| 162+ | 17.96 грн |


