Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WM06N03LE | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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WM06N03ME | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.3nC |
на замовлення 2999 шт: термін постачання 21-30 дні (днів) |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4nC Pulsed drain current: 13.2A |
на замовлення 2888 шт: термін постачання 21-30 дні (днів) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC |
на замовлення 2978 шт: термін постачання 21-30 дні (днів) |
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WM10P20M2 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2A Pulsed drain current: -8A Power dissipation: 2.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC |
на замовлення 2998 шт: термін постачання 21-30 дні (днів) |
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WM4C62160A | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: CSP1515-4 Mounting: SMD Kind of package: reel Semiconductor structure: common drain On-state resistance: 19.5mΩ Version: ESD Gate charge: 13nC Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 8A |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WM6C61042A | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 8A Power dissipation: 0.45W Case: CSP6 Gate-source voltage: ±10V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel Kind of channel: enhancement Semiconductor structure: common drain Version: ESD |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMAA2N100D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Pulsed drain current: 8A Power dissipation: 60W Case: TO251 Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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WMAA4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMAA4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMAA4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMAA6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB010N04LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W Mounting: SMD Drain-source voltage: 40V Drain current: 268A On-state resistance: 1mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: reel; tape Gate charge: 118nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1072A Case: PDFN5060-8 |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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WMB014N04LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 165A Pulsed drain current: 660A Power dissipation: 62.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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WMB014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB014N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 143.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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WMB017N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 63.3A Pulsed drain current: 400A Power dissipation: 30.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhancement |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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WMB020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Pulsed drain current: 500A Power dissipation: 50W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Gate charge: 29.5nC Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 174A Pulsed drain current: 696A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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WMB023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 251A Power dissipation: 49W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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WMB027N08HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 195A Pulsed drain current: 780A Power dissipation: 192.3W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 77.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB02DN10T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 6.94W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB034N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 72.5nC Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB034N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 73.5nC Kind of channel: enhancement |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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WMB037N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 544A Power dissipation: 142W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 79.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB03DN06T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 6.94W Case: PDFN5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 6A On-state resistance: 0.11Ω Gate charge: 5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 24A |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 121A Power dissipation: 28W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
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WMB043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Case: PDFN5060-8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 120A On-state resistance: 4.5mΩ Type of transistor: N-MOSFET Power dissipation: 131.6W Polarisation: unipolar Gate charge: 98.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 480A Mounting: SMD |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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WMB043N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Case: PDFN5060-8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 120A On-state resistance: 4.5mΩ Type of transistor: N-MOSFET Power dissipation: 131.6W Polarisation: unipolar Gate charge: 111.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 480A Mounting: SMD |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB048NV6HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 95A; Idm: 380A; 73.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 95A Pulsed drain current: 380A Power dissipation: 73.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 28.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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WMB049N12HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 66A Pulsed drain current: 420A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 67nC Kind of channel: enhancement |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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WMB060N08HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Pulsed drain current: 328A Power dissipation: 75W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB060N08LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 98A Pulsed drain current: 310A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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WMB060N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 380A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 81.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB060N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 380A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 296A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46.8A Pulsed drain current: 296A Power dissipation: 84W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 30.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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WMB093N15HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 95A Pulsed drain current: 380A Power dissipation: 178.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 37.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB100N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 500A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB100N07TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 100A Pulsed drain current: 400A Power dissipation: 125W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB100P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Pulsed drain current: -400A Power dissipation: 73.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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WMB108N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 108A Pulsed drain current: 432A Power dissipation: 69W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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WMB120P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -120A Pulsed drain current: -480A Power dissipation: 168.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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WMB129N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 129A Pulsed drain current: 402A Power dissipation: 127.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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WMB13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W; PDFN56 Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 31W Case: PDFN56 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Drain-source voltage: 65V Drain current: 32A On-state resistance: 15mΩ Type of transistor: N-MOSFET x2 Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 128A Mounting: SMD Case: PDFN5060-8 |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Drain-source voltage: 65V Drain current: 34A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 27W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 136A Mounting: SMD Case: PDFN5060-8 |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB14N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN56 Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Case: PDFN56 On-state resistance: 390mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB175N10HG4 | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 30ns |
на замовлення 1780 шт: термін постачання 21-30 дні (днів) |
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WMB175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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WMB18N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: PDFN56 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB240P10HG4 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -33A Pulsed drain current: -212A Power dissipation: 147W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 64.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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WMB31430DN | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 56/130A Power dissipation: 24/37.8W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 4.5/1.3mΩ Mounting: SMD Gate charge: 31.1/90nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W Case: PDFN5060-8 Drain-source voltage: 200V Drain current: 40A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 108.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: SMD |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W Case: PDFN5060-8 Drain-source voltage: 30V Drain current: 37A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 41.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 180A Mounting: SMD |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB510N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 112A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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WMB60P03TA | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -240A; 48W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -60A Pulsed drain current: -240A Power dissipation: 48W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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WM06N03LE |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.52 грн |
37+ | 10.40 грн |
81+ | 4.74 грн |
193+ | 1.99 грн |
500+ | 1.79 грн |
635+ | 1.40 грн |
1745+ | 1.32 грн |
WM06N03ME |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
42+ | 9.17 грн |
125+ | 3.06 грн |
300+ | 1.28 грн |
500+ | 1.15 грн |
987+ | 0.90 грн |
WM10N20M |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.52 грн |
46+ | 8.41 грн |
106+ | 3.61 грн |
152+ | 2.53 грн |
497+ | 1.84 грн |
1366+ | 1.74 грн |
WM10N33M |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
на замовлення 2888 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.88 грн |
51+ | 7.57 грн |
121+ | 3.18 грн |
135+ | 2.84 грн |
389+ | 2.32 грн |
1069+ | 2.19 грн |
WM10N35M3 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
на замовлення 2978 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.22 грн |
33+ | 11.62 грн |
55+ | 7.03 грн |
100+ | 6.25 грн |
180+ | 5.10 грн |
494+ | 4.82 грн |
WM10P20M2 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.22 грн |
31+ | 12.46 грн |
44+ | 8.79 грн |
100+ | 7.87 грн |
144+ | 6.35 грн |
396+ | 6.04 грн |
WM4C62160A |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 19.5mΩ
Version: ESD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 19.5mΩ
Version: ESD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 8A
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.29 грн |
26+ | 14.83 грн |
32+ | 12.16 грн |
92+ | 9.86 грн |
251+ | 9.33 грн |
WM6C61042A |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
22+ | 18.12 грн |
25+ | 16.44 грн |
69+ | 13.07 грн |
189+ | 12.38 грн |
WMAA2N100D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 238 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.16 грн |
15+ | 26.91 грн |
25+ | 21.56 грн |
71+ | 12.69 грн |
194+ | 12.00 грн |
WMAA4N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
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WMAA4N80D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
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WMAA4N80D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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WMAA6N80D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMB010N04LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 268A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 118nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1072A
Case: PDFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 268A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 118nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1072A
Case: PDFN5060-8
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.86 грн |
10+ | 57.41 грн |
20+ | 47.09 грн |
WMB014N04LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.75 грн |
10+ | 47.47 грн |
24+ | 38.61 грн |
64+ | 36.47 грн |
WMB014N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB014N06LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 88 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.39 грн |
10+ | 55.81 грн |
20+ | 45.49 грн |
55+ | 43.04 грн |
WMB017N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
на замовлення 84 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.57 грн |
10+ | 46.25 грн |
25+ | 43.73 грн |
26+ | 35.70 грн |
70+ | 33.79 грн |
WMB020N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.04 грн |
12+ | 31.96 грн |
25+ | 28.74 грн |
39+ | 23.24 грн |
WMB020N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.69 грн |
10+ | 58.79 грн |
19+ | 47.93 грн |
52+ | 45.33 грн |
WMB023N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.40 грн |
12+ | 32.18 грн |
25+ | 28.97 грн |
39+ | 23.55 грн |
105+ | 22.25 грн |
WMB027N08HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB02DN10T1 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.99 грн |
21+ | 18.58 грн |
25+ | 15.52 грн |
75+ | 11.93 грн |
206+ | 11.24 грн |
WMB034N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.92 грн |
10+ | 49.08 грн |
23+ | 40.06 грн |
62+ | 37.92 грн |
WMB034N06LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.92 грн |
10+ | 49.08 грн |
23+ | 40.06 грн |
WMB037N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB03DN06T1 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 6.94W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 0.11Ω
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 24A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 6.94W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 0.11Ω
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 24A
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.99 грн |
21+ | 18.88 грн |
25+ | 15.75 грн |
75+ | 12.08 грн |
206+ | 11.39 грн |
WMB040N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
на замовлення 498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.93 грн |
21+ | 18.50 грн |
25+ | 16.67 грн |
67+ | 13.61 грн |
183+ | 12.84 грн |
WMB043N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 98.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 98.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
на замовлення 95 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.69 грн |
10+ | 58.10 грн |
20+ | 47.09 грн |
53+ | 44.57 грн |
WMB043N10LGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.69 грн |
10+ | 58.10 грн |
20+ | 47.09 грн |
53+ | 44.57 грн |
WMB048NV6HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 95A; Idm: 380A; 73.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 95A; Idm: 380A; 73.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 88 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.22 грн |
13+ | 31.73 грн |
25+ | 29.97 грн |
37+ | 24.23 грн |
WMB049N12HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 112.79 грн |
10+ | 99.38 грн |
12+ | 80.27 грн |
31+ | 75.68 грн |
WMB050N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.93 грн |
25+ | 15.29 грн |
31+ | 12.69 грн |
88+ | 10.32 грн |
241+ | 9.71 грн |
WMB060N08HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 328A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 328A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
WMB060N08LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 87 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.39 грн |
10+ | 45.49 грн |
25+ | 43.12 грн |
26+ | 34.71 грн |
71+ | 32.80 грн |
WMB060N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.75 грн |
10+ | 49.39 грн |
23+ | 39.98 грн |
62+ | 37.84 грн |
WMB060N10LGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.04 грн |
10+ | 51.68 грн |
23+ | 40.29 грн |
61+ | 38.07 грн |
WMB080N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.22 грн |
10+ | 42.73 грн |
25+ | 40.29 грн |
28+ | 32.57 грн |
76+ | 30.81 грн |
WMB080N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.04 грн |
12+ | 31.96 грн |
25+ | 28.74 грн |
39+ | 23.16 грн |
WMB093N15HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 178.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 178.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
WMB100N04TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.46 грн |
16+ | 25.08 грн |
25+ | 22.48 грн |
50+ | 18.19 грн |
WMB100N07TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
WMB100P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.10 грн |
12+ | 33.48 грн |
WMB108N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.93 грн |
21+ | 18.42 грн |
25+ | 16.59 грн |
67+ | 13.61 грн |
183+ | 12.84 грн |
WMB120P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 84 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 61.92 грн |
19+ | 48.16 грн |
51+ | 45.87 грн |
WMB129N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.04 грн |
10+ | 56.80 грн |
20+ | 46.33 грн |
54+ | 43.81 грн |
WMB13N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W; PDFN56
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31W
Case: PDFN56
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W; PDFN56
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31W
Case: PDFN56
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
WMB140DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Drain-source voltage: 65V
Drain current: 32A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 128A
Mounting: SMD
Case: PDFN5060-8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Drain-source voltage: 65V
Drain current: 32A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 128A
Mounting: SMD
Case: PDFN5060-8
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.40 грн |
14+ | 27.52 грн |
25+ | 24.69 грн |
45+ | 20.11 грн |
124+ | 18.96 грн |
WMB140NV6LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Drain-source voltage: 65V
Drain current: 34A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 136A
Mounting: SMD
Case: PDFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Drain-source voltage: 65V
Drain current: 34A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 136A
Mounting: SMD
Case: PDFN5060-8
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.99 грн |
20+ | 19.88 грн |
25+ | 16.36 грн |
69+ | 13.23 грн |
188+ | 12.46 грн |
WMB14N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN56
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN56
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN56
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN56
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMB150N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.46 грн |
16+ | 24.46 грн |
25+ | 22.02 грн |
51+ | 17.97 грн |
WMB175N10HG4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
на замовлення 1780 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
11+ | 35.24 грн |
25+ | 21.18 грн |
57+ | 15.98 грн |
156+ | 15.14 грн |
WMB175N10LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.69 грн |
18+ | 21.25 грн |
25+ | 19.11 грн |
54+ | 16.97 грн |
147+ | 16.05 грн |
500+ | 15.67 грн |
WMB18N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN56
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN56
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
WMB240P10HG4 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 61.16 грн |
18+ | 50.15 грн |
50+ | 47.40 грн |
WMB31430DN |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
товару немає в наявності
В кошику
од. на суму грн.
WMB340N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Case: PDFN5060-8
Drain-source voltage: 200V
Drain current: 40A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 108.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Case: PDFN5060-8
Drain-source voltage: 200V
Drain current: 40A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 108.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.55 грн |
10+ | 93.27 грн |
27+ | 87.92 грн |
WMB46N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Case: PDFN5060-8
Drain-source voltage: 30V
Drain current: 37A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Case: PDFN5060-8
Drain-source voltage: 30V
Drain current: 37A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: SMD
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
28+ | 14.07 грн |
33+ | 11.77 грн |
100+ | 9.02 грн |
274+ | 8.49 грн |
WMB510N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.39 грн |
10+ | 42.35 грн |
25+ | 39.98 грн |
28+ | 32.57 грн |
76+ | 30.73 грн |
WMB60P03TA |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -240A; 48W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 48W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -240A; 48W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 48W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 470 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.93 грн |
15+ | 25.99 грн |
25+ | 23.39 грн |
49+ | 18.35 грн |
134+ | 17.35 грн |