| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMB020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Pulsed drain current: 500A Power dissipation: 50W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Gate charge: 29.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 174A Pulsed drain current: 696A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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WMB020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 174A Pulsed drain current: 696A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 14-21 дні (днів) |
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WMB023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 251A Power dissipation: 49W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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WMB023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 251A Power dissipation: 49W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 198 шт: термін постачання 14-21 дні (днів) |
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WMB025N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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WMB025N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 96 шт: термін постачання 14-21 дні (днів) |
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WMB025N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB025N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB027N08HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 195A Pulsed drain current: 780A Power dissipation: 192.3W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 77.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB02DN10T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 6.94W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB02DN10T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 6.94W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB034N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 72.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB034N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 72.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB034N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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WMB034N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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WMB037N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 544A Power dissipation: 142W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 79.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMB03DN06T1 | WAYON | WMB03DN06T1-CYG Multi channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 121A Power dissipation: 28W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 478 шт: термін постачання 21-30 дні (днів) |
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WMB040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 121A Power dissipation: 28W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 478 шт: термін постачання 14-21 дні (днів) |
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WMB040N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Pulsed drain current: 520A Power dissipation: 122.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 78.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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WMB040N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Pulsed drain current: 520A Power dissipation: 122.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 78.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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WMB042DN03LG2 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 45/50A Power dissipation: 26/27.1W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 5.5/4.2mΩ Mounting: SMD Gate charge: 8.8/15nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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WMB042DN03LG2 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 45/50A Power dissipation: 26/27.1W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 5.5/4.2mΩ Mounting: SMD Gate charge: 8.8/15nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric кількість в упаковці: 1 шт |
на замовлення 99 шт: термін постачання 14-21 дні (днів) |
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WMB043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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WMB043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 85 шт: термін постачання 14-21 дні (днів) |
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WMB043N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 111.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB043N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 111.2nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB048NV6HG4 | WAYON | WMB048NV6HG4-CYG SMD N channel transistors |
на замовлення 86 шт: термін постачання 14-21 дні (днів) |
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| WMB048NV6LG4 | WAYON | WMB048NV6LG4-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB049N12HG2 | WAYON | WMB049N12HG2-CYG SMD N channel transistors |
на замовлення 62 шт: термін постачання 14-21 дні (днів) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 242 шт: термін постачання 14-21 дні (днів) |
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| WMB060N08LG2 | WAYON | WMB060N08LG2-CYG SMD N channel transistors |
на замовлення 87 шт: термін постачання 14-21 дні (днів) |
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| WMB060N10HGS | WAYON | WMB060N10HGS-CYG SMD N channel transistors |
на замовлення 97 шт: термін постачання 14-21 дні (днів) |
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| WMB060N10LGS | WAYON | WMB060N10LGS-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB072N12HG2 | WAYON | WMB072N12HG2-CYG SMD N channel transistors |
на замовлення 54 шт: термін постачання 14-21 дні (днів) |
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| WMB072N12LG2-S | WAYON | WMB072N12LG2-S-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.5A Pulsed drain current: 168A Power dissipation: 30.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.5A Pulsed drain current: 168A Power dissipation: 30.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 296A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 296A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46.8A Pulsed drain current: 296A Power dissipation: 84W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 30.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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WMB080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46.8A Pulsed drain current: 296A Power dissipation: 84W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 30.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
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| WMB090DN04LG2 | WAYON | WMB090DN04LG2-CYG Multi channel transistors |
на замовлення 497 шт: термін постачання 14-21 дні (днів) |
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WMB090DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W Polarisation: unipolar Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Pulsed drain current: 160A Drain current: 40A Drain-source voltage: 65V Gate charge: 22.1nC On-state resistance: 10.5mΩ Power dissipation: 27.8W Gate-source voltage: ±20V Kind of package: reel; tape |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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WMB090DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W Polarisation: unipolar Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Pulsed drain current: 160A Drain current: 40A Drain-source voltage: 65V Gate charge: 22.1nC On-state resistance: 10.5mΩ Power dissipation: 27.8W Gate-source voltage: ±20V Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 99 шт: термін постачання 14-21 дні (днів) |
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WMB090N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Pulsed drain current: 200A Power dissipation: 32.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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WMB090N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Pulsed drain current: 200A Power dissipation: 32.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 211 шт: термін постачання 14-21 дні (днів) |
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| WMB090NV6LG4 | WAYON | WMB090NV6LG4-CYG SMD N channel transistors |
на замовлення 365 шт: термін постачання 14-21 дні (днів) |
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WMB093N15HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W Case: PDFN5060-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 37.2nC On-state resistance: 9.3mΩ Drain current: 95A Pulsed drain current: 380A Gate-source voltage: ±20V Power dissipation: 178.5W Drain-source voltage: 150V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMB098N03LG2 | WAYON | WMB098N03LG2-CYG SMD N channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| WMB099N10HGS | WAYON | WMB099N10HGS-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB099N10LG2 | WAYON | WMB099N10LG2-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB099N10LGS | WAYON | WMB099N10LGS-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMB100N04TS | WAYON | WMB100N04TS-CYG SMD N channel transistors |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB100N07TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 100A Pulsed drain current: 400A Power dissipation: 125W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB100P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Pulsed drain current: -400A Power dissipation: 73.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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WMB100P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Pulsed drain current: -400A Power dissipation: 73.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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WMB108N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 108A Pulsed drain current: 432A Power dissipation: 69W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 270 шт: термін постачання 21-30 дні (днів) |
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| WMB020N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 61.83 грн |
| 10+ | 40.64 грн |
| 25+ | 35.21 грн |
| 100+ | 31.19 грн |
| 500+ | 28.90 грн |
| 3000+ | 26.98 грн |
| WMB020N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.55 грн |
| 10+ | 55.82 грн |
| 25+ | 49.44 грн |
| WMB020N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.25 грн |
| 10+ | 69.56 грн |
| 25+ | 59.33 грн |
| 100+ | 55.02 грн |
| WMB023N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.66 грн |
| 13+ | 32.93 грн |
| 25+ | 29.66 грн |
| 100+ | 26.15 грн |
| WMB023N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 198 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.80 грн |
| 10+ | 41.04 грн |
| 25+ | 35.60 грн |
| 100+ | 31.39 грн |
| 500+ | 29.28 грн |
| 3000+ | 27.37 грн |
| WMB025N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.55 грн |
| 10+ | 55.58 грн |
| 25+ | 49.28 грн |
| WMB025N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 96 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.25 грн |
| 10+ | 69.26 грн |
| 25+ | 59.13 грн |
| 100+ | 54.73 грн |
| 500+ | 53.01 грн |
| 3000+ | 51.19 грн |
| WMB025N06LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.55 грн |
| 10+ | 55.58 грн |
| 25+ | 49.28 грн |
| WMB025N06LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.25 грн |
| 10+ | 69.26 грн |
| 25+ | 59.13 грн |
| 100+ | 54.73 грн |
| 500+ | 53.01 грн |
| 3000+ | 51.19 грн |
| WMB027N08HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB02DN10T1 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.08 грн |
| 22+ | 18.82 грн |
| 26+ | 15.79 грн |
| 100+ | 14.83 грн |
| 500+ | 13.08 грн |
| WMB02DN10T1 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.49 грн |
| 13+ | 23.45 грн |
| 25+ | 18.95 грн |
| 100+ | 17.80 грн |
| 500+ | 15.69 грн |
| 3000+ | 14.16 грн |
| 6000+ | 13.68 грн |
| WMB034N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.55 грн |
| 10+ | 50.55 грн |
| 25+ | 44.81 грн |
| WMB034N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.25 грн |
| 10+ | 63.00 грн |
| 25+ | 53.78 грн |
| 100+ | 49.76 грн |
| 500+ | 48.13 грн |
| 3000+ | 46.50 грн |
| WMB034N06LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.55 грн |
| 10+ | 50.71 грн |
| 25+ | 44.97 грн |
| WMB034N06LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.25 грн |
| 10+ | 63.20 грн |
| 25+ | 53.97 грн |
| 100+ | 50.04 грн |
| 500+ | 48.42 грн |
| 3000+ | 46.69 грн |
| WMB037N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB03DN06T1 |
Виробник: WAYON
WMB03DN06T1-CYG Multi channel transistors
WMB03DN06T1-CYG Multi channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.40 грн |
| 75+ | 15.12 грн |
| 206+ | 14.26 грн |
| WMB040N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.35 грн |
| 22+ | 18.90 грн |
| 25+ | 16.98 грн |
| 100+ | 14.99 грн |
| WMB040N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 478 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.22 грн |
| 13+ | 23.55 грн |
| 25+ | 20.38 грн |
| 100+ | 17.99 грн |
| 500+ | 16.75 грн |
| 3000+ | 15.69 грн |
| WMB040N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.57 грн |
| 10+ | 66.18 грн |
| 25+ | 59.01 грн |
| WMB040N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.68 грн |
| 10+ | 82.47 грн |
| 25+ | 70.81 грн |
| 100+ | 65.07 грн |
| 500+ | 63.15 грн |
| 3000+ | 61.24 грн |
| WMB042DN03LG2 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45/50A
Power dissipation: 26/27.1W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 5.5/4.2mΩ
Mounting: SMD
Gate charge: 8.8/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45/50A
Power dissipation: 26/27.1W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 5.5/4.2mΩ
Mounting: SMD
Gate charge: 8.8/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.12 грн |
| 10+ | 49.28 грн |
| 25+ | 46.57 грн |
| WMB042DN03LG2 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45/50A
Power dissipation: 26/27.1W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 5.5/4.2mΩ
Mounting: SMD
Gate charge: 8.8/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45/50A
Power dissipation: 26/27.1W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 5.5/4.2mΩ
Mounting: SMD
Gate charge: 8.8/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
кількість в упаковці: 1 шт
на замовлення 99 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.35 грн |
| 10+ | 61.41 грн |
| 25+ | 55.88 грн |
| 100+ | 49.47 грн |
| 500+ | 45.93 грн |
| 3000+ | 42.87 грн |
| WMB043N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.98 грн |
| 10+ | 59.17 грн |
| 25+ | 52.47 грн |
| WMB043N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 85 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.38 грн |
| 10+ | 73.73 грн |
| 25+ | 62.96 грн |
| 100+ | 58.37 грн |
| 500+ | 56.45 грн |
| 3000+ | 54.54 грн |
| WMB043N10LGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.98 грн |
| 10+ | 59.17 грн |
| 25+ | 52.47 грн |
| 100+ | 48.64 грн |
| WMB043N10LGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.38 грн |
| 10+ | 73.73 грн |
| 25+ | 62.96 грн |
| 100+ | 58.37 грн |
| 500+ | 56.45 грн |
| 3000+ | 54.54 грн |
| WMB048NV6HG4 |
Виробник: WAYON
WMB048NV6HG4-CYG SMD N channel transistors
WMB048NV6HG4-CYG SMD N channel transistors
на замовлення 86 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.42 грн |
| 37+ | 30.72 грн |
| 102+ | 28.99 грн |
| WMB048NV6LG4 |
Виробник: WAYON
WMB048NV6LG4-CYG SMD N channel transistors
WMB048NV6LG4-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.45 грн |
| 40+ | 28.23 грн |
| 110+ | 26.70 грн |
| WMB049N12HG2 |
Виробник: WAYON
WMB049N12HG2-CYG SMD N channel transistors
WMB049N12HG2-CYG SMD N channel transistors
на замовлення 62 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 157.66 грн |
| 11+ | 102.38 грн |
| 31+ | 96.64 грн |
| WMB050N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.49 грн |
| 26+ | 15.71 грн |
| 31+ | 13.00 грн |
| 100+ | 11.40 грн |
| WMB050N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 242 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.19 грн |
| 16+ | 19.58 грн |
| 25+ | 15.60 грн |
| 100+ | 13.68 грн |
| 500+ | 12.73 грн |
| 3000+ | 11.87 грн |
| WMB060N08LG2 |
Виробник: WAYON
WMB060N08LG2-CYG SMD N channel transistors
WMB060N08LG2-CYG SMD N channel transistors
на замовлення 87 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.72 грн |
| 26+ | 44.21 грн |
| 71+ | 41.81 грн |
| WMB060N10HGS |
Виробник: WAYON
WMB060N10HGS-CYG SMD N channel transistors
WMB060N10HGS-CYG SMD N channel transistors
на замовлення 97 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.97 грн |
| 23+ | 51.19 грн |
| 61+ | 48.42 грн |
| WMB060N10LGS |
Виробник: WAYON
WMB060N10LGS-CYG SMD N channel transistors
WMB060N10LGS-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.69 грн |
| 22+ | 51.67 грн |
| 61+ | 48.90 грн |
| WMB072N12HG2 |
Виробник: WAYON
WMB072N12HG2-CYG SMD N channel transistors
WMB072N12HG2-CYG SMD N channel transistors
на замовлення 54 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.50 грн |
| 15+ | 76.55 грн |
| 41+ | 72.72 грн |
| WMB072N12LG2-S |
Виробник: WAYON
WMB072N12LG2-S-CYG SMD N channel transistors
WMB072N12LG2-S-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.92 грн |
| 18+ | 64.11 грн |
| 49+ | 60.28 грн |
| WMB080N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.49 грн |
| 28+ | 14.75 грн |
| 33+ | 12.28 грн |
| 100+ | 11.64 грн |
| 500+ | 10.29 грн |
| WMB080N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.19 грн |
| 17+ | 18.38 грн |
| 25+ | 14.74 грн |
| 100+ | 13.97 грн |
| 500+ | 12.34 грн |
| 3000+ | 11.10 грн |
| 6000+ | 10.81 грн |
| WMB080N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.12 грн |
| 10+ | 43.54 грн |
| 25+ | 41.14 грн |
| WMB080N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.35 грн |
| 10+ | 54.25 грн |
| 25+ | 49.37 грн |
| 100+ | 43.54 грн |
| 500+ | 40.57 грн |
| 3000+ | 37.89 грн |
| WMB080N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.38 грн |
| 13+ | 32.77 грн |
| 25+ | 29.42 грн |
| WMB080N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 51 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.86 грн |
| 10+ | 40.84 грн |
| 25+ | 35.31 грн |
| 100+ | 31.29 грн |
| 500+ | 28.99 грн |
| 3000+ | 27.08 грн |
| WMB090DN04LG2 |
Виробник: WAYON
WMB090DN04LG2-CYG Multi channel transistors
WMB090DN04LG2-CYG Multi channel transistors
на замовлення 497 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.35 грн |
| 58+ | 19.62 грн |
| 159+ | 18.47 грн |
| WMB090DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.70 грн |
| 10+ | 40.51 грн |
| 25+ | 36.44 грн |
| 34+ | 28.47 грн |
| 91+ | 26.87 грн |
| WMB090DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Polarisation: unipolar
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 160A
Drain current: 40A
Drain-source voltage: 65V
Gate charge: 22.1nC
On-state resistance: 10.5mΩ
Power dissipation: 27.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 99 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 82.44 грн |
| 10+ | 50.48 грн |
| 25+ | 43.73 грн |
| 34+ | 34.16 грн |
| 91+ | 32.25 грн |
| 6000+ | 31.10 грн |
| WMB090N04LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.22 грн |
| 21+ | 19.46 грн |
| 25+ | 16.11 грн |
| 100+ | 14.19 грн |
| WMB090N04LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 211 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.46 грн |
| 13+ | 24.25 грн |
| 25+ | 19.33 грн |
| 100+ | 17.03 грн |
| 500+ | 15.69 грн |
| 3000+ | 14.74 грн |
| WMB090NV6LG4 |
Виробник: WAYON
WMB090NV6LG4-CYG SMD N channel transistors
WMB090NV6LG4-CYG SMD N channel transistors
на замовлення 365 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 44.83 грн |
| 69+ | 16.55 грн |
| 188+ | 15.69 грн |
| WMB093N15HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Power dissipation: 178.5W
Drain-source voltage: 150V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Power dissipation: 178.5W
Drain-source voltage: 150V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB098N03LG2 |
Виробник: WAYON
WMB098N03LG2-CYG SMD N channel transistors
WMB098N03LG2-CYG SMD N channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.13 грн |
| 104+ | 10.81 грн |
| 286+ | 10.24 грн |
| WMB099N10HGS |
Виробник: WAYON
WMB099N10HGS-CYG SMD N channel transistors
WMB099N10HGS-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.25 грн |
| 39+ | 29.28 грн |
| 106+ | 27.65 грн |
| WMB099N10LG2 |
Виробник: WAYON
WMB099N10LG2-CYG SMD N channel transistors
WMB099N10LG2-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.53 грн |
| 29+ | 40.09 грн |
| 78+ | 37.89 грн |
| WMB099N10LGS |
Виробник: WAYON
WMB099N10LGS-CYG SMD N channel transistors
WMB099N10LGS-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.25 грн |
| 39+ | 29.28 грн |
| 106+ | 27.65 грн |
| WMB100N04TS |
Виробник: WAYON
WMB100N04TS-CYG SMD N channel transistors
WMB100N04TS-CYG SMD N channel transistors
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.69 грн |
| 50+ | 22.77 грн |
| 137+ | 21.53 грн |
| WMB100N07TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB100P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.87 грн |
| WMB100P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.16 грн |
| 10+ | 42.63 грн |
| 25+ | 36.93 грн |
| 100+ | 32.72 грн |
| 500+ | 30.33 грн |
| 3000+ | 28.32 грн |
| WMB108N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.35 грн |
| 22+ | 18.90 грн |
| 25+ | 16.90 грн |
| 100+ | 14.99 грн |

