| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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WMB027N08HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 195A Pulsed drain current: 780A Power dissipation: 192.3W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 77.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMB034N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 72.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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WMB034N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 27 шт: термін постачання 14-30 дні (днів) |
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WMB037N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 544A Power dissipation: 142W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 79.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMB040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 121A Power dissipation: 28W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 428 шт: термін постачання 14-30 дні (днів) |
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WMB040N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Pulsed drain current: 520A Power dissipation: 122.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 78.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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WMB043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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WMB043N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 111.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 232 шт: термін постачання 14-30 дні (днів) |
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| WMB060N08HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Pulsed drain current: 328A Power dissipation: 75W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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WMB060N08LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 98A Pulsed drain current: 310A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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WMB080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.5A Pulsed drain current: 168A Power dissipation: 30.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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WMB080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 296A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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WMB080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46.8A Pulsed drain current: 296A Power dissipation: 84W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 30.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 51 шт: термін постачання 14-30 дні (днів) |
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WMB090DN04LG2 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 28.5A Pulsed drain current: 180A Power dissipation: 31.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 497 шт: термін постачання 14-30 дні (днів) |
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WMB090NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 45A Pulsed drain current: 180A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 193 шт: термін постачання 14-30 дні (днів) |
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WMB100N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8 Power dissipation: 96W Mounting: SMD Case: PDFN5060-8 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 500A Drain current: 79A Drain-source voltage: 40V Gate charge: 95nC On-state resistance: 4.6mΩ Gate-source voltage: ±20V Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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WMB100N07TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W Power dissipation: 125W Mounting: SMD Case: PDFN5060-8 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 400A Drain current: 100A Drain-source voltage: 70V Gate charge: 92nC On-state resistance: 7.4mΩ Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMB100P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Pulsed drain current: -400A Power dissipation: 73.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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WMB108N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 108A Pulsed drain current: 432A Power dissipation: 69W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 270 шт: термін постачання 14-30 дні (днів) |
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WMB115N15HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 75A; Idm: 300A; 125W Drain-source voltage: 150V Drain current: 75A On-state resistance: 11.5mΩ Pulsed drain current: 300A Power dissipation: 125W Gate-source voltage: ±20V Mounting: SMD Polarisation: unipolar Gate charge: 45nC Kind of channel: enhancement Case: PDFN5060-8 Type of transistor: N-MOSFET Kind of package: reel; tape |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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WMB120P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -120A Pulsed drain current: -480A Power dissipation: 168.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMB129N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 129A Pulsed drain current: 402A Power dissipation: 127.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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| WMB13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 31W Case: PDFN5060-8 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 32A Pulsed drain current: 128A Power dissipation: 25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 34A Pulsed drain current: 136A Power dissipation: 27W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMB14N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8 Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Case: PDFN5060-8 On-state resistance: 390mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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WMB175N10HG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns Pulsed drain current: 184A Power dissipation: 71.4W Gate charge: 17nC Polarisation: unipolar Drain current: 29A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN5060-8 On-state resistance: 17.5mΩ Reverse recovery time: 30ns Mounting: SMD |
на замовлення 1766 шт: термін постачання 14-30 дні (днів) |
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WMB175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 184A Gate charge: 22.7nC |
на замовлення 3443 шт: термін постачання 14-30 дні (днів) |
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| WMB18N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: PDFN5060-8 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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WMB240P10HG4 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -33A Pulsed drain current: -212A Power dissipation: 147W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 64.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMB26N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Pulsed drain current: 104A Power dissipation: 43.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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WMB31430DN | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 56/130A Power dissipation: 24/37.8W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 4.5/1.3mΩ Mounting: SMD Gate charge: 31.1/90nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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WMB340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 40A Pulsed drain current: 160A Power dissipation: 108.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 74 шт: термін постачання 14-30 дні (днів) |
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WMB35P04T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; PDFN5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 220 шт: термін постачання 14-30 дні (днів) |
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| WMB40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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WMB46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 37A Pulsed drain current: 180A Power dissipation: 41.7W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 475 шт: термін постачання 14-30 дні (днів) |
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| WMB50N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 90W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 138ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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WMB50P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 39W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 478 шт: термін постачання 14-30 дні (днів) |
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WMB52N03T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 33A; Idm: 125A; 27W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 33A Pulsed drain current: 125A Power dissipation: 27W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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WMB56N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W Power dissipation: 35.7W Mounting: SMD Case: PDFN5060-8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 36nC On-state resistance: 7.2mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 224A |
на замовлення 463 шт: термін постачання 14-30 дні (днів) |
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WMB60P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -240A Power dissipation: 41.9W Case: PDFN5060-8 Gate-source voltage: ±10V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 486 шт: термін постачання 14-30 дні (днів) |
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WMB81N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 81A Pulsed drain current: 324A Power dissipation: 59W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 498 шт: термін постачання 14-30 дні (днів) |
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| WMB85N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 240A Power dissipation: 180W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 160ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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WMB90N02TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 90A Pulsed drain current: 360A Power dissipation: 47W Case: PDFN5060-8 Gate-source voltage: ±10V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 370 шт: термін постачання 14-30 дні (днів) |
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WMB90P03TS | WAYON |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -90A Pulsed drain current: -360A Power dissipation: 60W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 146nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 267 шт: термін постачання 14-30 дні (днів) |
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WMF04N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 4.6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF04N70C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 4.6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 4.6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF05N65MM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W Type of transistor: N-MOSFET Technology: WMOS™ MM Polarisation: unipolar Drain-source voltage: 650V Case: SOT223 On-state resistance: 1.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 8.8A Power dissipation: 5W Gate charge: 5.3nC Drain current: 3.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF06N80M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Case: SOT223 On-state resistance: 2.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF06N90C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 900V Case: SOT223 On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF07N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 42W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF07N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 Type of transistor: N-MOSFET Technology: SJMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2045 шт: термін постачання 14-30 дні (днів) |
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WMF08N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF08N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF09N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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WMF09N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WMF10N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 325 шт: термін постачання 14-30 дні (днів) |
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WMF10N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 9.6nC |
товару немає в наявності |
В кошику од. на суму грн. |
| WMB027N08HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB034N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.04 грн |
| 10+ | 55.07 грн |
| 25+ | 48.82 грн |
| WMB034N06LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.04 грн |
| 10+ | 55.24 грн |
| 25+ | 48.99 грн |
| WMB037N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB040N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 428 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.38 грн |
| 21+ | 20.69 грн |
| 25+ | 18.58 грн |
| 100+ | 16.47 грн |
| WMB040N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.77 грн |
| 10+ | 71.79 грн |
| 25+ | 64.19 грн |
| WMB043N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.86 грн |
| 10+ | 63.43 грн |
| WMB043N10LGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.86 грн |
| 10+ | 63.43 грн |
| 25+ | 56.17 грн |
| WMB050N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.47 грн |
| 26+ | 16.64 грн |
| 31+ | 13.77 грн |
| 100+ | 12.08 грн |
| WMB060N08HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 328A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 328A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB060N08LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.04 грн |
| 10+ | 49.75 грн |
| 25+ | 47.21 грн |
| WMB080N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.47 грн |
| 27+ | 15.79 грн |
| 33+ | 13.18 грн |
| 100+ | 12.42 грн |
| 500+ | 10.98 грн |
| WMB080N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.95 грн |
| 10+ | 47.38 грн |
| 25+ | 44.76 грн |
| WMB080N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.49 грн |
| 13+ | 34.97 грн |
| 25+ | 31.42 грн |
| WMB090DN04LG2 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 497 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.75 грн |
| 18+ | 23.65 грн |
| 25+ | 21.37 грн |
| 100+ | 18.84 грн |
| WMB090NV6LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.38 грн |
| 22+ | 19.68 грн |
| 25+ | 17.74 грн |
| 100+ | 15.63 грн |
| WMB100N04TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Power dissipation: 96W
Mounting: SMD
Case: PDFN5060-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 500A
Drain current: 79A
Drain-source voltage: 40V
Gate charge: 95nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Power dissipation: 96W
Mounting: SMD
Case: PDFN5060-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 500A
Drain current: 79A
Drain-source voltage: 40V
Gate charge: 95nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 50.03 грн |
| 16+ | 27.28 грн |
| 25+ | 24.66 грн |
| WMB100N07TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Power dissipation: 125W
Mounting: SMD
Case: PDFN5060-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 100A
Drain-source voltage: 70V
Gate charge: 92nC
On-state resistance: 7.4mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Power dissipation: 125W
Mounting: SMD
Case: PDFN5060-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 100A
Drain-source voltage: 70V
Gate charge: 92nC
On-state resistance: 7.4mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB100P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 454.80 грн |
| WMB108N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 270 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.29 грн |
| 21+ | 20.78 грн |
| 25+ | 18.75 грн |
| 100+ | 16.55 грн |
| WMB115N15HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75A; Idm: 300A; 125W
Drain-source voltage: 150V
Drain current: 75A
On-state resistance: 11.5mΩ
Pulsed drain current: 300A
Power dissipation: 125W
Gate-source voltage: ±20V
Mounting: SMD
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhancement
Case: PDFN5060-8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75A; Idm: 300A; 125W
Drain-source voltage: 150V
Drain current: 75A
On-state resistance: 11.5mΩ
Pulsed drain current: 300A
Power dissipation: 125W
Gate-source voltage: ±20V
Mounting: SMD
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhancement
Case: PDFN5060-8
Type of transistor: N-MOSFET
Kind of package: reel; tape
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.77 грн |
| 10+ | 71.79 грн |
| 25+ | 65.04 грн |
| WMB120P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB129N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.95 грн |
| 10+ | 62.84 грн |
| 25+ | 55.66 грн |
| WMB13N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB140DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.58 грн |
| 14+ | 30.24 грн |
| 25+ | 27.20 грн |
| 100+ | 24.16 грн |
| 500+ | 22.30 грн |
| WMB140NV6LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.39 грн |
| 20+ | 21.96 грн |
| 25+ | 17.99 грн |
| 100+ | 15.96 грн |
| 500+ | 14.78 грн |
| WMB14N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB150N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.21 грн |
| 16+ | 26.52 грн |
| 25+ | 23.82 грн |
| WMB175N10HG4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Pulsed drain current: 184A
Power dissipation: 71.4W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 17.5mΩ
Reverse recovery time: 30ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Pulsed drain current: 184A
Power dissipation: 71.4W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 17.5mΩ
Reverse recovery time: 30ns
Mounting: SMD
на замовлення 1766 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.94 грн |
| 11+ | 39.44 грн |
| 25+ | 23.65 грн |
| 100+ | 21.28 грн |
| 250+ | 19.68 грн |
| 500+ | 18.84 грн |
| 1000+ | 16.89 грн |
| WMB175N10LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 184A
Gate charge: 22.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 184A
Gate charge: 22.7nC
на замовлення 3443 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.75 грн |
| 18+ | 23.73 грн |
| 25+ | 21.45 грн |
| 100+ | 18.84 грн |
| 500+ | 17.48 грн |
| 3000+ | 16.55 грн |
| WMB18N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WMB240P10HG4 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WMB26N06TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 43.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 43.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.38 грн |
| 29+ | 14.87 грн |
| 35+ | 12.42 грн |
| 100+ | 11.74 грн |
| 500+ | 10.39 грн |
| WMB31430DN |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.41 грн |
| 10+ | 75.17 грн |
| 25+ | 67.57 грн |
| 100+ | 62.50 грн |
| WMB340N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 142.81 грн |
| 10+ | 125.00 грн |
| 25+ | 110.65 грн |
| WMB35P04T1 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; PDFN5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; PDFN5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 220 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.56 грн |
| 23+ | 19.17 грн |
| 25+ | 17.23 грн |
| 100+ | 15.29 грн |
| WMB40N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| WMB46N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 475 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.56 грн |
| 28+ | 15.37 грн |
| 33+ | 12.92 грн |
| 100+ | 12.16 грн |
| WMB50N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| WMB50P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 478 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.29 грн |
| 22+ | 20.10 грн |
| 26+ | 16.47 грн |
| 100+ | 14.61 грн |
| WMB52N03T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; Idm: 125A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Pulsed drain current: 125A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; Idm: 125A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Pulsed drain current: 125A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.66 грн |
| 21+ | 20.61 грн |
| 25+ | 17.06 грн |
| 100+ | 15.03 грн |
| 500+ | 13.94 грн |
| WMB56N04T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Power dissipation: 35.7W
Mounting: SMD
Case: PDFN5060-8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Power dissipation: 35.7W
Mounting: SMD
Case: PDFN5060-8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
на замовлення 463 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.47 грн |
| 23+ | 18.84 грн |
| 28+ | 15.63 грн |
| 100+ | 13.68 грн |
| WMB60P02TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.65 грн |
| 23+ | 18.92 грн |
| 25+ | 17.06 грн |
| 100+ | 15.03 грн |
| WMB81N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 324A
Power dissipation: 59W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 324A
Power dissipation: 59W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 498 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.21 грн |
| 19+ | 22.64 грн |
| 25+ | 18.58 грн |
| 100+ | 16.39 грн |
| WMB85N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| WMB90N02TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 47W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 47W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 370 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.75 грн |
| 23+ | 18.41 грн |
| 26+ | 16.64 грн |
| 100+ | 14.78 грн |
| WMB90P03TS |
![]() |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 60W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 60W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.21 грн |
| 16+ | 26.52 грн |
| 25+ | 23.90 грн |
| 100+ | 21.12 грн |
| WMF04N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMF04N70C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 4.6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 4.6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMF05N65MM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
On-state resistance: 1.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 8.8A
Power dissipation: 5W
Gate charge: 5.3nC
Drain current: 3.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
On-state resistance: 1.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 8.8A
Power dissipation: 5W
Gate charge: 5.3nC
Drain current: 3.2A
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| WMF06N80M3 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Case: SOT223
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Case: SOT223
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| WMF06N90C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| WMF07N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMF07N65C4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2045 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.48 грн |
| 12+ | 38.26 грн |
| 14+ | 32.10 грн |
| 25+ | 28.13 грн |
| 100+ | 26.01 грн |
| 250+ | 25.17 грн |
| 500+ | 23.06 грн |
| 1000+ | 22.72 грн |
| WMF08N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WMF08N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMF09N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| WMF09N65C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMF10N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 325 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.84 грн |
| 12+ | 35.47 грн |
| 15+ | 29.56 грн |
| 25+ | 26.10 грн |
| 100+ | 24.41 грн |
| 250+ | 23.23 грн |
| WMF10N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
товару немає в наявності
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од. на суму грн.







