| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MPR593107FR002 | WAYON |
Category: SMD resistorsDescription: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C Case - inch: 5931 Type of resistor: metal strip Mounting: SMD Kind of resistor: sensing Operating temperature: -55...170°C Height: 0.5mm Resistance: 2mΩ Width: 7.7mm Length: 15mm Tolerance: ±1% Power: 7W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MPR593107FR003 | WAYON |
Category: SMD resistorsDescription: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C Case - inch: 5931 Type of resistor: metal strip Mounting: SMD Kind of resistor: sensing Operating temperature: -55...170°C Height: 0.5mm Resistance: 3mΩ Width: 7.7mm Length: 15mm Tolerance: ±1% Power: 7W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MPR593108F0M50 | WAYON |
Category: SMD resistorsDescription: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C Case - inch: 5931 Type of resistor: metal strip Mounting: SMD Kind of resistor: sensing Operating temperature: -55...170°C Height: 0.5mm Resistance: 0.5mΩ Width: 7.7mm Length: 15mm Tolerance: ±1% Power: 8W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TE P0050150.00j5 | WAYON |
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5 кількість в упаковці: 32 шт |
на замовлення 210 шт: термін постачання 28-31 дні (днів) |
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| WM01P41M | WAYON | WM01P41M-CYG SMD P channel transistors |
на замовлення 2995 шт: термін постачання 14-21 дні (днів) |
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WM01P60M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6A Pulsed drain current: -20A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 28mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1465 шт: термін постачання 21-30 дні (днів) |
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WM01P60M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6A Pulsed drain current: -20A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 28mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1465 шт: термін постачання 14-21 дні (днів) |
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WM02DH08D | WAYON |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 750/-660mA Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 380/520mΩ Mounting: SMD Gate charge: 1/2.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2857 шт: термін постачання 21-30 дні (днів) |
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WM02DH08D | WAYON |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 750/-660mA Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 380/520mΩ Mounting: SMD Gate charge: 1/2.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD кількість в упаковці: 1 шт |
на замовлення 2857 шт: термін постачання 14-21 дні (днів) |
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WM02DN080C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 15.5mΩ Gate charge: 11nC Drain current: 8A Pulsed drain current: 49A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 489 шт: термін постачання 21-30 дні (днів) |
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WM02DN080C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 15.5mΩ Gate charge: 11nC Drain current: 8A Pulsed drain current: 49A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 489 шт: термін постачання 14-21 дні (днів) |
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WM02DN085C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 10.9mΩ Gate charge: 22.1nC Drain current: 8.5A Pulsed drain current: 56A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WM02DN085C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 10.9mΩ Gate charge: 22.1nC Drain current: 8.5A Pulsed drain current: 56A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WM02DN08D | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.25Ω Gate charge: 1.1nC Drain current: 0.8A Pulsed drain current: 3A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 2589 шт: термін постачання 21-30 дні (днів) |
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WM02DN08D | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.25Ω Gate charge: 1.1nC Drain current: 0.8A Pulsed drain current: 3A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2589 шт: термін постачання 14-21 дні (днів) |
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WM02DN08T | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SOT563 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.25Ω Gate charge: 1.1nC Drain current: 0.8A Pulsed drain current: 3A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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WM02DN08T | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SOT563 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.25Ω Gate charge: 1.1nC Drain current: 0.8A Pulsed drain current: 3A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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WM02DN095C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 9.4mΩ Gate charge: 22nC Drain current: 9.5A Pulsed drain current: 60A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WM02DN095C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 9.4mΩ Gate charge: 22nC Drain current: 9.5A Pulsed drain current: 60A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WM02DN110C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 7.5mΩ Gate charge: 23nC Drain current: 11A Pulsed drain current: 70A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WM02DN110C | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 7.5mΩ Gate charge: 23nC Drain current: 11A Pulsed drain current: 70A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WM02DN48A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.25W Case: SOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 30mΩ Gate charge: 10nC Drain current: 4.8A Pulsed drain current: 30A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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WM02DN48A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.25W Case: SOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 30mΩ Gate charge: 10nC Drain current: 4.8A Pulsed drain current: 30A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2975 шт: термін постачання 14-21 дні (днів) |
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WM02DN50M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 27mΩ Gate charge: 11nC Drain current: 5A Pulsed drain current: 20A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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WM02DN50M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 27mΩ Gate charge: 11nC Drain current: 5A Pulsed drain current: 20A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 2750 шт: термін постачання 14-21 дні (днів) |
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WM02DN560Q | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 31W Case: DFN3030-8 Mounting: SMD Kind of package: reel; tape On-state resistance: 5.4mΩ Gate charge: 27.8nC Drain current: 56A Pulsed drain current: 100A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 490 шт: термін постачання 21-30 дні (днів) |
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WM02DN560Q | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 31W Case: DFN3030-8 Mounting: SMD Kind of package: reel; tape On-state resistance: 5.4mΩ Gate charge: 27.8nC Drain current: 56A Pulsed drain current: 100A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 490 шт: термін постачання 14-21 дні (днів) |
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WM02DN60M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 20mΩ Gate charge: 12nC Drain current: 6A Pulsed drain current: 25A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
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WM02DN60M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 20mΩ Gate charge: 12nC Drain current: 6A Pulsed drain current: 25A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 2890 шт: термін постачання 14-21 дні (днів) |
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WM02DN70A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: TSSOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 13.5mΩ Gate charge: 8.8nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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WM02DN70A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: TSSOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 13.5mΩ Gate charge: 8.8nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 2900 шт: термін постачання 14-21 дні (днів) |
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WM02DN70M3 | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 17mΩ Gate charge: 9.6nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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WM02DN70M3 | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 17mΩ Gate charge: 9.6nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain кількість в упаковці: 1 шт |
на замовлення 2970 шт: термін постачання 14-21 дні (днів) |
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| WM02DP06D | WAYON | WM02DP06D-CYG Multi channel transistors |
на замовлення 3002 шт: термін постачання 14-21 дні (днів) |
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| WM02DP06T | WAYON | WM02DP06T-CYG Multi channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| WM02N08FB | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.75A Pulsed drain current: 3A Power dissipation: 0.15W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| WM02N08G | WAYON | WM02N08G-CYG SMD N channel transistors |
на замовлення 2767 шт: термін постачання 14-21 дні (днів) |
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| WM02N08H | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.8A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.75A Pulsed drain current: 1.8A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±10V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| WM02N08L | WAYON | WM02N08L-CYG SMD N channel transistors |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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| WM02N20F | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 1.76nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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WM02N20G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 55mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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WM02N20G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 55mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2000 шт: термін постачання 14-21 дні (днів) |
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| WM02N25M | WAYON | WM02N25M-CYG SMD N channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| WM02N28M | WAYON | WM02N28M-CYG SMD N channel transistors |
на замовлення 1750 шт: термін постачання 14-21 дні (днів) |
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| WM02N31M | WAYON | WM02N31M-CYG SMD N channel transistors |
на замовлення 2995 шт: термін постачання 14-21 дні (днів) |
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| WM02N50M | WAYON | WM02N50M-CYG SMD N channel transistors |
на замовлення 2963 шт: термін постачання 14-21 дні (днів) |
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| WM02N70ME | WAYON | WM02N70ME-CYG SMD N channel transistors |
на замовлення 2729 шт: термін постачання 14-21 дні (днів) |
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| WM02N75M2 | WAYON | WM02N75M2-CYG SMD N channel transistors |
на замовлення 2854 шт: термін постачання 14-21 дні (днів) |
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| WM02P06F | WAYON |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -660mA Pulsed drain current: -2.6A Power dissipation: 0.3W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 0.52Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| WM02P06L | WAYON | WM02P06L-CYG SMD P channel transistors |
на замовлення 2200 шт: термін постачання 14-21 дні (днів) |
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| WM02P14G | WAYON | WM02P14G-CYG SMD P channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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WM02P160R | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W Kind of package: reel; tape Case: DFN2020-6 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Pulsed drain current: -64A Drain-source voltage: -20V Drain current: -16A Gate charge: 28nC On-state resistance: 17mΩ Power dissipation: 6.5W Gate-source voltage: ±10V |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
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WM02P160R | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W Kind of package: reel; tape Case: DFN2020-6 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Pulsed drain current: -64A Drain-source voltage: -20V Drain current: -16A Gate charge: 28nC On-state resistance: 17mΩ Power dissipation: 6.5W Gate-source voltage: ±10V кількість в упаковці: 1 шт |
на замовлення 770 шт: термін постачання 14-21 дні (днів) |
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| WM02P18F | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -7.2A Power dissipation: 0.7W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 2.72nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| WM02P20G | WAYON | WM02P20G-CYG SMD P channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| WM02P23M | WAYON | WM02P23M-CYG SMD P channel transistors |
на замовлення 2817 шт: термін постачання 14-21 дні (днів) |
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WM02P26M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Pulsed drain current: -10A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 870 шт: термін постачання 21-30 дні (днів) |
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WM02P26M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Pulsed drain current: -10A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4.9nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 870 шт: термін постачання 14-21 дні (днів) |
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| WM02P30M | WAYON | WM02P30M-CYG SMD P channel transistors |
на замовлення 17960 шт: термін постачання 14-21 дні (днів) |
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| WM02P40M3 | WAYON | WM02P40M3-CYG SMD P channel transistors |
на замовлення 1962 шт: термін постачання 14-21 дні (днів) |
|
| MPR593107FR002 |
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Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C
Case - inch: 5931
Type of resistor: metal strip
Mounting: SMD
Kind of resistor: sensing
Operating temperature: -55...170°C
Height: 0.5mm
Resistance: 2mΩ
Width: 7.7mm
Length: 15mm
Tolerance: ±1%
Power: 7W
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C
Case - inch: 5931
Type of resistor: metal strip
Mounting: SMD
Kind of resistor: sensing
Operating temperature: -55...170°C
Height: 0.5mm
Resistance: 2mΩ
Width: 7.7mm
Length: 15mm
Tolerance: ±1%
Power: 7W
товару немає в наявності
В кошику
од. на суму грн.
| MPR593107FR003 |
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Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C
Case - inch: 5931
Type of resistor: metal strip
Mounting: SMD
Kind of resistor: sensing
Operating temperature: -55...170°C
Height: 0.5mm
Resistance: 3mΩ
Width: 7.7mm
Length: 15mm
Tolerance: ±1%
Power: 7W
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C
Case - inch: 5931
Type of resistor: metal strip
Mounting: SMD
Kind of resistor: sensing
Operating temperature: -55...170°C
Height: 0.5mm
Resistance: 3mΩ
Width: 7.7mm
Length: 15mm
Tolerance: ±1%
Power: 7W
товару немає в наявності
В кошику
од. на суму грн.
| MPR593108F0M50 |
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Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C
Case - inch: 5931
Type of resistor: metal strip
Mounting: SMD
Kind of resistor: sensing
Operating temperature: -55...170°C
Height: 0.5mm
Resistance: 0.5mΩ
Width: 7.7mm
Length: 15mm
Tolerance: ±1%
Power: 8W
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C
Case - inch: 5931
Type of resistor: metal strip
Mounting: SMD
Kind of resistor: sensing
Operating temperature: -55...170°C
Height: 0.5mm
Resistance: 0.5mΩ
Width: 7.7mm
Length: 15mm
Tolerance: ±1%
Power: 8W
товару немає в наявності
В кошику
од. на суму грн.
| TE P0050150.00j5 |
Виробник: WAYON
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
кількість в упаковці: 32 шт
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
кількість в упаковці: 32 шт
на замовлення 210 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 64+ | 13.57 грн |
| WM01P41M |
Виробник: WAYON
WM01P41M-CYG SMD P channel transistors
WM01P41M-CYG SMD P channel transistors
на замовлення 2995 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.27 грн |
| 471+ | 2.38 грн |
| 1294+ | 2.25 грн |
| WM01P60M |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.66 грн |
| 35+ | 11.40 грн |
| 84+ | 4.75 грн |
| 100+ | 4.29 грн |
| 277+ | 3.36 грн |
| 760+ | 3.17 грн |
| WM01P60M |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1465 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 44.00 грн |
| 21+ | 14.21 грн |
| 50+ | 5.70 грн |
| 100+ | 5.15 грн |
| 277+ | 4.03 грн |
| 760+ | 3.81 грн |
| 6000+ | 3.79 грн |
| WM02DH08D |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2857 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.87 грн |
| 54+ | 7.36 грн |
| 128+ | 3.10 грн |
| 143+ | 2.77 грн |
| 426+ | 2.19 грн |
| 1172+ | 2.07 грн |
| WM02DH08D |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2857 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.65 грн |
| 33+ | 9.18 грн |
| 77+ | 3.72 грн |
| 100+ | 3.33 грн |
| 426+ | 2.63 грн |
| 1172+ | 2.49 грн |
| 6000+ | 2.48 грн |
| WM02DN080C |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Gate charge: 11nC
Drain current: 8A
Pulsed drain current: 49A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Gate charge: 11nC
Drain current: 8A
Pulsed drain current: 49A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.19 грн |
| 24+ | 16.86 грн |
| 29+ | 14.01 грн |
| 90+ | 10.37 грн |
| 247+ | 9.82 грн |
| WM02DN080C |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Gate charge: 11nC
Drain current: 8A
Pulsed drain current: 49A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Gate charge: 11nC
Drain current: 8A
Pulsed drain current: 49A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 489 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.23 грн |
| 15+ | 21.01 грн |
| 25+ | 16.82 грн |
| 90+ | 12.45 грн |
| 247+ | 11.78 грн |
| 12000+ | 11.31 грн |
| WM02DN085C |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Drain current: 8.5A
Pulsed drain current: 56A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Drain current: 8.5A
Pulsed drain current: 56A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.19 грн |
| 24+ | 16.86 грн |
| 29+ | 14.01 грн |
| 90+ | 10.37 грн |
| 247+ | 9.82 грн |
| WM02DN085C |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Drain current: 8.5A
Pulsed drain current: 56A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Drain current: 8.5A
Pulsed drain current: 56A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.23 грн |
| 15+ | 21.01 грн |
| 25+ | 16.82 грн |
| 90+ | 12.45 грн |
| 247+ | 11.78 грн |
| 12000+ | 11.31 грн |
| WM02DN08D |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 2589 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.87 грн |
| 54+ | 7.36 грн |
| 127+ | 3.14 грн |
| 143+ | 2.78 грн |
| 426+ | 2.19 грн |
| 1172+ | 2.07 грн |
| WM02DN08D |
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Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2589 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.65 грн |
| 33+ | 9.18 грн |
| 76+ | 3.76 грн |
| 100+ | 3.33 грн |
| 426+ | 2.63 грн |
| 1172+ | 2.49 грн |
| 12000+ | 2.38 грн |
| WM02DN08T |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.87 грн |
| 51+ | 7.84 грн |
| 84+ | 4.72 грн |
| 100+ | 4.25 грн |
| 280+ | 3.34 грн |
| 768+ | 3.16 грн |
| WM02DN08T |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.65 грн |
| 31+ | 9.77 грн |
| 51+ | 5.66 грн |
| 100+ | 5.10 грн |
| 280+ | 4.01 грн |
| 768+ | 3.79 грн |
| 6000+ | 3.78 грн |
| WM02DN095C |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Gate charge: 22nC
Drain current: 9.5A
Pulsed drain current: 60A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Gate charge: 22nC
Drain current: 9.5A
Pulsed drain current: 60A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.19 грн |
| 20+ | 20.19 грн |
| 25+ | 16.78 грн |
| 75+ | 12.43 грн |
| 206+ | 11.80 грн |
| WM02DN095C |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Gate charge: 22nC
Drain current: 9.5A
Pulsed drain current: 60A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Gate charge: 22nC
Drain current: 9.5A
Pulsed drain current: 60A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.23 грн |
| 12+ | 25.16 грн |
| 25+ | 20.14 грн |
| 75+ | 14.92 грн |
| 206+ | 14.16 грн |
| 6000+ | 14.06 грн |
| 12000+ | 13.68 грн |
| WM02DN110C |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Gate charge: 23nC
Drain current: 11A
Pulsed drain current: 70A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Gate charge: 23nC
Drain current: 11A
Pulsed drain current: 70A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.10 грн |
| 22+ | 18.21 грн |
| 27+ | 14.88 грн |
| 80+ | 11.72 грн |
| 219+ | 11.08 грн |
| WM02DN110C |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Gate charge: 23nC
Drain current: 11A
Pulsed drain current: 70A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Gate charge: 23nC
Drain current: 11A
Pulsed drain current: 70A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.93 грн |
| 14+ | 22.69 грн |
| 25+ | 17.86 грн |
| 80+ | 14.06 грн |
| 219+ | 13.30 грн |
| 6000+ | 12.83 грн |
| WM02DN48A |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Gate charge: 10nC
Drain current: 4.8A
Pulsed drain current: 30A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Gate charge: 10nC
Drain current: 4.8A
Pulsed drain current: 30A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.99 грн |
| 42+ | 9.50 грн |
| 70+ | 5.70 грн |
| 100+ | 5.13 грн |
| 201+ | 4.65 грн |
| 500+ | 4.53 грн |
| 553+ | 4.39 грн |
| 2000+ | 4.23 грн |
| WM02DN48A |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Gate charge: 10nC
Drain current: 4.8A
Pulsed drain current: 30A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Gate charge: 10nC
Drain current: 4.8A
Pulsed drain current: 30A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2975 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.79 грн |
| 25+ | 11.84 грн |
| 42+ | 6.84 грн |
| 100+ | 6.16 грн |
| 201+ | 5.58 грн |
| 500+ | 5.43 грн |
| 553+ | 5.27 грн |
| WM02DN50M3 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Gate charge: 11nC
Drain current: 5A
Pulsed drain current: 20A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Gate charge: 11nC
Drain current: 5A
Pulsed drain current: 20A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.87 грн |
| 54+ | 7.36 грн |
| 127+ | 3.14 грн |
| 143+ | 2.78 грн |
| 426+ | 2.19 грн |
| 1172+ | 2.07 грн |
| WM02DN50M3 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Gate charge: 11nC
Drain current: 5A
Pulsed drain current: 20A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Gate charge: 11nC
Drain current: 5A
Pulsed drain current: 20A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 2750 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.65 грн |
| 33+ | 9.18 грн |
| 76+ | 3.76 грн |
| 100+ | 3.33 грн |
| 426+ | 2.63 грн |
| 1172+ | 2.49 грн |
| 12000+ | 2.38 грн |
| WM02DN560Q |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Gate charge: 27.8nC
Drain current: 56A
Pulsed drain current: 100A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Gate charge: 27.8nC
Drain current: 56A
Pulsed drain current: 100A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.71 грн |
| 14+ | 29.77 грн |
| 25+ | 26.76 грн |
| 45+ | 21.06 грн |
| 122+ | 19.87 грн |
| WM02DN560Q |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Gate charge: 27.8nC
Drain current: 56A
Pulsed drain current: 100A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Gate charge: 27.8nC
Drain current: 56A
Pulsed drain current: 100A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.46 грн |
| 10+ | 37.10 грн |
| 25+ | 32.11 грн |
| 45+ | 25.27 грн |
| 122+ | 23.85 грн |
| 6000+ | 23.09 грн |
| 12000+ | 22.99 грн |
| WM02DN60M3 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Gate charge: 12nC
Drain current: 6A
Pulsed drain current: 25A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Gate charge: 12nC
Drain current: 6A
Pulsed drain current: 25A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.99 грн |
| 42+ | 9.58 грн |
| 70+ | 5.70 грн |
| 100+ | 5.13 грн |
| 232+ | 4.03 грн |
| 637+ | 3.81 грн |
| WM02DN60M3 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Gate charge: 12nC
Drain current: 6A
Pulsed drain current: 25A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Gate charge: 12nC
Drain current: 6A
Pulsed drain current: 25A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 2890 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.79 грн |
| 25+ | 11.94 грн |
| 42+ | 6.84 грн |
| 100+ | 6.16 грн |
| 232+ | 4.84 грн |
| 637+ | 4.57 грн |
| 6000+ | 4.56 грн |
| WM02DN70A |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.52 грн |
| 33+ | 12.35 грн |
| 40+ | 9.90 грн |
| 100+ | 9.26 грн |
| 128+ | 7.28 грн |
| 353+ | 6.89 грн |
| WM02DN70A |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 2900 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.02 грн |
| 20+ | 15.39 грн |
| 25+ | 11.88 грн |
| 100+ | 11.12 грн |
| 128+ | 8.74 грн |
| 353+ | 8.27 грн |
| 8000+ | 7.98 грн |
| WM02DN70M3 |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.25 грн |
| 38+ | 10.69 грн |
| 62+ | 6.43 грн |
| 100+ | 5.79 грн |
| 206+ | 4.54 грн |
| 565+ | 4.30 грн |
| WM02DN70M3 |
![]() |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
кількість в упаковці: 1 шт
на замовлення 2970 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.90 грн |
| 23+ | 13.32 грн |
| 37+ | 7.71 грн |
| 100+ | 6.94 грн |
| 206+ | 5.45 грн |
| 565+ | 5.16 грн |
| 6000+ | 5.14 грн |
| WM02DP06D |
Виробник: WAYON
WM02DP06D-CYG Multi channel transistors
WM02DP06D-CYG Multi channel transistors
на замовлення 3002 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.11 грн |
| 426+ | 2.63 грн |
| 1172+ | 2.49 грн |
| WM02DP06T |
Виробник: WAYON
WM02DP06T-CYG Multi channel transistors
WM02DP06T-CYG Multi channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.55 грн |
| 280+ | 4.01 грн |
| 768+ | 3.79 грн |
| WM02N08FB |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| WM02N08G |
Виробник: WAYON
WM02N08G-CYG SMD N channel transistors
WM02N08G-CYG SMD N channel transistors
на замовлення 2767 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.46 грн |
| 638+ | 1.76 грн |
| 1755+ | 1.66 грн |
| WM02N08H |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| WM02N08L |
Виробник: WAYON
WM02N08L-CYG SMD N channel transistors
WM02N08L-CYG SMD N channel transistors
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.11 грн |
| 596+ | 1.88 грн |
| 1640+ | 1.78 грн |
| WM02N20F |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WM02N20G |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.87 грн |
| 55+ | 7.28 грн |
| 127+ | 3.14 грн |
| 182+ | 2.19 грн |
| 500+ | 1.96 грн |
| 596+ | 1.56 грн |
| 1640+ | 1.48 грн |
| WM02N20G |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.65 грн |
| 33+ | 9.08 грн |
| 76+ | 3.76 грн |
| 109+ | 2.62 грн |
| 500+ | 2.36 грн |
| 596+ | 1.87 грн |
| 1640+ | 1.78 грн |
| WM02N25M |
Виробник: WAYON
WM02N25M-CYG SMD N channel transistors
WM02N25M-CYG SMD N channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 38.39 грн |
| 893+ | 1.25 грн |
| 2458+ | 1.19 грн |
| WM02N28M |
Виробник: WAYON
WM02N28M-CYG SMD N channel transistors
WM02N28M-CYG SMD N channel transistors
на замовлення 1750 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.60 грн |
| 746+ | 1.50 грн |
| 2051+ | 1.43 грн |
| WM02N31M |
Виробник: WAYON
WM02N31M-CYG SMD N channel transistors
WM02N31M-CYG SMD N channel transistors
на замовлення 2995 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.11 грн |
| 596+ | 1.88 грн |
| 1640+ | 1.78 грн |
| WM02N50M |
Виробник: WAYON
WM02N50M-CYG SMD N channel transistors
WM02N50M-CYG SMD N channel transistors
на замовлення 2963 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.24 грн |
| 497+ | 2.26 грн |
| 1366+ | 2.14 грн |
| WM02N70ME |
Виробник: WAYON
WM02N70ME-CYG SMD N channel transistors
WM02N70ME-CYG SMD N channel transistors
на замовлення 2729 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 38.56 грн |
| 443+ | 2.53 грн |
| 1219+ | 2.39 грн |
| WM02N75M2 |
Виробник: WAYON
WM02N75M2-CYG SMD N channel transistors
WM02N75M2-CYG SMD N channel transistors
на замовлення 2854 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.34 грн |
| 249+ | 4.51 грн |
| 683+ | 4.27 грн |
| WM02P06F |
![]() |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.6A
Power dissipation: 0.3W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.6A
Power dissipation: 0.3W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| WM02P06L |
Виробник: WAYON
WM02P06L-CYG SMD P channel transistors
WM02P06L-CYG SMD P channel transistors
на замовлення 2200 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.11 грн |
| 596+ | 1.88 грн |
| 1640+ | 1.78 грн |
| WM02P14G |
Виробник: WAYON
WM02P14G-CYG SMD P channel transistors
WM02P14G-CYG SMD P channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.14 грн |
| 559+ | 2.00 грн |
| 1537+ | 1.90 грн |
| WM02P160R |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
на замовлення 770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.22 грн |
| 32+ | 12.67 грн |
| 40+ | 10.13 грн |
| 100+ | 9.58 грн |
| 125+ | 7.44 грн |
| 344+ | 7.05 грн |
| WM02P160R |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
на замовлення 770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.06 грн |
| 19+ | 15.79 грн |
| 25+ | 12.16 грн |
| 100+ | 11.50 грн |
| 125+ | 8.93 грн |
| 344+ | 8.46 грн |
| 6000+ | 8.36 грн |
| WM02P18F |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -7.2A
Power dissipation: 0.7W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 2.72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -7.2A
Power dissipation: 0.7W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 2.72nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WM02P20G |
Виробник: WAYON
WM02P20G-CYG SMD P channel transistors
WM02P20G-CYG SMD P channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.95 грн |
| 493+ | 2.28 грн |
| 1353+ | 2.16 грн |
| WM02P23M |
Виробник: WAYON
WM02P23M-CYG SMD P channel transistors
WM02P23M-CYG SMD P channel transistors
на замовлення 2817 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.60 грн |
| 746+ | 1.50 грн |
| 2051+ | 1.43 грн |
| WM02P26M |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.14 грн |
| 41+ | 9.82 грн |
| 89+ | 4.50 грн |
| 211+ | 1.88 грн |
| 500+ | 1.69 грн |
| 688+ | 1.35 грн |
| WM02P26M |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 870 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.76 грн |
| 25+ | 12.23 грн |
| 53+ | 5.40 грн |
| 127+ | 2.25 грн |
| 500+ | 2.03 грн |
| 688+ | 1.62 грн |
| 1890+ | 1.54 грн |







