| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WMJ90R260S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W Mounting: THT Pulsed drain current: 50A Power dissipation: 310W Gate charge: 39.5nC Polarisation: unipolar Technology: WMOS™ S Drain current: 10A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO247-3 On-state resistance: 0.26Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
WMJ9N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: WMOS™ D1 Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate charge: 85.2nC Drain current: 9A On-state resistance: 2.9Ω Pulsed drain current: 36A Gate-source voltage: ±30V Power dissipation: 320W Drain-source voltage: 1.5kV |
на замовлення 181 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMJP32N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Case: TO247PLUS Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 283 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK020N06HG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 258A Pulsed drain current: 1032A Power dissipation: 227W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK023N08HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 329W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 270A Pulsed drain current: 1.08kA Power dissipation: 329W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK028N08HGD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 167A Pulsed drain current: 668A Power dissipation: 166.6W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 108.2nC Kind of package: tube Kind of channel: enhancement |
на замовлення 51 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK028N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 257A Pulsed drain current: 1028A Power dissipation: 379W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 134nC Kind of package: tube Kind of channel: enhancement |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK043N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Pulsed drain current: 580A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 98.4nC Kind of package: tube Kind of channel: enhancement |
на замовлення 396 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK043N10LGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Pulsed drain current: 580A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 111.2nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK053N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 123A Pulsed drain current: 480A Power dissipation: 197.4W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 82.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 282 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK05N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 1038 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK060N08HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 95A; Idm: 278A; 86.2W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 95A Pulsed drain current: 278A Power dissipation: 86.2W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK071N15HG2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 135A; Idm: 540A; 255W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 135A Pulsed drain current: 540A Power dissipation: 255W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.1mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
на замовлення 194 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK07N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 457 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK07N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK080N10LG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 41A Pulsed drain current: 328A Power dissipation: 108.7W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 30.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK100N10TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 258.6W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK10N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
|
WMK10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 481 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK110N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 347.2W Case: TO220-3 Mounting: THT Pulsed drain current: 500A Gate charge: 73.8nC Drain current: 125A Kind of channel: enhancement Drain-source voltage: 200V Gate-source voltage: ±20V Kind of package: tube On-state resistance: 11mΩ |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK119N12HG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 75A; Idm: 300A; 125W; TO220-3 Drain-source voltage: 120V Drain current: 75A On-state resistance: 11.9mΩ Pulsed drain current: 300A Power dissipation: 125W Gate-source voltage: ±20V Mounting: THT Polarisation: unipolar Gate charge: 23.7nC Kind of channel: enhancement Case: TO220-3 Type of transistor: N-MOSFET Kind of package: tube |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK119N12LG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 75A; Idm: 300A; 125W; TO220-3 Drain-source voltage: 120V Drain current: 75A On-state resistance: 11.9mΩ Pulsed drain current: 300A Power dissipation: 125W Gate-source voltage: ±20V Mounting: THT Polarisation: unipolar Gate charge: 30nC Kind of channel: enhancement Case: TO220-3 Type of transistor: N-MOSFET Kind of package: tube |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK120N04TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 104W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhancement |
на замовлення 128 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| WMK130N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 117A Pulsed drain current: 620A Power dissipation: 416W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Gate charge: 188nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 196ns |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
|
WMK13N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 163 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK13N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 399 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK14N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 385 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK14N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 13nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK15N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Pulsed drain current: 60A Power dissipation: 156W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK161N15T2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 161A Pulsed drain current: 540A Power dissipation: 365W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
на замовлення 871 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK16N10T1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15.8A Pulsed drain current: 63.2A Power dissipation: 44.6W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 20.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK16N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
|
WMK16N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK16N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 369 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK16N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
|
WMK16N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK175N10HG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3 Pulsed drain current: 184A Power dissipation: 73W Gate charge: 17nC Polarisation: unipolar Drain current: 46A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 17mΩ Mounting: THT |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK175N10LG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3 Pulsed drain current: 184A Power dissipation: 73W Gate charge: 22.7nC Polarisation: unipolar Drain current: 46A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 17.5mΩ Mounting: THT |
на замовлення 40 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| WMK17N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 6.5A Pulsed drain current: 33A Power dissipation: 36W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 7.1nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 98ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
WMK180N03TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Pulsed drain current: 720A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| WMK18N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3 Case: TO220-3 Mounting: THT Reverse recovery time: 80ns On-state resistance: 135mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 36W Pulsed drain current: 39A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 7.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
WMK20N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK20N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 260 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK25N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 41.7W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK25N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 181 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK26N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 45 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK26N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK26N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 147W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK26N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK26N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK28N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 77 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK28N65F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 65A Gate charge: 27.3nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WMK340N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 200A Power dissipation: 173.6W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK36N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK36N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK36N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 420 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
WMK38N65FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
|
WMK3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
на замовлення 202 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| WMK40N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
WMK4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 112W Gate charge: 14.5nC Technology: WMOS™ D1 |
на замовлення 318 шт: термін постачання 14-30 дні (днів) |
|
| WMJ90R260S |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 310W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 310W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
On-state resistance: 0.26Ω
товару немає в наявності
В кошику
од. на суму грн.
| WMJ9N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 85.2nC
Drain current: 9A
On-state resistance: 2.9Ω
Pulsed drain current: 36A
Gate-source voltage: ±30V
Power dissipation: 320W
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 85.2nC
Drain current: 9A
On-state resistance: 2.9Ω
Pulsed drain current: 36A
Gate-source voltage: ±30V
Power dissipation: 320W
Drain-source voltage: 1.5kV
на замовлення 181 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 687.78 грн |
| 3+ | 510.43 грн |
| 10+ | 382.20 грн |
| 30+ | 344.15 грн |
| 120+ | 318.50 грн |
| WMJP32N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 283 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 364.38 грн |
| 3+ | 271.35 грн |
| 10+ | 203.51 грн |
| 25+ | 182.83 грн |
| 125+ | 169.59 грн |
| WMK020N06HG4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK023N08HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 329W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 329W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 329W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 329W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.02 грн |
| 10+ | 92.65 грн |
| 50+ | 81.90 грн |
| WMK028N08HGD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.18 грн |
| 10+ | 70.32 грн |
| 50+ | 62.05 грн |
| WMK028N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 104.24 грн |
| 10+ | 92.65 грн |
| WMK043N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 396 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.04 грн |
| 10+ | 57.58 грн |
| 50+ | 50.79 грн |
| 250+ | 45.50 грн |
| WMK043N10LGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK053N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 282 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.47 грн |
| 10+ | 43.93 грн |
| 50+ | 36.73 грн |
| 250+ | 32.93 грн |
| WMK05N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 1038 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 101.56 грн |
| 6+ | 77.76 грн |
| 10+ | 62.29 грн |
| 50+ | 46.74 грн |
| 100+ | 42.11 грн |
| 250+ | 38.96 грн |
| 500+ | 37.14 грн |
| 1000+ | 34.83 грн |
| WMK060N08HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; Idm: 278A; 86.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Pulsed drain current: 278A
Power dissipation: 86.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; Idm: 278A; 86.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Pulsed drain current: 278A
Power dissipation: 86.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.49 грн |
| 10+ | 51.79 грн |
| WMK071N15HG2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 135A; Idm: 540A; 255W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 135A
Pulsed drain current: 540A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 135A; Idm: 540A; 255W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 135A
Pulsed drain current: 540A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 207.58 грн |
| 10+ | 182.83 грн |
| 50+ | 161.32 грн |
| WMK07N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 457 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.40 грн |
| 7+ | 60.64 грн |
| 10+ | 47.90 грн |
| 25+ | 35.99 грн |
| 100+ | 32.18 грн |
| 250+ | 29.95 грн |
| WMK07N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK080N10LG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.13 грн |
| 10+ | 42.03 грн |
| WMK100N10TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.36 грн |
| WMK10N70C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| WMK10N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 481 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.02 грн |
| 4+ | 120.78 грн |
| 10+ | 96.79 грн |
| 25+ | 72.80 грн |
| 100+ | 65.35 грн |
| 250+ | 60.39 грн |
| WMK110N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 347.2W
Case: TO220-3
Mounting: THT
Pulsed drain current: 500A
Gate charge: 73.8nC
Drain current: 125A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 11mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 347.2W
Case: TO220-3
Mounting: THT
Pulsed drain current: 500A
Gate charge: 73.8nC
Drain current: 125A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 11mΩ
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 370.62 грн |
| 10+ | 325.95 грн |
| WMK119N12HG4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; Idm: 300A; 125W; TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.9mΩ
Pulsed drain current: 300A
Power dissipation: 125W
Gate-source voltage: ±20V
Mounting: THT
Polarisation: unipolar
Gate charge: 23.7nC
Kind of channel: enhancement
Case: TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; Idm: 300A; 125W; TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.9mΩ
Pulsed drain current: 300A
Power dissipation: 125W
Gate-source voltage: ±20V
Mounting: THT
Polarisation: unipolar
Gate charge: 23.7nC
Kind of channel: enhancement
Case: TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.95 грн |
| WMK119N12LG4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; Idm: 300A; 125W; TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.9mΩ
Pulsed drain current: 300A
Power dissipation: 125W
Gate-source voltage: ±20V
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhancement
Case: TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; Idm: 300A; 125W; TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.9mΩ
Pulsed drain current: 300A
Power dissipation: 125W
Gate-source voltage: ±20V
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhancement
Case: TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.35 грн |
| 10+ | 43.35 грн |
| WMK120N04TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.13 грн |
| 13+ | 34.08 грн |
| 50+ | 28.54 грн |
| WMK130N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 196ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 196ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| WMK13N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 163 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.51 грн |
| 7+ | 60.14 грн |
| 10+ | 48.15 грн |
| 50+ | 36.07 грн |
| 100+ | 32.51 грн |
| WMK13N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 399 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.00 грн |
| 3+ | 190.27 грн |
| 10+ | 152.22 грн |
| 50+ | 114.16 грн |
| 100+ | 102.58 грн |
| 250+ | 95.14 грн |
| WMK14N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 385 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.24 грн |
| 4+ | 118.30 грн |
| 10+ | 94.31 грн |
| 50+ | 71.15 грн |
| 100+ | 63.70 грн |
| 250+ | 59.56 грн |
| WMK14N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
товару немає в наявності
В кошику
од. на суму грн.
| WMK15N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK161N15T2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 871 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 199.56 грн |
| 10+ | 173.73 грн |
| 50+ | 153.87 грн |
| 100+ | 138.98 грн |
| 250+ | 133.19 грн |
| WMK16N10T1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 20.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 20.6nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK16N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| WMK16N60FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK16N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 369 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.36 грн |
| 4+ | 124.09 грн |
| 10+ | 100.10 грн |
| 50+ | 75.28 грн |
| 100+ | 67.01 грн |
| 250+ | 62.05 грн |
| WMK16N65FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| WMK16N70C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK175N10HG4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
Pulsed drain current: 184A
Power dissipation: 73W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 17mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
Pulsed drain current: 184A
Power dissipation: 73W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 17mΩ
Mounting: THT
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.38 грн |
| 12+ | 36.98 грн |
| WMK175N10LG4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
Pulsed drain current: 184A
Power dissipation: 73W
Gate charge: 22.7nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 17.5mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
Pulsed drain current: 184A
Power dissipation: 73W
Gate charge: 22.7nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 17.5mΩ
Mounting: THT
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.04 грн |
| 13+ | 34.33 грн |
| WMK17N25JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
товару немає в наявності
В кошику
од. на суму грн.
| WMK180N03TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK18N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
товару немає в наявності
В кошику
од. на суму грн.
| WMK20N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK20N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 260 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.49 грн |
| 10+ | 129.05 грн |
| 50+ | 96.79 грн |
| 100+ | 86.86 грн |
| 250+ | 80.25 грн |
| WMK25N06TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.09 грн |
| WMK25N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 181 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 433.87 грн |
| 3+ | 335.87 грн |
| 10+ | 268.86 грн |
| 50+ | 201.03 грн |
| 100+ | 181.17 грн |
| WMK26N60C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.82 грн |
| 3+ | 203.51 грн |
| 10+ | 162.97 грн |
| WMK26N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.49 грн |
| 10+ | 129.05 грн |
| 50+ | 95.96 грн |
| WMK26N60FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK26N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK26N65FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK28N60C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.90 грн |
| 10+ | 145.60 грн |
| 25+ | 129.88 грн |
| WMK28N65F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 65A
Gate charge: 27.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 65A
Gate charge: 27.3nC
товару немає в наявності
В кошику
од. на суму грн.
| WMK340N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 125.62 грн |
| 10+ | 110.03 грн |
| WMK36N60C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 317.16 грн |
| 3+ | 263.07 грн |
| 10+ | 220.88 грн |
| 25+ | 198.55 грн |
| 100+ | 184.48 грн |
| 250+ | 176.21 грн |
| WMK36N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 330.53 грн |
| 3+ | 273.83 грн |
| WMK36N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 420 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 219.16 грн |
| 10+ | 188.62 грн |
| 50+ | 176.21 грн |
| 100+ | 158.01 грн |
| 250+ | 153.05 грн |
| WMK38N65FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| WMK3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 202 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.40 грн |
| 10+ | 66.18 грн |
| 50+ | 57.08 грн |
| WMK40N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
товару немає в наявності
В кошику
од. на суму грн.
| WMK4N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 112W
Gate charge: 14.5nC
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 112W
Gate charge: 14.5nC
Technology: WMOS™ D1
на замовлення 318 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.76 грн |
| 29+ | 14.39 грн |
| 50+ | 12.66 грн |
| 250+ | 11.42 грн |






































