| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMB108N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 108A Pulsed drain current: 432A Power dissipation: 69W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 270 шт: термін постачання 14-21 дні (днів) |
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| WMB115N15HG4 | WAYON | WMB115N15HG4-CYG SMD N channel transistors |
на замовлення 83 шт: термін постачання 14-21 дні (днів) |
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WMB119N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 21nC On-state resistance: 13mΩ Power dissipation: 75W Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 100V Pulsed drain current: 148A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB119N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 21nC On-state resistance: 13mΩ Power dissipation: 75W Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 100V Pulsed drain current: 148A кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB119N12HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 23.7nC On-state resistance: 12mΩ Power dissipation: 96.1W Gate-source voltage: ±20V Drain current: 65A Drain-source voltage: 120V Pulsed drain current: 260A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB119N12HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 23.7nC On-state resistance: 12mΩ Power dissipation: 96.1W Gate-source voltage: ±20V Drain current: 65A Drain-source voltage: 120V Pulsed drain current: 260A кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB119N12LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 30nC On-state resistance: 11.9mΩ Power dissipation: 96.1W Gate-source voltage: ±20V Drain current: 65A Drain-source voltage: 120V Pulsed drain current: 260A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB119N12LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 30nC On-state resistance: 11.9mΩ Power dissipation: 96.1W Gate-source voltage: ±20V Drain current: 65A Drain-source voltage: 120V Pulsed drain current: 260A кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB120P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -120A Pulsed drain current: -480A Power dissipation: 168.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMB128N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W Case: PDFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Power dissipation: 127.5W Drain current: 128A Pulsed drain current: 512A Kind of package: reel; tape |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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WMB128N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W Case: PDFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Power dissipation: 127.5W Drain current: 128A Pulsed drain current: 512A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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WMB129N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 129A Pulsed drain current: 402A Power dissipation: 127.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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WMB129N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 129A Pulsed drain current: 402A Power dissipation: 127.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 92 шт: термін постачання 14-21 дні (днів) |
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 14nC On-state resistance: 15mΩ Gate-source voltage: ±20V Power dissipation: 25W Drain current: 32A Drain-source voltage: 65V Pulsed drain current: 128A Kind of package: reel; tape |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 14nC On-state resistance: 15mΩ Gate-source voltage: ±20V Power dissipation: 25W Drain current: 32A Drain-source voltage: 65V Pulsed drain current: 128A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14nC On-state resistance: 14mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 34A Drain-source voltage: 65V Pulsed drain current: 136A Kind of package: reel; tape |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Case: PDFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14nC On-state resistance: 14mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 34A Drain-source voltage: 65V Pulsed drain current: 136A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| WMB14N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8 Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Case: PDFN5060-8 On-state resistance: 390mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 80 шт: термін постачання 14-21 дні (днів) |
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| WMB175DN10LG4 | WAYON | WMB175DN10LG4-CYG Multi channel transistors |
на замовлення 95 шт: термін постачання 14-21 дні (днів) |
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WMB175N10HG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 30ns |
на замовлення 1766 шт: термін постачання 21-30 дні (днів) |
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WMB175N10HG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 30ns кількість в упаковці: 1 шт |
на замовлення 1766 шт: термін постачання 14-21 дні (днів) |
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WMB175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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WMB175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2490 шт: термін постачання 14-21 дні (днів) |
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WMB240P10HG4 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -33A Pulsed drain current: -212A Power dissipation: 147W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 64.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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WMB240P10HG4 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -33A Pulsed drain current: -212A Power dissipation: 147W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 64.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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| WMB26DN06TS | WAYON | WMB26DN06TS-CYG Multi channel transistors |
на замовлення 490 шт: термін постачання 14-21 дні (днів) |
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| WMB26N06TS | WAYON | WMB26N06TS-CYG SMD N channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB31430DN | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 56/130A Power dissipation: 24/37.8W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 4.5/1.3mΩ Mounting: SMD Gate charge: 31.1/90nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMB31430DN | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 56/130A Power dissipation: 24/37.8W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 4.5/1.3mΩ Mounting: SMD Gate charge: 31.1/90nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMB340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 40A Pulsed drain current: 160A Power dissipation: 108.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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WMB340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 40A Pulsed drain current: 160A Power dissipation: 108.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 90 шт: термін постачання 14-21 дні (днів) |
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| WMB35P04T1 | WAYON | WMB35P04T1-CYG SMD P channel transistors |
на замовлення 398 шт: термін постачання 14-21 дні (днів) |
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| WMB35P06TS | WAYON | WMB35P06TS-CYG SMD P channel transistors |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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WMB40N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 160A Power dissipation: 33W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
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WMB40N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 160A Power dissipation: 33W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 475 шт: термін постачання 14-21 дні (днів) |
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| WMB40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 37A Pulsed drain current: 180A Power dissipation: 41.7W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMB46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 37A Pulsed drain current: 180A Power dissipation: 41.7W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| WMB50N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 90W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 138ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMB50N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 89W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 16A Pulsed drain current: 90A Power dissipation: 89W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 182ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMB50P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 39W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 478 шт: термін постачання 21-30 дні (днів) |
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WMB50P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 39W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 478 шт: термін постачання 14-21 дні (днів) |
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WMB50P04TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -200A; 55W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -50A Pulsed drain current: -200A Power dissipation: 55W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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WMB50P04TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -200A; 55W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -50A Pulsed drain current: -200A Power dissipation: 55W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 400 шт: термін постачання 14-21 дні (днів) |
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| WMB510N15HG2 | WAYON | WMB510N15HG2-CYG SMD N channel transistors |
на замовлення 80 шт: термін постачання 14-21 дні (днів) |
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| WMB52N03T2 | WAYON | WMB52N03T2-CYG SMD N channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMB56N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W Power dissipation: 35.7W Mounting: SMD Kind of package: reel; tape Case: PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 36nC On-state resistance: 7.2mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 224A Kind of channel: enhancement |
на замовлення 463 шт: термін постачання 21-30 дні (днів) |
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WMB56N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W Power dissipation: 35.7W Mounting: SMD Kind of package: reel; tape Case: PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 36nC On-state resistance: 7.2mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 224A Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 463 шт: термін постачання 14-21 дні (днів) |
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| WMB58N03T1 | WAYON | WMB58N03T1-CYG SMD N channel transistors |
на замовлення 497 шт: термін постачання 14-21 дні (днів) |
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| WMB60P02TS | WAYON | WMB60P02TS-CYG SMD P channel transistors |
на замовлення 490 шт: термін постачання 14-21 дні (днів) |
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| WMB60P03TA | WAYON | WMB60P03TA-CYG SMD P channel transistors |
на замовлення 466 шт: термін постачання 14-21 дні (днів) |
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| WMB690N15HG2 | WAYON | WMB690N15HG2-CYG SMD N channel transistors |
на замовлення 75 шт: термін постачання 14-21 дні (днів) |
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| WMB70P02TS | WAYON | WMB70P02TS-CYG SMD P channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| WMB80N06TS | WAYON | WMB80N06TS-CYG SMD N channel transistors |
на замовлення 90 шт: термін постачання 14-21 дні (днів) |
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| WMB81N03T1 | WAYON | WMB81N03T1-CYG SMD N channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| WMB83N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 31A Pulsed drain current: 145A Power dissipation: 92W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 180ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMB85N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 240A Power dissipation: 180W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Reverse recovery time: 160ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMB90N02TS | WAYON | WMB90N02TS-CYG SMD N channel transistors |
на замовлення 380 шт: термін постачання 14-21 дні (днів) |
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| WMB108N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 270 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.22 грн |
| 13+ | 23.55 грн |
| 25+ | 20.29 грн |
| 100+ | 17.99 грн |
| 500+ | 16.65 грн |
| 3000+ | 15.69 грн |
| WMB115N15HG4 |
Виробник: WAYON
WMB115N15HG4-CYG SMD N channel transistors
WMB115N15HG4-CYG SMD N channel transistors
на замовлення 83 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.99 грн |
| 18+ | 66.02 грн |
| 48+ | 62.20 грн |
| WMB119N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 21nC
On-state resistance: 13mΩ
Power dissipation: 75W
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 100V
Pulsed drain current: 148A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 21nC
On-state resistance: 13mΩ
Power dissipation: 75W
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 100V
Pulsed drain current: 148A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.52 грн |
| 13+ | 31.26 грн |
| 25+ | 28.15 грн |
| 100+ | 24.88 грн |
| WMB119N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 21nC
On-state resistance: 13mΩ
Power dissipation: 75W
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 100V
Pulsed drain current: 148A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 21nC
On-state resistance: 13mΩ
Power dissipation: 75W
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 100V
Pulsed drain current: 148A
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 61.83 грн |
| 10+ | 38.95 грн |
| 25+ | 33.78 грн |
| 100+ | 29.85 грн |
| 500+ | 27.65 грн |
| 3000+ | 25.93 грн |
| WMB119N12HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 23.7nC
On-state resistance: 12mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 23.7nC
On-state resistance: 12mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.40 грн |
| 10+ | 41.14 грн |
| 25+ | 38.83 грн |
| 100+ | 34.45 грн |
| WMB119N12HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 23.7nC
On-state resistance: 12mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 23.7nC
On-state resistance: 12mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 77.28 грн |
| 10+ | 51.27 грн |
| 25+ | 46.60 грн |
| 100+ | 41.34 грн |
| 500+ | 38.27 грн |
| 3000+ | 35.79 грн |
| WMB119N12LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 30nC
On-state resistance: 11.9mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 30nC
On-state resistance: 11.9mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.40 грн |
| 10+ | 41.14 грн |
| 25+ | 38.83 грн |
| 100+ | 34.45 грн |
| WMB119N12LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 30nC
On-state resistance: 11.9mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96.1W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Mounting: SMD
Gate charge: 30nC
On-state resistance: 11.9mΩ
Power dissipation: 96.1W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 120V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 77.28 грн |
| 10+ | 51.27 грн |
| 25+ | 46.60 грн |
| 100+ | 41.34 грн |
| 500+ | 38.27 грн |
| 3000+ | 35.79 грн |
| WMB120P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB128N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.87 грн |
| 10+ | 74.16 грн |
| 16+ | 59.01 грн |
| 44+ | 55.82 грн |
| WMB128N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 103.05 грн |
| 10+ | 92.41 грн |
| 16+ | 70.81 грн |
| 44+ | 66.98 грн |
| 6000+ | 65.07 грн |
| WMB129N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.12 грн |
| 10+ | 57.97 грн |
| 25+ | 51.43 грн |
| WMB129N10T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 92 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.35 грн |
| 10+ | 72.24 грн |
| 25+ | 61.72 грн |
| 100+ | 57.22 грн |
| 500+ | 55.31 грн |
| 3000+ | 53.49 грн |
| WMB140DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Drain current: 32A
Drain-source voltage: 65V
Pulsed drain current: 128A
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Drain current: 32A
Drain-source voltage: 65V
Pulsed drain current: 128A
Kind of package: reel; tape
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.66 грн |
| 15+ | 27.99 грн |
| 25+ | 25.12 грн |
| 100+ | 22.25 грн |
| 500+ | 20.57 грн |
| WMB140DNV6LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Drain current: 32A
Drain-source voltage: 65V
Pulsed drain current: 128A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Drain current: 32A
Drain-source voltage: 65V
Pulsed drain current: 128A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.80 грн |
| 10+ | 34.88 грн |
| 25+ | 30.14 грн |
| 100+ | 26.70 грн |
| 500+ | 24.69 грн |
| 3000+ | 23.25 грн |
| WMB140NV6LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 34A
Drain-source voltage: 65V
Pulsed drain current: 136A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 34A
Drain-source voltage: 65V
Pulsed drain current: 136A
Kind of package: reel; tape
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.08 грн |
| 20+ | 20.01 грн |
| 25+ | 16.35 грн |
| 100+ | 14.51 грн |
| 500+ | 13.40 грн |
| WMB140NV6LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 34A
Drain-source voltage: 65V
Pulsed drain current: 136A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 34A
Drain-source voltage: 65V
Pulsed drain current: 136A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.49 грн |
| 12+ | 24.94 грн |
| 25+ | 19.62 грн |
| 100+ | 17.41 грн |
| 500+ | 16.08 грн |
| 3000+ | 15.02 грн |
| WMB14N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMB150N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.51 грн |
| 16+ | 25.04 грн |
| 25+ | 22.49 грн |
| WMB150N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 80 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.61 грн |
| 10+ | 31.20 грн |
| 25+ | 26.98 грн |
| 100+ | 23.92 грн |
| 500+ | 22.20 грн |
| 3000+ | 20.67 грн |
| WMB175DN10LG4 |
Виробник: WAYON
WMB175DN10LG4-CYG Multi channel transistors
WMB175DN10LG4-CYG Multi channel transistors
на замовлення 95 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.49 грн |
| 23+ | 49.37 грн |
| 63+ | 46.69 грн |
| WMB175N10HG4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
на замовлення 1766 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.83 грн |
| 10+ | 40.11 грн |
| 25+ | 24.08 грн |
| 57+ | 16.67 грн |
| 156+ | 15.71 грн |
| WMB175N10HG4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
на замовлення 1766 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.19 грн |
| 10+ | 49.98 грн |
| 25+ | 28.90 грн |
| 57+ | 20.00 грн |
| 156+ | 18.85 грн |
| WMB175N10LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.64 грн |
| 19+ | 21.45 грн |
| 25+ | 19.30 грн |
| 54+ | 17.70 грн |
| 100+ | 17.06 грн |
| 147+ | 16.67 грн |
| 500+ | 16.03 грн |
| WMB175N10LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.37 грн |
| 12+ | 26.73 грн |
| 25+ | 23.16 грн |
| 54+ | 21.24 грн |
| 100+ | 20.48 грн |
| 147+ | 20.00 грн |
| 500+ | 19.23 грн |
| WMB240P10HG4 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.13 грн |
| 10+ | 64.59 грн |
| 25+ | 56.61 грн |
| WMB240P10HG4 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.56 грн |
| 10+ | 80.49 грн |
| 25+ | 67.94 грн |
| 100+ | 64.11 грн |
| 500+ | 60.28 грн |
| 3000+ | 59.33 грн |
| WMB26DN06TS |
Виробник: WAYON
WMB26DN06TS-CYG Multi channel transistors
WMB26DN06TS-CYG Multi channel transistors
на замовлення 490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 51.73 грн |
| 59+ | 19.23 грн |
| 162+ | 18.08 грн |
| WMB26N06TS |
Виробник: WAYON
WMB26N06TS-CYG SMD N channel transistors
WMB26N06TS-CYG SMD N channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.13 грн |
| 106+ | 10.72 грн |
| 289+ | 10.14 грн |
| WMB31430DN |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.00 грн |
| 10+ | 69.37 грн |
| 25+ | 61.40 грн |
| 100+ | 57.41 грн |
| WMB31430DN |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.80 грн |
| 10+ | 86.45 грн |
| 25+ | 73.68 грн |
| 100+ | 68.89 грн |
| 500+ | 66.98 грн |
| 3000+ | 65.07 грн |
| WMB340N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 136.54 грн |
| 10+ | 120.40 грн |
| 25+ | 106.05 грн |
| WMB340N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 90 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 163.84 грн |
| 10+ | 150.04 грн |
| 25+ | 127.26 грн |
| 100+ | 118.65 грн |
| 500+ | 113.87 грн |
| 3000+ | 110.04 грн |
| WMB35P04T1 |
Виробник: WAYON
WMB35P04T1-CYG SMD P channel transistors
WMB35P04T1-CYG SMD P channel transistors
на замовлення 398 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.28 грн |
| 71+ | 15.98 грн |
| 194+ | 15.12 грн |
| WMB35P06TS |
Виробник: WAYON
WMB35P06TS-CYG SMD P channel transistors
WMB35P06TS-CYG SMD P channel transistors
на замовлення 89 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.86 грн |
| 49+ | 23.25 грн |
| 134+ | 22.01 грн |
| WMB40N04TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.77 грн |
| 29+ | 14.11 грн |
| 34+ | 11.80 грн |
| 100+ | 11.16 грн |
| WMB40N04TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 475 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.13 грн |
| 17+ | 17.59 грн |
| 25+ | 14.16 грн |
| 100+ | 13.40 грн |
| 500+ | 11.77 грн |
| 3000+ | 10.72 грн |
| 6000+ | 10.43 грн |
| WMB40N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
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В кошику
од. на суму грн.
| WMB46N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.77 грн |
| 29+ | 14.11 грн |
| 34+ | 11.80 грн |
| 100+ | 11.16 грн |
| 500+ | 9.81 грн |
| WMB46N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.13 грн |
| 17+ | 17.59 грн |
| 25+ | 14.16 грн |
| 100+ | 13.40 грн |
| 500+ | 11.77 грн |
| 3000+ | 10.72 грн |
| 6000+ | 10.33 грн |
| WMB50N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
товару немає в наявності
В кошику
од. на суму грн.
| WMB50N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 89W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 16A
Pulsed drain current: 90A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 182ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 89W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 16A
Pulsed drain current: 90A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 182ns
товару немає в наявності
В кошику
од. на суму грн.
| WMB50P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.35 грн |
| 22+ | 18.50 грн |
| 27+ | 15.23 грн |
| 100+ | 13.48 грн |
| WMB50P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 478 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.22 грн |
| 13+ | 23.05 грн |
| 25+ | 18.28 грн |
| 100+ | 16.17 грн |
| 500+ | 15.02 грн |
| 3000+ | 14.07 грн |
| WMB50P04TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -200A; 55W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 55W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -200A; 55W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 55W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.50 грн |
| 19+ | 21.85 грн |
| 25+ | 19.78 грн |
| 100+ | 17.38 грн |
| WMB50P04TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -200A; 55W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 55W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -200A; 55W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 55W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 400 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.40 грн |
| 11+ | 27.23 грн |
| 25+ | 23.73 грн |
| 100+ | 20.86 грн |
| 500+ | 19.33 грн |
| 3000+ | 18.08 грн |
| WMB510N15HG2 |
Виробник: WAYON
WMB510N15HG2-CYG SMD N channel transistors
WMB510N15HG2-CYG SMD N channel transistors
на замовлення 80 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.72 грн |
| 28+ | 41.24 грн |
| 76+ | 38.94 грн |
| WMB52N03T2 |
Виробник: WAYON
WMB52N03T2-CYG SMD N channel transistors
WMB52N03T2-CYG SMD N channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.37 грн |
| 70+ | 16.27 грн |
| 192+ | 15.31 грн |
| WMB56N04T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Power dissipation: 35.7W
Mounting: SMD
Kind of package: reel; tape
Case: PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Power dissipation: 35.7W
Mounting: SMD
Kind of package: reel; tape
Case: PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Kind of channel: enhancement
на замовлення 463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.21 грн |
| 22+ | 18.90 грн |
| 26+ | 15.63 грн |
| 78+ | 12.20 грн |
| 213+ | 11.48 грн |
| WMB56N04T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Power dissipation: 35.7W
Mounting: SMD
Kind of package: reel; tape
Case: PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Power dissipation: 35.7W
Mounting: SMD
Kind of package: reel; tape
Case: PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 463 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.25 грн |
| 13+ | 23.55 грн |
| 25+ | 18.75 грн |
| 78+ | 14.64 грн |
| 213+ | 13.78 грн |
| 6000+ | 13.30 грн |
| WMB58N03T1 |
Виробник: WAYON
WMB58N03T1-CYG SMD N channel transistors
WMB58N03T1-CYG SMD N channel transistors
на замовлення 497 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.13 грн |
| 104+ | 10.81 грн |
| 286+ | 10.24 грн |
| WMB60P02TS |
Виробник: WAYON
WMB60P02TS-CYG SMD P channel transistors
WMB60P02TS-CYG SMD P channel transistors
на замовлення 490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.79 грн |
| 70+ | 16.27 грн |
| 192+ | 15.31 грн |
| WMB60P03TA |
Виробник: WAYON
WMB60P03TA-CYG SMD P channel transistors
WMB60P03TA-CYG SMD P channel transistors
на замовлення 466 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.48 грн |
| 49+ | 23.44 грн |
| 133+ | 22.20 грн |
| WMB690N15HG2 |
Виробник: WAYON
WMB690N15HG2-CYG SMD N channel transistors
WMB690N15HG2-CYG SMD N channel transistors
на замовлення 75 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.01 грн |
| 34+ | 33.49 грн |
| 93+ | 31.67 грн |
| WMB70P02TS |
Виробник: WAYON
WMB70P02TS-CYG SMD P channel transistors
WMB70P02TS-CYG SMD P channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.48 грн |
| 49+ | 23.44 грн |
| 133+ | 22.20 грн |
| WMB80N06TS |
Виробник: WAYON
WMB80N06TS-CYG SMD N channel transistors
WMB80N06TS-CYG SMD N channel transistors
на замовлення 90 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.12 грн |
| 36+ | 31.58 грн |
| 99+ | 29.85 грн |
| WMB81N03T1 |
Виробник: WAYON
WMB81N03T1-CYG SMD N channel transistors
WMB81N03T1-CYG SMD N channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.53 грн |
| 67+ | 16.94 грн |
| 183+ | 16.08 грн |
| WMB83N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
товару немає в наявності
В кошику
од. на суму грн.
| WMB85N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
товару немає в наявності
В кошику
од. на суму грн.
| WMB90N02TS |
Виробник: WAYON
WMB90N02TS-CYG SMD N channel transistors
WMB90N02TS-CYG SMD N channel transistors
на замовлення 380 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.56 грн |
| 72+ | 15.79 грн |
| 197+ | 14.93 грн |




