| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MPR251206F0M20 | WAYON |
 Category: SMD resistorsDescription: Resistor: metal strip; sensing; SMD; 2512; 200uΩ; 6W; ±1%; -55÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 0.2mΩ Power: 6W Tolerance: ±1% Operating temperature: -55...170°C Width: 3.1mm Height: 0.35mm Length: 6.3mm |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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MPR251206F0M30 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 300uΩ; sensing; SMD; 2512; 6W; ±1%; -55÷170°C Type of resistor: metal strip Resistance: 0.3mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6332 Power: 6W Tolerance: ±1% Operating temperature: -55...170°C Length: 6.3mm Width: 3.1mm Height: 0.35mm |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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MPR251206F0M50 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 500uΩ; sensing; SMD; 2512; 6W; ±1%; -55÷170°C Type of resistor: metal strip Resistance: 0.5mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6332 Power: 6W Tolerance: ±1% Operating temperature: -55...170°C Length: 6.3mm Width: 3.1mm Height: 0.35mm |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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MPR392108FR001 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 1mΩ; sensing; SMD; 3921; 8W; ±1%; -55÷170°C Type of resistor: metal strip Resistance: 1mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 3921 Power: 8W Tolerance: ±1% Operating temperature: -55...170°C Length: 10mm Width: 5.2mm Height: 0.5mm |
на замовлення 367 шт: термін постачання 14-30 дні (днів) |
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MPR392109F0M50 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 500uΩ; sensing; SMD; 3921; 9W; ±1%; -55÷170°C Type of resistor: metal strip Resistance: 0.5mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 3921 Power: 9W Tolerance: ±1% Operating temperature: -55...170°C Length: 10mm Width: 5.2mm Height: 0.5mm |
на замовлення 248 шт: термін постачання 14-30 дні (днів) |
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MPR392110F0M30 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 300uΩ; sensing; SMD; 3921; 10W; ±1%; W: 5.2mm Type of resistor: metal strip Resistance: 0.3mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 3921 Power: 10W Tolerance: ±1% Operating temperature: -55...170°C Length: 10mm Width: 5.2mm Height: 0.5mm |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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MPR593108F0M50 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 500uΩ; sensing; SMD; 5931; 8W; ±1%; -55÷170°C Type of resistor: metal strip Resistance: 0.5mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 5931 Power: 8W Tolerance: ±1% Operating temperature: -55...170°C Length: 15mm Width: 7.7mm Height: 0.5mm |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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MPR593110FR001 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 1mΩ; sensing; SMD; 5931; 10W; ±1%; -55÷170°C Type of resistor: metal strip Resistance: 1mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 5931 Power: 10W Tolerance: ±1% Operating temperature: -55...170°C Width: 7.7mm Height: 0.5mm Length: 15mm |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
| T1235H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO220ABIns; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 120A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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T1235H-800L | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 120A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 35mA Max. forward impulse current: 120A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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T1235H-800NB | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO263; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO263 Gate current: 35mA Max. forward impulse current: 120A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| T1635H-800AL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220ABIns; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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T1635H-800KL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 160A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220-3 Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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T1635H-800NBL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO263; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO263 Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| T1635H-800NL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO262 Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| T2035H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220ABIns; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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T2035H-800L | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 200A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220FP Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| T2035H-800N | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO262; THT; tube; Ifsm: 200A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO262 Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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T2035H-800NB | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO263; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO263 Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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T2050H-800K | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A Kind of package: tube Mounting: THT Type of thyristor: thyristor Gate current: 50mA Max. load current: 20A Max. off-state voltage: 0.8kV Max. forward impulse current: 200A Case: TO220-3 Features of semiconductor devices: high temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| T2535H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 250A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| T2535H-800AY | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220-3 Gate current: 35mA Max. forward impulse current: 250A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| T3035H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube Mounting: THT Type of thyristor: thyristor Kind of package: tube Features of semiconductor devices: high temperature Gate current: 35mA Case: TO220ABIns Max. load current: 30A Max. forward impulse current: 0.3kA Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| T4050H-800EA | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube; Ifsm: 400A Mounting: THT Features of semiconductor devices: high temperature Kind of package: tube Type of thyristor: thyristor Gate current: 50mA Max. load current: 40A Max. forward impulse current: 0.4kA Max. off-state voltage: 0.8kV Case: TO3PF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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T435H-800AM | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO252 Gate current: 35mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: high temperature Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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T435H-800L | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 40A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TE P0050150.00j5 | WAYON |
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5 кількість в упаковці: 32 шт |
на замовлення 190 шт: термін постачання 28-31 дні (днів) |
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WM02DH08D | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 750/-660mA Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 380/520mΩ Mounting: SMD Gate charge: 1/2.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 4527 шт: термін постачання 14-30 дні (днів) |
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WM02DN080C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape Drain current: 8A Pulsed drain current: 49A On-state resistance: 15.5mΩ Gate charge: 11nC Gate-source voltage: ±12V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 489 шт: термін постачання 14-30 дні (днів) |
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WM02DN085C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape Drain current: 8.5A Pulsed drain current: 56A On-state resistance: 10.9mΩ Gate charge: 22.1nC Gate-source voltage: ±12V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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WM02DN08D | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: 0.8A Pulsed drain current: 3A On-state resistance: 0.25Ω Gate charge: 1.1nC Gate-source voltage: ±10V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement |
на замовлення 1589 шт: термін постачання 14-30 дні (днів) |
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WM02DN08T | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain current: 0.8A Pulsed drain current: 3A On-state resistance: 0.25Ω Gate charge: 1.1nC Gate-source voltage: ±10V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement |
на замовлення 2475 шт: термін постачання 14-30 дні (днів) |
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WM02DN095C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape Drain current: 9.5A Pulsed drain current: 60A On-state resistance: 9.4mΩ Gate charge: 22nC Gate-source voltage: ±12V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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WM02DN110C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape Drain current: 11A Pulsed drain current: 70A On-state resistance: 7.5mΩ Gate charge: 23nC Gate-source voltage: ±12V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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WM02DN48A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.25W Case: SOP8 Mounting: SMD Kind of package: reel; tape Drain current: 4.8A Pulsed drain current: 30A On-state resistance: 30mΩ Gate charge: 10nC Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 2973 шт: термін постачання 14-30 дні (днів) |
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WM02DN50M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Drain current: 5A Pulsed drain current: 20A On-state resistance: 27mΩ Gate charge: 11nC Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2674 шт: термін постачання 14-30 дні (днів) |
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WM02DN560Q | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 56A Pulsed drain current: 100A Power dissipation: 31W Case: DFN3030-8 Gate-source voltage: ±12V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 27.8nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain Version: ESD |
на замовлення 490 шт: термін постачання 14-30 дні (днів) |
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WM02DN60M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 25A Power dissipation: 1.5W Case: SOT23-6 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2876 шт: термін постачання 14-30 дні (днів) |
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WM02DN70A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Drain current: 7A Pulsed drain current: 28A On-state resistance: 13.5mΩ Gate charge: 8.8nC Gate-source voltage: ±10V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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WM02DN70M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Drain current: 7A Pulsed drain current: 28A On-state resistance: 17mΩ Gate charge: 9.6nC Gate-source voltage: ±10V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 2950 шт: термін постачання 14-30 дні (днів) |
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WM02DP06T | WAYON |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -660mA Pulsed drain current: -2.64A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 0.52Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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WM02N20G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 55mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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WM02P160R | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W On-state resistance: 17mΩ Mounting: SMD Pulsed drain current: -64A Power dissipation: 6.5W Gate charge: 28nC Polarisation: unipolar Drain current: -16A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: DFN2020-6 |
на замовлення 770 шт: термін постачання 14-30 дні (днів) |
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WM02P60M2 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -18A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 23mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2796 шт: термін постачання 14-30 дні (днів) |
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WM03N115A | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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WM03N57M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2958 шт: термін постачання 14-30 дні (днів) |
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WM03N58M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 22A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 27mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2344 шт: термін постачання 14-30 дні (днів) |
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WM03N58M2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 22A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2405 шт: термін постачання 14-30 дні (днів) |
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WM04P56M2 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.6A Power dissipation: 2W Case: SOT23 On-state resistance: 50mΩ Mounting: SMD Gate charge: 17.5nC Kind of channel: enhancement Pulsed drain current: -22.4A Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WM05N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Pulsed drain current: 0.88A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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WM05N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 1A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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WM05N03G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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WM05N03M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2164 шт: термін постачання 14-30 дні (днів) |
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WM05P20M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| WM06N03FB | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.36W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WM06N03FE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WM06N03GE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2940 шт: термін постачання 14-30 дні (днів) |
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WM06N03HE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WM06N03LE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2880 шт: термін постачання 14-30 дні (днів) |
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WM06N03ME | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
| MPR251206F0M20 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 2512; 200uΩ; 6W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 0.2mΩ
Power: 6W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 3.1mm
Height: 0.35mm
Length: 6.3mm
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 2512; 200uΩ; 6W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 0.2mΩ
Power: 6W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 3.1mm
Height: 0.35mm
Length: 6.3mm
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MPR251206F0M30 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 300uΩ; sensing; SMD; 2512; 6W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.3mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 6W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 6.3mm
Width: 3.1mm
Height: 0.35mm
Category: SMD resistors
Description: Resistor: metal strip; 300uΩ; sensing; SMD; 2512; 6W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.3mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 6W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 6.3mm
Width: 3.1mm
Height: 0.35mm
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MPR251206F0M50 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 500uΩ; sensing; SMD; 2512; 6W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.5mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 6W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 6.3mm
Width: 3.1mm
Height: 0.35mm
Category: SMD resistors
Description: Resistor: metal strip; 500uΩ; sensing; SMD; 2512; 6W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.5mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 6W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 6.3mm
Width: 3.1mm
Height: 0.35mm
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.44 грн |
| 13+ | 33.59 грн |
| MPR392108FR001 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 1mΩ; sensing; SMD; 3921; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 1mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 10mm
Width: 5.2mm
Height: 0.5mm
Category: SMD resistors
Description: Resistor: metal strip; 1mΩ; sensing; SMD; 3921; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 1mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 10mm
Width: 5.2mm
Height: 0.5mm
на замовлення 367 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 88.29 грн |
| 11+ | 38.63 грн |
| 100+ | 27.80 грн |
| MPR392109F0M50 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 500uΩ; sensing; SMD; 3921; 9W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.5mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Power: 9W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 10mm
Width: 5.2mm
Height: 0.5mm
Category: SMD resistors
Description: Resistor: metal strip; 500uΩ; sensing; SMD; 3921; 9W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.5mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Power: 9W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 10mm
Width: 5.2mm
Height: 0.5mm
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.92 грн |
| 11+ | 40.78 грн |
| 100+ | 29.29 грн |
| MPR392110F0M30 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 300uΩ; sensing; SMD; 3921; 10W; ±1%; W: 5.2mm
Type of resistor: metal strip
Resistance: 0.3mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 10mm
Width: 5.2mm
Height: 0.5mm
Category: SMD resistors
Description: Resistor: metal strip; 300uΩ; sensing; SMD; 3921; 10W; ±1%; W: 5.2mm
Type of resistor: metal strip
Resistance: 0.3mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 10mm
Width: 5.2mm
Height: 0.5mm
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MPR593108F0M50 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 500uΩ; sensing; SMD; 5931; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.5mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 15mm
Width: 7.7mm
Height: 0.5mm
Category: SMD resistors
Description: Resistor: metal strip; 500uΩ; sensing; SMD; 5931; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 0.5mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 15mm
Width: 7.7mm
Height: 0.5mm
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MPR593110FR001 |
|
Виробник: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 1mΩ; sensing; SMD; 5931; 10W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 1mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Category: SMD resistors
Description: Resistor: metal strip; 1mΩ; sensing; SMD; 5931; 10W; ±1%; -55÷170°C
Type of resistor: metal strip
Resistance: 1mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 7.7mm
Height: 0.5mm
Length: 15mm
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| T1235H-800A |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T1235H-800L |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 120A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 120A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T1235H-800NB |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| T1635H-800AL |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T1635H-800KL |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T1635H-800NBL |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| T1635H-800NL |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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| T2035H-800A |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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| T2035H-800L |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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В кошику
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| T2035H-800N |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO262; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO262; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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В кошику
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| T2035H-800NB |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
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В кошику
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| T2050H-800K |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 20A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 200A
Case: TO220-3
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 20A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 200A
Case: TO220-3
Features of semiconductor devices: high temperature
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В кошику
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| T2535H-800A |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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В кошику
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| T2535H-800AY |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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В кошику
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| T3035H-800A |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
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| T4050H-800EA |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube; Ifsm: 400A
Mounting: THT
Features of semiconductor devices: high temperature
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Case: TO3PF
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube; Ifsm: 400A
Mounting: THT
Features of semiconductor devices: high temperature
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Case: TO3PF
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| T435H-800AM |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
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| T435H-800L |
Виробник: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 40A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 40A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
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| TE P0050150.00j5 |
Виробник: WAYON
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
кількість в упаковці: 32 шт
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
кількість в упаковці: 32 шт
на замовлення 190 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 64+ | 14.71 грн |
| WM02DH08D |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 4527 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.73 грн |
| 50+ | 8.36 грн |
| 118+ | 3.51 грн |
| 132+ | 3.15 грн |
| 500+ | 2.80 грн |
| 3000+ | 2.51 грн |
| WM02DN080C |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8A
Pulsed drain current: 49A
On-state resistance: 15.5mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8A
Pulsed drain current: 49A
On-state resistance: 15.5mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 489 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.55 грн |
| 25+ | 16.71 грн |
| 30+ | 13.90 грн |
| 100+ | 13.15 грн |
| WM02DN085C |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8.5A
Pulsed drain current: 56A
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8.5A
Pulsed drain current: 56A
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.55 грн |
| 25+ | 16.71 грн |
| 30+ | 13.90 грн |
| 100+ | 13.15 грн |
| 500+ | 11.58 грн |
| WM02DN08D |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
на замовлення 1589 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.95 грн |
| 55+ | 7.61 грн |
| 131+ | 3.18 грн |
| 145+ | 2.86 грн |
| 500+ | 2.54 грн |
| WM02DN08T |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
на замовлення 2475 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.95 грн |
| 52+ | 8.11 грн |
| 86+ | 4.86 грн |
| 100+ | 4.36 грн |
| 500+ | 3.84 грн |
| WM02DN095C |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 9.5A
Pulsed drain current: 60A
On-state resistance: 9.4mΩ
Gate charge: 22nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 9.5A
Pulsed drain current: 60A
On-state resistance: 9.4mΩ
Gate charge: 22nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.33 грн |
| 21+ | 20.52 грн |
| 25+ | 17.12 грн |
| 100+ | 16.21 грн |
| 500+ | 14.23 грн |
| WM02DN110C |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 11A
Pulsed drain current: 70A
On-state resistance: 7.5mΩ
Gate charge: 23nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 11A
Pulsed drain current: 70A
On-state resistance: 7.5mΩ
Gate charge: 23nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 34.75 грн |
| 23+ | 18.45 грн |
| 28+ | 15.14 грн |
| 100+ | 13.40 грн |
| 500+ | 12.41 грн |
| WM02DN48A |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 4.8A
Pulsed drain current: 30A
On-state resistance: 30mΩ
Gate charge: 10nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 4.8A
Pulsed drain current: 30A
On-state resistance: 30mΩ
Gate charge: 10nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 2973 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.40 грн |
| 44+ | 9.43 грн |
| 74+ | 5.66 грн |
| 100+ | 5.07 грн |
| 500+ | 4.48 грн |
| 2000+ | 4.37 грн |
| WM02DN50M3 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 5A
Pulsed drain current: 20A
On-state resistance: 27mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 5A
Pulsed drain current: 20A
On-state resistance: 27mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2674 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.95 грн |
| 55+ | 7.61 грн |
| 131+ | 3.18 грн |
| 145+ | 2.86 грн |
| 500+ | 2.54 грн |
| WM02DN560Q |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 56A
Pulsed drain current: 100A
Power dissipation: 31W
Case: DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 56A
Pulsed drain current: 100A
Power dissipation: 31W
Case: DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.45 грн |
| 14+ | 29.78 грн |
| 25+ | 26.80 грн |
| 100+ | 23.74 грн |
| WM02DN60M3 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2876 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.40 грн |
| 44+ | 9.43 грн |
| 74+ | 5.63 грн |
| 100+ | 5.05 грн |
| 500+ | 4.47 грн |
| WM02DN70A |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.31 грн |
| 33+ | 12.74 грн |
| 41+ | 10.09 грн |
| 100+ | 9.60 грн |
| 500+ | 8.44 грн |
| 2000+ | 7.61 грн |
| WM02DN70M3 |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 17mΩ
Gate charge: 9.6nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 17mΩ
Gate charge: 9.6nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.85 грн |
| 38+ | 11.00 грн |
| 63+ | 6.65 грн |
| 100+ | 5.92 грн |
| 500+ | 5.25 грн |
| WM02DP06T |
|
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.95 грн |
| 52+ | 8.11 грн |
| 86+ | 4.83 грн |
| 100+ | 4.33 грн |
| 500+ | 3.82 грн |
| 3000+ | 3.44 грн |
| WM02N20G |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.84 грн |
| 52+ | 8.02 грн |
| 121+ | 3.44 грн |
| 173+ | 2.40 грн |
| 500+ | 2.15 грн |
| 3000+ | 1.70 грн |
| WM02P160R |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
On-state resistance: 17mΩ
Mounting: SMD
Pulsed drain current: -64A
Power dissipation: 6.5W
Gate charge: 28nC
Polarisation: unipolar
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
On-state resistance: 17mΩ
Mounting: SMD
Pulsed drain current: -64A
Power dissipation: 6.5W
Gate charge: 28nC
Polarisation: unipolar
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: DFN2020-6
на замовлення 770 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.42 грн |
| 34+ | 12.41 грн |
| 42+ | 9.93 грн |
| 100+ | 9.35 грн |
| 500+ | 8.27 грн |
| WM02P60M2 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2796 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.40 грн |
| 44+ | 9.43 грн |
| 74+ | 5.63 грн |
| 100+ | 5.05 грн |
| 500+ | 4.47 грн |
| WM03N115A |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.42 грн |
| 33+ | 12.57 грн |
| 41+ | 10.09 грн |
| 100+ | 9.60 грн |
| 500+ | 8.44 грн |
| WM03N57M |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2958 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.42 грн |
| 34+ | 12.41 грн |
| 79+ | 5.26 грн |
| 113+ | 3.68 грн |
| 500+ | 3.33 грн |
| WM03N58M |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2344 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.29 грн |
| 42+ | 9.93 грн |
| 98+ | 4.24 грн |
| 140+ | 2.96 грн |
| 500+ | 2.67 грн |
| WM03N58M2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2405 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.05 грн |
| 56+ | 7.45 грн |
| 133+ | 3.11 грн |
| 148+ | 2.80 грн |
| 500+ | 2.48 грн |
| WM04P56M2 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| WM05N02G |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.62 грн |
| 38+ | 11.09 грн |
| 83+ | 5.03 грн |
| 197+ | 2.10 грн |
| 500+ | 1.90 грн |
| WM05N02M |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.40 грн |
| 36+ | 11.50 грн |
| 109+ | 3.81 грн |
| 258+ | 1.60 грн |
| 500+ | 1.45 грн |
| 3000+ | 1.14 грн |
| WM05N03G |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.05 грн |
| 55+ | 7.53 грн |
| 128+ | 3.24 грн |
| 184+ | 2.26 грн |
| 500+ | 2.03 грн |
| 3000+ | 1.61 грн |
| WM05N03M |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2164 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.73 грн |
| 46+ | 9.18 грн |
| 99+ | 4.20 грн |
| 237+ | 1.75 грн |
| 500+ | 1.57 грн |
| WM05P20M |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.05 грн |
| 55+ | 7.53 грн |
| 132+ | 3.14 грн |
| 146+ | 2.84 грн |
| 500+ | 2.51 грн |
| 3000+ | 2.27 грн |
| WM06N03FB |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| WM06N03FE |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| WM06N03GE |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2940 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.40 грн |
| 41+ | 10.18 грн |
| 90+ | 4.63 грн |
| 214+ | 1.94 грн |
| 500+ | 1.75 грн |
| WM06N03HE |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| WM06N03LE |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.62 грн |
| 38+ | 11.00 грн |
| 83+ | 5.00 грн |
| 198+ | 2.09 грн |
| 500+ | 1.89 грн |
| WM06N03ME |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.