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WNSC5D10650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E25A3A7F00D6&compId=WNSC5D10650X6Q.pdf?ci_sign=9588ffa2d3df7bfc01135f9dabcf2a04b0610fad Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
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WNSC6D10650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E659D58A60D6&compId=WNSC6D10650X6Q.pdf?ci_sign=d80b4641eb96b398e37ffe4455f30148a1fe403c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: tube
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WNSC5D10650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E617F54FBBE0D6&compId=WNSC5D10650B6J.pdf?ci_sign=25c4f681e8fd73febb353320ede10bb957b903b4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 19A
Max. forward impulse current: 60A
Kind of package: reel; tape
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WNSC6D10650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA5859232A60D5&compId=WNSC6D10650B6J.pdf?ci_sign=cc7e7410db62bc7318d8fef1fb6d3b25debffb02 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
Max. forward voltage: 1.65V
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WNSC6D10650Q WNSC6D10650Q WeEn Semiconductors WNSC6D10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 75A
Kind of package: tube
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WNSC6D10650T6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E62AA91896E0D6&compId=WNSC6D10650T6J.pdf?ci_sign=d57ade27ac012577c88c72e4f6678c8a9b98fabc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: reel; tape
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WNSC6D10650Y6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E6478ABDA140D6&compId=WNSC6D10650Y6Q.pdf?ci_sign=75aabec9c12fc9ae099d83a44f4fc2f7bddf8822 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. load current: 18A
Max. forward impulse current: 75A
Kind of package: tube
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BYV29X-600,127 BYV29X-600,127 WeEn Semiconductors byv29x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 519 шт:
термін постачання 21-30 дні (днів)
8+56.26 грн
11+39.10 грн
25+32.13 грн
39+23.98 грн
107+22.64 грн
500+22.56 грн
Мінімальне замовлення: 8
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SMBJ60CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMDJ30AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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BUJ302AX,127 BUJ302AX,127 WeEn Semiconductors buj302ax.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 26W
Collector-emitter voltage: 400V
Polarisation: bipolar
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BUJ303B,127 BUJ303B,127 WeEn Semiconductors PHGLS23281-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 100W; TO220AB
Mounting: THT
Collector current: 5A
Current gain: 23...40
Power dissipation: 100W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
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BUJ303AD,118 WeEn Semiconductors buj303ad.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 80W; DPAK
Mounting: SMD
Collector current: 5A
Current gain: 14...35
Power dissipation: 80W
Collector-emitter voltage: 500V
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
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BUJ303AX,127 BUJ303AX,127 WeEn Semiconductors buj303ax.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 32W; TO220FP
Mounting: THT
Collector current: 5A
Current gain: 14...35
Power dissipation: 32W
Collector-emitter voltage: 500V
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
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BUJ303CD,118 WeEn Semiconductors buj303cd.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 80W; DPAK
Mounting: SMD
Collector current: 5A
Current gain: 28...57
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
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BYV29-600,127 BYV29-600,127 WeEn Semiconductors BYV29-600%2C127.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+213.09 грн
Мінімальне замовлення: 2
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BYV29B-500,118 BYV29B-500,118 WeEn Semiconductors byv29b-500.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600PJ BYV29B-600PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F223F63C9080CE&compId=BYV29B-600P.pdf?ci_sign=f5c8b965b2094004d1671c37d233310c1cff523b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
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BYV29F-600,127 BYV29F-600,127 WeEn Semiconductors byv29f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV29FX-600,127 BYV29FX-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E28AE8556E2259&compId=BYV29FX-600.pdf?ci_sign=3c1b83bb28395370b266503835f890d3700a6ae5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600,118 BYV29B-600,118 WeEn Semiconductors byv29b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29D-600PJ BYV29D-600PJ WeEn Semiconductors byv29d-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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BYV29FB-600,118 BYV29FB-600,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E235D52B67E259&compId=BYV29FB-600.pdf?ci_sign=e8e1d07f48cf8dae173ceb187b66e04496d8e03d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29FD-600,118 BYV29FD-600,118 WeEn Semiconductors byv29fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
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BYV29G-600,127 BYV29G-600,127 WeEn Semiconductors byv29g-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
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BT138X-800F,127 BT138X-800F,127 WeEn Semiconductors bt138x-800.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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P6SMBJ28CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BYV5ED-600PJ BYV5ED-600PJ WeEn Semiconductors BYV5ED-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 70A
Features of semiconductor devices: ultrafast switching
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BTA208X-1000C0,127 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BTA208X-1000C0/L01 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BT139-800E.127 BT139-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D6E43F36E259&compId=BT139-800E.pdf?ci_sign=bef01da168f172cb03f1b4b3ec4e7edbb4de50ca pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BYV34-500,127 BYV34-500,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27CDCE32E2259&compId=BYV34-500.pdf?ci_sign=15817b472341d6b648d1fd4cf558688ca98f26ed pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 60ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.87V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 132A
Max. off-state voltage: 500V
на замовлення 363 шт:
термін постачання 21-30 дні (днів)
4+114.22 грн
10+76.77 грн
21+45.11 грн
57+42.74 грн
Мінімальне замовлення: 4
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BYV34-400,127 BYV34-400,127 WeEn Semiconductors byv34-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.87V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 120A
Max. off-state voltage: 0.4kV
на замовлення 1405 шт:
термін постачання 21-30 дні (днів)
4+121.03 грн
10+80.41 грн
20+46.38 грн
55+43.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV32E-100,127 BYV32E-100,127 WeEn Semiconductors byv32e-100.pdf BYV32E-100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.85V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 100V
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
8+56.26 грн
9+44.32 грн
25+39.10 грн
28+33.72 грн
76+31.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYQ30E-200,127 BYQ30E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27721C3514259&compId=BYQ30E-200.pdf?ci_sign=5bfa4492d17aac958af24e39702e60b51820798c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.84V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 88A
Max. off-state voltage: 200V
на замовлення 994 шт:
термін постачання 21-30 дні (днів)
6+84.38 грн
10+50.89 грн
25+42.50 грн
38+24.93 грн
103+23.59 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYV32E-150,127 BYV32E-150,127 WeEn Semiconductors byv32e-150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.85V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 150V
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
8+56.26 грн
9+44.32 грн
25+39.10 грн
28+33.72 грн
76+31.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors byv42e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Max. forward voltage: 0.78V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 150V
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
5+100.58 грн
10+72.74 грн
19+49.23 грн
52+46.54 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV74W-400,127 BYV74W-400,127 WeEn Semiconductors byv74w-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 60ns
Max. forward voltage: 1.36V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 185A
Max. off-state voltage: 0.4kV
на замовлення 194 шт:
термін постачання 21-30 дні (днів)
5+79.94 грн
16+60.94 грн
42+57.78 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32EB-200,118 BYV32EB-200,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Semiconductor structure: common cathode; double
Case: D2PAK; SOT404
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.72V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 200V
на замовлення 787 шт:
термін постачання 21-30 дні (днів)
5+88.64 грн
10+63.87 грн
15+60.23 грн
25+55.80 грн
29+32.85 грн
78+31.03 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV72EW-200,127 BYV72EW-200,127 WeEn Semiconductors byv72ew-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Mounting: THT
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 28ns
Max. forward voltage: 1.2V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 185A
Max. off-state voltage: 200V
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)
4+136.38 грн
10+92.60 грн
16+60.15 грн
43+56.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV410X-600,127 BYV410X-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A988F0FAA7E86143&compId=BYV410X-600.pdf?ci_sign=fab362ab03afade2eb97fbde010637abc545f931 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.3V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 0.6kV
на замовлення 1456 шт:
термін постачання 21-30 дні (днів)
5+85.24 грн
6+70.44 грн
18+54.61 грн
47+51.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BT151X-800C,127 BT151X-800C,127 WeEn Semiconductors bt151x-800c.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Mounting: THT
Kind of package: tube
Load current: 7.5A
Max. load current: 12A
Max. forward impulse current: 100A
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Case: TO220FP
Gate current: 2mA
товару немає в наявності
В кошику  од. на суму  грн.
BTA330-800BTQ BTA330-800BTQ WeEn Semiconductors bta330-800bt.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 676 шт:
термін постачання 21-30 дні (днів)
5+83.10 грн
10+73.61 грн
15+64.11 грн
40+60.94 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA330Y-800BTQ BTA330Y-800BTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E375FE501A6259&compId=BTA330Y-800BT.pdf?ci_sign=5f3c5053a5ebef5316e881e7f0b2b12b8b54eb0c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
на замовлення 962 шт:
термін постачання 21-30 дні (днів)
3+184.96 грн
6+164.63 грн
16+155.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTA330X-800BTQ BTA330X-800BTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3D4E24AF78259&compId=BTA330X-800BT.pdf?ci_sign=2170751a1398f9fa7b96c7e37493a440350a4764 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
на замовлення 159 шт:
термін постачання 21-30 дні (днів)
4+109.10 грн
5+93.39 грн
14+70.44 грн
37+66.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BT234X-600E,127 WeEn Semiconductors bt234x-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Type of thyristor: triac
Gate current: 25mA
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BT234X-800D,127 WeEn Semiconductors bt234x-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BT234-800D,127 WeEn Semiconductors bt234-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BT139-800G.127 BT139-800G.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D9A87A704259&compId=BT139-800G.pdf?ci_sign=730d17cbd62026389a09ce9b950cc8b31e0da910 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
товару немає в наявності
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MUR560J MUR560J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD97D213092360C4&compId=MUR560.pdf?ci_sign=796a299cf6daedf45eb798a0e095ac2fbb72e325 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 4673 шт:
термін постачання 21-30 дні (днів)
11+41.77 грн
16+26.04 грн
92+10.21 грн
251+9.66 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BTA208S-800B,118 BTA208S-800B,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BA851CCE0259&compId=BTA208S-800B.pdf?ci_sign=ea3fc467ec030d7c6be7753fed7172ca79994f49 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA208X-800B/L02Q WeEn Semiconductors bta208x-800b.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
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BT137S-600D.118 BT137S-600D.118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911B8DD7B38259&compId=BT137S-600D.pdf?ci_sign=964b002a16fe852728e3a39cb35b27f8e5187d6f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
P6SMAL36AX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
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P6SMAL75AX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
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BYT28-300,127 BYT28-300,127 WeEn Semiconductors byt28-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 60ns
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BTA445Z-800BTQ WeEn Semiconductors bta445z-800ct.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 45A
Case: SOT1292; TO3P
Gate current: 50mA
Max. forward impulse current: 495A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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WNSC5D20650X6Q WNSC5D20650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA4120BF3480D5&compId=WNSC5D20650X6Q.pdf?ci_sign=321d8d1fae2a2526cf4826ff91f8107c7a320c22 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 80A
Kind of package: tube
Max. forward voltage: 2.2V
Max. load current: 40A
на замовлення 934 шт:
термін постачання 21-30 дні (днів)
3+178.99 грн
5+148.80 грн
9+114.76 грн
23+108.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF60287D9DB60C7&compId=WNS20S100CB.pdf?ci_sign=d8fdda0e275521bc549ae6917ce2513a7fa75ed2 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
9+49.44 грн
10+40.76 грн
25+36.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTA308Y-800C0TQ BTA308Y-800C0TQ WeEn Semiconductors bta308y-800c0t.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1553 шт:
термін постачання 21-30 дні (днів)
7+61.37 грн
13+31.50 грн
25+27.07 грн
39+23.90 грн
107+22.64 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
WNSC5D10650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E25A3A7F00D6&compId=WNSC5D10650X6Q.pdf?ci_sign=9588ffa2d3df7bfc01135f9dabcf2a04b0610fad
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
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WNSC6D10650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E659D58A60D6&compId=WNSC6D10650X6Q.pdf?ci_sign=d80b4641eb96b398e37ffe4455f30148a1fe403c
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: tube
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WNSC5D10650B6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E617F54FBBE0D6&compId=WNSC5D10650B6J.pdf?ci_sign=25c4f681e8fd73febb353320ede10bb957b903b4
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 19A
Max. forward impulse current: 60A
Kind of package: reel; tape
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WNSC6D10650B6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA5859232A60D5&compId=WNSC6D10650B6J.pdf?ci_sign=cc7e7410db62bc7318d8fef1fb6d3b25debffb02
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
Max. forward voltage: 1.65V
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WNSC6D10650Q WNSC6D10650.pdf
WNSC6D10650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 75A
Kind of package: tube
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WNSC6D10650T6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E62AA91896E0D6&compId=WNSC6D10650T6J.pdf?ci_sign=d57ade27ac012577c88c72e4f6678c8a9b98fabc
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: reel; tape
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WNSC6D10650Y6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E6478ABDA140D6&compId=WNSC6D10650Y6Q.pdf?ci_sign=75aabec9c12fc9ae099d83a44f4fc2f7bddf8822
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. load current: 18A
Max. forward impulse current: 75A
Kind of package: tube
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BYV29X-600,127 byv29x-600.pdf
BYV29X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 519 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.26 грн
11+39.10 грн
25+32.13 грн
39+23.98 грн
107+22.64 грн
500+22.56 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ60CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMDJ30AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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BUJ302AX,127 buj302ax.pdf
BUJ302AX,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 26W
Collector-emitter voltage: 400V
Polarisation: bipolar
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BUJ303B,127 PHGLS23281-1.pdf?t.download=true&u=5oefqw
BUJ303B,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 100W; TO220AB
Mounting: THT
Collector current: 5A
Current gain: 23...40
Power dissipation: 100W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
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BUJ303AD,118 buj303ad.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 80W; DPAK
Mounting: SMD
Collector current: 5A
Current gain: 14...35
Power dissipation: 80W
Collector-emitter voltage: 500V
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
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BUJ303AX,127 buj303ax.pdf
BUJ303AX,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 32W; TO220FP
Mounting: THT
Collector current: 5A
Current gain: 14...35
Power dissipation: 32W
Collector-emitter voltage: 500V
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
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BUJ303CD,118 buj303cd.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 80W; DPAK
Mounting: SMD
Collector current: 5A
Current gain: 28...57
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
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BYV29-600,127 BYV29-600%2C127.pdf
BYV29-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+213.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYV29B-500,118 byv29b-500.pdf
BYV29B-500,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600PJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F223F63C9080CE&compId=BYV29B-600P.pdf?ci_sign=f5c8b965b2094004d1671c37d233310c1cff523b
BYV29B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
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BYV29F-600,127 byv29f-600.pdf
BYV29F-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV29FX-600,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E28AE8556E2259&compId=BYV29FX-600.pdf?ci_sign=3c1b83bb28395370b266503835f890d3700a6ae5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29FX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600,118 byv29b-600.pdf
BYV29B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29D-600PJ byv29d-600p.pdf
BYV29D-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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BYV29FB-600,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E235D52B67E259&compId=BYV29FB-600.pdf?ci_sign=e8e1d07f48cf8dae173ceb187b66e04496d8e03d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29FB-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29FD-600,118 byv29fd-600.pdf
BYV29FD-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
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BYV29G-600,127 byv29g-600.pdf
BYV29G-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
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BT138X-800F,127 bt138x-800.pdf
BT138X-800F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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P6SMBJ28CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BYV5ED-600PJ BYV5ED-600P.pdf
BYV5ED-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 70A
Features of semiconductor devices: ultrafast switching
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BTA208X-1000C0,127 bta208x-1000c0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BTA208X-1000C0/L01 bta208x-1000c0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BT139-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D6E43F36E259&compId=BT139-800E.pdf?ci_sign=bef01da168f172cb03f1b4b3ec4e7edbb4de50ca pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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В кошику  од. на суму  грн.
BYV34-500,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27CDCE32E2259&compId=BYV34-500.pdf?ci_sign=15817b472341d6b648d1fd4cf558688ca98f26ed pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV34-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 60ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.87V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 132A
Max. off-state voltage: 500V
на замовлення 363 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.22 грн
10+76.77 грн
21+45.11 грн
57+42.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV34-400,127 byv34-400.pdf
BYV34-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.87V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 120A
Max. off-state voltage: 0.4kV
на замовлення 1405 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+121.03 грн
10+80.41 грн
20+46.38 грн
55+43.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV32E-100,127 byv32e-100.pdf BYV32E-100.pdf
BYV32E-100,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.85V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 100V
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.26 грн
9+44.32 грн
25+39.10 грн
28+33.72 грн
76+31.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYQ30E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27721C3514259&compId=BYQ30E-200.pdf?ci_sign=5bfa4492d17aac958af24e39702e60b51820798c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYQ30E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.84V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 88A
Max. off-state voltage: 200V
на замовлення 994 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+84.38 грн
10+50.89 грн
25+42.50 грн
38+24.93 грн
103+23.59 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYV32E-150,127 byv32e-150.pdf
BYV32E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. forward voltage: 0.85V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 150V
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.26 грн
9+44.32 грн
25+39.10 грн
28+33.72 грн
76+31.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYV42E-150,127 byv42e-200.pdf
BYV42E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Max. forward voltage: 0.78V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 150V
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+100.58 грн
10+72.74 грн
19+49.23 грн
52+46.54 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV74W-400,127 byv74w-400.pdf
BYV74W-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 60ns
Max. forward voltage: 1.36V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 185A
Max. off-state voltage: 0.4kV
на замовлення 194 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+79.94 грн
16+60.94 грн
42+57.78 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32EB-200,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Semiconductor structure: common cathode; double
Case: D2PAK; SOT404
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.72V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 200V
на замовлення 787 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.64 грн
10+63.87 грн
15+60.23 грн
25+55.80 грн
29+32.85 грн
78+31.03 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV72EW-200,127 byv72ew-200.pdf
BYV72EW-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Mounting: THT
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 28ns
Max. forward voltage: 1.2V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 185A
Max. off-state voltage: 200V
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+136.38 грн
10+92.60 грн
16+60.15 грн
43+56.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV410X-600,127 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A988F0FAA7E86143&compId=BYV410X-600.pdf?ci_sign=fab362ab03afade2eb97fbde010637abc545f931 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV410X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.3V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 137A
Max. off-state voltage: 0.6kV
на замовлення 1456 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.24 грн
6+70.44 грн
18+54.61 грн
47+51.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BT151X-800C,127 bt151x-800c.pdf
BT151X-800C,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Mounting: THT
Kind of package: tube
Load current: 7.5A
Max. load current: 12A
Max. forward impulse current: 100A
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Case: TO220FP
Gate current: 2mA
товару немає в наявності
В кошику  од. на суму  грн.
BTA330-800BTQ bta330-800bt.pdf
BTA330-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 676 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+83.10 грн
10+73.61 грн
15+64.11 грн
40+60.94 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA330Y-800BTQ pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E375FE501A6259&compId=BTA330Y-800BT.pdf?ci_sign=5f3c5053a5ebef5316e881e7f0b2b12b8b54eb0c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA330Y-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
на замовлення 962 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+184.96 грн
6+164.63 грн
16+155.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTA330X-800BTQ pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3D4E24AF78259&compId=BTA330X-800BT.pdf?ci_sign=2170751a1398f9fa7b96c7e37493a440350a4764 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA330X-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
на замовлення 159 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+109.10 грн
5+93.39 грн
14+70.44 грн
37+66.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BT234X-600E,127 bt234x-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Type of thyristor: triac
Gate current: 25mA
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BT234X-800D,127 bt234x-800d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BT234-800D,127 bt234-800d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BT139-800G.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D9A87A704259&compId=BT139-800G.pdf?ci_sign=730d17cbd62026389a09ce9b950cc8b31e0da910 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800G.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику  од. на суму  грн.
MUR560J pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD97D213092360C4&compId=MUR560.pdf?ci_sign=796a299cf6daedf45eb798a0e095ac2fbb72e325 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
MUR560J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 4673 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.77 грн
16+26.04 грн
92+10.21 грн
251+9.66 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BTA208S-800B,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BA851CCE0259&compId=BTA208S-800B.pdf?ci_sign=ea3fc467ec030d7c6be7753fed7172ca79994f49 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA208S-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA208X-800B/L02Q bta208x-800b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BT137S-600D.118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911B8DD7B38259&compId=BT137S-600D.pdf?ci_sign=964b002a16fe852728e3a39cb35b27f8e5187d6f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137S-600D.118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
товару немає в наявності
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P6SMAL36AX pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
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P6SMAL75AX pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товару немає в наявності
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BYT28-300,127 byt28-500.pdf
BYT28-300,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 60ns
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BTA445Z-800BTQ bta445z-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 45A
Case: SOT1292; TO3P
Gate current: 50mA
Max. forward impulse current: 495A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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WNSC5D20650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA4120BF3480D5&compId=WNSC5D20650X6Q.pdf?ci_sign=321d8d1fae2a2526cf4826ff91f8107c7a320c22
WNSC5D20650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 80A
Kind of package: tube
Max. forward voltage: 2.2V
Max. load current: 40A
на замовлення 934 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+178.99 грн
5+148.80 грн
9+114.76 грн
23+108.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
WNS20S100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF60287D9DB60C7&compId=WNS20S100CB.pdf?ci_sign=d8fdda0e275521bc549ae6917ce2513a7fa75ed2
WNS20S100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.44 грн
10+40.76 грн
25+36.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTA308Y-800C0TQ bta308y-800c0t.pdf
BTA308Y-800C0TQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1553 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+61.37 грн
13+31.50 грн
25+27.07 грн
39+23.90 грн
107+22.64 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
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