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NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
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BYV44-500,127 BYV44-500,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Max. off-state voltage: 500V
Max. load current: 30A
Max. forward voltage: 1.15V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Mounting: THT
на замовлення 890 шт:
термін постачання 21-30 дні (днів)
4+102.44 грн
10+89.45 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 4
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SMBJ40CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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MUR560J MUR560J WeEn Semiconductors MUR560.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 1639 шт:
термін постачання 21-30 дні (днів)
12+37.05 грн
17+22.55 грн
92+9.86 грн
253+9.33 грн
Мінімальне замовлення: 12
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BT1308W-400D,135 WeEn Semiconductors bt1308w-400d.pdf Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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BT1308W-600D,135 WeEn Semiconductors bt1308w-600d.pdf Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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MCR100W-10MF WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6 Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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ACTT6-800E,127 WeEn Semiconductors PHGL-S-A0001057229-1.pdf?t.download=true&u=5oefqw actt6-800e.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
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WNSC10650WQ WNSC10650WQ WeEn Semiconductors WNSC10650W_0.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
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WNSC12650WQ WNSC12650WQ WeEn Semiconductors WNSC12650W_2.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
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BTA425Z-800CTQ WeEn Semiconductors BTA425Z-800CT.pdf Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
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BTA425X-800BT/L02Q WeEn Semiconductors bta425x-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
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BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors bta425x-800b.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
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BTA425Y-800CTQ BTA425Y-800CTQ WeEn Semiconductors bta425y-800ct.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
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BT168E,112 BT168E,112 WeEn Semiconductors bt168e.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
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BYV32EB-200PJ BYV32EB-200PJ WeEn Semiconductors byv32eb-200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
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BYV32EB-300PJ BYV32EB-300PJ WeEn Semiconductors BYV32EB-300P.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
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WNS30H100CQ WNS30H100CQ WeEn Semiconductors WNS30H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
на замовлення 605 шт:
термін постачання 21-30 дні (днів)
8+52.69 грн
11+36.16 грн
29+31.50 грн
78+29.82 грн
250+28.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors WNS30H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
5+85.62 грн
10+58.48 грн
26+34.71 грн
71+32.80 грн
Мінімальне замовлення: 5
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WMSC030H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BTA201-800ER,126 BTA201-800ER,126 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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SMDJ58CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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BYV10X-600PQ BYV10X-600PQ WeEn Semiconductors byv10x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 88A
Kind of package: tube
Reverse recovery time: 50ns
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)
7+59.28 грн
10+44.80 грн
49+18.58 грн
134+17.58 грн
Мінімальне замовлення: 7
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BYV10-600PQ BYV10-600PQ WeEn Semiconductors byv10-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BYV10D-600PJ BYV10D-600PJ WeEn Semiconductors BYV10D-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 120A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BYV10ED-600PJ BYV10ED-600PJ WeEn Semiconductors byv10ed-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BYV10EX-600PQ BYV10EX-600PQ WeEn Semiconductors byv10ex-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BYV10MX-600PQ BYV10MX-600PQ WeEn Semiconductors BYV10MX-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BUJ105A,127 BUJ105A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
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BUJ105AD,118 WeEn Semiconductors buj105ad_1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
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BUJ105AB,118 WeEn Semiconductors buj105ab.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 125W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
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SMBJ78AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BTA201-800B,112 BTA201-800B,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800E,112 BTA201-800E,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,116 BTA201-800E,116 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 BTA201-800E,412 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800ER,112 BTA201-800ER,112 WeEn Semiconductors BTA201-800ER_112.pdf bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,116 BTA201-800ER,116 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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5.0SMDJ78CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BT153B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
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BT132-600D,116 BT132-600D,116 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
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BT132-600D,412 BT132-600D,412 WeEn Semiconductors bt132-600d.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
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TYN12B-600LTJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEB24B9E8260C0C4&compId=TYN12B-600LT.pdf?ci_sign=edb6673df5e709a511bdba5a23ca053fe6b60863 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; D2PAK; SMD; reel,tape
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Max. forward impulse current: 120A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
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SMCJ36CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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P6SMBJ28CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BT151X-800C,127 BT151X-800C,127 WeEn Semiconductors bt151x-800c.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
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TOPT16-800C0,127 TOPT16-800C0,127 WeEn Semiconductors topt16-800c0.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
5+77.98 грн
13+69.57 грн
25+68.80 грн
36+65.75 грн
100+63.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WNSC10650T6J WeEn Semiconductors WNSC10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC106506Q NXPSC106506Q WeEn Semiconductors nxpsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors nxpsc10650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors nxpsc10650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors nxpsc10650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
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NXPLQSC106506Q NXPLQSC106506Q WeEn Semiconductors nxplqsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 48A
Kind of package: tube
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BT153B-1200T-AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
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WNSC06650T6J WeEn Semiconductors WNSC06650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
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WNSC08650T6J WeEn Semiconductors WNSC08650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
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WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 57A
Kind of package: reel; tape
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WNSC5D06650T6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0F5B6FA6020D4&compId=WNSC5D06650T6J.pdf?ci_sign=af254bc2354266f10fcc72ad83d382ef9b42e6c3 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 36A
Kind of package: reel; tape
Max. forward voltage: 2.2V
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WNSC6D06650T6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D10A7DA25180D4&compId=WNSC6D06650T6J.pdf?ci_sign=6758f818888d7c91e977ded830e37bf03325b4ac Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 45A
Kind of package: reel; tape
Max. forward voltage: 1.55V
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NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
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BYV44-500,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV44-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Max. off-state voltage: 500V
Max. load current: 30A
Max. forward voltage: 1.15V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Mounting: THT
на замовлення 890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+102.44 грн
10+89.45 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SMBJ40CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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MUR560J MUR560.pdf _ween_psg2020.pdf
MUR560J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 1639 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.05 грн
17+22.55 грн
92+9.86 грн
253+9.33 грн
Мінімальне замовлення: 12
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BT1308W-400D,135 bt1308w-400d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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BT1308W-600D,135 bt1308w-600d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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MCR100W-10MF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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ACTT6-800E,127 PHGL-S-A0001057229-1.pdf?t.download=true&u=5oefqw actt6-800e.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
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WNSC10650WQ WNSC10650W_0.pdf
WNSC10650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
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WNSC12650WQ WNSC12650W_2.pdf
WNSC12650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
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BTA425Z-800CTQ BTA425Z-800CT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
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BTA425X-800BT/L02Q bta425x-800bt.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
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BTA425X-800BQ bta425x-800b.pdf
BTA425X-800BQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
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BTA425Y-800CTQ bta425y-800ct.pdf
BTA425Y-800CTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
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BT168E,112 bt168e.pdf
BT168E,112
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
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BYV32EB-200PJ byv32eb-200p.pdf
BYV32EB-200PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
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BYV32EB-300PJ BYV32EB-300P.pdf _ween_psg2020.pdf
BYV32EB-300PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
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WNS30H100CQ WNS30H100C.PDF
WNS30H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
на замовлення 605 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+52.69 грн
11+36.16 грн
29+31.50 грн
78+29.82 грн
250+28.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
WNS30H100CBJ WNS30H100CB.pdf
WNS30H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.62 грн
10+58.48 грн
26+34.71 грн
71+32.80 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WMSC030H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BTA201-800ER,126 bta201-800er.pdf
BTA201-800ER,126
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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SMDJ58CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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BYV10X-600PQ byv10x-600p.pdf
BYV10X-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 88A
Kind of package: tube
Reverse recovery time: 50ns
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+59.28 грн
10+44.80 грн
49+18.58 грн
134+17.58 грн
Мінімальне замовлення: 7
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BYV10-600PQ byv10-600p.pdf
BYV10-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BYV10D-600PJ BYV10D-600P.pdf
BYV10D-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 120A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BYV10ED-600PJ byv10ed-600p.pdf
BYV10ED-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BYV10EX-600PQ byv10ex-600p.pdf
BYV10EX-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BYV10MX-600PQ BYV10MX-600P.pdf
BYV10MX-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BUJ105A,127
BUJ105A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
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BUJ105AD,118 buj105ad_1.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
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BUJ105AB,118 buj105ab.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 125W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
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SMBJ78AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BTA201-800B,112 bta201-800e.pdf
BTA201-800B,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800E,112 bta201-800e.pdf
BTA201-800E,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,116 bta201-800e.pdf
BTA201-800E,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 bta201-800e.pdf
BTA201-800E,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800ER,112 BTA201-800ER_112.pdf bta201-800er.pdf
BTA201-800ER,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,116 bta201-800er.pdf
BTA201-800ER,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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5.0SMDJ78CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BT153B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
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BT132-600D,116
BT132-600D,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
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BT132-600D,412 bt132-600d.pdf
BT132-600D,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
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TYN12B-600LTJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEB24B9E8260C0C4&compId=TYN12B-600LT.pdf?ci_sign=edb6673df5e709a511bdba5a23ca053fe6b60863 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; D2PAK; SMD; reel,tape
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Max. forward impulse current: 120A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
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SMCJ36CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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P6SMBJ28CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BT151X-800C,127 bt151x-800c.pdf
BT151X-800C,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
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TOPT16-800C0,127 topt16-800c0.pdf
TOPT16-800C0,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+77.98 грн
13+69.57 грн
25+68.80 грн
36+65.75 грн
100+63.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WNSC10650T6J WNSC10650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC106506Q nxpsc10650.pdf
NXPSC106506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC10650B6J nxpsc10650b.pdf
NXPSC10650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J nxpsc10650d.pdf
NXPSC10650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q nxpsc10650x.pdf
NXPSC10650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
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NXPLQSC106506Q nxplqsc10650.pdf
NXPLQSC106506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 48A
Kind of package: tube
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BT153B-1200T-AJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
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WNSC06650T6J WNSC06650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
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WNSC08650T6J WNSC08650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
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WNSC12650T6J WNSC12650T_0.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 57A
Kind of package: reel; tape
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WNSC5D06650T6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0F5B6FA6020D4&compId=WNSC5D06650T6J.pdf?ci_sign=af254bc2354266f10fcc72ad83d382ef9b42e6c3
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 36A
Kind of package: reel; tape
Max. forward voltage: 2.2V
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WNSC6D06650T6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D10A7DA25180D4&compId=WNSC6D06650T6J.pdf?ci_sign=6758f818888d7c91e977ded830e37bf03325b4ac
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 45A
Kind of package: reel; tape
Max. forward voltage: 1.55V
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