Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6492) > Сторінка 105 з 109

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WNSC2M1K0170WQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D055A3D5E3A0D4&compId=WNSC2M1K0170WQ.pdf?ci_sign=d1d8e4445852bceaf5de17a3a44faf4d953af0dd Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M20120B76J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3CB6481A200D6&compId=WNSC2M20120B76J.pdf?ci_sign=7ea4931c87d847bdf0dca7a50c82cac3c19fc0df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYV42E-200,127 BYV42E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. forward voltage: 1V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
на замовлення 907 шт:
термін постачання 21-30 дні (днів)
5+98.02 грн
10+79.15 грн
19+49.86 грн
52+47.49 грн
Мінімальне замовлення: 5
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WNSC5D20650W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65101269260D6&compId=WNSC5D20650W6Q.pdf?ci_sign=63527af6dc2645ad87798c743de07c788f2a46a9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
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BYC8X-600P,127 BYC8X-600P,127 WeEn Semiconductors byc8x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Kind of package: tube
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
на замовлення 752 шт:
термін постачання 21-30 дні (днів)
7+66.48 грн
10+49.39 грн
25+43.77 грн
41+23.11 грн
111+21.84 грн
Мінімальне замовлення: 7
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BYC80MW-650PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCF01B76E3E0D6&compId=BYC80MW-650PT2Q.pdf?ci_sign=28c7e8e5210cdff9fdb2d9faa5c220d789124b80 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
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WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 479 шт:
термін постачання 21-30 дні (днів)
6+74.15 грн
10+50.10 грн
40+23.82 грн
108+22.56 грн
Мінімальне замовлення: 6
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BYC30MW-650PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB7F9103D9A0D6&compId=BYC30MW-650PT2.pdf?ci_sign=fa57dab85c14887008bc67828085f123d00b04ee Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
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BTA2008-800E,412 BTA2008-800E,412 WeEn Semiconductors PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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BTA2008-1000DNML WeEn Semiconductors bta2008-1000dn.pdf Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
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BTA2008-800D,412 WeEn Semiconductors bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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BYT79-500,127 BYT79-500,127 WeEn Semiconductors byt79-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
на замовлення 977 шт:
термін постачання 21-30 дні (днів)
8+56.26 грн
10+42.90 грн
25+35.30 грн
30+31.74 грн
81+30.00 грн
250+29.28 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA420-800CT,127 BTA420-800CT,127 WeEn Semiconductors bta420-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420X-800CT,127 BTA420X-800CT,127 WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420-800BT,127 WeEn Semiconductors bta420-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420Y-800BT,127 WeEn Semiconductors bta420y-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420X-800CT/L02Q WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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NXPSC04650Q NXPSC04650Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2961E4B34E259&compId=NXPSC04650.pdf?ci_sign=e9c051ee7b322030c5a68ad03dcf007e06e5002b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
6+76.71 грн
7+64.11 грн
15+62.53 грн
25+60.15 грн
Мінімальне замовлення: 6
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BT151X-650LTNQ BT151X-650LTNQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9688018A2BC0C4&compId=BT151X-650LTN.pdf?ci_sign=1ed6a1a58ca20f7b73dcb93edd4d70539c929d76 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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BT258-600R,127 BT258-600R,127 WeEn Semiconductors bt258-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Kind of package: tube
на замовлення 867 шт:
термін постачання 21-30 дні (днів)
7+61.37 грн
11+37.52 грн
49+19.23 грн
133+18.20 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors bt138b-600f.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WMSC008H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
On-state resistance: 8mΩ
Power dissipation: 244W
Drain current: 153A
Drain-source voltage: 1.2kV
Pulsed drain current: 300A
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BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA201-600B,112 BTA201-600B,112 WeEn Semiconductors bta201-600b.pdf BTA201-600B%2C112.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,112 BTA201-600E,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,126 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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MUR440J MUR440J WeEn Semiconductors MUR440.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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BYV44-500,127 BYV44-500,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 60ns
Heatsink thickness: max. 1.3mm
Max. forward voltage: 1.15V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 500V
на замовлення 884 шт:
термін постачання 21-30 дні (днів)
5+83.90 грн
10+69.65 грн
19+49.86 грн
52+47.49 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCR100W-10MF WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6 Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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BTA425Z-800CTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C3F27125BEE0C7&compId=BTA425Z-800CT.pdf?ci_sign=1a20e9965f1867914335ae424f74c46cabdfb99e Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BT168E,112 BT168E,112 WeEn Semiconductors bt168e.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
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WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88F4CE537300C7&compId=WNS30H100CB.pdf?ci_sign=fff43d3e7cd0a0f80aba86033199a9360fbcee18 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
4+110.81 грн
10+65.38 грн
26+35.85 грн
72+33.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA201-800ER,126 BTA201-800ER,126 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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BTA201-800B,112 BTA201-800B,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800E,112 BTA201-800E,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,116 BTA201-800E,116 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 BTA201-800E,412 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800ER,112 BTA201-800ER,112 WeEn Semiconductors BTA201-800ER_112.pdf bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,116 BTA201-800ER,116 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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WMSC010H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
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SMCJ40CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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ACT108-600D,126 WeEn Semiconductors act108-600d.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
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BT258S-800R,118 BT258S-800R,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)
5+88.64 грн
10+52.16 грн
25+43.85 грн
53+17.81 грн
144+16.86 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BT258S-800LT,118 BT258S-800LT,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)
6+83.53 грн
10+52.40 грн
47+19.95 грн
129+18.84 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BT258-500R,127 BT258-500R,127 WeEn Semiconductors bt258-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 500V
Kind of package: tube
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
7+62.22 грн
10+47.41 грн
54+17.33 грн
148+16.38 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BT258X-500R,127 BT258X-500R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258U-600R,127 BT258U-600R,127 WeEn Semiconductors bt258u-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
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BT258X-600R,127 BT258X-600R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258X-800R,127 BT258X-800R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BYQ28E-200,127 BYQ28E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
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BTA204-800E.127 BTA204-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYQ28ED-200,118 BYQ28ED-200,118 WeEn Semiconductors byq28ed-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
на замовлення 2107 шт:
термін постачання 21-30 дні (днів)
10+42.62 грн
12+34.35 грн
42+22.24 грн
115+21.05 грн
1000+20.26 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BT138X-600E,127 BT138X-600E,127 WeEn Semiconductors BT138X-600E.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138Y-600E,127 BT138Y-600E,127 WeEn Semiconductors bt138y-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WNSC2M40120B76J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3E947F16B40D6&compId=WNSC2M40120B76J.pdf?ci_sign=c11ee965fc61918e556c00ce9e3628da5665c159 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYC100W-1200PQ BYC100W-1200PQ WeEn Semiconductors BYC100W-1200PQ_DS.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.9kA
Kind of package: tube
Reverse recovery time: 115ns
Features of semiconductor devices: superfast switching
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WNSC2M1K0170WQ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D055A3D5E3A0D4&compId=WNSC2M1K0170WQ.pdf?ci_sign=d1d8e4445852bceaf5de17a3a44faf4d953af0dd
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M20120B76J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3CB6481A200D6&compId=WNSC2M20120B76J.pdf?ci_sign=7ea4931c87d847bdf0dca7a50c82cac3c19fc0df
Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYV42E-200,127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2
BYV42E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. forward voltage: 1V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
на замовлення 907 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+98.02 грн
10+79.15 грн
19+49.86 грн
52+47.49 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WNSC5D20650W6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65101269260D6&compId=WNSC5D20650W6Q.pdf?ci_sign=63527af6dc2645ad87798c743de07c788f2a46a9
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
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BYC8X-600P,127 byc8x-600p.pdf
BYC8X-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Kind of package: tube
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
на замовлення 752 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.48 грн
10+49.39 грн
25+43.77 грн
41+23.11 грн
111+21.84 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYC80MW-650PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCF01B76E3E0D6&compId=BYC80MW-650PT2Q.pdf?ci_sign=28c7e8e5210cdff9fdb2d9faa5c220d789124b80
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
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WNS20H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8
WNS20H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 479 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.15 грн
10+50.10 грн
40+23.82 грн
108+22.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYC30MW-650PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB7F9103D9A0D6&compId=BYC30MW-650PT2.pdf?ci_sign=fa57dab85c14887008bc67828085f123d00b04ee
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
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BTA2008-800E,412 PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf
BTA2008-800E,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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BTA2008-1000DNML bta2008-1000dn.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
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BTA2008-800D,412 bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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BYT79-500,127 byt79-500.pdf
BYT79-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
на замовлення 977 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.26 грн
10+42.90 грн
25+35.30 грн
30+31.74 грн
81+30.00 грн
250+29.28 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA420-800CT,127 bta420-800ct.pdf
BTA420-800CT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420X-800CT,127 bta420x-800ct.pdf
BTA420X-800CT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420-800BT,127 bta420-800bt.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420Y-800BT,127 bta420y-800bt.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420X-800CT/L02Q bta420x-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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NXPSC04650Q pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2961E4B34E259&compId=NXPSC04650.pdf?ci_sign=e9c051ee7b322030c5a68ad03dcf007e06e5002b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC04650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.71 грн
7+64.11 грн
15+62.53 грн
25+60.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BT151X-650LTNQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9688018A2BC0C4&compId=BT151X-650LTN.pdf?ci_sign=1ed6a1a58ca20f7b73dcb93edd4d70539c929d76 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT151X-650LTNQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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BT258-600R,127 bt258-600r.pdf
BT258-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Kind of package: tube
на замовлення 867 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+61.37 грн
11+37.52 грн
49+19.23 грн
133+18.20 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BT138B-600F,118 bt138b-600f.pdf
BT138B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WMSC008H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
On-state resistance: 8mΩ
Power dissipation: 244W
Drain current: 153A
Drain-source voltage: 1.2kV
Pulsed drain current: 300A
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BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA201-600B,112 bta201-600b.pdf BTA201-600B%2C112.pdf
BTA201-600B,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,112 bta201-600b.pdf
BTA201-600E,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,126 bta201-600b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E/L01EP bta201-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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MUR440J MUR440.pdf
MUR440J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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BYV44-500,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV44-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 60ns
Heatsink thickness: max. 1.3mm
Max. forward voltage: 1.15V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 500V
на замовлення 884 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+83.90 грн
10+69.65 грн
19+49.86 грн
52+47.49 грн
Мінімальне замовлення: 5
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MCR100W-10MF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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BTA425Z-800CTQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C3F27125BEE0C7&compId=BTA425Z-800CT.pdf?ci_sign=1a20e9965f1867914335ae424f74c46cabdfb99e
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BT168E,112 bt168e.pdf
BT168E,112
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
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WNS30H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88F4CE537300C7&compId=WNS30H100CB.pdf?ci_sign=fff43d3e7cd0a0f80aba86033199a9360fbcee18
WNS30H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+110.81 грн
10+65.38 грн
26+35.85 грн
72+33.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA201-800ER,126 bta201-800er.pdf
BTA201-800ER,126
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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BTA201-800B,112 bta201-800e.pdf
BTA201-800B,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800E,112 bta201-800e.pdf
BTA201-800E,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,116 bta201-800e.pdf
BTA201-800E,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 bta201-800e.pdf
BTA201-800E,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA201-800ER,112 BTA201-800ER_112.pdf bta201-800er.pdf
BTA201-800ER,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,116 bta201-800er.pdf
BTA201-800ER,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
товару немає в наявності
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WMSC010H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
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SMCJ40CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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ACT108-600D,126 act108-600d.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
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BT258S-800R,118 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800R,118
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.64 грн
10+52.16 грн
25+43.85 грн
53+17.81 грн
144+16.86 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BT258S-800LT,118 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800LT,118
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+83.53 грн
10+52.40 грн
47+19.95 грн
129+18.84 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BT258-500R,127 bt258-500r.pdf
BT258-500R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 500V
Kind of package: tube
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+62.22 грн
10+47.41 грн
54+17.33 грн
148+16.38 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BT258X-500R,127 bt258x-500r.pdf
BT258X-500R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258U-600R,127 bt258u-600r.pdf
BT258U-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
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BT258X-600R,127 bt258x-500r.pdf
BT258X-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258X-800R,127 bt258x-500r.pdf
BT258X-800R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BYQ28E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYQ28E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
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BTA204-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA204-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYQ28ED-200,118 byq28ed-200.pdf
BYQ28ED-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
на замовлення 2107 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.62 грн
12+34.35 грн
42+22.24 грн
115+21.05 грн
1000+20.26 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BT138X-600E,127 BT138X-600E.pdf
BT138X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138Y-600E,127 bt138y-600e.pdf
BT138Y-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WNSC2M40120B76J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3E947F16B40D6&compId=WNSC2M40120B76J.pdf?ci_sign=c11ee965fc61918e556c00ce9e3628da5665c159
Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYC100W-1200PQ BYC100W-1200PQ_DS.pdf
BYC100W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.9kA
Kind of package: tube
Reverse recovery time: 115ns
Features of semiconductor devices: superfast switching
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