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BTA201-600E,112 BTA201-600E,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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BTA201-600E,126 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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BTA330-800BTQ BTA330-800BTQ WeEn Semiconductors bta330-800bt.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
5+80.27 грн
10+71.10 грн
15+61.92 грн
40+58.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA330X-800BTQ BTA330X-800BTQ WeEn Semiconductors BTA330X-800BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
4+105.38 грн
5+90.21 грн
14+68.04 грн
37+64.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA330Y-800BTQ BTA330Y-800BTQ WeEn Semiconductors BTA330Y-800BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
2+223.11 грн
5+191.89 грн
6+159.01 грн
16+149.84 грн
100+144.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
WNS40H100CGQ WNS40H100CGQ WeEn Semiconductors _ween_psg2020.pdf WNS40H100CG.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
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WSJM65R170XQ WeEn Semiconductors WSJM65R170XQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HD
Version: ESD
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BYQ28ED-200,118 BYQ28ED-200,118 WeEn Semiconductors byq28ed-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
9+49.40 грн
10+39.45 грн
40+22.32 грн
110+21.10 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC5B-600,118 BYC5B-600,118 WeEn Semiconductors byc5b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
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BYV25D-600,118 BYV25D-600,118 WeEn Semiconductors byv25d-600.pdf BYV25D-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Reverse recovery time: 50ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.11V
Load current: 5A
Semiconductor structure: single diode
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BYV29B-500,118 BYV29B-500,118 WeEn Semiconductors byv29b-500.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV29B-600,118 BYV29B-600,118 WeEn Semiconductors byv29b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV25FB-600,118 BYV25FB-600,118 WeEn Semiconductors byv25fb-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV25FD-600,118 BYV25FD-600,118 WeEn Semiconductors byv25fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV29FB-600,118 BYV29FB-600,118 WeEn Semiconductors BYV29FB-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
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MUR440J MUR440J WeEn Semiconductors MUR440.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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WNSC6D30650W6Q WeEn Semiconductors WNSC6D30650W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
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NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
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BYV44-500,127 BYV44-500,127 WeEn Semiconductors BYV44_SERIES.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 893 шт:
термін постачання 21-30 дні (днів)
4+102.44 грн
10+89.45 грн
19+48.16 грн
52+45.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SMBJ40CAJ WeEn Semiconductors SMBJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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MUR560J MUR560J WeEn Semiconductors MUR560.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 1648 шт:
термін постачання 21-30 дні (днів)
12+37.05 грн
17+22.55 грн
91+9.86 грн
250+9.33 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BT1308W-400D,135 WeEn Semiconductors bt1308w-400d.pdf Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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BT1308W-600D,135 WeEn Semiconductors bt1308w-600d.pdf Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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BT136-600E BT136-600E WeEn Semiconductors BT136-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BTA201-600E,112 bta201-600b.pdf
BTA201-600E,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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BTA201-600E,126 bta201-600b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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BTA201-600E/L01EP bta201-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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BTA330-800BTQ bta330-800bt.pdf
BTA330-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+80.27 грн
10+71.10 грн
15+61.92 грн
40+58.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA330X-800BTQ BTA330X-800BT.pdf _ween_psg2020.pdf
BTA330X-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+105.38 грн
5+90.21 грн
14+68.04 грн
37+64.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA330Y-800BTQ BTA330Y-800BT.pdf _ween_psg2020.pdf
BTA330Y-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+223.11 грн
5+191.89 грн
6+159.01 грн
16+149.84 грн
100+144.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
WNS40H100CGQ _ween_psg2020.pdf WNS40H100CG.pdf
WNS40H100CGQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
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WSJM65R170XQ WSJM65R170XQ.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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ESDHD03UFX ESDHDxxUF%20Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HD
Version: ESD
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BYQ28ED-200,118 byq28ed-200.pdf
BYQ28ED-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.40 грн
10+39.45 грн
40+22.32 грн
110+21.10 грн
Мінімальне замовлення: 9
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BYC5B-600,118 byc5b-600.pdf
BYC5B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
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BYV25D-600,118 byv25d-600.pdf BYV25D-600.pdf
BYV25D-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Reverse recovery time: 50ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.11V
Load current: 5A
Semiconductor structure: single diode
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BYV29B-500,118 byv29b-500.pdf
BYV29B-500,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV29B-600,118 byv29b-600.pdf
BYV29B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV25FB-600,118 byv25fb-600.pdf
BYV25FB-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV25FD-600,118 byv25fd-600.pdf
BYV25FD-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV29FB-600,118 BYV29FB-600.pdf _ween_psg2020.pdf
BYV29FB-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
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MUR440J MUR440.pdf
MUR440J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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WNSC6D30650W6Q WNSC6D30650W6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
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NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
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BYV44-500,127 BYV44_SERIES.pdf _ween_psg2020.pdf
BYV44-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 893 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+102.44 грн
10+89.45 грн
19+48.16 грн
52+45.10 грн
Мінімальне замовлення: 4
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SMBJ40CAJ SMBJ Series.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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MUR560J MUR560.pdf _ween_psg2020.pdf
MUR560J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 1648 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.05 грн
17+22.55 грн
91+9.86 грн
250+9.33 грн
Мінімальне замовлення: 12
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BT1308W-400D,135 bt1308w-400d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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BT1308W-600D,135 bt1308w-600d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
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BT136-600E BT136-600E.pdf _ween_psg2020.pdf
BT136-600E
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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