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BTA208X-800E,127 BTA208X-800E,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 842 шт:
термін постачання 21-30 дні (днів)
10+42.62 грн
12+34.67 грн
25+31.50 грн
35+26.67 грн
96+25.25 грн
250+24.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
WNSC2D201200CWQ WNSC2D201200CWQ WeEn Semiconductors WNSC2D201200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D201200WQ WNSC2D201200WQ WeEn Semiconductors WNSC2D201200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.1V
Load current: 20A
Max. forward impulse current: 125A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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BYC10-600CT,127 BYC10-600CT,127 WeEn Semiconductors byc10-600ct.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
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BTA225B-600B,118 BTA225B-600B,118 WeEn Semiconductors bta225-800b_0.pdf Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
на замовлення 4819 шт:
термін постачання 21-30 дні (днів)
5+101.43 грн
10+79.15 грн
17+57.78 грн
45+54.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMBJ20AJ SMBJ20AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 510 шт:
термін постачання 21-30 дні (днів)
40+11.25 грн
65+6.41 грн
100+5.62 грн
175+5.46 грн
475+5.14 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BT158W-1200TQ BT158W-1200TQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5BB8390B300C4&compId=BT158W-1200T.pdf?ci_sign=0be78cecbf191f580d41fd859d340d6ab23e9894 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
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BYC10-600PQ BYC10-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
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BT155W-1200T-AQ BT155W-1200T-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB82531EE984E3D517D43DF8BF&compId=BT155W-1200T-AQ.pdf?ci_sign=c4bc0c1fd7312891e3ce5b9c6d8fc8a176ee1c81 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
2+272.75 грн
6+170.17 грн
16+160.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYV29-500.127 BYV29-500.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782927DD10852E259&compId=BYV29-500.pdf?ci_sign=6d4f8c2dc96de48461cdca88e7800f331acfaeab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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BT138-800.127 BT138-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913354B9BEC259&compId=BT138-800.pdf?ci_sign=6546816a721ed8a0105c351640820c3fe112c8f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
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BT137-600.127 BT137-600.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782910B1F4FD9E259&compId=BT137-600.pdf?ci_sign=f59cdb9331dd6e14c938835c311b2659081d7574 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT137-800.127 BT137-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911337BBCF4259&compId=BT137-800.pdf?ci_sign=aea56d424bc4f3fa2aa1ddbd11ef61522575e165 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
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BT139-600.127 BT139-600.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291CEDEE6554259&compId=BT139-600.pdf?ci_sign=7e38b3ee79c9fed25b529b7891041bacf08a60fd pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT134-600E.127 BT134-600E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290E1820008A259&compId=BT134-600E.pdf?ci_sign=b519900035b47ed00cea8adbde36afb6e018d99b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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WNSC2D151200WQ WNSC2D151200WQ WeEn Semiconductors WNSC2D151200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.95V
Load current: 15A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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BT137X-800.127 BT137X-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829128487C3A8259&compId=BT137X-800.pdf?ci_sign=b9cbdc731775311365e000e4ca1a56829f489d0d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
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BT136-600 BT136-600 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290EB2BA9BE6259&compId=BT136-600.pdf?ci_sign=6c77c6b982881e43deeb51b3edb1a858751ff5f5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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BT131-600 BT131-600 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290D888568D4259&compId=BT131-600.pdf?ci_sign=45a0d2be925eb7f2b5e1a8061c9649a2c35dca72 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 description Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B89004606ABC0C7&compId=WNS40H100CB.pdf?ci_sign=961831982c9ddb562ec774f452b9d74d73f10f9e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
5+103.99 грн
10+84.61 грн
23+41.39 грн
62+39.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NXPSC04650B NXPSC04650B WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED8808355243183EA18&compId=NXPSC04650B.pdf?ci_sign=2fe46987e1cc9423a6afd4be2cd0aa28fc50fd4e pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
10+45.17 грн
11+38.78 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D04650Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0705D960780D4&compId=WNSC2D04650Q.pdf?ci_sign=bcd58e96945379d399835a8c48f5d5874319942a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.2V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D04650TJ WeEn Semiconductors WNSC2D04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D04650XQ WNSC2D04650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Load current: 4A
Max. forward impulse current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WG40N65DFJQ WeEn Semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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BT152B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBB109BA6FC0D6&compId=BT152B-1200T.pdf?ci_sign=756dcc01a8cfa37cf0faef7b98c85d9700042970 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
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WG50N65HFW1Q WeEn Semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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WTMH80T16RT WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CD1D27D29A80D6&compId=WTMH80T16RT.pdf?ci_sign=8217bcbfa29216c06ea12d905ff101eb7d3ce6f1 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BT155Z-1200TQ BT155Z-1200TQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5A14375AD80C4&compId=BT155Z-1200T.pdf?ci_sign=da4f4f9ecf8e5cfccc64c6bda46fa187f39dd2c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 491 шт:
термін постачання 21-30 дні (днів)
2+218.20 грн
5+165.42 грн
7+139.30 грн
19+131.38 грн
90+128.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
WNSC2D021200D6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E584D944DF20D6&compId=WNSC2D021200D6J.pdf?ci_sign=d6261fd7b0f83655de65a5e039306fe7b124e371 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 26A
Kind of package: reel; tape
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WNSC2D051200D6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5906FDDC0C0D6&compId=WNSC2D051200D6J.pdf?ci_sign=80c84dac35b55dc0462d2ea5379a10d827c08a22 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. load current: 10A
Max. forward impulse current: 45A
Kind of package: reel; tape
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WNSC2D101200D6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5998DB1E0A0D6&compId=WNSC2D101200D6J.pdf?ci_sign=bf48ebe83c665505a71c4440ee63a1d8fad27840 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
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WNSC2D201200CW6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E67180955F60D6&compId=WNSC2D201200CW6Q.pdf?ci_sign=92383b216d2d5daed1994f8c6b0f95a12d5589c9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WSJM65R099DQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E35F3F2C7140D6&compId=WSJM65R099DQ.pdf?ci_sign=3a234b4c4562c2a8dca11ae94957239c205d3640 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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WSJM65R099DTLJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3627BC55640D6&compId=WSJM65R099DTLJ.pdf?ci_sign=e9d7328c240f8c39d9b26d105a04afbcc3690ae4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BT136X-600E/DG,127 WeEn Semiconductors bt136x-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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MAC97A8/DG,412 WeEn Semiconductors PHGLS28890-1.pdf?t.download=true&u=5oefqw mac97a8.pdf Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BT139-600-0TQ WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT139-600G0TQ WeEn Semiconductors bt139-600g0t.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT138-600-0TQ WeEn Semiconductors bt138-600g0t.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138-600/DG,127 WeEn Semiconductors BT138-800.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT139X-600F/DG,127 WeEn Semiconductors bt139x-600f.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204X-800C/L03Q WeEn Semiconductors bta204x-800c.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212X-600B,127 WeEn Semiconductors bta212x-600b.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212X-600E,127 WeEn Semiconductors bta212x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212X-600F,127 WeEn Semiconductors bta212x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212B-600E,118 BTA212B-600E,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 650 шт:
термін постачання 21-30 дні (днів)
9+47.73 грн
11+37.36 грн
25+32.93 грн
100+31.74 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTA212-600B,127 BTA212-600B,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212B-600B,118 WeEn Semiconductors bta212b-800b.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA212B-600D,118 WeEn Semiconductors bta212b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA212B-600F,118 WeEn Semiconductors bta212b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA416X-800CTQ WeEn Semiconductors BTA416X-800CT.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA410-800BT,127 WeEn Semiconductors bta410-800bt.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
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BTA416X-800BTQ WeEn Semiconductors BTA416X-800BT.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA408X-1000C0T,127 WeEn Semiconductors BTA408X-1000C0T.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BT134W-800EF BT134W-800EF WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1FD084A56EA408A420DC&compId=BT134W-800E.pdf?ci_sign=4d7efed631b60b333dba6c3c4072e8a063998ce2 Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3700 шт:
термін постачання 21-30 дні (днів)
8+54.55 грн
15+27.23 грн
85+11.00 грн
233+10.37 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMAJ5.0CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9E918179D00D5&compId=SMAJ%20Series.pdf?ci_sign=02ff97b748452aeefee6ed770587255daaa32026 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.4mA
Manufacturer series: SMAJ
Kind of package: reel; tape
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BT138Y-800E,127 BT138Y-800E,127 WeEn Semiconductors bt138y-800e.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
8+57.11 грн
10+39.65 грн
32+29.76 грн
86+28.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BT136-600D/DG,127 WeEn Semiconductors bt136-600d.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-800E,127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA208X-800E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 842 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.62 грн
12+34.67 грн
25+31.50 грн
35+26.67 грн
96+25.25 грн
250+24.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
WNSC2D201200CWQ WNSC2D201200CW.pdf
WNSC2D201200CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D201200WQ WNSC2D201200W.pdf
WNSC2D201200WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.1V
Load current: 20A
Max. forward impulse current: 125A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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BYC10-600CT,127 byc10-600ct.pdf
BYC10-600CT,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
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BTA225B-600B,118 bta225-800b_0.pdf
BTA225B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
на замовлення 4819 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+101.43 грн
10+79.15 грн
17+57.78 грн
45+54.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMBJ20AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
SMBJ20AJ
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 510 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
40+11.25 грн
65+6.41 грн
100+5.62 грн
175+5.46 грн
475+5.14 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BT158W-1200TQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5BB8390B300C4&compId=BT158W-1200T.pdf?ci_sign=0be78cecbf191f580d41fd859d340d6ab23e9894 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT158W-1200TQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
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BYC10-600PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f
BYC10-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
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BT155W-1200T-AQ pVersion=0046&contRep=ZT&docId=005056AB82531EE984E3D517D43DF8BF&compId=BT155W-1200T-AQ.pdf?ci_sign=c4bc0c1fd7312891e3ce5b9c6d8fc8a176ee1c81 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT155W-1200T-AQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+272.75 грн
6+170.17 грн
16+160.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYV29-500.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782927DD10852E259&compId=BYV29-500.pdf?ci_sign=6d4f8c2dc96de48461cdca88e7800f331acfaeab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29-500.127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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BT138-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913354B9BEC259&compId=BT138-800.pdf?ci_sign=6546816a721ed8a0105c351640820c3fe112c8f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT138-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
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BT137-600.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782910B1F4FD9E259&compId=BT137-600.pdf?ci_sign=f59cdb9331dd6e14c938835c311b2659081d7574 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137-600.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT137-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911337BBCF4259&compId=BT137-800.pdf?ci_sign=aea56d424bc4f3fa2aa1ddbd11ef61522575e165 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
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BT139-600.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291CEDEE6554259&compId=BT139-600.pdf?ci_sign=7e38b3ee79c9fed25b529b7891041bacf08a60fd pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-600.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT134-600E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290E1820008A259&compId=BT134-600E.pdf?ci_sign=b519900035b47ed00cea8adbde36afb6e018d99b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT134-600E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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WNSC2D151200WQ WNSC2D151200W.pdf
WNSC2D151200WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.95V
Load current: 15A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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BT137X-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829128487C3A8259&compId=BT137X-800.pdf?ci_sign=b9cbdc731775311365e000e4ca1a56829f489d0d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137X-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
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BT136-600 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290EB2BA9BE6259&compId=BT136-600.pdf?ci_sign=6c77c6b982881e43deeb51b3edb1a858751ff5f5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-600
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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BT131-600 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290D888568D4259&compId=BT131-600.pdf?ci_sign=45a0d2be925eb7f2b5e1a8061c9649a2c35dca72 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT131-600
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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WNS40H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B89004606ABC0C7&compId=WNS40H100CB.pdf?ci_sign=961831982c9ddb562ec774f452b9d74d73f10f9e
WNS40H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+103.99 грн
10+84.61 грн
23+41.39 грн
62+39.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NXPSC04650B pVersion=0046&contRep=ZT&docId=005056AB752F1ED8808355243183EA18&compId=NXPSC04650B.pdf?ci_sign=2fe46987e1cc9423a6afd4be2cd0aa28fc50fd4e pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC04650B
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.17 грн
11+38.78 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D04650Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0705D960780D4&compId=WNSC2D04650Q.pdf?ci_sign=bcd58e96945379d399835a8c48f5d5874319942a
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.2V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D04650TJ WNSC2D04650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D04650XQ
WNSC2D04650XQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Load current: 4A
Max. forward impulse current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WG40N65DFJQ
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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BT152B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBB109BA6FC0D6&compId=BT152B-1200T.pdf?ci_sign=756dcc01a8cfa37cf0faef7b98c85d9700042970
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
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WG50N65HFW1Q
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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WTMH80T16RT pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CD1D27D29A80D6&compId=WTMH80T16RT.pdf?ci_sign=8217bcbfa29216c06ea12d905ff101eb7d3ce6f1
Виробник: WeEn Semiconductors
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BT155Z-1200TQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5A14375AD80C4&compId=BT155Z-1200T.pdf?ci_sign=da4f4f9ecf8e5cfccc64c6bda46fa187f39dd2c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT155Z-1200TQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 491 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+218.20 грн
5+165.42 грн
7+139.30 грн
19+131.38 грн
90+128.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
WNSC2D021200D6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E584D944DF20D6&compId=WNSC2D021200D6J.pdf?ci_sign=d6261fd7b0f83655de65a5e039306fe7b124e371
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 26A
Kind of package: reel; tape
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WNSC2D051200D6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5906FDDC0C0D6&compId=WNSC2D051200D6J.pdf?ci_sign=80c84dac35b55dc0462d2ea5379a10d827c08a22
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. load current: 10A
Max. forward impulse current: 45A
Kind of package: reel; tape
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WNSC2D101200D6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5998DB1E0A0D6&compId=WNSC2D101200D6J.pdf?ci_sign=bf48ebe83c665505a71c4440ee63a1d8fad27840
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
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WNSC2D201200CW6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E67180955F60D6&compId=WNSC2D201200CW6Q.pdf?ci_sign=92383b216d2d5daed1994f8c6b0f95a12d5589c9
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WSJM65R099DQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E35F3F2C7140D6&compId=WSJM65R099DQ.pdf?ci_sign=3a234b4c4562c2a8dca11ae94957239c205d3640
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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WSJM65R099DTLJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3627BC55640D6&compId=WSJM65R099DTLJ.pdf?ci_sign=e9d7328c240f8c39d9b26d105a04afbcc3690ae4
Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BT136X-600E/DG,127 bt136x-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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MAC97A8/DG,412 PHGLS28890-1.pdf?t.download=true&u=5oefqw mac97a8.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BT139-600-0TQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT139-600G0TQ bt139-600g0t.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT138-600-0TQ bt138-600g0t.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138-600/DG,127 BT138-800.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT139X-600F/DG,127 bt139x-600f.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204X-800C/L03Q bta204x-800c.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212X-600B,127 bta212x-600b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212X-600E,127 bta212x-600d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212X-600F,127 bta212x-600d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212B-600E,118 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA212B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 650 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.73 грн
11+37.36 грн
25+32.93 грн
100+31.74 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTA212-600B,127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA212-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA212B-600B,118 bta212b-800b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA212B-600D,118 bta212b-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA212B-600F,118 bta212b-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA416X-800CTQ BTA416X-800CT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA410-800BT,127 bta410-800bt.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
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BTA416X-800BTQ BTA416X-800BT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA408X-1000C0T,127 BTA408X-1000C0T.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BT134W-800EF pVersion=0046&contRep=ZT&docId=005056AB281E1FD084A56EA408A420DC&compId=BT134W-800E.pdf?ci_sign=4d7efed631b60b333dba6c3c4072e8a063998ce2
BT134W-800EF
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.55 грн
15+27.23 грн
85+11.00 грн
233+10.37 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMAJ5.0CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9E918179D00D5&compId=SMAJ%20Series.pdf?ci_sign=02ff97b748452aeefee6ed770587255daaa32026
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.4mA
Manufacturer series: SMAJ
Kind of package: reel; tape
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BT138Y-800E,127 bt138y-800e.pdf
BT138Y-800E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.11 грн
10+39.65 грн
32+29.76 грн
86+28.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BT136-600D/DG,127 bt136-600d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
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