Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6266) > Сторінка 103 з 105

Обрати Сторінку:   [  << Попередня Сторінка ]  1 10 20 30 40 50 60 70 80 90 98 99 100 101 102 103 104 105  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
BYW29ED-200,118 BYW29ED-200,118 WeEn Semiconductors BYW29ED-200.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
на замовлення 1442 шт:
термін постачання 21-30 дні (днів)
7+65.04 грн
10+45.03 грн
42+21.41 грн
115+20.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYW29E-100,127 BYW29E-100,127 WeEn Semiconductors BYW29E-100.pdf BYW29E_Series.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
на замовлення 552 шт:
термін постачання 21-30 дні (днів)
8+54.34 грн
13+30.43 грн
25+26.91 грн
36+24.77 грн
100+23.39 грн
250+22.48 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ26AJ WeEn Semiconductors SMBJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику  од. на суму  грн.
WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors WNS20H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 1129 шт:
термін постачання 21-30 дні (днів)
6+71.63 грн
10+48.39 грн
39+23.01 грн
107+21.79 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYC30MW-650PT2Q WeEn Semiconductors BYC30MW-650PT2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 270A
товару немає в наявності
В кошику  од. на суму  грн.
BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors byc30-1200p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.3V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 65ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.14...1.4mm
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-800E,412 BTA2008-800E,412 WeEn Semiconductors PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 10mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-1000DNML WeEn Semiconductors bta2008-1000dn.pdf Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 1kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-800D,412 WeEn Semiconductors bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику  од. на суму  грн.
BYV29FD-600,118 BYV29FD-600,118 WeEn Semiconductors byv29fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Max. forward impulse current: 91A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
BYT79-500,127 BYT79-500,127 WeEn Semiconductors byt79-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
на замовлення 1103 шт:
термін постачання 21-30 дні (днів)
8+54.34 грн
10+41.44 грн
25+34.10 грн
30+30.58 грн
81+28.97 грн
250+28.29 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BT137S-600D.118 BT137S-600D.118 WeEn Semiconductors BT137S-600D.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BUJ105A,127 BUJ105A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
товару немає в наявності
В кошику  од. на суму  грн.
BTA420-800CT,127 BTA420-800CT,127 WeEn Semiconductors bta420-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420X-800CT,127 BTA420X-800CT,127 WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420-800BT,127 WeEn Semiconductors bta420-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420Y-800BT,127 WeEn Semiconductors bta420y-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 220A
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420X-800CT/L02Q WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
WNS20H100CQ WNS20H100CQ WeEn Semiconductors WNS20H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
11+38.69 грн
13+29.89 грн
42+22.25 грн
114+21.02 грн
250+20.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
TB100EP TB100EP WeEn Semiconductors tb100.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
товару немає в наявності
В кошику  од. на суму  грн.
TB100ML TB100ML WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
товару немає в наявності
В кошику  од. на суму  грн.
BUJ100LR,412 BUJ100LR,412 WeEn Semiconductors buj100lr.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
на замовлення 4614 шт:
термін постачання 21-30 дні (днів)
39+10.70 грн
44+8.72 грн
52+7.36 грн
100+6.07 грн
209+4.42 грн
575+4.18 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BUJ100,126 BUJ100,126 WeEn Semiconductors buj100.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: Ammo Pack
товару немає в наявності
В кошику  од. на суму  грн.
BUJ100,412 BUJ100,412 WeEn Semiconductors buj100.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
WNS40100CQ WNS40100CQ WeEn Semiconductors _ween_psg2020.pdf WNS40100C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)
8+57.63 грн
10+44.72 грн
25+36.08 грн
68+34.10 грн
500+33.79 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA206X-800CT,127 WeEn Semiconductors bta206x-800ct.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA206X-800CT/DG BTA206X-800CT/DG WeEn Semiconductors BTA206x-800CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC04650Q NXPSC04650Q WeEn Semiconductors NXPSC04650.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
5+89.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMDJ40AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товару немає в наявності
В кошику  од. на суму  грн.
ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors ACTT4S-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Mounting: SMD
Case: DPAK
на замовлення 2307 шт:
термін постачання 21-30 дні (днів)
8+49.69 грн
10+43.58 грн
25+32.72 грн
44+21.33 грн
119+20.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MUR320J MUR320J WeEn Semiconductors MUR320.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD24BCX ESDALD24BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Max. forward impulse current: 6A
Breakdown voltage: 26V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
товару немає в наявності
В кошику  од. на суму  грн.
BT151X-650LTNQ BT151X-650LTNQ WeEn Semiconductors BT151X-650LTN.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
BTA202W-1000CTF WeEn Semiconductors BTA202W-1000CT.pdf Category: Triacs
Description: Triac; 1kV; 2A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q; high temperature
Max. off-state voltage: 1kV
Max. load current: 2A
Gate current: 35mA
Max. forward impulse current: 25A
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Technology: 3Q
Type of thyristor: triac
Mounting: SMD
Case: SOT223
товару немає в наявності
В кошику  од. на суму  грн.
ACTT12S-800CTNJ WeEn Semiconductors ACTT12S-800CTN.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; DPAK; SMD
Mounting: SMD
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Case: DPAK
Kind of package: reel; tape
Type of thyristor: AC switch
товару немає в наявності
В кошику  од. на суму  грн.
SMDJ64CAJ WeEn Semiconductors SMDJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товару немає в наявності
В кошику  од. на суму  грн.
BYV410X-600,127 BYV410X-600,127 WeEn Semiconductors BYV410X-600.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)
5+82.33 грн
6+68.04 грн
18+52.75 грн
49+49.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA45-800BQ WeEn Semiconductors bta45-800b.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
Technology: 4Q
Max. forward impulse current: 495A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 45A
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ58AJ WeEn Semiconductors SMCJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
В кошику  од. на суму  грн.
BYV30JT-600PQ BYV30JT-600PQ WeEn Semiconductors byv30jt-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Case: SOT1293; TO3PF
Max. forward voltage: 0.96V
Max. forward impulse current: 170A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику  од. на суму  грн.
BYV415J-600PQ BYV415J-600PQ WeEn Semiconductors BYV415J-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Max. load current: 30A
товару немає в наявності
В кошику  од. на суму  грн.
BYV430J-600PQ BYV430J-600PQ WeEn Semiconductors byv430j-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.25V
Max. forward impulse current: 180A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Max. load current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
BT258-600R,127 BT258-600R,127 WeEn Semiconductors bt258-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 1081 шт:
термін постачання 21-30 дні (днів)
9+46.10 грн
14+27.98 грн
49+18.58 грн
133+17.58 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTH151S-650R,118 WeEn Semiconductors bth151s-650r.pdf Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; DPAK; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 650V
Load current: 7.5A
Case: DPAK
Max. forward impulse current: 110A
Kind of package: reel; tape
Type of thyristor: thyristor
Max. load current: 12A
Gate current: 2mA
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
BYC12MD-650PJ WeEn Semiconductors BYC12MD-650PJ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 12A; 13ns; DPAK; Ufmax: 2.3V; Ifsm: 135A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 2.3V
Max. forward impulse current: 135A
Kind of package: reel; tape
Max. load current: 24A
Reverse recovery time: 13ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1,412 EC103D1,412 WeEn Semiconductors ec103d1.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Case: TO92
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: bulk
Type of thyristor: thyristor
на замовлення 1505 шт:
термін постачання 21-30 дні (днів)
39+10.70 грн
58+6.65 грн
100+5.96 грн
176+5.20 грн
484+4.89 грн
1000+4.82 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
EC103D1WX EC103D1WX WeEn Semiconductors EC103D1W.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 128 шт:
термін постачання 21-30 дні (днів)
16+27.17 грн
21+18.42 грн
100+10.63 грн
124+7.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 626 шт:
термін постачання 21-30 дні (днів)
6+71.63 грн
7+60.39 грн
20+46.63 грн
53+43.58 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors bt138b-600f.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC04650X6Q NXPSC04650X6Q WeEn Semiconductors nxpsc04650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BYV42EB-200,118 BYV42EB-200,118 WeEn Semiconductors byv42e-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Reverse recovery time: 28ns
Max. forward impulse current: 160A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.85V
Load current: 15A x2
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors _ween_psg2020.pdf NXPSC20650W-A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650B6J WeEn Semiconductors WNSC6D20650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
товару немає в наявності
В кошику  од. на суму  грн.
NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
SOD20AX WeEn Semiconductors SOD Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
P4SOD33CAX WeEn Semiconductors P4SOD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
товару немає в наявності
В кошику  од. на суму  грн.
BYW29ED-200,118 BYW29ED-200.pdf _ween_psg2020.pdf
BYW29ED-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
на замовлення 1442 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.04 грн
10+45.03 грн
42+21.41 грн
115+20.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYW29E-100,127 BYW29E-100.pdf BYW29E_Series.pdf
BYW29E-100,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
на замовлення 552 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.34 грн
13+30.43 грн
25+26.91 грн
36+24.77 грн
100+23.39 грн
250+22.48 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ26AJ SMBJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику  од. на суму  грн.
WNS20H100CBJ WNS20H100CB.pdf
WNS20H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 1129 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+71.63 грн
10+48.39 грн
39+23.01 грн
107+21.79 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYC30MW-650PT2Q BYC30MW-650PT2.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 270A
товару немає в наявності
В кошику  од. на суму  грн.
BYC30-1200PQ byc30-1200p.pdf _ween_psg2020.pdf
BYC30-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.3V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 65ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.14...1.4mm
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-800E,412 PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf
BTA2008-800E,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 10mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-1000DNML bta2008-1000dn.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 1kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-800D,412 bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику  од. на суму  грн.
BYV29FD-600,118 byv29fd-600.pdf
BYV29FD-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Max. forward impulse current: 91A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
BYT79-500,127 byt79-500.pdf
BYT79-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
на замовлення 1103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.34 грн
10+41.44 грн
25+34.10 грн
30+30.58 грн
81+28.97 грн
250+28.29 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BT137S-600D.118 BT137S-600D.pdf _ween_psg2020.pdf
BT137S-600D.118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BUJ105A,127
BUJ105A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
товару немає в наявності
В кошику  од. на суму  грн.
BTA420-800CT,127 bta420-800ct.pdf
BTA420-800CT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420X-800CT,127 bta420x-800ct.pdf
BTA420X-800CT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420-800BT,127 bta420-800bt.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420Y-800BT,127 bta420y-800bt.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 220A
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
BTA420X-800CT/L02Q bta420x-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
товару немає в наявності
В кошику  од. на суму  грн.
WNS20H100CQ WNS20H100C.PDF
WNS20H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+38.69 грн
13+29.89 грн
42+22.25 грн
114+21.02 грн
250+20.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
TB100EP tb100.pdf
TB100EP
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
товару немає в наявності
В кошику  од. на суму  грн.
TB100ML
TB100ML
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
товару немає в наявності
В кошику  од. на суму  грн.
BUJ100LR,412 buj100lr.pdf
BUJ100LR,412
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
на замовлення 4614 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.70 грн
44+8.72 грн
52+7.36 грн
100+6.07 грн
209+4.42 грн
575+4.18 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BUJ100,126 buj100.pdf
BUJ100,126
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: Ammo Pack
товару немає в наявності
В кошику  од. на суму  грн.
BUJ100,412 buj100.pdf
BUJ100,412
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
WNS40100CQ _ween_psg2020.pdf WNS40100C.pdf
WNS40100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.63 грн
10+44.72 грн
25+36.08 грн
68+34.10 грн
500+33.79 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA206X-800CT,127 bta206x-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA206X-800CT/DG BTA206x-800CT.pdf _ween_psg2020.pdf
BTA206X-800CT/DG
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC04650Q NXPSC04650.pdf _ween_psg2020.pdf
NXPSC04650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+89.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMDJ40AJ SMDJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товару немає в наявності
В кошику  од. на суму  грн.
ACTT4S-800E,118 ACTT4S-800E.pdf
ACTT4S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Mounting: SMD
Case: DPAK
на замовлення 2307 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+49.69 грн
10+43.58 грн
25+32.72 грн
44+21.33 грн
119+20.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MUR320J MUR320.pdf
MUR320J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD24BCX ESDALDxxBC.pdf
ESDALD24BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Max. forward impulse current: 6A
Breakdown voltage: 26V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
товару немає в наявності
В кошику  од. на суму  грн.
BT151X-650LTNQ BT151X-650LTN.pdf _ween_psg2020.pdf
BT151X-650LTNQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
BTA202W-1000CTF BTA202W-1000CT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 2A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q; high temperature
Max. off-state voltage: 1kV
Max. load current: 2A
Gate current: 35mA
Max. forward impulse current: 25A
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Technology: 3Q
Type of thyristor: triac
Mounting: SMD
Case: SOT223
товару немає в наявності
В кошику  од. на суму  грн.
ACTT12S-800CTNJ ACTT12S-800CTN.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; DPAK; SMD
Mounting: SMD
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Case: DPAK
Kind of package: reel; tape
Type of thyristor: AC switch
товару немає в наявності
В кошику  од. на суму  грн.
SMDJ64CAJ SMDJ Series.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товару немає в наявності
В кошику  од. на суму  грн.
BYV410X-600,127 BYV410X-600.pdf _ween_psg2020.pdf
BYV410X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+82.33 грн
6+68.04 грн
18+52.75 грн
49+49.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA45-800BQ bta45-800b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
Technology: 4Q
Max. forward impulse current: 495A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 45A
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ58AJ SMCJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
В кошику  од. на суму  грн.
BYV30JT-600PQ byv30jt-600p.pdf
BYV30JT-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Case: SOT1293; TO3PF
Max. forward voltage: 0.96V
Max. forward impulse current: 170A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику  од. на суму  грн.
BYV415J-600PQ BYV415J-600P.pdf
BYV415J-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Max. load current: 30A
товару немає в наявності
В кошику  од. на суму  грн.
BYV430J-600PQ byv430j-600p.pdf
BYV430J-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.25V
Max. forward impulse current: 180A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Max. load current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
BT258-600R,127 bt258-600r.pdf
BT258-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 1081 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+46.10 грн
14+27.98 грн
49+18.58 грн
133+17.58 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTH151S-650R,118 bth151s-650r.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; DPAK; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 650V
Load current: 7.5A
Case: DPAK
Max. forward impulse current: 110A
Kind of package: reel; tape
Type of thyristor: thyristor
Max. load current: 12A
Gate current: 2mA
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
BYC12MD-650PJ BYC12MD-650PJ.pdf
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 12A; 13ns; DPAK; Ufmax: 2.3V; Ifsm: 135A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 2.3V
Max. forward impulse current: 135A
Kind of package: reel; tape
Max. load current: 24A
Reverse recovery time: 13ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1,412 ec103d1.pdf
EC103D1,412
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Case: TO92
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: bulk
Type of thyristor: thyristor
на замовлення 1505 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.70 грн
58+6.65 грн
100+5.96 грн
176+5.20 грн
484+4.89 грн
1000+4.82 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
EC103D1WX EC103D1W.pdf _ween_psg2020.pdf
EC103D1WX
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 128 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.17 грн
21+18.42 грн
100+10.63 грн
124+7.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 626 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+71.63 грн
7+60.39 грн
20+46.63 грн
53+43.58 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BT138B-600F,118 bt138b-600f.pdf
BT138B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC04650X6Q nxpsc04650x.pdf
NXPSC04650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BYV42EB-200,118 byv42e-200.pdf
BYV42EB-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Reverse recovery time: 28ns
Max. forward impulse current: 160A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.85V
Load current: 15A x2
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC20650W-AQ _ween_psg2020.pdf NXPSC20650W-A.pdf
NXPSC20650W-AQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650B6J WNSC6D20650B6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
товару немає в наявності
В кошику  од. на суму  грн.
NXPLQSC20650W6Q
NXPLQSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
SOD20AX SOD Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
P4SOD33CAX P4SOD.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 10 20 30 40 50 60 70 80 90 98 99 100 101 102 103 104 105  [ Наступна Сторінка >> ]