Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6261) > Сторінка 103 з 105
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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WNSC2D0512006Q | WeEn Semiconductors |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. load current: 10A Max. forward impulse current: 50A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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WNSC2D051200D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. load current: 10A Max. forward impulse current: 45A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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BT151X-650C,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT Type of thyristor: standard Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Max. forward impulse current: 100A Turn-on time: 2µs Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| P6SMAL36AX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.4A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMAL |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||
| P6SMAL75AX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMAL |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||
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BUJ303A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 500V; 5A; 100W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 5A Power dissipation: 100W Case: TO220AB Current gain: 14...35 Mounting: THT Kind of package: tube |
на замовлення 707 шт: термін постачання 14-30 дні (днів) |
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WNS40H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.1kV Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 380A Max. forward voltage: 0.68V |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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BT138X-600G,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; Igt: 50/100mA; TO220FP; tube; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 50/100mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYV25D-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 50ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.11V Max. forward impulse current: 66A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| WTMH80T16RT | WeEn Semiconductors |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 80A Max. load current: 125A Case: TO240AA Max. forward voltage: 1.29V Threshold on-voltage: 0.95V Max. forward impulse current: 1.4kA Gate current: 100mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BTA202X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 2A Case: TO220FP Gate current: 10mA Max. forward impulse current: 14A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||
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BTA225-600BT,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Gate current: 50mA Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Max. off-state voltage: 0.6kV Max. load current: 25A Kind of package: tube Case: TO220AB Type of thyristor: triac Mounting: THT Max. forward impulse current: 190A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 5.0SMDJ170AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 189÷209V; 18.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 18.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 5.0SMDJ |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||
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PHD13005,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Power dissipation: 75W Polarisation: bipolar Features of semiconductor devices: integrated anti-parallel diode Type of transistor: NPN Current gain: 10...40 Kind of package: tube Case: TO220AB Collector current: 4A Mounting: THT Collector-emitter voltage: 400V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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BT138X-600.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMBJ78AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 87.4...95.1V Max. forward impulse current: 4.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||
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TYN16-600CT,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 198A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TYN16-600RTQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR440J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 4A; 75ns; SMC; Ufmax: 1.25V; Ifsm: 140A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 140A Case: SMC Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 75ns |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||
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BYV29X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.11V Reverse recovery time: 60ns |
на замовлення 426 шт: термін постачання 14-30 дні (днів) |
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BYV29X-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.11V Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| WNSC6D40650CW-A6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 140A Kind of package: tube Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||
| WNSC6D40650CW6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 170A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||
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BTA208X-800B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 50mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 50mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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BTA208-800F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 25mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208X-800B/L02Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 50mA; TO220FP; tube; Ifsm: 71A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 50mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; Igt: 25mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208-800B/DG,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 50mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 50mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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BTA208-800B/L01,12 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 50mA; TO220AB; tube; Ifsm: 71A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 50mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208S-600D,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; Igt: 5mA; DPAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 5mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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BTA208S-800B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 50mA; D2PAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 50mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208S-800F,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 25mA; DPAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 25mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208X-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; Igt: 5mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 5mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; Igt: 25mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTA208X-800F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; Igt: 25mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NCR100Q-6MX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A Case: SOT89 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 0.51A Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 9A Gate current: 100µA |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||
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ESDAHD712BE2X | WeEn Semiconductors |
Category: Protection diodes - arrays Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional Type of diode: TVS array Breakdown voltage: 7.5...13.3V Max. forward impulse current: 19A Peak pulse power dissipation: 0.5kW Semiconductor structure: asymmetric; bidirectional Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 7...12V Leakage current: 1µA Number of channels: 2 Manufacturer series: HD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 90000 шт В кошику од. на суму грн. | ||||||||||
| WNSC2M75120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38.1A Pulsed drain current: 100A Power dissipation: 366W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 0.105Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||
| WNSC2M75120W6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30.3A Pulsed drain current: 80A Power dissipation: 231W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 0.105Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||
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WNSC2D101200D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. load current: 20A Max. forward impulse current: 80A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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ESDALD12BCX | WeEn Semiconductors |
Category: Protection diodes - arrays Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; ESD; SOD323; Ch: 1 Manufacturer series: LD Mounting: SMD Breakdown voltage: 13.3V Max. forward impulse current: 10A Peak pulse power dissipation: 0.35kW Version: ESD Max. off-state voltage: 12V Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Case: SOD323 Type of diode: TVS array Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 90000 шт В кошику од. на суму грн. | ||||||||||
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BT151U-650C,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 100A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BT151X-650LTNQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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BT151X-650R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NXPSC04650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 24A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 4A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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NXPSC06650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 36A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 6A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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NXPSC08650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 48A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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NXPSC10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 10A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
| WNSC5D10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| WNSC6D10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 75A Technology: SiC Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| WNSC5D08650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 40A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 8A Max. load current: 16A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTA45-800BQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 45A; Igt: 50mA; SOT1292,TO3P; tube; Ifsm: 495A; 4Q Case: SOT1292; TO3P Max. forward impulse current: 495A Gate current: 50mA Technology: 4Q Features of semiconductor devices: high temperature Max. off-state voltage: 0.8kV Max. load current: 45A Kind of package: tube Typ of triac: standard Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TYN40Y-800TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT Case: SOT78D Max. forward impulse current: 495A Gate current: 15mA Max. off-state voltage: 0.8kV Turn-on time: 2µs Load current: 25A Max. load current: 40A Kind of package: tube Type of thyristor: standard Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TYN40-800TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT Case: TO220AB Max. forward impulse current: 495A Gate current: 15mA Max. off-state voltage: 0.8kV Turn-on time: 2µs Load current: 25A Max. load current: 40A Kind of package: tube Type of thyristor: standard Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
BYV29-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 1.45V Reverse recovery time: 60ns |
на замовлення 900 шт: термін постачання 14-30 дні (днів) |
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BYV29FX-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.25V Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYV29B-500,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.45V Reverse recovery time: 60ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYV29B-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.45V Reverse recovery time: 60ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYV29B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 120A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.3V Reverse recovery time: 75ns Features of semiconductor devices: ultrafast switching Max. load current: 18A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYV29D-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 120A Case: DPAK Kind of package: reel; tape Max. forward voltage: 0.9V Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. |
| WNSC2D0512006Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 10A
Max. forward impulse current: 50A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 10A
Max. forward impulse current: 50A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| WNSC2D051200D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 10A
Max. forward impulse current: 45A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 10A
Max. forward impulse current: 45A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BT151X-650C,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT
Type of thyristor: standard
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT
Type of thyristor: standard
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| P6SMAL36AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| P6SMAL75AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| BUJ303A,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 5A
Power dissipation: 100W
Case: TO220AB
Current gain: 14...35
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 5A
Power dissipation: 100W
Case: TO220AB
Current gain: 14...35
Mounting: THT
Kind of package: tube
на замовлення 707 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.77 грн |
| 13+ | 33.91 грн |
| 50+ | 26.88 грн |
| 100+ | 24.65 грн |
| 500+ | 20.84 грн |
| WNS40H100CBJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 138.95 грн |
| 10+ | 76.18 грн |
| 50+ | 62.53 грн |
| BT138X-600G,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; Igt: 50/100mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50/100mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; Igt: 50/100mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50/100mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| BYV25D-600,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.11V
Max. forward impulse current: 66A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.11V
Max. forward impulse current: 66A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| WTMH80T16RT |
|
Виробник: WeEn Semiconductors
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| BTA202X-600E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| BTA225-600BT,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 190A
товару немає в наявності
В кошику
од. на суму грн.
| 5.0SMDJ170AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 189÷209V; 18.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 18.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 189÷209V; 18.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 18.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| PHD13005,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Power dissipation: 75W
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Current gain: 10...40
Kind of package: tube
Case: TO220AB
Collector current: 4A
Mounting: THT
Collector-emitter voltage: 400V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Power dissipation: 75W
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Current gain: 10...40
Kind of package: tube
Case: TO220AB
Collector current: 4A
Mounting: THT
Collector-emitter voltage: 400V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BT138X-600.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| SMBJ78AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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Мінімальне замовлення: 5 шт
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| TYN16-600CT,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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| TYN16-600RTQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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| MUR440J |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; 75ns; SMC; Ufmax: 1.25V; Ifsm: 140A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; 75ns; SMC; Ufmax: 1.25V; Ifsm: 140A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 75ns
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Мінімальне замовлення: 12000 шт
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| BYV29X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 426 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.57 грн |
| 11+ | 41.27 грн |
| 50+ | 32.34 грн |
| 100+ | 29.11 грн |
| BYV29X-500,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
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| WNSC6D40650CW-A6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 140A
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 140A
Kind of package: tube
Application: automotive industry
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Мінімальне замовлення: 600 шт
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| WNSC6D40650CW6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 170A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 170A
Kind of package: tube
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Мінімальне замовлення: 240 шт
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| BTA208X-800B,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 2000 шт
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| BTA208-800F,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 25mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 25mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208X-800B/L02Q |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220FP; tube; Ifsm: 71A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220FP; tube; Ifsm: 71A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208-600F,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 25mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 8A; Igt: 25mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208-800B/DG,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220AB; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 1000 шт
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| BTA208-800B/L01,12 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220AB; tube; Ifsm: 71A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; TO220AB; tube; Ifsm: 71A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208S-600D,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5mA; DPAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5mA; DPAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 2500 шт
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| BTA208S-800B,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; D2PAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 50mA; D2PAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208S-800F,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 25mA; DPAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 25mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 25mA; DPAK; reel,tape; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 25mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208X-600D,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208X-600F,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 25mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 8A; Igt: 25mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA208X-800F,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 25mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 25mA; TO220FP; tube; Ifsm: 65A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| NCR100Q-6MX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.51A
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.51A
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
товару немає в наявності
Мінімальне замовлення: 5 шт
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| ESDAHD712BE2X |
|
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Leakage current: 1µA
Number of channels: 2
Manufacturer series: HD
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Leakage current: 1µA
Number of channels: 2
Manufacturer series: HD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 90000 шт
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| WNSC2M75120R6Q |
|
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Мінімальне замовлення: 240 шт
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| WNSC2M75120W6Q |
|
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30.3A
Pulsed drain current: 80A
Power dissipation: 231W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30.3A
Pulsed drain current: 80A
Power dissipation: 231W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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Мінімальне замовлення: 600 шт
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| WNSC2D101200D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| ESDALD12BCX |
|
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; ESD; SOD323; Ch: 1
Manufacturer series: LD
Mounting: SMD
Breakdown voltage: 13.3V
Max. forward impulse current: 10A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; ESD; SOD323; Ch: 1
Manufacturer series: LD
Mounting: SMD
Breakdown voltage: 13.3V
Max. forward impulse current: 10A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
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Мінімальне замовлення: 90000 шт
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| BT151U-650C,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
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| BT151X-650LTNQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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Мінімальне замовлення: 1000 шт
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| BT151X-650R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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| NXPSC04650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 24A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 24A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
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Мінімальне замовлення: 1000 шт
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| NXPSC06650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 36A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 36A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
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Мінімальне замовлення: 1000 шт
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| NXPSC08650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 48A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 48A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
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Мінімальне замовлення: 1000 шт
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| NXPSC10650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
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Мінімальне замовлення: 1000 шт
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| WNSC5D10650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
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| WNSC6D10650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 75A
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 75A
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
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| WNSC5D08650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
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| BTA45-800BQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; Igt: 50mA; SOT1292,TO3P; tube; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Max. forward impulse current: 495A
Gate current: 50mA
Technology: 4Q
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 45A
Kind of package: tube
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 800V; 45A; Igt: 50mA; SOT1292,TO3P; tube; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Max. forward impulse current: 495A
Gate current: 50mA
Technology: 4Q
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 45A
Kind of package: tube
Typ of triac: standard
Mounting: THT
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| TYN40Y-800TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT
Case: SOT78D
Max. forward impulse current: 495A
Gate current: 15mA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 25A
Max. load current: 40A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT
Case: SOT78D
Max. forward impulse current: 495A
Gate current: 15mA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 25A
Max. load current: 40A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
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| TYN40-800TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT
Case: TO220AB
Max. forward impulse current: 495A
Gate current: 15mA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 25A
Max. load current: 40A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT
Case: TO220AB
Max. forward impulse current: 495A
Gate current: 15mA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 25A
Max. load current: 40A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
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| BYV29-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.77 грн |
| 13+ | 32.51 грн |
| 100+ | 29.36 грн |
| 500+ | 23.08 грн |
| BYV29FX-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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| BYV29B-500,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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| BYV29B-600,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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| BYV29B-600PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Features of semiconductor devices: ultrafast switching
Max. load current: 18A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Features of semiconductor devices: ultrafast switching
Max. load current: 18A
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| BYV29D-600PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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Мінімальне замовлення: 7500 шт
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