Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6351) > Сторінка 106 з 106

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WNSC6D10650T6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E62AA91896E0D6&compId=WNSC6D10650T6J.pdf?ci_sign=d57ade27ac012577c88c72e4f6678c8a9b98fabc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: reel; tape
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ESDALD12BCX ESDALD12BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
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WMSC020H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC016H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC040H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC010H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BT236X-600G,127 BT236X-600G,127 WeEn Semiconductors bt236x-600g.pdf Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT234-800D,127 WeEn Semiconductors bt234-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
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BT234X-600E,127 WeEn Semiconductors bt234x-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
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BT234X-800D,127 WeEn Semiconductors bt234x-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
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BT236X-600,127 BT236X-600,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-600F,127 BT236X-600F,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-800,127 BT236X-800,127 WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BT236X-800G,127 BT236X-800G,127 WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BT236X-800G/L02Q WeEn Semiconductors bt236x-800g.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Max. forward impulse current: 200A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Kind of package: tube
Mounting: THT
на замовлення 358 шт:
термін постачання 21-30 дні (днів)
9+46.10 грн
11+36.08 грн
25+31.96 грн
Мінімальне замовлення: 9
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SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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5.0SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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SMCJ40CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMDJ51CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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ACT108-600D,126 WeEn Semiconductors act108-600d.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
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BYT79X-600,127 BYT79X-600,127 WeEn Semiconductors byt79x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50ns
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 50ns
на замовлення 697 шт:
термін постачання 21-30 дні (днів)
5+102.09 грн
6+70.03 грн
10+53.97 грн
23+40.44 грн
62+38.22 грн
Мінімальне замовлення: 5
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BYT79-600,127 BYT79-600,127 WeEn Semiconductors byt79-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 60ns
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SMBJ60CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BT258S-800R,118 BT258S-800R,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)
6+80.68 грн
10+54.13 грн
53+17.35 грн
144+16.36 грн
Мінімальне замовлення: 6
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BT258S-800LT,118 BT258S-800LT,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
на замовлення 1188 шт:
термін постачання 21-30 дні (днів)
6+77.39 грн
10+49.39 грн
47+19.42 грн
128+18.35 грн
Мінімальне замовлення: 6
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BT258-500R,127 BT258-500R,127 WeEn Semiconductors bt258-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
на замовлення 993 шт:
термін постачання 21-30 дні (днів)
7+60.10 грн
10+45.79 грн
54+16.74 грн
148+15.82 грн
Мінімальне замовлення: 7
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BT258X-500R,127 BT258X-500R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
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BT258U-600R,127 BT258U-600R,127 WeEn Semiconductors bt258u-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
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BT258X-600R,127 BT258X-600R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
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BT258X-800R,127 BT258X-800R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
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BYT28-500,127 BYT28-500,127 WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Max. off-state voltage: 500V
Max. load current: 10A
Max. forward voltage: 1.4V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
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BYV34-500,127 BYV34-500,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27CDCE32E2259&compId=BYV34-500.pdf?ci_sign=15817b472341d6b648d1fd4cf558688ca98f26ed pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Max. off-state voltage: 500V
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 383 шт:
термін постачання 21-30 дні (днів)
4+110.32 грн
10+74.16 грн
21+43.58 грн
57+41.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV34-400,127 BYV34-400,127 WeEn Semiconductors byv34-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Max. off-state voltage: 0.4kV
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 1456 шт:
термін постачання 21-30 дні (днів)
4+125.96 грн
10+74.92 грн
21+45.10 грн
56+42.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV32E-150,127 BYV32E-150,127 WeEn Semiconductors byv32e-150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Max. off-state voltage: 150V
Max. load current: 20A
Max. forward voltage: 0.85V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
8+54.34 грн
9+42.81 грн
25+37.77 грн
28+32.57 грн
76+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYQ28E-200,127 BYQ28E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 0.8V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
5+82.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32E-100,127 BYV32E-100,127 WeEn Semiconductors byv32e-100.pdf BYV32E-100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Max. off-state voltage: 100V
Max. load current: 20A
Max. forward voltage: 0.85V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 618 шт:
термін постачання 21-30 дні (днів)
8+54.34 грн
9+42.81 грн
25+37.77 грн
28+32.57 грн
76+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYQ30E-200,127 BYQ30E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27721C3514259&compId=BYQ30E-200.pdf?ci_sign=5bfa4492d17aac958af24e39702e60b51820798c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 0.84V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 88A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 996 шт:
термін постачання 21-30 дні (днів)
7+65.04 грн
10+42.73 грн
25+34.63 грн
38+24.00 грн
103+22.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYV74W-400,127 BYV74W-400,127 WeEn Semiconductors byv74w-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
5+77.21 грн
16+58.87 грн
43+55.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV72EW-200,127 BYV72EW-200,127 WeEn Semiconductors byv72ew-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 1.2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
на замовлення 773 шт:
термін постачання 21-30 дні (днів)
4+134.20 грн
10+70.33 грн
16+58.10 грн
43+55.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV410X-600,127 BYV410X-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A988F0FAA7E86143&compId=BYV410X-600.pdf?ci_sign=fab362ab03afade2eb97fbde010637abc545f931 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
Features of semiconductor devices: ultrafast switching
Mounting: THT
на замовлення 1469 шт:
термін постачання 21-30 дні (днів)
5+82.33 грн
6+68.04 грн
18+52.75 грн
47+49.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYT28-300,127 BYT28-300,127 WeEn Semiconductors byt28-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Max. off-state voltage: 300V
Max. load current: 10A
Max. forward voltage: 1.4V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
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BYV34-600,127 BYV34-600,127 WeEn Semiconductors byv34-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
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BYV32G-200,127 BYV32G-200,127 WeEn Semiconductors byv32g-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.85V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: I2PAK
Features of semiconductor devices: ultrafast switching
Mounting: THT
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BYQ28X-200,127 BYQ28X-200,127 WeEn Semiconductors byq28x-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
Features of semiconductor devices: ultrafast switching
Mounting: THT
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BYV34X-600,127 BYV34X-600,127 WeEn Semiconductors byv34x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.16V
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.16V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
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BYV410-600,127 BYV410-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27FC3B26F0259&compId=BYV410-600.pdf?ci_sign=ad638461a952bc98e758be9e564d338ebbbf0464 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
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BYV34G-600,127 BYV34G-600,127 WeEn Semiconductors byv34g-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; I2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 0.92V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Case: I2PAK
Features of semiconductor devices: ultrafast switching
Mounting: THT
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BTA204-800E.127 BTA204-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT139-800E.127 BT139-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D6E43F36E259&compId=BT139-800E.pdf?ci_sign=bef01da168f172cb03f1b4b3ec4e7edbb4de50ca pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BT136-600E BT136-600E WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F1D642DBC259&compId=BT136-600E.pdf?ci_sign=6ef8137891e57a799d642ae94a5dde01e927594c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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WNSC6D10650T6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E62AA91896E0D6&compId=WNSC6D10650T6J.pdf?ci_sign=d57ade27ac012577c88c72e4f6678c8a9b98fabc
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: reel; tape
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ESDALD12BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD12BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
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WMSC020H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC016H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC040H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC010H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BT236X-600G,127 bt236x-600g.pdf
BT236X-600G,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT234-800D,127 bt234-800d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
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BT234X-600E,127 bt234x-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
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BT234X-800D,127 bt234x-800d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
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BT236X-600,127
BT236X-600,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-600F,127
BT236X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-800,127
BT236X-800,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BT236X-800G,127
BT236X-800G,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BT236X-800G/L02Q bt236x-800g.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
товару немає в наявності
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BYC15-600,127 byc15-600.pdf
BYC15-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Max. forward impulse current: 200A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Kind of package: tube
Mounting: THT
на замовлення 358 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+46.10 грн
11+36.08 грн
25+31.96 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMDJ64CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товару немає в наявності
В кошику  од. на суму  грн.
5.0SMDJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ40CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
В кошику  од. на суму  грн.
SMDJ51CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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ACT108-600D,126 act108-600d.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
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BYT79X-600,127 byt79x-600.pdf
BYT79X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50ns
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 50ns
на замовлення 697 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.09 грн
6+70.03 грн
10+53.97 грн
23+40.44 грн
62+38.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYT79-600,127 byt79-600.pdf
BYT79-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 60ns
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SMBJ60CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
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BT258S-800R,118 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800R,118
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.68 грн
10+54.13 грн
53+17.35 грн
144+16.36 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BT258S-800LT,118 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800LT,118
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
на замовлення 1188 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.39 грн
10+49.39 грн
47+19.42 грн
128+18.35 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BT258-500R,127 bt258-500r.pdf
BT258-500R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
на замовлення 993 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.10 грн
10+45.79 грн
54+16.74 грн
148+15.82 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BT258X-500R,127 bt258x-500r.pdf
BT258X-500R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
товару немає в наявності
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BT258U-600R,127 bt258u-600r.pdf
BT258U-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
товару немає в наявності
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BT258X-600R,127 bt258x-500r.pdf
BT258X-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BT258X-800R,127 bt258x-500r.pdf
BT258X-800R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BYT28-500,127
BYT28-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Max. off-state voltage: 500V
Max. load current: 10A
Max. forward voltage: 1.4V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
товару немає в наявності
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BYV34-500,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27CDCE32E2259&compId=BYV34-500.pdf?ci_sign=15817b472341d6b648d1fd4cf558688ca98f26ed pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV34-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Max. off-state voltage: 500V
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 383 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+110.32 грн
10+74.16 грн
21+43.58 грн
57+41.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV34-400,127 byv34-400.pdf
BYV34-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Max. off-state voltage: 0.4kV
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 1456 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+125.96 грн
10+74.92 грн
21+45.10 грн
56+42.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV32E-150,127 byv32e-150.pdf
BYV32E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Max. off-state voltage: 150V
Max. load current: 20A
Max. forward voltage: 0.85V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.34 грн
9+42.81 грн
25+37.77 грн
28+32.57 грн
76+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYQ28E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYQ28E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 0.8V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+82.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32E-100,127 byv32e-100.pdf BYV32E-100.pdf
BYV32E-100,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Max. off-state voltage: 100V
Max. load current: 20A
Max. forward voltage: 0.85V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 618 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.34 грн
9+42.81 грн
25+37.77 грн
28+32.57 грн
76+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYQ30E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27721C3514259&compId=BYQ30E-200.pdf?ci_sign=5bfa4492d17aac958af24e39702e60b51820798c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYQ30E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 0.84V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 88A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
на замовлення 996 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.04 грн
10+42.73 грн
25+34.63 грн
38+24.00 грн
103+22.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYV74W-400,127 byv74w-400.pdf
BYV74W-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+77.21 грн
16+58.87 грн
43+55.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV72EW-200,127 byv72ew-200.pdf
BYV72EW-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 1.2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
на замовлення 773 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+134.20 грн
10+70.33 грн
16+58.10 грн
43+55.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV410X-600,127 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A988F0FAA7E86143&compId=BYV410X-600.pdf?ci_sign=fab362ab03afade2eb97fbde010637abc545f931 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV410X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
Features of semiconductor devices: ultrafast switching
Mounting: THT
на замовлення 1469 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+82.33 грн
6+68.04 грн
18+52.75 грн
47+49.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYT28-300,127 byt28-500.pdf
BYT28-300,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Max. off-state voltage: 300V
Max. load current: 10A
Max. forward voltage: 1.4V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BYV34-600,127 byv34-600.pdf
BYV34-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BYV32G-200,127 byv32g-200.pdf
BYV32G-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.85V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Case: I2PAK
Features of semiconductor devices: ultrafast switching
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BYQ28X-200,127 byq28x-200.pdf
BYQ28X-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
Features of semiconductor devices: ultrafast switching
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BYV34X-600,127 byv34x-600.pdf
BYV34X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.16V
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.16V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BYV410-600,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E27FC3B26F0259&compId=BYV410-600.pdf?ci_sign=ad638461a952bc98e758be9e564d338ebbbf0464 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV410-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BYV34G-600,127 byv34g-600.pdf
BYV34G-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; I2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 0.92V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Case: I2PAK
Features of semiconductor devices: ultrafast switching
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BTA204-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA204-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BT139-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D6E43F36E259&compId=BT139-800E.pdf?ci_sign=bef01da168f172cb03f1b4b3ec4e7edbb4de50ca pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
BT136-600E pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F1D642DBC259&compId=BT136-600E.pdf?ci_sign=6ef8137891e57a799d642ae94a5dde01e927594c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-600E
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
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