Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6325) > Сторінка 106 з 106
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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BTA201-800ER,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||
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BTA201-800ER,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||
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BTA201-800ER,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||
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BTA201-800ER,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||
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BUJ106A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 80W Case: TO220AB Current gain: 14...33 Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||
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BYV30B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 1.35V Max. forward impulse current: 330A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| BYC75W-600PT2Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 700A Case: TO247-2 Kind of package: tube Max. forward voltage: 2.1V Max. load current: 150A Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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BYC75W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Max. forward impulse current: 750A Case: TO247AC Modified Kind of package: tube Max. forward voltage: 2.1V Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| WG50N65HFW1Q | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 150A Gate charge: 138nC Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| WG50N65DHWQ | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 123ns Turn-off time: 265ns Gate charge: 160nC Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||
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N0118GA,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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N0118GA,116 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||
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N0118GAML | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||
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WNS20H100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.7V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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WNS20S100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.8V Max. load current: 20A Max. forward impulse current: 120A Kind of package: tube |
на замовлення 72 шт: термін постачання 14-30 дні (днів) |
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BYV42E-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: SOT78; TO220AB Kind of package: tube Max. forward voltage: 1V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 28ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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BYV42EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 160A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 0.85V Max. load current: 30A Reverse recovery time: 28ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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BYR29-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube Max. off-state voltage: 0.6kV Load current: 8A Case: SOD59; TO220AC Mounting: THT Kind of package: tube Reverse recovery time: 75ns Max. forward impulse current: 66A Max. forward voltage: 1.07V Features of semiconductor devices: ultrafast switching Heatsink thickness: max. 1.3mm Semiconductor structure: single diode Type of diode: rectifying |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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| SM8S43CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 95.1A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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BTA330X-800BTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 30A Gate current: 50mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 270A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
на замовлення 456 шт: термін постачання 14-30 дні (днів) |
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BTA140-600.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 25A Gate current: 35/70mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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P1KSMBJ27AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 26.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SMDJ58CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.9...70.7V Max. forward impulse current: 32.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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EC103D1,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT Type of thyristor: standard Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Case: TO92 Mounting: THT Max. forward impulse current: 8A Kind of package: bulk Turn-on time: 2µs |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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EC103D1WX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD Type of thyristor: standard Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Case: SOT223 Mounting: SMD Max. forward impulse current: 8A Kind of package: reel; tape Turn-on time: 2µs |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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| BTA201-800ER,112 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BTA201-800ER,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BTA201-800ER,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BTA201-800ER,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| BUJ106A,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYV30B-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BYC75W-600PT2Q |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 700A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 700A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
товару немає в наявності
В кошику
од. на суму грн.
| BYC75W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 750A
Case: TO247AC Modified
Kind of package: tube
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 750A
Case: TO247AC Modified
Kind of package: tube
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
товару немає в наявності
В кошику
од. на суму грн.
| WG50N65HFW1Q |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Gate charge: 138nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Gate charge: 138nC
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| WG50N65DHWQ |
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Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 123ns
Turn-off time: 265ns
Gate charge: 160nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 123ns
Turn-off time: 265ns
Gate charge: 160nC
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| N0118GA,412 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Kind of package: bulk
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Kind of package: bulk
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| N0118GA,116 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
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Мінімальне замовлення: 10000 шт
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| N0118GAML |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| WNS20H100CQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.97 грн |
| 17+ | 25.49 грн |
| WNS20S100CQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
на замовлення 72 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.77 грн |
| 11+ | 40.16 грн |
| 25+ | 34.50 грн |
| 50+ | 30.89 грн |
| BYV42E-200,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
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| BYV42EB-200,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
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| BYR29-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube
Max. off-state voltage: 0.6kV
Load current: 8A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Reverse recovery time: 75ns
Max. forward impulse current: 66A
Max. forward voltage: 1.07V
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Semiconductor structure: single diode
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube
Max. off-state voltage: 0.6kV
Load current: 8A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Reverse recovery time: 75ns
Max. forward impulse current: 66A
Max. forward voltage: 1.07V
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.51 грн |
| 14+ | 32.87 грн |
| 41+ | 24.03 грн |
| SM8S43CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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| BTA330X-800BTQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
на замовлення 456 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.83 грн |
| 13+ | 77.23 грн |
| 36+ | 72.94 грн |
| BTA140-600.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 25A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 25A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| P1KSMBJ27AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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| SMDJ58CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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| EC103D1,412 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
Turn-on time: 2µs
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.79 грн |
| 47+ | 9.27 грн |
| 49+ | 8.58 грн |
| EC103D1WX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Max. forward impulse current: 8A
Kind of package: reel; tape
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Max. forward impulse current: 8A
Kind of package: reel; tape
Turn-on time: 2µs
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.36 грн |
| 14+ | 31.75 грн |
| 16+ | 27.12 грн |