Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6261) > Сторінка 104 з 105
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BYV29F-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYV29FB-600,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 5600 шт В кошику од. на суму грн. | ||||||||||||||
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BYV29FD-600,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 91A Case: DPAK Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BYV29G-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; I2PAK; tube; Ufmax: 1.45V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: I2PAK Kind of package: tube Max. forward voltage: 1.45V Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WNS40H100CQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.68V Max. load current: 40A Max. forward impulse current: 380A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WNS40H100CGQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.68V Max. load current: 40A Max. forward impulse current: 380A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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NCR100W-10LX | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Max. forward impulse current: 11A Gate current: 50µA Max. off-state voltage: 850V Turn-on time: 2µs Load current: 0.8A Max. load current: 1.1A Kind of package: reel; tape Case: SOT223 Type of thyristor: thyristor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMBJ64CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.6...78V Max. forward impulse current: 5.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SMCJ36CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40.3...43.9V Max. forward impulse current: 25.9A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESDALD24BCX | WeEn Semiconductors |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26V; 6A; 350W; bidirectional; ESD; SOD323; Ch: 1; LD Manufacturer series: LD Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Case: SOD323 Type of diode: TVS array Number of channels: 1 Mounting: SMD Breakdown voltage: 26V Max. forward impulse current: 6A Peak pulse power dissipation: 0.35kW Version: ESD Max. off-state voltage: 24V |
товару немає в наявності |
Мінімальне замовлення: 90000 шт В кошику од. на суму грн. | ||||||||||||||
| ESDHD05UBX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 5.9V; 16A; unidirectional; SOD523F; Ch: 1; reel,tape Mounting: SMD Manufacturer series: HD Max. forward impulse current: 16A Version: ESD Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Case: SOD523F Type of diode: TVS Number of channels: 1 Breakdown voltage: 5.9V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BYV410-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOT78,TO220AB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 132A Case: SOT78; TO220AB Kind of package: tube Max. forward voltage: 1.3V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 35ns |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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ACT108-600D,126 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT Gate current: 5mA Features of semiconductor devices: internally triggered Max. off-state voltage: 0.6kV Max. load current: 0.8A Kind of package: Ammo Pack Case: TO92 Type of thyristor: AC switch Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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ACT108-600D,412 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk Gate current: 5mA Features of semiconductor devices: internally triggered Max. off-state voltage: 0.6kV Max. load current: 0.8A Kind of package: bulk Case: TO92 Type of thyristor: AC switch Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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ACT108-600E,412 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk Gate current: 10mA Features of semiconductor devices: internally triggered Max. off-state voltage: 0.6kV Max. load current: 0.8A Kind of package: bulk Case: TO92 Type of thyristor: AC switch Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT137-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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ACTT4S-800E,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 10mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
на замовлення 1475 шт: термін постачання 14-30 дні (днів) |
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5.0SMDJ64CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 48.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 5.0SMDJ |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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TOPT12-800C0,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 95A Technology: Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube Protection: anti-overload OPP; overheating OTP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYT79X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; Ifsm: 165A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 60ns Semiconductor structure: single diode Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Max. forward impulse current: 165A Kind of package: tube |
на замовлення 980 шт: термін постачання 14-30 дні (днів) |
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BT138B-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; Igt: 25/70mA; D2PAK; reel,tape; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 25/70mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT138B-600G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; Igt: 50/100mA; D2PAK; reel,tape; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 50/100mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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BYV42E-150,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: SOT78; TO220AB Kind of package: tube Max. forward voltage: 0.78V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 28ns |
на замовлення 642 шт: термін постачання 14-30 дні (днів) |
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BT132-600D,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; Igt: 5/10mA; TO92; bulk; Ifsm: 16A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5/10mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 16A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BT132-600D,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; Igt: 5/10mA; TO92; reel,tape; Ifsm: 16A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5/10mA Case: TO92 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 16A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BYW29E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 88A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 0.8V Reverse recovery time: 25ns Heatsink thickness: 1.15...1.4mm |
на замовлення 1388 шт: термін постачання 14-30 дні (днів) |
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BYW29EX-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD113,TO220FP-2; tube Mounting: THT Max. forward impulse current: 88A Max. forward voltage: 0.8V Features of semiconductor devices: ultrafast switching Max. off-state voltage: 200V Load current: 8A Kind of package: tube Semiconductor structure: single diode Case: SOD113; TO220FP-2 Type of diode: rectifying Reverse recovery time: 25ns |
на замовлення 2218 шт: термін постачання 14-30 дні (днів) |
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BYW29E-150,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 8A; Ifsm: 88A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 88A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 0.8V Reverse recovery time: 25ns Heatsink thickness: 1.15...1.4mm |
на замовлення 393 шт: термін постачання 14-30 дні (днів) |
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BYW29E-100,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 8A; Ifsm: 88A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 88A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 0.895V Reverse recovery time: 25ns |
на замовлення 477 шт: термін постачання 14-30 дні (днів) |
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BT138X-800 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; Igt: 35/70mA; TO220FP; tube; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35/70mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT138X-800F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; Igt: 25/70mA; TO220FP; tube; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 25/70mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ATS40120HET | WeEn Semiconductors |
Category: Thyristor modules Description: ATS40120HET |
на замовлення 3024 шт: термін постачання 14-30 дні (днів) |
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SMDJ48CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 48V Breakdown voltage: 53.7...58.5V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMS20N700SKX | WeEn Semiconductors |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Pulsed drain current: 14A Power dissipation: 1.4W Case: SOT23-3 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT138-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; Igt: 35/70mA; TO220AB; tube; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35/70mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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MUR860J | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 180A Case: SMC Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 90ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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P1KSMBJ68CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 10.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT137S-600D.118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 5/10mA Case: DPAK Mounting: SMD Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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BYV410X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 35ns |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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BYV410X-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 137A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 20ns |
на замовлення 725 шт: термін постачання 14-30 дні (днів) |
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BYV410X-600/L01Q | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 132A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 35ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BT151U-500C,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us Type of thyristor: standard Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: IPAK Mounting: THT Max. forward impulse current: 100A Turn-on time: 2µs Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYC100W-1200PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns Features of semiconductor devices: superfast switching Max. off-state voltage: 1.2kV Load current: 100A Kind of package: tube Semiconductor structure: single diode Case: TO247-2 Type of diode: rectifying Reverse recovery time: 115ns Mounting: THT Max. forward impulse current: 0.9kA Max. forward voltage: 2.2V |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||
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BT138X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; Igt: 10/25mA; TO220FP; tube; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 10/25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ40CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.7...48.8V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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ACTT2S-800E,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD Mounting: SMD Gate current: 10mA Max. off-state voltage: 0.8kV Max. load current: 2A Kind of package: reel; tape Case: DPAK Type of thyristor: AC switch |
на замовлення 2498 шт: термін постачання 14-30 дні (днів) |
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BT151X-800C,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor: standard; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT Type of thyristor: standard Max. off-state voltage: 0.8kV Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Max. forward impulse current: 100A Turn-on time: 2µs Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYV415W-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; TO247-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: TO247-3 Kind of package: tube Max. forward voltage: 1.1V Max. load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYV415J-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; SOT1293,TO3PF; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: SOT1293; TO3PF Kind of package: tube Max. forward voltage: 1.1V Max. load current: 30A |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | ||||||||||||||
| SM8S33CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 124A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ACTT4S-800C,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 35mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYT79-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 14A; Ifsm: 130A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 14A Reverse recovery time: 60ns Semiconductor structure: single diode Case: SOD59; TO220AC Max. forward voltage: 0.9V Max. forward impulse current: 130A Kind of package: tube Features of semiconductor devices: ultrafast switching |
на замовлення 835 шт: термін постачання 14-30 дні (днів) |
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BYT79X-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD113; TO220FP-2 Max. forward voltage: 1.2V Max. forward impulse current: 143A Kind of package: tube |
на замовлення 561 шт: термін постачання 14-30 дні (днів) |
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BYT79-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 60ns Semiconductor structure: single diode Case: SOD59; TO220AC Max. forward voltage: 1.2V Max. forward impulse current: 143A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYT79B-600PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 15A; 60ns; D2PAK,SOT404; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 60ns Semiconductor structure: single diode Case: D2PAK; SOT404 Max. forward voltage: 1.25V Max. forward impulse current: 165A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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BTA201-800B,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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BTA201-600B,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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BTA201-600E,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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BTA201-600E,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BTA201-600E/L01EP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| BYV29F-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
товару немає в наявності
В кошику
од. на суму грн.
| BYV29FB-600,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 5600 шт
В кошику
од. на суму грн.
| BYV29FD-600,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 91A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 91A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BYV29G-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; I2PAK; tube; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: I2PAK
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; I2PAK; tube; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: I2PAK
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
товару немає в наявності
В кошику
од. на суму грн.
| WNS40H100CQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| WNS40H100CGQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NCR100W-10LX |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. forward impulse current: 11A
Gate current: 50µA
Max. off-state voltage: 850V
Turn-on time: 2µs
Load current: 0.8A
Max. load current: 1.1A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. forward impulse current: 11A
Gate current: 50µA
Max. off-state voltage: 850V
Turn-on time: 2µs
Load current: 0.8A
Max. load current: 1.1A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ64CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ36CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
В кошику
од. на суму грн.
| ESDALD24BCX |
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Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; ESD; SOD323; Ch: 1; LD
Manufacturer series: LD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 24V
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; ESD; SOD323; Ch: 1; LD
Manufacturer series: LD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 24V
товару немає в наявності
Мінімальне замовлення: 90000 шт
В кошику
од. на суму грн.
| ESDHD05UBX |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.9V; 16A; unidirectional; SOD523F; Ch: 1; reel,tape
Mounting: SMD
Manufacturer series: HD
Max. forward impulse current: 16A
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD523F
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 5.9V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.9V; 16A; unidirectional; SOD523F; Ch: 1; reel,tape
Mounting: SMD
Manufacturer series: HD
Max. forward impulse current: 16A
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD523F
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 5.9V
товару немає в наявності
В кошику
од. на суму грн.
| BYV410-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 35ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ACT108-600D,126 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Gate current: 5mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: Ammo Pack
Case: TO92
Type of thyristor: AC switch
Mounting: THT
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Gate current: 5mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: Ammo Pack
Case: TO92
Type of thyristor: AC switch
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ACT108-600D,412 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Gate current: 5mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: AC switch
Mounting: THT
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Gate current: 5mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: AC switch
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ACT108-600E,412 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Gate current: 10mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: AC switch
Mounting: THT
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Gate current: 10mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: AC switch
Mounting: THT
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| BT137-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 3 шт
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| ACTT4S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 1475 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.41 грн |
| 15+ | 29.44 грн |
| 100+ | 20.76 грн |
| 250+ | 19.19 грн |
| 5.0SMDJ64CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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Мінімальне замовлення: 6000 шт
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| TOPT12-800C0,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 95A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 95A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
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| BYT79X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 165A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. forward impulse current: 165A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 165A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. forward impulse current: 165A
Kind of package: tube
на замовлення 980 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 73.04 грн |
| 10+ | 49.46 грн |
| 50+ | 42.10 грн |
| 100+ | 39.87 грн |
| 500+ | 35.15 грн |
| BT138B-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; Igt: 25/70mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 25/70mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; Igt: 25/70mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 25/70mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| BT138B-600G,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; Igt: 50/100mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50/100mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; Igt: 50/100mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50/100mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 800 шт
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| BYV42E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
на замовлення 642 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.53 грн |
| 10+ | 67.99 грн |
| 25+ | 61.37 грн |
| 50+ | 56.66 грн |
| 100+ | 52.19 грн |
| 250+ | 46.57 грн |
| 500+ | 44.50 грн |
| BT132-600D,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 5/10mA; TO92; bulk; Ifsm: 16A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 5/10mA; TO92; bulk; Ifsm: 16A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 10000 шт
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| BT132-600D,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 5/10mA; TO92; reel,tape; Ifsm: 16A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 5/10mA; TO92; reel,tape; Ifsm: 16A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 10000 шт
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| BYW29E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
на замовлення 1388 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.87 грн |
| 10+ | 56.74 грн |
| 50+ | 46.32 грн |
| 100+ | 42.10 грн |
| 250+ | 37.47 грн |
| 500+ | 34.57 грн |
| 1000+ | 32.01 грн |
| BYW29EX-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD113,TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 88A
Max. forward voltage: 0.8V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Type of diode: rectifying
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD113,TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 88A
Max. forward voltage: 0.8V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Type of diode: rectifying
Reverse recovery time: 25ns
на замовлення 2218 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 123.81 грн |
| 10+ | 63.60 грн |
| 45+ | 21.34 грн |
| 50+ | 21.26 грн |
| 123+ | 20.10 грн |
| BYW29E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
на замовлення 393 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.15 грн |
| 9+ | 46.48 грн |
| 11+ | 39.62 грн |
| 25+ | 33.00 грн |
| 50+ | 29.44 грн |
| 100+ | 26.96 грн |
| BYW29E-100,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
на замовлення 477 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.55 грн |
| 15+ | 29.44 грн |
| 25+ | 25.97 грн |
| 100+ | 24.07 грн |
| BT138X-800 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; Igt: 35/70mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35/70mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 12A; Igt: 35/70mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35/70mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| BT138X-800F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; Igt: 25/70mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 25/70mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 12A; Igt: 25/70mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 25/70mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| ATS40120HET |
на замовлення 3024 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 96+ | 372.33 грн |
| SMDJ48CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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| WMS20N700SKX |
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Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BT138-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; Igt: 35/70mA; TO220AB; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 12A; Igt: 35/70mA; TO220AB; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 3 шт
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| MUR860J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| P1KSMBJ68CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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| BT137S-600D.118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Case: DPAK
Mounting: SMD
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Case: DPAK
Mounting: SMD
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 5 шт
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| BYV410X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.57 грн |
| 9+ | 50.62 грн |
| 25+ | 44.33 грн |
| 100+ | 40.86 грн |
| BYV410X-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
на замовлення 725 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.28 грн |
| 7+ | 66.17 грн |
| 25+ | 59.55 грн |
| 100+ | 52.93 грн |
| 500+ | 52.11 грн |
| BYV410X-600/L01Q |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
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Мінімальне замовлення: 3000 шт
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| BT151U-500C,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us
Type of thyristor: standard
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us
Type of thyristor: standard
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
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| BYC100W-1200PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns
Features of semiconductor devices: superfast switching
Max. off-state voltage: 1.2kV
Load current: 100A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 115ns
Mounting: THT
Max. forward impulse current: 0.9kA
Max. forward voltage: 2.2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns
Features of semiconductor devices: superfast switching
Max. off-state voltage: 1.2kV
Load current: 100A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 115ns
Mounting: THT
Max. forward impulse current: 0.9kA
Max. forward voltage: 2.2V
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Мінімальне замовлення: 900 шт
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| BT138X-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; Igt: 10/25mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 10/25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; Igt: 10/25mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 10/25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| SMBJ40CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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Мінімальне замовлення: 5 шт
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| ACTT2S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 2A
Kind of package: reel; tape
Case: DPAK
Type of thyristor: AC switch
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 2A
Kind of package: reel; tape
Case: DPAK
Type of thyristor: AC switch
на замовлення 2498 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.21 грн |
| 14+ | 30.93 грн |
| 25+ | 27.46 грн |
| 49+ | 19.35 грн |
| 135+ | 18.28 грн |
| BT151X-800C,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
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| BYV415W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; TO247-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; TO247-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
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| BYV415J-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; SOT1293,TO3PF; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; SOT1293,TO3PF; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
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Мінімальне замовлення: 2400 шт
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| SM8S33CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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| ACTT4S-800C,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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| BYT79-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; Ifsm: 130A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; Ifsm: 130A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
на замовлення 835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.76 грн |
| BYT79X-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
на замовлення 561 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.98 грн |
| 6+ | 74.27 грн |
| 10+ | 67.82 грн |
| 50+ | 56.24 грн |
| 100+ | 52.03 грн |
| 500+ | 42.35 грн |
| BYT79-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
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| BYT79B-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 60ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. forward impulse current: 165A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 60ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. forward impulse current: 165A
Kind of package: reel; tape
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Мінімальне замовлення: 800 шт
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| BTA201-800B,112 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 3 шт
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| BTA201-600B,112 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 3 шт
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| BTA201-600E,112 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 3 шт
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| BTA201-600E,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BTA201-600E/L01EP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.

























