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BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors bt138b-600f.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BYV42EB-200,118 BYV42EB-200,118 WeEn Semiconductors byv42e-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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WNSC6D20650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
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SOD20AX WeEn Semiconductors SOD Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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P4SOD33CAX WeEn Semiconductors P4SOD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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P4SOD36AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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P4SOD58AX P4SOD58AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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WMSC008H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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BT137X-600.127 BT137X-600.127 WeEn Semiconductors BT137X-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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ESDALD36BCX ESDALD36BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Case: SOD323
Max. forward impulse current: 3A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 38V
Number of channels: 1
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
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BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
5+96.33 грн
10+70.79 грн
23+39.83 грн
62+37.69 грн
Мінімальне замовлення: 5
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BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138-800E.127 BT138-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913802018FA259&compId=BT138-800E.pdf?ci_sign=b984e895b60ea3f4cf57d9df4f6794e71b7c29f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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WNS40H100CQ WNS40H100CQ WeEn Semiconductors WNS40H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 854 шт:
термін постачання 21-30 дні (днів)
6+74.92 грн
10+56.80 грн
20+45.18 грн
55+42.73 грн
500+42.66 грн
Мінімальне замовлення: 6
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WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
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WNS20S100CQ WNS20S100CQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88EE26310E40C7&compId=WNS20S100C.PDF?ci_sign=da2c5dd666f0d911007a34bfcc7be943de9eb15c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Max. off-state voltage: 100V
Load current: 10A x2
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. load current: 20A
Max. forward voltage: 0.8V
Semiconductor structure: common cathode; double
на замовлення 213 шт:
термін постачання 21-30 дні (днів)
9+50.22 грн
13+31.04 грн
42+21.64 грн
115+20.49 грн
Мінімальне замовлення: 9
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WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF60287D9DB60C7&compId=WNS20S100CB.pdf?ci_sign=d8fdda0e275521bc549ae6917ce2513a7fa75ed2 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. off-state voltage: 100V
Load current: 10A x2
Max. forward impulse current: 120A
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. load current: 20A
Max. forward voltage: 0.8V
Semiconductor structure: common cathode; double
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
7+60.92 грн
10+46.18 грн
Мінімальне замовлення: 7
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BT139-800.127 BT139-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D2FDA6B36259&compId=BT139-800.pdf?ci_sign=24bbac5cefa6e21f9d6aa10618d78f3034248c8a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BYV42G-200,127 BYV42G-200,127 WeEn Semiconductors byv42g-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: I2PAK
Features of semiconductor devices: ultrafast switching
Mounting: THT
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NCR100Q-6MX WeEn Semiconductors NCR100Q-6M_0.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Max. forward impulse current: 9A
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NCR100W-12LX WeEn Semiconductors ncr100w-12l.pdf Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10LX WeEn Semiconductors ncr100w-10l.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10MX WeEn Semiconductors ncr100w-10m.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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BTA140-600.127 BTA140-600.127 WeEn Semiconductors BTA140-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. forward impulse current: 190A
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BUJ103A,127 BUJ103A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
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BUJ103AX,127 BUJ103AX,127 WeEn Semiconductors PHGLS23441-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
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BUJ103AD,118 WeEn Semiconductors BUJ103AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
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BTA201-600B,112 BTA201-600B,112 WeEn Semiconductors bta201-600b.pdf BTA201-600B%2C112.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,112 BTA201-600E,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,126 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA330-800BTQ BTA330-800BTQ WeEn Semiconductors bta330-800bt.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
5+80.27 грн
10+71.10 грн
15+61.92 грн
40+58.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA330X-800BTQ BTA330X-800BTQ WeEn Semiconductors BTA330X-800BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
4+105.38 грн
5+90.21 грн
14+68.04 грн
37+64.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA330Y-800BTQ BTA330Y-800BTQ WeEn Semiconductors BTA330Y-800BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
2+223.11 грн
5+191.89 грн
6+159.01 грн
16+149.84 грн
100+144.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
WNS40H100CGQ WNS40H100CGQ WeEn Semiconductors _ween_psg2020.pdf WNS40H100CG.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
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WSJM65R170XQ WeEn Semiconductors WSJM65R170XQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HD
Version: ESD
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BYQ28ED-200,118 BYQ28ED-200,118 WeEn Semiconductors byq28ed-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
9+49.40 грн
10+39.45 грн
40+22.32 грн
110+21.10 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC5B-600,118 BYC5B-600,118 WeEn Semiconductors byc5b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
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BYV25D-600,118 BYV25D-600,118 WeEn Semiconductors byv25d-600.pdf BYV25D-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Reverse recovery time: 50ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.11V
Load current: 5A
Semiconductor structure: single diode
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BYV29B-500,118 BYV29B-500,118 WeEn Semiconductors byv29b-500.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV29B-600,118 BYV29B-600,118 WeEn Semiconductors byv29b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV25FB-600,118 BYV25FB-600,118 WeEn Semiconductors byv25fb-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV25FD-600,118 BYV25FD-600,118 WeEn Semiconductors byv25fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV29FB-600,118 BYV29FB-600,118 WeEn Semiconductors BYV29FB-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
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MUR440J MUR440J WeEn Semiconductors MUR440.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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WNSC6D30650W6Q WeEn Semiconductors WNSC6D30650W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
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BT138B-600F,118 bt138b-600f.pdf
BT138B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BYV42EB-200,118 byv42e-200.pdf
BYV42EB-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
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NXPSC20650W-AQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616
NXPSC20650W-AQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
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NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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WNSC6D20650B6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
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NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
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SOD20AX SOD Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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P4SOD33CAX P4SOD.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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P4SOD36AX P4SOD.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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P4SOD58AX P4SOD.pdf
P4SOD58AX
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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WMSC008H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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ACTT2S-800ETNJ actt2s-800etn.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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BT137X-600.127 BT137X-600.pdf _ween_psg2020.pdf
BT137X-600.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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ESDALD36BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD36BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Case: SOD323
Max. forward impulse current: 3A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 38V
Number of channels: 1
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
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BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+96.33 грн
10+70.79 грн
23+39.83 грн
62+37.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf
BTA216X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913802018FA259&compId=BT138-800E.pdf?ci_sign=b984e895b60ea3f4cf57d9df4f6794e71b7c29f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT138-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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WNS40H100CQ WNS40H100C.PDF
WNS40H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 854 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.92 грн
10+56.80 грн
20+45.18 грн
55+42.73 грн
500+42.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
WNSC04650T6J WNSC04650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
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WNS20S100CQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88EE26310E40C7&compId=WNS20S100C.PDF?ci_sign=da2c5dd666f0d911007a34bfcc7be943de9eb15c
WNS20S100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Max. off-state voltage: 100V
Load current: 10A x2
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. load current: 20A
Max. forward voltage: 0.8V
Semiconductor structure: common cathode; double
на замовлення 213 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.22 грн
13+31.04 грн
42+21.64 грн
115+20.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
WNS20S100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF60287D9DB60C7&compId=WNS20S100CB.pdf?ci_sign=d8fdda0e275521bc549ae6917ce2513a7fa75ed2
WNS20S100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. off-state voltage: 100V
Load current: 10A x2
Max. forward impulse current: 120A
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. load current: 20A
Max. forward voltage: 0.8V
Semiconductor structure: common cathode; double
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.92 грн
10+46.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BT139-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D2FDA6B36259&compId=BT139-800.pdf?ci_sign=24bbac5cefa6e21f9d6aa10618d78f3034248c8a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BYV42G-200,127 byv42g-200.pdf
BYV42G-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: I2PAK
Features of semiconductor devices: ultrafast switching
Mounting: THT
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NCR100Q-6MX NCR100Q-6M_0.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Max. forward impulse current: 9A
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NCR100W-12LX ncr100w-12l.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10LX ncr100w-10l.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10MX ncr100w-10m.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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BTA140-600.127 BTA140-600.pdf _ween_psg2020.pdf
BTA140-600.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. forward impulse current: 190A
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BUJ103A,127
BUJ103A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
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BUJ103AX,127 PHGLS23441-1.pdf?t.download=true&u=5oefqw
BUJ103AX,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
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BUJ103AD,118 BUJ103AD.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
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BTA201-600B,112 bta201-600b.pdf BTA201-600B%2C112.pdf
BTA201-600B,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,112 bta201-600b.pdf
BTA201-600E,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,126 bta201-600b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E/L01EP bta201-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
товару немає в наявності
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BTA330-800BTQ bta330-800bt.pdf
BTA330-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+80.27 грн
10+71.10 грн
15+61.92 грн
40+58.87 грн
Мінімальне замовлення: 5
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BTA330X-800BTQ BTA330X-800BT.pdf _ween_psg2020.pdf
BTA330X-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+105.38 грн
5+90.21 грн
14+68.04 грн
37+64.22 грн
Мінімальне замовлення: 4
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BTA330Y-800BTQ BTA330Y-800BT.pdf _ween_psg2020.pdf
BTA330Y-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+223.11 грн
5+191.89 грн
6+159.01 грн
16+149.84 грн
100+144.49 грн
Мінімальне замовлення: 2
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WNS40H100CGQ _ween_psg2020.pdf WNS40H100CG.pdf
WNS40H100CGQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
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WSJM65R170XQ WSJM65R170XQ.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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ESDHD03UFX ESDHDxxUF%20Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HD
Version: ESD
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BYQ28ED-200,118 byq28ed-200.pdf
BYQ28ED-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.40 грн
10+39.45 грн
40+22.32 грн
110+21.10 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC5B-600,118 byc5b-600.pdf
BYC5B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
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BYV25D-600,118 byv25d-600.pdf BYV25D-600.pdf
BYV25D-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Reverse recovery time: 50ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.11V
Load current: 5A
Semiconductor structure: single diode
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BYV29B-500,118 byv29b-500.pdf
BYV29B-500,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV29B-600,118 byv29b-600.pdf
BYV29B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
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BYV25FB-600,118 byv25fb-600.pdf
BYV25FB-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV25FD-600,118 byv25fd-600.pdf
BYV25FD-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
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BYV29FB-600,118 BYV29FB-600.pdf _ween_psg2020.pdf
BYV29FB-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
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MUR440J MUR440.pdf
MUR440J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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WNSC6D30650W6Q WNSC6D30650W6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
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