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P4SOD36AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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P4SOD58AX P4SOD58AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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TYN16-600CT,127 WeEn Semiconductors tyn16-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ WeEn Semiconductors tyn16-600rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16X-600CT,127 TYN16X-600CT,127 WeEn Semiconductors TYN16X-600CT.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
8+54.34 грн
14+29.05 грн
25+25.38 грн
40+23.01 грн
109+21.79 грн
Мінімальне замовлення: 8
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WMSC008H12B1P6T WeEn Semiconductors WMSC008H12B1P6T.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
On-state resistance: 8mΩ
Power dissipation: 244W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 300A
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ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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BYV29X-600,127 BYV29X-600,127 WeEn Semiconductors byv29x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 566 шт:
термін постачання 21-30 дні (днів)
8+53.51 грн
10+40.67 грн
40+23.16 грн
109+21.86 грн
Мінімальне замовлення: 8
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BT137X-600.127 BT137X-600.127 WeEn Semiconductors BT137X-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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TOPT16-800C0,127 TOPT16-800C0,127 WeEn Semiconductors topt16-800c0.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 140A
Protection: anti-overload OPP; overheating OTP
Features of semiconductor devices: high temperature
Technology: Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
4+110.32 грн
5+92.50 грн
13+74.16 грн
35+69.57 грн
250+68.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ESDALD36BCX ESDALD36BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
Case: SOD323
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BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
5+96.33 грн
10+70.79 грн
23+39.75 грн
62+37.61 грн
Мінімальне замовлення: 5
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BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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SMDJ51CAJ WeEn Semiconductors SMDJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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WNSC6D40650CW-A6Q WeEn Semiconductors WNSC6D40650CW-A6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 140A
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
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WNSC6D40650CW6Q WeEn Semiconductors WNSC6D40650CW6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 170A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
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BT138-800E.127 BT138-800E.127 WeEn Semiconductors BT138-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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WNS40H100CQ WNS40H100CQ WeEn Semiconductors WNS40H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 854 шт:
термін постачання 21-30 дні (днів)
6+74.92 грн
10+56.80 грн
20+45.18 грн
55+42.73 грн
500+42.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYQ30E-200,127 BYQ30E-200,127 WeEn Semiconductors BYQ30E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOT78; TO220AB
Max. forward voltage: 0.84V
Max. load current: 16A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 996 шт:
термін постачання 21-30 дні (днів)
7+60.10 грн
12+33.33 грн
25+26.15 грн
38+24.08 грн
100+24.00 грн
105+22.78 грн
500+22.55 грн
Мінімальне замовлення: 7
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NXPSC046506Q NXPSC046506Q WeEn Semiconductors nxpsc04650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
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WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 24A
Kind of package: reel; tape
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WNSC5D04650D6J WeEn Semiconductors WNSC5D04650D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 26A
Kind of package: reel; tape
Max. load current: 8A
Max. forward voltage: 2.2V
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WNSC5D046506Q WeEn Semiconductors WNSC5D046506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 28A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 2.2V
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WNSC6D046506Q WeEn Semiconductors WNSC6D046506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 36A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 1.55V
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WNSC6D04650Q WNSC6D04650Q WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
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BYW29E-200.127 BYW29E-200.127 WeEn Semiconductors BYW29E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
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MAC223A6,127 MAC223A6,127 WeEn Semiconductors mac223a6.pdf Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
на замовлення 817 шт:
термін постачання 21-30 дні (днів)
5+86.45 грн
7+57.49 грн
22+41.74 грн
61+39.45 грн
Мінімальне замовлення: 5
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MAC223A8X,127 MAC223A8X,127 WeEn Semiconductors mac223a8x.pdf Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
на замовлення 371 шт:
термін постачання 21-30 дні (днів)
5+98.80 грн
10+79.12 грн
21+44.19 грн
57+41.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WNS20S100CQ WNS20S100CQ WeEn Semiconductors WNS20S100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
на замовлення 213 шт:
термін постачання 21-30 дні (днів)
9+50.22 грн
13+31.04 грн
42+21.86 грн
115+20.72 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors WNS20S100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
7+60.92 грн
10+46.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
WNS20S100CXQ WNS20S100CXQ WeEn Semiconductors _ween_psg2020.pdf WNS20S100CX.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
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SMDJ33AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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SMDJ33CAJ WeEn Semiconductors SMDJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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BYV34-400,127 BYV34-400,127 WeEn Semiconductors byv34-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
на замовлення 1479 шт:
термін постачання 21-30 дні (днів)
4+110.32 грн
10+77.98 грн
21+45.10 грн
57+42.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV29-400,127 BYV29-400,127 WeEn Semiconductors _ween_psg2020.pdf BYV29-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.9V
Load current: 9A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.15...1.4mm
Case: SOD59; TO220AC
на замовлення 464 шт:
термін постачання 21-30 дні (днів)
7+59.28 грн
10+45.33 грн
33+27.75 грн
91+26.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYV74W-400,127 BYV74W-400,127 WeEn Semiconductors byv74w-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
на замовлення 294 шт:
термін постачання 21-30 дні (днів)
5+77.21 грн
16+58.87 грн
43+55.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV30B-600PJ BYV30B-600PJ WeEn Semiconductors byv30b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
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WNSCM80120R6Q WeEn Semiconductors WNSCM80120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M30120R6Q WeEn Semiconductors WNSC2M30120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M60120R6Q WeEn Semiconductors WNSC2M60120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43.2A; Idm: 120A; 417W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43.2A
Pulsed drain current: 120A
Power dissipation: 417W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M75120R6Q WeEn Semiconductors WNSC2M75120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BT139-800.127 BT139-800.127 WeEn Semiconductors BT139-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BYV42G-200,127 BYV42G-200,127 WeEn Semiconductors byv42g-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: I2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
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NCR100Q-6MX WeEn Semiconductors NCR100Q-6M_0.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
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NCR100W-12LX WeEn Semiconductors ncr100w-12l.pdf Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10LX WeEn Semiconductors ncr100w-10l.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10MX WeEn Semiconductors ncr100w-10m.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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BTA140-600.127 BTA140-600.127 WeEn Semiconductors BTA140-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. forward impulse current: 190A
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BUJ103A,127 BUJ103A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
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BUJ103AX,127 BUJ103AX,127 WeEn Semiconductors PHGLS23441-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
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BUJ103AD,118 WeEn Semiconductors BUJ103AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
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BTA201-600B,112 BTA201-600B,112 WeEn Semiconductors BTA201-600B%2C112.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 50mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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P4SOD36AX P4SOD.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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P4SOD58AX P4SOD.pdf
P4SOD58AX
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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TYN16-600CT,127 tyn16-600ct.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ tyn16-600rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16X-600CT,127 TYN16X-600CT.pdf _ween_psg2020.pdf
TYN16X-600CT,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.34 грн
14+29.05 грн
25+25.38 грн
40+23.01 грн
109+21.79 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
WMSC008H12B1P6T WMSC008H12B1P6T.pdf
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
On-state resistance: 8mΩ
Power dissipation: 244W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 300A
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ACTT2S-800ETNJ actt2s-800etn.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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BYV29X-600,127 byv29x-600.pdf
BYV29X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 566 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+53.51 грн
10+40.67 грн
40+23.16 грн
109+21.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BT137X-600.127 BT137X-600.pdf _ween_psg2020.pdf
BT137X-600.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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TOPT16-800C0,127 topt16-800c0.pdf
TOPT16-800C0,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 140A
Protection: anti-overload OPP; overheating OTP
Features of semiconductor devices: high temperature
Technology: Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+110.32 грн
5+92.50 грн
13+74.16 грн
35+69.57 грн
250+68.04 грн
Мінімальне замовлення: 4
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ESDALD36BCX ESDALDxxBC.pdf
ESDALD36BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
Case: SOD323
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BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+96.33 грн
10+70.79 грн
23+39.75 грн
62+37.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf
BTA216X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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SMDJ51CAJ SMDJ Series.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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WNSC6D40650CW-A6Q WNSC6D40650CW-A6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 140A
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
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WNSC6D40650CW6Q WNSC6D40650CW6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 170A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
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BT138-800E.127 BT138-800E.pdf _ween_psg2020.pdf
BT138-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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WNS40H100CQ WNS40H100C.PDF
WNS40H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 854 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.92 грн
10+56.80 грн
20+45.18 грн
55+42.73 грн
500+42.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYQ30E-200,127 BYQ30E-200.pdf _ween_psg2020.pdf
BYQ30E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOT78; TO220AB
Max. forward voltage: 0.84V
Max. load current: 16A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 996 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.10 грн
12+33.33 грн
25+26.15 грн
38+24.08 грн
100+24.00 грн
105+22.78 грн
500+22.55 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NXPSC046506Q nxpsc04650.pdf
NXPSC046506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
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WNSC04650T6J WNSC04650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 24A
Kind of package: reel; tape
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WNSC5D04650D6J WNSC5D04650D6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 26A
Kind of package: reel; tape
Max. load current: 8A
Max. forward voltage: 2.2V
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WNSC5D046506Q WNSC5D046506Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 28A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 2.2V
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WNSC6D046506Q WNSC6D046506Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 36A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 1.55V
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WNSC6D04650Q
WNSC6D04650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
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BYW29E-200.127 BYW29E-200.pdf _ween_psg2020.pdf
BYW29E-200.127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
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MAC223A6,127 mac223a6.pdf
MAC223A6,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
на замовлення 817 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+86.45 грн
7+57.49 грн
22+41.74 грн
61+39.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MAC223A8X,127 mac223a8x.pdf
MAC223A8X,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
на замовлення 371 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+98.80 грн
10+79.12 грн
21+44.19 грн
57+41.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WNS20S100CQ WNS20S100C.PDF
WNS20S100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
на замовлення 213 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.22 грн
13+31.04 грн
42+21.86 грн
115+20.72 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
WNS20S100CBJ WNS20S100CB.pdf
WNS20S100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.92 грн
10+46.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
WNS20S100CXQ _ween_psg2020.pdf WNS20S100CX.pdf
WNS20S100CXQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
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SMDJ33AJ SMDJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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SMDJ33CAJ SMDJ Series.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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BYV34-400,127 byv34-400.pdf
BYV34-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
на замовлення 1479 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+110.32 грн
10+77.98 грн
21+45.10 грн
57+42.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV29-400,127 _ween_psg2020.pdf BYV29-400.pdf
BYV29-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.9V
Load current: 9A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.15...1.4mm
Case: SOD59; TO220AC
на замовлення 464 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+59.28 грн
10+45.33 грн
33+27.75 грн
91+26.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYV74W-400,127 byv74w-400.pdf
BYV74W-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
на замовлення 294 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+77.21 грн
16+58.87 грн
43+55.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV30B-600PJ byv30b-600p.pdf
BYV30B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
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WNSCM80120R6Q WNSCM80120R6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M30120R6Q WNSC2M30120R6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M60120R6Q WNSC2M60120R6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43.2A; Idm: 120A; 417W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43.2A
Pulsed drain current: 120A
Power dissipation: 417W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M75120R6Q WNSC2M75120R6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BT139-800.127 BT139-800.pdf _ween_psg2020.pdf
BT139-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BYV42G-200,127 byv42g-200.pdf
BYV42G-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: I2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
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NCR100Q-6MX NCR100Q-6M_0.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
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NCR100W-12LX ncr100w-12l.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10LX ncr100w-10l.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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NCR100W-10MX ncr100w-10m.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
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BTA140-600.127 BTA140-600.pdf _ween_psg2020.pdf
BTA140-600.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. forward impulse current: 190A
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BUJ103A,127
BUJ103A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
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BUJ103AX,127 PHGLS23441-1.pdf?t.download=true&u=5oefqw
BUJ103AX,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
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BUJ103AD,118 BUJ103AD.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
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BTA201-600B,112 BTA201-600B%2C112.pdf
BTA201-600B,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 50mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
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