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BYC75W-600PT2Q BYC75W-600PT2Q WeEn Semiconductors BYC75W-600PT2.pdf Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
2+264.16 грн
30+139.73 грн
120+114.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYC75W-600PQ BYC75W-600PQ WeEn Semiconductors byc75w-600p.pdf Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 851 шт:
термін постачання 21-31 дні (днів)
1+314.47 грн
30+168.24 грн
120+138.60 грн
510+109.67 грн
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BTA204W-600E,135 BTA204W-600E,135 WeEn Semiconductors PHGLS30330-1.pdf?t.download=true&u=5oefqw Description: TRIAC SENS GATE 600V 1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 12 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 11A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: SOT-223
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
на замовлення 6558 шт:
термін постачання 21-31 дні (днів)
888+22.72 грн
Мінімальне замовлення: 888
В кошику  од. на суму  грн.
BTA208-800F,127 BTA208-800F,127 WeEn Semiconductors PHGLS22665-1.pdf?t.download=true&u=5oefqw Description: TRIAC 800V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
537+37.70 грн
Мінімальне замовлення: 537
В кошику  од. на суму  грн.
P6SMBJ9.0AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ9.0A/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.1V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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P6SMBJ43CAJ WeEn Semiconductors P6SMBJ%20Series%20Product%20Rev.03.pdf Description: TVS DIODE 43VWM 69.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ43CAJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: TVS DIODE 43VWM 69.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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P1KSMBJ43CAJ WeEn Semiconductors P1KSMBJ%20Series.pdf Description: TVS DIODE 36.8VWM 59.3VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товару немає в наявності
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SOD17CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD17CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
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SOD18CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD18CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD16CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD16CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.93V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD24CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD24CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.95V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
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SOD30CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD30CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.55V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD33CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD33CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.98V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD22CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD22CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.63V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
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SOD28CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD28CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.33V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
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SOD20CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD20CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.41V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
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P4SOD28CAX WeEn Semiconductors P4SOD%20Series_10.pdf Description: TVS DIODE 28VWM 45.4VC SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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ACTT8-800C0Q ACTT8-800C0Q WeEn Semiconductors ACTT8-800C0.pdf Description: TRIAC 800V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 88A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
товару немає в наявності
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P6SMBJ11AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ11A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.32V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMDJ18AJ SMDJ18AJ WeEn Semiconductors SMDJ%20Series_17.pdf Description: SMDJ18A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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WNSC2D12650TJ WNSC2D12650TJ WeEn Semiconductors WNSC2D12650T.pdf Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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WNSC2D12650TJ WNSC2D12650TJ WeEn Semiconductors WNSC2D12650T.pdf Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
2+300.32 грн
10+190.78 грн
100+135.03 грн
500+104.41 грн
1000+97.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
WNSC2D04650XQ WNSC2D04650XQ WeEn Semiconductors Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2696 шт:
термін постачання 21-31 дні (днів)
3+132.86 грн
50+61.47 грн
100+55.00 грн
500+40.96 грн
1000+37.53 грн
2000+34.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
WNSC2D08650Q WNSC2D08650Q WeEn Semiconductors WNSC2D08650.pdf Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
2+179.25 грн
50+93.30 грн
100+85.11 грн
500+66.18 грн
1000+61.72 грн
2000+61.42 грн
Мінімальне замовлення: 2
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WNSC2D10650TJ WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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WNSC2D10650TJ WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
2+254.72 грн
10+160.57 грн
100+112.48 грн
500+86.29 грн
Мінімальне замовлення: 2
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WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+32.53 грн
Мінімальне замовлення: 2500
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WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 4561 шт:
термін постачання 21-31 дні (днів)
3+125.79 грн
10+76.99 грн
100+51.80 грн
500+38.48 грн
1000+35.22 грн
Мінімальне замовлення: 3
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WNSC2D0512006Q WNSC2D0512006Q WeEn Semiconductors WNSC2D051200.pdf Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
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WNSC2D10650XQ WNSC2D10650XQ WeEn Semiconductors Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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WNSC2D1012006Q WNSC2D1012006Q WeEn Semiconductors WNSC2D101200.pdf Description: DIODE SIL CARB 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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WNSC2D101200W6Q WNSC2D101200W6Q WeEn Semiconductors WNSC2D101200W.pdf Description: DIODE SIL CARB 1200V 10A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 490pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
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WNSC2D101200CW6Q WNSC2D101200CW6Q WeEn Semiconductors WNSC2D101200CW.pdf Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
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WNSC2D151200W6Q WNSC2D151200W6Q WeEn Semiconductors WNSC2D151200W.pdf Description: DIODE SIL CARB 1200V 15A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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WNSC2D2012006Q WNSC2D2012006Q WeEn Semiconductors WNSC2D201200.pdf Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 950pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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WNSC2D201200W6Q WNSC2D201200W6Q WeEn Semiconductors WNSC2D201200W.pdf Description: DIODE SIL CARB 1200V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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WNSC2D301200W6Q WNSC2D301200W6Q WeEn Semiconductors WNSC2D301200W.pdf Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1407pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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WNSC2D301200CW6Q WNSC2D301200CW6Q WeEn Semiconductors WNSC2D301200CW.pdf Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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WNSC2D401200CW6Q WNSC2D401200CW6Q WeEn Semiconductors WNSC2D401200CW.pdf Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 2000 V
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WNSC2D401200W6Q WNSC2D401200W6Q WeEn Semiconductors WNSC2D401200W.pdf Description: DIODE SIL CARB 1200V 40A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2068pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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SOD6.5CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD6.5CA/SOD123/REEL 7" Q1/T1 *
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.27V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMDJ43AJ SMDJ43AJ WeEn Semiconductors SMDJ%20Series_17.pdf Description: TVS DIODE 43VWM 69.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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P6SMBJ45AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ45A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ45AJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: SMBJ45A/SMB/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMBJ17CAJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ17CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ17CAJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: SMBJ17CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
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ACTT6X-800CNQ ACTT6X-800CNQ WeEn Semiconductors ACTT6X-800CN.pdf Description: TRIAC SENS GATE 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
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P6SMBJ40AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: TVS DIODE 40VWM 64.5VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMAJ64CAJ WeEn Semiconductors SMAJ%20Series%5B63%5D_48.pdf Description: SMAJ64CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.6V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ45CAJ SMAJ45CAJ WeEn Semiconductors SMAJ%20Series%5B63%5D_48.pdf Description: TVS DIODE 45VWM 72.7VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ48CAJ SMAJ48CAJ WeEn Semiconductors SMAJ%20Series%5B63%5D_48.pdf Description: TVS DIODE 48VWM 77.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.7V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMBJ45CAJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: TVS DIODE 45VWM 72.7VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ78CAJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: TVS DIODE 78VWM 126VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 87.4V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMDJ64CAJ SMDJ64CAJ WeEn Semiconductors SMDJ%20Series_17.pdf Description: TVS DIODE 64VWM 103VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.1A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.6V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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WNSC5D06650X6Q WNSC5D06650X6Q WeEn Semiconductors Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 201pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
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BT234-600D,127 BT234-600D,127 WeEn Semiconductors bt234-600d.pdf Description: TRIAC 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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BT234-800D,127 BT234-800D,127 WeEn Semiconductors bt234-800d.pdf Description: TRIAC 800V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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BT236X-600G,127 BT236X-600G,127 WeEn Semiconductors bt236x-600g.pdf Description: TRIAC 600V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 600 V
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BT236X-800G/L02Q BT236X-800G/L02Q WeEn Semiconductors bt236x-800g.pdf Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
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BYC75W-600PT2Q BYC75W-600PT2.pdf
BYC75W-600PT2Q
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.16 грн
30+139.73 грн
120+114.36 грн
Мінімальне замовлення: 2
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BYC75W-600PQ byc75w-600p.pdf
BYC75W-600PQ
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 851 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+314.47 грн
30+168.24 грн
120+138.60 грн
510+109.67 грн
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BTA204W-600E,135 PHGLS30330-1.pdf?t.download=true&u=5oefqw
BTA204W-600E,135
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 600V 1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 12 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 11A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: SOT-223
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
на замовлення 6558 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
888+22.72 грн
Мінімальне замовлення: 888
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BTA208-800F,127 PHGLS22665-1.pdf?t.download=true&u=5oefqw
BTA208-800F,127
Виробник: WeEn Semiconductors
Description: TRIAC 800V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
537+37.70 грн
Мінімальне замовлення: 537
В кошику  од. на суму  грн.
P6SMBJ9.0AJ P6SMBJ%20Series.pdf
Виробник: WeEn Semiconductors
Description: P6SMBJ9.0A/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.1V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMBJ43CAJ P6SMBJ%20Series%20Product%20Rev.03.pdf
Виробник: WeEn Semiconductors
Description: TVS DIODE 43VWM 69.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ43CAJ SMBJ%20Series_132.pdf
Виробник: WeEn Semiconductors
Description: TVS DIODE 43VWM 69.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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P1KSMBJ43CAJ P1KSMBJ%20Series.pdf
Виробник: WeEn Semiconductors
Description: TVS DIODE 36.8VWM 59.3VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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SOD17CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD17CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD18CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD18CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD16CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD16CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.93V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD24CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD24CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.95V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD30CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD30CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.55V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD33CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD33CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.98V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD22CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD22CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.63V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD28CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD28CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.33V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
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SOD20CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD20CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.41V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
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P4SOD28CAX P4SOD%20Series_10.pdf
Виробник: WeEn Semiconductors
Description: TVS DIODE 28VWM 45.4VC SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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ACTT8-800C0Q ACTT8-800C0.pdf
ACTT8-800C0Q
Виробник: WeEn Semiconductors
Description: TRIAC 800V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 88A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
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P6SMBJ11AJ P6SMBJ%20Series.pdf
Виробник: WeEn Semiconductors
Description: P6SMBJ11A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.32V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMDJ18AJ SMDJ%20Series_17.pdf
SMDJ18AJ
Виробник: WeEn Semiconductors
Description: SMDJ18A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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WNSC2D12650TJ WNSC2D12650T.pdf
WNSC2D12650TJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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WNSC2D12650TJ WNSC2D12650T.pdf
WNSC2D12650TJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+300.32 грн
10+190.78 грн
100+135.03 грн
500+104.41 грн
1000+97.24 грн
Мінімальне замовлення: 2
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WNSC2D04650XQ
WNSC2D04650XQ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2696 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.86 грн
50+61.47 грн
100+55.00 грн
500+40.96 грн
1000+37.53 грн
2000+34.65 грн
Мінімальне замовлення: 3
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WNSC2D08650Q WNSC2D08650.pdf
WNSC2D08650Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.25 грн
50+93.30 грн
100+85.11 грн
500+66.18 грн
1000+61.72 грн
2000+61.42 грн
Мінімальне замовлення: 2
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WNSC2D10650TJ WNSC2D10650T.pdf
WNSC2D10650TJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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WNSC2D10650TJ WNSC2D10650T.pdf
WNSC2D10650TJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+254.72 грн
10+160.57 грн
100+112.48 грн
500+86.29 грн
Мінімальне замовлення: 2
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WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+32.53 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 4561 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.79 грн
10+76.99 грн
100+51.80 грн
500+38.48 грн
1000+35.22 грн
Мінімальне замовлення: 3
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WNSC2D0512006Q WNSC2D051200.pdf
WNSC2D0512006Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
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WNSC2D10650XQ
WNSC2D10650XQ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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WNSC2D1012006Q WNSC2D101200.pdf
WNSC2D1012006Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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WNSC2D101200W6Q WNSC2D101200W.pdf
WNSC2D101200W6Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 10A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 490pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
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WNSC2D101200CW6Q WNSC2D101200CW.pdf
WNSC2D101200CW6Q
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
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WNSC2D151200W6Q WNSC2D151200W.pdf
WNSC2D151200W6Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 15A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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WNSC2D2012006Q WNSC2D201200.pdf
WNSC2D2012006Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 950pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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WNSC2D201200W6Q WNSC2D201200W.pdf
WNSC2D201200W6Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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WNSC2D301200W6Q WNSC2D301200W.pdf
WNSC2D301200W6Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1407pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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WNSC2D301200CW6Q WNSC2D301200CW.pdf
WNSC2D301200CW6Q
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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WNSC2D401200CW6Q WNSC2D401200CW.pdf
WNSC2D401200CW6Q
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 2000 V
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WNSC2D401200W6Q WNSC2D401200W.pdf
WNSC2D401200W6Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 40A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2068pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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SOD6.5CAX SOD%20Series_19.pdf
Виробник: WeEn Semiconductors
Description: SOD6.5CA/SOD123/REEL 7" Q1/T1 *
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.27V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMDJ43AJ SMDJ%20Series_17.pdf
SMDJ43AJ
Виробник: WeEn Semiconductors
Description: TVS DIODE 43VWM 69.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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P6SMBJ45AJ P6SMBJ%20Series.pdf
Виробник: WeEn Semiconductors
Description: P6SMBJ45A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ45AJ SMBJ%20Series_132.pdf
Виробник: WeEn Semiconductors
Description: SMBJ45A/SMB/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMBJ17CAJ P6SMBJ%20Series.pdf
Виробник: WeEn Semiconductors
Description: P6SMBJ17CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ17CAJ SMBJ%20Series_132.pdf
Виробник: WeEn Semiconductors
Description: SMBJ17CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
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ACTT6X-800CNQ ACTT6X-800CN.pdf
ACTT6X-800CNQ
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
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P6SMBJ40AJ P6SMBJ%20Series.pdf
Виробник: WeEn Semiconductors
Description: TVS DIODE 40VWM 64.5VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMAJ64CAJ SMAJ%20Series%5B63%5D_48.pdf
Виробник: WeEn Semiconductors
Description: SMAJ64CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.6V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ45CAJ SMAJ%20Series%5B63%5D_48.pdf
SMAJ45CAJ
Виробник: WeEn Semiconductors
Description: TVS DIODE 45VWM 72.7VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ48CAJ SMAJ%20Series%5B63%5D_48.pdf
SMAJ48CAJ
Виробник: WeEn Semiconductors
Description: TVS DIODE 48VWM 77.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.7V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMBJ45CAJ SMBJ%20Series_132.pdf
Виробник: WeEn Semiconductors
Description: TVS DIODE 45VWM 72.7VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ78CAJ SMBJ%20Series_132.pdf
Виробник: WeEn Semiconductors
Description: TVS DIODE 78VWM 126VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 87.4V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMDJ64CAJ SMDJ%20Series_17.pdf
SMDJ64CAJ
Виробник: WeEn Semiconductors
Description: TVS DIODE 64VWM 103VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.1A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.6V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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WNSC5D06650X6Q
WNSC5D06650X6Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 201pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
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BT234-600D,127 bt234-600d.pdf
BT234-600D,127
Виробник: WeEn Semiconductors
Description: TRIAC 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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BT234-800D,127 bt234-800d.pdf
BT234-800D,127
Виробник: WeEn Semiconductors
Description: TRIAC 800V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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BT236X-600G,127 bt236x-600g.pdf
BT236X-600G,127
Виробник: WeEn Semiconductors
Description: TRIAC 600V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 600 V
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BT236X-800G/L02Q bt236x-800g.pdf
BT236X-800G/L02Q
Виробник: WeEn Semiconductors
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
товару немає в наявності
В кошику  од. на суму  грн.
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