Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5620) > Сторінка 89 з 94
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BT138-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA204X-800C/L03Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA416X-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 160A Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA410-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA416X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 160A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA408X-1000C0T,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Mounting: THT Gate current: 35mA Max. load current: 8A Max. forward impulse current: 100A Max. off-state voltage: 1kV Technology: 3Q; Hi-Com Case: TO220FP Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT134W-800EF | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 2A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3614 шт: термін постачання 14-30 дні (днів) |
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| SMAJ5.0CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.45...6.98V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 0.4mA Manufacturer series: SMAJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT138Y-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 829 шт: термін постачання 14-30 дні (днів) |
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| BT136-600D/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube Max. forward impulse current: 25A Technology: 4Q |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT136-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA208-800B/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT151-650LTFQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT151S-650SJ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 0.2mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169D/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack Mounting: THT Case: TO92 Kind of package: Ammo Pack Gate current: 0.2mA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.4kV Type of thyristor: thyristor Quantity in set/package: 2000pcs. Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G-L,412 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G-MQP | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169H-LML | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169H/01U | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT137-800G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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BYV42E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 28ns |
на замовлення 719 шт: термін постачання 14-30 дні (днів) |
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| WNSC5D20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 100A Kind of package: tube Max. load current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA208X-1000C0,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: high commutation Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA208X-1000C0/L01 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: high commutation Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA208S-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA208X-800B/L02Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA445Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Features of semiconductor devices: high temperature Case: SOT1292; TO3P Mounting: THT Type of thyristor: triac Kind of package: tube Gate current: 50mA Max. load current: 45A Max. forward impulse current: 495A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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WNSC5D20650X6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. forward impulse current: 80A Kind of package: tube Max. load current: 40A |
на замовлення 844 шт: термін постачання 14-30 дні (днів) |
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OT412,115 | WeEn Semiconductors |
Category: Triacs Description: Triac; 1A; SOT223; 4Q; sensitive gate Type of thyristor: triac Max. load current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 776 шт: термін постачання 14-30 дні (днів) |
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BTA208S-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 6533 шт: термін постачання 14-30 дні (днів) |
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BTA208S-800F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-800F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208S-600D,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208X-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208X-800F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC126506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 72A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC12650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 72A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA416B-800BTJ | WeEn Semiconductors |
Category: Unclassified Description: BTA416B-800BTJ |
на замовлення 4800 шт: термін постачання 14-30 дні (днів) |
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BYV29-500.127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV29-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
на замовлення 637 шт: термін постачання 14-30 дні (днів) |
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BYV79E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 160A Case: SOD59; TO220AC Max. forward voltage: 0.83V Heatsink thickness: max. 1.3mm Reverse recovery time: 30ns |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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BYC15-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 19ns |
на замовлення 323 шт: термін постачання 14-30 дні (днів) |
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BYC15-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 18ns Max. load current: 30A |
на замовлення 776 шт: термін постачання 14-30 дні (днів) |
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BTA216-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMAJ18AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20.19...21.9V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ACT108W-600E,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD Type of thyristor: AC switch Max. load current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Gate current: 10mA Max. off-state voltage: 0.6kV Features of semiconductor devices: internally triggered |
на замовлення 2239 шт: термін постачання 14-30 дні (днів) |
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ACT108W-600D,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD Type of thyristor: AC switch Max. load current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Gate current: 5mA Max. off-state voltage: 0.6kV Features of semiconductor devices: internally triggered |
на замовлення 3805 шт: термін постачання 14-30 дні (днів) |
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| MURS160BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYC15X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 39ns |
на замовлення 974 шт: термін постачання 14-30 дні (днів) |
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BYC15X-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYC15-1200PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 61ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BYC15M-650PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2.3V Reverse recovery time: 14ns Max. load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYV32EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 137A Case: D2PAK; SOT404 Max. forward voltage: 0.72V Max. load current: 20A Reverse recovery time: 25ns |
на замовлення 327 шт: термін постачання 14-30 дні (днів) |
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BYV10MX-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: tube Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT145-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Load current: 16A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 0.3kA Turn-on time: 2µs |
на замовлення 3093 шт: термін постачання 14-30 дні (днів) |
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| BT138-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA204X-800C/L03Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA416X-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA410-800BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA416X-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA408X-1000C0T,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Mounting: THT
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Case: TO220FP
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Mounting: THT
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Case: TO220FP
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT134W-800EF |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3614 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.35 грн |
| 16+ | 27.42 грн |
| 100+ | 16.40 грн |
| 250+ | 14.72 грн |
| 500+ | 13.12 грн |
| 1000+ | 11.78 грн |
| SMAJ5.0CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.4mA
Manufacturer series: SMAJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.4mA
Manufacturer series: SMAJ
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BT138Y-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 829 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.98 грн |
| 11+ | 39.87 грн |
| 50+ | 35.50 грн |
| 250+ | 31.88 грн |
| 500+ | 29.78 грн |
| BT136-600D/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
товару немає в наявності
В кошику
од. на суму грн.
| BT136-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208-800B/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT151-650LTFQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| BT151S-650SJ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
товару немає в наявності
В кошику
од. на суму грн.
| BT169D/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Gate current: 0.2mA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Type of thyristor: thyristor
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Gate current: 0.2mA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Type of thyristor: thyristor
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| BT169G-L,412 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169G-MQP |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169G/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169H-LML |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
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| BT169H/01U |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
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| BT137-800G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
на замовлення 950 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| 13+ | 34.32 грн |
| 50+ | 30.03 грн |
| 250+ | 25.91 грн |
| 500+ | 24.23 грн |
| BYV42E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
на замовлення 719 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.62 грн |
| 8+ | 58.88 грн |
| 10+ | 49.63 грн |
| 50+ | 47.95 грн |
| WNSC5D20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
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| BTA208X-1000C0,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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| BTA208X-1000C0/L01 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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од. на суму грн.
| BTA208S-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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| BTA208X-800B/L02Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA445Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Features of semiconductor devices: high temperature
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Features of semiconductor devices: high temperature
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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| WNSC5D20650X6Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
на замовлення 844 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 170.31 грн |
| 5+ | 141.32 грн |
| 25+ | 125.34 грн |
| 100+ | 112.72 грн |
| OT412,115 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 26+ | 17.48 грн |
| 32+ | 13.29 грн |
| 100+ | 11.69 грн |
| 250+ | 11.27 грн |
| BTA208S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 6533 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.00 грн |
| 10+ | 53.84 грн |
| 25+ | 45.34 грн |
| 50+ | 39.79 грн |
| 100+ | 35.25 грн |
| 250+ | 30.70 грн |
| 500+ | 27.84 грн |
| 1000+ | 25.57 грн |
| 2500+ | 23.22 грн |
| BTA208S-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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| BTA208-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA208X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA208-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA208-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA208-800F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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В кошику
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| BTA208S-600D,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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| BTA208X-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA208X-800F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| NXPSC126506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
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| NXPSC12650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
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| BTA416B-800BTJ |
на замовлення 4800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1600+ | 35.96 грн |
| BYV29-500.127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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| BYV29-500,127 |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 637 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.88 грн |
| 11+ | 41.72 грн |
| 12+ | 35.41 грн |
| 25+ | 29.53 грн |
| BYV79E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
на замовлення 185 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 74.28 грн |
| 8+ | 52.83 грн |
| 10+ | 43.49 грн |
| 25+ | 33.82 грн |
| 50+ | 31.71 грн |
| BYC15-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
на замовлення 323 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.73 грн |
| 11+ | 39.70 грн |
| 25+ | 34.99 грн |
| 100+ | 34.91 грн |
| BYC15-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
на замовлення 776 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 64.32 грн |
| 13+ | 34.32 грн |
| 50+ | 32.81 грн |
| BTA216-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| SMAJ18AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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| ACT108W-600E,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
на замовлення 2239 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.18 грн |
| 27+ | 15.81 грн |
| 50+ | 13.21 грн |
| 100+ | 13.12 грн |
| ACT108W-600D,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
на замовлення 3805 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.76 грн |
| 18+ | 23.55 грн |
| 28+ | 15.23 грн |
| 100+ | 14.38 грн |
| 500+ | 12.70 грн |
| MURS160BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
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| BYC15X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
на замовлення 974 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.88 грн |
| 10+ | 45.09 грн |
| 25+ | 39.37 грн |
| 100+ | 36.09 грн |
| BYC15X-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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| BYC15-1200PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
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од. на суму грн.
| BYC15M-650PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
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| BYV32EB-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 137A
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 137A
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
на замовлення 327 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.26 грн |
| 10+ | 76.13 грн |
| 50+ | 60.40 грн |
| 60+ | 58.88 грн |
| 100+ | 54.93 грн |
| 250+ | 48.45 грн |
| BYV10MX-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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В кошику
од. на суму грн.
| BT145-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
на замовлення 3093 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.02 грн |
| 5+ | 124.49 грн |
| 10+ | 108.51 грн |
| 25+ | 90.85 грн |
| 50+ | 79.91 грн |
| 100+ | 71.50 грн |
| 500+ | 57.20 грн |
| 1000+ | 53.84 грн |
| 2000+ | 50.47 грн |












