Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74093) > Сторінка 1166 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BAV199Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.16A Reverse recovery time: 3µs Semiconductor structure: double series Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 4A Application: automotive industry Capacitance: 2pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BAV199TQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.125A x2 Reverse recovery time: 3µs Semiconductor structure: double series Features of semiconductor devices: small signal Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 4A Application: automotive industry Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMBJ58AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBTA13-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Manufacturer standard package: 3000pcs. |
на замовлення 323 шт: термін постачання 14-30 дні (днів) |
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SMBJ15CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU408 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU401 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU402 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC857A-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
на замовлення 3086 шт: термін постачання 14-30 дні (днів) |
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AP3302K6TR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; DC/DC switcher,PWM controller; 350mA; Ch: 1; SOT26 Case: SOT26 Mounting: SMD Kind of package: reel; tape Output current: 0.35A Type of integrated circuit: PMIC Operating temperature: -40...85°C Kind of integrated circuit: DC/DC switcher; PWM controller Number of channels: 1 |
на замовлення 1375 шт: термін постачання 14-30 дні (днів) |
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1N4448W-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 4pF Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4448HWT-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 3pF Case: SOD523 Max. forward voltage: 0.62V Max. load current: 0.25A Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 5974 шт: термін постачання 14-30 дні (днів) |
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1N4448HWS-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 3.5pF Case: SOD323 Max. forward voltage: 0.72V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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1N4448HLP-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.3A; 4ns; DFN2; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DFN2 Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 177 шт: термін постачання 14-30 дні (днів) |
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1N4448HWSQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 3.5pF Case: SOD323 Max. forward voltage: 0.72V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ZXMHC6A07T8TA | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 1.4/-1.2A Power dissipation: 1.36W Case: SO8 Gate-source voltage: ±20V On-state resistance: 250/400mΩ Mounting: SMD Gate charge: 3.2/5.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PAM8965ZLA40-13 | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 12W; stereo; Ch: 2; Amp.class: D; TQFN40 Operating temperature: -40...125°C Voltage supply range: 2.8...8.5V DC Amplifier class: D Kind of package: reel; tape Case: TQFN40 Number of channels: 2 Mounting: SMD Output power: 12W Type of integrated circuit: audio amplifier Integrated circuit features: stereo |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCR421UW6Q-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Case: SOT26 Mounting: SMD Kind of package: reel; tape Integrated circuit features: linear dimming; PWM Operating temperature: -55...150°C Output current: 10...350mA Number of channels: 1 Operating voltage: 1.4...40V DC Kind of integrated circuit: current regulator; LED driver Application: automotive industry Topology: single transistor Type of integrated circuit: driver |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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AP22653QW6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; USB switch; 1.5A; Ch: 1; SMD; SOT26; reel,tape Case: SOT26 On-state resistance: 135mΩ Mounting: SMD Kind of package: reel; tape Active logical level: high Output current: 1.5A Type of integrated circuit: power switch Operating temperature: -40...125°C Kind of integrated circuit: USB switch Number of channels: 1 Supply voltage: 3...5.5V DC |
на замовлення 1577 шт: термін постачання 14-30 дні (днів) |
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ZXMP6A17E6TA | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.4A; 1.1W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.4A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1723 шт: термін постачання 14-30 дні (днів) |
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MMBTA06-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 3000pcs. |
на замовлення 10669 шт: термін постачання 14-30 дні (днів) |
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BCP5116TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 1000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP51TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 1000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP5110TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 1000pcs. Frequency: 150MHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ58CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 6507 шт: термін постачання 14-30 дні (днів) |
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| SMAJ58CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE82CA-T | DIODES INCORPORATED |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 77.9÷86.1V; 13.3A; bidirectional; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 77.9...86.1V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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| 74LVC240AQ20-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; 8bit; Ch: 8; IN: 10; CMOS; SMD; V-QFN4525-20; -40÷150°C Type of integrated circuit: digital Technology: CMOS Case: V-QFN4525-20 Family: LVC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C Supply voltage: 1.65...3.6V DC Number of channels: 8 Number of inputs: 10 Kind of output: push-pull Kind of integrated circuit: 8bit |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5250BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 20V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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LMV331W5-7 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; SMT; SOT25; reel,tape; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Mounting: SMT Case: SOT25 Operating temperature: -40...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Voltage supply range: 2.7...5.5V DC |
на замовлення 240 шт: термін постачання 14-30 дні (днів) |
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LMV331SE-7 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; SMT; SOT353; reel,tape; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Mounting: SMT Case: SOT353 Operating temperature: -40...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Voltage supply range: 2.7...5.5V DC |
на замовлення 2004 шт: термін постачання 14-30 дні (днів) |
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| AP22817BKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Active logical level: low Output current: 1.5A Type of integrated circuit: power switch Operating temperature: -40...85°C Kind of package: reel; tape Case: TSOT25 Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 95mΩ Mounting: SMD Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| AP22817BKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Active logical level: low Output current: 1.5A Type of integrated circuit: power switch Operating temperature: -40...85°C Kind of package: reel; tape Case: TSOT25 Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 95mΩ Mounting: SMD Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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AP62300WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26 Input voltage: 4.2...18V DC Output voltage: 0.8...7V DC Output current: 3A Mounting: SMD Efficiency: 83% Operating temperature: -40...85°C Type of integrated circuit: PMIC Kind of package: reel; tape Case: TSOT26 Kind of integrated circuit: DC/DC converter Frequency: 750kHz Topology: buck |
на замовлення 535 шт: термін постачання 14-30 дні (днів) |
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AP2114H-3.3TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Number of channels: 1 Integrated circuit features: shutdown mode control input Kind of package: reel; tape Tolerance: ±1.5% Input voltage: 2.5...6V Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP2127N-3.3TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
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LMV393S-13 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -40...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Voltage supply range: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LMV393M8-13 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: MSOP8 Operating temperature: -40...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Voltage supply range: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BQ-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Application: automotive industry Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856B-13-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Manufacturer standard package: 10000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BW-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Manufacturer standard package: 10000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BWQ-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Application: automotive industry Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KBP208G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 65A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 65A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 234 шт: термін постачання 14-30 дні (днів) |
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US1D-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 2481 шт: термін постачання 14-30 дні (днів) |
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US1DWF-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 30ns; SOD123F; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 30ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.9V Kind of package: reel; tape Max. forward impulse current: 30A |
на замовлення 2908 шт: термін постачання 14-30 дні (днів) |
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US1DWFQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Capacitance: 14pF Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 3A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C4V7-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 4.7V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 2668 шт: термін постачання 14-30 дні (днів) |
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BZX84C4V7TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 4.7V; SMD; SOT363; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOT363 Kind of package: reel; tape Semiconductor structure: triple independent |
на замовлення 999 шт: термін постачання 14-30 дні (днів) |
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DMC3032LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-8.1A On-state resistance: 0.032/0.039Ω Power dissipation: 2.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 2180 шт: термін постачання 14-30 дні (днів) |
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SMBJ24CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ24CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ6.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 416 шт: термін постачання 14-30 дні (днів) |
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SMBJ85CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85V Breakdown voltage: 94.4...108.2V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ20CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ20A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 196 шт: термін постачання 14-30 дні (днів) |
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| PAM8016AKR | DIODES INCORPORATED |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9 Interface: PWM Operating voltage: 2.8...5.5V DC Type of integrated circuit: driver Operating temperature: -25...85°C Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA) Application: haptic motors; linear actuator; servos Case: U-FLGA1515-9 Kind of integrated circuit: haptic motor controller Topology: H-bridge Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ES2G-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ22A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1003 шт: термін постачання 14-30 дні (днів) |
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SMAJ22AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| P4SMAJ22ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| BAV199Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Capacitance: 2pF
товару немає в наявності
В кошику
од. на суму грн.
| BAV199TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Max. load current: 0.5A
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ58AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBTA13-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
на замовлення 323 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 47+ | 9.06 грн |
| 100+ | 5.11 грн |
| SMBJ15CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| GBU408 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| GBU401 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| GBU402 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| BC857A-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
на замовлення 3086 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.12 грн |
| 80+ | 5.33 грн |
| 125+ | 3.40 грн |
| 250+ | 2.85 грн |
| 500+ | 2.49 грн |
| 1000+ | 2.18 грн |
| 3000+ | 1.76 грн |
| AP3302K6TR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 350mA; Ch: 1; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Output current: 0.35A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 350mA; Ch: 1; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Output current: 0.35A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
на замовлення 1375 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.87 грн |
| 13+ | 35.21 грн |
| 15+ | 28.70 грн |
| 100+ | 16.42 грн |
| 500+ | 14.22 грн |
| 1000+ | 13.88 грн |
| 1N4448W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 1N4448HWT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 5974 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 49+ | 8.80 грн |
| 74+ | 5.72 грн |
| 100+ | 4.73 грн |
| 500+ | 3.15 грн |
| 1000+ | 2.71 грн |
| 3000+ | 2.22 грн |
| 1N4448HWS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.16 грн |
| 1N4448HLP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 177 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.73 грн |
| 31+ | 13.71 грн |
| 34+ | 12.70 грн |
| 100+ | 10.41 грн |
| 1N4448HWSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| ZXMHC6A07T8TA |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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| PAM8965ZLA40-13 |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 12W; stereo; Ch: 2; Amp.class: D; TQFN40
Operating temperature: -40...125°C
Voltage supply range: 2.8...8.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: TQFN40
Number of channels: 2
Mounting: SMD
Output power: 12W
Type of integrated circuit: audio amplifier
Integrated circuit features: stereo
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 12W; stereo; Ch: 2; Amp.class: D; TQFN40
Operating temperature: -40...125°C
Voltage supply range: 2.8...8.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: TQFN40
Number of channels: 2
Mounting: SMD
Output power: 12W
Type of integrated circuit: audio amplifier
Integrated circuit features: stereo
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од. на суму грн.
| BCR421UW6Q-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of integrated circuit: current regulator; LED driver
Application: automotive industry
Topology: single transistor
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of integrated circuit: current regulator; LED driver
Application: automotive industry
Topology: single transistor
Type of integrated circuit: driver
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 84.65 грн |
| AP22653QW6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 1.5A; Ch: 1; SMD; SOT26; reel,tape
Case: SOT26
On-state resistance: 135mΩ
Mounting: SMD
Kind of package: reel; tape
Active logical level: high
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Kind of integrated circuit: USB switch
Number of channels: 1
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 1.5A; Ch: 1; SMD; SOT26; reel,tape
Case: SOT26
On-state resistance: 135mΩ
Mounting: SMD
Kind of package: reel; tape
Active logical level: high
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Kind of integrated circuit: USB switch
Number of channels: 1
Supply voltage: 3...5.5V DC
на замовлення 1577 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.64 грн |
| 19+ | 22.77 грн |
| 25+ | 20.65 грн |
| 50+ | 19.30 грн |
| 100+ | 18.20 грн |
| 250+ | 17.35 грн |
| ZXMP6A17E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; 1.1W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.4A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; 1.1W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.4A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1723 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.02 грн |
| 15+ | 29.80 грн |
| 50+ | 23.79 грн |
| 100+ | 22.01 грн |
| 250+ | 20.15 грн |
| 500+ | 18.28 грн |
| 1000+ | 16.59 грн |
| MMBTA06-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
на замовлення 10669 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 50+ | 8.63 грн |
| 73+ | 5.81 грн |
| 100+ | 4.80 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.67 грн |
| 1500+ | 2.46 грн |
| 3000+ | 2.19 грн |
| 9000+ | 1.86 грн |
| BCP5116TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
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од. на суму грн.
| BCP51TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
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од. на суму грн.
| BCP5110TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SMAJ58CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 6507 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 24+ | 17.78 грн |
| 28+ | 15.41 грн |
| 100+ | 9.31 грн |
| 500+ | 7.03 грн |
| 1000+ | 6.43 грн |
| 2500+ | 5.84 грн |
| 5000+ | 5.50 грн |
| SMAJ58CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 1.5KE82CA-T |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 77.9÷86.1V; 13.3A; bidirectional; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 77.9...86.1V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 77.9÷86.1V; 13.3A; bidirectional; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 77.9...86.1V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.61 грн |
| 25+ | 20.57 грн |
| 74LVC240AQ20-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 8; IN: 10; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: V-QFN4525-20
Family: LVC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...3.6V DC
Number of channels: 8
Number of inputs: 10
Kind of output: push-pull
Kind of integrated circuit: 8bit
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 8; IN: 10; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: V-QFN4525-20
Family: LVC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...3.6V DC
Number of channels: 8
Number of inputs: 10
Kind of output: push-pull
Kind of integrated circuit: 8bit
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MMSZ5250BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 180+ | 2.55 грн |
| 315+ | 1.35 грн |
| 500+ | 1.19 грн |
| LMV331W5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; SMT; SOT25; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; SMT; SOT25; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.32 грн |
| 33+ | 13.04 грн |
| 37+ | 11.60 грн |
| 43+ | 9.90 грн |
| 100+ | 8.21 грн |
| LMV331SE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; SMT; SOT353; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: SOT353
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; SMT; SOT353; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: SOT353
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
на замовлення 2004 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 34+ | 12.53 грн |
| 39+ | 11.00 грн |
| 48+ | 8.97 грн |
| 100+ | 7.11 грн |
| AP22817BKBWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Active logical level: low
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Active logical level: low
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22817BKEWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Active logical level: low
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Active logical level: low
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
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Мінімальне замовлення: 3000 шт
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| AP62300WU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 3A
Mounting: SMD
Efficiency: 83%
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: DC/DC converter
Frequency: 750kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 3A
Mounting: SMD
Efficiency: 83%
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: DC/DC converter
Frequency: 750kHz
Topology: buck
на замовлення 535 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.35 грн |
| 24+ | 17.69 грн |
| 27+ | 15.75 грн |
| 50+ | 14.56 грн |
| 100+ | 13.88 грн |
| 250+ | 13.54 грн |
| AP2114H-3.3TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Number of channels: 1
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Tolerance: ±1.5%
Input voltage: 2.5...6V
Operating temperature: -40...85°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Number of channels: 1
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Tolerance: ±1.5%
Input voltage: 2.5...6V
Operating temperature: -40...85°C
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| AP2127N-3.3TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.94 грн |
| 49+ | 8.80 грн |
| 55+ | 7.79 грн |
| 65+ | 6.60 грн |
| 100+ | 5.33 грн |
| 250+ | 5.08 грн |
| LMV393S-13 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
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| LMV393M8-13 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
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| BC856BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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| BC856B-13-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
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| BC856BW-13-F |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
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| BC856BWQ-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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| KBP208G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 65A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 65A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 234 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.46 грн |
| 35+ | 19.72 грн |
| 105+ | 19.47 грн |
| US1D-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 2481 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.23 грн |
| 36+ | 12.02 грн |
| 50+ | 10.33 грн |
| 100+ | 9.65 грн |
| 500+ | 8.13 грн |
| 1000+ | 7.45 грн |
| US1DWF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 30ns; SOD123F; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.9V
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 30ns; SOD123F; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.9V
Kind of package: reel; tape
Max. forward impulse current: 30A
на замовлення 2908 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.73 грн |
| 18+ | 24.21 грн |
| 21+ | 20.91 грн |
| 100+ | 13.63 грн |
| 500+ | 10.84 грн |
| 1000+ | 9.73 грн |
| US1DWFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Capacitance: 14pF
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 3A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Capacitance: 14pF
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 3A
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| BZT52C4V7-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2668 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.38 грн |
| 93+ | 4.57 грн |
| 105+ | 4.06 грн |
| 134+ | 3.17 грн |
| 145+ | 2.93 грн |
| 500+ | 2.47 грн |
| 1000+ | 2.13 грн |
| BZX84C4V7TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOT363; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOT363; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
на замовлення 999 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.00 грн |
| 18+ | 23.53 грн |
| 21+ | 20.40 грн |
| 100+ | 11.43 грн |
| 500+ | 8.04 грн |
| DMC3032LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.1A
On-state resistance: 0.032/0.039Ω
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.1A
On-state resistance: 0.032/0.039Ω
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2180 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.40 грн |
| 14+ | 31.66 грн |
| 100+ | 18.28 грн |
| 500+ | 13.12 грн |
| 1000+ | 12.11 грн |
| SMBJ24CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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| SMBJ24CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ6.0A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 416 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 50+ | 8.63 грн |
| 57+ | 7.45 грн |
| 100+ | 5.23 грн |
| 150+ | 5.10 грн |
| SMBJ85CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ20CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMBJ20A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 25+ | 17.44 грн |
| 28+ | 15.41 грн |
| 100+ | 9.99 грн |
| PAM8016AKR |
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Виробник: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Interface: PWM
Operating voltage: 2.8...5.5V DC
Type of integrated circuit: driver
Operating temperature: -25...85°C
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Application: haptic motors; linear actuator; servos
Case: U-FLGA1515-9
Kind of integrated circuit: haptic motor controller
Topology: H-bridge
Mounting: SMD
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Interface: PWM
Operating voltage: 2.8...5.5V DC
Type of integrated circuit: driver
Operating temperature: -25...85°C
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Application: haptic motors; linear actuator; servos
Case: U-FLGA1515-9
Kind of integrated circuit: haptic motor controller
Topology: H-bridge
Mounting: SMD
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| ES2G-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
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од. на суму грн.
| SMAJ22A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1003 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 31+ | 13.88 грн |
| 37+ | 11.68 грн |
| 100+ | 7.20 грн |
| 500+ | 5.93 грн |
| 1000+ | 5.67 грн |
| SMAJ22AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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| P4SMAJ22ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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од. на суму грн.
































