Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74522) > Сторінка 1168 з 1243

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DF08S-T DF08S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 1349 шт:
термін постачання 14-30 дні (днів)
7+70.73 грн
10+43.15 грн
25+36.19 грн
63+15.33 грн
172+14.49 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
SMBJ14A-13-F SMBJ14A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
20+22.56 грн
25+17.43 грн
28+15.42 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SMBJ14AQ-13-F SMBJ14AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMJT9435-13 DMJT9435-13 DIODES INCORPORATED DMJT9435.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Collector current: 3A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 30V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 6A
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
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SMCJ12A-13-F SMCJ12A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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SMBJ12A-13-F SMBJ12A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1977 шт:
термін постачання 14-30 дні (днів)
22+20.57 грн
32+13.40 грн
100+9.80 грн
125+9.55 грн
147+6.53 грн
402+6.20 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
SMCJ28A-13-F SMCJ28A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5898 шт:
термін постачання 14-30 дні (днів)
9+54.13 грн
11+38.87 грн
13+34.27 грн
72+13.32 грн
196+12.65 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
3.0SMCJ28A-13 3.0SMCJ28A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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DDTA123JCA-7-F DDTA123JCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
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DDA123JU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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DDA123JH-7 DIODES INCORPORATED ds30420.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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SMAJ54A-13-F SMAJ54A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1873 шт:
термін постачання 14-30 дні (днів)
27+17.14 грн
39+10.97 грн
100+5.38 грн
1000+4.18 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
SMAJ51A-13-F SMAJ51A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
24+18.95 грн
29+14.74 грн
33+13.07 грн
100+7.88 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
SMAJ51CA-13-F SMAJ51CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
13+36.99 грн
18+23.63 грн
23+18.77 грн
31+13.57 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
AZ23C5V6-7-F AZ23C5V6-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
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BZT52C5V6S-7-F BZT52C5V6S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED ZXMHC10A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Power dissipation: 0.87W
Polarisation: unipolar
Features of semiconductor devices: MOSFET H-Bridge
Drain current: 0.9/-0.7A
Kind of channel: enhancement
Drain-source voltage: 100/-100V
Type of transistor: N/P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 0.9/1.45Ω
Mounting: SMD
на замовлення 2047 шт:
термін постачання 14-30 дні (днів)
6+77.59 грн
10+60.24 грн
50+50.94 грн
100+46.83 грн
500+43.40 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMHC4035LSDQ-13 DMHC4035LSDQ-13 DIODES INCORPORATED DMHC4035LSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMHC6A07N8TC ZXMHC6A07N8TC DIODES INCORPORATED ZXMHC6A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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ZXMHC3F381N8TC ZXMHC3F381N8TC DIODES INCORPORATED ZXMHC3F381N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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DSS3540M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
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DSS3515M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3515M-7B DIODES INCORPORATED DSS3515M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3540M-7B DIODES INCORPORATED DSS3540M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
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AH49EZ3-G1 DIODES INCORPORATED AH49E.pdf Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷85°C
Type of sensor: Hall
Mounting: THT
Operating temperature: -40...85°C
на замовлення 51000 шт:
термін постачання 14-30 дні (днів)
1000+19.40 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED DMC3028LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC1018UPDWQ-13 DIODES INCORPORATED DMC1018UPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
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 Мінімальне замовлення: 2500 шт
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DMC1018UPD-13 DIODES INCORPORATED DMC1018UPD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
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 Мінімальне замовлення: 2500 шт
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BZT52C12Q-7-F BZT52C12Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
на замовлення 2289 шт:
термін постачання 14-30 дні (днів)
39+11.73 грн
74+5.70 грн
82+5.13 грн
90+4.66 грн
102+4.11 грн
328+2.90 грн
902+2.74 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
BZT52C12SQ-7-F BZT52C12SQ-7-F DIODES INCORPORATED Ds30093-R20.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C12T-7 BZT52C12T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C12TQ-7-F BZT52C12TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C12Q-13-F BZT52C12Q-13-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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 Мінімальне замовлення: 10000 шт
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MMBTA06Q-7-F MMBTA06Q-7-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Application: automotive industry
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AP2112M-3.3TRG1 AP2112M-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
AP2112R5-3.3TRG1 AP2112R5-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AP2112R5A-3.3TRG1 AP2112R5A-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AP2112R5-1.2TRG1 AP2112R5-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
ZVP3310FTA ZVP3310FTA DIODES INCORPORATED ZVP3310F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Mounting: SMD
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Polarisation: unipolar
Drain current: -0.14A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 20Ω
на замовлення 273 шт:
термін постачання 14-30 дні (днів)
8+58.64 грн
12+35.44 грн
25+29.15 грн
100+22.12 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
74AHC1G125W5-7 74AHC1G125W5-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
на замовлення 123 шт:
термін постачання 14-30 дні (днів)
42+10.83 грн
55+7.71 грн
65+6.53 грн
79+5.33 грн
90+4.67 грн
100+4.21 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
74LVC1G125W5-7 74LVC1G125W5-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
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74AHC1G125SE-7 74AHC1G125SE-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
на замовлення 5978 шт:
термін постачання 14-30 дні (днів)
46+9.92 грн
62+6.79 грн
75+5.63 грн
100+4.37 грн
200+3.94 грн
250+3.82 грн
327+2.94 грн
898+2.78 грн
3000+2.77 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
74AHCT1G125SE-7 74AHCT1G125SE-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+451.11 грн
В кошику  од. на суму  грн.
74AHCT1G125W5-7 74AHCT1G125W5-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
39+11.73 грн
50+8.55 грн
57+7.37 грн
70+6.07 грн
79+5.33 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
74LVC1G125SE-7 74LVC1G125SE-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
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74LVC1G125Z-7 74LVC1G125Z-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
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74LVC1G125FW4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
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74LVC1G125FZ4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
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74AUP1G125FS3-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FW5-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FX4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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 Мінімальне замовлення: 5 шт
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74AUP1G125FZ4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
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SMAJ28CA-13-F SMAJ28CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 843 шт:
термін постачання 14-30 дні (днів)
17+27.97 грн
24+17.93 грн
27+15.58 грн
100+10.22 грн
500+7.88 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
SMAJ28A-13-F SMAJ28A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 7390 шт:
термін постачання 14-30 дні (днів)
28+16.24 грн
38+11.23 грн
43+9.80 грн
100+7.09 грн
218+4.37 грн
600+4.14 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMAJ28CAQ-13-F SMAJ28CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ28AQ-13-F SMAJ28AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED DMTH6004SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3.8mΩ
Mounting: SMD
Power dissipation: 3.9W
Polarisation: unipolar
на замовлення 557 шт:
термін постачання 14-30 дні (днів)
4+147.96 грн
10+77.08 грн
15+64.51 грн
41+61.16 грн
100+59.48 грн
500+58.64 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMTH4004SCTB-13 DIODES INCORPORATED DMTH4004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH4004SCTBQ-13 DIODES INCORPORATED DMTH4004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH6004SCTB-13 DIODES INCORPORATED DMTH6004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3.4mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DF08S-T DF005_10S.pdf
DF08S-T
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 1349 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+70.73 грн
10+43.15 грн
25+36.19 грн
63+15.33 грн
172+14.49 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
SMBJ14A-13-F SMBJ_ser.pdf
SMBJ14A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.56 грн
25+17.43 грн
28+15.42 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SMBJ14AQ-13-F ds40740.pdf
SMBJ14AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMJT9435-13 DMJT9435.pdf
DMJT9435-13
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Collector current: 3A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 30V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 6A
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
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SMCJ12A-13-F SMCJ_ser.pdf
SMCJ12A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SMBJ12A-13-F SMBJ_ser.pdf
SMBJ12A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1977 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
22+20.57 грн
32+13.40 грн
100+9.80 грн
125+9.55 грн
147+6.53 грн
402+6.20 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
SMCJ28A-13-F SMCJ_ser.pdf
SMCJ28A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5898 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+54.13 грн
11+38.87 грн
13+34.27 грн
72+13.32 грн
196+12.65 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
3.0SMCJ28A-13 3.0SMCJxx.pdf
3.0SMCJ28A-13
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
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DDA123JU-7-F DDA_XXXX_U.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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DDA123JH-7 ds30420.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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SMAJ54A-13-F SMAJ_ser.pdf
SMAJ54A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1873 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
27+17.14 грн
39+10.97 грн
100+5.38 грн
1000+4.18 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
SMAJ51A-13-F SMAJ_ser.pdf
SMAJ51A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
24+18.95 грн
29+14.74 грн
33+13.07 грн
100+7.88 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
SMAJ51CA-13-F SMAJ_ser.pdf
SMAJ51CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+36.99 грн
18+23.63 грн
23+18.77 грн
31+13.57 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
AZ23C5V6-7-F AZ23C_ser.pdf
AZ23C5V6-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
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BZT52C5V6S-7-F BZT52CxxS_ser.pdf
BZT52C5V6S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMHC10A07N8TC ZXMHC10A07N8.pdf
ZXMHC10A07N8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Power dissipation: 0.87W
Polarisation: unipolar
Features of semiconductor devices: MOSFET H-Bridge
Drain current: 0.9/-0.7A
Kind of channel: enhancement
Drain-source voltage: 100/-100V
Type of transistor: N/P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 0.9/1.45Ω
Mounting: SMD
на замовлення 2047 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+77.59 грн
10+60.24 грн
50+50.94 грн
100+46.83 грн
500+43.40 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMHC4035LSDQ-13 DMHC4035LSDQ.pdf
DMHC4035LSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMHC6A07N8TC ZXMHC6A07N8.pdf
ZXMHC6A07N8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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ZXMHC3F381N8TC ZXMHC3F381N8.pdf
ZXMHC3F381N8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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DSS3540M-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
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DSS3515M-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3515M-7B DSS3515M.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3540M-7B DSS3540M.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
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AH49EZ3-G1 AH49E.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷85°C
Type of sensor: Hall
Mounting: THT
Operating temperature: -40...85°C
на замовлення 51000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1000+19.40 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DMC3028LSD-13 DMC3028LSD-13.pdf
DMC3028LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMC1018UPD-13 DMC1018UPD.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
BZT52C12Q-7-F BZT52Cxx_ser.pdf
BZT52C12Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
на замовлення 2289 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.73 грн
74+5.70 грн
82+5.13 грн
90+4.66 грн
102+4.11 грн
328+2.90 грн
902+2.74 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
BZT52C12SQ-7-F Ds30093-R20.pdf
BZT52C12SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C12T-7 BZT52CxxT_ser.pdf
BZT52C12T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C12TQ-7-F ds30502.pdf
BZT52C12TQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C12Q-13-F ds18004.pdf
BZT52C12Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
MMBTA06Q-7-F MMBTA05_MMBTA06.pdf
MMBTA06Q-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Application: automotive industry
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AP2112M-3.3TRG1 AP2112.pdf
AP2112M-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
AP2112R5-3.3TRG1 AP2112.pdf
AP2112R5-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AP2112R5A-3.3TRG1 AP2112.pdf
AP2112R5A-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AP2112R5-1.2TRG1 AP2112.pdf
AP2112R5-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
ZVP3310FTA ZVP3310F.pdf
ZVP3310FTA
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Mounting: SMD
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Polarisation: unipolar
Drain current: -0.14A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 20Ω
на замовлення 273 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+58.64 грн
12+35.44 грн
25+29.15 грн
100+22.12 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
74AHC1G125W5-7 74AHC1G125.pdf
74AHC1G125W5-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
на замовлення 123 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.83 грн
55+7.71 грн
65+6.53 грн
79+5.33 грн
90+4.67 грн
100+4.21 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
74LVC1G125W5-7 74LVC1G125.pdf
74LVC1G125W5-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
товару немає в наявності
В кошику  од. на суму  грн.
74AHC1G125SE-7 74AHC1G125.pdf
74AHC1G125SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
на замовлення 5978 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+9.92 грн
62+6.79 грн
75+5.63 грн
100+4.37 грн
200+3.94 грн
250+3.82 грн
327+2.94 грн
898+2.78 грн
3000+2.77 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
74AHCT1G125SE-7 74AHCT1G125.pdf
74AHCT1G125SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+451.11 грн
В кошику  од. на суму  грн.
74AHCT1G125W5-7 74AHCT1G125.pdf
74AHCT1G125W5-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.73 грн
50+8.55 грн
57+7.37 грн
70+6.07 грн
79+5.33 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
74LVC1G125SE-7 74LVC1G125.pdf
74LVC1G125SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
товару немає в наявності
В кошику  од. на суму  грн.
74LVC1G125Z-7 74LVC1G125.pdf
74LVC1G125Z-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
товару немає в наявності
В кошику  од. на суму  грн.
74LVC1G125FW4-7 74LVC1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
товару немає в наявності
В кошику  од. на суму  грн.
74LVC1G125FZ4-7 74LVC1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
товару немає в наявності
В кошику  од. на суму  грн.
74AUP1G125FS3-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику  од. на суму  грн.
74AUP1G125FW5-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику  од. на суму  грн.
74AUP1G125FX4-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
74AUP1G125FZ4-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ28CA-13-F SMAJ_ser.pdf
SMAJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 843 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
17+27.97 грн
24+17.93 грн
27+15.58 грн
100+10.22 грн
500+7.88 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
SMAJ28A-13-F SMAJ_ser.pdf
SMAJ28A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 7390 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+16.24 грн
38+11.23 грн
43+9.80 грн
100+7.09 грн
218+4.37 грн
600+4.14 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMAJ28CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ28CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ28AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ28AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3.8mΩ
Mounting: SMD
Power dissipation: 3.9W
Polarisation: unipolar
на замовлення 557 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+147.96 грн
10+77.08 грн
15+64.51 грн
41+61.16 грн
100+59.48 грн
500+58.64 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMTH4004SCTB-13 DMTH4004SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH4004SCTBQ-13 DMTH4004SCTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH6004SCTB-13 DMTH6004SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 3.4mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.