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3.0SMCJ28A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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DDTA123JCA-7-F DDTA123JCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 669 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
50+8.63 грн
100+4.76 грн
500+3.14 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DDA123JU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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DDA123JH-7 DIODES INCORPORATED ds30420.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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SMAJ54A-13-F SMAJ54A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1873 шт:
термін постачання 14-30 дні (днів)
27+17.32 грн
39+11.09 грн
100+5.43 грн
1000+4.22 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
SMAJ51A-13-F SMAJ51A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
24+19.14 грн
29+14.90 грн
33+13.21 грн
100+7.96 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
SMAJ51CA-13-F SMAJ51CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
13+37.38 грн
18+23.87 грн
23+18.96 грн
31+13.71 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
AZ23C5V6-7-F AZ23C5V6-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
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BZT52C5V6S-7-F BZT52C5V6S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED ZXMHC10A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
на замовлення 2047 шт:
термін постачання 14-30 дні (днів)
6+78.40 грн
10+60.86 грн
50+51.47 грн
100+47.32 грн
500+44.61 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMHC4035LSDQ-13 DMHC4035LSDQ-13 DIODES INCORPORATED DMHC4035LSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMHC6A07N8TC ZXMHC6A07N8TC DIODES INCORPORATED ZXMHC6A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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ZXMHC3F381N8TC ZXMHC3F381N8TC DIODES INCORPORATED ZXMHC3F381N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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DSS3540M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
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DSS3515M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3515M-7B DIODES INCORPORATED DSS3515M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3540M-7B DIODES INCORPORATED DSS3540M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
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AH49EZ3-G1 DIODES INCORPORATED AH49E.pdf Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷85°C
Type of sensor: Hall
Operating temperature: -40...85°C
Mounting: THT
на замовлення 51000 шт:
термін постачання 14-30 дні (днів)
1000+19.60 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED DMC3028LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
9+53.79 грн
13+32.68 грн
100+20.65 грн
500+15.58 грн
1000+14.81 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMC1018UPDWQ-13 DIODES INCORPORATED DMC1018UPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMC1018UPD-13 DIODES INCORPORATED DMC1018UPD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
BZT52C12Q-7-F BZT52C12Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
на замовлення 2320 шт:
термін постачання 14-30 дні (днів)
42+10.94 грн
84+5.08 грн
92+4.64 грн
101+4.22 грн
114+3.72 грн
500+2.98 грн
1000+2.87 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
BZT52C12SQ-7-F BZT52C12SQ-7-F DIODES INCORPORATED Ds30093-R20.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C12T-7 BZT52C12T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C12TQ-7-F BZT52C12TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C12Q-13-F BZT52C12Q-13-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
MMBTA06Q-7-F MMBTA06Q-7-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
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AP2112M-3.3TRG1 AP2112M-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
AP2112R5-3.3TRG1 AP2112R5-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AP2112R5A-3.3TRG1 AP2112R5A-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AP2112R5-1.2TRG1 AP2112R5-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
ZVP3310FTA ZVP3310FTA DIODES INCORPORATED ZVP3310F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140mA
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 273 шт:
термін постачання 14-30 дні (днів)
8+59.26 грн
12+35.81 грн
25+29.46 грн
100+22.35 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
74AHC1G125W5-7 74AHC1G125W5-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
на замовлення 385 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
66+6.43 грн
76+5.59 грн
90+4.74 грн
110+3.85 грн
250+3.49 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
74LVC1G125W5-7 74LVC1G125W5-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT25
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
на замовлення 2123 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
66+6.43 грн
76+5.59 грн
90+4.74 грн
110+3.85 грн
250+3.81 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
74AHC1G125SE-7 74AHC1G125SE-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
3+152.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
74AHCT1G125SE-7 74AHCT1G125SE-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
7+64.73 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
74AHCT1G125W5-7 74AHCT1G125W5-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 606 шт:
термін постачання 14-30 дні (днів)
42+10.94 грн
53+8.13 грн
60+7.11 грн
72+5.93 грн
81+5.23 грн
100+4.68 грн
250+4.15 грн
500+3.87 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
74LVC1G125SE-7 74LVC1G125SE-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT353
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
72+6.38 грн
85+5.08 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
74LVC1G125Z-7 74LVC1G125Z-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
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74LVC1G125FW4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC1G125FZ4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74AUP1G125FS3-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FW5-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FX4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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 Мінімальне замовлення: 5 шт
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74AUP1G125FZ4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
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SMAJ28CA-13-F SMAJ28CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 843 шт:
термін постачання 14-30 дні (днів)
17+28.26 грн
24+18.12 грн
27+15.75 грн
100+10.33 грн
500+7.96 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
SMAJ28A-13-F SMAJ28A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 10026 шт:
термін постачання 14-30 дні (днів)
30+15.50 грн
41+10.50 грн
47+9.14 грн
100+6.62 грн
500+5.90 грн
1000+5.18 грн
2500+4.46 грн
5000+4.11 грн
10000+4.02 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMAJ28CAQ-13-F SMAJ28CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ28AQ-13-F SMAJ28AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED DMTH6004SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
4+143.13 грн
10+74.49 грн
25+66.87 грн
50+60.95 грн
100+59.26 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMTH4004SCTB-13 DIODES INCORPORATED DMTH4004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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DMTH4004SCTBQ-13 DIODES INCORPORATED DMTH4004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH6004SCTB-13 DIODES INCORPORATED DMTH6004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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DMTH6004SCTBQ-13 DIODES INCORPORATED DMTH6004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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AP62250WU-7 AP62250WU-7 DIODES INCORPORATED AP62250.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: TSOT26
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
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P6SMAJ28ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT6013LSS-13 DMT6013LSS-13 DIODES INCORPORATED DMT6013LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 15nC
Polarisation: unipolar
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SMBJ28A-13-F SMBJ28A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28AQ-13-F SMBJ28AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BZT52C15SQ-7-F BZT52C15SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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3.0SMCJ28A-13 3.0SMCJxx.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 669 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.76 грн
50+8.63 грн
100+4.76 грн
500+3.14 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DDA123JU-7-F DDA_XXXX_U.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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DDA123JH-7 ds30420.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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SMAJ54A-13-F SMAJ_ser.pdf
SMAJ54A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1873 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
27+17.32 грн
39+11.09 грн
100+5.43 грн
1000+4.22 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
SMAJ51A-13-F SMAJ_ser.pdf
SMAJ51A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
24+19.14 грн
29+14.90 грн
33+13.21 грн
100+7.96 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
SMAJ51CA-13-F SMAJ_ser.pdf
SMAJ51CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+37.38 грн
18+23.87 грн
23+18.96 грн
31+13.71 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
AZ23C5V6-7-F AZ23C_ser.pdf
AZ23C5V6-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
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В кошику  од. на суму  грн.
BZT52C5V6S-7-F BZT52CxxS_ser.pdf
BZT52C5V6S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ZXMHC10A07N8TC ZXMHC10A07N8.pdf
ZXMHC10A07N8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
на замовлення 2047 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+78.40 грн
10+60.86 грн
50+51.47 грн
100+47.32 грн
500+44.61 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMHC4035LSDQ-13 DMHC4035LSDQ.pdf
DMHC4035LSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
ZXMHC6A07N8TC ZXMHC6A07N8.pdf
ZXMHC6A07N8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
товару немає в наявності
В кошику  од. на суму  грн.
ZXMHC3F381N8TC ZXMHC3F381N8.pdf
ZXMHC3F381N8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
товару немає в наявності
В кошику  од. на суму  грн.
DSS3540M-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS3515M-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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В кошику  од. на суму  грн.
DSS3515M-7B DSS3515M.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS3540M-7B DSS3540M.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
AH49EZ3-G1 AH49E.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷85°C
Type of sensor: Hall
Operating temperature: -40...85°C
Mounting: THT
на замовлення 51000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1000+19.60 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DMC3028LSD-13 DMC3028LSD-13.pdf
DMC3028LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+53.79 грн
13+32.68 грн
100+20.65 грн
500+15.58 грн
1000+14.81 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMC1018UPD-13 DMC1018UPD.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
BZT52C12Q-7-F BZT52Cxx_ser.pdf
BZT52C12Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
на замовлення 2320 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.94 грн
84+5.08 грн
92+4.64 грн
101+4.22 грн
114+3.72 грн
500+2.98 грн
1000+2.87 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
BZT52C12SQ-7-F Ds30093-R20.pdf
BZT52C12SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BZT52C12T-7 BZT52CxxT_ser.pdf
BZT52C12T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BZT52C12TQ-7-F ds30502.pdf
BZT52C12TQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BZT52C12Q-13-F ds18004.pdf
BZT52C12Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
MMBTA06Q-7-F MMBTA05_MMBTA06.pdf
MMBTA06Q-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
товару немає в наявності
В кошику  од. на суму  грн.
AP2112M-3.3TRG1 AP2112.pdf
AP2112M-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
AP2112R5-3.3TRG1 AP2112.pdf
AP2112R5-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AP2112R5A-3.3TRG1 AP2112.pdf
AP2112R5A-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AP2112R5-1.2TRG1 AP2112.pdf
AP2112R5-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
ZVP3310FTA ZVP3310F.pdf
ZVP3310FTA
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140mA
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 273 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+59.26 грн
12+35.81 грн
25+29.46 грн
100+22.35 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
74AHC1G125W5-7 74AHC1G125.pdf
74AHC1G125W5-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
на замовлення 385 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+9.12 грн
66+6.43 грн
76+5.59 грн
90+4.74 грн
110+3.85 грн
250+3.49 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
74LVC1G125W5-7 74LVC1G125.pdf
74LVC1G125W5-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT25
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
на замовлення 2123 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+9.12 грн
66+6.43 грн
76+5.59 грн
90+4.74 грн
110+3.85 грн
250+3.81 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
74AHC1G125SE-7 74AHC1G125.pdf
74AHC1G125SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+152.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
74AHCT1G125SE-7 74AHCT1G125.pdf
74AHCT1G125SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+64.73 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
74AHCT1G125W5-7 74AHCT1G125.pdf
74AHCT1G125W5-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Manufacturer series: AHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
на замовлення 606 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.94 грн
53+8.13 грн
60+7.11 грн
72+5.93 грн
81+5.23 грн
100+4.68 грн
250+4.15 грн
500+3.87 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
74LVC1G125SE-7 74LVC1G125.pdf
74LVC1G125SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT353
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
72+6.38 грн
85+5.08 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
74LVC1G125Z-7 74LVC1G125.pdf
74LVC1G125Z-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
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74LVC1G125FW4-7 74LVC1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC1G125FZ4-7 74LVC1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74AUP1G125FS3-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FW5-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FX4-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
74AUP1G125FZ4-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
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SMAJ28CA-13-F SMAJ_ser.pdf
SMAJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 843 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
17+28.26 грн
24+18.12 грн
27+15.75 грн
100+10.33 грн
500+7.96 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
SMAJ28A-13-F SMAJ_ser.pdf
SMAJ28A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 10026 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.50 грн
41+10.50 грн
47+9.14 грн
100+6.62 грн
500+5.90 грн
1000+5.18 грн
2500+4.46 грн
5000+4.11 грн
10000+4.02 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMAJ28CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ28CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ28AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ28AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+143.13 грн
10+74.49 грн
25+66.87 грн
50+60.95 грн
100+59.26 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMTH4004SCTB-13 DMTH4004SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH4004SCTBQ-13 DMTH4004SCTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH6004SCTB-13 DMTH6004SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH6004SCTBQ-13 DMTH6004SCTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
AP62250WU-7 AP62250.pdf
AP62250WU-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: TSOT26
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
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P6SMAJ28ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT6013LSS-13 DMT6013LSS.pdf
DMT6013LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 15nC
Polarisation: unipolar
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SMBJ28A-13-F ds19002.pdf
SMBJ28A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28AQ-13-F ds40740.pdf
SMBJ28AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BZT52C15SQ-7-F BZT52CxxS_ser.pdf
BZT52C15SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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