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BCV47QTC DIODES INCORPORATED BCV47Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
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BCV47QTA BCV47QTA DIODES INCORPORATED BCV47Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Application: automotive industry
Quantity in set/package: 3000pcs.
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BCV47TC DIODES INCORPORATED bcv27%2C47.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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SMAJ26A-13-F SMAJ26A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4238 шт:
термін постачання 14-30 дні (днів)
25+17.95 грн
31+13.67 грн
37+11.33 грн
100+4.21 грн
Мінімальне замовлення: 25
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SMAJ26AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMAJ26ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN2230U-7 DMN2230U-7 DIODES INCORPORATED DMN2230U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 745 шт:
термін постачання 14-30 дні (днів)
35+12.92 грн
45+9.67 грн
100+8.58 грн
500+8.00 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
DMN2230UQ-7 DMN2230UQ-7 DIODES INCORPORATED DMN2230UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
13+35.90 грн
18+24.25 грн
50+16.83 грн
100+14.42 грн
Мінімальне замовлення: 13
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DMN2310UT-13 DIODES INCORPORATED DMN2310UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 490mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 490mW
Case: SOT523
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 0.7nC
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DMN2230UQ-13 DMN2230UQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 7A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN2300U-7 DMN2300U-7 DIODES INCORPORATED DMN2300U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2310UWQ-7 DMN2310UWQ-7 DIODES INCORPORATED DMN2310UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN2310U-7 DMN2310U-7 DIODES INCORPORATED DMN2310U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2310UW-7 DMN2310UW-7 DIODES INCORPORATED DMN2310UW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ16CA-13-F SMBJ16CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1209 шт:
термін постачання 14-30 дні (днів)
25+17.95 грн
31+13.50 грн
35+12.00 грн
100+8.17 грн
500+6.42 грн
1000+6.08 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMCJ16CA-13-F SMCJ16CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP5724FDCG-7 DIODES INCORPORATED AP5724.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; U-DFN2020-6; SMD
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Topology: boost
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Case: U-DFN2020-6
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Kind of package: reel; tape
Output current: 40mA
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AP3401KTTR-G1 AP3401KTTR-G1 DIODES INCORPORATED AP3401x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT26
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
15+27.50 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
DMN3401LDW-7 DMN3401LDW-7 DIODES INCORPORATED DMN3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2999 шт:
термін постачання 14-30 дні (днів)
20+22.43 грн
32+13.17 грн
100+7.97 грн
500+5.83 грн
1000+5.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMG3406L-7 DMG3406L-7 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
на замовлення 1782 шт:
термін постачання 14-30 дні (днів)
20+23.33 грн
28+15.33 грн
50+10.52 грн
100+8.89 грн
500+6.19 грн
1000+5.39 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMG3404L-7 DMG3404L-7 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
16+29.61 грн
22+19.67 грн
27+16.00 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DMG3406L-13 DMG3406L-13 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
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DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
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DMG3401LSN-7 DIODES INCORPORATED DMG3401LSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
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DMG3402LQ-13 DMG3402LQ-13 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
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DMG3404L-13 DMG3404L-13 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 13.2nC
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
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DMG3407SSN-7 DIODES INCORPORATED DMG3407SSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -3.6A
Gate charge: 16nC
On-state resistance: 72mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
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74AUP2G3404FW3-7 DIODES INCORPORATED 74AUP2G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 2; CMOS; SMD; X2-DFN0910-6; AUP
Kind of package: reel; tape
Family: AUP
Kind of integrated circuit: buffer; inverter
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of output: push-pull
Case: X2-DFN0910-6
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
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BZT52C24-13-F BZT52C24-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 587 шт:
термін постачання 14-30 дні (днів)
125+3.59 грн
157+2.67 грн
186+2.25 грн
272+1.53 грн
500+1.22 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
BZT52C24S-7-F BZT52C24S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
50+8.97 грн
71+5.92 грн
120+3.49 грн
500+2.33 грн
1000+2.02 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52C24-7-F BZT52C24-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
63+7.18 грн
79+5.33 грн
88+4.75 грн
145+2.89 грн
500+2.08 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BZT52C24SQ-7-F DIODES INCORPORATED Ds30093-R20.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C24Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C24LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 24V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C24T-7 DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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74LVC2G04DW-7 74LVC2G04DW-7 DIODES INCORPORATED 74LVC2G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC2G04FW4-7 DIODES INCORPORATED 74LVC2G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G04FX4-7 DIODES INCORPORATED 74LVC2G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G04FZ4-7 DIODES INCORPORATED 74LVC2G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G04W6-7 74LVC2G04W6-7 DIODES INCORPORATED 74LVC2G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: SOT26
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC1G14SE-7
+1
 		74LVC1G14SE-7 DIODES INCORPORATED 74LVC1G14.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C; LVC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
на замовлення 503 шт:
термін постачання 14-30 дні (днів)
72+6.28 грн
84+5.00 грн
95+4.42 грн
113+3.70 грн
145+2.89 грн
250+2.55 грн
500+2.37 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
74LVC1G14W5-7 74LVC1G14W5-7 DIODES INCORPORATED 74LVC1G14.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT25; 1.65÷5.5VDC; -40÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
на замовлення 2692 шт:
термін постачання 14-30 дні (днів)
34+13.46 грн
58+7.25 грн
78+5.37 грн
117+3.59 грн
250+3.15 грн
500+3.04 грн
1000+2.88 грн
Мінімальне замовлення: 34
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74LVC1G14QSE-7 DIODES INCORPORATED 74LVC1G14Q.pdf Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of output: push-pull
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74LVC1G14FW4-7 DIODES INCORPORATED 74LVC1G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of integrated circuit: inverter
Kind of output: push-pull
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74LVC1G14FZ4-7 DIODES INCORPORATED 74LVC1G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of integrated circuit: inverter
Kind of output: push-pull
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74LVC1G14QW5-7 DIODES INCORPORATED 74LVC1G14Q.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Kind of output: push-pull
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BCM847BS-7 BCM847BS-7 DIODES INCORPORATED BCM847BS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 0.2W
Current gain: 200...450
Quantity in set/package: 3000pcs.
на замовлення 3404 шт:
термін постачання 14-30 дні (днів)
28+16.15 грн
77+5.42 грн
92+4.55 грн
100+4.19 грн
500+3.41 грн
1000+3.11 грн
3000+2.74 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
ES2C-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 25ns; SMB; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.92V
Kind of package: reel; tape
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ES2CA-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 25ns; SMA; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.92V
Kind of package: reel; tape
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74AUP2G14DW-7 74AUP2G14DW-7 DIODES INCORPORATED 74AUP2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: SOT363
Number of channels: 2
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74AUP2G14FW3-7 DIODES INCORPORATED 74AUP2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN0910-6
Number of channels: 2
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74AUP2G14FW4-7 DIODES INCORPORATED 74AUP2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1010-6
Number of channels: 2
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74AUP2G14FZ4-7 DIODES INCORPORATED 74AUP2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Number of channels: 2
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DGD2104MS8-13 DGD2104MS8-13 DIODES INCORPORATED DGD2104M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Topology: IGBT half-bridge
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
на замовлення 2394 шт:
термін постачання 14-30 дні (днів)
4+126.53 грн
10+65.83 грн
50+55.83 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AP3441SHE-7B DIODES INCORPORATED AP3441-L.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
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DDTC143EUA-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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ADTC143ECAQ-13 DIODES INCORPORATED ADTC143ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
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ADTC143ECAQ-7 DIODES INCORPORATED ADTC143ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC143EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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BCV47QTC BCV47Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
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BCV47QTA BCV47Q.pdf
BCV47QTA
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Application: automotive industry
Quantity in set/package: 3000pcs.
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BCV47TC bcv27%2C47.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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SMAJ26A-13-F SMAJ_ser.pdf
SMAJ26A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4238 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.95 грн
31+13.67 грн
37+11.33 грн
100+4.21 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ26AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMAJ26ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN2230U-7 DMN2230U.pdf
DMN2230U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 745 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
35+12.92 грн
45+9.67 грн
100+8.58 грн
500+8.00 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
DMN2230UQ-7 DMN2230UQ.pdf
DMN2230UQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.90 грн
18+24.25 грн
50+16.83 грн
100+14.42 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMN2310UT-13 DMN2310UT.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 490mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 490mW
Case: SOT523
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 0.7nC
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DMN2230UQ-13
DMN2230UQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 7A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN2300U-7 DMN2300U.pdf
DMN2300U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2310UWQ-7 DMN2310UWQ.pdf
DMN2310UWQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN2310U-7 DMN2310U.pdf
DMN2310U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2310UW-7 DMN2310UW.pdf
DMN2310UW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ16CA-13-F SMBJ_ser.pdf
SMBJ16CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1209 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.95 грн
31+13.50 грн
35+12.00 грн
100+8.17 грн
500+6.42 грн
1000+6.08 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMCJ16CA-13-F SMCJ_ser.pdf
SMCJ16CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP5724FDCG-7 AP5724.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; U-DFN2020-6; SMD
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Topology: boost
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Case: U-DFN2020-6
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Kind of package: reel; tape
Output current: 40mA
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AP3401KTTR-G1 AP3401x-DTE.pdf
AP3401KTTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT26
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+27.50 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
DMN3401LDW-7 DMN3401LDW.pdf
DMN3401LDW-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2999 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.43 грн
32+13.17 грн
100+7.97 грн
500+5.83 грн
1000+5.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMG3406L-7 DMG3406L.pdf
DMG3406L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
на замовлення 1782 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.33 грн
28+15.33 грн
50+10.52 грн
100+8.89 грн
500+6.19 грн
1000+5.39 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.61 грн
22+19.67 грн
27+16.00 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DMG3406L-13 DMG3406L.pdf
DMG3406L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
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DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
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DMG3401LSNQ-7 DMG3401LSNQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
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DMG3401LSN-7 DMG3401LSN.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
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DMG3402LQ-13 DMG3402LQ.pdf
DMG3402LQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
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DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 13.2nC
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
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DMG3407SSN-7 DMG3407SSN.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC59
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -3.6A
Gate charge: 16nC
On-state resistance: 72mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
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74AUP2G3404FW3-7 74AUP2G34.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 2; CMOS; SMD; X2-DFN0910-6; AUP
Kind of package: reel; tape
Family: AUP
Kind of integrated circuit: buffer; inverter
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of output: push-pull
Case: X2-DFN0910-6
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
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BZT52C24-13-F BZT52Cxx_ser.pdf
BZT52C24-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 587 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
125+3.59 грн
157+2.67 грн
186+2.25 грн
272+1.53 грн
500+1.22 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
BZT52C24S-7-F BZT52CxxS_ser.pdf
BZT52C24S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+8.97 грн
71+5.92 грн
120+3.49 грн
500+2.33 грн
1000+2.02 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52C24-7-F BZT52Cxx_ser.pdf
BZT52C24-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.18 грн
79+5.33 грн
88+4.75 грн
145+2.89 грн
500+2.08 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BZT52C24SQ-7-F Ds30093-R20.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C24Q-7-F ds18004.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C24LP-7 BZT52CxxLP_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 24V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C24T-7 ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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74LVC2G04DW-7 74LVC2G04.pdf
74LVC2G04DW-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC2G04FW4-7 74LVC2G04.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G04FX4-7 74LVC2G04.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G04FZ4-7 74LVC2G04.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G04W6-7 74LVC2G04.pdf
74LVC2G04W6-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Case: SOT26
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC1G14SE-7 74LVC1G14.pdf
74LVC1G14SE-7
+1
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C; LVC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
на замовлення 503 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.28 грн
84+5.00 грн
95+4.42 грн
113+3.70 грн
145+2.89 грн
250+2.55 грн
500+2.37 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
74LVC1G14W5-7 74LVC1G14.pdf
74LVC1G14W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT25; 1.65÷5.5VDC; -40÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
на замовлення 2692 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.46 грн
58+7.25 грн
78+5.37 грн
117+3.59 грн
250+3.15 грн
500+3.04 грн
1000+2.88 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
74LVC1G14QSE-7 74LVC1G14Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of output: push-pull
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74LVC1G14FW4-7 74LVC1G14.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of integrated circuit: inverter
Kind of output: push-pull
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74LVC1G14FZ4-7 74LVC1G14.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of integrated circuit: inverter
Kind of output: push-pull
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74LVC1G14QW5-7 74LVC1G14Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Kind of output: push-pull
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BCM847BS-7 BCM847BS.pdf
BCM847BS-7
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 0.2W
Current gain: 200...450
Quantity in set/package: 3000pcs.
на замовлення 3404 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.15 грн
77+5.42 грн
92+4.55 грн
100+4.19 грн
500+3.41 грн
1000+3.11 грн
3000+2.74 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
ES2C-13-F ds14002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 25ns; SMB; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.92V
Kind of package: reel; tape
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В кошику  од. на суму  грн.
ES2CA-13-F ds14002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 25ns; SMA; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.92V
Kind of package: reel; tape
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74AUP2G14DW-7 74AUP2G14.pdf
74AUP2G14DW-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: SOT363
Number of channels: 2
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74AUP2G14FW3-7 74AUP2G14.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN0910-6
Number of channels: 2
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74AUP2G14FW4-7 74AUP2G14.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1010-6
Number of channels: 2
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74AUP2G14FZ4-7 74AUP2G14.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Number of channels: 2
товару немає в наявності
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DGD2104MS8-13 DGD2104M.pdf
DGD2104MS8-13
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Topology: IGBT half-bridge
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
на замовлення 2394 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+126.53 грн
10+65.83 грн
50+55.83 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AP3441SHE-7B AP3441-L.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
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DDTC143EUA-7-F ds30321.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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ADTC143ECAQ-13 ADTC143ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
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ADTC143ECAQ-7 ADTC143ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC143EE-7-F ds30313.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
товару немає в наявності
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