Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74546) > Сторінка 1187 з 1243
Фото | Назва | Виробник | Інформація |
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ZXM61N02FTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2226 шт: термін постачання 21-30 дні (днів) |
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AP62250WU-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26 Output current: 2.5A Operating temperature: -40...85°C Kind of integrated circuit: DC/DC converter Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape Output voltage: 0.8...7V DC Input voltage: 4.2...18V DC Frequency: 1.3MHz Case: TSOT26 Topology: buck |
на замовлення 2462 шт: термін постачання 21-30 дні (днів) |
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AP2151AW-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT25 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC On-state resistance: 95mΩ Active logical level: high |
на замовлення 8272 шт: термін постачання 21-30 дні (днів) |
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B530C-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Capacitance: 300pF Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2248 шт: термін постачання 21-30 дні (днів) |
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B540CQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 100A Semiconductor structure: single diode Case: SMC Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Capacitance: 300pF Application: automotive industry Reverse recovery time: 16ns Max. forward voltage: 0.55V Load current: 5A |
на замовлення 1930 шт: термін постачання 21-30 дні (днів) |
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AP2171WG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT25 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC On-state resistance: 95mΩ Active logical level: high |
на замовлення 7226 шт: термін постачання 21-30 дні (днів) |
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74AHCT125S14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AHCT; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Operating temperature: -40...125°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: AHCT |
на замовлення 334 шт: термін постачання 21-30 дні (днів) |
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74AHCT125T14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; AHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: AHCT |
на замовлення 2754 шт: термін постачання 21-30 дні (днів) |
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BZX84C9V1-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 9.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 5880 шт: термін постачання 21-30 дні (днів) |
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PAM2841SR | DIODES INCORPORATED |
![]() Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: MSOP8 Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.8...5.5V DC Output current: 10...40mA |
на замовлення 1663 шт: термін постачання 21-30 дні (днів) |
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PAM2804AAB010 | DIODES INCORPORATED |
![]() Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: TSOT25 Mounting: SMD Topology: buck Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...6V DC Integrated circuit features: PWM Output current: 1A |
на замовлення 1216 шт: термін постачання 21-30 дні (днів) |
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1N4148WT-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SOD523 Max. forward voltage: 1V Reverse recovery time: 4ns |
на замовлення 13822 шт: термін постачання 21-30 дні (днів) |
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1N4148WTQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. load current: 0.25A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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SMAJ30CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4567 шт: термін постачання 21-30 дні (днів) |
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SMAJ30CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMDT5551-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363 Polarisation: bipolar Case: SOT363 Mounting: SMD Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.2A Power dissipation: 0.2W Quantity in set/package: 3000pcs. Current gain: 80...250 Collector-emitter voltage: 160V Frequency: 300MHz |
на замовлення 2239 шт: термін постачання 21-30 дні (днів) |
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DMMT5551-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Mounting: SMD Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.2A Power dissipation: 0.3W Collector-emitter voltage: 160V Current gain: 50...250 Quantity in set/package: 3000pcs. Frequency: 100...300MHz Case: SOT26 Polarisation: bipolar |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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MMST5551-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323 Polarisation: bipolar Case: SOT323 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 0.2A Power dissipation: 0.2W Quantity in set/package: 3000pcs. Current gain: 80...250 Collector-emitter voltage: 160V Frequency: 300MHz |
на замовлення 1312 шт: термін постачання 21-30 дні (днів) |
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BAS70-05Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Application: automotive industry Capacitance: 2pF Reverse recovery time: 5ns Leakage current: 0.1µA Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS70-05Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Application: automotive industry Capacitance: 2pF Reverse recovery time: 5ns Leakage current: 0.1µA Power dissipation: 0.2W |
на замовлення 2940 шт: термін постачання 21-30 дні (днів) |
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BAS70-05T-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT523 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Capacitance: 2pF Reverse recovery time: 5ns Leakage current: 0.1µA Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMG3402L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Power dissipation: 1.4W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape |
на замовлення 476 шт: термін постачання 21-30 дні (днів) |
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DMG3406L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Power dissipation: 1.4W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
на замовлення 4376 шт: термін постачання 21-30 дні (днів) |
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SMAJ26A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 3185 шт: термін постачання 21-30 дні (днів) |
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ZXTR2005Z-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 38mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Input voltage: 10...100V |
на замовлення 4528 шт: термін постачання 21-30 дні (днів) |
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BSS84Q-13-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS84Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1226 шт: термін постачання 21-30 дні (днів) |
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BSS84W-7-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 4125 шт: термін постачання 21-30 дні (днів) |
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BZT52C9V1-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 9.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1268 шт: термін постачання 21-30 дні (днів) |
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BC858A-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC858AW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAW56T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 75mA Reverse recovery time: 4ns Semiconductor structure: common anode; double Capacitance: 1.5pF Case: SOT523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 684 шт: термін постачання 21-30 дні (днів) |
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BAW56W-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT323 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A Features of semiconductor devices: small signal |
на замовлення 2798 шт: термін постачання 21-30 дні (днів) |
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FMMT593TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 50MHz Power dissipation: 0.5W |
на замовлення 1823 шт: термін постачання 21-30 дні (днів) |
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FMMT597TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23 Collector current: 0.2A Power dissipation: 0.5W Collector-emitter voltage: 300V Quantity in set/package: 3000pcs. Frequency: 75MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 1008 шт: термін постачання 21-30 дні (днів) |
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FMMT620TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23 Collector current: 1.5A Power dissipation: 0.625W Current gain: 10...900 Collector-emitter voltage: 80V Quantity in set/package: 3000pcs. Frequency: 160MHz Polarisation: bipolar Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 624 шт: термін постачання 21-30 дні (днів) |
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FMMT634TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.9A Power dissipation: 0.625W Case: SOT23 Current gain: 0.6k...60k Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 140MHz |
на замовлення 3051 шт: термін постачання 21-30 дні (днів) |
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FMMT722TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23 Collector current: 1.5A Power dissipation: 0.625W Current gain: 300...470 Collector-emitter voltage: 70V Quantity in set/package: 3000pcs. Frequency: 200MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 2991 шт: термін постачання 21-30 дні (днів) |
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BAS16LP-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DFN2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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BAS16Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
на замовлення 5550 шт: термін постачання 21-30 дні (днів) |
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AL5801W6-7 | DIODES INCORPORATED |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM Case: SOT26 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Output current: 0.35A Number of channels: 1 Operating voltage: 5...100V DC Kind of integrated circuit: current regulator; LED driver Type of integrated circuit: driver Integrated circuit features: PWM |
на замовлення 772 шт: термін постачання 21-30 дні (днів) |
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BC846BW-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC846BW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
на замовлення 2498 шт: термін постачання 21-30 дні (днів) |
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LM2903QS-13 | DIODES INCORPORATED |
![]() Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA Kind of comparator: universal Case: SO8 Kind of output: open collector Type of integrated circuit: comparator Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 200nA Input offset voltage: 15mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 |
на замовлення 2302 шт: термін постачання 21-30 дні (днів) |
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BAV199WQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.16A Reverse recovery time: 3µs Semiconductor structure: double series Capacitance: 2pF Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal Max. load current: 0.5A |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
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BAT54AW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS21Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape Application: automotive industry Max. load current: 0.4A |
на замовлення 3098 шт: термін постачання 21-30 дні (днів) |
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DMT6009LCT | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3 Case: TO220-3 Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 14.5mΩ Power dissipation: 2.2W Drain current: 29.8A Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6009LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 11.7mΩ Power dissipation: 2.08W Drain current: 9A Gate-source voltage: ±16V Pulsed drain current: 90A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6009LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12.8mΩ Power dissipation: 2.6W Drain current: 10.6A Gate-source voltage: ±16V Pulsed drain current: 90A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6009LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 2.3W Drain current: 9.1A Gate-source voltage: ±16V Pulsed drain current: 160A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMT6009LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 1.6W Drain current: 11.5A Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
DMT6010LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 25A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6010LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6010LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 12mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 125A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMT6011LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22.2nC On-state resistance: 14.5mΩ Power dissipation: 2.1W Drain current: 8.5A Gate-source voltage: ±20V Pulsed drain current: 85A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMT6012LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22.2nC On-state resistance: 14mΩ Power dissipation: 1.84W Drain current: 8.4A Gate-source voltage: ±20V Pulsed drain current: 65A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
DMT6015LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 18.9nC On-state resistance: 22mΩ Power dissipation: 2.2W Drain current: 7.6A Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC847CQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC847CT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 533 шт: термін постачання 21-30 дні (днів) |
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ZXM61N02FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2226 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
17+ | 24.54 грн |
100+ | 15.36 грн |
110+ | 8.47 грн |
301+ | 8.00 грн |
AP62250WU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Output current: 2.5A
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Frequency: 1.3MHz
Case: TSOT26
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Output current: 2.5A
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Frequency: 1.3MHz
Case: TSOT26
Topology: buck
на замовлення 2462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.96 грн |
16+ | 25.97 грн |
18+ | 23.12 грн |
25+ | 19.87 грн |
75+ | 12.51 грн |
205+ | 11.80 грн |
AP2151AW-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: high
на замовлення 8272 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
21+ | 19.63 грн |
23+ | 17.50 грн |
27+ | 15.04 грн |
78+ | 11.95 грн |
214+ | 11.32 грн |
250+ | 11.16 грн |
500+ | 10.93 грн |
B530C-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2248 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
16+ | 25.49 грн |
67+ | 14.01 грн |
183+ | 13.30 грн |
B540CQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 300pF
Application: automotive industry
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 300pF
Application: automotive industry
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Load current: 5A
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 41.78 грн |
13+ | 30.88 грн |
15+ | 27.95 грн |
64+ | 14.65 грн |
176+ | 13.86 грн |
1000+ | 13.46 грн |
AP2171WG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: high
на замовлення 7226 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
24+ | 16.94 грн |
27+ | 15.12 грн |
31+ | 12.90 грн |
95+ | 9.82 грн |
250+ | 9.74 грн |
261+ | 9.26 грн |
3000+ | 8.95 грн |
74AHCT125S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AHCT; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AHCT; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
на замовлення 334 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
29+ | 14.09 грн |
32+ | 12.43 грн |
100+ | 10.69 грн |
140+ | 6.65 грн |
74AHCT125T14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
на замовлення 2754 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
27+ | 14.81 грн |
31+ | 13.14 грн |
100+ | 11.32 грн |
128+ | 7.28 грн |
351+ | 6.89 грн |
BZX84C9V1-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 8.01 грн |
112+ | 3.56 грн |
134+ | 2.97 грн |
191+ | 2.08 грн |
500+ | 1.54 грн |
721+ | 1.29 грн |
1979+ | 1.22 грн |
3000+ | 1.19 грн |
PAM2841SR |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.8...5.5V DC
Output current: 10...40mA
на замовлення 1663 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.71 грн |
12+ | 35.23 грн |
25+ | 31.51 грн |
38+ | 24.46 грн |
105+ | 23.12 грн |
PAM2804AAB010 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT25
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
Integrated circuit features: PWM
Output current: 1A
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT25
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
Integrated circuit features: PWM
Output current: 1A
на замовлення 1216 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.96 грн |
18+ | 22.72 грн |
25+ | 20.27 грн |
54+ | 17.42 грн |
147+ | 16.47 грн |
250+ | 16.39 грн |
500+ | 16.07 грн |
1N4148WT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOD523
Max. forward voltage: 1V
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOD523
Max. forward voltage: 1V
Reverse recovery time: 4ns
на замовлення 13822 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.29 грн |
84+ | 4.75 грн |
117+ | 3.40 грн |
500+ | 2.63 грн |
584+ | 1.60 грн |
1605+ | 1.51 грн |
1N4148WTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 16.63 грн |
SMAJ30CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4567 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
27+ | 14.73 грн |
32+ | 12.67 грн |
50+ | 8.23 грн |
100+ | 7.05 грн |
200+ | 4.67 грн |
549+ | 4.43 грн |
SMAJ30CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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В кошику
од. на суму грн.
MMDT5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Polarisation: bipolar
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80...250
Collector-emitter voltage: 160V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Polarisation: bipolar
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80...250
Collector-emitter voltage: 160V
Frequency: 300MHz
на замовлення 2239 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
26+ | 15.36 грн |
50+ | 10.26 грн |
100+ | 8.61 грн |
260+ | 3.59 грн |
715+ | 3.40 грн |
DMMT5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.3W
Collector-emitter voltage: 160V
Current gain: 50...250
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Case: SOT26
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.3W
Collector-emitter voltage: 160V
Current gain: 50...250
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Case: SOT26
Polarisation: bipolar
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 213.15 грн |
MMST5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323
Polarisation: bipolar
Case: SOT323
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80...250
Collector-emitter voltage: 160V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323
Polarisation: bipolar
Case: SOT323
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80...250
Collector-emitter voltage: 160V
Frequency: 300MHz
на замовлення 1312 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
34+ | 11.72 грн |
100+ | 7.05 грн |
351+ | 2.66 грн |
966+ | 2.52 грн |
BAS70-05Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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В кошику
од. на суму грн.
BAS70-05Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
30+ | 13.46 грн |
50+ | 8.57 грн |
100+ | 7.05 грн |
296+ | 3.15 грн |
814+ | 2.98 грн |
BAS70-05T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
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В кошику
од. на суму грн.
DMG3402L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
на замовлення 476 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
22+ | 18.13 грн |
50+ | 12.59 грн |
100+ | 10.61 грн |
155+ | 6.02 грн |
425+ | 5.70 грн |
DMG3406L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 4376 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
27+ | 15.12 грн |
50+ | 9.77 грн |
100+ | 8.14 грн |
219+ | 4.24 грн |
602+ | 4.01 грн |
SMAJ26A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3185 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
27+ | 14.73 грн |
32+ | 12.51 грн |
100+ | 5.84 грн |
225+ | 4.13 грн |
619+ | 3.91 грн |
ZXTR2005Z-13 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
на замовлення 4528 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
20+ | 20.58 грн |
22+ | 18.29 грн |
26+ | 15.68 грн |
50+ | 14.17 грн |
80+ | 11.80 грн |
218+ | 11.16 грн |
2500+ | 10.77 грн |
BSS84Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
BSS84Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1226 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.23 грн |
53+ | 7.60 грн |
60+ | 6.65 грн |
88+ | 4.54 грн |
103+ | 3.88 грн |
329+ | 2.85 грн |
500+ | 2.75 грн |
903+ | 2.69 грн |
1000+ | 2.58 грн |
BSS84W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 4125 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
42+ | 9.58 грн |
52+ | 7.66 грн |
100+ | 6.94 грн |
285+ | 3.29 грн |
782+ | 3.10 грн |
BZT52C9V1-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
62+ | 6.94 грн |
84+ | 4.75 грн |
104+ | 3.83 грн |
157+ | 2.53 грн |
500+ | 1.68 грн |
777+ | 1.20 грн |
BC858A-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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В кошику
од. на суму грн.
BC858AW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
BAW56T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 684 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
51+ | 7.84 грн |
107+ | 3.71 грн |
500+ | 2.41 грн |
580+ | 1.60 грн |
BAW56W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
на замовлення 2798 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
71+ | 5.62 грн |
83+ | 4.79 грн |
128+ | 3.11 грн |
500+ | 2.15 грн |
645+ | 1.44 грн |
1772+ | 1.36 грн |
FMMT593TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Power dissipation: 0.5W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Power dissipation: 0.5W
на замовлення 1823 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 38.37 грн |
16+ | 25.49 грн |
50+ | 17.42 грн |
100+ | 14.81 грн |
110+ | 8.47 грн |
301+ | 8.00 грн |
FMMT597TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23
Collector current: 0.2A
Power dissipation: 0.5W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23
Collector current: 0.2A
Power dissipation: 0.5W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 1008 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.52 грн |
16+ | 25.10 грн |
25+ | 20.43 грн |
50+ | 17.42 грн |
100+ | 15.04 грн |
110+ | 8.47 грн |
301+ | 8.08 грн |
FMMT620TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 160MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 160MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 624 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.42 грн |
18+ | 22.80 грн |
50+ | 19.32 грн |
75+ | 12.51 грн |
205+ | 11.88 грн |
FMMT634TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.625W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.625W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 3051 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.27 грн |
10+ | 42.44 грн |
11+ | 36.58 грн |
50+ | 23.91 грн |
62+ | 15.04 грн |
171+ | 14.17 грн |
1000+ | 13.70 грн |
FMMT722TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 2991 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.55 грн |
18+ | 22.01 грн |
21+ | 19.71 грн |
67+ | 14.01 грн |
183+ | 13.22 грн |
BAS16LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.53 грн |
100+ | 6.28 грн |
BAS16Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
на замовлення 5550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.69 грн |
225+ | 1.84 грн |
500+ | 1.74 грн |
650+ | 1.43 грн |
1800+ | 1.35 грн |
AL5801W6-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Number of channels: 1
Operating voltage: 5...100V DC
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Integrated circuit features: PWM
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Number of channels: 1
Operating voltage: 5...100V DC
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Integrated circuit features: PWM
на замовлення 772 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.66 грн |
17+ | 23.67 грн |
25+ | 21.06 грн |
56+ | 16.94 грн |
152+ | 15.99 грн |
BC846BW-13-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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од. на суму грн.
BC846BW-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
59+ | 6.81 грн |
100+ | 4.49 грн |
500+ | 2.90 грн |
726+ | 1.28 грн |
1997+ | 1.21 грн |
LM2903QS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
на замовлення 2302 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.55 грн |
23+ | 17.81 грн |
28+ | 14.25 грн |
100+ | 10.29 грн |
117+ | 8.00 грн |
320+ | 7.60 грн |
500+ | 7.36 грн |
BAV199WQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Max. load current: 0.5A
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
52+ | 7.76 грн |
75+ | 5.29 грн |
100+ | 4.65 грн |
389+ | 2.40 грн |
500+ | 2.39 грн |
1070+ | 2.26 грн |
BAT54AW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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од. на суму грн.
BAS21Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
на замовлення 3098 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
150+ | 3.04 грн |
200+ | 2.05 грн |
500+ | 1.81 грн |
575+ | 1.67 грн |
1550+ | 1.58 грн |
DMT6009LCT |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6011LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6012LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6015LFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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BC847CQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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BC847CT-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 533 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.79 грн |
40+ | 9.98 грн |
46+ | 8.63 грн |
100+ | 4.86 грн |
500+ | 3.25 грн |