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AZ431LBZTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.25V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.25V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.25...18V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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ZXTD718MCTA ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2676 шт:
термін постачання 21-30 дні (днів)
8+57.40 грн
10+47.15 грн
100+33.38 грн
500+25.91 грн
1000+25.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ5.0AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DPLS350E-13 DIODES INCORPORATED ds31230.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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BC857BSQ-7-F BC857BSQ-7-F DIODES INCORPORATED ds30373.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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ES3BB-13-F ES3BB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
на замовлення 1476 шт:
термін постачання 21-30 дні (днів)
10+44.16 грн
16+27.23 грн
25+24.68 грн
100+20.99 грн
250+18.53 грн
500+16.73 грн
1000+16.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES3B-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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GBJ2010-F DIODES INCORPORATED GBJ20005%7EGBJ2010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
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RS1JDFQ-13 DIODES INCORPORATED RS1JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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FRS1JE DIODES INCORPORATED FRS1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO219AA; Ufmax: 1.3V
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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MMBTA63-7-F MMBTA63-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 5000...10000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Quantity in set/package: 3000pcs.
на замовлення 2729 шт:
термін постачання 21-30 дні (днів)
36+12.36 грн
49+8.45 грн
100+4.90 грн
500+3.37 грн
1000+2.91 грн
Мінімальне замовлення: 36
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SMAJ15AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DXT2907A-13 DIODES INCORPORATED ds30944.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Quantity in set/package: 2500pcs.
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SMBJ36AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SBR20100CT DIODES INCORPORATED SBR20100CT%20N0911%20REV.A.pdf SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20100CT-G DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20100CTFP DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20A60CTB DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SBR20A60CTBQ-13 DIODES INCORPORATED SBR20A60CTBQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; Ufmax: 790mV; SBR®
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.79V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SBR20A60CTFP DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SMBJ30AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ24AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FMMT558QTA FMMT558QTA DIODES INCORPORATED FMMT558.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 1393 шт:
термін постачання 21-30 дні (днів)
10+48.57 грн
12+35.59 грн
14+30.26 грн
100+16.89 грн
500+12.30 грн
1000+11.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FMMTA42TA FMMTA42TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1303E90D20D6&compId=FMMTA42.pdf?ci_sign=0f407f16b47547f7b3d2a46babda81b20e5c48ef Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.35W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
на замовлення 3030 шт:
термін постачання 21-30 дні (днів)
28+15.90 грн
33+12.46 грн
100+8.01 грн
500+5.74 грн
1000+5.07 грн
3000+4.22 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAW56DW-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56DWQ-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAW56HDW-13 DIODES INCORPORATED BAW56HDW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56HDWQ-13 DIODES INCORPORATED BAW56HDWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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RS1MDFQ-13 DIODES INCORPORATED RS1MDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 DIODES INCORPORATED RS1MEWFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 DIODES INCORPORATED FRS1ME.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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FRS1MEQ-7 DIODES INCORPORATED FRS1MEQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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MMDT2222A-7-F DIODES INCORPORATED ds30125.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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SMBJ18CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DXT2222A-13 DIODES INCORPORATED DXT2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.8A
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
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DZT2222A-13 DIODES INCORPORATED ds30481.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
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SMAJ24CA-13-F SMAJ24CA-13-F DIODES INCORPORATED SMAJ5.0CA-SMAJ200CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ24CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ULN2002AS16-13 DIODES INCORPORATED ULN200xA.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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P6SMAJ26ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMC2038LVT-7 DMC2038LVT-7 DIODES INCORPORATED DMC2038LVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 2841 шт:
термін постачання 21-30 дні (днів)
28+15.90 грн
30+13.78 грн
32+12.96 грн
50+9.43 грн
100+7.95 грн
500+5.74 грн
1000+5.66 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BCP5510TA BCP5510TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
27+16.78 грн
37+11.15 грн
100+6.95 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
DMG2305UX-7 DMG2305UX-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA30F091E90748&compId=DMG2305UX.pdf?ci_sign=b2aee761d96502e454a9031a06ee1790bb085110 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)
50+8.83 грн
64+6.48 грн
79+5.23 грн
100+4.73 грн
500+3.81 грн
1000+3.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SMBJ15AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DDTC114EUAQ-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
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BCX5316QTA DIODES INCORPORATED BCX5216Q_BCX5316Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Application: automotive industry
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BZT52C5V1Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
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BCP5116TA BCP5116TA DIODES INCORPORATED BCP51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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BCP51TA BCP51TA DIODES INCORPORATED BCP51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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BCP5110TA BCP5110TA DIODES INCORPORATED BCP51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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74LVC07AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EEC2D13A0D3&compId=74LVC07A.pdf?ci_sign=a5309a5a7d7af005738bd43722b32bf747351433 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 6; CMOS; SMD; SO14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 6
Technology: CMOS
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DMC6040SSD-13 DMC6040SSD-13 DIODES INCORPORATED DMC6040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 1613 шт:
термін постачання 21-30 дні (днів)
8+56.52 грн
12+36.57 грн
50+28.37 грн
100+25.34 грн
500+19.11 грн
1000+18.04 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AS78L15RTR-E1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
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AS78L15RTR-G1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
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BZT52C3V6-7-F BZT52C3V6-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 6968 шт:
термін постачання 21-30 дні (днів)
63+7.07 грн
72+5.74 грн
82+5.00 грн
144+2.86 грн
250+2.29 грн
500+1.94 грн
1000+1.68 грн
3000+1.37 грн
6000+1.24 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BCX5110TA BCX5110TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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74LVC1G14FZ4-7 DIODES INCORPORATED 74LVC1G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of integrated circuit: inverter
Kind of output: push-pull
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74LVC1G34Z-7 74LVC1G34Z-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEEA9D53E037E28&compId=74LVC1G34.pdf?ci_sign=5ea66389d29c19de6639775cdfa7e5e92b23919a Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
на замовлення 3698 шт:
термін постачання 21-30 дні (днів)
109+4.06 грн
114+3.61 грн
118+3.48 грн
500+3.28 грн
Мінімальне замовлення: 109
В кошику  од. на суму  грн.
DDTC123YCA-7-F DDTC123YCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)
84+5.30 грн
139+2.95 грн
157+2.62 грн
192+2.14 грн
500+1.77 грн
1000+1.65 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
AZ431LBZTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.25V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.25V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.25...18V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2676 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.40 грн
10+47.15 грн
100+33.38 грн
500+25.91 грн
1000+25.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ5.0AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DPLS350E-13 ds31230.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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BC857BSQ-7-F ds30373.pdf
BC857BSQ-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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SMBJ30CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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ES3BB-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd
ES3BB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
на замовлення 1476 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.16 грн
16+27.23 грн
25+24.68 грн
100+20.99 грн
250+18.53 грн
500+16.73 грн
1000+16.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES3B-13-F ds14003.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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GBJ2010-F GBJ20005%7EGBJ2010.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
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RS1JDFQ-13 RS1JDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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FRS1JE FRS1JE.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO219AA; Ufmax: 1.3V
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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MMBTA63-7-F ds30055.pdf
MMBTA63-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 5000...10000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Quantity in set/package: 3000pcs.
на замовлення 2729 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.36 грн
49+8.45 грн
100+4.90 грн
500+3.37 грн
1000+2.91 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SMAJ15AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DXT2907A-13 ds30944.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Quantity in set/package: 2500pcs.
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SMBJ36AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SBR20100CT SBR20100CT%20N0911%20REV.A.pdf SBR20100.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20100CT-G SBR20100.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20100CTFP SBR20100.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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SBR20A60CTB SBR20A60CT_CTB_CTFP.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SBR20A60CTBQ-13 SBR20A60CTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; Ufmax: 790mV; SBR®
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.79V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SBR20A60CTFP SBR20A60CT_CTB_CTFP.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 60V
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
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SMBJ30AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ24AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FMMT558QTA FMMT558.pdf
FMMT558QTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 1393 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+48.57 грн
12+35.59 грн
14+30.26 грн
100+16.89 грн
500+12.30 грн
1000+11.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FMMTA42TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1303E90D20D6&compId=FMMTA42.pdf?ci_sign=0f407f16b47547f7b3d2a46babda81b20e5c48ef
FMMTA42TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.35W
Collector-emitter voltage: 300V
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
на замовлення 3030 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.90 грн
33+12.46 грн
100+8.01 грн
500+5.74 грн
1000+5.07 грн
3000+4.22 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAW56DW-7-F ds30146.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56DWQ-7-F ds30146.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAW56HDW-13 BAW56HDW.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56HDWQ-13 BAW56HDWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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RS1MDFQ-13 RS1MDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 RS1MEWFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 FRS1ME.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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FRS1MEQ-7 FRS1MEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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MMDT2222A-7-F ds30125.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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SMBJ18CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DXT2222A-13 DXT2222A.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.8A
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
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DZT2222A-13 ds30481.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
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SMAJ24CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ24CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ24CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ULN2002AS16-13 ULN200xA.pdf
Виробник: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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P6SMAJ26ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMC2038LVT-7 DMC2038LVT-7.pdf
DMC2038LVT-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 2841 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.90 грн
30+13.78 грн
32+12.96 грн
50+9.43 грн
100+7.95 грн
500+5.74 грн
1000+5.66 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BCP5510TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP5510TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.78 грн
37+11.15 грн
100+6.95 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
DMG2305UX-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA30F091E90748&compId=DMG2305UX.pdf?ci_sign=b2aee761d96502e454a9031a06ee1790bb085110
DMG2305UX-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.83 грн
64+6.48 грн
79+5.23 грн
100+4.73 грн
500+3.81 грн
1000+3.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SMBJ15AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DDTC114EUAQ-7-F ds30321.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
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BCX5316QTA BCX5216Q_BCX5316Q.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Application: automotive industry
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BZT52C5V1Q-7-F ds18004.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
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BCP5116TA BCP51_52_53.pdf
BCP5116TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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BCP51TA BCP51_52_53.pdf
BCP51TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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BCP5110TA BCP51_52_53.pdf
BCP5110TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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74LVC07AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EEC2D13A0D3&compId=74LVC07A.pdf?ci_sign=a5309a5a7d7af005738bd43722b32bf747351433
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 6; CMOS; SMD; SO14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 6
Technology: CMOS
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DMC6040SSD-13 DMC6040SSD-13.pdf
DMC6040SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 1613 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.52 грн
12+36.57 грн
50+28.37 грн
100+25.34 грн
500+19.11 грн
1000+18.04 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AS78L15RTR-E1 AS78Lxx_Aug2013_DS.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
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AS78L15RTR-G1 AS78Lxx_Aug2013_DS.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
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BZT52C3V6-7-F BZT52Cxx_ser.pdf
BZT52C3V6-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 6968 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.07 грн
72+5.74 грн
82+5.00 грн
144+2.86 грн
250+2.29 грн
500+1.94 грн
1000+1.68 грн
3000+1.37 грн
6000+1.24 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BCX5110TA BCX51_52_53.pdf
BCX5110TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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74LVC1G14FZ4-7 74LVC1G14.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of integrated circuit: inverter
Kind of output: push-pull
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74LVC1G34Z-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEEA9D53E037E28&compId=74LVC1G34.pdf?ci_sign=5ea66389d29c19de6639775cdfa7e5e92b23919a
74LVC1G34Z-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
на замовлення 3698 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
109+4.06 грн
114+3.61 грн
118+3.48 грн
500+3.28 грн
Мінімальне замовлення: 109
В кошику  од. на суму  грн.
DDTC123YCA-7-F ds30330.pdf
DDTC123YCA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
84+5.30 грн
139+2.95 грн
157+2.62 грн
192+2.14 грн
500+1.77 грн
1000+1.65 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
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