Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74093) > Сторінка 1198 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| MMBZ5257BTS-7-F | DIODES INCORPORATED |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT363 Kind of package: reel; tape Semiconductor structure: triple independent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DDTA123ECA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 20 Quantity in set/package: 3000pcs. Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DDTA123EE-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 20 Quantity in set/package: 3000pcs. Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ75A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 5009 шт: термін постачання 14-30 дні (днів) |
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SMAJ75CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| P6SMAJ75ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| P6SMAJ75ADFQ-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMN1054UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Mounting: SMD Case: X1-WLB0808-4 Power dissipation: 1.34W Gate charge: 15nC Polarisation: unipolar Drain current: 3.2A Kind of channel: enhancement Drain-source voltage: 8V Type of transistor: N-MOSFET Gate-source voltage: ±5V Kind of package: 7 inch reel; tape On-state resistance: 0.11Ω Pulsed drain current: 8A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| T5V0DLP-7B | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array Type of diode: TVS array Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
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DF005S-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74LVC2G06FX4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1409-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Family: LVC |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2G06FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Family: LVC |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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74LVC2G06W6-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 2 Technology: CMOS Mounting: SMD Case: SOT26 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| D3V3XA4B10LP-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array Type of diode: TVS array Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| D3V3XA4B10LP-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10 Type of diode: TVS array Breakdown voltage: 5V Peak pulse power dissipation: 24W Semiconductor structure: bidirectional Version: ESD Mounting: SMD Case: U-DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Application: USB |
на замовлення 9000 шт: термін постачання 14-30 дні (днів) |
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BAW156TQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common anode; double Features of semiconductor devices: small signal Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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KBJ601G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A Max. forward impulse current: 170A Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 0.1kV Electrical mounting: THT Load current: 6A Kind of package: tube Case: KBJ Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN601WK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN601WKQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN601WKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDZ12ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847PN-7R-F | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847PNQ-7-F | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847PNQ-7R-F | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB1100H-13-F | DIODES INCORPORATED |
Category: Thyristors - others Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V Case: SMB Mounting: SMD Max. off-state voltage: 90V Semiconductor structure: bidirectional Max. forward impulse current: 100A Kind of package: reel; tape Breakover voltage: 130V Type of thyristor: TSS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZVN2120GTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.32A Pulsed drain current: 2A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PD3S120L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Case: PowerDI®323 Mounting: SMD Semiconductor structure: single diode Capacitance: 49pF Leakage current: 30mA Max. forward voltage: 0.42V Load current: 1A Max. forward impulse current: 33A Max. off-state voltage: 20V |
на замовлення 2900 шт: термін постачання 14-30 дні (днів) |
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74HCT126T14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Operating temperature: -40...150°C Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2210N-5.0TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 0.3A Case: SOT23 Mounting: SMD Manufacturer series: AP2210 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...13V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2210N-4.0TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 4V Output current: 0.3A Case: SOT23 Mounting: SMD Manufacturer series: AP2210 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...13V |
на замовлення 1615 шт: термін постачання 14-30 дні (днів) |
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AP2210N-3.0TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3V Output current: 0.3A Case: SOT23 Mounting: SMD Manufacturer series: AP2210 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.5...13.2V |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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AP2210N-2.5TRE1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 2.5V Output current: 0.3A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.5...13.2V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BZT585B20T-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 20V Mounting: SMD Tolerance: ±2% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SMF4L24A-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: DO219AA Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| AP2213D-3.3TRE1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO252; SMD Mounting: SMD Tolerance: ±1% Operating temperature: -40...125°C Output current: 0.5A Voltage drop: 0.7V Number of channels: 1 Output voltage: 3.3V Input voltage: 2.5...18V Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP2213 Kind of package: reel; tape Case: TO252 Type of integrated circuit: voltage regulator |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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AP2213H-3.3TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 3.3V Output current: 0.5A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape Tolerance: ±1% Input voltage: 2.5...18V Manufacturer series: AP2213 Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
| DGD2190MS8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4.5...4.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 45ns Supply voltage: 10...20V Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DGD2103MS8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DGD2304S8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DDZ9688-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; reel,tape; single diode Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Mounting: SMD Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Tolerance: ±5% |
на замовлення 202 шт: термін постачання 14-30 дні (днів) |
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DMN2044UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 16A Power dissipation: 1.18W Case: U-WLB1010-4 Gate-source voltage: ±8V On-state resistance: 70mΩ Mounting: SMD Gate charge: 47nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
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| APR3415MTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; SO8; flyback; 3.3÷6V Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC switcher; PWM controller Case: SO8 Mounting: SMD Operating temperature: -40...85°C Topology: flyback Supply voltage: 3.3...6V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMN2005LP4K-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMN2005LP4K-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3 Power dissipation: 0.4W Mounting: SMD Case: X2-DFN1006-3 Kind of package: 7 inch reel; tape Drain current: 0.35A On-state resistance: 3.5Ω Gate-source voltage: ±10V Drain-source voltage: 20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
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В кошику од. на суму грн. | |||||||||||||||||
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BAS70DW-04Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double x2 Capacitance: 2pF Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.1A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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ZHCS350TA | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.35A; 1.6ns; 330mW Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.35A Semiconductor structure: single diode Capacitance: 3.3pF Max. forward voltage: 0.405V Max. forward impulse current: 0.91A Reverse recovery time: 1.6ns Kind of package: reel; tape Power dissipation: 0.33W |
на замовлення 1999 шт: термін постачання 14-30 дні (днів) |
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MMBTA14-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Manufacturer standard package: 3000pcs. |
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В кошику од. на суму грн. | ||||||||||||||||
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MMBTA64-7-F | DIODES INCORPORATED |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Manufacturer standard package: 3000pcs. Current gain: 10000...20000 |
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В кошику од. на суму грн. | ||||||||||||||||
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ZMR500QFTA | DIODES INCORPORATED |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR Mounting: SMD Operating temperature: -50...125°C Type of integrated circuit: voltage regulator Voltage drop: 0.005V Application: automotive industry Output voltage: 5V Kind of package: reel; tape Case: SOT23 Number of channels: 1 Kind of voltage regulator: fixed; linear Manufacturer series: ZMR Input voltage: 7...25V Output current: 50mA |
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В кошику од. на суму грн. | ||||||||||||||||
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ZLLS400TA | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.52A Semiconductor structure: single diode Capacitance: 15pF Max. forward voltage: 0.8V Leakage current: 370µA Max. forward impulse current: 12A Reverse recovery time: 3ns Kind of package: reel; tape Power dissipation: 0.37W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3033LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 13nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN3033LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 13nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||
| ZLDO1117QG33TA | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: ZLDO1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Application: automotive industry Input voltage: 4.7...12V |
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В кошику од. на суму грн. | |||||||||||||||||
| ZLDO1117QK33TC | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: ZLDO1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Application: automotive industry Input voltage: 4.7...12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMG4466SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC On-state resistance: 33mΩ Power dissipation: 1.42W Drain current: 6A Gate-source voltage: ±25V Drain-source voltage: 30V Pulsed drain current: 60A Kind of package: 13 inch reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
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DMG4466SSSL-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC On-state resistance: 33mΩ Power dissipation: 1.42W Drain current: 6A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 60A Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
 |
DMC3028LSDX-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 7.6/-7.2A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.027/0.025Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||
| 74LVC2G126HD4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN2010-8 Operating temperature: -40...150°C Kind of output: 3-state Family: LVC Supply voltage: 1.65...5.5V DC Kind of input: with Schmitt trigger Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2G125HD4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Case: X2-DFN2010-8 Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Number of channels: 2 Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of output: 3-state Technology: CMOS |
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В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2G125RA3-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Case: X2-DFN1210-8 Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Number of channels: 2 Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of output: 3-state Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBZ5257BTS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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В кошику
од. на суму грн.
| DDTA123ECA-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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| DDTA123EE-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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| SMAJ75A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5009 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 40+ | 10.84 грн |
| 46+ | 9.40 грн |
| 100+ | 6.22 грн |
| 500+ | 5.08 грн |
| 1000+ | 4.85 грн |
| 2000+ | 4.68 грн |
| 5000+ | 4.48 грн |
| SMAJ75CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| P6SMAJ75ADF-13 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| P6SMAJ75ADFQ-13 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN1054UCB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Power dissipation: 1.34W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Power dissipation: 1.34W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Pulsed drain current: 8A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| T5V0DLP-7B |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DF005S-T |
|
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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В кошику
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| 74LVC2G06FX4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| 74LVC2G06FZ4-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 74LVC2G06W6-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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| D3V3XA4B10LP-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| D3V3XA4B10LP-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.65 грн |
| BAW156TQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 22+ | 20.06 грн |
| 100+ | 10.07 грн |
| 500+ | 5.27 грн |
| 1000+ | 4.55 грн |
| KBJ601G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. forward impulse current: 170A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: KBJ
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. forward impulse current: 170A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: KBJ
Type of bridge rectifier: single-phase
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| DMN601WK-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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| DMN601WKQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN601WKQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DDZ12ASF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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| BC847PN-7R-F |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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| BC847PNQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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| BC847PNQ-7R-F |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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| TB1100H-13-F |
|
Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Semiconductor structure: bidirectional
Max. forward impulse current: 100A
Kind of package: reel; tape
Breakover voltage: 130V
Type of thyristor: TSS
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Semiconductor structure: bidirectional
Max. forward impulse current: 100A
Kind of package: reel; tape
Breakover voltage: 130V
Type of thyristor: TSS
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| ZVN2120GTA |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PD3S120L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.76 грн |
| 14+ | 32.17 грн |
| 16+ | 28.10 грн |
| 100+ | 17.95 грн |
| 500+ | 13.71 грн |
| 1000+ | 12.70 грн |
| 74HCT126T14-13 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
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| AP2210N-5.0TRG1 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
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| AP2210N-4.0TRG1 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1615 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.59 грн |
| 41+ | 10.50 грн |
| 47+ | 9.14 грн |
| 54+ | 7.87 грн |
| 100+ | 6.35 грн |
| 250+ | 5.59 грн |
| 500+ | 5.25 грн |
| AP2210N-3.0TRG1 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.67 грн |
| 40+ | 10.67 грн |
| 45+ | 9.57 грн |
| 52+ | 8.21 грн |
| AP2210N-2.5TRE1 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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Мінімальне замовлення: 3000 шт
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| BZT585B20T-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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| SMF4L24A-7 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| AP2213D-3.3TRE1 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO252; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 2.5...18V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2213
Kind of package: reel; tape
Case: TO252
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO252; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 2.5...18V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2213
Kind of package: reel; tape
Case: TO252
Type of integrated circuit: voltage regulator
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| AP2213H-3.3TRG1 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 2.5...18V
Manufacturer series: AP2213
Operating temperature: -40...125°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 2.5...18V
Manufacturer series: AP2213
Operating temperature: -40...125°C
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Мінімальне замовлення: 4000 шт
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| DGD2190MS8-13 |
|
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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| DGD2103MS8-13 |
|
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| DGD2304S8-13 |
|
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| DDZ9688-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
на замовлення 202 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.12 грн |
| 61+ | 6.94 грн |
| 107+ | 3.96 грн |
| 200+ | 3.47 грн |
| DMN2044UCB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 16A
Power dissipation: 1.18W
Case: U-WLB1010-4
Gate-source voltage: ±8V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 16A
Power dissipation: 1.18W
Case: U-WLB1010-4
Gate-source voltage: ±8V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 56.52 грн |
| 13+ | 32.59 грн |
| 100+ | 21.08 грн |
| 500+ | 16.08 грн |
| 1000+ | 14.56 грн |
| APR3415MTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; SO8; flyback; 3.3÷6V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 3.3...6V
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; SO8; flyback; 3.3÷6V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 3.3...6V
Kind of package: reel; tape
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Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| DMN2005LP4K-7B |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN2005LP4K-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Power dissipation: 0.4W
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
Drain current: 0.35A
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Power dissipation: 0.4W
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
Drain current: 0.35A
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| BAS70DW-04Q-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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Мінімальне замовлення: 5 шт
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| ZHCS350TA |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.35A; 1.6ns; 330mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 3.3pF
Max. forward voltage: 0.405V
Max. forward impulse current: 0.91A
Reverse recovery time: 1.6ns
Kind of package: reel; tape
Power dissipation: 0.33W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.35A; 1.6ns; 330mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 3.3pF
Max. forward voltage: 0.405V
Max. forward impulse current: 0.91A
Reverse recovery time: 1.6ns
Kind of package: reel; tape
Power dissipation: 0.33W
на замовлення 1999 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.14 грн |
| 26+ | 16.42 грн |
| 28+ | 15.41 грн |
| 50+ | 13.88 грн |
| 100+ | 13.37 грн |
| 500+ | 12.70 грн |
| 1000+ | 12.19 грн |
| 1500+ | 11.85 грн |
| MMBTA14-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
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| MMBTA64-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
Current gain: 10000...20000
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
Current gain: 10000...20000
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| ZMR500QFTA |
|
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Mounting: SMD
Operating temperature: -50...125°C
Type of integrated circuit: voltage regulator
Voltage drop: 0.005V
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Kind of voltage regulator: fixed; linear
Manufacturer series: ZMR
Input voltage: 7...25V
Output current: 50mA
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Mounting: SMD
Operating temperature: -50...125°C
Type of integrated circuit: voltage regulator
Voltage drop: 0.005V
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Kind of voltage regulator: fixed; linear
Manufacturer series: ZMR
Input voltage: 7...25V
Output current: 50mA
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| ZLLS400TA |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.37W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.37W
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| DMN3033LSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMN3033LSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| ZLDO1117QG33TA |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
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| ZLDO1117QK33TC |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
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| DMG4466SSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
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| DMG4466SSSL-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| DMC3028LSDX-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.027/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.027/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC2G126HD4-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC2G125HD4-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Technology: CMOS
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC2G125RA3-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1210-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1210-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Technology: CMOS
товару немає в наявності
В кошику
од. на суму грн.