Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 1198 з 1212
| Фото | Назва | Виробник | Інформація |
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SMBJ20CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2868 шт: термін постачання 21-30 дні (днів) |
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| SMBJ20CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| KBP304G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 3A Max. forward impulse current: 90A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBTA55-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 500mA; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ZVN4206GVTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMG1012T-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.28W Case: SOT523 Gate-source voltage: ±6V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 736.6pC Pulsed drain current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RS1MSWFM-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| US1MDF-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FUS1ME | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FES1JE | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Max. forward voltage: 1.3V Max. forward impulse current: 30A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S5MC-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Capacitance: 40pF Max. forward voltage: 1.15V Max. forward impulse current: 100A Load current: 5A Max. off-state voltage: 1kV Kind of package: reel; tape Case: SMC |
на замовлення 2393 шт: термін постачання 21-30 дні (днів) |
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S8MC-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 8A; SMC; Ufmax: 0.985V; Ifsm: 200A Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Capacitance: 45pF Max. forward voltage: 0.985V Max. forward impulse current: 200A Load current: 8A Max. off-state voltage: 1kV Kind of package: reel; tape Case: SMC |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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BCM857BS-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363 Power dissipation: 0.2W Mounting: SMD Kind of package: reel; tape Case: SOT363 Type of transistor: PNP x2 Collector current: 0.1A Collector-emitter voltage: 45V Current gain: 220...475 Quantity in set/package: 3000pcs. Frequency: 100MHz Polarisation: bipolar |
на замовлення 547 шт: термін постачання 21-30 дні (днів) |
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SB550-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.67V Max. forward impulse current: 150A Kind of package: reel; tape |
на замовлення 276 шт: термін постачання 21-30 дні (днів) |
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| PD3S140-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®323 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Capacitance: 32pF Max. forward voltage: 0.55V Leakage current: 50µA Max. forward impulse current: 22A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BCV46TA | DIODES INCORPORATED |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Pulsed collector current: 0.8A Current gain: 2000...10000 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT54AWQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2044UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W Mounting: SMD Case: U-WLB1010-4 Gate charge: 47nC On-state resistance: 70mΩ Power dissipation: 1.18W Drain current: 3.6A Gate-source voltage: ±8V Drain-source voltage: 20V Pulsed drain current: 16A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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| DMN1054UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Mounting: SMD Case: X1-WLB0808-4 Gate charge: 15nC On-state resistance: 0.11Ω Power dissipation: 1.34W Drain current: 3.2A Gate-source voltage: ±5V Drain-source voltage: 8V Pulsed drain current: 8A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2023UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Gate charge: 37nC On-state resistance: 40mΩ Power dissipation: 1.45W Drain current: 4.8A Gate-source voltage: ±12V Drain-source voltage: 24V Pulsed drain current: 20A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2036UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W Mounting: SMD Case: X2-WLB1616-4 Gate charge: 12.6nC On-state resistance: 52mΩ Power dissipation: 1.45W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 24V Pulsed drain current: 30A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBD4148W-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBD4148TW-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBD4148PLM-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; fivefold Case: U-DFN1616-6 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBR8U60P5-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 8A Semiconductor structure: single diode Case: PowerDI®5 Max. forward voltage: 0.46V Max. forward impulse current: 280A Technology: SBR® Kind of package: reel; tape |
на замовлення 2614 шт: термін постачання 21-30 дні (днів) |
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AP2280-1WG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Mounting: SMD Case: SOT25 On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 1.5...6V DC Active logical level: high Kind of output: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2280-1FMG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2018-6 On-state resistance: 80mΩ Supply voltage: 1.5...6V DC Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch |
на замовлення 767 шт: термін постачання 21-30 дні (днів) |
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| AP22804ASN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Mounting: SMD Case: U-DFN2020-6 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Kind of output: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP22804BSN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Mounting: SMD Case: U-DFN2020-6 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Kind of output: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP2280-2FMG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Mounting: SMD Case: U-DFN2018-6 On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 1.5...6V DC Active logical level: high Kind of output: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP22804AM8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Mounting: SMD Case: MSOP8 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Kind of output: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP22804BM8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Mounting: SMD Case: MSOP8 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Kind of output: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP22804BW5-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Mounting: SMD Case: SOT25 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Kind of output: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| GBJ1504-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 15A Max. forward impulse current: 0.24kA Version: flat Case: GBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SBR2045CT-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR® Type of diode: rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 120A Technology: SBR® Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DPS1135FIA-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; USB switch; 5A; Ch: 1; SMD; VQFN17; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: USB switch Output current: 5A Number of channels: 1 Mounting: SMD Case: VQFN17 On-state resistance: 36mΩ Kind of package: reel; tape Supply voltage: 4...24V DC Active logical level: high Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ200A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 200V Breakdown voltage: 224...247V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| B340AX-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FES1GE | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SDT30100CTFP | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 15A; Ufmax: 750mV; Ir: 100uA Semiconductor structure: common cathode Mounting: THT Type of diode: Schottky rectifying Leakage current: 0.1mA Max. forward voltage: 0.75V Load current: 15A Max. off-state voltage: 100V Max. forward impulse current: 200A |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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MMSZ5226BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 5654 шт: термін постачання 21-30 дні (днів) |
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B220A-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.5V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 20V |
на замовлення 1015 шт: термін постачання 21-30 дні (днів) |
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ZRC330F01TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 5mA Type of integrated circuit: voltage reference source Reference voltage: 3.3V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 5mA |
на замовлення 2867 шт: термін постачання 21-30 дні (днів) |
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| ABS210-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; SOPA4 Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 60A Case: SOPA4 Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSS138-13-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 On-state resistance: 3.5Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P4SMAJ15ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...51.1V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1540 шт: термін постачання 21-30 дні (днів) |
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DMG1023UV-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD Kind of package: 7 inch reel; tape Case: SOT563 Type of transistor: P-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -680mA On-state resistance: 25Ω Power dissipation: 0.53W Gate-source voltage: ±6V Kind of channel: enhancement Version: ESD |
на замовлення 557 шт: термін постачання 21-30 дні (днів) |
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DMG1026UV-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563 Kind of package: 7 inch reel; tape Case: SOT563 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 1A Drain current: 0.3A On-state resistance: 1.8Ω Power dissipation: 0.58W Gate-source voltage: ±20V Kind of channel: enhancement Version: ESD |
на замовлення 823 шт: термін постачання 21-30 дні (днів) |
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AP2301AFGE-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN3030-8 On-state resistance: 70mΩ Supply voltage: 2.7...5.5V DC Active logical level: low Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch |
на замовлення 2320 шт: термін постачання 21-30 дні (днів) |
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| DII74LVC1G04QSE7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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SMBJ26A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1357 шт: термін постачання 21-30 дні (днів) |
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| SMBJ26AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
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BZT52C3V0-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 5442 шт: термін постачання 21-30 дні (днів) |
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| MMBTA56Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FES1DEQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ28CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 6260 шт: термін постачання 21-30 дні (днів) |
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| SMAJ28CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMCJ24A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2339 шт: термін постачання 21-30 дні (днів) |
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| SMCJ24AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| SMBJ20CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2868 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 46+ | 9.00 грн |
| 100+ | 7.10 грн |
| 500+ | 6.19 грн |
| SMBJ20CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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од. на суму грн.
| KBP304G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| MMBTA55-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 500mA; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 500mA; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
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| ZVN4206GVTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| DMG1012T-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
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| RS1MSWFM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| US1MDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| FUS1ME |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| FES1JE |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Application: automotive industry
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| S5MC-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Load current: 5A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
на замовлення 2393 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.24 грн |
| 19+ | 22.13 грн |
| 21+ | 20.56 грн |
| 100+ | 15.94 грн |
| 500+ | 12.88 грн |
| 1000+ | 12.39 грн |
| S8MC-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; SMC; Ufmax: 0.985V; Ifsm: 200A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 45pF
Max. forward voltage: 0.985V
Max. forward impulse current: 200A
Load current: 8A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; SMC; Ufmax: 0.985V; Ifsm: 200A
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 45pF
Max. forward voltage: 0.985V
Max. forward impulse current: 200A
Load current: 8A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: SMC
на замовлення 158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.02 грн |
| 18+ | 23.70 грн |
| 50+ | 20.40 грн |
| 75+ | 19.57 грн |
| 100+ | 19.00 грн |
| 150+ | 18.25 грн |
| BCM857BS-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Power dissipation: 0.2W
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Type of transistor: PNP x2
Collector current: 0.1A
Collector-emitter voltage: 45V
Current gain: 220...475
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Power dissipation: 0.2W
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Type of transistor: PNP x2
Collector current: 0.1A
Collector-emitter voltage: 45V
Current gain: 220...475
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
на замовлення 547 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.78 грн |
| 72+ | 5.78 грн |
| 100+ | 4.43 грн |
| 500+ | 3.53 грн |
| SB550-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 276 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.25 грн |
| 11+ | 39.81 грн |
| 12+ | 35.84 грн |
| 100+ | 24.86 грн |
| PD3S140-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 32pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 32pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 22A
Kind of package: reel; tape
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| BCV46TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.8A
Current gain: 2000...10000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.8A
Current gain: 2000...10000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
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| BAT54AWQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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| DMN2044UCB4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Case: U-WLB1010-4
Gate charge: 47nC
On-state resistance: 70mΩ
Power dissipation: 1.18W
Drain current: 3.6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 16A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Case: U-WLB1010-4
Gate charge: 47nC
On-state resistance: 70mΩ
Power dissipation: 1.18W
Drain current: 3.6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 16A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.81 грн |
| 13+ | 33.37 грн |
| 30+ | 27.50 грн |
| 100+ | 22.22 грн |
| 500+ | 16.85 грн |
| 1000+ | 15.11 грн |
| DMN1054UCB4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Gate charge: 15nC
On-state resistance: 0.11Ω
Power dissipation: 1.34W
Drain current: 3.2A
Gate-source voltage: ±5V
Drain-source voltage: 8V
Pulsed drain current: 8A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Gate charge: 15nC
On-state resistance: 0.11Ω
Power dissipation: 1.34W
Drain current: 3.2A
Gate-source voltage: ±5V
Drain-source voltage: 8V
Pulsed drain current: 8A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| DMN2023UCB4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Gate charge: 37nC
On-state resistance: 40mΩ
Power dissipation: 1.45W
Drain current: 4.8A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 20A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Gate charge: 37nC
On-state resistance: 40mΩ
Power dissipation: 1.45W
Drain current: 4.8A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 20A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| DMN2036UCB4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Gate charge: 12.6nC
On-state resistance: 52mΩ
Power dissipation: 1.45W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 30A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Gate charge: 12.6nC
On-state resistance: 52mΩ
Power dissipation: 1.45W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 24V
Pulsed drain current: 30A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| MMBD4148W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| MMBD4148TW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| MMBD4148PLM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| SBR8U60P5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
на замовлення 2614 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.04 грн |
| 10+ | 44.02 грн |
| 100+ | 34.11 грн |
| 250+ | 30.97 грн |
| 500+ | 28.82 грн |
| 1000+ | 26.92 грн |
| 2000+ | 25.11 грн |
| AP2280-1WG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
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| AP2280-1FMG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
на замовлення 767 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.91 грн |
| 16+ | 26.59 грн |
| 25+ | 24.36 грн |
| 100+ | 20.89 грн |
| 250+ | 18.66 грн |
| 500+ | 17.01 грн |
| AP22804ASN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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| AP22804BSN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
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| AP2280-2FMG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
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| AP22804AM8-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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| AP22804BM8-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
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| AP22804BW5-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of output: P-Channel
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| GBJ1504-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| SBR2045CT-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
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| DPS1135FIA-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 5A; Ch: 1; SMD; VQFN17; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Output current: 5A
Number of channels: 1
Mounting: SMD
Case: VQFN17
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4...24V DC
Active logical level: high
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 5A; Ch: 1; SMD; VQFN17; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Output current: 5A
Number of channels: 1
Mounting: SMD
Case: VQFN17
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4...24V DC
Active logical level: high
Operating temperature: -40...125°C
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| SMBJ200A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| B340AX-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
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| FES1GE |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| SDT30100CTFP |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15A; Ufmax: 750mV; Ir: 100uA
Semiconductor structure: common cathode
Mounting: THT
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 100V
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15A; Ufmax: 750mV; Ir: 100uA
Semiconductor structure: common cathode
Mounting: THT
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 100V
Max. forward impulse current: 200A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.91 грн |
| 13+ | 33.94 грн |
| 50+ | 31.47 грн |
| 100+ | 30.06 грн |
| MMSZ5226BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 5654 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.78 грн |
| 66+ | 6.28 грн |
| 82+ | 5.04 грн |
| 134+ | 3.10 грн |
| 3000+ | 1.83 грн |
| B220A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 20V
на замовлення 1015 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.57 грн |
| 27+ | 15.53 грн |
| 29+ | 14.29 грн |
| 100+ | 10.24 грн |
| 125+ | 9.91 грн |
| 250+ | 8.84 грн |
| 500+ | 7.93 грн |
| 1000+ | 7.10 грн |
| ZRC330F01TA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
на замовлення 2867 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.71 грн |
| 10+ | 47.24 грн |
| 25+ | 42.78 грн |
| 50+ | 39.97 грн |
| 100+ | 37.74 грн |
| 250+ | 35.27 грн |
| 500+ | 34.11 грн |
| ABS210-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: SOPA4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: SOPA4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
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| BSS138-13-F |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
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| P4SMAJ15ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMBJ40CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1540 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.67 грн |
| 50+ | 8.42 грн |
| 55+ | 7.60 грн |
| 62+ | 6.69 грн |
| 100+ | 6.44 грн |
| DMG1023UV-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
на замовлення 557 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.69 грн |
| 17+ | 24.94 грн |
| 20+ | 21.39 грн |
| 100+ | 12.22 грн |
| 500+ | 8.59 грн |
| DMG1026UV-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 1A
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Gate-source voltage: ±20V
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 1A
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Gate-source voltage: ±20V
Kind of channel: enhancement
Version: ESD
на замовлення 823 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.69 грн |
| 19+ | 21.80 грн |
| 50+ | 15.36 грн |
| 100+ | 13.13 грн |
| 500+ | 9.50 грн |
| AP2301AFGE-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN3030-8
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN3030-8
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 24+ | 17.43 грн |
| 27+ | 15.53 грн |
| 100+ | 14.62 грн |
| DII74LVC1G04QSE7 |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.45 грн |
| SMBJ26A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1357 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.57 грн |
| 28+ | 15.03 грн |
| 33+ | 12.64 грн |
| 45+ | 9.33 грн |
| 100+ | 5.78 грн |
| 500+ | 5.29 грн |
| SMBJ26AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| BZT52C3V0-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 5442 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.12 грн |
| 80+ | 5.20 грн |
| 97+ | 4.26 грн |
| 135+ | 3.07 грн |
| 500+ | 2.16 грн |
| 1000+ | 1.89 грн |
| 3000+ | 1.58 грн |
| MMBTA56Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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| FES1DEQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| SMAJ28CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 6260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.90 грн |
| 39+ | 10.65 грн |
| 100+ | 5.53 грн |
| 500+ | 5.29 грн |
| 1000+ | 5.04 грн |
| 5000+ | 4.54 грн |
| SMAJ28CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMCJ24A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2339 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.46 грн |
| 18+ | 23.79 грн |
| SMCJ24AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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