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BC807-40Q-7-F BC807-40Q-7-F DIODES INCORPORATED BC807-16_-25_-40.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
39+11.32 грн
42+9.78 грн
100+6.11 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BC807-40W-7 BC807-40W-7 DIODES INCORPORATED BC807-16W_-25W_-40W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 5536 шт:
термін постачання 21-30 дні (днів)
30+14.80 грн
42+9.78 грн
100+5.73 грн
500+3.95 грн
1000+3.41 грн
3000+2.77 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DSS2515M-7 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Collector-emitter voltage: 15V
Quantity in set/package: 3000pcs.
Current gain: 90...200
Frequency: 250MHz
Polarisation: bipolar
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DSS2515M-7B DIODES INCORPORATED DSS2515M.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Collector-emitter voltage: 15V
Quantity in set/package: 10000pcs.
Current gain: 90...200
Frequency: 250MHz
Polarisation: bipolar
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DSS2540M-7B DIODES INCORPORATED DSS2540M.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Current gain: 50...200
Frequency: 250...300MHz
Polarisation: bipolar
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ULN2004AS16-13 DIODES INCORPORATED ULN200xA.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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BC848A-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848AW-7-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848B-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT2222A-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222ALP4-7B DIODES INCORPORATED MMBT2222ALP4.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222AQ-7-F DIODES INCORPORATED ds30041.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
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SMAJ12AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ12CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ12ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BCR421UW6-7 BCR421UW6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B19366AAC98748&compId=BCR420UW6_BCR421UW6.pdf?ci_sign=38b4bc5119c21fd29eeecfdb22442e44906a3653 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
20+22.64 грн
24+16.98 грн
27+15.12 грн
32+13.02 грн
50+11.81 грн
100+11.40 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMP2240UDM-7 DMP2240UDM-7 DIODES INCORPORATED ds31197.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 6847 шт:
термін постачання 21-30 дні (днів)
17+26.13 грн
26+16.01 грн
100+12.29 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BC846AQ-7-F BC846AQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
34+13.06 грн
55+7.44 грн
100+4.36 грн
500+3.11 грн
1000+2.71 грн
3000+2.22 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BC846ASQ-7-F DIODES INCORPORATED BC846ASQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC847CDLP-7 DIODES INCORPORATED ds30817.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 350mW; X2-DFN1310-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: X2-DFN1310-6
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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BC857CQ-7-F DIODES INCORPORATED BC857CQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC817-25Q-7-F DIODES INCORPORATED BC817-16Q_25Q_40Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
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BAV21HWF-7 DIODES INCORPORATED BAV21HWF.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21HWFQ-7 DIODES INCORPORATED BAV21HWFQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21WQ-7-F DIODES INCORPORATED BAV19W-BAV21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Application: automotive industry
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BAV21WS-13-F DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
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SBR10U300CTFP DIODES INCORPORATED SBR10U300.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.92V
Kind of package: tube
Technology: SBR®
Max. load current: 10A
Max. forward impulse current: 150A
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ES1J-13-F DIODES INCORPORATED ES1J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: superfast switching
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1SS361LP3-7 DIODES INCORPORATED 1SS361LP3.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361LPH4-7B DIODES INCORPORATED 1SS361LPH4.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; Ufmax: 1.2V
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361UDJ-7 DIODES INCORPORATED 1SS361UDJ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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AZ431AZ-ATRE1 DIODES INCORPORATED AZ431A.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431AZ-ATRG1 DIODES INCORPORATED AZ431A.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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MMBT3904FA-7B DIODES INCORPORATED MMBT3904FA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904FZ-7B DIODES INCORPORATED MMBT3904FZ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904LP-7B DIODES INCORPORATED ds31835.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3904Q-7-F DIODES INCORPORATED MMBT3904Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT3906LP-7B DIODES INCORPORATED MMBT3906LP.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906FA-7B DIODES INCORPORATED MMBT3906FA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906FZ-7B DIODES INCORPORATED MMBT3906FZ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906LP-7 DIODES INCORPORATED MMBT3906LP.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT3906T-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
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AZ431AN-ATRG1 DIODES INCORPORATED AZ431A.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431AR-ATRE1 DIODES INCORPORATED AZ431A.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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SMAJ5.0AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ5.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MUR160-T DIODES INCORPORATED ds30112.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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US1GWF-7 DIODES INCORPORATED US1GWF.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
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SBR10100CT DIODES INCORPORATED SBR10100.pdf SBR10100CT%20N0899%20REV.A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTB-13 DIODES INCORPORATED SBR10100CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; Ufmax: 840mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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SBR10100CTB DIODES INCORPORATED SBR10100CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; Ufmax: 840mV; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTFP-G DIODES INCORPORATED Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTL-13 DIODES INCORPORATED SBR10100CTL.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; Ufmax: 840mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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BAV199TQ-7-F DIODES INCORPORATED BAV199TQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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AZ431LBRTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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MCR100-8 DIODES INCORPORATED MCR100-8.pdf description Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Mounting: SMD
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Case: SOT23
Type of thyristor: thyristor
Gate current: 50µA
Load current: 0.25A
Max. forward impulse current: 9A
Kind of package: reel; tape
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DSS4140U-7 DIODES INCORPORATED ds31689.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 200...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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DSS4140V-7 DIODES INCORPORATED ds31655.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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DSS4160DS-7 DIODES INCORPORATED DSS4160DS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
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BC807-40Q-7-F BC807-16_-25_-40.pdf
BC807-40Q-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.32 грн
42+9.78 грн
100+6.11 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BC807-40W-7 BC807-16W_-25W_-40W.pdf
BC807-40W-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 5536 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.80 грн
42+9.78 грн
100+5.73 грн
500+3.95 грн
1000+3.41 грн
3000+2.77 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DSS2515M-7
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Collector-emitter voltage: 15V
Quantity in set/package: 3000pcs.
Current gain: 90...200
Frequency: 250MHz
Polarisation: bipolar
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DSS2515M-7B DSS2515M.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Collector-emitter voltage: 15V
Quantity in set/package: 10000pcs.
Current gain: 90...200
Frequency: 250MHz
Polarisation: bipolar
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DSS2540M-7B DSS2540M.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Current gain: 50...200
Frequency: 250...300MHz
Polarisation: bipolar
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ULN2004AS16-13 ULN200xA.pdf
Виробник: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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BC848A-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848AW-7-F BC846AW-BC848CW.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848B-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT2222A-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222ALP4-7B MMBT2222ALP4.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222AQ-7-F ds30041.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
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SMAJ12AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ12CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ12ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BCR421UW6-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B19366AAC98748&compId=BCR420UW6_BCR421UW6.pdf?ci_sign=38b4bc5119c21fd29eeecfdb22442e44906a3653
BCR421UW6-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.64 грн
24+16.98 грн
27+15.12 грн
32+13.02 грн
50+11.81 грн
100+11.40 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMP2240UDM-7 ds31197.pdf
DMP2240UDM-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 6847 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.13 грн
26+16.01 грн
100+12.29 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BC846AQ-7-F ds11108.pdf
BC846AQ-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.06 грн
55+7.44 грн
100+4.36 грн
500+3.11 грн
1000+2.71 грн
3000+2.22 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BC846ASQ-7-F BC846ASQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC847CDLP-7 ds30817.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 350mW; X2-DFN1310-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: X2-DFN1310-6
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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BC857CQ-7-F BC857CQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC817-25Q-7-F BC817-16Q_25Q_40Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
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BAV21HWF-7 BAV21HWF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21HWFQ-7 BAV21HWFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21WQ-7-F BAV19W-BAV21W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Application: automotive industry
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BAV21WS-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
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SBR10U300CTFP SBR10U300.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.92V
Kind of package: tube
Technology: SBR®
Max. load current: 10A
Max. forward impulse current: 150A
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ES1J-13-F ES1J.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: superfast switching
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1SS361LP3-7 1SS361LP3.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361LPH4-7B 1SS361LPH4.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; Ufmax: 1.2V
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361UDJ-7 1SS361UDJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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AZ431AZ-ATRE1 AZ431A.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431AZ-ATRG1 AZ431A.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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MMBT3904FA-7B MMBT3904FA.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904FZ-7B MMBT3904FZ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904LP-7B ds31835.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3904Q-7-F MMBT3904Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT3906LP-7B MMBT3906LP.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906FA-7B MMBT3906FA.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906FZ-7B MMBT3906FZ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906LP-7 MMBT3906LP.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT3906T-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
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AZ431AN-ATRG1 AZ431A.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431AR-ATRE1 AZ431A.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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SMAJ5.0AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ5.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MUR160-T ds30112.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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US1GWF-7 US1GWF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
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SBR10100CT SBR10100.pdf SBR10100CT%20N0899%20REV.A.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTB-13 SBR10100CTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; Ufmax: 840mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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SBR10100CTB SBR10100CTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; Ufmax: 840mV; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTFP-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTL-13 SBR10100CTL.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; Ufmax: 840mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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BAV199TQ-7-F BAV199TQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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AZ431LBRTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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MCR100-8 description MCR100-8.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Mounting: SMD
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Case: SOT23
Type of thyristor: thyristor
Gate current: 50µA
Load current: 0.25A
Max. forward impulse current: 9A
Kind of package: reel; tape
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DSS4140U-7 ds31689.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 200...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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DSS4140V-7 ds31655.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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В кошику  од. на суму  грн.
DSS4160DS-7 DSS4160DS.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
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