Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72977) > Сторінка 1196 з 1217
| Фото | Назва | Виробник | Інформація |
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| BAS16HLPQ-7B | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: X1-DFN1006-2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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| BAS16HLP-7B | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: X1-DFN1006-2 Kind of package: reel; tape Features of semiconductor devices: small signal |
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| BAS16HTWQ-13R | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
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| BAS16HTW-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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| BAS16HTWQ-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
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SB550-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.67V Max. forward impulse current: 150A Kind of package: reel |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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| 74AHC05T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHC Kind of output: open drain Kind of input: with Schmitt trigger Number of inputs: 1 Technology: CMOS Kind of integrated circuit: inverter |
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SBR2045CTFP-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR® Case: ITO220AB Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Type of diode: rectifying Technology: SBR® Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 45V |
на замовлення 227 шт: термін постачання 14-30 дні (днів) |
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| SBR20A200CTB-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; Ufmax: 960mV; SBR® Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Technology: SBR® Kind of package: reel; tape Max. forward voltage: 0.96V Max. load current: 20A |
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| SBR20U100CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 200A |
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| SBR2045CT-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 120A |
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| SBR2065D1-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 65V; 20A; DPAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 65V Load current: 20A Semiconductor structure: single diode Case: DPAK Technology: SBR® Kind of package: reel; tape |
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| SBR20A120CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 120V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 180A |
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| SBR20U100CTE-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; I2PAK; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: I2PAK Technology: SBR® Kind of package: tube Max. load current: 20A |
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| SBR20U50SLP-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 20A Reverse recovery time: 57ns Semiconductor structure: single diode Case: PowerDI®8 Technology: SBR® Kind of package: reel; tape |
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| SBR20150CT-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 10Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A |
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| SBR20150CTFP | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 150A |
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| SBR2060CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 150A |
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| SBR2060CTFP-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Technology: SBR® Kind of package: tube Max. load current: 20A |
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| SBR20A100CTB-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 10Ax2; D2PAK; Ufmax: 750mV; SBR® Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Technology: SBR® Kind of package: reel; tape Max. forward voltage: 0.75V Max. load current: 20A |
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| SBR20A100CTFP | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 250A |
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| SBR20A100CTFP-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Technology: SBR® Kind of package: tube Max. load current: 20A |
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| SBR20A150CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 180A |
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| SBR20A150CTFP | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 180A |
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| SBR20A200CT-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A |
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| SBR20A200CTB | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO263AB Technology: SBR® Kind of package: tube Max. forward voltage: 0.96V Max. forward impulse current: 180A |
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| SBR20A200CTFP | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: ITO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 180A |
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| SBR20A300CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 180A |
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| SBR20A300CTB-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 10Ax2; 45ns; D2PAK; Ufmax: 920mV; SBR® Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 45ns Semiconductor structure: common cathode; double Case: D2PAK Technology: SBR® Kind of package: reel; tape Max. forward voltage: 0.92V Max. load current: 20A |
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| SBR20A300CTB | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 920mV; SBR® Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: D2PAK Technology: SBR® Kind of package: tube Max. forward voltage: 0.92V Max. load current: 20A |
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| SBR20A300CTFP | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: ITO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 180A |
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| SBR20E100CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 250A |
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| SBR20E120CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 120V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Technology: SBR® Kind of package: tube Max. load current: 20A Max. forward impulse current: 180A |
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| SBR20M150D1Q-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 150V; 20A; 24ns; DPAK; Ufmax: 900mV; SBR® Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 20A Reverse recovery time: 24ns Semiconductor structure: single diode Case: DPAK Technology: SBR® Kind of package: reel; tape Max. forward voltage: 0.9V Application: automotive industry |
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| DMN1008UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 9.8A Pulsed drain current: 60A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 23.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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| DMN1008UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 9.8A Pulsed drain current: 60A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 23.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMN1008UFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 9.8A Pulsed drain current: 60A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 23.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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MMSZ5229B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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| MMSZ5229BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
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BC858BW-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Frequency: 200MHz Current gain: 220...475 Quantity in set/package: 3000pcs. Kind of package: reel; tape |
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BAV99-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Features of semiconductor devices: small signal |
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| BAV99Q-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
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74LVC1G126SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT353 Manufacturer series: LVC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Quiescent current: 200µA |
на замовлення 2833 шт: термін постачання 14-30 дні (днів) |
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74LVC1G34Z-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: CMOS Mounting: SMD Case: SOT553 Manufacturer series: LVC Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Quiescent current: 200µA Kind of output: push-pull |
на замовлення 3698 шт: термін постачання 14-30 дні (днів) |
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APX803L20-26C3-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); SOT323 Mounting: SMD Operating temperature: -40...85°C DC supply current: 1µA Maximum output current: 20mA Delay time: 220ms Supply voltage: 0.9...5.5V DC Number of channels: 1 Threshold on-voltage: 2.63V Integrated circuit features: ±1,5% accuracy Case: SOT323 Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Kind of package: reel; tape Type of integrated circuit: supervisor circuit |
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FZT849TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 7A Power dissipation: 1.6W Case: SOT223 Current gain: 100...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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| AZ1117D-1.2TRE1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.25V Output voltage: 1.2V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: AZ1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
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| AZ1117ID-1.2TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 1.2V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: AZ1117I Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
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|
AZ1117IH-1.2TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: AZ1117I Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
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|
SB3100-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.79V Load current: 3A Max. forward impulse current: 100A Max. off-state voltage: 0.1kV Kind of package: reel Case: DO201AD |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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DMG2307L-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A On-state resistance: 0.134Ω Power dissipation: 0.76W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
на замовлення 1376 шт: термін постачання 14-30 дні (днів) |
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| LM4040C33QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 3.3V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 3.3V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
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DMN2100UDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: SOT26 Polarisation: unipolar On-state resistance: 0.13Ω Power dissipation: 0.6W Drain current: 2.5A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
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| DMN21D2UFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: X1-DFN1006-3 Polarisation: unipolar Gate charge: 930pC On-state resistance: 3Ω Power dissipation: 570mW Drain current: 0.7A Pulsed drain current: 1A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
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| DMN21D2UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: X1-DFN1006-3 Polarisation: unipolar Gate charge: 930pC On-state resistance: 3Ω Power dissipation: 570mW Drain current: 0.7A Pulsed drain current: 1A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
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| DMT6015LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 18.9nC On-state resistance: 22mΩ Power dissipation: 2.2W Drain current: 7.6A Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET |
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| DMT6015LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.5A Pulsed drain current: 60A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±16V On-state resistance: 24mΩ Mounting: SMD Gate charge: 18.9nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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|
DMT6015LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.5A Pulsed drain current: 60A Power dissipation: 2.1W Case: SO8 Gate-source voltage: ±16V On-state resistance: 21mΩ Mounting: SMD Gate charge: 18.9nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| AL5890-10D-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; LED driver; TO252; 10mA; Ch: 1 Operating temperature: -40...105°C Kind of integrated circuit: LED driver Type of integrated circuit: driver Mounting: SMD Kind of package: reel; tape Case: TO252 Topology: single transistor Output current: 10mA Number of channels: 1 Operating voltage: 7...400V DC |
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| AL5890-10P1-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; LED driver; PowerDI®123; 10mA; Ch: 1 Operating temperature: -40...125°C Kind of integrated circuit: LED driver Type of integrated circuit: driver Mounting: SMD Kind of package: reel; tape Case: PowerDI®123 Topology: single transistor Output current: 10mA Number of channels: 1 Operating voltage: 7...400V DC |
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| BAS16HLPQ-7B |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS16HLP-7B |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS16HTWQ-13R |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAS16HTW-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS16HTWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| SB550-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
на замовлення 125 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.70 грн |
| 11+ | 40.46 грн |
| 12+ | 36.48 грн |
| 100+ | 25.65 грн |
| 74AHC05T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
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| SBR2045CTFP-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
на замовлення 227 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.79 грн |
| 10+ | 44.02 грн |
| 13+ | 33.69 грн |
| 50+ | 29.80 грн |
| 100+ | 26.67 грн |
| SBR20A200CTB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; Ufmax: 960mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.96V
Max. load current: 20A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; Ufmax: 960mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.96V
Max. load current: 20A
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| SBR20U100CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 200A
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| SBR2045CT-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 120A
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| SBR2065D1-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 65V; 20A; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 65V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 65V; 20A; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 65V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
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| SBR20A120CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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| SBR20U100CTE-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; I2PAK; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; I2PAK; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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| SBR20U50SLP-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 20A
Reverse recovery time: 57ns
Semiconductor structure: single diode
Case: PowerDI®8
Technology: SBR®
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 20A
Reverse recovery time: 57ns
Semiconductor structure: single diode
Case: PowerDI®8
Technology: SBR®
Kind of package: reel; tape
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| SBR20150CT-G |
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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| SBR20150CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
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| SBR2060CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
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| SBR2060CTFP-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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| SBR20A100CTB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 10Ax2; D2PAK; Ufmax: 750mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.75V
Max. load current: 20A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 10Ax2; D2PAK; Ufmax: 750mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.75V
Max. load current: 20A
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| SBR20A100CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
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| SBR20A100CTFP-G |
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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| SBR20A150CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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| SBR20A150CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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| SBR20A200CT-G |
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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| SBR20A200CTB |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
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| SBR20A200CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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| SBR20A300CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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| SBR20A300CTB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 45ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 45ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.92V
Max. load current: 20A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 45ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 45ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.92V
Max. load current: 20A
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| SBR20A300CTB |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.92V
Max. load current: 20A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.92V
Max. load current: 20A
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| SBR20A300CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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| SBR20E100CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
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| SBR20E120CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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| SBR20M150D1Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 20A; 24ns; DPAK; Ufmax: 900mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A
Reverse recovery time: 24ns
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.9V
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 20A; 24ns; DPAK; Ufmax: 900mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A
Reverse recovery time: 24ns
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.9V
Application: automotive industry
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| DMN1008UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN1008UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN1008UFDFQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| MMSZ5229B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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| MMSZ5229BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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| BC858BW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 220...475
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 220...475
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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| BAV99-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAV99Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| 74LVC1G126SE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
на замовлення 2833 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 118+ | 3.59 грн |
| 141+ | 3.02 грн |
| 250+ | 2.75 грн |
| 74LVC1G34Z-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
на замовлення 3698 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 109+ | 4.19 грн |
| 114+ | 3.72 грн |
| 118+ | 3.59 грн |
| 500+ | 3.39 грн |
| APX803L20-26C3-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Mounting: SMD
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.63V
Integrated circuit features: ±1,5% accuracy
Case: SOT323
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Mounting: SMD
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.63V
Integrated circuit features: ±1,5% accuracy
Case: SOT323
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
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| FZT849TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 7A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 7A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 81 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.63 грн |
| 10+ | 56.55 грн |
| AZ1117D-1.2TRE1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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| AZ1117ID-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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| AZ1117IH-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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| SB3100-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 0.1kV
Kind of package: reel
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 0.1kV
Kind of package: reel
Case: DO201AD
на замовлення 33 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.64 грн |
| 19+ | 22.69 грн |
| DMG2307L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Power dissipation: 0.76W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Power dissipation: 0.76W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1376 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.53 грн |
| 26+ | 16.42 грн |
| 50+ | 11.68 грн |
| 100+ | 10.05 грн |
| 500+ | 7.04 грн |
| 1000+ | 5.96 грн |
| LM4040C33QFTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.26 грн |
| 11+ | 39.19 грн |
| 25+ | 35.89 грн |
| 100+ | 31.74 грн |
| 250+ | 31.32 грн |
| DMN2100UDM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: SOT26
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.6W
Drain current: 2.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: SOT26
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.6W
Drain current: 2.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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| DMN21D2UFB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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| DMN21D2UFB-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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| DMT6015LFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| DMT6015LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMT6015LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| AL5890-10D-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 10mA; Ch: 1
Operating temperature: -40...105°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 10mA; Ch: 1
Operating temperature: -40...105°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
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| AL5890-10P1-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 10mA; Ch: 1
Operating temperature: -40...125°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®123
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 10mA; Ch: 1
Operating temperature: -40...125°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®123
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
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