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BAS16HLPQ-7B DIODES INCORPORATED BAS16HLPQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HLP-7B DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13R DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16HTW-13 DIODES INCORPORATED BAS16HTW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13 DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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SB550-T SB550-T DIODES INCORPORATED SB520_ser.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
9+54.70 грн
11+40.46 грн
12+36.48 грн
100+25.65 грн
Мінімальне замовлення: 9
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74AHC05T14-13 DIODES INCORPORATED 74AHC05.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
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SBR2045CTFP-G SBR2045CTFP-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
9+53.79 грн
10+44.02 грн
13+33.69 грн
50+29.80 грн
100+26.67 грн
Мінімальне замовлення: 9
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SBR20A200CTB-13 DIODES INCORPORATED SBR20A200CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; Ufmax: 960mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.96V
Max. load current: 20A
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SBR20U100CT DIODES INCORPORATED SBR20U100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 200A
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SBR2045CT-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 120A
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SBR2065D1-13 DIODES INCORPORATED SBR2065D1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 65V; 20A; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 65V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
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SBR20A120CT DIODES INCORPORATED SBR20A120.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20U100CTE-G DIODES INCORPORATED SBR20U100CTE.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; I2PAK; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20U50SLP-13 DIODES INCORPORATED SBR20U50SLP.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 20A
Reverse recovery time: 57ns
Semiconductor structure: single diode
Case: PowerDI®8
Technology: SBR®
Kind of package: reel; tape
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SBR20150CT-G DIODES INCORPORATED Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20150CTFP DIODES INCORPORATED SBR20150CT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
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SBR2060CT DIODES INCORPORATED SBR2060.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
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SBR2060CTFP-G DIODES INCORPORATED SBR2060.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20A100CTB-13 DIODES INCORPORATED SBR20A100CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 10Ax2; D2PAK; Ufmax: 750mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.75V
Max. load current: 20A
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SBR20A100CTFP DIODES INCORPORATED SBR20A100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
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SBR20A100CTFP-G DIODES INCORPORATED Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20A150CT DIODES INCORPORATED SBR20A150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A150CTFP DIODES INCORPORATED SBR20A150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A200CT-G DIODES INCORPORATED Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20A200CTB DIODES INCORPORATED SBR20A200CTB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
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SBR20A200CTFP DIODES INCORPORATED SBR20A200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A300CT DIODES INCORPORATED SBR20A300.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A300CTB-13 DIODES INCORPORATED SBR20A300.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 45ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 45ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.92V
Max. load current: 20A
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SBR20A300CTB DIODES INCORPORATED SBR20A300.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.92V
Max. load current: 20A
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SBR20A300CTFP DIODES INCORPORATED SBR20A300.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20E100CT DIODES INCORPORATED SBR20E100CT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
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SBR20E120CT DIODES INCORPORATED SBR20E120CT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20M150D1Q-13 DIODES INCORPORATED SBR20M150D1Q.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 20A; 24ns; DPAK; Ufmax: 900mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A
Reverse recovery time: 24ns
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.9V
Application: automotive industry
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DMN1008UFDF-7 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1008UFDF-13 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN1008UFDFQ-13 DIODES INCORPORATED DMN1008UFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMSZ5229B-7-F MMSZ5229B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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MMSZ5229BQ-7-F DIODES INCORPORATED ds18010.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BC858BW-7-F BC858BW-7-F DIODES INCORPORATED bc856_7_8W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 220...475
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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BAV99-13-F BAV99-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAV99Q-7-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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74LVC1G126SE-7 74LVC1G126SE-7 DIODES INCORPORATED 74LVC1G126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
на замовлення 2833 шт:
термін постачання 14-30 дні (днів)
72+6.38 грн
118+3.59 грн
141+3.02 грн
250+2.75 грн
Мінімальне замовлення: 72
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74LVC1G34Z-7 74LVC1G34Z-7 DIODES INCORPORATED 74LVC1G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
на замовлення 3698 шт:
термін постачання 14-30 дні (днів)
109+4.19 грн
114+3.72 грн
118+3.59 грн
500+3.39 грн
Мінімальне замовлення: 109
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APX803L20-26C3-7 APX803L20-26C3-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Mounting: SMD
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.63V
Integrated circuit features: ±1,5% accuracy
Case: SOT323
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
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FZT849TA FZT849TA DIODES INCORPORATED FZT849.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 7A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
5+96.63 грн
10+56.55 грн
Мінімальне замовлення: 5
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AZ1117D-1.2TRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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AZ1117ID-1.2TRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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AZ1117IH-1.2TRG1 AZ1117IH-1.2TRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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SB3100-T SB3100-T DIODES INCORPORATED SB370_ser.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 0.1kV
Kind of package: reel
Case: DO201AD
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
14+34.64 грн
19+22.69 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMG2307L-7 DMG2307L-7 DIODES INCORPORATED DMG2307L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Power dissipation: 0.76W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1376 шт:
термін постачання 14-30 дні (днів)
18+25.53 грн
26+16.42 грн
50+11.68 грн
100+10.05 грн
500+7.04 грн
1000+5.96 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
LM4040C33QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
8+59.26 грн
11+39.19 грн
25+35.89 грн
100+31.74 грн
250+31.32 грн
Мінімальне замовлення: 8
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DMN2100UDM-7 DMN2100UDM-7 DIODES INCORPORATED DMN2100UDM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: SOT26
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.6W
Drain current: 2.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMN21D2UFB-7 DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance:
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMN21D2UFB-7B DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance:
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMT6015LFV-7 DIODES INCORPORATED DMT6015LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT6015LPS-13 DIODES INCORPORATED DMT6015LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT6015LSS-13 DMT6015LSS-13 DIODES INCORPORATED DMT6015LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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AL5890-10D-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 10mA; Ch: 1
Operating temperature: -40...105°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
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AL5890-10P1-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 10mA; Ch: 1
Operating temperature: -40...125°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®123
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
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BAS16HLPQ-7B BAS16HLPQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HLP-7B
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13R BAS16HTWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16HTW-13 BAS16HTW.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13 BAS16HTWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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SB550-T SB520_ser.pdf
SB550-T
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+54.70 грн
11+40.46 грн
12+36.48 грн
100+25.65 грн
Мінімальне замовлення: 9
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74AHC05T14-13 74AHC05.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
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SBR2045CTFP-G SBR2045.pdf
SBR2045CTFP-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: rectifying
Technology: SBR®
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+53.79 грн
10+44.02 грн
13+33.69 грн
50+29.80 грн
100+26.67 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SBR20A200CTB-13 SBR20A200CTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; Ufmax: 960mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.96V
Max. load current: 20A
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SBR20U100CT SBR20U100.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 200A
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SBR2045CT-G SBR2045.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 120A
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SBR2065D1-13 SBR2065D1.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 65V; 20A; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 65V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
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SBR20A120CT SBR20A120.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20U100CTE-G SBR20U100CTE.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; I2PAK; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20U50SLP-13 SBR20U50SLP.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 20A
Reverse recovery time: 57ns
Semiconductor structure: single diode
Case: PowerDI®8
Technology: SBR®
Kind of package: reel; tape
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SBR20150CT-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20150CTFP SBR20150CT.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
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SBR2060CT SBR2060.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 150A
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SBR2060CTFP-G SBR2060.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20A100CTB-13 SBR20A100CTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 10Ax2; D2PAK; Ufmax: 750mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.75V
Max. load current: 20A
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SBR20A100CTFP SBR20A100.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
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SBR20A100CTFP-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20A150CT SBR20A150.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A150CTFP SBR20A150.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 180A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A200CT-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
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SBR20A200CTB SBR20A200CTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
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SBR20A200CTFP SBR20A200.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A300CT SBR20A300.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20A300CTB-13 SBR20A300.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 45ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 45ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.92V
Max. load current: 20A
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SBR20A300CTB SBR20A300.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 920mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Technology: SBR®
Kind of package: tube
Max. forward voltage: 0.92V
Max. load current: 20A
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SBR20A300CTFP SBR20A300.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 180A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20E100CT SBR20E100CT.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 250A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 250A
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SBR20E120CT SBR20E120CT.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 120V; 10Ax2; tube; Ifsm: 180A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Technology: SBR®
Kind of package: tube
Max. load current: 20A
Max. forward impulse current: 180A
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SBR20M150D1Q-13 SBR20M150D1Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 20A; 24ns; DPAK; Ufmax: 900mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A
Reverse recovery time: 24ns
Semiconductor structure: single diode
Case: DPAK
Technology: SBR®
Kind of package: reel; tape
Max. forward voltage: 0.9V
Application: automotive industry
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DMN1008UFDF-7 DMN1008UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1008UFDF-13 DMN1008UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN1008UFDFQ-13 DMN1008UFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMSZ5229B-7-F mmsz52xxb_Ser.pdf
MMSZ5229B-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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MMSZ5229BQ-7-F ds18010.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BC858BW-7-F bc856_7_8W.pdf
BC858BW-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 220...475
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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BAV99-13-F BAV99.pdf
BAV99-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAV99Q-7-F BAV99.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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74LVC1G126SE-7 74LVC1G126.pdf
74LVC1G126SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
на замовлення 2833 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.38 грн
118+3.59 грн
141+3.02 грн
250+2.75 грн
Мінімальне замовлення: 72
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74LVC1G34Z-7 74LVC1G34.pdf
74LVC1G34Z-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT553
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
на замовлення 3698 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
109+4.19 грн
114+3.72 грн
118+3.59 грн
500+3.39 грн
Мінімальне замовлення: 109
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APX803L20-26C3-7 APX803L.pdf
APX803L20-26C3-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Mounting: SMD
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.63V
Integrated circuit features: ±1,5% accuracy
Case: SOT323
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
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FZT849TA FZT849.pdf
FZT849TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 7A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+96.63 грн
10+56.55 грн
Мінімальне замовлення: 5
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AZ1117D-1.2TRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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AZ1117ID-1.2TRG1 AZ1117I.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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AZ1117IH-1.2TRG1 AZ1117I.pdf
AZ1117IH-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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SB3100-T SB370_ser.pdf
SB3100-T
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 0.1kV
Kind of package: reel
Case: DO201AD
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.64 грн
19+22.69 грн
Мінімальне замовлення: 14
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DMG2307L-7 DMG2307L.pdf
DMG2307L-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Power dissipation: 0.76W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1376 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.53 грн
26+16.42 грн
50+11.68 грн
100+10.05 грн
500+7.04 грн
1000+5.96 грн
Мінімальне замовлення: 18
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LM4040C33QFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+59.26 грн
11+39.19 грн
25+35.89 грн
100+31.74 грн
250+31.32 грн
Мінімальне замовлення: 8
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DMN2100UDM-7 DMN2100UDM.pdf
DMN2100UDM-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: SOT26
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.6W
Drain current: 2.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMN21D2UFB-7 DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance:
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMN21D2UFB-7B DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance:
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMT6015LFV-7 DMT6015LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT6015LPS-13 DMT6015LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT6015LSS-13 DMT6015LSS.pdf
DMT6015LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 18.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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AL5890-10D-13 AL5890.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 10mA; Ch: 1
Operating temperature: -40...105°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
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AL5890-10P1-13 AL5890.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 10mA; Ch: 1
Operating temperature: -40...125°C
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®123
Topology: single transistor
Output current: 10mA
Number of channels: 1
Operating voltage: 7...400V DC
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