Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74497) > Сторінка 1196 з 1242

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DMTH4007SPSQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 2.8W; PowerDI5060-8
Mounting: SMD
Case: PowerDI5060-8
Power dissipation: 2.8W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 100A
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 7.6mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007LK3-13 DMTH4007LK3-13 DIODES INCORPORATED DMTH4007LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 44A
Pulsed drain current: 80A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 29.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH4007LPS-13 DIODES INCORPORATED DMTH4007LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 340A
Power dissipation: 83.3W
Gate charge: 29.1nC
Polarisation: unipolar
Drain current: 85A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 6.5mΩ
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DMTH4007SPD-13 DIODES INCORPORATED DMTH4007SPD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 90A
Power dissipation: 2.6W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 8.6mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007SPS-13 DIODES INCORPORATED DMTH4007SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 200A
Power dissipation: 2.8W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 13.1A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 7.6mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007LPSQ-13 DIODES INCORPORATED DMTH4007LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 340A
Power dissipation: 2.7W
Gate charge: 29.1nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 9.8mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007LK3Q-13 DMTH4007LK3Q-13 DIODES INCORPORATED DMTH4007LK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Case: TO252
Pulsed drain current: 80A
Power dissipation: 2.6W
Gate charge: 29.1nC
Polarisation: unipolar
Drain current: 13.9A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 9.8mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007SPDQ-13 DIODES INCORPORATED DMTH4007SPDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 90A
Power dissipation: 2.6W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 8.6mΩ
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Мінімальне замовлення: 2500 шт
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BZT52C6V2-7-F BZT52C6V2-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 9059 шт:
термін постачання 14-30 дні (днів)
39+11.63 грн
47+8.97 грн
61+6.81 грн
87+4.78 грн
136+3.06 грн
500+2.62 грн
1000+2.45 грн
3000+2.12 грн
6000+1.97 грн
Мінімальне замовлення: 39 шт
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BZT52C6V2LP-7 BZT52C6V2LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Case: X1-DFN1006-2
Mounting: SMD
Tolerance: ±6.5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
5+83.06 грн
Мінімальне замовлення: 5 шт
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BZT52C6V2-13-F BZT52C6V2-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 993 шт:
термін постачання 14-30 дні (днів)
42+10.73 грн
53+7.97 грн
61+6.81 грн
89+4.67 грн
104+4.00 грн
500+2.97 грн
Мінімальне замовлення: 42 шт
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BZT52C6V2Q-7-F BZT52C6V2Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C6V2SQ-7-F BZT52C6V2SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 20 шт
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BZT52C6V2T-7 BZT52C6V2T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C6V2TQ-13-F BZT52C6V2TQ-13-F DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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74AUP1G17FW5-7 DIODES INCORPORATED 74AUP1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X1-DFN1010-6; -40÷150°C; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Family: AUP
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74AUP1G17FZ4-7 DIODES INCORPORATED 74AUP1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Family: AUP
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74AUP1G34FS3-7 DIODES INCORPORATED 74AUP1G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN0808-4; -40÷150°C; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Number of channels: 1
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Technology: CMOS
Kind of input: with Schmitt trigger
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74AUP2G17FW4-7 DIODES INCORPORATED 74AUP2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1010-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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Мінімальне замовлення: 10 шт
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74AUP2G17FZ4-7 DIODES INCORPORATED 74AUP2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP2G34FW3-7 DIODES INCORPORATED 74AUP2G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN0910-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN0910-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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Мінімальне замовлення: 10 шт
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74AUP2G34FZ4-7 DIODES INCORPORATED 74AUP2G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP1G07FZ4-7 DIODES INCORPORATED 74AUP1G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Number of channels: 1
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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Мінімальне замовлення: 5000 шт
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DDZ19-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
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B270-13-F DIODES INCORPORATED ds30021.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 70V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 70V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Max. forward voltage: 0.79V
Leakage current: 2mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SMBJ180A-13-F SMBJ180A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 200...220V
Max. forward impulse current: 2.06A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DFLS220L-7 DFLS220L-7 DIODES INCORPORATED DFLS220L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.42V
Power dissipation: 1.67W
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1mA
Case: PowerDI®123
Capacitance: 75pF
Type of diode: Schottky rectifying
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DMG3414U-7 DMG3414U-7 DIODES INCORPORATED DMG3414U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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D1213A-04S-7 D1213A-04S-7 DIODES INCORPORATED D1213A-04S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; ESD; SOT363; Ch: 4; reel,tape
Number of channels: 4
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 3V
Semiconductor structure: unidirectional
Capacitance: 0.85pF
Type of diode: TVS array
Breakdown voltage: 6V
Version: ESD
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
18+25.94 грн
22+19.77 грн
25+17.19 грн
Мінімальне замовлення: 18 шт
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D1213A-01SO-7 D1213A-01SO-7 DIODES INCORPORATED ds32185.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Capacitance: 1.2pF
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
2+223.61 грн
Мінімальне замовлення: 2 шт
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D1213A-02SR-7 D1213A-02SR-7 DIODES INCORPORATED D1213A-02SR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; ESD; SOT143; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.4W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.85pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-01WS-7 D1213A-01WS-7 DIODES INCORPORATED D1213A-01WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; ESD; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Version: ESD
Semiconductor structure: unidirectional
Application: Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-04TS-7 D1213A-04TS-7 DIODES INCORPORATED D1213A-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
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D1213A-01LP4-7B DIODES INCORPORATED D1213A-01LP4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-02S-7 DIODES INCORPORATED D1213A-02S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Number of channels: 2
Mounting: SMD
Case: SC70; SOT353
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1.2pF
Type of diode: TVS array
Breakdown voltage: 6V
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D1213A-04SO-7 DIODES INCORPORATED ds32144.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23-6
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LP-7B DIODES INCORPORATED D1213A-01LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-02SM-7 DIODES INCORPORATED D1213A-02SM.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT25
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LPQ-7B DIODES INCORPORATED D1213A-01LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-01W-7 DIODES INCORPORATED D1213A-01W.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01WSQ-7 DIODES INCORPORATED D1213A-01WSQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Semiconductor structure: unidirectional
Application: automotive industry; Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-02SO-7 DIODES INCORPORATED D1213A-02SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02WL-7 DIODES INCORPORATED D1213A_02WL.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04MR-13 DIODES INCORPORATED D1213A-04MR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: MSOP10
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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DMN601K-7 DMN601K-7 DIODES INCORPORATED DMN601K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 403 шт:
термін постачання 14-30 дні (днів)
84+5.37 грн
107+3.90 грн
139+3.01 грн
Мінімальне замовлення: 84 шт
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SMCJ18CA-13-F SMCJ18CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ18CAQ-13-F SMCJ18CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMAZ5V1-13-F SMAZ5V1-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
13+36.67 грн
19+22.18 грн
25+18.19 грн
50+15.78 грн
Мінімальне замовлення: 13 шт
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DFLZ5V1-7 DFLZ5V1-7 DIODES INCORPORATED DFLZ-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: PowerDI®123
Semiconductor structure: single diode
Kind of package: reel; tape
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DMMT3906W-7-f DMMT3906W-7-f DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: PNP x2
Current gain: 100...300
Case: SOT363
Frequency: 250MHz
Collector current: 0.2A
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
12+37.57 грн
22+19.27 грн
Мінімальне замовлення: 12 шт
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DMMT3906-7-F DMMT3906-7-F DIODES INCORPORATED DMMT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 3000pcs.
Semiconductor structure: common base
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DMMT3906WQ-7-F DMMT3906WQ-7-F DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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HDS10M-13 DIODES INCORPORATED HDS10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; HDS
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 1A
Kind of package: reel; tape
Case: HDS
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
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BAS20-7-F BAS20-7-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAS20Q-13-F BAS20Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DW-7 BAS20DW-7 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DWQ-13 BAS20DWQ-13 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAS20W-7-F BAS20W-7-F DIODES INCORPORATED BAS19W-BAS21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAS70W-7-F BAS70W-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-05Q-7-F BAS70W-05Q-7-F DIODES INCORPORATED BAS70WQ_-04Q_-05Q_-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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DMTH4007SPSQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 2.8W; PowerDI5060-8
Mounting: SMD
Case: PowerDI5060-8
Power dissipation: 2.8W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 100A
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 7.6mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007LK3-13 DMTH4007LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 44A
Pulsed drain current: 80A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 29.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH4007LPS-13 DMTH4007LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 340A
Power dissipation: 83.3W
Gate charge: 29.1nC
Polarisation: unipolar
Drain current: 85A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 6.5mΩ
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DMTH4007SPD-13 DMTH4007SPD.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 90A
Power dissipation: 2.6W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 8.6mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007SPS-13 DMTH4007SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 200A
Power dissipation: 2.8W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 13.1A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 7.6mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007LPSQ-13 DMTH4007LPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 340A
Power dissipation: 2.7W
Gate charge: 29.1nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 9.8mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007LK3Q-13 DMTH4007LK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Case: TO252
Pulsed drain current: 80A
Power dissipation: 2.6W
Gate charge: 29.1nC
Polarisation: unipolar
Drain current: 13.9A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 9.8mΩ
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Мінімальне замовлення: 2500 шт
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DMTH4007SPDQ-13 DMTH4007SPDQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 90A
Power dissipation: 2.6W
Gate charge: 41.9nC
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
On-state resistance: 8.6mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
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BZT52C6V2-7-F BZT52Cxx_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 9059 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.63 грн
47+8.97 грн
61+6.81 грн
87+4.78 грн
136+3.06 грн
500+2.62 грн
1000+2.45 грн
3000+2.12 грн
6000+1.97 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
BZT52C6V2LP-7 BZT52CxxLP_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Case: X1-DFN1006-2
Mounting: SMD
Tolerance: ±6.5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+83.06 грн
Мінімальне замовлення: 5 шт
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BZT52C6V2-13-F BZT52Cxx_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 993 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.73 грн
53+7.97 грн
61+6.81 грн
89+4.67 грн
104+4.00 грн
500+2.97 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
BZT52C6V2Q-7-F ds18004.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C6V2SQ-7-F BZT52CxxS_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 20 шт
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BZT52C6V2T-7 BZT52CxxT_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C6V2TQ-13-F BZT52CxxT_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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74AUP1G17FW5-7 74AUP1G17.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X1-DFN1010-6; -40÷150°C; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Family: AUP
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74AUP1G17FZ4-7 74AUP1G17.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Family: AUP
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74AUP1G34FS3-7 74AUP1G34.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN0808-4; -40÷150°C; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Number of channels: 1
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Technology: CMOS
Kind of input: with Schmitt trigger
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74AUP2G17FW4-7 74AUP2G17.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1010-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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Мінімальне замовлення: 10 шт
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74AUP2G17FZ4-7 74AUP2G17.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP2G34FW3-7 74AUP2G34.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN0910-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN0910-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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Мінімальне замовлення: 10 шт
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74AUP2G34FZ4-7 74AUP2G34.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP1G07FZ4-7 74AUP1G07.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Number of channels: 1
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
DDZ19-7 DDZ5V1B-DDZ43.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
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B270-13-F ds30021.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 70V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 70V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Max. forward voltage: 0.79V
Leakage current: 2mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SMBJ180A-13-F ds19002.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 200...220V
Max. forward impulse current: 2.06A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DFLS220L-7 DFLS220L.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.42V
Power dissipation: 1.67W
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1mA
Case: PowerDI®123
Capacitance: 75pF
Type of diode: Schottky rectifying
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DMG3414U-7 DMG3414U.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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D1213A-04S-7 D1213A-04S.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; ESD; SOT363; Ch: 4; reel,tape
Number of channels: 4
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 3V
Semiconductor structure: unidirectional
Capacitance: 0.85pF
Type of diode: TVS array
Breakdown voltage: 6V
Version: ESD
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+25.94 грн
22+19.77 грн
25+17.19 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
D1213A-01SO-7 ds32185.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Capacitance: 1.2pF
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+223.61 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
D1213A-02SR-7 D1213A-02SR.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; ESD; SOT143; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.4W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.85pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-01WS-7 D1213A-01WS.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; ESD; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Version: ESD
Semiconductor structure: unidirectional
Application: Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-04TS-7 D1213A-04TS.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
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D1213A-01LP4-7B D1213A-01LP4.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-02S-7 D1213A-02S.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Number of channels: 2
Mounting: SMD
Case: SC70; SOT353
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1.2pF
Type of diode: TVS array
Breakdown voltage: 6V
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D1213A-04SO-7 ds32144.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23-6
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LP-7B D1213A-01LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-02SM-7 D1213A-02SM.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT25
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LPQ-7B D1213A-01LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Application: automotive industry
Kind of package: reel; tape
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D1213A-01W-7 D1213A-01W.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01WSQ-7 D1213A-01WSQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Semiconductor structure: unidirectional
Application: automotive industry; Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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Мінімальне замовлення: 3000 шт
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D1213A-02SO-7 D1213A-02SO.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02WL-7 D1213A_02WL.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04MR-13 D1213A-04MR.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: MSOP10
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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DMN601K-7 DMN601K.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 403 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
84+5.37 грн
107+3.90 грн
139+3.01 грн
Мінімальне замовлення: 84 шт
В кошику  од. на суму  грн.
SMCJ18CA-13-F SMCJ_ser.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ18CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMAZ5V1-13-F SMAZx-13-F.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+36.67 грн
19+22.18 грн
25+18.19 грн
50+15.78 грн
Мінімальне замовлення: 13 шт
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DFLZ5V1-7 DFLZ-ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: PowerDI®123
Semiconductor structure: single diode
Kind of package: reel; tape
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DMMT3906W-7-f DMMT3906W.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: PNP x2
Current gain: 100...300
Case: SOT363
Frequency: 250MHz
Collector current: 0.2A
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+37.57 грн
22+19.27 грн
Мінімальне замовлення: 12 шт
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DMMT3906-7-F DMMT3906.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 3000pcs.
Semiconductor structure: common base
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DMMT3906WQ-7-F DMMT3906W.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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HDS10M-13 HDS10M.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; HDS
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 1A
Kind of package: reel; tape
Case: HDS
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
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BAS20-7-F Ds12004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAS20Q-13-F Ds12004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DW-7 Ds30617.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DWQ-13 Ds30617.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAS20W-7-F BAS19W-BAS21W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAS70W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-05Q-7-F BAS70WQ_-04Q_-05Q_-06Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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