Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74093) > Сторінка 1197 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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BAS20Q-13-F | DIODES INCORPORATED |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.625A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS20DW-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.625A Reverse recovery time: 50ns Semiconductor structure: double independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS20DWQ-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: double independent Features of semiconductor devices: small signal Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS20W-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT323 Max. forward voltage: 1.25V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS70W-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS70W-05Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.1A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF Application: automotive industry Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS70W-04Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.1A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF Application: automotive industry Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS70W-06-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.1A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BAS70W-06Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.1A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF Application: automotive industry Reverse recovery time: 5ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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BAS70WQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.1A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF Application: automotive industry Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ13A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 27.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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| QSG0115UDJ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT963; SMD; 15V; 0.1A; 5ns; reel,tape Case: SOT963 Mounting: SMD Semiconductor structure: common cathode; double x2 Type of diode: Schottky switching Capacitance: 8pF Reverse recovery time: 5ns Leakage current: 0.1mA Load current: 0.1A Power dissipation: 0.26W Max. forward voltage: 0.4V Max. forward impulse current: 2A Max. off-state voltage: 15V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMG7401SFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10.8A Pulsed drain current: -80A Power dissipation: 1.3W Case: PowerDI3333-8 Gate-source voltage: ±25V On-state resistance: 25mΩ Mounting: SMD Gate charge: 58nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS40LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X1-DFN1006-2; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky switching Case: X1-DFN1006-2 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54JW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double independent Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ9.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 10÷11.5V; 39A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10...11.5V Max. forward impulse current: 39A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 10µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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D24V0L1B2LP-7B | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 26V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 26V Semiconductor structure: bidirectional Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Case: DFN1006-2 |
на замовлення 9888 шт: термін постачання 14-30 дні (днів) |
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D24V0S1U2TQ-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 27V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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D5V0P1B2LP-7B | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape |
на замовлення 7550 шт: термін постачання 14-30 дні (днів) |
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SMCJ9.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 10÷11.1V; 97.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 97.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 605 шт: термін постачання 14-30 дні (днів) |
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SMAJ9.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDMK0340L-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Capacitance: 2pF Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.2A Kind of package: reel; tape Power dissipation: 0.16W |
на замовлення 2814 шт: термін постачання 14-30 дні (днів) |
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| AP64060WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD Topology: buck Mounting: SMD Input voltage: 4.5...40V DC Output current: 0.6A Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: 0.8...26V DC Kind of package: reel; tape Case: TSOT26 Kind of integrated circuit: DC/DC converter Frequency: 2.2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| D3Z8V2BF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 8.2V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 8.2V Mounting: SMD Tolerance: ±4% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZXMN6A25GTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.7A Power dissipation: 2W Case: SOT223 On-state resistance: 50mΩ Mounting: SMD Gate charge: 11nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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GBU608 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZXTN25012EZTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 6.5A Case: SOT89 Current gain: 30...1500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 260MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ZXTN25012EFLTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2A Case: SOT23 Mounting: SMD Frequency: 260MHz Pulsed collector current: 12A Power dissipation: 0.35W |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| 74AHC32S14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Technology: CMOS Case: SO14 Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: OR Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Operating temperature: -40...150°C Number of inputs: 2 Supply voltage: 2...5.5V DC Family: AHC |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||
| 74AHC32T14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Technology: CMOS Case: TSSOP14 Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: OR Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Operating temperature: -40...150°C Number of inputs: 2 Supply voltage: 2...5.5V DC Family: AHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| KBP406G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 130A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZT52C3V6LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5.5% Case: X1-DFN1006-2 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZT52C3V6Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.6V Mounting: SMD Tolerance: ±6% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G97DW-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOT363 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74LVC1G97FW4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||
| 74LVC1G97FZ4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LVC1G97W6-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOT26 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ12CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3036SSD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -8.5A Gate charge: 16.5nC On-state resistance: 29mΩ Power dissipation: 1.1W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DMP3028LSD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8 Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: -30A Power dissipation: 1.1W Gate charge: 22nC Polarisation: unipolar Drain current: -5.8A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 38mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3048LSD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -35A Drain-source voltage: -30V Drain current: -3.8A Gate charge: 29.6nC On-state resistance: 80mΩ Power dissipation: 1.7W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3056LSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Pulsed drain current: -24A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 13.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| ZXT951KTC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 4.2W Case: TO252-3 Mounting: SMD Frequency: 120MHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
 |
AS324MTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: 4 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 2mV Kind of package: reel; tape Power dissipation: 0.8W Voltage supply range: 3...36V DC |
на замовлення 268 шт: термін постачання 14-30 дні (днів) |
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DMP3028LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252 Mounting: SMD Pulsed drain current: -40A Power dissipation: 1.6W Polarisation: unipolar Drain current: -22A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: TO252 On-state resistance: 25mΩ |
на замовлення 1396 шт: термін постачання 14-30 дні (днів) |
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DMP3008SFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8 Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.1A Gate-source voltage: ±20V On-state resistance: 25mΩ Power dissipation: 0.9W Kind of package: 7 inch reel; tape Application: automotive industry Case: PowerDI®3333-8 Kind of channel: enhancement |
на замовлення 3220 шт: термін постачання 14-30 дні (днів) |
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SDT20A120CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 120V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward voltage: 0.79V Max. forward impulse current: 150A |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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| DT2042-04TS-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Case: TSOT26 Kind of package: reel; tape Application: HDMI Leakage current: 1µA Capacitance: 1.5pF Number of channels: 4 Breakdown voltage: 6V Max. forward impulse current: 10A |
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В кошику од. на суму грн. | |||||||||||||||||
 |
DT2042-04SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Case: SOT23-6 Kind of package: reel; tape Leakage current: 1µA Capacitance: 1.5pF Number of channels: 4 Breakdown voltage: 6V Max. forward impulse current: 10A |
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В кошику од. на суму грн. | ||||||||||||||||
 |
SDT20B100D1-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 20A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward voltage: 0.82V Leakage current: 16mA Max. forward impulse current: 100A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SDT20A100CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward voltage: 0.67V Leakage current: 20mA Max. forward impulse current: 200A |
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В кошику од. на суму грн. | ||||||||||||||||
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DMN2053U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Pulsed drain current: 22A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||
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DMMT5551S-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.2A Power dissipation: 0.3W Case: SOT26 Current gain: 50...250 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...300MHz |
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В кошику од. на суму грн. | ||||||||||||||||
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AP7313-15SAG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD Manufacturer series: AP7313 Operating temperature: -40...85°C Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 2...6V Output current: 0.15A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Output voltage: 1.5V Kind of package: reel; tape Case: SOT23 Number of channels: 1 Tolerance: ±2% |
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В кошику од. на суму грн. | ||||||||||||||||
| ZXRE160FT4-7 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: SMD Case: DFN1520-6 Operating temperature: -40...125°C Operating voltage: 0.6...18V Kind of package: reel; tape Maximum output current: 15mA |
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В кошику од. на суму грн. | |||||||||||||||||
| ZXRE160AH5TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; ±0.5%; SC70-5 Type of integrated circuit: voltage reference source Tolerance: ±0.5% Mounting: SMD Case: SC70-5 Operating temperature: -40...125°C |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| ZXRE160ET5TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; ±1%; SOT25 Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: SMD Case: SOT25 Operating temperature: -40...125°C |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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| MMBZ5257B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||||||||
| MMBZ5257BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| MMBZ5257BT-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT523 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| BAS20Q-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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од. на суму грн.
| BAS20DW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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| BAS20DWQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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| BAS20W-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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В кошику
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| BAS70W-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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| BAS70W-05Q-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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| BAS70W-04Q-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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| BAS70W-06-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Reverse recovery time: 5ns
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| BAS70W-06Q-7-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS70WQ-7-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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| SMBJ13A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 26.24 грн |
| QSG0115UDJ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT963; SMD; 15V; 0.1A; 5ns; reel,tape
Case: SOT963
Mounting: SMD
Semiconductor structure: common cathode; double x2
Type of diode: Schottky switching
Capacitance: 8pF
Reverse recovery time: 5ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 0.4V
Max. forward impulse current: 2A
Max. off-state voltage: 15V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT963; SMD; 15V; 0.1A; 5ns; reel,tape
Case: SOT963
Mounting: SMD
Semiconductor structure: common cathode; double x2
Type of diode: Schottky switching
Capacitance: 8pF
Reverse recovery time: 5ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 0.4V
Max. forward impulse current: 2A
Max. off-state voltage: 15V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| DMG7401SFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10.8A
Pulsed drain current: -80A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10.8A
Pulsed drain current: -80A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| BAS40LP-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
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| BAT54JW-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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| SMBJ9.0CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.5V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.5V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| D24V0L1B2LP-7B |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
на замовлення 9888 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.59 грн |
| 44+ | 9.82 грн |
| 54+ | 7.87 грн |
| 73+ | 5.84 грн |
| 100+ | 4.99 грн |
| D24V0S1U2TQ-7 |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.32 грн |
| 31+ | 13.88 грн |
| 35+ | 12.36 грн |
| 42+ | 10.23 грн |
| 100+ | 7.48 грн |
| 500+ | 5.73 грн |
| 1000+ | 5.56 грн |
| 3000+ | 5.29 грн |
| D5V0P1B2LP-7B |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
на замовлення 7550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 66+ | 6.43 грн |
| 76+ | 5.59 грн |
| 127+ | 3.34 грн |
| 500+ | 2.51 грн |
| 1000+ | 2.43 грн |
| 2000+ | 2.34 грн |
| 5000+ | 2.24 грн |
| SMCJ9.0CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 10÷11.1V; 97.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 97.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 10÷11.1V; 97.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 97.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.64 грн |
| 17+ | 26.24 грн |
| SMAJ9.0CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SDMK0340L-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
на замовлення 2814 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.12 грн |
| 59+ | 7.28 грн |
| 63+ | 6.77 грн |
| 100+ | 5.06 грн |
| 500+ | 4.33 грн |
| AP64060WU-7 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Topology: buck
Mounting: SMD
Input voltage: 4.5...40V DC
Output current: 0.6A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...26V DC
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: DC/DC converter
Frequency: 2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Topology: buck
Mounting: SMD
Input voltage: 4.5...40V DC
Output current: 0.6A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...26V DC
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: DC/DC converter
Frequency: 2.2MHz
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| D3Z8V2BF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
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| ZXMN6A25GTA |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.7A
Power dissipation: 2W
Case: SOT223
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.7A
Power dissipation: 2W
Case: SOT223
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
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Мінімальне замовлення: 1000 шт
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| GBU608 |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| ZXTN25012EZTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
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| ZXTN25012EFLTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2A
Case: SOT23
Mounting: SMD
Frequency: 260MHz
Pulsed collector current: 12A
Power dissipation: 0.35W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2A
Case: SOT23
Mounting: SMD
Frequency: 260MHz
Pulsed collector current: 12A
Power dissipation: 0.35W
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Мінімальне замовлення: 3000 шт
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| 74AHC32S14-13 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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Мінімальне замовлення: 5 шт
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| 74AHC32T14-13 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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| KBP406G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| BZT52C3V6LP-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZT52C3V6Q-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| 74LVC1G97DW-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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| 74LVC1G97FW4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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Мінімальне замовлення: 5 шт
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| 74LVC1G97FZ4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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| 74LVC1G97W6-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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| SMAJ12CAQ-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| DMP3036SSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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| DMP3028LSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -30A
Power dissipation: 1.1W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -30A
Power dissipation: 1.1W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 38mΩ
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| DMP3048LSD-13 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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| DMP3056LSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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Мінімальне замовлення: 2500 шт
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| ZXT951KTC |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
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Мінімальне замовлення: 2500 шт
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| AS324MTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.93 грн |
| 16+ | 27.43 грн |
| 20+ | 21.76 грн |
| 100+ | 10.33 грн |
| DMP3028LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -22A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252
On-state resistance: 25mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -22A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252
On-state resistance: 25mΩ
на замовлення 1396 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.28 грн |
| 11+ | 39.62 грн |
| 100+ | 25.82 грн |
| 500+ | 19.98 грн |
| 1000+ | 18.12 грн |
| DMP3008SFGQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
на замовлення 3220 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 100.28 грн |
| 10+ | 59.09 грн |
| 100+ | 43.51 грн |
| 500+ | 38.18 грн |
| SDT20A120CT |
|
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.05 грн |
| 12+ | 35.64 грн |
| DT2042-04TS-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Application: HDMI
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Application: HDMI
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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| DT2042-04SO-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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| SDT20B100D1-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.82V
Leakage current: 16mA
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.82V
Leakage current: 16mA
Max. forward impulse current: 100A
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Мінімальне замовлення: 2500 шт
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| SDT20A100CT |
|
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.67V
Leakage current: 20mA
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.67V
Leakage current: 20mA
Max. forward impulse current: 200A
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| DMN2053U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMMT5551S-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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| AP7313-15SAG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
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| ZXRE160FT4-7 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
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| ZXRE160AH5TA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 27.17 грн |
| ZXRE160ET5TA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.07 грн |
| MMBZ5257B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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| MMBZ5257BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5257BT-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.