Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 1197 з 1212
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BCP55TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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BAS40-06Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS40-06Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS40-06T-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMP2200UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W Pulsed drain current: -8A Drain current: -1.2A Gate charge: 2.2nC Kind of package: 7 inch reel; tape On-state resistance: 0.65Ω Power dissipation: 1.58W Gate-source voltage: ±8V Kind of channel: enhancement Type of transistor: P-MOSFET Case: U-DFN1616-6 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAZ18-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Zener current: 56mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 4195 шт: термін постачання 21-30 дні (днів) |
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ZXMS6004FFQTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC |
на замовлення 5587 шт: термін постачання 21-30 дні (днів) |
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GBU1010 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BC857BLP-7B | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMC4029SK4-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 6.7/-4.9A Power dissipation: 1.6W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.032/0.055Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 2485 шт: термін постачання 21-30 дні (днів) |
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AL5810QD-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; DPAK,TO252; 200mA; Ch: 1; 2÷60VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: DPAK; TO252 Output current: 0.2A Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2...60V DC Kind of package: reel; tape |
на замовлення 2386 шт: термін постачання 21-30 дні (днів) |
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| AL5810FJ3-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; W-DFN2020-3; 200mA; Ch: 1; 2÷60VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: W-DFN2020-3 Output current: 0.2A Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AL5810QFJ3-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; W-DFN2020-3; 200mA; Ch: 1; 2÷60VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: W-DFN2020-3 Output current: 0.2A Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DPC817S-B-TR | DIODES INCORPORATED |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Collector-emitter voltage: 35V Case: SMD4 Max. off-state voltage: 6V Number of pins: 4 |
на замовлення 2996000 шт: термін постачання 21-30 дні (днів) |
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SMAJ120A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward impulse current: 2A |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
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SMAJ120CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward impulse current: 2A |
на замовлення 1805 шт: термін постачання 21-30 дні (днів) |
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AP2411SN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2020-6 On-state resistance: 70mΩ Supply voltage: 2.7...5.5V DC Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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AP2114H-1.8TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2114H-1.2TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2114HA-1.2TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2114HA-1.8TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2114H-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG2305UXQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG2305UX-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG2305UXQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ22CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2994 шт: термін постачання 21-30 дні (днів) |
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SMBJ22A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| P4SMAJ6.0ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 0.4mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Case: SO8 Drain-source voltage: -60V Pulsed drain current: -32A Drain current: -3.9A On-state resistance: 55mΩ Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 2826 шт: термін постачання 21-30 дні (днів) |
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DMPH6050SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: TO252 Drain-source voltage: -60V Pulsed drain current: -40A Drain current: -6A Gate charge: 25nC On-state resistance: 70mΩ Power dissipation: 3.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 1853 шт: термін постачання 21-30 дні (днів) |
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BCW68HTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5037 шт: термін постачання 21-30 дні (днів) |
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BAT54-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.2W Max. forward impulse current: 0.6A |
на замовлення 6700 шт: термін постачання 21-30 дні (днів) |
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BAS70DW-04-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double x2 Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF Max. forward impulse current: 0.1A |
на замовлення 2120 шт: термін постачання 21-30 дні (днів) |
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| 74AHC1G04SE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHC Kind of output: push-pull Kind of input: with Schmitt trigger Number of inputs: 1 Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AHC1G04W5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHC Kind of output: push-pull Kind of input: with Schmitt trigger Number of inputs: 1 Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB3100-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.79V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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ZVN4206GTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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| AP7375Q-50SP-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SO8-EP; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output current: 0.35A Voltage drop: 1.2V Output voltage: 5V Input voltage: 3...45V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7375Q Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP6023LEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMG3415UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A On-state resistance: 71mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Version: ESD Application: automotive industry |
на замовлення 703 шт: термін постачання 21-30 дні (днів) |
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BC847BVC-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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MMSZ5250BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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| SMBJ24CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||||
| SMBJ24CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2411MP-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: MSOP8EP On-state resistance: 70mΩ Supply voltage: 2.7...5.5V DC Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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BAT40V-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double independent Case: SOT563 Max. forward voltage: 0.33V Max. forward impulse current: 0.75A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.15W |
на замовлення 780 шт: термін постачання 21-30 дні (днів) |
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| ADTA124ECAQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Power dissipation: 0.31W Frequency: 250MHz Quantity in set/package: 10000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DDTA124ECA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DDTA124EE-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT523 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.15W Frequency: 250MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDTA124EUA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
ZVP2106A | DIODES INCORPORATED |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.28A; Idm: -4A; 0.7W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.28A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Pulsed drain current: -4A |
на замовлення 3243 шт: термін постачання 21-30 дні (днів) |
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DMG3414U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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BZT52C8V2-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 7637 шт: термін постачання 21-30 дні (днів) |
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| DMN3060LVT-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; 30V; TSOT23-6 Mounting: SMD Case: TSOT23-6 Type of transistor: N-MOSFET x2 Gate charge: 11.3nC Drain-source voltage: 30V |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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SMAJ54CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FMMT459QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 0.15A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 0.5A Current gain: 50...120 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS7815ADTR-G1 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; AS78XXA Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Output current: 1A Voltage drop: 2V Tolerance: ±4% Output voltage: 15V Input voltage: 17.9...30V Manufacturer series: AS78XXA Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDZ30ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode Power dissipation: 0.5W Zener voltage: 30V Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SD103CW-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; 10ns; reel,tape Mounting: SMD Capacitance: 28pF Reverse recovery time: 10ns Load current: 0.35A Power dissipation: 367mW Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Max. off-state voltage: 20V Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SD103CWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape Mounting: SMD Load current: 0.35A Power dissipation: 0.2W Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Max. off-state voltage: 20V Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. |
| BCP55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 32+ | 13.13 грн |
| BAS40-06Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BAS40-06Q-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
товару немає в наявності
В кошику
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| BAS40-06T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
товару немає в наявності
В кошику
од. на суму грн.
| DMP2200UFCL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
Kind of package: 7 inch reel; tape
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN1616-6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
Kind of package: 7 inch reel; tape
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN1616-6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
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В кошику
од. на суму грн.
| SMAZ18-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 56mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 56mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 4195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.35 грн |
| 30+ | 14.21 грн |
| 50+ | 10.41 грн |
| 100+ | 9.08 грн |
| 250+ | 7.68 грн |
| 500+ | 6.77 грн |
| 1000+ | 5.95 грн |
| ZXMS6004FFQTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
на замовлення 5587 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.83 грн |
| 10+ | 57.40 грн |
| 25+ | 47.82 грн |
| 50+ | 41.46 грн |
| 100+ | 36.09 грн |
| 250+ | 30.56 грн |
| 500+ | 27.91 грн |
| GBU1010 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| BC857BLP-7B |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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В кошику
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| DMC4029SK4-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.7/-4.9A
Power dissipation: 1.6W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.032/0.055Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.7/-4.9A
Power dissipation: 1.6W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.032/0.055Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 2485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.92 грн |
| 12+ | 36.50 грн |
| 50+ | 28.00 грн |
| 100+ | 24.78 грн |
| 500+ | 19.16 грн |
| 1000+ | 17.34 грн |
| AL5810QD-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; DPAK,TO252; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DPAK; TO252
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; DPAK,TO252; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DPAK; TO252
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
на замовлення 2386 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.14 грн |
| 13+ | 34.36 грн |
| 25+ | 31.22 грн |
| 100+ | 28.66 грн |
| 250+ | 26.10 грн |
| 1000+ | 24.36 грн |
| AL5810FJ3-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; W-DFN2020-3; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: W-DFN2020-3
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; W-DFN2020-3; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: W-DFN2020-3
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
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В кошику
од. на суму грн.
| AL5810QFJ3-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; W-DFN2020-3; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: W-DFN2020-3
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; W-DFN2020-3; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: W-DFN2020-3
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
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| DPC817S-B-TR |
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Виробник: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 35V
Case: SMD4
Max. off-state voltage: 6V
Number of pins: 4
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 35V
Case: SMD4
Max. off-state voltage: 6V
Number of pins: 4
на замовлення 2996000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.00 грн |
| SMAJ120A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2A
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.79 грн |
| 31+ | 13.71 грн |
| 35+ | 11.89 грн |
| 100+ | 6.73 грн |
| 500+ | 4.67 грн |
| 1000+ | 4.44 грн |
| SMAJ120CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2A
на замовлення 1805 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.23 грн |
| 39+ | 10.74 грн |
| 44+ | 9.42 грн |
| 100+ | 5.86 грн |
| 250+ | 5.12 грн |
| 500+ | 4.79 грн |
| 1000+ | 4.62 грн |
| AP2411SN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.46 грн |
| 27+ | 15.36 грн |
| 31+ | 13.63 грн |
| 35+ | 11.89 грн |
| 100+ | 9.83 грн |
| 250+ | 9.17 грн |
| AP2114H-1.8TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2114H-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2114HA-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2114HA-1.8TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2114H-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| DMG2305UXQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMG2305UX-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMG2305UXQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| SMBJ22CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.79 грн |
| 31+ | 13.71 грн |
| 35+ | 11.89 грн |
| 100+ | 7.27 грн |
| 500+ | 6.03 грн |
| SMBJ22A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| P4SMAJ6.0ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DMP6050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2826 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.81 грн |
| 12+ | 36.75 грн |
| 25+ | 32.04 грн |
| 100+ | 26.18 грн |
| 250+ | 23.79 грн |
| DMPH6050SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 1853 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.81 грн |
| 11+ | 38.73 грн |
| 50+ | 28.41 грн |
| 100+ | 25.11 грн |
| 250+ | 21.47 грн |
| 500+ | 19.90 грн |
| BCW68HTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5037 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.68 грн |
| 29+ | 14.54 грн |
| 33+ | 12.80 грн |
| 100+ | 7.89 грн |
| 500+ | 5.81 грн |
| 1000+ | 5.19 грн |
| 3000+ | 4.71 грн |
| BAT54-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
на замовлення 6700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.34 грн |
| 93+ | 4.46 грн |
| 151+ | 2.75 грн |
| 500+ | 1.66 грн |
| 1000+ | 1.36 грн |
| 1500+ | 1.26 грн |
| 3000+ | 1.10 грн |
| 6000+ | 1.07 грн |
| BAS70DW-04-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
на замовлення 2120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.90 грн |
| 34+ | 12.39 грн |
| 39+ | 10.65 грн |
| 48+ | 8.75 грн |
| 100+ | 6.69 грн |
| 500+ | 5.29 грн |
| 1000+ | 4.87 грн |
| 74AHC1G04SE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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| 74AHC1G04W5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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| SB3100-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.91 грн |
| 18+ | 23.70 грн |
| 20+ | 22.38 грн |
| 100+ | 19.49 грн |
| ZVN4206GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.83 грн |
| 10+ | 51.37 грн |
| 50+ | 39.89 грн |
| 100+ | 35.84 грн |
| 250+ | 31.05 грн |
| 500+ | 27.83 грн |
| AP7375Q-50SP-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 5V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 5V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
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| DMP6023LEQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMG3415UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 71mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 71mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Version: ESD
Application: automotive industry
на замовлення 703 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.24 грн |
| 15+ | 29.24 грн |
| 17+ | 25.77 грн |
| 100+ | 16.10 грн |
| 500+ | 11.81 грн |
| BC847BVC-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.24 грн |
| 21+ | 20.07 грн |
| 100+ | 11.34 грн |
| 500+ | 7.92 грн |
| 1000+ | 6.85 грн |
| MMSZ5250BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 170+ | 2.62 грн |
| 295+ | 1.40 грн |
| 500+ | 1.23 грн |
| SMBJ24CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ24CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| AP2411MP-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8EP
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8EP
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.35 грн |
| 30+ | 14.12 грн |
| 34+ | 12.31 грн |
| 100+ | 9.99 грн |
| 250+ | 9.83 грн |
| BAT40V-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 0.33V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 0.33V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.15W
на замовлення 780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 43+ | 9.75 грн |
| 47+ | 8.92 грн |
| 100+ | 6.40 грн |
| 500+ | 5.00 грн |
| ADTA124ECAQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.31W
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.31W
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Application: automotive industry
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| DDTA124ECA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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| DDTA124EE-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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| DDTA124EUA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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| ZVP2106A |
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Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.28A; Idm: -4A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.28A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: -4A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.28A; Idm: -4A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.28A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: -4A
на замовлення 3243 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.59 грн |
| 10+ | 47.32 грн |
| 40+ | 40.14 грн |
| 100+ | 35.51 грн |
| 200+ | 32.37 грн |
| 250+ | 31.30 грн |
| 500+ | 28.41 грн |
| 1000+ | 27.91 грн |
| DMG3414U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.58 грн |
| 18+ | 23.70 грн |
| 25+ | 18.42 грн |
| 100+ | 12.64 грн |
| 150+ | 11.64 грн |
| BZT52C8V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 7637 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.12 грн |
| 84+ | 4.96 грн |
| 107+ | 3.87 грн |
| 161+ | 2.58 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.45 грн |
| 3000+ | 1.40 грн |
| DMN3060LVT-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 30V; TSOT23-6
Mounting: SMD
Case: TSOT23-6
Type of transistor: N-MOSFET x2
Gate charge: 11.3nC
Drain-source voltage: 30V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 30V; TSOT23-6
Mounting: SMD
Case: TSOT23-6
Type of transistor: N-MOSFET x2
Gate charge: 11.3nC
Drain-source voltage: 30V
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 9.43 грн |
| SMAJ54CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| FMMT459QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| AS7815ADTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; AS78XXA
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±4%
Output voltage: 15V
Input voltage: 17.9...30V
Manufacturer series: AS78XXA
Case: DPAK
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; AS78XXA
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±4%
Output voltage: 15V
Input voltage: 17.9...30V
Manufacturer series: AS78XXA
Case: DPAK
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| DDZ30ASF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Zener voltage: 30V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Zener voltage: 30V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
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| SD103CW-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; 10ns; reel,tape
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; 10ns; reel,tape
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky switching
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| SD103CWS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
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од. на суму грн.






















