Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71643) > Сторінка 1195 з 1195
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN601VK-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT563 Polarisation: unipolar Power dissipation: 0.25W Drain current: 0.3A Pulsed drain current: 0.8A On-state resistance: 3Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMN601VKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563 Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT563 Polarisation: unipolar Power dissipation: 0.25W Drain current: 0.3A Pulsed drain current: 0.8A On-state resistance: 3Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
ZXMP3A13FTA | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.625W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.3A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2271 шт: термін постачання 14-30 дні (днів) |
|
| DMN601VK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Power dissipation: 0.25W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Power dissipation: 0.25W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DMN601VKQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Power dissipation: 0.25W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Power dissipation: 0.25W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP3A13FTA |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2271 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.38 грн |
| 15+ | 29.29 грн |
| 50+ | 19.97 грн |
| 100+ | 16.70 грн |
| 500+ | 11.16 грн |
| 1000+ | 9.65 грн |
| 1500+ | 8.81 грн |

