Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72171) > Сторінка 1199 з 1203
| Фото | Назва | Виробник | Інформація |
Доступність |
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| 1N4937-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns |
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| 1N4937G-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||||
| SB140-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V; reel Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel |
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В кошику од. на суму грн. | |||||||||||||||||
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PAM2310BECADJR | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SO8 Mounting: SMD Operating temperature: -40...85°C Topology: buck Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Case: SO8 Output voltage: 0.6...5.5V DC Output current: 2A Input voltage: 2.7...5.5V DC Efficiency: 95% Frequency: 1.5MHz Kind of package: reel; tape |
на замовлення 2972 шт: термін постачання 14-30 дні (днів) |
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DMN65D8L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.21A Power dissipation: 0.54W On-state resistance: 4Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
на замовлення 6382 шт: термін постачання 14-30 дні (днів) |
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DMN65D8LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.26A Power dissipation: 0.3W On-state resistance: 4Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
на замовлення 2976 шт: термін постачання 14-30 дні (днів) |
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| 74AHC00S14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Case: SO14 Kind of gate: NAND Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of inputs: 2 Family: AHC Supply voltage: 2...5.5V DC Technology: CMOS |
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| 74AHC00T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC Type of integrated circuit: digital Case: TSSOP14 Kind of gate: NAND Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of inputs: 2 Family: AHC Supply voltage: 2...5.5V DC Technology: CMOS |
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| 74AHC86T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Case: TSSOP14 Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: XOR Operating temperature: -40...150°C Number of inputs: 2 Family: AHC Supply voltage: 2...5.5V DC Technology: CMOS |
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В кошику од. на суму грн. | |||||||||||||||||
| ZTX1048A | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 17.5V Collector current: 4A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 150MHz Pulsed collector current: 20A |
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В кошику од. на суму грн. | |||||||||||||||||
| ZTX1048ASTZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 17.5V Collector current: 4A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 150MHz Pulsed collector current: 20A |
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В кошику од. на суму грн. | |||||||||||||||||
| ZTX1049A | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 25V; 4A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 4A Power dissipation: 1.5W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP7333-18SAG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.55V Output voltage: 1.8V Output current: 0.3A Case: SOT23 Mounting: SMD Manufacturer series: AP7333 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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| AP7375Q-33SP-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SO8-EP; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output current: 0.35A Voltage drop: 1.2V Output voltage: 3.3V Input voltage: 3...45V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7375Q Integrated circuit features: shutdown mode control input |
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В кошику од. на суму грн. | |||||||||||||||||
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AP2301SN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Case: U-DFN2020-6 Active logical level: low Kind of integrated circuit: high-side; USB switch Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Supply voltage: 2.7...5.5V DC |
на замовлення 2944 шт: термін постачання 14-30 дні (днів) |
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AP2511S-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Case: SO8 Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 70mΩ Output current: 2.5A Number of channels: 1 Supply voltage: 2.7...5.5V DC |
на замовлення 1268 шт: термін постачання 14-30 дні (днів) |
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AP2111SG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Case: SO8 Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 90mΩ Output current: 2A Number of channels: 1 Supply voltage: 2.7...5.5V DC |
на замовлення 244 шт: термін постачання 14-30 дні (днів) |
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B340-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Capacitance: 0.2nF Max. forward voltage: 0.5V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 17175 шт: термін постачання 14-30 дні (днів) |
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B340B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Capacitance: 0.2nF Max. forward voltage: 0.5V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 3487 шт: термін постачання 14-30 дні (днів) |
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B340LB-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.45V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 70A |
на замовлення 1428 шт: термін постачання 14-30 дні (днів) |
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| B340BQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 0.2nF Leakage current: 20mA Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| B340CE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 140pF Leakage current: 30mA Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| B340Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 0.2nF Leakage current: 20mA Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN1004UFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD Case: PowerDI®3333-8 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 5.1mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Drain current: 55A Drain-source voltage: 12V Kind of package: 7 inch reel; tape |
на замовлення 166 шт: термін постачання 14-30 дні (днів) |
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SMAJ30CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2120N-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD Operating temperature: -40...85°C Manufacturer series: AP2120 Case: SOT23 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.15A Voltage drop: 0.5V Output voltage: 2.5V Number of channels: 1 Tolerance: ±2% Input voltage: 2...6V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP2123LQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Case: SOT23 Mounting: SMD Polarisation: unipolar Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -2.4A Gate charge: 7.3nC On-state resistance: 123mΩ Power dissipation: 1.4W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG6968UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.85W Case: SOT26 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 24mΩ Drain current: 5.2A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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DMP2035UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.8A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2706 шт: термін постачання 14-30 дні (днів) |
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DMP2035U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Power dissipation: 0.81W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP2035UVTQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMP2035UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.5A Pulsed drain current: -40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP2035UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.3A Pulsed drain current: -40A Power dissipation: 1.6W Case: U-DFN1616-6 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 44nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP2035UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.5A Pulsed drain current: -40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP2035UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -24A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP2035UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP2035UVTQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| GBJ2510_HF | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 45780 шт: термін постачання 14-30 дні (днів) |
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AS431ARTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA Type of integrated circuit: voltage reference source Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±0.5% Operating voltage: 2.5...36V Maximum output current: 0.1A Reference voltage: 2.5V |
на замовлення 315 шт: термін постачання 14-30 дні (днів) |
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| SMAJ16AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSR43TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89 Polarisation: bipolar Mounting: SMD Frequency: 100MHz Type of transistor: NPN Case: SOT89 Collector current: 1A Quantity in set/package: 1000pcs. Power dissipation: 1W Current gain: 30...300 Collector-emitter voltage: 80V Kind of package: reel; tape |
на замовлення 232 шт: термін постачання 14-30 дні (днів) |
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DXT5551-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 1.2W Case: SOT89 Current gain: 30...250 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Frequency: 100...300MHz |
на замовлення 600 шт: термін постачання 14-30 дні (днів) |
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B280-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 80V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 75pF Max. forward voltage: 0.79V Load current: 2A Max. forward impulse current: 50A |
на замовлення 650 шт: термін постачання 14-30 дні (днів) |
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B280AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 80V; 2A; reel,tape Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Capacitance: 70pF Leakage current: 0.4mA Max. forward voltage: 0.79V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 80V |
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В кошику од. на суму грн. | ||||||||||||||||
| B280Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Capacitance: 75pF Leakage current: 2mA Max. forward voltage: 0.79V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 80V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FZT600BTA | DIODES INCORPORATED |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 140V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150...250MHz Kind of transistor: Darlington Current gain: 5000...100000 Pulsed collector current: 4A |
на замовлення 986 шт: термін постачання 14-30 дні (днів) |
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ZTX450 | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 15...300 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 150MHz |
на замовлення 743 шт: термін постачання 14-30 дні (днів) |
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ZTX450STZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 15...300 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 150MHz |
на замовлення 544 шт: термін постачання 14-30 дні (днів) |
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FZT689BTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Collector current: 4A Collector-emitter voltage: 20V Quantity in set/package: 1000pcs. Frequency: 150MHz |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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FZT489QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Collector current: 1A Collector-emitter voltage: 30V Current gain: 20...300 Quantity in set/package: 1000pcs. Frequency: 150MHz |
на замовлення 922 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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FZT789ATA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Collector current: 3A Collector-emitter voltage: 25V Current gain: 300...800 Quantity in set/package: 1000pcs. Frequency: 100MHz |
на замовлення 1013 шт: термін постачання 14-30 дні (днів) |
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| FCX789ATA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89 Type of transistor: PNP Polarisation: bipolar Power dissipation: 2W Case: SOT89 Mounting: SMD Kind of package: reel; tape Collector current: 3A Pulsed collector current: 8A Collector-emitter voltage: 25V Current gain: 75...800 Quantity in set/package: 1000pcs. Frequency: 100MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| FZT489TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Collector current: 1A Pulsed collector current: 4A Collector-emitter voltage: 30V Current gain: 20...300 Quantity in set/package: 1000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FZT589TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 30V Current gain: 40...300 Quantity in set/package: 1000pcs. Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FZT789AQTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry Type of transistor: PNP Polarisation: bipolar Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Collector current: 3A Pulsed collector current: 6A Collector-emitter voltage: 25V Current gain: 100...800 Quantity in set/package: 1000pcs. Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCX589TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89 Type of transistor: PNP Polarisation: bipolar Power dissipation: 2.3W Case: SOT89 Mounting: SMD Kind of package: reel; tape Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 30V Current gain: 40...300 Quantity in set/package: 1000pcs. Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FMMT589TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector current: 1A Collector-emitter voltage: 30V Quantity in set/package: 3000pcs. Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FMMT489TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector current: 1A Pulsed collector current: 4A Collector-emitter voltage: 30V Current gain: 20...300 Quantity in set/package: 3000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN4031SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Kind of package: 13 inch reel; tape Mounting: SMD Case: SO8 Polarisation: unipolar Gate charge: 18.6nC On-state resistance: 50mΩ Power dissipation: 2.6W Drain current: 5.6A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET |
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В кошику од. на суму грн. | ||||||||||||||||
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DMN4031SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Kind of package: 13 inch reel; tape Mounting: SMD Case: SO8 Polarisation: unipolar Gate charge: 18.6nC On-state resistance: 50mΩ Power dissipation: 2.6W Drain current: 5.6A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 40V Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N4937-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
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| 1N4937G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: glass passivated
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| SB140-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel
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од. на суму грн.
| PAM2310BECADJR |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Output voltage: 0.6...5.5V DC
Output current: 2A
Input voltage: 2.7...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Output voltage: 0.6...5.5V DC
Output current: 2A
Input voltage: 2.7...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Kind of package: reel; tape
на замовлення 2972 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.92 грн |
| 24+ | 17.42 грн |
| 27+ | 15.67 грн |
| 100+ | 14.58 грн |
| DMN65D8L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.21A
Power dissipation: 0.54W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.21A
Power dissipation: 0.54W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 6382 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.97 грн |
| 72+ | 5.83 грн |
| 106+ | 3.95 грн |
| 125+ | 3.33 грн |
| 500+ | 2.32 грн |
| 1000+ | 1.98 грн |
| 1500+ | 1.82 грн |
| 3000+ | 1.62 грн |
| DMN65D8LW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.26A
Power dissipation: 0.3W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.26A
Power dissipation: 0.3W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 2976 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.31 грн |
| 17+ | 25.17 грн |
| 19+ | 22.33 грн |
| 100+ | 13.75 грн |
| 500+ | 10.17 грн |
| 1000+ | 10.00 грн |
| 74AHC00S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Case: SO14
Kind of gate: NAND
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Case: SO14
Kind of gate: NAND
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Technology: CMOS
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| 74AHC00T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: NAND
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: NAND
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Technology: CMOS
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| 74AHC86T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Case: TSSOP14
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: XOR
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Case: TSSOP14
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: XOR
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Technology: CMOS
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| ZTX1048A |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 4A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 4A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Pulsed collector current: 20A
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| ZTX1048ASTZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 4A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 4A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Pulsed collector current: 20A
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| ZTX1049A |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 4A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 4A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 180MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 4A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 4A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 180MHz
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| AP7333-18SAG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 1.8V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7333
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 1.8V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7333
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
на замовлення 92 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.05 грн |
| 32+ | 13.17 грн |
| 36+ | 11.75 грн |
| 42+ | 10.08 грн |
| 50+ | 9.08 грн |
| AP7375Q-33SP-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 3.3V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 3.3V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
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| AP2301SN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: U-DFN2020-6
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: U-DFN2020-6
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
на замовлення 2944 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.43 грн |
| 29+ | 14.42 грн |
| 33+ | 12.75 грн |
| 100+ | 10.92 грн |
| 250+ | 10.58 грн |
| AP2511S-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: SO8
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 70mΩ
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: SO8
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 70mΩ
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
на замовлення 1268 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.33 грн |
| 24+ | 17.67 грн |
| 27+ | 15.58 грн |
| 32+ | 13.33 грн |
| 100+ | 11.08 грн |
| 250+ | 10.50 грн |
| AP2111SG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: SO8
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 90mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: SO8
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 90mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
на замовлення 244 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.10 грн |
| 16+ | 26.58 грн |
| 100+ | 22.17 грн |
| B340-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 17175 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.85 грн |
| 36+ | 11.75 грн |
| 44+ | 9.50 грн |
| 100+ | 7.17 грн |
| 150+ | 6.75 грн |
| 500+ | 6.17 грн |
| B340B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 3487 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.33 грн |
| 25+ | 16.83 грн |
| 30+ | 14.33 грн |
| 100+ | 8.25 грн |
| 500+ | 6.25 грн |
| 1000+ | 5.92 грн |
| 3000+ | 5.83 грн |
| B340LB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 70A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 70A
на замовлення 1428 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.85 грн |
| 75+ | 14.67 грн |
| 100+ | 14.08 грн |
| 250+ | 12.00 грн |
| 500+ | 10.42 грн |
| 1000+ | 9.25 грн |
| B340BQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
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| B340CE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
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од. на суму грн.
| B340Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
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| DMN1004UFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
на замовлення 166 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.84 грн |
| 10+ | 41.83 грн |
| 12+ | 36.58 грн |
| 50+ | 25.33 грн |
| 100+ | 21.75 грн |
| SMAJ30CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| AP2120N-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
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| DMP2123LQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.4A
Gate charge: 7.3nC
On-state resistance: 123mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.4A
Gate charge: 7.3nC
On-state resistance: 123mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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| DMG6968UDM-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.85W
Case: SOT26
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 24mΩ
Drain current: 5.2A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.85W
Case: SOT26
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 24mΩ
Drain current: 5.2A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 195 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.66 грн |
| 12+ | 36.00 грн |
| 14+ | 31.50 грн |
| 100+ | 18.67 грн |
| DMP2035UVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2706 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.38 грн |
| 15+ | 28.66 грн |
| 18+ | 24.42 грн |
| 100+ | 14.33 грн |
| 500+ | 10.50 грн |
| 1000+ | 9.42 грн |
| DMP2035U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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| DMP2035UVTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMP2035UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP2035UFCL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP2035UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP2035UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMP2035UVT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP2035UVTQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| GBJ2510_HF |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 45780 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 57.43 грн |
| AS431ARTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Maximum output current: 0.1A
Reference voltage: 2.5V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Maximum output current: 0.1A
Reference voltage: 2.5V
на замовлення 315 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.26 грн |
| 37+ | 11.33 грн |
| 43+ | 9.92 грн |
| 50+ | 8.42 грн |
| 100+ | 6.92 грн |
| 250+ | 6.58 грн |
| SMAJ16AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| BSR43TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Polarisation: bipolar
Mounting: SMD
Frequency: 100MHz
Type of transistor: NPN
Case: SOT89
Collector current: 1A
Quantity in set/package: 1000pcs.
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Polarisation: bipolar
Mounting: SMD
Frequency: 100MHz
Type of transistor: NPN
Case: SOT89
Collector current: 1A
Quantity in set/package: 1000pcs.
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
Kind of package: reel; tape
на замовлення 232 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.59 грн |
| 19+ | 22.17 грн |
| 100+ | 14.08 грн |
| DXT5551-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
на замовлення 600 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.48 грн |
| 25+ | 17.17 грн |
| 100+ | 13.25 грн |
| 250+ | 11.75 грн |
| 500+ | 10.67 грн |
| B280-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 80V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 80V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 650 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.97 грн |
| B280AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 2A; reel,tape
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 70pF
Leakage current: 0.4mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 2A; reel,tape
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 70pF
Leakage current: 0.4mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
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| B280Q-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 75pF
Leakage current: 2mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 75pF
Leakage current: 2mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
Application: automotive industry
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| FZT600BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...250MHz
Kind of transistor: Darlington
Current gain: 5000...100000
Pulsed collector current: 4A
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...250MHz
Kind of transistor: Darlington
Current gain: 5000...100000
Pulsed collector current: 4A
на замовлення 986 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.10 грн |
| 14+ | 31.33 грн |
| 50+ | 25.58 грн |
| 100+ | 23.58 грн |
| 250+ | 21.67 грн |
| ZTX450 | ![]() |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
на замовлення 743 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.59 грн |
| 10+ | 42.33 грн |
| 100+ | 29.00 грн |
| 200+ | 25.83 грн |
| 250+ | 25.00 грн |
| 500+ | 22.33 грн |
| ZTX450STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
на замовлення 544 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.28 грн |
| 10+ | 45.66 грн |
| 50+ | 32.33 грн |
| 100+ | 28.17 грн |
| 500+ | 22.17 грн |
| FZT689BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 10 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 74.48 грн |
| 10+ | 46.91 грн |
| FZT489QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 922 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| FZT789ATA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Collector-emitter voltage: 25V
Current gain: 300...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Collector-emitter voltage: 25V
Current gain: 300...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.87 грн |
| 10+ | 46.33 грн |
| 100+ | 29.41 грн |
| 250+ | 25.33 грн |
| 500+ | 23.00 грн |
| 1000+ | 21.92 грн |
| FCX789ATA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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| FZT489TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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| FZT589TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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| FZT789AQTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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| FCX589TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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| FMMT589TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
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| FMMT489TA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
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| DMN4031SSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| DMN4031SSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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