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D1213A-01W-7 DIODES INCORPORATED D1213A-01W.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01WSQ-7 DIODES INCORPORATED D1213A-01WSQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Semiconductor structure: unidirectional
Application: automotive industry; Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-02SO-7 DIODES INCORPORATED D1213A-02SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02WL-7 DIODES INCORPORATED D1213A_02WL.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04MR-13 DIODES INCORPORATED D1213A-04MR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: MSOP10
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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DMN601K-7 DMN601K-7 DIODES INCORPORATED DMN601K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 403 шт:
термін постачання 14-30 дні (днів)
84+5.36 грн
107+3.90 грн
139+3.00 грн
Мінімальне замовлення: 84 шт
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SMCJ18CA-13-F SMCJ18CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ18CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAZ5V1-13-F SMAZ5V1-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 6697 шт:
термін постачання 14-30 дні (днів)
23+19.64 грн
29+14.43 грн
33+12.60 грн
50+9.53 грн
100+8.79 грн
500+7.71 грн
1000+7.13 грн
5000+6.22 грн
Мінімальне замовлення: 23 шт
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DFLZ5V1-7 DFLZ5V1-7 DIODES INCORPORATED DFLZ-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; PowerDI®123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
36+12.50 грн
38+10.78 грн
Мінімальне замовлення: 36 шт
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DMMT3906W-7-f DMMT3906W-7-f DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
12+37.50 грн
22+19.24 грн
100+13.10 грн
500+10.12 грн
1000+9.12 грн
Мінімальне замовлення: 12 шт
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DMMT3906-7-F DMMT3906-7-F DIODES INCORPORATED DMMT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
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DMMT3906WQ-7-F DMMT3906WQ-7-F DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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HDS10M-13 DIODES INCORPORATED HDS10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; HDS
Features of semiconductor devices: glass passivated
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
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BAS20-7-F BAS20-7-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS20Q-13-F BAS20Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DW-7 BAS20DW-7 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DWQ-13 BAS20DWQ-13 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS20W-7-F BAS20W-7-F DIODES INCORPORATED BAS19W-BAS21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS70W-05-7-F BAS70W-05-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
на замовлення 2355 шт:
термін постачання 14-30 дні (днів)
22+20.54 грн
27+15.92 грн
30+13.93 грн
100+7.90 грн
500+5.41 грн
1000+4.68 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
BAS70W-7-F BAS70W-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-05Q-7-F BAS70W-05Q-7-F DIODES INCORPORATED BAS70WQ_-04Q_-05Q_-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-04Q-7-F BAS70W-04Q-7-F DIODES INCORPORATED BAS70WQ_-04Q_-05Q_-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-06-7-F BAS70W-06-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Reverse recovery time: 5ns
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BAS70W-06Q-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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 Мінімальне замовлення: 3000 шт
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BAS70WQ-7-F BAS70WQ-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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SMBJ13A-13-F SMBJ13A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
25+17.86 грн
31+13.60 грн
35+11.86 грн
46+9.12 грн
Мінімальне замовлення: 25 шт
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QSG0115UDJ-7 DIODES INCORPORATED QSG0115UDJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT963; SMD; 15V; 0.1A; 5ns; reel,tape
Case: SOT963
Mounting: SMD
Semiconductor structure: common cathode; double x2
Type of diode: Schottky switching
Capacitance: 8pF
Reverse recovery time: 5ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 0.4V
Max. forward impulse current: 2A
Max. off-state voltage: 15V
Kind of package: reel; tape
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 Мінімальне замовлення: 10000 шт
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DMG7401SFG-7 DIODES INCORPORATED DMG7401SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10.8A
Pulsed drain current: -80A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS40LP-7 BAS40LP-7 DIODES INCORPORATED BAS40LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
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BAT54JW-7-F BAT54JW-7-F DIODES INCORPORATED ds30157.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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SMBJ9.0CA-13-F SMBJ9.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.5V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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D24V0L1B2LP-7B D24V0L1B2LP-7B DIODES INCORPORATED D24V0L1B2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
на замовлення 9888 шт:
термін постачання 14-30 дні (днів)
32+14.29 грн
44+9.62 грн
54+7.71 грн
73+5.72 грн
100+4.89 грн
Мінімальне замовлення: 32 шт
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D24V0S1U2TQ-7 D24V0S1U2TQ-7 DIODES INCORPORATED D24V0S1U2TQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Mounting: SMD
Breakdown voltage: 27V
Case: SOD523
Kind of package: reel; tape
на замовлення 1128 шт:
термін постачання 14-30 дні (днів)
36+12.50 грн
41+10.12 грн
48+8.71 грн
63+6.63 грн
100+4.23 грн
500+3.94 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
D5V0P1B2LP-7B D5V0P1B2LP-7B DIODES INCORPORATED D5V0P1B2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
на замовлення 7550 шт:
термін постачання 14-30 дні (днів)
36+12.50 грн
66+6.30 грн
76+5.47 грн
127+3.27 грн
500+2.46 грн
1000+2.38 грн
2000+2.30 грн
5000+2.20 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
SMCJ9.0CA-13-F SMCJ9.0CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 10÷11.1V; 97.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 97.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
14+33.93 грн
17+25.70 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
SMAJ9.0CA-13-F SMAJ9.0CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SDMK0340L-7-F SDMK0340L-7-F DIODES INCORPORATED ds30239.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
на замовлення 2814 шт:
термін постачання 14-30 дні (днів)
50+8.93 грн
59+7.13 грн
63+6.63 грн
100+4.96 грн
500+4.24 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
AP64060WU-7 DIODES INCORPORATED AP64060_AP64062.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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D3Z8V2BF-7 DIODES INCORPORATED D3ZxVxBF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
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ZXMN6A25GTA DIODES INCORPORATED ZXMN6A25G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.7A
Power dissipation: 2W
Case: SOT223
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
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 Мінімальне замовлення: 1000 шт
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GBU608 GBU608 DIODES INCORPORATED GBU6_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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ZXTN25012EZTA ZXTN25012EZTA DIODES INCORPORATED ZXTN25012EZ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
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ZXTN25012EFLTA DIODES INCORPORATED ZXTN25012EFL.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2A
Case: SOT23
Mounting: SMD
Frequency: 260MHz
Pulsed collector current: 12A
Power dissipation: 0.35W
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 Мінімальне замовлення: 3000 шт
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74AHC32S14-13 DIODES INCORPORATED 74AHC32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74AHC32T14-13 DIODES INCORPORATED 74AHC32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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KBP406G DIODES INCORPORATED KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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BZT52C3V6LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C3V6Q-7-F BZT52C3V6Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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74LVC1G97DW-7 74LVC1G97DW-7 DIODES INCORPORATED 74LVC1G97.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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74LVC1G97FW4-7 DIODES INCORPORATED 74LVC1G97.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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74LVC1G97FZ4-7 DIODES INCORPORATED 74LVC1G97.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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74LVC1G97W6-7 74LVC1G97W6-7 DIODES INCORPORATED 74LVC1G97.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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SMAJ12CAQ-13-F SMAJ12CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DMP3036SSD-13 DMP3036SSD-13 DIODES INCORPORATED DMP3036SSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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 Мінімальне замовлення: 2500 шт
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DMP3028LSD-13 DMP3028LSD-13 DIODES INCORPORATED DMP3028LSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -30A
Power dissipation: 1.1W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 38mΩ
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DMP3048LSD-13 DMP3048LSD-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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DMP3056LSDQ-13 DMP3056LSDQ-13 DIODES INCORPORATED DMP3056LSDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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 Мінімальне замовлення: 2500 шт
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ZXT951KTC DIODES INCORPORATED ZXT951K.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
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 Мінімальне замовлення: 2500 шт
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AS324MTR-G1 AS324MTR-G1 DIODES INCORPORATED AS324_A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
11+41.07 грн
16+26.86 грн
20+21.31 грн
100+10.12 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
D1213A-01W-7 D1213A-01W.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01WSQ-7 D1213A-01WSQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Semiconductor structure: unidirectional
Application: automotive industry; Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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Мінімальне замовлення: 3000 шт
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D1213A-02SO-7 D1213A-02SO.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02WL-7 D1213A_02WL.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04MR-13 D1213A-04MR.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: MSOP10
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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DMN601K-7 DMN601K.pdf
DMN601K-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 403 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
84+5.36 грн
107+3.90 грн
139+3.00 грн
Мінімальне замовлення: 84 шт
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SMCJ18CA-13-F SMCJ_ser.pdf
SMCJ18CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ18CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAZ5V1-13-F SMAZx-13-F.pdf
SMAZ5V1-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 6697 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
23+19.64 грн
29+14.43 грн
33+12.60 грн
50+9.53 грн
100+8.79 грн
500+7.71 грн
1000+7.13 грн
5000+6.22 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
DFLZ5V1-7 DFLZ-ser.pdf
DFLZ5V1-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; PowerDI®123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.50 грн
38+10.78 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DMMT3906W-7-f DMMT3906W.pdf
DMMT3906W-7-f
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+37.50 грн
22+19.24 грн
100+13.10 грн
500+10.12 грн
1000+9.12 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
DMMT3906-7-F DMMT3906.pdf
DMMT3906-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
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DMMT3906WQ-7-F DMMT3906W.pdf
DMMT3906WQ-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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HDS10M-13 HDS10M.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; HDS
Features of semiconductor devices: glass passivated
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
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BAS20-7-F Ds12004.pdf
BAS20-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS20Q-13-F Ds12004.pdf
BAS20Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DW-7 Ds30617.pdf
BAS20DW-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DWQ-13 Ds30617.pdf
BAS20DWQ-13
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS20W-7-F BAS19W-BAS21W.pdf
BAS20W-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS70W-05-7-F BAS70W_-04_-05_-06.pdf
BAS70W-05-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
на замовлення 2355 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
22+20.54 грн
27+15.92 грн
30+13.93 грн
100+7.90 грн
500+5.41 грн
1000+4.68 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
BAS70W-7-F BAS70W_-04_-05_-06.pdf
BAS70W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-05Q-7-F BAS70WQ_-04Q_-05Q_-06Q.pdf
BAS70W-05Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-04Q-7-F BAS70WQ_-04Q_-05Q_-06Q.pdf
BAS70W-04Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-06-7-F BAS70W_-04_-05_-06.pdf
BAS70W-06-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Reverse recovery time: 5ns
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BAS70W-06Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS70WQ-7-F
BAS70WQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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SMBJ13A-13-F SMBJ_ser.pdf
SMBJ13A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
25+17.86 грн
31+13.60 грн
35+11.86 грн
46+9.12 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
QSG0115UDJ-7 QSG0115UDJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT963; SMD; 15V; 0.1A; 5ns; reel,tape
Case: SOT963
Mounting: SMD
Semiconductor structure: common cathode; double x2
Type of diode: Schottky switching
Capacitance: 8pF
Reverse recovery time: 5ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 0.4V
Max. forward impulse current: 2A
Max. off-state voltage: 15V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMG7401SFG-7 DMG7401SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10.8A
Pulsed drain current: -80A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS40LP-7 BAS40LP.pdf
BAS40LP-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
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BAT54JW-7-F ds30157.pdf
BAT54JW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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SMBJ9.0CA-13-F SMBJ_ser.pdf
SMBJ9.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.5V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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D24V0L1B2LP-7B D24V0L1B2LP.pdf
D24V0L1B2LP-7B
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
на замовлення 9888 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
32+14.29 грн
44+9.62 грн
54+7.71 грн
73+5.72 грн
100+4.89 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
D24V0S1U2TQ-7 D24V0S1U2TQ.pdf
D24V0S1U2TQ-7
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Mounting: SMD
Breakdown voltage: 27V
Case: SOD523
Kind of package: reel; tape
на замовлення 1128 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.50 грн
41+10.12 грн
48+8.71 грн
63+6.63 грн
100+4.23 грн
500+3.94 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
D5V0P1B2LP-7B D5V0P1B2LP.pdf
D5V0P1B2LP-7B
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
на замовлення 7550 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.50 грн
66+6.30 грн
76+5.47 грн
127+3.27 грн
500+2.46 грн
1000+2.38 грн
2000+2.30 грн
5000+2.20 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
SMCJ9.0CA-13-F SMCJ_ser.pdf
SMCJ9.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 10÷11.1V; 97.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 97.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+33.93 грн
17+25.70 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
SMAJ9.0CA-13-F SMAJ_ser.pdf
SMAJ9.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SDMK0340L-7-F ds30239.pdf
SDMK0340L-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
на замовлення 2814 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+8.93 грн
59+7.13 грн
63+6.63 грн
100+4.96 грн
500+4.24 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
AP64060WU-7 AP64060_AP64062.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
D3Z8V2BF-7 D3ZxVxBF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
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ZXMN6A25GTA ZXMN6A25G.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.7A
Power dissipation: 2W
Case: SOT223
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
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GBU608 GBU6_ser.pdf
GBU608
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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ZXTN25012EZTA ZXTN25012EZ.pdf
ZXTN25012EZTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
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ZXTN25012EFLTA ZXTN25012EFL.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2A
Case: SOT23
Mounting: SMD
Frequency: 260MHz
Pulsed collector current: 12A
Power dissipation: 0.35W
товару немає в наявності
Мінімальне замовлення: 3000 шт
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74AHC32S14-13 74AHC32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
товару немає в наявності
Мінімальне замовлення: 5 шт
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74AHC32T14-13 74AHC32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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KBP406G KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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BZT52C3V6LP-7 BZT52CxxLP_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C3V6Q-7-F ds18004.pdf
BZT52C3V6Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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74LVC1G97DW-7 74LVC1G97.pdf
74LVC1G97DW-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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74LVC1G97FW4-7 74LVC1G97.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
товару немає в наявності
Мінімальне замовлення: 5 шт
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74LVC1G97FZ4-7 74LVC1G97.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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74LVC1G97W6-7 74LVC1G97.pdf
74LVC1G97W6-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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SMAJ12CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ12CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DMP3036SSD-13 DMP3036SSD.pdf
DMP3036SSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMP3028LSD-13 DMP3028LSD.pdf
DMP3028LSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -30A
Power dissipation: 1.1W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 38mΩ
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DMP3048LSD-13
DMP3048LSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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DMP3056LSDQ-13 DMP3056LSDQ.pdf
DMP3056LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ZXT951KTC ZXT951K.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
AS324MTR-G1 AS324_A.pdf
AS324MTR-G1
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+41.07 грн
16+26.86 грн
20+21.31 грн
100+10.12 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
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