Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74616) > Сторінка 1199 з 1244

Обрати Сторінку:   [  << Попередня Сторінка ]  1 124 248 372 496 620 744 868 992 1116 1194 1195 1196 1197 1198 1199 1200 1201 1202 1203 1204 1240 1244  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
DSS4160FDB-7 DIODES INCORPORATED DSS4160FDB.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: NPN x2
Power dissipation: 2.47W
Collector current: 1A
Pulsed collector current: 1.5A
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Frequency: 90...175MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160T-7 DIODES INCORPORATED DSS4160T.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160TQ-7 DIODES INCORPORATED DSS4160T.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160U-7 DIODES INCORPORATED ds31684.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160V-7 DIODES INCORPORATED DSS4160V.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
BC847BSQ-7-F DIODES INCORPORATED BC847BSQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
24+18.29 грн
40+10.27 грн
100+6.33 грн
500+4.65 грн
1000+4.10 грн
3000+3.40 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SMBT70A-13-F SMBT70A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA776C536A98BF&compId=SMAT70A_SMBT70A.pdf?ci_sign=7dfc0f0ee599f4eae6481b534c5c3e36df805583 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Mounting: SMD
Case: SMB
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 5µA
Max. forward impulse current: 5.3A
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
В кошику  од. на суму  грн.
MB10F-13 MB10F-13 DIODES INCORPORATED MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 2652 шт:
термін постачання 21-30 дні (днів)
13+33.96 грн
18+22.56 грн
100+12.86 грн
250+10.35 грн
500+9.06 грн
1000+8.01 грн
2000+7.12 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
RS2M-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
RS2MA-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4401-13-F DIODES INCORPORATED MMBT4401.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4401T-7-F DIODES INCORPORATED ds30272.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ30AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
P4SMAJ30ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
P6SMAJ30ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ33AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
MURS360B-13-F DIODES INCORPORATED MURS360B.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.25V
Load current: 3A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMB
Type of diode: rectifying
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ33CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4403T-7-F DIODES INCORPORATED ds30273.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847AQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847AW-7-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ18AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GBJ3510-F DIODES INCORPORATED GBJ3510.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA42-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA42Q-7-F DIODES INCORPORATED DS_31_MMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
ES2BA-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 920mV; reel,tape
Case: SMA
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ES2B-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMB; Ufmax: 920mV; reel,tape
Case: SMB
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BAS21DWAQ-7 DIODES INCORPORATED BAS21DWA.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT353
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
ES2A-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMB; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.92V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ES2AA-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMA; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.92V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HLP-7B DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HLPQ-7B DIODES INCORPORATED BAS16HLPQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HTW-13 DIODES INCORPORATED BAS16HTW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HTWQ-13 DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HTWQ-13R DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BC856B-13-F DIODES INCORPORATED ds11207.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC856BQ-7-F DIODES INCORPORATED BC856AQ-BC857BQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC856BW-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC856BWQ-7 DIODES INCORPORATED BC856BWQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BFS17NTA DIODES INCORPORATED ds32160.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
товару немає в наявності
В кошику  од. на суму  грн.
BFS17NQTA DIODES INCORPORATED ds32160.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BAV23SQ-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.625A
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LANTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LANTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LARTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LAZTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LBKTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LBNTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LBZTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.25V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.25V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.25...18V
Kind of package: Ammo Pack
Maximum output current: 0.1A
товару немає в наявності
В кошику  од. на суму  грн.
ZXTD718MCTA ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2676 шт:
термін постачання 21-30 дні (днів)
8+56.61 грн
10+46.50 грн
100+32.91 грн
500+25.55 грн
1000+25.23 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ5.0AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DPLS350E-13 DIODES INCORPORATED ds31230.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
товару немає в наявності
В кошику  од. на суму  грн.
BC857BSQ-7-F BC857BSQ-7-F DIODES INCORPORATED ds30373.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DPLS160-7 DIODES INCORPORATED ds31389.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
товару немає в наявності
В кошику  од. на суму  грн.
DPLS160V-7 DIODES INCORPORATED ds31251.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
товару немає в наявності
В кошику  од. на суму  грн.
ES3BB-13-F ES3BB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
на замовлення 1476 шт:
термін постачання 21-30 дні (днів)
10+43.54 грн
16+26.85 грн
25+24.34 грн
100+20.70 грн
250+18.28 грн
500+16.50 грн
1000+15.85 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES3B-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GBJ2010-F DIODES INCORPORATED GBJ20005%7EGBJ2010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
товару немає в наявності
В кошику  од. на суму  грн.
RS1JDFQ-13 DIODES INCORPORATED RS1JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160FDB-7 DSS4160FDB.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: NPN x2
Power dissipation: 2.47W
Collector current: 1A
Pulsed collector current: 1.5A
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Frequency: 90...175MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160T-7 DSS4160T.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160TQ-7 DSS4160T.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160U-7 ds31684.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
DSS4160V-7 DSS4160V.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику  од. на суму  грн.
BC847BSQ-7-F BC847BSQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.29 грн
40+10.27 грн
100+6.33 грн
500+4.65 грн
1000+4.10 грн
3000+3.40 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SMBT70A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA776C536A98BF&compId=SMAT70A_SMBT70A.pdf?ci_sign=7dfc0f0ee599f4eae6481b534c5c3e36df805583
SMBT70A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Mounting: SMD
Case: SMB
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 5µA
Max. forward impulse current: 5.3A
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
В кошику  од. на суму  грн.
MB10F-13 MB10F.pdf
MB10F-13
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 2652 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.96 грн
18+22.56 грн
100+12.86 грн
250+10.35 грн
500+9.06 грн
1000+8.01 грн
2000+7.12 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
RS2M-13-F ds15004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
RS2MA-13-F ds15004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4401-13-F MMBT4401.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4401T-7-F ds30272.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ30AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
P4SMAJ30ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
P6SMAJ30ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ33AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
MURS360B-13-F MURS360B.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.25V
Load current: 3A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMB
Type of diode: rectifying
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ33CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4403T-7-F ds30273.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847AQ-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847AW-7-F BC846AW-BC848CW.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ18AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GBJ3510-F GBJ3510.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA42-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA42Q-7-F DS_31_MMBTA42.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
ES2BA-13-F ds14002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 920mV; reel,tape
Case: SMA
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ES2B-13-F ds14002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMB; Ufmax: 920mV; reel,tape
Case: SMB
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BAS21DWAQ-7 BAS21DWA.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT353
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
ES2A-13-F ds14002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMB; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.92V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ES2AA-13-F ds14002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMA; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.92V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HLP-7B
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HLPQ-7B BAS16HLPQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HTW-13 BAS16HTW.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HTWQ-13 BAS16HTWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BAS16HTWQ-13R BAS16HTWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
товару немає в наявності
В кошику  од. на суму  грн.
BC856B-13-F ds11207.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC856BQ-7-F BC856AQ-BC857BQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC856BW-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC856BWQ-7 BC856BWQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BFS17NTA ds32160.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
товару немає в наявності
В кошику  од. на суму  грн.
BFS17NQTA ds32160.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BAV23SQ-7-F BAV23A_C_S.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.625A
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LANTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LANTR-E1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LARTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LAZTR-E1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LBKTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LBNTR-E1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику  од. на суму  грн.
AZ431LBZTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.25V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.25V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.25...18V
Kind of package: Ammo Pack
Maximum output current: 0.1A
товару немає в наявності
В кошику  од. на суму  грн.
ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2676 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.61 грн
10+46.50 грн
100+32.91 грн
500+25.55 грн
1000+25.23 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ5.0AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DPLS350E-13 ds31230.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
товару немає в наявності
В кошику  од. на суму  грн.
BC857BSQ-7-F ds30373.pdf
BC857BSQ-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ30CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DPLS160-7 ds31389.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
товару немає в наявності
В кошику  од. на суму  грн.
DPLS160V-7 ds31251.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
товару немає в наявності
В кошику  од. на суму  грн.
ES3BB-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd
ES3BB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
на замовлення 1476 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.54 грн
16+26.85 грн
25+24.34 грн
100+20.70 грн
250+18.28 грн
500+16.50 грн
1000+15.85 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES3B-13-F ds14003.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GBJ2010-F GBJ20005%7EGBJ2010.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
товару немає в наявності
В кошику  од. на суму  грн.
RS1JDFQ-13 RS1JDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 124 248 372 496 620 744 868 992 1116 1194 1195 1196 1197 1198 1199 1200 1201 1202 1203 1204 1240 1244  [ Наступна Сторінка >> ]