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74LVC1G97FZ4-7 DIODES INCORPORATED 74LVC1G97.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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74LVC1G97W6-7 74LVC1G97W6-7 DIODES INCORPORATED 74LVC1G97.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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SMAJ12CAQ-13-F SMAJ12CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DMP3036SSD-13 DMP3036SSD-13 DIODES INCORPORATED DMP3036SSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP3028LSD-13 DMP3028LSD-13 DIODES INCORPORATED DMP3028LSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -30A
Power dissipation: 1.1W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 38mΩ
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DMP3048LSD-13 DMP3048LSD-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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DMP3056LSDQ-13 DMP3056LSDQ-13 DIODES INCORPORATED DMP3056LSDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXT951KTC DIODES INCORPORATED ZXT951K.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
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AS324MTR-G1 AS324MTR-G1 DIODES INCORPORATED AS324_A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
11+41.55 грн
16+27.17 грн
20+21.55 грн
100+10.23 грн
Мінімальне замовлення: 11 шт
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DMP3028LK3-13 DMP3028LK3-13 DIODES INCORPORATED DMP3028LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -22A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252
On-state resistance: 25mΩ
на замовлення 1396 шт:
термін постачання 14-30 дні (днів)
7+68.64 грн
11+39.25 грн
100+25.58 грн
500+19.79 грн
1000+17.95 грн
Мінімальне замовлення: 7 шт
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DMP3008SFGQ-7 DMP3008SFGQ-7 DIODES INCORPORATED DMP3008SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
на замовлення 3220 шт:
термін постачання 14-30 дні (днів)
5+99.35 грн
10+58.54 грн
100+43.11 грн
500+37.82 грн
Мінімальне замовлення: 5 шт
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SDT20A120CT SDT20A120CT DIODES INCORPORATED SDT20A120CT-SDT20A120CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
9+50.58 грн
12+35.31 грн
Мінімальне замовлення: 9 шт
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DT2042-04TS-7 DIODES INCORPORATED DT2042-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Application: HDMI
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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DT2042-04SO-7 DT2042-04SO-7 DIODES INCORPORATED DT2042-04SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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SDT20B100D1-13 SDT20B100D1-13 DIODES INCORPORATED SDT20B100D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.82V
Leakage current: 16mA
Max. forward impulse current: 100A
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SDT20A100CT SDT20A100CT DIODES INCORPORATED SDT20A100CT-SDT20A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.67V
Leakage current: 20mA
Max. forward impulse current: 200A
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DMN2053U-7 DMN2053U-7 DIODES INCORPORATED DMN2053U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMMT5551S-7-F DMMT5551S-7-F DIODES INCORPORATED DMMT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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AP7313-15SAG-7 AP7313-15SAG-7 DIODES INCORPORATED AP7313.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
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ZXRE160FT4-7 DIODES INCORPORATED ZXRE160.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
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ZXRE160AH5TA DIODES INCORPORATED ZXRE160.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+26.91 грн
Мінімальне замовлення: 3000 шт
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ZXRE160ET5TA DIODES INCORPORATED ZXRE160.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
3000+23.84 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMBZ5257B-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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MMBZ5257BQ-7-F DIODES INCORPORATED ds18011.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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MMBZ5257BT-7-F DIODES INCORPORATED ds30267.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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 Мінімальне замовлення: 3000 шт
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MMBZ5257BTS-7-F DIODES INCORPORATED MMBZ5221-5259BTS.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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DDTA123ECA-7-F DDTA123ECA-7-F DIODES INCORPORATED ds30333.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTA123EE-7-F DIODES INCORPORATED ds30317.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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SMAJ75A-13-F SMAJ75A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5009 шт:
термін постачання 14-30 дні (днів)
30+15.35 грн
40+10.73 грн
46+9.31 грн
100+6.16 грн
500+5.03 грн
1000+4.81 грн
2000+4.64 грн
5000+4.44 грн
Мінімальне замовлення: 30 шт
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SMAJ75CA-13-F SMAJ75CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ75ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 10000 шт
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P6SMAJ75ADFQ-13 DIODES INCORPORATED P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMN1054UCB4-7 DIODES INCORPORATED DMN1054UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Power dissipation: 1.34W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Pulsed drain current: 8A
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 Мінімальне замовлення: 3000 шт
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T5V0DLP-7B DIODES INCORPORATED ds31906.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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DF005S-T DF005S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74LVC2G06FX4-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC2G06FZ4-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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74LVC2G06W6-7 74LVC2G06W6-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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D3V3XA4B10LP-7 DIODES INCORPORATED D3V3XA4B10LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
товару немає в наявності
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D3V3XA4B10LP-7 DIODES INCORPORATED D3V3XA4B10LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)
3000+6.59 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAW156TQ-7-F BAW156TQ-7-F DIODES INCORPORATED BAW156TQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
14+32.51 грн
22+19.88 грн
100+9.98 грн
500+5.22 грн
1000+4.50 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
KBJ601G KBJ601G DIODES INCORPORATED KBJ6005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. forward impulse current: 170A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: KBJ
Type of bridge rectifier: single-phase
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DMN601WK-7 DMN601WK-7 DIODES INCORPORATED DMN601WK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN601WKQ-13 DMN601WKQ-13 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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 Мінімальне замовлення: 10000 шт
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DMN601WKQ-7 DMN601WKQ-7 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DDZ12ASF-7 DDZ12ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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BC847PN-7R-F BC847PN-7R-F DIODES INCORPORATED BC847PN.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC847PNQ-7-F BC847PNQ-7-F DIODES INCORPORATED BC847PNQ.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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BC847PNQ-7R-F BC847PNQ-7R-F DIODES INCORPORATED BC847PNQ.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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TB1100H-13-F DIODES INCORPORATED ds30360.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. off-state voltage: 90V
Max. forward impulse current: 100A
Breakover voltage: 130V
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ZVN2120GTA ZVN2120GTA DIODES INCORPORATED ZVN2120G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 DIODES INCORPORATED ds30793.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
11+43.35 грн
14+31.87 грн
16+27.84 грн
100+17.78 грн
500+13.59 грн
1000+12.58 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
74HCT126T14-13 74HCT126T14-13 DIODES INCORPORATED 74HCT126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
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AP2210N-5.0TRG1 AP2210N-5.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1171 шт:
термін постачання 14-30 дні (днів)
30+15.35 грн
37+11.41 грн
42+10.06 грн
50+8.55 грн
55+7.72 грн
100+7.04 грн
250+6.37 грн
500+6.04 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
AP2210N-4.0TRG1AP2210N-4.0TRG1
AP2210N-4.0TRG1AP2210N-4.0TRG1
 AP2210N-4.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1615 шт:
термін постачання 14-30 дні (днів)
34+13.55 грн
41+10.23 грн
48+8.89 грн
57+7.46 грн
100+6.04 грн
250+5.54 грн
500+5.20 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
AP2210N-3.0TRG1 AP2210N-3.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
34+13.55 грн
41+10.23 грн
48+8.89 грн
56+7.55 грн
100+6.12 грн
250+5.70 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
AP2210N-2.5TRE1 AP2210N-2.5TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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 Мінімальне замовлення: 3000 шт
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AP2210N-3.0TRE1 AP2210N-3.0TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZT585B20T-7 BZT585B20T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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SMF4L24A-7 DIODES INCORPORATED SMF4Lxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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74LVC1G97FZ4-7 74LVC1G97.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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74LVC1G97W6-7 74LVC1G97.pdf
74LVC1G97W6-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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SMAJ12CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ12CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DMP3036SSD-13 DMP3036SSD.pdf
DMP3036SSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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Мінімальне замовлення: 2500 шт
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DMP3028LSD-13 DMP3028LSD.pdf
DMP3028LSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -30A
Power dissipation: 1.1W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 38mΩ
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DMP3048LSD-13
DMP3048LSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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DMP3056LSDQ-13 DMP3056LSDQ.pdf
DMP3056LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ZXT951KTC ZXT951K.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
AS324MTR-G1 AS324_A.pdf
AS324MTR-G1
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+41.55 грн
16+27.17 грн
20+21.55 грн
100+10.23 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
DMP3028LK3-13 DMP3028LK3.pdf
DMP3028LK3-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -22A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252
On-state resistance: 25mΩ
на замовлення 1396 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+68.64 грн
11+39.25 грн
100+25.58 грн
500+19.79 грн
1000+17.95 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
на замовлення 3220 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+99.35 грн
10+58.54 грн
100+43.11 грн
500+37.82 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
SDT20A120CT SDT20A120CT-SDT20A120CTFP.pdf
SDT20A120CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+50.58 грн
12+35.31 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DT2042-04TS-7 DT2042-04TS.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Application: HDMI
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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DT2042-04SO-7 DT2042-04SO.pdf
DT2042-04SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 1.5pF
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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В кошику  од. на суму  грн.
SDT20B100D1-13 SDT20B100D1.pdf
SDT20B100D1-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.82V
Leakage current: 16mA
Max. forward impulse current: 100A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SDT20A100CT SDT20A100CT-SDT20A100CTFP.pdf
SDT20A100CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.67V
Leakage current: 20mA
Max. forward impulse current: 200A
товару немає в наявності
В кошику  од. на суму  грн.
DMN2053U-7 DMN2053U.pdf
DMN2053U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
DMMT5551S-7-F DMMT5551.pdf
DMMT5551S-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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В кошику  од. на суму  грн.
AP7313-15SAG-7 AP7313.pdf
AP7313-15SAG-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.5V
Kind of package: reel; tape
Case: SOT23
Number of channels: 1
Tolerance: ±2%
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В кошику  од. на суму  грн.
ZXRE160FT4-7 ZXRE160.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
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В кошику  од. на суму  грн.
ZXRE160AH5TA ZXRE160.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3000+26.91 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ZXRE160ET5TA ZXRE160.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3000+23.84 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMBZ5257B-7-F MMBZ5221B-MMBZ5259B.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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MMBZ5257BQ-7-F ds18011.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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В кошику  од. на суму  грн.
MMBZ5257BT-7-F ds30267.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMBZ5257BTS-7-F MMBZ5221-5259BTS.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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В кошику  од. на суму  грн.
DDTA123ECA-7-F ds30333.pdf
DDTA123ECA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTA123EE-7-F ds30317.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ75A-13-F SMAJ_ser.pdf
SMAJ75A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5009 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.35 грн
40+10.73 грн
46+9.31 грн
100+6.16 грн
500+5.03 грн
1000+4.81 грн
2000+4.64 грн
5000+4.44 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMAJ75CA-13-F SMAJ_ser.pdf
SMAJ75CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику  од. на суму  грн.
P6SMAJ75ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
P6SMAJ75ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMN1054UCB4-7 DMN1054UCB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Power dissipation: 1.34W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 8V
Type of transistor: N-MOSFET
Gate-source voltage: ±5V
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Pulsed drain current: 8A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
T5V0DLP-7B ds31906.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DF005S-T DF005_10S.pdf
DF005S-T
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74LVC2G06FX4-7 74LVC2G06.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
74LVC2G06FZ4-7 74LVC2G06.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
74LVC2G06W6-7 74LVC2G06.pdf
74LVC2G06W6-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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В кошику  од. на суму  грн.
D3V3XA4B10LP-7 D3V3XA4B10LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
D3V3XA4B10LP-7 D3V3XA4B10LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3000+6.59 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAW156TQ-7-F BAW156TQ.pdf
BAW156TQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+32.51 грн
22+19.88 грн
100+9.98 грн
500+5.22 грн
1000+4.50 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
KBJ601G KBJ6005G_ser.pdf
KBJ601G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. forward impulse current: 170A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: KBJ
Type of bridge rectifier: single-phase
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DMN601WK-7 DMN601WK.pdf
DMN601WK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
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DMN601WKQ-13 DMN601WKQ.pdf
DMN601WKQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMN601WKQ-7 DMN601WKQ.pdf
DMN601WKQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DDZ12ASF-7 ds31987.pdf
DDZ12ASF-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BC847PN-7R-F BC847PN.pdf
BC847PN-7R-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC847PNQ-7-F BC847PNQ.pdf
BC847PNQ-7-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BC847PNQ-7R-F BC847PNQ.pdf
BC847PNQ-7R-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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В кошику  од. на суму  грн.
TB1100H-13-F ds30360.pdf
Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. off-state voltage: 90V
Max. forward impulse current: 100A
Breakover voltage: 130V
товару немає в наявності
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ZVN2120GTA ZVN2120G.pdf
ZVN2120GTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 ds30793.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+43.35 грн
14+31.87 грн
16+27.84 грн
100+17.78 грн
500+13.59 грн
1000+12.58 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
74HCT126T14-13 74HCT126.pdf
74HCT126T14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
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В кошику  од. на суму  грн.
AP2210N-5.0TRG1 AP2210.pdf
AP2210N-5.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1171 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.35 грн
37+11.41 грн
42+10.06 грн
50+8.55 грн
55+7.72 грн
100+7.04 грн
250+6.37 грн
500+6.04 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
AP2210N-4.0TRG1 AP2210.pdf
AP2210N-4.0TRG1AP2210N-4.0TRG1
AP2210N-4.0TRG1AP2210N-4.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1615 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.55 грн
41+10.23 грн
48+8.89 грн
57+7.46 грн
100+6.04 грн
250+5.54 грн
500+5.20 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
AP2210N-3.0TRG1 AP2210.pdf
AP2210N-3.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.55 грн
41+10.23 грн
48+8.89 грн
56+7.55 грн
100+6.12 грн
250+5.70 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
AP2210N-2.5TRE1 AP2210.pdf
AP2210N-2.5TRE1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AP2210N-3.0TRE1 AP2210.pdf
AP2210N-3.0TRE1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZT585B20T-7 BZT585BxVxT.pdf
BZT585B20T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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SMF4L24A-7 SMF4Lxx.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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