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2N7002A-7 2N7002A-7 DIODES INCORPORATED ds31360.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
на замовлення 1485 шт:
термін постачання 14-30 дні (днів)
36+12.56 грн
55+7.67 грн
78+5.35 грн
100+4.58 грн
500+3.27 грн
1000+2.85 грн
Мінімальне замовлення: 36
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2N7002AQ-7 2N7002AQ-7 DIODES INCORPORATED 2N7002AQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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2N7002H-13 DIODES INCORPORATED 2N7002H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
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2N7002EQ-7-F DIODES INCORPORATED 2N7002EQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
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KBJ408G KBJ408G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
5+95.12 грн
10+49.50 грн
20+37.50 грн
Мінімальне замовлення: 5
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KBP408G DIODES INCORPORATED KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Max. off-state voltage: 0.8kV
Load current: 4A
Case: KBP
Kind of package: tube
Max. forward impulse current: 130A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: flat
Leads: flat pin
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D1213A-01T-7 DIODES INCORPORATED D1213A-01T.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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FZT600TA FZT600TA DIODES INCORPORATED FZT600A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 1850 шт:
термін постачання 14-30 дні (днів)
7+69.10 грн
12+35.00 грн
100+23.83 грн
250+21.00 грн
500+20.50 грн
Мінімальне замовлення: 7
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DMT32M5LFG-7 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
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DMT32M5LPS-13 DIODES INCORPORATED DMT32M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
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DMT32M5LPSW-13 DIODES INCORPORATED DMT32M5LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
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DMT69M5LCG-7 DIODES INCORPORATED DMT69M5LCG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
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DMT69M5LFVWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMT69M5LH3 DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
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DMTH45M5LPSWQ-13 DIODES INCORPORATED DMTH45M5LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
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DMT10H4M5LPS-13 DIODES INCORPORATED DMT10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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DMTH32M5LPSQ-13 DIODES INCORPORATED DMTH32M5LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMTH45M5LPDWQ-13 DIODES INCORPORATED DMTH45M5LPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMTH63M5LFGQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
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DMTH10H4M5LPS-13 DIODES INCORPORATED DMTH10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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MMBT6427-7-F MMBT6427-7-F DIODES INCORPORATED MMBT6427-7-F.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
на замовлення 2399 шт:
термін постачання 14-30 дні (днів)
28+16.15 грн
100+4.17 грн
123+3.39 грн
500+2.72 грн
1000+2.47 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DMG7408SFG-7 DIODES INCORPORATED DMG7408SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 66A
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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ZXTP07040DFFTA DIODES INCORPORATED ZXTP07040DFF.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 1.5W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT23F
Mounting: SMD
Frequency: 200MHz
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AP8803WTG-7 AP8803WTG-7 DIODES INCORPORATED AP8803.pdf Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
на замовлення 743 шт:
термін постачання 14-30 дні (днів)
6+87.05 грн
10+59.16 грн
25+56.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AZ1117D-ADJTRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117IH-ADJTRG1 AZ1117IH-ADJTRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117ID-ADJTRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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DNBT8105-7 DNBT8105-7 DIODES INCORPORATED ds30513.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Current gain: 100...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
на замовлення 289 шт:
термін постачання 14-30 дні (днів)
25+17.95 грн
32+13.42 грн
50+8.57 грн
100+6.76 грн
Мінімальне замовлення: 25
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DPBT8105-7 DIODES INCORPORATED ds30514.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
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BZX84C9V1Q-13-F BZX84C9V1Q-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C9V1S-7-F DIODES INCORPORATED ds30108.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C9V1T-7-F BZX84C9V1T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C9V1W-7-F DIODES INCORPORATED ds30066.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BC857AT-7-F BC857AT-7-F DIODES INCORPORATED ds30275.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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BC857AW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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B250-13-F B250-13-F DIODES INCORPORATED B220A_B260A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 332 шт:
термін постачання 14-30 дні (днів)
18+25.13 грн
22+19.00 грн
25+17.08 грн
100+12.00 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
B250A-13-F B250A-13-F DIODES INCORPORATED B220_A-B260_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Load current: 2A
Max. off-state voltage: 50V
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
18+25.13 грн
23+18.83 грн
25+17.08 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SB180-T DIODES INCORPORATED ds30116.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel
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BAS21TW-7 DIODES INCORPORATED BAS21TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS21T-7-F DIODES INCORPORATED Ds30264.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
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74HCT32S14-13 DIODES INCORPORATED 74HCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74AHCT32S14-13 DIODES INCORPORATED 74AHCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74AHCT32T14-13 DIODES INCORPORATED 74AHCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74HCT32T14-13 DIODES INCORPORATED 74HCT32.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 12500 шт:
термін постачання 14-30 дні (днів)
2500+7.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SBR10E45P5-7 DIODES INCORPORATED SBR10E45P5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Technology: SBR®
Kind of package: reel; tape
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DDZ6V8ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
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ZVN3320FTA ZVN3320FTA DIODES INCORPORATED ZVN3320F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
10+45.77 грн
12+34.83 грн
14+30.08 грн
50+19.50 грн
100+16.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ZXT13N50DE6TA DIODES INCORPORATED ZXT13N50DE6.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+23.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMP4009SPSWQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -79A; PowerDI5060-8
Case: PowerDI5060-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -79A
Drain-source voltage: -40V
Gate charge: 112nC
Application: automotive industry
Kind of channel: enhancement
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ZVP2110A ZVP2110A DIODES INCORPORATED ZVP2110A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 1845 шт:
термін постачання 14-30 дні (днів)
6+88.84 грн
10+52.08 грн
25+44.41 грн
50+39.58 грн
70+37.58 грн
100+35.50 грн
500+29.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ZVP2110ASTZ DIODES INCORPORATED ZVP2110A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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DMP1045UFY4-7 DMP1045UFY4-7 DIODES INCORPORATED DMP1045UFY4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
12+38.59 грн
16+26.08 грн
100+15.50 грн
500+11.00 грн
1000+9.67 грн
3000+8.67 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMP1045U-7 DMP1045U-7 DIODES INCORPORATED DMP1045U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
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DMP1045UQ-7 DIODES INCORPORATED DMP1045UQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
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D5V0F2U3LPQ-7B D5V0F2U3LPQ-7B DIODES INCORPORATED Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 1.5A; unidirectional; DFN1006-3; Ch: 2
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 0.65pF
Max. forward impulse current: 1.5A
Number of channels: 2
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
на замовлення 8986 шт:
термін постачання 14-30 дні (днів)
32+14.36 грн
37+11.33 грн
43+9.75 грн
57+7.33 грн
100+4.66 грн
500+4.16 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D5V0F2U3LP-7B DIODES INCORPORATED D5V0F2U3LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 1.5A; unidirectional; DFN1006-3; Ch: 2
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 0.65pF
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
Number of channels: 2
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
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DMN2992UFB4-7B DIODES INCORPORATED DMN2992UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 830mA; 1.02W; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 830mA
Power dissipation: 1.02W
Case: DFN1006-3
On-state resistance: 990mΩ
Mounting: SMD
Gate charge: 410pC
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DMN2451UFB4-7B DIODES INCORPORATED DMN2451UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 1.1W; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Power dissipation: 1.1W
Case: DFN1006-3
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 3.4nC
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DMN62D1SFB-7B DIODES INCORPORATED DMN62D1SFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 410mA; 470mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 410mA
Power dissipation: 0.47W
Case: DFN1006-3
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 1.39nC
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SMAJ48A-13-F SMAJ48A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Leakage current: 5µA
Kind of package: reel; tape
Max. forward impulse current: 5.2A
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Features of semiconductor devices: glass passivated
на замовлення 3478 шт:
термін постачання 14-30 дні (днів)
25+17.95 грн
31+13.67 грн
35+11.92 грн
100+6.85 грн
500+5.13 грн
1000+4.70 грн
2500+4.32 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
2N7002A-7 ds31360.pdf
2N7002A-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
на замовлення 1485 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.56 грн
55+7.67 грн
78+5.35 грн
100+4.58 грн
500+3.27 грн
1000+2.85 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
2N7002AQ-7 2N7002AQ.pdf
2N7002AQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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2N7002H-13 2N7002H.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
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2N7002EQ-7-F 2N7002EQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
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KBJ408G KBJ4005G_ser.pdf
KBJ408G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+95.12 грн
10+49.50 грн
20+37.50 грн
Мінімальне замовлення: 5
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KBP408G KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 130A
Max. off-state voltage: 0.8kV
Load current: 4A
Case: KBP
Kind of package: tube
Max. forward impulse current: 130A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: flat
Leads: flat pin
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D1213A-01T-7 D1213A-01T.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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FZT600TA FZT600A.pdf
FZT600TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 1850 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+69.10 грн
12+35.00 грн
100+23.83 грн
250+21.00 грн
500+20.50 грн
Мінімальне замовлення: 7
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DMT32M5LFG-7 DMT32M5LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
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DMT32M5LPS-13 DMT32M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
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DMT32M5LPSW-13 DMT32M5LPSW.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
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DMT69M5LCG-7 DMT69M5LCG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
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DMT69M5LFVWQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMT69M5LH3
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
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DMTH45M5LPSWQ-13 DMTH45M5LPSWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
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DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMTH63M5LFGQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
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DMTH10H4M5LPS-13 DMTH10H4M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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MMBT6427-7-F MMBT6427-7-F.pdf
MMBT6427-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
на замовлення 2399 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.15 грн
100+4.17 грн
123+3.39 грн
500+2.72 грн
1000+2.47 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DMG7408SFG-7 DMG7408SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 2.1W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 66A
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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ZXTP07040DFFTA ZXTP07040DFF.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 1.5W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT23F
Mounting: SMD
Frequency: 200MHz
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AP8803WTG-7 AP8803.pdf
AP8803WTG-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
на замовлення 743 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+87.05 грн
10+59.16 грн
25+56.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AZ1117D-ADJTRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117IH-ADJTRG1 AZ1117I.pdf
AZ1117IH-ADJTRG1
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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AZ1117ID-ADJTRG1 AZ1117I.pdf
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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DNBT8105-7 ds30513.pdf
DNBT8105-7
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Current gain: 100...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
на замовлення 289 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.95 грн
32+13.42 грн
50+8.57 грн
100+6.76 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
DPBT8105-7 ds30514.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
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BZX84C9V1Q-13-F BZX84Cxx_SER.pdf
BZX84C9V1Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C9V1S-7-F ds30108.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C9V1T-7-F BZX84CxxT_SER.pdf
BZX84C9V1T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C9V1W-7-F ds30066.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BC857AT-7-F ds30275.pdf
BC857AT-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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BC857AW-7-F BC856AW-BC858CW.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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B250-13-F B220A_B260A.pdf
B250-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 332 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.13 грн
22+19.00 грн
25+17.08 грн
100+12.00 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
B250A-13-F B220_A-B260_A.pdf
B250A-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Load current: 2A
Max. off-state voltage: 50V
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.13 грн
23+18.83 грн
25+17.08 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SB180-T ds30116.pdf
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel
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BAS21TW-7 BAS21TW.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS21T-7-F Ds30264.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
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74HCT32S14-13 74HCT32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74AHCT32S14-13 74AHCT32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74AHCT32T14-13 74AHCT32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74HCT32T14-13 74HCT32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 12500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+7.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SBR10E45P5-7 SBR10E45P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Technology: SBR®
Kind of package: reel; tape
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DDZ6V8ASF-7 ds31987.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
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ZVN3320FTA ZVN3320F.pdf
ZVN3320FTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+45.77 грн
12+34.83 грн
14+30.08 грн
50+19.50 грн
100+16.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ZXT13N50DE6TA ZXT13N50DE6.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+23.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMP4009SPSWQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -79A; PowerDI5060-8
Case: PowerDI5060-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -79A
Drain-source voltage: -40V
Gate charge: 112nC
Application: automotive industry
Kind of channel: enhancement
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ZVP2110A ZVP2110A.pdf
ZVP2110A
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 1845 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+88.84 грн
10+52.08 грн
25+44.41 грн
50+39.58 грн
70+37.58 грн
100+35.50 грн
500+29.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ZVP2110ASTZ ZVP2110A.pdf
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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DMP1045UFY4-7 DMP1045UFY4.pdf
DMP1045UFY4-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+38.59 грн
16+26.08 грн
100+15.50 грн
500+11.00 грн
1000+9.67 грн
3000+8.67 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMP1045U-7 DMP1045U.pdf
DMP1045U-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
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DMP1045UQ-7 DMP1045UQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
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D5V0F2U3LPQ-7B
D5V0F2U3LPQ-7B
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 1.5A; unidirectional; DFN1006-3; Ch: 2
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 0.65pF
Max. forward impulse current: 1.5A
Number of channels: 2
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
на замовлення 8986 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.36 грн
37+11.33 грн
43+9.75 грн
57+7.33 грн
100+4.66 грн
500+4.16 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D5V0F2U3LP-7B D5V0F2U3LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 1.5A; unidirectional; DFN1006-3; Ch: 2
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 0.65pF
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
Number of channels: 2
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
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DMN2992UFB4-7B DMN2992UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 830mA; 1.02W; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 830mA
Power dissipation: 1.02W
Case: DFN1006-3
On-state resistance: 990mΩ
Mounting: SMD
Gate charge: 410pC
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DMN2451UFB4-7B DMN2451UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 1.1W; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Power dissipation: 1.1W
Case: DFN1006-3
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 3.4nC
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DMN62D1SFB-7B DMN62D1SFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 410mA; 470mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 410mA
Power dissipation: 0.47W
Case: DFN1006-3
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 1.39nC
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SMAJ48A-13-F SMAJ_ser.pdf
SMAJ48A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Leakage current: 5µA
Kind of package: reel; tape
Max. forward impulse current: 5.2A
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Features of semiconductor devices: glass passivated
на замовлення 3478 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.95 грн
31+13.67 грн
35+11.92 грн
100+6.85 грн
500+5.13 грн
1000+4.70 грн
2500+4.32 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
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