Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74501) > Сторінка 1193 з 1242
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AP22814BM8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Active logical level: low Output current: 3A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: MSOP8 Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 50mΩ Mounting: SMD Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| AP22814BSN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Active logical level: low Output current: 3A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: U-DFN2020-6 Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 50mΩ Mounting: SMD Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22816BKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Output current: 1A Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 95mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22818AKAWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Mounting: SMD Case: TSOT25 On-state resistance: 95mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP2281-1FMG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Mounting: SMD Case: U-DFN2018-6 On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Kind of output: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
AP2281-1WG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AP2281-3FMG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Mounting: SMD Case: DFN2018-6 On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 1.5...6V DC Active logical level: high Kind of output: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22811AM8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: MSOP8 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| AP22816AKCWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 1A Number of channels: 1 Mounting: SMD Case: TSOT25 On-state resistance: 95mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22816BKAWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Output current: 1A Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 95mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22817AKAWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Number of channels: 1 Mounting: SMD Case: TSOT25 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Output current: 1.5A Operating temperature: -40...85°C Kind of integrated circuit: high-side; USB switch On-state resistance: 95mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22817AKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Number of channels: 1 Mounting: SMD Case: TSOT25 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Output current: 1.5A Operating temperature: -40...85°C Kind of integrated circuit: high-side; USB switch On-state resistance: 95mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22818AKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Mounting: SMD Case: TSOT25 On-state resistance: 95mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22818AKWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Mounting: SMD Case: TSOT25 On-state resistance: 95mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22818BKAWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Output current: 2A Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 95mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22818BKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Output current: 2A Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 95mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP22818BKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low Output current: 2A Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 95mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
DF02M | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 50A Case: DFM Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: THT |
на замовлення 573 шт: термін постачання 14-30 дні (днів) |
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B140WS-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape; 235mW Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Capacitance: 125pF Max. forward voltage: 0.62V Leakage current: 50µA Max. forward impulse current: 3A Kind of package: reel; tape Power dissipation: 235mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES3DB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape Mounting: SMD Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying Reverse recovery time: 25ns Max. forward voltage: 0.9V |
на замовлення 1238 шт: термін постачання 14-30 дні (днів) |
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ES3D-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A Mounting: SMD Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Capacitance: 45pF Type of diode: rectifying Reverse recovery time: 25ns Max. forward impulse current: 100A Max. forward voltage: 0.9V |
на замовлення 2670 шт: термін постачання 14-30 дні (днів) |
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SD101AWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 60V; 15mA; 1ns; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 60V Load current: 15mA Reverse recovery time: 1ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1V Kind of package: reel; tape Power dissipation: 0.2W Max. forward impulse current: 50mA |
на замовлення 103 шт: термін постачання 14-30 дні (днів) |
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SD101AW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 60V; 15mA; 1ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 60V Load current: 15mA Semiconductor structure: single diode Capacitance: 2pF Max. forward voltage: 1V Max. forward impulse current: 2A Reverse recovery time: 1ns Kind of package: reel; tape Power dissipation: 0.4W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16Q-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| B130LB-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Capacitance: 90pF Max. forward voltage: 0.445V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 2034 шт: термін постачання 14-30 дні (днів) |
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SMAJ13A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 254 шт: термін постачання 14-30 дні (днів) |
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SMAJ13AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| P4SMAJ13ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAJ150A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 1.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2787 шт: термін постачання 14-30 дні (днів) |
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SMAJ150CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 167÷185V; 1.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 1.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2002 шт: термін постачання 14-30 дні (днів) |
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| BC857BLP-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMSZ5250B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 20V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 580 шт: термін постачання 14-30 дні (днів) |
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BZX84C15-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 7038 шт: термін постачання 14-30 дні (днів) |
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BZX84C15Q-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C15S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; SOT363; double independent; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Case: SOT363 Semiconductor structure: double independent Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D3V3F4U6S-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 5A; 0.2W; unidirectional; ESD; SOT363; Ch: 4 Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: unidirectional Version: ESD Mounting: SMD Case: SOT363 Max. off-state voltage: 3.3V Leakage current: 0.2µA Number of channels: 4 Application: HDMI; USB Kind of package: reel; tape Max. forward impulse current: 5A Peak pulse power dissipation: 0.2W Capacitance: 0.85pF |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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SBRT5A50SA-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR® Type of diode: rectifying Max. forward impulse current: 70A Semiconductor structure: single diode Mounting: SMD Case: SMA Max. off-state voltage: 50V Kind of package: reel; tape Max. forward voltage: 0.46V Technology: SBR® Load current: 5A |
на замовлення 1480 шт: термін постачання 14-30 дні (днів) |
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FCX1047ATA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89 Collector current: 4A Mounting: SMD Manufacturer standard package: 1000pcs. Collector-emitter voltage: 10V Power dissipation: 2W Polarisation: bipolar Pulsed collector current: 20A Type of transistor: NPN Current gain: 60...1200 Kind of package: reel; tape Case: SOT89 Frequency: 150MHz |
на замовлення 551 шт: термін постачання 14-30 дні (днів) |
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| ES3C-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 150V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 0.9V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ES3CB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 150V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.9V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMPH4015SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Mounting: SMD Polarisation: unipolar Pulsed drain current: -85A Drain current: -8.1A Drain-source voltage: -40V Gate charge: 91nC On-state resistance: 15mΩ Power dissipation: 1.8W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: SO8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| DMPH4025SFVWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Mounting: SMD Pulsed drain current: -80A Power dissipation: 2.3W Gate charge: 38.6nC Polarisation: unipolar Drain current: -7.3A Kind of channel: enhancement Drain-source voltage: -40V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 45mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4029LFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Mounting: SMD Polarisation: unipolar Pulsed drain current: -88A Drain current: -6.7A Drain-source voltage: -40V Gate charge: 34nC On-state resistance: 45mΩ Power dissipation: 2.8W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4011SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -316A Drain current: -56A Drain-source voltage: -40V Gate charge: 104nC On-state resistance: 19mΩ Power dissipation: 3.7W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4011SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -316A Drain current: -56A Drain-source voltage: -40V Gate charge: 104nC On-state resistance: 19mΩ Power dissipation: 3.7W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
DMPH4013SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -120A Drain current: -40A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 23mΩ Power dissipation: 3.7W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
DMPH4013SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -120A Drain current: -40A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 23mΩ Power dissipation: 3.7W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| DMPH4013SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -277A Drain current: -49A Drain-source voltage: -40V Gate charge: 87nC On-state resistance: 23mΩ Power dissipation: 3.3W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI5060-8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4015SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -100A Drain current: -10A Drain-source voltage: -40V Gate charge: 91nC On-state resistance: 15mΩ Power dissipation: 3.3W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4015SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -100A Drain current: -10A Drain-source voltage: -40V Gate charge: 91nC On-state resistance: 15mΩ Power dissipation: 3.3W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4015SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W Mounting: SMD Polarisation: unipolar Pulsed drain current: -100A Drain current: -9A Drain-source voltage: -40V Gate charge: 91nC On-state resistance: 15mΩ Power dissipation: 2.6W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI5060-8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
DMPH4015SSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Mounting: SMD Polarisation: unipolar Pulsed drain current: -85A Drain current: -8.1A Drain-source voltage: -40V Gate charge: 91nC On-state resistance: 15mΩ Power dissipation: 1.8W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: SO8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| DMPH4023SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain current: -35A Drain-source voltage: -40V Gate charge: 18.7nC On-state resistance: 26mΩ Power dissipation: 3.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4023SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain current: -35A Drain-source voltage: -40V Gate charge: 18.7nC On-state resistance: 26mΩ Power dissipation: 3.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4025SFVWQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Mounting: SMD Pulsed drain current: -80A Power dissipation: 2.3W Gate charge: 38.6nC Polarisation: unipolar Drain current: -7.3A Kind of channel: enhancement Drain-source voltage: -40V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 45mΩ |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4029LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Mounting: SMD Polarisation: unipolar Pulsed drain current: -88A Drain current: -6.7A Drain-source voltage: -40V Gate charge: 34nC On-state resistance: 45mΩ Power dissipation: 2.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4029LFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Mounting: SMD Polarisation: unipolar Pulsed drain current: -88A Drain current: -6.7A Drain-source voltage: -40V Gate charge: 34nC On-state resistance: 45mΩ Power dissipation: 2.8W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| DMPH4029LFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Mounting: SMD Polarisation: unipolar Pulsed drain current: -88A Drain current: -6.7A Drain-source voltage: -40V Gate charge: 34nC On-state resistance: 45mΩ Power dissipation: 2.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
DMP4051LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252 Case: TO252 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 8.9W Polarisation: unipolar Drain current: -8.4A Kind of channel: enhancement Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 85mΩ |
на замовлення 1420 шт: термін постачання 14-30 дні (днів) |
|
| AP22814BM8-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Active logical level: low
Output current: 3A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: MSOP8
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 50mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Active logical level: low
Output current: 3A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: MSOP8
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 50mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AP22814BSN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Active logical level: low
Output current: 3A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-DFN2020-6
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 50mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Active logical level: low
Output current: 3A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-DFN2020-6
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 50mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22816BKBWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 1A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 1A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22818AKAWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP2281-1FMG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP2281-1WG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
товару немає в наявності
В кошику
од. на суму грн.
| AP2281-3FMG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22811AM8-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AP22816AKCWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22816BKAWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 1A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 1A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22817AKAWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Number of channels: 1
Mounting: SMD
Case: TSOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Output current: 1.5A
Operating temperature: -40...85°C
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Number of channels: 1
Mounting: SMD
Case: TSOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Output current: 1.5A
Operating temperature: -40...85°C
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22817AKBWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Number of channels: 1
Mounting: SMD
Case: TSOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Output current: 1.5A
Operating temperature: -40...85°C
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Number of channels: 1
Mounting: SMD
Case: TSOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Output current: 1.5A
Operating temperature: -40...85°C
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
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Мінімальне замовлення: 3000 шт
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| AP22818AKBWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| AP22818AKWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| AP22818BKAWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22818BKBWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| AP22818BKEWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| DF02M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.48 грн |
| 19+ | 22.45 грн |
| 50+ | 13.40 грн |
| 100+ | 10.72 грн |
| 250+ | 9.05 грн |
| B140WS-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.62V
Leakage current: 50µA
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.62V
Leakage current: 50µA
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
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| ES3DB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.9V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.9V
на замовлення 1238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.64 грн |
| 18+ | 24.55 грн |
| 100+ | 19.27 грн |
| 150+ | 18.68 грн |
| 250+ | 18.01 грн |
| 500+ | 17.09 грн |
| 750+ | 16.50 грн |
| ES3D-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward impulse current: 100A
Max. forward voltage: 0.9V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward impulse current: 100A
Max. forward voltage: 0.9V
на замовлення 2670 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.07 грн |
| 25+ | 17.34 грн |
| 100+ | 14.83 грн |
| 500+ | 13.07 грн |
| 1000+ | 12.40 грн |
| SD101AWS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 50mA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 50mA
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.68 грн |
| 21+ | 20.19 грн |
| 25+ | 16.92 грн |
| 50+ | 14.66 грн |
| 100+ | 12.82 грн |
| SD101AW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.4W
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| BAS16Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
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| BAS16Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
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| B130LB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 90pF
Max. forward voltage: 0.445V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 90pF
Max. forward voltage: 0.445V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 2034 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.26 грн |
| 22+ | 19.77 грн |
| 24+ | 17.51 грн |
| 100+ | 11.23 грн |
| 500+ | 8.88 грн |
| 1000+ | 7.79 грн |
| SMAJ13A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 254 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.87 грн |
| 26+ | 16.59 грн |
| 31+ | 13.66 грн |
| 100+ | 8.13 грн |
| SMAJ13AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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| P4SMAJ13ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ150A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2787 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.87 грн |
| 25+ | 17.43 грн |
| 29+ | 14.83 грн |
| 100+ | 9.32 грн |
| 203+ | 4.73 грн |
| 558+ | 4.47 грн |
| SMAJ150CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2002 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.65 грн |
| 30+ | 14.41 грн |
| 34+ | 12.57 грн |
| 100+ | 8.63 грн |
| 500+ | 7.12 грн |
| 1000+ | 6.37 грн |
| BC857BLP-7 |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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| MMSZ5250B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 580 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.22 грн |
| 81+ | 5.19 грн |
| 98+ | 4.31 грн |
| 154+ | 2.73 грн |
| BZX84C15-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 7038 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.02 грн |
| 91+ | 4.61 грн |
| 114+ | 3.69 грн |
| 126+ | 3.33 грн |
| 500+ | 2.58 грн |
| 616+ | 1.56 грн |
| 1693+ | 1.47 грн |
| BZX84C15Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZX84C15S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOT363; double independent; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOT363; double independent; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
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| D3V3F4U6S-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.2W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 3.3V
Leakage current: 0.2µA
Number of channels: 4
Application: HDMI; USB
Kind of package: reel; tape
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2W
Capacitance: 0.85pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.2W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 3.3V
Leakage current: 0.2µA
Number of channels: 4
Application: HDMI; USB
Kind of package: reel; tape
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2W
Capacitance: 0.85pF
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.67 грн |
| SBRT5A50SA-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR®
Type of diode: rectifying
Max. forward impulse current: 70A
Semiconductor structure: single diode
Mounting: SMD
Case: SMA
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Technology: SBR®
Load current: 5A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR®
Type of diode: rectifying
Max. forward impulse current: 70A
Semiconductor structure: single diode
Mounting: SMD
Case: SMA
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Technology: SBR®
Load current: 5A
на замовлення 1480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.85 грн |
| 29+ | 14.49 грн |
| 50+ | 12.15 грн |
| 100+ | 11.31 грн |
| 250+ | 10.30 грн |
| 500+ | 9.63 грн |
| 1000+ | 9.47 грн |
| FCX1047ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Collector current: 4A
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 10V
Power dissipation: 2W
Polarisation: bipolar
Pulsed collector current: 20A
Type of transistor: NPN
Current gain: 60...1200
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Collector current: 4A
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 10V
Power dissipation: 2W
Polarisation: bipolar
Pulsed collector current: 20A
Type of transistor: NPN
Current gain: 60...1200
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
на замовлення 551 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.18 грн |
| 10+ | 42.06 грн |
| 100+ | 27.90 грн |
| 250+ | 24.13 грн |
| 500+ | 23.12 грн |
| ES3C-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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| ES3CB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
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| DMPH4015SSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
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Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4025SFVWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Pulsed drain current: -80A
Power dissipation: 2.3W
Gate charge: 38.6nC
Polarisation: unipolar
Drain current: -7.3A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 45mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Pulsed drain current: -80A
Power dissipation: 2.3W
Gate charge: 38.6nC
Polarisation: unipolar
Drain current: -7.3A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 45mΩ
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Мінімальне замовлення: 3000 шт
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од. на суму грн.
| DMPH4029LFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMPH4011SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4011SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4013SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4013SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4013SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -277A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 87nC
On-state resistance: 23mΩ
Power dissipation: 3.3W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -277A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 87nC
On-state resistance: 23mΩ
Power dissipation: 3.3W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4015SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4015SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -10A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4015SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 2.6W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 2.6W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4015SSSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -85A
Drain current: -8.1A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 15mΩ
Power dissipation: 1.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4023SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4023SK3Q-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 18.7nC
On-state resistance: 26mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4025SFVWQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Pulsed drain current: -80A
Power dissipation: 2.3W
Gate charge: 38.6nC
Polarisation: unipolar
Drain current: -7.3A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 45mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Pulsed drain current: -80A
Power dissipation: 2.3W
Gate charge: 38.6nC
Polarisation: unipolar
Drain current: -7.3A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 45mΩ
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMPH4029LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMPH4029LFG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMPH4029LFGQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP4051LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 8.9W
Polarisation: unipolar
Drain current: -8.4A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 8.9W
Polarisation: unipolar
Drain current: -8.4A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
на замовлення 1420 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.06 грн |
| 12+ | 36.44 грн |
| 25+ | 32.76 грн |
| 50+ | 30.33 грн |
| 64+ | 15.00 грн |
| 176+ | 14.16 грн |





















