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ES3B-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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PAM2861CBR PAM2861CBR DIODES INCORPORATED PAM2861.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; SOT89-5; SMD; Ch: 1
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT89-5
Output current: 1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 6...40V DC
Kind of package: reel; tape
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
6+80.44 грн
10+56.23 грн
25+49.52 грн
50+46.16 грн
100+44.48 грн
250+42.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMBJ18A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ18AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ85CA-13-F SMCJ85CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ES1G-13-F ES1G-13-F DIODES INCORPORATED ds14001.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 20pF
на замовлення 1162 шт:
термін постачання 14-30 дні (днів)
20+23.50 грн
29+14.60 грн
50+10.74 грн
100+9.57 грн
500+7.81 грн
1000+7.13 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
FES1GE DIODES INCORPORATED FES1GE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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AL9910AS-13 AL9910AS-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 10V DC
Efficiency: 90%
на замовлення 1315 шт:
термін постачання 14-30 дні (днів)
5+98.52 грн
10+67.14 грн
25+59.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AL9910A-5S-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; 10mA; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 10mA
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 20...500V DC
Efficiency: 90%
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SMAJ30CA-13-F SMAJ30CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3959 шт:
термін постачання 14-30 дні (днів)
25+18.08 грн
31+13.76 грн
36+11.92 грн
50+8.48 грн
100+7.47 грн
250+6.46 грн
500+5.96 грн
1000+5.46 грн
3000+5.04 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
FCX558TA FCX558TA DIODES INCORPORATED FCX558.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 700mW; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
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MMSZ5237B-7-F MMSZ5237B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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MMSZ5237BS-7-F MMSZ5237BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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ZTX458 DIODES INCORPORATED ZTX458.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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ZTX458STZ
+1
 		ZTX458STZ DIODES INCORPORATED ZTX458.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
на замовлення 1963 шт:
термін постачання 14-30 дні (днів)
6+76.82 грн
11+39.95 грн
100+28.28 грн
500+21.65 грн
1000+20.31 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMBJ51A-13-F SMBJ51A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ51AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMAJ54ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BCX54TA BCX54TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 870 шт:
термін постачання 14-30 дні (днів)
16+28.92 грн
26+16.70 грн
100+10.19 грн
500+7.13 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BCX5410TA BCX5410TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 45V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
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BCX5416TA BCX5416TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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FZT788BTA DIODES INCORPORATED FZT788B.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 3A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 8A
Current gain: 150...500
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ZTX788B DIODES INCORPORATED ZTX788B.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 15V; 3A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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DDTC123EUA-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123ECAQ-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Application: automotive industry
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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BCP5510TA BCP5510TA DIODES INCORPORATED BCP54_55_56.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 63...160
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
21+21.69 грн
34+12.42 грн
100+8.12 грн
500+6.14 грн
1000+5.53 грн
2000+5.03 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
AS339MTR-G1 AS339MTR-G1 DIODES INCORPORATED AS339.pdf Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; SMT; SO14; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 4
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Kind of comparator: precision
на замовлення 3337 шт:
термін постачання 14-30 дні (днів)
15+31.63 грн
25+17.46 грн
30+14.27 грн
100+10.57 грн
250+8.81 грн
500+8.64 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
AS331KTR-G1 AS331KTR-G1 DIODES INCORPORATED AS331.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SOT25
Mounting: SMT
Kind of comparator: low-power
на замовлення 2770 шт:
термін постачання 14-30 дні (днів)
30+15.36 грн
36+11.75 грн
41+10.32 грн
48+8.90 грн
100+7.30 грн
250+6.63 грн
500+6.38 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
ZXTD718MCTA ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2674 шт:
термін постачання 14-30 дні (днів)
8+58.75 грн
10+48.26 грн
100+34.16 грн
500+26.52 грн
1000+26.19 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DDZ9685-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
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DDZ9685Q-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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DMN3008SCP10-7 DIODES INCORPORATED DMN3008SCP10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
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DMN3009LFVQ-13 DIODES INCORPORATED DMN3009LFVQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 2W; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 70A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 2W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
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DMN3018SFGQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 21mΩ
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 6nC
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DMN3069L-7 DIODES INCORPORATED DMN3069L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.3W; SOT23
Drain-source voltage: 30V
Case: SOT23
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 1.3W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 4.3nC
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DMN33D8LTQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523
Drain-source voltage: 30V
Drain current: 0.2A
Case: SOT523
Polarisation: unipolar
On-state resistance: 5Ω
Power dissipation: 0.3W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 0.55nC
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ZTX795A DIODES INCORPORATED ZTX795A.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 140V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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74LVC244AQ20-13 DIODES INCORPORATED 74LVC244A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Kind of output: push-pull
Supply voltage: 1.65...3.6V DC
Number of channels: 9
Number of inputs: 9
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74LVC244AT20-13 74LVC244AT20-13 DIODES INCORPORATED 74LVC244A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: LVC
Mounting: SMD
Kind of output: 3-state
Quiescent current: 40µA
Supply voltage: 1.65...3.6V DC
Number of channels: 8
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DMG2307LQ-7 DMG2307LQ-7 DIODES INCORPORATED DMG2307LQ_Rev2.3_Feb2022.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
14+32.54 грн
20+21.99 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
FL2400022 DIODES INCORPORATED FL.pdf Category: SMD ceramic filters and resonators
Description: Resonator: ceramic; 24MHz; SMD; 3.2x2.5mm; -25÷85°C; 10pF; 50Ω
Type of resonator: ceramic
Mounting: SMD
Operating temperature: -25...85°C
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
Frequency: 24MHz
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+26.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DF04M DF04M DIODES INCORPORATED DF005_10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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GBU1006 GBU1006 DIODES INCORPORATED GBU10_ser.pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Electrical mounting: THT
Type of bridge rectifier: single-phase
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Case: GBU
Leads: flat pin
Load current: 10A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 220A
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
4+139.19 грн
5+103.23 грн
10+89.80 грн
20+78.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AP3015AKTR-G1 AP3015AKTR-G1 DIODES INCORPORATED AP3015x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output voltage: 1.23...34V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 81%
на замовлення 1101 шт:
термін постачання 14-30 дні (днів)
12+39.77 грн
16+26.60 грн
25+23.75 грн
100+20.73 грн
250+19.39 грн
500+18.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMN3032LFDBQ-7 DIODES INCORPORATED DMN3032LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN3032LFDBQ-13 DIODES INCORPORATED DMN3032LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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1N4003G-T 1N4003G-T DIODES INCORPORATED 1N4001G_ser.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 8pF
Reverse recovery time: 2µs
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
36+12.65 грн
55+7.72 грн
100+5.30 грн
500+4.08 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
DMP3050LVT-7 DMP3050LVT-7 DIODES INCORPORATED DMP3050LVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3050LVTQ-7 DIODES INCORPORATED DMP3050LVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3050LSS-13 DMP3050LSS-13 DIODES INCORPORATED DMP3050LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DXTP03140BFG-7 DIODES INCORPORATED DXTP03140BFG.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.07W; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.07W
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
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ZXTP23140BFHTA DIODES INCORPORATED ZXTP23140BFH.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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BAV170T-7-F BAV170T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2520 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
72+5.87 грн
75+5.62 грн
100+4.41 грн
500+3.63 грн
1000+3.31 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAV170Q-13-F BAV170Q-13-F DIODES INCORPORATED BAV170.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
на замовлення 9750 шт:
термін постачання 14-30 дні (днів)
200+2.16 грн
500+1.91 грн
2500+1.71 грн
Мінімальне замовлення: 200
В кошику  од. на суму  грн.
BAV170-7-F BAV170-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
на замовлення 475 шт:
термін постачання 14-30 дні (днів)
50+9.04 грн
120+3.52 грн
151+2.79 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAV170Q-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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KBP304G DIODES INCORPORATED KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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ES3B-13-F ds14003.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 0.9V
Kind of package: reel; tape
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PAM2861CBR PAM2861.pdf
PAM2861CBR
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; SOT89-5; SMD; Ch: 1
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT89-5
Output current: 1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 6...40V DC
Kind of package: reel; tape
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+80.44 грн
10+56.23 грн
25+49.52 грн
50+46.16 грн
100+44.48 грн
250+42.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMBJ18A-13-F ds19002.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ18AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ85CA-13-F SMCJ_ser.pdf
SMCJ85CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ES1G-13-F ds14001.pdf
ES1G-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 20pF
на замовлення 1162 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.50 грн
29+14.60 грн
50+10.74 грн
100+9.57 грн
500+7.81 грн
1000+7.13 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
FES1GE FES1GE.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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AL9910AS-13 AL9910_A.pdf
AL9910AS-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 10V DC
Efficiency: 90%
на замовлення 1315 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+98.52 грн
10+67.14 грн
25+59.59 грн
Мінімальне замовлення: 5
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AL9910A-5S-13 AL9910_A.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; 10mA; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 10mA
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 20...500V DC
Efficiency: 90%
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SMAJ30CA-13-F SMAJ_ser.pdf
SMAJ30CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3959 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.08 грн
31+13.76 грн
36+11.92 грн
50+8.48 грн
100+7.47 грн
250+6.46 грн
500+5.96 грн
1000+5.46 грн
3000+5.04 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
FCX558TA FCX558.pdf
FCX558TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 700mW; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
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MMSZ5237B-7-F mmsz52xxb_Ser.pdf
MMSZ5237B-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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MMSZ5237BS-7-F mmsz52xxbs_ser.pdf
MMSZ5237BS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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ZTX458 ZTX458.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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ZTX458STZ ZTX458.pdf
ZTX458STZ
+1
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
на замовлення 1963 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+76.82 грн
11+39.95 грн
100+28.28 грн
500+21.65 грн
1000+20.31 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMBJ51A-13-F SMBJ_ser.pdf
SMBJ51A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ51AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMAJ54ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BCX54TA BCX54x-DTE.pdf
BCX54TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 870 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.92 грн
26+16.70 грн
100+10.19 грн
500+7.13 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BCX5410TA BCX54x-DTE.pdf
BCX5410TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 45V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
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BCX5416TA BCX54x-DTE.pdf
BCX5416TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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FZT788BTA FZT788B.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 3A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 8A
Current gain: 150...500
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ZTX788B ZTX788B.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 15V; 3A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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DDTC123EUA-7-F ds30321.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123ECAQ-7-F ds30329.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Application: automotive industry
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123ECA-7-F ds30329.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123EE-7-F ds30313.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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BCP5510TA BCP54_55_56.pdf
BCP5510TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 63...160
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.69 грн
34+12.42 грн
100+8.12 грн
500+6.14 грн
1000+5.53 грн
2000+5.03 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
AS339MTR-G1 AS339.pdf
AS339MTR-G1
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; SMT; SO14; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 4
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Kind of comparator: precision
на замовлення 3337 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+31.63 грн
25+17.46 грн
30+14.27 грн
100+10.57 грн
250+8.81 грн
500+8.64 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
AS331KTR-G1 AS331.pdf
AS331KTR-G1
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SOT25
Mounting: SMT
Kind of comparator: low-power
на замовлення 2770 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.36 грн
36+11.75 грн
41+10.32 грн
48+8.90 грн
100+7.30 грн
250+6.63 грн
500+6.38 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2674 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+58.75 грн
10+48.26 грн
100+34.16 грн
500+26.52 грн
1000+26.19 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DDZ9685-7 ds30410.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
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DDZ9685Q-7 ds30410.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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DMN3008SCP10-7 DMN3008SCP10.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
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DMN3009LFVQ-13 DMN3009LFVQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 2W; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 70A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 2W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
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DMN3018SFGQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 21mΩ
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 6nC
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DMN3069L-7 DMN3069L.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.3W; SOT23
Drain-source voltage: 30V
Case: SOT23
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 1.3W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 4.3nC
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DMN33D8LTQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523
Drain-source voltage: 30V
Drain current: 0.2A
Case: SOT523
Polarisation: unipolar
On-state resistance: 5Ω
Power dissipation: 0.3W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 0.55nC
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ZTX795A ZTX795A.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 140V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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SMBJ30CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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74LVC244AQ20-13 74LVC244A.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Kind of output: push-pull
Supply voltage: 1.65...3.6V DC
Number of channels: 9
Number of inputs: 9
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74LVC244AT20-13 74LVC244A.pdf
74LVC244AT20-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: LVC
Mounting: SMD
Kind of output: 3-state
Quiescent current: 40µA
Supply voltage: 1.65...3.6V DC
Number of channels: 8
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DMG2307LQ-7 DMG2307LQ_Rev2.3_Feb2022.pdf
DMG2307LQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+32.54 грн
20+21.99 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
FL2400022 FL.pdf
Виробник: DIODES INCORPORATED
Category: SMD ceramic filters and resonators
Description: Resonator: ceramic; 24MHz; SMD; 3.2x2.5mm; -25÷85°C; 10pF; 50Ω
Type of resonator: ceramic
Mounting: SMD
Operating temperature: -25...85°C
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
Frequency: 24MHz
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+26.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DF04M DF005_10M.pdf
DF04M
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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GBU1006 description GBU10_ser.pdf
GBU1006
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Electrical mounting: THT
Type of bridge rectifier: single-phase
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Case: GBU
Leads: flat pin
Load current: 10A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 220A
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+139.19 грн
5+103.23 грн
10+89.80 грн
20+78.05 грн
Мінімальне замовлення: 4
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AP3015AKTR-G1 AP3015x-DTE.pdf
AP3015AKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output voltage: 1.23...34V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 81%
на замовлення 1101 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+39.77 грн
16+26.60 грн
25+23.75 грн
100+20.73 грн
250+19.39 грн
500+18.55 грн
Мінімальне замовлення: 12
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DMN3032LFDBQ-7 DMN3032LFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN3032LFDBQ-13 DMN3032LFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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1N4003G-T 1N4001G_ser.pdf
1N4003G-T
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 8pF
Reverse recovery time: 2µs
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.65 грн
55+7.72 грн
100+5.30 грн
500+4.08 грн
Мінімальне замовлення: 36
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DMP3050LVT-7 DMP3050LVT.pdf
DMP3050LVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3050LVTQ-7 DMP3050LVTQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3050LSS-13 DMP3050LSS.pdf
DMP3050LSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DXTP03140BFG-7 DXTP03140BFG.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.07W; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.07W
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
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ZXTP23140BFHTA ZXTP23140BFH.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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BAV170T-7-F ds30258.pdf
BAV170T-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2520 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.23 грн
72+5.87 грн
75+5.62 грн
100+4.41 грн
500+3.63 грн
1000+3.31 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAV170Q-13-F BAV170.pdf
BAV170Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
на замовлення 9750 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
200+2.16 грн
500+1.91 грн
2500+1.71 грн
Мінімальне замовлення: 200
В кошику  од. на суму  грн.
BAV170-7-F ds30234.pdf
BAV170-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
на замовлення 475 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.04 грн
120+3.52 грн
151+2.79 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAV170Q-7-F ds30234.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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KBP304G KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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