Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78531) > Сторінка 1300 з 1309
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N5406G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
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BSS138K-13 | DIODES INCORPORATED |
![]() Description: BSS138K-13 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BSS138K-7 | DIODES INCORPORATED |
![]() Description: BSS138K-7 |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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BSS138DWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BSS138DWK-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BSS138DWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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DMP6110SFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP6110SFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP6110SFDFQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP6110SFDFQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP10H400SK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8A Power dissipation: 42W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 1356 шт: термін постачання 21-30 дні (днів) |
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P4SMAJ70ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ZXTP4003GTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 2W Case: SOT223 Pulsed collector current: 3A Current gain: 60...133 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BC807-16W-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 60...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ULN2003V12T16-13 | DIODES INCORPORATED |
![]() Description: ULN2003V12T16-13 |
на замовлення 67500 шт: термін постачання 21-30 дні (днів) |
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GBJ2008-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 20A Max. forward impulse current: 0.24kA Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated Case: GBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MJD32CQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Application: automotive industry Current gain: 10...50 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MJD32C-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: DPAK; TO252 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Current gain: 10...50 Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MJD32CUQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Pulsed collector current: 5A Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP45H4D9HK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -12A Power dissipation: 41W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 13.7nC Drain current: -3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP45H4D9HJ3 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -22.4A Power dissipation: 41W Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13.7nC Drain current: -3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMP45H21DHE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -1.2A Power dissipation: 8W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 21Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 4.2nC Drain current: -0.4A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP610DL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 560pC Drain current: -130mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMP45H150DHE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -0.45A Power dissipation: 13.9W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 150Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 1.8nC Drain current: -200mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP510DL-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Pulsed drain current: -1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Drain current: -130mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP610DL-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 560pC Drain current: -130mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP3056LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -5.1A On-state resistance: 65mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 1964 шт: термін постачання 21-30 дні (днів) |
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BZX84C16W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
на замовлення 1400 шт: термін постачання 21-30 дні (днів) |
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BZX84C16-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 16V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 819 шт: термін постачання 21-30 дні (днів) |
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BZX84C16S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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BZX84C16Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 16V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AZ1117H-1.5TRE1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Manufacturer series: AZ1117 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT223 Tolerance: ±1% Output voltage: 1.5V Output current: 1A Voltage drop: 1.25V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.5...10V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCW68HTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5048 шт: термін постачання 21-30 дні (днів) |
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ZXMP6A16KTC | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.75A Power dissipation: 4.24W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1929 шт: термін постачання 21-30 дні (днів) |
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BSS84WQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
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BSS8402DWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BSS84-13-F | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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MMBTA05-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMBTA05Q-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 10000pcs. Pulsed collector current: 1A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN1004UFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD Drain-source voltage: 12V Drain current: 55A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: PowerDI®3333-8 |
на замовлення 212 шт: термін постачання 21-30 дні (днів) |
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FES1JE | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 160000 шт: термін постачання 21-30 дні (днів) |
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MBRD20150CT-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 150V; 10Ax2 Type of diode: Schottky rectifying Case: TO252/DPAK Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Leakage current: 10mA Max. forward impulse current: 170A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRD10200CT-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252/DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.91V Max. forward impulse current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMCJ20CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 46.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXTR2005ZQ-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 15mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Application: automotive industry Input voltage: 10...100V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP7381-50Y-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.15A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 Voltage drop: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXTP25020DFLTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 290MHz |
на замовлення 1970 шт: термін постачання 21-30 дні (днів) |
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ZXMN10B08E6TA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.1W Case: SOT26 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 1.5A On-state resistance: 0.5Ω Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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DMN2004WKQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Drain current: 0.39A On-state resistance: 0.9Ω Application: automotive industry Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN2004WK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Drain current: 0.39A On-state resistance: 0.9Ω Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SMB5926B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
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В кошику од. на суму грн. | ||||||||||||||
DMN2710UTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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TLV431AE5TA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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SMBJ180A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 200÷220V; 2.06A; unidirectional; SMB; reel,tape Mounting: SMD Max. off-state voltage: 180V Semiconductor structure: unidirectional Max. forward impulse current: 2.06A Breakdown voltage: 200...220V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.6kW Case: SMB |
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В кошику од. на суму грн. | |||||||||||||||
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ZHCS506TA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 60V Load current: 0.5A Semiconductor structure: single diode Capacitance: 20pF Max. forward impulse current: 2.5A Kind of package: reel; tape Power dissipation: 0.33W |
на замовлення 626 шт: термін постачання 21-30 дні (днів) |
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ZHCS500TA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 6.75A Kind of package: reel; tape Max. forward voltage: 0.55V |
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В кошику од. на суму грн. | ||||||||||||||
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ZHCS500QTA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 20pF Max. forward impulse current: 6.75A Kind of package: reel; tape Power dissipation: 0.33W Max. forward voltage: 1.05V Reverse recovery time: 10ns Leakage current: 40µA Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||
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ZHCS506QTA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 60V Load current: 0.5A Semiconductor structure: single diode Capacitance: 20pF Max. forward impulse current: 5.5A Kind of package: reel; tape Power dissipation: 0.33W Max. forward voltage: 1.35V Reverse recovery time: 10ns Leakage current: 40µA Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||
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DMG1012T-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.28W Case: SOT523 Gate-source voltage: ±6V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 736.6pC Pulsed drain current: 3A |
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APX803L20-31SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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1N5406G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1200+ | 7.35 грн |
BSS138K-13 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.57 грн |
BSS138K-7 |
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на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.57 грн |
BSS138DWQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 8.42 грн |
BSS138DWK-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.53 грн |
BSS138DWQ-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.34 грн |
DMP6110SFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDFQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP10H400SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1356 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.84 грн |
16+ | 24.75 грн |
46+ | 19.74 грн |
125+ | 18.66 грн |
500+ | 18.01 грн |
P4SMAJ70ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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ZXTP4003GTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 3A
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 3A
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
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BC807-16W-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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ULN2003V12T16-13 |
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на замовлення 67500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 10.89 грн |
GBJ2008-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Case: GBJ
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Case: GBJ
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MJD32CQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Current gain: 10...50
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Current gain: 10...50
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MJD32C-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
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MJD32CUQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
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DMP45H4D9HK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
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DMP45H4D9HJ3 |
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Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
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DMP45H21DHE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -1.2A
Power dissipation: 8W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 21Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Drain current: -0.4A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -1.2A
Power dissipation: 8W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 21Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Drain current: -0.4A
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DMP610DL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
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DMP45H150DHE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -0.45A
Power dissipation: 13.9W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
Drain current: -200mA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -0.45A
Power dissipation: 13.9W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
Drain current: -200mA
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DMP510DL-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain current: -130mA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain current: -130mA
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DMP610DL-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
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DMP3056LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1964 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.45 грн |
10+ | 42.45 грн |
68+ | 13.41 грн |
185+ | 12.64 грн |
BZX84C16W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
120+ | 3.59 грн |
140+ | 2.89 грн |
420+ | 2.21 грн |
1120+ | 2.09 грн |
BZX84C16-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 819 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.25 грн |
76+ | 5.06 грн |
146+ | 2.63 грн |
594+ | 1.50 грн |
BZX84C16S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.26 грн |
BZX84C16Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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AZ1117H-1.5TRE1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT223
Tolerance: ±1%
Output voltage: 1.5V
Output current: 1A
Voltage drop: 1.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT223
Tolerance: ±1%
Output voltage: 1.5V
Output current: 1A
Voltage drop: 1.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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BCW68HTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5048 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
21+ | 18.85 грн |
26+ | 15.25 грн |
100+ | 7.35 грн |
189+ | 4.73 грн |
519+ | 4.47 грн |
3000+ | 4.30 грн |
ZXMP6A16KTC |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1929 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.90 грн |
10+ | 49.97 грн |
37+ | 24.75 грн |
100+ | 23.45 грн |
1000+ | 22.53 грн |
BSS84WQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.58 грн |
BSS8402DWQ-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.98 грн |
BSS84-13-F |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.88 грн |
MMBTA05-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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MMBTA05Q-13-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
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DMN1004UFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: PowerDI®3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: PowerDI®3333-8
на замовлення 212 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.54 грн |
57+ | 15.71 грн |
157+ | 14.87 грн |
FES1JE |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 160000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.14 грн |
MBRD20150CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 150V; 10Ax2
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 150V; 10Ax2
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
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MBRD10200CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Max. forward impulse current: 100A
Kind of package: reel; tape
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SMCJ20CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXTR2005ZQ-13 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 10...100V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 10...100V
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AP7381-50Y-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Voltage drop: 1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Voltage drop: 1V
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ZXTP25020DFLTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 290MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 290MHz
на замовлення 1970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.63 грн |
26+ | 15.17 грн |
74+ | 12.11 грн |
203+ | 11.42 грн |
ZXMN10B08E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 1.5A
On-state resistance: 0.5Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 1.5A
On-state resistance: 0.5Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 392 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.40 грн |
10+ | 40.16 грн |
39+ | 23.22 грн |
50+ | 23.14 грн |
106+ | 21.92 грн |
DMN2004WKQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Application: automotive industry
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Application: automotive industry
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
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DMN2004WK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
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1SMB5926B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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DMN2710UTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.36 грн |
TLV431AE5TA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.71 грн |
SMBJ180A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 180V
Semiconductor structure: unidirectional
Max. forward impulse current: 2.06A
Breakdown voltage: 200...220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Case: SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 180V
Semiconductor structure: unidirectional
Max. forward impulse current: 2.06A
Breakdown voltage: 200...220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Case: SMB
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ZHCS506TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
на замовлення 626 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.91 грн |
16+ | 25.44 грн |
68+ | 13.18 грн |
187+ | 12.49 грн |
ZHCS500TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Max. forward voltage: 0.55V
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ZHCS500QTA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.05V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.05V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
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ZHCS506QTA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.35V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.35V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
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DMG1012T-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
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APX803L20-31SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.51 грн |