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DMTH3004LFG-13 DIODES INCORPORATED DMTH3004LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 250A
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FZT489QTA FZT489QTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACC993B1EB58BF&compId=FZT489.pdf?ci_sign=6989b71f7432f15f60c06a125e8dbe2be100b148 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
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FZT589TA DIODES INCORPORATED FZT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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FCX589TA DIODES INCORPORATED FCX589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 2.3W
Case: SOT89
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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MMSZ5232BQ-7-F MMSZ5232BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Application: automotive industry
Power dissipation: 0.37/0.5W
Type of diode: Zener
Tolerance: ±5%
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MMBZ5232B-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.35W
Type of diode: Zener
Tolerance: ±5%
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MMBZ5232BW-7-F DIODES INCORPORATED ds31037.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323; single diode
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.2W
Type of diode: Zener
Tolerance: ±5%
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S1M-13-F S1M-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 12360 шт:
термін постачання 21-30 дні (днів)
46+9.08 грн
61+6.36 грн
82+4.71 грн
100+4.08 грн
430+2.11 грн
1181+1.99 грн
Мінімальне замовлення: 46
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BC848CQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
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BZX84C4V3-7-F BZX84C4V3-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
68+6.12 грн
107+3.60 грн
129+2.99 грн
205+1.88 грн
Мінімальне замовлення: 68
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BZX84C4V3Q-7-F BZX84C4V3Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C4V3S-7-F BZX84C4V3S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C4V3W-7-F BZX84C4V3W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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SBR6100CTL-13 DIODES INCORPORATED SBR6100CTL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
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SBR6100CTLQ-13 DIODES INCORPORATED SBR6100CTLQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
Application: automotive industry
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BAT760Q-7 BAT760Q-7 DIODES INCORPORATED BAT760.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 235mW
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ZVP3306FTA ZVP3306FTA DIODES INCORPORATED ZVP3306F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1529 шт:
термін постачання 21-30 дні (днів)
14+31.36 грн
17+22.99 грн
75+18.01 грн
77+11.80 грн
212+11.19 грн
750+11.11 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
ZXTP08400BFFTA DIODES INCORPORATED ZXTP08400BFF.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 70MHz
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
11+38.79 грн
17+23.83 грн
69+13.26 грн
188+12.57 грн
3000+12.11 грн
Мінімальне замовлення: 11
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DMN3061SWQ-13 DIODES INCORPORATED DMN3061SWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323
Case: SOT323
Drain-source voltage: 30V
Drain current: 2.7A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 3.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22A
Mounting: SMD
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DMP10H400SE-13 DMP10H400SE-13 DIODES INCORPORATED DMP10H400SE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 316 шт:
термін постачання 21-30 дні (днів)
9+48.69 грн
13+30.42 грн
50+24.52 грн
54+16.86 грн
148+15.94 грн
Мінімальне замовлення: 9
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PI4ULS5V202XVEX DIODES INCORPORATED PI4ULS5V202.pdf Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+27.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMP2200UDW-13 DMP2200UDW-13 DIODES INCORPORATED DMP2200UDW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.6W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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74HCT594S16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FDC0D3&compId=74HCT594.pdf?ci_sign=1bcebad50b69f3e1598d8c3cc81f760eea2635a4 Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
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74HCT594T16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FEC0D3&compId=74HCT594.pdf?ci_sign=9bdaa0f89321e6f21f017bd23d4d2926bd3c046c Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
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DMG2305UXQ-7 DMG2305UXQ-7 DIODES INCORPORATED DMG2305UXQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG2305UX-13 DMG2305UX-13 DIODES INCORPORATED DMG2305UX.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG2305UXQ-13 DMG2305UXQ-13 DIODES INCORPORATED DMG2305UXQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BAT54TW-7-F BAT54TW-7-F DIODES INCORPORATED bat54.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 0.24V
Load current: 0.2A
на замовлення 1345 шт:
термін постачання 21-30 дні (днів)
19+22.28 грн
29+13.33 грн
100+7.97 грн
206+4.37 грн
566+4.14 грн
Мінімальне замовлення: 19
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74AUP2G34DW-7 74AUP2G34DW-7 DIODES INCORPORATED 74AUP2G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Manufacturer series: AUP
на замовлення 1969 шт:
термін постачання 21-30 дні (днів)
109+3.80 грн
114+3.37 грн
118+3.25 грн
500+3.07 грн
Мінімальне замовлення: 109
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74AUP2G17DW-7 74AUP2G17DW-7 DIODES INCORPORATED 74AUP2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Manufacturer series: AUP
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
13+33.01 грн
18+22.22 грн
21+18.32 грн
100+9.66 грн
135+6.74 грн
370+6.36 грн
Мінімальне замовлення: 13
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DMG1013TQ-7 DMG1013TQ-7 DIODES INCORPORATED DMG1013TQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
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DMG1013UWQ-13 DMG1013UWQ-13 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
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SMCJ64CA-13-F SMCJ64CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP2078LCA3-7 DIODES INCORPORATED DMP2078LCA3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Case: X4-DSN1006-3
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
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AP22816BKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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DDTC123JE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
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MBRB20150CT-13 DIODES INCORPORATED MBRB20150CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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MBRB20150CT DIODES INCORPORATED MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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SDT3060VCT SDT3060VCT DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 50mA
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
6+70.15 грн
10+50.65 грн
34+26.52 грн
94+25.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SDT3060VCTFP SDT3060VCTFP DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
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DMP3036SFV-7 DIODES INCORPORATED DMP3036SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
9+47.04 грн
12+33.49 грн
62+14.64 грн
170+13.87 грн
2000+13.56 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DDTA114YCA-7-F DDTA114YCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YE-7-F DIODES INCORPORATED ds30318.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YLP-7 DIODES INCORPORATED ds30807.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YUA-7-F DIODES INCORPORATED ds30326.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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AP2311FGEG-7 DIODES INCORPORATED AP2301-11.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 2A
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2152AFGEG-7 DIODES INCORPORATED AP2142A_52A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2142AFGEG-7 DIODES INCORPORATED AP2142A_52A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2162AFGEG-7 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2172AFGEG-7 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2182AFGEG-7 DIODES INCORPORATED AP2182A_92A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2192AFGEG-7 DIODES INCORPORATED AP2182A_92A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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DDZ9702T-7 DIODES INCORPORATED ds30553.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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SMBJ85CA-13-F SMBJ85CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FMMT560QTA DIODES INCORPORATED FMMT560Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Pulsed collector current: 0.5A
Current gain: 15...300
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AP1534SG-13 AP1534SG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8217F5FBDE28&compId=AP1534x-DTE.pdf?ci_sign=69e5aa11d499ae07dad20f94590e24c7a5fcfbef Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Frequency: 300kHz
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)
4+106.46 грн
10+60.23 грн
25+51.04 грн
31+29.50 грн
84+27.97 грн
250+27.89 грн
1000+26.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMP3013SFV-7 DMP3013SFV-7 DIODES INCORPORATED DMP3013SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 0.94W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+15.16 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMP3013SFK-7 DIODES INCORPORATED DMP3013SFK.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 33.7nC
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DMTH3004LFG-13 DMTH3004LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 250A
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FZT489QTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACC993B1EB58BF&compId=FZT489.pdf?ci_sign=6989b71f7432f15f60c06a125e8dbe2be100b148
FZT489QTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
FZT589TA FZT589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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FCX589TA FCX589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 2.3W
Case: SOT89
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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MMSZ5232BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5232BQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Application: automotive industry
Power dissipation: 0.37/0.5W
Type of diode: Zener
Tolerance: ±5%
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MMBZ5232B-7-F MMBZ5221B-MMBZ5259B.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.35W
Type of diode: Zener
Tolerance: ±5%
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MMBZ5232BW-7-F ds31037.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323; single diode
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.2W
Type of diode: Zener
Tolerance: ±5%
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S1M-13-F s1ab-s1mb.pdf
S1M-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 12360 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.08 грн
61+6.36 грн
82+4.71 грн
100+4.08 грн
430+2.11 грн
1181+1.99 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BC848CQ-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
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BZX84C4V3-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C4V3-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
68+6.12 грн
107+3.60 грн
129+2.99 грн
205+1.88 грн
Мінімальне замовлення: 68
В кошику  од. на суму  грн.
BZX84C4V3Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C4V3Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C4V3S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4
BZX84C4V3S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C4V3W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C4V3W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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SBR6100CTL-13 SBR6100CTL.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
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SBR6100CTLQ-13 SBR6100CTLQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
Application: automotive industry
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BAT760Q-7 BAT760.pdf
BAT760Q-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 235mW
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ZVP3306FTA ZVP3306F.pdf
ZVP3306FTA
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1529 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.36 грн
17+22.99 грн
75+18.01 грн
77+11.80 грн
212+11.19 грн
750+11.11 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
ZXTP08400BFFTA ZXTP08400BFF.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 70MHz
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+38.79 грн
17+23.83 грн
69+13.26 грн
188+12.57 грн
3000+12.11 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMN3061SWQ-13 DMN3061SWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323
Case: SOT323
Drain-source voltage: 30V
Drain current: 2.7A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 3.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22A
Mounting: SMD
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DMP10H400SE-13 DMP10H400SE.pdf
DMP10H400SE-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 316 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.69 грн
13+30.42 грн
50+24.52 грн
54+16.86 грн
148+15.94 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PI4ULS5V202XVEX PI4ULS5V202.pdf
Виробник: DIODES INCORPORATED
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+27.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMP2200UDW-13 DMP2200UDW.pdf
DMP2200UDW-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.6W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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74HCT594S16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FDC0D3&compId=74HCT594.pdf?ci_sign=1bcebad50b69f3e1598d8c3cc81f760eea2635a4
Виробник: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
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74HCT594T16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FEC0D3&compId=74HCT594.pdf?ci_sign=9bdaa0f89321e6f21f017bd23d4d2926bd3c046c
Виробник: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
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DMG2305UXQ-7 DMG2305UXQ.pdf
DMG2305UXQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG2305UX-13 DMG2305UX.pdf
DMG2305UX-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG2305UXQ-13 DMG2305UXQ.pdf
DMG2305UXQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BAT54TW-7-F bat54.pdf
BAT54TW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 0.24V
Load current: 0.2A
на замовлення 1345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+22.28 грн
29+13.33 грн
100+7.97 грн
206+4.37 грн
566+4.14 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
74AUP2G34DW-7 74AUP2G34.pdf
74AUP2G34DW-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Manufacturer series: AUP
на замовлення 1969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
109+3.80 грн
114+3.37 грн
118+3.25 грн
500+3.07 грн
Мінімальне замовлення: 109
В кошику  од. на суму  грн.
74AUP2G17DW-7 74AUP2G17.pdf
74AUP2G17DW-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Manufacturer series: AUP
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.01 грн
18+22.22 грн
21+18.32 грн
100+9.66 грн
135+6.74 грн
370+6.36 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMG1013TQ-7 DMG1013TQ.pdf
DMG1013TQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
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DMG1013UWQ-13 DMG1013UWQ.pdf
DMG1013UWQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
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SMCJ64CA-13-F SMCJ_ser.pdf
SMCJ64CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP2078LCA3-7 DMP2078LCA3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Case: X4-DSN1006-3
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
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AP22816BKAWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKBWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKEWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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DDTC123JE-7-F ds30314.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
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MBRB20150CT-13 MBRB20150CT.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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MBRB20150CT MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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SDT3060VCT SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 50mA
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+70.15 грн
10+50.65 грн
34+26.52 грн
94+25.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SDT3060VCTFP SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCTFP
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
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DMP3036SFV-7 DMP3036SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.04 грн
12+33.49 грн
62+14.64 грн
170+13.87 грн
2000+13.56 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DDTA114YCA-7-F ds30334.pdf
DDTA114YCA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YE-7-F ds30318.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YLP-7 ds30807.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YUA-7-F ds30326.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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AP2311FGEG-7 AP2301-11.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 2A
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2152AFGEG-7 AP2142A_52A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2142AFGEG-7 AP2142A_52A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2162AFGEG-7 AP2162A_72A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2172AFGEG-7 AP2162A_72A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2182AFGEG-7 AP2182A_92A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2192AFGEG-7 AP2182A_92A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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DDZ9702T-7 ds30553.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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SMBJ85CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ85CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FMMT560QTA FMMT560Q.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Pulsed collector current: 0.5A
Current gain: 15...300
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AP1534SG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8217F5FBDE28&compId=AP1534x-DTE.pdf?ci_sign=69e5aa11d499ae07dad20f94590e24c7a5fcfbef
AP1534SG-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Frequency: 300kHz
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+106.46 грн
10+60.23 грн
25+51.04 грн
31+29.50 грн
84+27.97 грн
250+27.89 грн
1000+26.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMP3013SFV-7 DMP3013SFV.pdf
DMP3013SFV-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 0.94W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+15.16 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMP3013SFK-7 DMP3013SFK.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 33.7nC
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