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DMG2305UXQ-13 DMG2305UXQ-13 DIODES INCORPORATED DMG2305UXQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BAT54TW-7-F BAT54TW-7-F DIODES INCORPORATED bat54.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 0.24V
Load current: 0.2A
на замовлення 1345 шт:
термін постачання 21-30 дні (днів)
19+22.28 грн
29+13.33 грн
100+7.97 грн
206+4.37 грн
566+4.14 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
74AUP2G34DW-7 74AUP2G34DW-7 DIODES INCORPORATED 74AUP2G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Manufacturer series: AUP
на замовлення 1969 шт:
термін постачання 21-30 дні (днів)
109+3.80 грн
114+3.37 грн
118+3.25 грн
500+3.07 грн
Мінімальне замовлення: 109
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74AUP2G17DW-7 74AUP2G17DW-7 DIODES INCORPORATED 74AUP2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Manufacturer series: AUP
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
13+33.01 грн
18+22.22 грн
21+18.32 грн
100+9.66 грн
135+6.74 грн
370+6.36 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMG1013TQ-7 DMG1013TQ-7 DIODES INCORPORATED DMG1013TQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
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DMG1013UWQ-13 DMG1013UWQ-13 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
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SMCJ64CA-13-F SMCJ64CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP2078LCA3-7 DIODES INCORPORATED DMP2078LCA3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Case: X4-DSN1006-3
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
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AP22816BKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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DDTC123JE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
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MBRB20150CT-13 DIODES INCORPORATED MBRB20150CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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MBRB20150CT DIODES INCORPORATED MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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SDT3060VCT SDT3060VCT DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 50mA
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
6+70.15 грн
10+50.65 грн
34+26.52 грн
94+25.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SDT3060VCTFP SDT3060VCTFP DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
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DMP3036SFV-7 DIODES INCORPORATED DMP3036SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
9+47.04 грн
12+33.49 грн
62+14.64 грн
170+13.87 грн
2000+13.56 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DDTA114YCA-7-F DDTA114YCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YE-7-F DIODES INCORPORATED ds30318.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YLP-7 DIODES INCORPORATED ds30807.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YUA-7-F DIODES INCORPORATED ds30326.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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AP2311FGEG-7 DIODES INCORPORATED AP2301-11.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 2A
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2152AFGEG-7 DIODES INCORPORATED AP2142A_52A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2142AFGEG-7 DIODES INCORPORATED AP2142A_52A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2162AFGEG-7 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2172AFGEG-7 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2182AFGEG-7 DIODES INCORPORATED AP2182A_92A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2192AFGEG-7 DIODES INCORPORATED AP2182A_92A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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DDZ9702T-7 DIODES INCORPORATED ds30553.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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SMBJ85CA-13-F SMBJ85CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FMMT560QTA DIODES INCORPORATED FMMT560Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Pulsed collector current: 0.5A
Current gain: 15...300
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AP1534SG-13 AP1534SG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8217F5FBDE28&compId=AP1534x-DTE.pdf?ci_sign=69e5aa11d499ae07dad20f94590e24c7a5fcfbef Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Frequency: 300kHz
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)
4+106.46 грн
10+60.23 грн
25+51.04 грн
31+29.50 грн
84+27.97 грн
250+27.89 грн
1000+26.82 грн
Мінімальне замовлення: 4
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DMP3013SFV-7 DMP3013SFV-7 DIODES INCORPORATED DMP3013SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 0.94W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+15.16 грн
Мінімальне замовлення: 2000
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DMP3013SFK-7 DIODES INCORPORATED DMP3013SFK.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 33.7nC
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DDC114YU-7-F DDC114YU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 70mA
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
на замовлення 3020 шт:
термін постачання 21-30 дні (днів)
60+6.93 грн
72+5.33 грн
94+4.11 грн
129+2.98 грн
476+1.89 грн
1307+1.79 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
DDC114EU-7-F DDC114EU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
48+8.75 грн
70+5.52 грн
85+4.52 грн
118+3.26 грн
458+1.97 грн
1258+1.86 грн
Мінімальне замовлення: 48
В кошику  од. на суму  грн.
SMAJ20CA-13-F SMAJ20CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
16+23.76 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMAJ20CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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DESD1CAN2SOQ-7 DESD1CAN2SOQ-7 DIODES INCORPORATED DESD1CAN2SOQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT23; Ch: 2
Type of diode: TVS array
Case: SOT23
Capacitance: 17pF
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Leakage current: 50nA
Number of channels: 2
Mounting: SMD
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)
15+27.56 грн
20+19.77 грн
100+12.80 грн
114+7.89 грн
314+7.51 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
DESD2CAN2SOQ-7 DESD2CAN2SOQ-7 DIODES INCORPORATED DESD2CAN2SOQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Case: SOT23
Capacitance: 30pF
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Leakage current: 10nA
Number of channels: 2
Kind of package: reel; tape
Mounting: SMD
на замовлення 2508 шт:
термін постачання 21-30 дні (днів)
13+33.84 грн
24+16.40 грн
31+12.57 грн
97+9.43 грн
265+8.89 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DESD1CAN2WQ-7 DIODES INCORPORATED DESD1CAN2WQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT323; Ch: 2
Type of diode: TVS array
Case: SOT323
Capacitance: 12pF
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Number of channels: 2
Mounting: SMD
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RS2K-13-F RS2K-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
10+45.39 грн
14+28.51 грн
100+18.70 грн
109+8.35 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
S2K-13-F DIODES INCORPORATED ds16004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 20pF
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S2KA-13-F DIODES INCORPORATED ds16004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; SMA; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.15V
Kind of package: reel; tape
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S2KDFQ-13 DIODES INCORPORATED S2KDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 2A; D-FLAT; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
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RS2KA-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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GBJ1506-F GBJ1506-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984FE26664303D8BF&compId=GBJ15_ser.pdf?ci_sign=d0ee1f72a3eea29423c53400a5242565e88a5ead Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
3+165.06 грн
10+89.66 грн
15+62.84 грн
40+59.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MMDT4413-7-F DIODES INCORPORATED ds30121.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 20...300
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: complementary pair
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MMDT4401-7-F DIODES INCORPORATED MMDT4401.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 20...300
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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MMDT4403-7-F DIODES INCORPORATED ds30110.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 20...300
Mounting: SMD
Frequency: 200MHz
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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AH1911-W-7 DIODES INCORPORATED AH1911-AH1921.pdf Category: Sensors and Transducers - Unclassified
Description: AH1911-W-7
на замовлення 45000 шт:
термін постачання 21-30 дні (днів)
3000+13.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
APX823-23W5G-7 APX823-23W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
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74LVC1G17QSE-7 DIODES INCORPORATED 74LVC1G17Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
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74LVC1G17QW5-7 DIODES INCORPORATED 74LVC1G17Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
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AP3031KTR-AG1 AP3031KTR-AG1 DIODES INCORPORATED AP3031.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Frequency: 1MHz
Output voltage: 37V DC
Output current: 1.4A
Type of integrated circuit: PMIC
Application: for LED applications
Input voltage: 2.7...16V DC
Efficiency: 92%
Integrated circuit features: PWM
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: boost
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23-6
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BZX84B7V5-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84B7V5Q-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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74LVC1G86W5-7 74LVC1G86W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80C1E0D3&compId=74LVC1G86.pdf?ci_sign=721d0a17470c39102c3d72b16aa3e70644332a4b Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80C0E0D3&compId=74LVC1G86.pdf?ci_sign=020037857c72f6af19080425d749be182b02bee4 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BEE0D3&compId=74LVC1G86.pdf?ci_sign=1f3261aa01cf2e6e72b908839f110e0c300740a8 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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DMG2305UXQ-13 DMG2305UXQ.pdf
DMG2305UXQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BAT54TW-7-F bat54.pdf
BAT54TW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 0.24V
Load current: 0.2A
на замовлення 1345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+22.28 грн
29+13.33 грн
100+7.97 грн
206+4.37 грн
566+4.14 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
74AUP2G34DW-7 74AUP2G34.pdf
74AUP2G34DW-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Manufacturer series: AUP
на замовлення 1969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
109+3.80 грн
114+3.37 грн
118+3.25 грн
500+3.07 грн
Мінімальне замовлення: 109
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74AUP2G17DW-7 74AUP2G17.pdf
74AUP2G17DW-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Manufacturer series: AUP
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.01 грн
18+22.22 грн
21+18.32 грн
100+9.66 грн
135+6.74 грн
370+6.36 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMG1013TQ-7 DMG1013TQ.pdf
DMG1013TQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
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DMG1013UWQ-13 DMG1013UWQ.pdf
DMG1013UWQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
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SMCJ64CA-13-F SMCJ_ser.pdf
SMCJ64CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP2078LCA3-7 DMP2078LCA3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Case: X4-DSN1006-3
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
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AP22816BKAWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKBWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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AP22816BKEWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
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DDTC123JE-7-F ds30314.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
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MBRB20150CT-13 MBRB20150CT.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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MBRB20150CT MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
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SDT3060VCT SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 50mA
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+70.15 грн
10+50.65 грн
34+26.52 грн
94+25.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SDT3060VCTFP SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCTFP
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
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DMP3036SFV-7 DMP3036SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.04 грн
12+33.49 грн
62+14.64 грн
170+13.87 грн
2000+13.56 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DDTA114YCA-7-F ds30334.pdf
DDTA114YCA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YE-7-F ds30318.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YLP-7 ds30807.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA114YUA-7-F ds30326.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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AP2311FGEG-7 AP2301-11.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 2A
On-state resistance: 70mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2152AFGEG-7 AP2142A_52A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2142AFGEG-7 AP2142A_52A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2162AFGEG-7 AP2162A_72A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2172AFGEG-7 AP2162A_72A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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AP2182AFGEG-7 AP2182A_92A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
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AP2192AFGEG-7 AP2182A_92A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
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DDZ9702T-7 ds30553.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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SMBJ85CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ85CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FMMT560QTA FMMT560Q.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Pulsed collector current: 0.5A
Current gain: 15...300
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AP1534SG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8217F5FBDE28&compId=AP1534x-DTE.pdf?ci_sign=69e5aa11d499ae07dad20f94590e24c7a5fcfbef
AP1534SG-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Frequency: 300kHz
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+106.46 грн
10+60.23 грн
25+51.04 грн
31+29.50 грн
84+27.97 грн
250+27.89 грн
1000+26.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMP3013SFV-7 DMP3013SFV.pdf
DMP3013SFV-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 0.94W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+15.16 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMP3013SFK-7 DMP3013SFK.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 33.7nC
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DDC114YU-7-F DDC_XXXX_U.pdf
DDC114YU-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 70mA
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
на замовлення 3020 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
60+6.93 грн
72+5.33 грн
94+4.11 грн
129+2.98 грн
476+1.89 грн
1307+1.79 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
DDC114EU-7-F DDC_XXXX_U.pdf
DDC114EU-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
48+8.75 грн
70+5.52 грн
85+4.52 грн
118+3.26 грн
458+1.97 грн
1258+1.86 грн
Мінімальне замовлення: 48
В кошику  од. на суму  грн.
SMAJ20CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ20CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+23.76 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMAJ20CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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DESD1CAN2SOQ-7 DESD1CAN2SOQ.pdf
DESD1CAN2SOQ-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT23; Ch: 2
Type of diode: TVS array
Case: SOT23
Capacitance: 17pF
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Leakage current: 50nA
Number of channels: 2
Mounting: SMD
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+27.56 грн
20+19.77 грн
100+12.80 грн
114+7.89 грн
314+7.51 грн
Мінімальне замовлення: 15
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DESD2CAN2SOQ-7 DESD2CAN2SOQ.pdf
DESD2CAN2SOQ-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Case: SOT23
Capacitance: 30pF
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Leakage current: 10nA
Number of channels: 2
Kind of package: reel; tape
Mounting: SMD
на замовлення 2508 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.84 грн
24+16.40 грн
31+12.57 грн
97+9.43 грн
265+8.89 грн
Мінімальне замовлення: 13
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DESD1CAN2WQ-7 DESD1CAN2WQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT323; Ch: 2
Type of diode: TVS array
Case: SOT323
Capacitance: 12pF
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Number of channels: 2
Mounting: SMD
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RS2K-13-F ds15004.pdf
RS2K-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.39 грн
14+28.51 грн
100+18.70 грн
109+8.35 грн
Мінімальне замовлення: 10
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S2K-13-F ds16004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 20pF
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S2KA-13-F ds16004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; SMA; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.15V
Kind of package: reel; tape
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S2KDFQ-13 S2KDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 2A; D-FLAT; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
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RS2KA-13-F ds15004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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GBJ1506-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984FE26664303D8BF&compId=GBJ15_ser.pdf?ci_sign=d0ee1f72a3eea29423c53400a5242565e88a5ead
GBJ1506-F
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+165.06 грн
10+89.66 грн
15+62.84 грн
40+59.01 грн
Мінімальне замовлення: 3
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MMDT4413-7-F ds30121.pdf
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 20...300
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: complementary pair
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MMDT4401-7-F MMDT4401.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 20...300
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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MMDT4403-7-F ds30110.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 20...300
Mounting: SMD
Frequency: 200MHz
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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AH1911-W-7 AH1911-AH1921.pdf
Виробник: DIODES INCORPORATED
Category: Sensors and Transducers - Unclassified
Description: AH1911-W-7
на замовлення 45000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+13.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
APX823-23W5G-7 APX823_824_825A.pdf
APX823-23W5G-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
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74LVC1G17QSE-7 74LVC1G17Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
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74LVC1G17QW5-7 74LVC1G17Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
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AP3031KTR-AG1 AP3031.pdf
AP3031KTR-AG1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Frequency: 1MHz
Output voltage: 37V DC
Output current: 1.4A
Type of integrated circuit: PMIC
Application: for LED applications
Input voltage: 2.7...16V DC
Efficiency: 92%
Integrated circuit features: PWM
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: boost
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23-6
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BZX84B7V5-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84B7V5Q-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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74LVC1G86W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80C1E0D3&compId=74LVC1G86.pdf?ci_sign=721d0a17470c39102c3d72b16aa3e70644332a4b
74LVC1G86W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80C0E0D3&compId=74LVC1G86.pdf?ci_sign=020037857c72f6af19080425d749be182b02bee4
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BEE0D3&compId=74LVC1G86.pdf?ci_sign=1f3261aa01cf2e6e72b908839f110e0c300740a8
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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