| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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GPI4TIC10DFV | GaNPower |
 Description: IC GaN Power 650V 10A DFN6x8Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Low Side Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 3V ~ 8V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| GPI4TIC15DFV | GaNPower |
Description: Power IC based on Power GaN HEMT Configuration: N-Channel Package / Case: 8-WDFN Exposed Pad Packaging: Tube Current - Test: 2.5 A Voltage - Test: 6.5 V Voltage - Rated: 900 V Part Status: Active Supplier Device Package: 8-DFN (8x8) Technology: MOSFET |
на замовлення 211 шт: термін постачання 21-31 дні (днів) |
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GPI4TIC8DFV | GaNPower |
Description: IC GaN Power 650V 8A DFN6x8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Low Side Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 3V ~ 8V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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GPI65005DF | GaNPower |
Description: GANFET N-CH 650V 5A DFN 5X6 Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 1.4V @ 1.75mA Current - Continuous Drain (Id) @ 25°C: 5A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
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GPI65005DF68 | GaNPower |
Description: GaNFET N-CH 650V 5A DFN6x8 Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Vgs(th) (Max) @ Id: 1.7V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 5A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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GPI65007DF56 | GaNPower |
Description: GaNFET N-CH 650V 7A DFN5x6 Part Status: Active Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 76.1 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 1.5V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 7A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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GPI65007DF88 | GaNPower |
Description: GaNFET N-CH 650V 7A DFN8x8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Vgs(th) (Max) @ Id: 1.5V @ 3.5mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7.5V, -12V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 500 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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GPI65008DF56 | GaNPower |
Description: GANFET N-CH 650V 8A DFN5X6 Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 1.4V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 8A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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| GPI65008DF68 | GaNPower |
Description: GaNFET N-CH 650V 8A DFN6x8 Part Status: Active Vgs(th) (Max) @ Id: 1.7V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 8A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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GPI65010DF56 | GaNPower |
Description: GANFET N-CH 650V 10A DFN 5X6 Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 1.4V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 10A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
на замовлення 340 шт: термін постачання 21-31 дні (днів) |
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GPI65015DFN | GaNPower |
Description: GANFET N-CH 650V 15A DFN 8X8 Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 1.2V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 15A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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GPI65015TO | GaNPower |
Description: GANFET N-CH 650V 15A TO220 Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: Die Vgs(th) (Max) @ Id: 1.2V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 15A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||
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GPI65030DFN | GaNPower |
Description: GANFET N-CH 650V 30A DFN8X8 Current - Continuous Drain (Id) @ 25°C: 30A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 1.2V @ 3.5mA |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| GPI65030TO5L | GaNPower |
Description: GaNFET N-CH 650V 30A TO263-5L Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 1.4V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 30A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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GPI65060DFN | GaNPower |
Description: GANFET N-CH 650V 60A DFN8X8 Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7.5V, -12V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 1.2V @ 3.5mA Current - Continuous Drain (Id) @ 25°C: 60A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||
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GPI6508DFIC | GaNPower |
Description: IC GAN POWER 650V 8A DFN5X6 Part Status: Active Input Type: Non-Inverting Rds On (Typ): 170mOhm Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-QFN (5x6) Current - Output (Max): 7.5A Voltage - Supply (Vcc/Vdd): 6.5V Voltage - Load: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||
| GPI6TIC10DFV | GaNPower |
Description: IC GaN Power 650V 10A DFN6x8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Low Side Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 3V ~ 8V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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GPI6TIC15DFV | GaNPower |
Description: Power IC based on Power GaN HEMT Current - Test: 2.5 A Voltage - Test: 6.5 V Voltage - Rated: 900 V Part Status: Active Supplier Device Package: 8-DFN (8x8) Technology: GaNFET (Gallium Nitride) Configuration: N-Channel Package / Case: 8-WDFN Exposed Pad Packaging: Tube Drain to Source Voltage (Vdss): 900 V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V Mounting Type: Surface Mount |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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GPI6TIC8DFV | GaNPower |
Description: IC GaN Power 650V 8A DFN6x8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Low Side Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 3V ~ 8V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| GPIHI10ICDF68 | GaNPower |
Description: IC GaN Power 650V 10A DFN6x8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 3V ~ 8V Part Status: Active |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| GPIHI8ICDF68 | GaNPower |
Description: IC GaN Power 650V 8A DFN6x8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 3V ~ 8V Part Status: Active |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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GPIHV30DFN | GaNPower |
Description: GANFET N-CH 1200V 30A DFN8X8 Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A Vgs(th) (Max) @ Id: 1.4V @ 3.5mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7.5V, -12V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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GPIHV30SB5L | GaNPower |
Description: GANFET N-CH 1200V 30A TO263-5L |
товару немає в наявності |
В кошику од. на суму грн. | ||
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GPIRGIC15DFV | GaNPower |
Description: Power IC based on Power GaN HEMT Drain to Source Voltage (Vdss): 900 V Drive Voltage (Max Rds On, Min Rds On): 5V, 8V Part Status: Active Supplier Device Package: 8-DFN (8x8) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Packaging: Bag FET Type: N-Channel Technology: GaNFET (Gallium Nitride) |
на замовлення 424 шт: термін постачання 21-31 дні (днів) |
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GPIXV30DFN | GaNPower |
Description: GANFET N-CH 1200V 30A DFN8X8 Packaging: Bag Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A Supplier Device Package: 8-DFN (8x8) Part Status: Active Drain to Source Voltage (Vdss): 1200 V |
товару немає в наявності |
В кошику од. на суму грн. |
| GPI4TIC10DFV |
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Виробник: GaNPower
Description: IC GaN Power 650V 10A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Description: IC GaN Power 650V 10A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 431.10 грн |
| GPI4TIC15DFV |
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Виробник: GaNPower
Description: Power IC based on Power GaN HEMT
Configuration: N-Channel
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
Current - Test: 2.5 A
Voltage - Test: 6.5 V
Voltage - Rated: 900 V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Technology: MOSFET
Description: Power IC based on Power GaN HEMT
Configuration: N-Channel
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
Current - Test: 2.5 A
Voltage - Test: 6.5 V
Voltage - Rated: 900 V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Technology: MOSFET
на замовлення 211 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 733.65 грн |
| GPI4TIC8DFV |
|
Виробник: GaNPower
Description: IC GaN Power 650V 8A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Description: IC GaN Power 650V 8A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 344.88 грн |
| GPI65005DF |
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Виробник: GaNPower
Description: GANFET N-CH 650V 5A DFN 5X6
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 1.75mA
Current - Continuous Drain (Id) @ 25°C: 5A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 5A DFN 5X6
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 1.75mA
Current - Continuous Drain (Id) @ 25°C: 5A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
на замовлення 167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.55 грн |
| GPI65005DF68 |
|
Виробник: GaNPower
Description: GaNFET N-CH 650V 5A DFN6x8
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Vgs(th) (Max) @ Id: 1.7V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 5A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Description: GaNFET N-CH 650V 5A DFN6x8
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Vgs(th) (Max) @ Id: 1.7V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 5A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
на замовлення 490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.95 грн |
| GPI65007DF56 |
|
Виробник: GaNPower
Description: GaNFET N-CH 650V 7A DFN5x6
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 76.1 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.5V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 7A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: GaNFET N-CH 650V 7A DFN5x6
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 76.1 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.5V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 7A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.39 грн |
| GPI65007DF88 |
|
Виробник: GaNPower
Description: GaNFET N-CH 650V 7A DFN8x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Vgs(th) (Max) @ Id: 1.5V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7.5V, -12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 500 V
Description: GaNFET N-CH 650V 7A DFN8x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Vgs(th) (Max) @ Id: 1.5V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7.5V, -12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 500 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.39 грн |
| GPI65008DF56 |
|
Виробник: GaNPower
Description: GANFET N-CH 650V 8A DFN5X6
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 8A DFN5X6
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
на замовлення 53 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 313.53 грн |
| GPI65008DF68 |
|
Виробник: GaNPower
Description: GaNFET N-CH 650V 8A DFN6x8
Part Status: Active
Vgs(th) (Max) @ Id: 1.7V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Description: GaNFET N-CH 650V 8A DFN6x8
Part Status: Active
Vgs(th) (Max) @ Id: 1.7V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 313.53 грн |
| GPI65010DF56 |
|
Виробник: GaNPower
Description: GANFET N-CH 650V 10A DFN 5X6
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 10A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 10A DFN 5X6
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 10A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
на замовлення 340 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 391.91 грн |
| GPI65015DFN |
|
Виробник: GaNPower
Description: GANFET N-CH 650V 15A DFN 8X8
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 15A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 15A DFN 8X8
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 15A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
на замовлення 121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 587.86 грн |
| GPI65015TO |
|
Виробник: GaNPower
Description: GANFET N-CH 650V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 15A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tube
Description: GANFET N-CH 650V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 15A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tube
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од. на суму грн.
| GPI65030DFN |
|
Виробник: GaNPower
Description: GANFET N-CH 650V 30A DFN8X8
Current - Continuous Drain (Id) @ 25°C: 30A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Description: GANFET N-CH 650V 30A DFN8X8
Current - Continuous Drain (Id) @ 25°C: 30A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1081.66 грн |
| GPI65030TO5L |
|
Виробник: GaNPower
Description: GaNFET N-CH 650V 30A TO263-5L
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 30A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Description: GaNFET N-CH 650V 30A TO263-5L
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 30A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
на замовлення 90 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1175.72 грн |
| GPI65060DFN |
|
Виробник: GaNPower
Description: GANFET N-CH 650V 60A DFN8X8
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 60A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 60A DFN8X8
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 60A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| GPI6508DFIC |
|
Виробник: GaNPower
Description: IC GAN POWER 650V 8A DFN5X6
Part Status: Active
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-QFN (5x6)
Current - Output (Max): 7.5A
Voltage - Supply (Vcc/Vdd): 6.5V
Voltage - Load: 650V
Description: IC GAN POWER 650V 8A DFN5X6
Part Status: Active
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-QFN (5x6)
Current - Output (Max): 7.5A
Voltage - Supply (Vcc/Vdd): 6.5V
Voltage - Load: 650V
товару немає в наявності
В кошику
од. на суму грн.
| GPI6TIC10DFV |
|
Виробник: GaNPower
Description: IC GaN Power 650V 10A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Description: IC GaN Power 650V 10A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 431.10 грн |
| GPI6TIC15DFV |
|
Виробник: GaNPower
Description: Power IC based on Power GaN HEMT
Current - Test: 2.5 A
Voltage - Test: 6.5 V
Voltage - Rated: 900 V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Technology: GaNFET (Gallium Nitride)
Configuration: N-Channel
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
Drain to Source Voltage (Vdss): 900 V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Mounting Type: Surface Mount
Description: Power IC based on Power GaN HEMT
Current - Test: 2.5 A
Voltage - Test: 6.5 V
Voltage - Rated: 900 V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Technology: GaNFET (Gallium Nitride)
Configuration: N-Channel
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
Drain to Source Voltage (Vdss): 900 V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Mounting Type: Surface Mount
на замовлення 226 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 733.65 грн |
| GPI6TIC8DFV |
|
Виробник: GaNPower
Description: IC GaN Power 650V 8A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Description: IC GaN Power 650V 8A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 344.88 грн |
| GPIHI10ICDF68 |
|
Виробник: GaNPower
Description: IC GaN Power 650V 10A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Part Status: Active
Description: IC GaN Power 650V 10A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 431.10 грн |
| GPIHI8ICDF68 |
|
Виробник: GaNPower
Description: IC GaN Power 650V 8A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Part Status: Active
Description: IC GaN Power 650V 8A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 3V ~ 8V
Part Status: Active
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 344.88 грн |
| GPIHV30DFN |
|
Виробник: GaNPower
Description: GANFET N-CH 1200V 30A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7.5V, -12V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
Description: GANFET N-CH 1200V 30A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7.5V, -12V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1724.39 грн |
| GPIHV30SB5L |
|
Виробник: GaNPower
Description: GANFET N-CH 1200V 30A TO263-5L
Description: GANFET N-CH 1200V 30A TO263-5L
товару немає в наявності
В кошику
од. на суму грн.
| GPIRGIC15DFV |
|
Виробник: GaNPower
Description: Power IC based on Power GaN HEMT
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 8V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Bag
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Description: Power IC based on Power GaN HEMT
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 8V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Bag
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
на замовлення 424 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 733.65 грн |
| GPIXV30DFN |
Виробник: GaNPower
Description: GANFET N-CH 1200V 30A DFN8X8
Packaging: Bag
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: 8-DFN (8x8)
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Description: GANFET N-CH 1200V 30A DFN8X8
Packaging: Bag
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: 8-DFN (8x8)
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
товару немає в наявності
В кошику
од. на суму грн.