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IPD105N03LGATMA1 IPD105N03LGATMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29105N03L%20G_Rev2010.pdf Description: MOSFET N-CH 30V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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IPD135N03LGXT IPD135N03LGXT Infineon Technologies IP%28D%2CF%2CS%2CU%29135N03L_G.pdf Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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IPP04CN10NG IPP04CN10NG Infineon Technologies IP(B,I,P)04CN10N%20G.pdf Description: MOSFET N-CH 100V 100A TO220-3
товару немає в наявності
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IPP50R299CPXKSA1 IPP50R299CPXKSA1 Infineon Technologies Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPP50R350CPXKSA1 IPP50R350CPXKSA1 Infineon Technologies Infineon-IPP50R350CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01238540e43d66ad Description: MOSFET N-CH 550V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
товару немає в наявності
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ESD8V0R1B02LRHE6327XTSA1 ESD8V0R1B02LRHE6327XTSA1 Infineon Technologies ESD8V0R1B_Rev09.pdf Description: TVS DIODE 14VWM 28VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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ESD8V0R1B02LSE6327XTSA1 ESD8V0R1B02LSE6327XTSA1 Infineon Technologies ESD8V0R1B_Rev09.pdf Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPP60R250CPXKSA1 IPP60R250CPXKSA1 Infineon Technologies IPP60R250CP_rev2.0..pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304316f66ee8011744d1654a2fa7 Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)
2+276.94 грн
50+211.40 грн
100+181.20 грн
500+151.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R075CPFKSA1 IPW60R075CPFKSA1 Infineon Technologies IPW60R075CP_rev2.2.pdf?folderId=db3a304314dca38901152838487312ae&fileId=db3a304314dca38901152855d78912ce Description: MOSFET N-CH 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.7mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
1+689.17 грн
30+417.65 грн
120+375.62 грн
В кошику  од. на суму  грн.
ESD0P8RFLE6327XTSA1 ESD0P8RFLE6327XTSA1 Infineon Technologies esd0p8rfl.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d0114922f25950fd5 Description: TVS DIODE 50VWM 15VC TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
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BCR401UE6327HTSA1 BCR401UE6327HTSA1 Infineon Technologies dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 378000 шт:
термін постачання 21-31 дні (днів)
3000+10.80 грн
6000+9.77 грн
15000+9.14 грн
30000+7.87 грн
75000+7.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BCR401WE6327HTSA1 BCR401WE6327HTSA1 Infineon Technologies bcr401w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407b0f84a0188 Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
товару немає в наявності
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BCR402WE6327HTSA1 BCR402WE6327HTSA1 Infineon Technologies bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSC016N03MSGATMA1 BSC016N03MSGATMA1 Infineon Technologies Infineon-BSC016N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4a19bb0334 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V
товару немає в наявності
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BSC020N03MSGATMA1 BSC020N03MSGATMA1 Infineon Technologies Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 31315 шт:
термін постачання 21-31 дні (днів)
3+137.68 грн
10+72.80 грн
100+54.17 грн
500+44.36 грн
1000+36.61 грн
2000+33.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC025N03LS G BSC025N03LS G Infineon Technologies download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1 Description: MOSFET N-CH 30V 100A TDSON-8
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC025N03MSGATMA1 BSC025N03MSGATMA1 Infineon Technologies Infineon-BSC025N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de52b02d034c Description: MOSFET N-CH 30V 100A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC030N03MSGATMA1 BSC030N03MSGATMA1 Infineon Technologies Infineon-BSC030N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de605dea0359 Description: MOSFET N-CH 30V 21A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 9768 шт:
термін постачання 21-31 дні (днів)
4+96.29 грн
10+59.62 грн
100+39.97 грн
500+29.28 грн
1000+26.48 грн
2000+24.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC042N03LSGATMA1 BSC042N03LSGATMA1 Infineon Technologies dgdl?fileId=db3a304319c6f18c0119e17c202f5ff7 Description: MOSFET N-CH 30V 20A/93A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
на замовлення 32652 шт:
термін постачання 21-31 дні (днів)
4+103.46 грн
10+63.07 грн
100+41.85 грн
500+30.71 грн
1000+27.95 грн
2000+25.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Infineon Technologies Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366 Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 4199 шт:
термін постачання 21-31 дні (днів)
4+104.25 грн
10+63.07 грн
100+41.92 грн
500+30.80 грн
1000+28.05 грн
2000+25.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 12392 шт:
термін постачання 21-31 дні (днів)
5+70.83 грн
10+44.22 грн
100+29.27 грн
500+21.52 грн
1000+18.35 грн
2000+17.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC050N03MSGATMA1 BSC050N03MSGATMA1 Infineon Technologies BSC050N03MSG.pdf Description: MOSFET N-CH 30V 16A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC057N03MSGATMA1 BSC057N03MSGATMA1 Infineon Technologies Infineon-BSC057N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de68c6ce037a Description: MOSFET N-CH 30V 15A/71A TDSON
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
4+79.58 грн
10+67.36 грн
100+51.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC080N03LSGATMA1 BSC080N03LSGATMA1 Infineon Technologies Infineon-BSC080N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b427c2683cbe Description: MOSFET N-CH 30V 14A/53A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC080N03MSGATMA1 BSC080N03MSGATMA1 Infineon Technologies Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383 Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC090N03LSGATMA1 BSC090N03LSGATMA1 Infineon Technologies Infineon-BSC090N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276e193c2f Description: MOSFET N-CH 30V 13A/48A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 21280 шт:
термін постачання 21-31 дні (днів)
13+26.26 грн
14+22.53 грн
100+19.60 грн
500+18.02 грн
1000+16.40 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BSC090N03MSGATMA1 BSC090N03MSGATMA1 Infineon Technologies Infineon-BSC090N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de715bb50390 Description: MOSFET N-CH 30V 12A/48A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03LSGATMA1 BSC100N03LSGATMA1 Infineon Technologies BSC100N03LS_G.pdf Description: MOSFET N-CH 30V 13A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03MSGATMA1 BSC100N03MSGATMA1 Infineon Technologies Infineon-BSC100N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de73c33c039c Description: MOSFET N-CH 30V 12A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
4+83.56 грн
10+50.35 грн
100+33.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 BSC120N03LSGATMA1 Infineon Technologies Infineon-BSC120N03LS-DS-v02_01-en.pdf?fileId=db3a3043183a955501189caf1e5e4010 Description: MOSFET N-CH 30V 12A/39A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
на замовлення 17381 шт:
термін постачання 21-31 дні (днів)
7+52.52 грн
10+34.18 грн
100+23.42 грн
500+16.82 грн
1000+14.72 грн
2000+13.76 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 BSC120N03MSGATMA1 Infineon Technologies Infineon-BSC120N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de761b1d03a5 Description: MOSFET N-CH 30V 11A/39A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 26435 шт:
термін постачання 21-31 дні (днів)
6+56.50 грн
10+35.10 грн
100+24.59 грн
500+18.94 грн
1000+16.01 грн
2000+15.54 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ035N03LSGATMA1 BSZ035N03LSGATMA1 Infineon Technologies BSZ035N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cefe327502e4 Description: MOSFET N-CH 30V 20A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
на замовлення 2382 шт:
термін постачання 21-31 дні (днів)
3+118.58 грн
10+72.73 грн
100+48.53 грн
500+35.83 грн
1000+32.70 грн
2000+30.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ035N03MSGATMA1 BSZ035N03MSGATMA1 Infineon Technologies BSZ035N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddeb998f02e7 Description: MOSFET N-CH 30V 18A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 11581 шт:
термін постачання 21-31 дні (днів)
4+100.27 грн
10+60.92 грн
100+40.29 грн
500+29.52 грн
1000+26.85 грн
2000+24.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 7257 шт:
термін постачання 21-31 дні (днів)
8+45.36 грн
11+29.89 грн
100+22.06 грн
500+19.51 грн
1000+16.81 грн
2000+16.60 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4 Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
на замовлення 1267 шт:
термін постачання 21-31 дні (днів)
5+71.62 грн
10+43.22 грн
100+28.16 грн
500+20.35 грн
1000+18.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSZ058N03LSGATMA1 BSZ058N03LSGATMA1 Infineon Technologies BSZ058N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3fa0a7e03f2 Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ058N03MSGATMA1 BSZ058N03MSGATMA1 Infineon Technologies BSZ058N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddee2ce902ed Description: MOSFET N-CH 30V 14A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 Infineon Technologies BSZ088N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cf18620d02eb Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 Infineon Technologies BSZ088N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddf12fe902f6 Description: MOSFET N-CH 30V 11A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 Infineon Technologies BSZ100N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4003e0a03f8 Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316 Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
8+41.38 грн
11+29.27 грн
100+22.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSZ130N03LSGATMA1 BSZ130N03LSGATMA1 Infineon Technologies BSZ130N03LS_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4035f8203fc Description: MOSFET N-CH 30V 10A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
на замовлення 27529 шт:
термін постачання 21-31 дні (днів)
5+66.85 грн
10+40.39 грн
100+26.22 грн
500+18.89 грн
1000+17.05 грн
2000+15.50 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 Infineon Technologies BSZ130N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de3b1fda0321 Description: MOSFET N-CH 30V 9A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
на замовлення 13775 шт:
термін постачання 21-31 дні (днів)
4+85.15 грн
10+51.80 грн
100+34.06 грн
500+24.78 грн
1000+22.47 грн
2000+20.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ESD1P0RFSE6327HTSA1 ESD1P0RFSE6327HTSA1 Infineon Technologies esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7 Description: TVS DIODE 70VWM 15VC SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
24VS2BE6327XT 24VS2BE6327XT Infineon Technologies Part_Number_Guide_Web.pdf Description: TVS DIODE 24VWM 41VC SOT23-3
товару немає в наявності
В кошику  од. на суму  грн.
ESD24VS2UE6327HTSA1 ESD24VS2UE6327HTSA1 Infineon Technologies Infineon-ESD24VS2U-DS-v01_01-en.pdf?fileId=db3a3043340fff53013413a2249d2ff3 Description: TVS DIODE 24VWM 41VC PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-SOT23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
на замовлення 40355 шт:
термін постачання 21-31 дні (днів)
10+31.83 грн
16+19.62 грн
100+13.22 грн
500+9.55 грн
1000+8.29 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ESD5V0S4USE6327HTSA1 ESD5V0S4USE6327HTSA1 Infineon Technologies esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04 Description: TVS DIODE 5VWM 13VC SOT3636
товару немає в наявності
В кошику  од. на суму  грн.
IPD031N03LGATMA1 IPD031N03LGATMA1 Infineon Technologies IP%28D%2CS%29031N03L_%20G.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD040N03LGATMA1 IPD040N03LGATMA1 Infineon Technologies IPD040N03LG_rev1.01.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
4+101.07 грн
10+61.54 грн
100+40.81 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
4+104.25 грн
10+63.22 грн
100+41.94 грн
500+30.78 грн
1000+28.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD060N03LGATMA1 IPD060N03LGATMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 34325 шт:
термін постачання 21-31 дні (днів)
6+60.48 грн
10+39.77 грн
100+29.49 грн
500+24.58 грн
1000+22.29 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPD075N03LGATMA1 IPD075N03LGATMA1 Infineon Technologies Infineon-IPD075N03LG-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30431936bc4b011951d824f83aeb Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
на замовлення 10205 шт:
термін постачання 21-31 дні (днів)
10+35.02 грн
12+25.98 грн
100+22.02 грн
500+18.12 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPD090N03LGATMA1 IPD090N03LGATMA1 Infineon Technologies Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181 Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 75513 шт:
термін постачання 21-31 дні (днів)
6+57.30 грн
10+38.16 грн
100+26.45 грн
500+22.02 грн
1000+19.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BCR401UE6327HTSA1 BCR401UE6327HTSA1 Infineon Technologies dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 382025 шт:
термін постачання 21-31 дні (днів)
9+38.20 грн
11+29.66 грн
25+27.13 грн
100+18.94 грн
250+17.15 грн
500+14.20 грн
1000+10.47 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSC025N03LS G BSC025N03LS G Infineon Technologies download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1 Description: MOSFET N-CH 30V 100A TDSON-8
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE6282GXUMA1 TLE6282GXUMA1 Infineon Technologies TLE6282G.pdf Description: IC MOTOR DRIVER 7.5V-60V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 7.5V ~ 60V
Applications: Automotive
Technology: Power MOSFET
Supplier Device Package: PG-DSO-20-45
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
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IRFR3706CPBF IRFR3706CPBF Infineon Technologies irfr3706cpbf.pdf Description: MOSFET N-CH 20V 75A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
товару немає в наявності
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IRF7534D1PBF IRF7534D1PBF Infineon Technologies IRF7534D1PbF.pdf description Description: MOSFET P-CH 20V 4.3A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
товару немає в наявності
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IRFR120NCPBF IRFR120NCPBF Infineon Technologies irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товару немає в наявності
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IRLR7807ZCPBF IRLR7807ZCPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 30V 43A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
товару немає в наявності
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IPD105N03LGATMA1 IP%28D%2CF%2CS%2CU%29105N03L%20G_Rev2010.pdf
IPD105N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
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IPD135N03LGXT IP%28D%2CF%2CS%2CU%29135N03L_G.pdf
IPD135N03LGXT
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
товару немає в наявності
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IPP04CN10NG IP(B,I,P)04CN10N%20G.pdf
IPP04CN10NG
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
товару немає в наявності
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IPP50R299CPXKSA1 Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc
IPP50R299CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPP50R350CPXKSA1 Infineon-IPP50R350CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01238540e43d66ad
IPP50R350CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
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ESD8V0R1B02LRHE6327XTSA1 ESD8V0R1B_Rev09.pdf
ESD8V0R1B02LRHE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESD8V0R1B02LSE6327XTSA1 ESD8V0R1B_Rev09.pdf
ESD8V0R1B02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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IPP60R250CPXKSA1 IPP60R250CP_rev2.0..pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304316f66ee8011744d1654a2fa7
IPP60R250CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+276.94 грн
50+211.40 грн
100+181.20 грн
500+151.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R075CPFKSA1 IPW60R075CP_rev2.2.pdf?folderId=db3a304314dca38901152838487312ae&fileId=db3a304314dca38901152855d78912ce
IPW60R075CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.7mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+689.17 грн
30+417.65 грн
120+375.62 грн
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ESD0P8RFLE6327XTSA1 esd0p8rfl.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d0114922f25950fd5
ESD0P8RFLE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 50VWM 15VC TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
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BCR401UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d
BCR401UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 378000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.80 грн
6000+9.77 грн
15000+9.14 грн
30000+7.87 грн
75000+7.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BCR401WE6327HTSA1 bcr401w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407b0f84a0188
BCR401WE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
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BCR402WE6327HTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Grade: Automotive
Qualification: AEC-Q101
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BSC016N03MSGATMA1 Infineon-BSC016N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4a19bb0334
BSC016N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V
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BSC020N03MSGATMA1 Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e
BSC020N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 31315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.68 грн
10+72.80 грн
100+54.17 грн
500+44.36 грн
1000+36.61 грн
2000+33.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC025N03LS G download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1
BSC025N03LS G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
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BSC025N03MSGATMA1 Infineon-BSC025N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de52b02d034c
BSC025N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
товару немає в наявності
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BSC030N03MSGATMA1 Infineon-BSC030N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de605dea0359
BSC030N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 9768 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.29 грн
10+59.62 грн
100+39.97 грн
500+29.28 грн
1000+26.48 грн
2000+24.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC042N03LSGATMA1 dgdl?fileId=db3a304319c6f18c0119e17c202f5ff7
BSC042N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/93A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
на замовлення 32652 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.46 грн
10+63.07 грн
100+41.85 грн
500+30.71 грн
1000+27.95 грн
2000+25.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC042N03MSGATMA1 Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366
BSC042N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 4199 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.25 грн
10+63.07 грн
100+41.92 грн
500+30.80 грн
1000+28.05 грн
2000+25.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC050N03LSGATMA1 Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b
BSC050N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 12392 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.83 грн
10+44.22 грн
100+29.27 грн
500+21.52 грн
1000+18.35 грн
2000+17.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC050N03MSGATMA1 BSC050N03MSG.pdf
BSC050N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
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BSC057N03MSGATMA1 Infineon-BSC057N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de68c6ce037a
BSC057N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/71A TDSON
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.58 грн
10+67.36 грн
100+51.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC080N03LSGATMA1 Infineon-BSC080N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b427c2683cbe
BSC080N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/53A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC080N03MSGATMA1 Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383
BSC080N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC090N03LSGATMA1 Infineon-BSC090N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276e193c2f
BSC090N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/48A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 21280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.26 грн
14+22.53 грн
100+19.60 грн
500+18.02 грн
1000+16.40 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BSC090N03MSGATMA1 Infineon-BSC090N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de715bb50390
BSC090N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/48A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03LSGATMA1 BSC100N03LS_G.pdf
BSC100N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03MSGATMA1 Infineon-BSC100N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de73c33c039c
BSC100N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.56 грн
10+50.35 грн
100+33.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 Infineon-BSC120N03LS-DS-v02_01-en.pdf?fileId=db3a3043183a955501189caf1e5e4010
BSC120N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/39A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
на замовлення 17381 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.52 грн
10+34.18 грн
100+23.42 грн
500+16.82 грн
1000+14.72 грн
2000+13.76 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 Infineon-BSC120N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de761b1d03a5
BSC120N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A/39A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 26435 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.50 грн
10+35.10 грн
100+24.59 грн
500+18.94 грн
1000+16.01 грн
2000+15.54 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ035N03LSGATMA1 BSZ035N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cefe327502e4
BSZ035N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
на замовлення 2382 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.58 грн
10+72.73 грн
100+48.53 грн
500+35.83 грн
1000+32.70 грн
2000+30.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ035N03MSGATMA1 BSZ035N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddeb998f02e7
BSZ035N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 11581 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.27 грн
10+60.92 грн
100+40.29 грн
500+29.52 грн
1000+26.85 грн
2000+24.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ050N03LSGATMA1 BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee
BSZ050N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 7257 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.36 грн
11+29.89 грн
100+22.06 грн
500+19.51 грн
1000+16.81 грн
2000+16.60 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSZ050N03MSGATMA1 BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4
BSZ050N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
на замовлення 1267 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.62 грн
10+43.22 грн
100+28.16 грн
500+20.35 грн
1000+18.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSZ058N03LSGATMA1 BSZ058N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3fa0a7e03f2
BSZ058N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ058N03MSGATMA1 BSZ058N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddee2ce902ed
BSZ058N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03LSGATMA1 BSZ088N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cf18620d02eb
BSZ088N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03MSGATMA1 BSZ088N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddf12fe902f6
BSZ088N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03LSGATMA1 BSZ100N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4003e0a03f8
BSZ100N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316
BSZ100N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.38 грн
11+29.27 грн
100+22.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSZ130N03LSGATMA1 BSZ130N03LS_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4035f8203fc
BSZ130N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
на замовлення 27529 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.85 грн
10+40.39 грн
100+26.22 грн
500+18.89 грн
1000+17.05 грн
2000+15.50 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de3b1fda0321
BSZ130N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
на замовлення 13775 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.15 грн
10+51.80 грн
100+34.06 грн
500+24.78 грн
1000+22.47 грн
2000+20.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ESD1P0RFSE6327HTSA1 esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7
ESD1P0RFSE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 70VWM 15VC SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
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24VS2BE6327XT Part_Number_Guide_Web.pdf
24VS2BE6327XT
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 41VC SOT23-3
товару немає в наявності
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ESD24VS2UE6327HTSA1 Infineon-ESD24VS2U-DS-v01_01-en.pdf?fileId=db3a3043340fff53013413a2249d2ff3
ESD24VS2UE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 41VC PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-SOT23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
на замовлення 40355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.83 грн
16+19.62 грн
100+13.22 грн
500+9.55 грн
1000+8.29 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ESD5V0S4USE6327HTSA1 esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04
ESD5V0S4USE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 13VC SOT3636
товару немає в наявності
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IPD031N03LGATMA1 IP%28D%2CS%29031N03L_%20G.pdf
IPD031N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
товару немає в наявності
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IPD040N03LGATMA1 IPD040N03LG_rev1.01.pdf
IPD040N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.07 грн
10+61.54 грн
100+40.81 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD050N03LGATMA1 Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f
IPD050N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.25 грн
10+63.22 грн
100+41.94 грн
500+30.78 грн
1000+28.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD060N03LGATMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPD060N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 34325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.48 грн
10+39.77 грн
100+29.49 грн
500+24.58 грн
1000+22.29 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPD075N03LGATMA1 Infineon-IPD075N03LG-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30431936bc4b011951d824f83aeb
IPD075N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
на замовлення 10205 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.02 грн
12+25.98 грн
100+22.02 грн
500+18.12 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPD090N03LGATMA1 Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181
IPD090N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 75513 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.30 грн
10+38.16 грн
100+26.45 грн
500+22.02 грн
1000+19.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BCR401UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d
BCR401UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 382025 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.20 грн
11+29.66 грн
25+27.13 грн
100+18.94 грн
250+17.15 грн
500+14.20 грн
1000+10.47 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSC025N03LS G download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1
BSC025N03LS G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE6282GXUMA1 TLE6282G.pdf
TLE6282GXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 7.5V-60V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 7.5V ~ 60V
Applications: Automotive
Technology: Power MOSFET
Supplier Device Package: PG-DSO-20-45
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
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IRFR3706CPBF irfr3706cpbf.pdf
IRFR3706CPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 75A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
товару немає в наявності
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IRF7534D1PBF description IRF7534D1PbF.pdf
IRF7534D1PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.3A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
товару немає в наявності
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IRFR120NCPBF irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d
IRFR120NCPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товару немає в наявності
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IRLR7807ZCPBF Part_Number_Guide_Web.pdf
IRLR7807ZCPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 43A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
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