Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123062) > Сторінка 104 з 2052

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IRGIB6B60KD116P IRGIB6B60KD116P Infineon Technologies irgib6b60kd.pdf Description: IGBT NPT 600V 11A TO220AB FP
Power - Max: 38 W
Current - Collector Pulsed (Icm): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Part Status: Obsolete
Gate Charge: 18.2 nC
Test Condition: 400V, 5A, 100Ohm, 15V
Switching Energy: 110µJ (on), 135µJ (off)
Td (on/off) @ 25°C: 25ns/215ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IR3637ASPBF IR3637ASPBF Infineon Technologies IR3637ASPbF.pdf description Description: IC REG CTRLR BUCK 8SOIC
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 76%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Topology: Buck
Frequency - Switching: 600kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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 Мінімальне замовлення: 475 шт
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IRLU7833-701PBF IRLU7833-701PBF Infineon Technologies irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3 Description: MOSFET N-CH 30V 140A IPAK
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I-PAK (LF701)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
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IRLU7843-701PBF IRLU7843-701PBF Infineon Technologies irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8 Description: MOSFET N-CH 30V 161A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: I-PAK (LF701)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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IRGS30B60KPBF IRGS30B60KPBF Infineon Technologies irgs30b60kpbf.pdf?fileId=5546d462533600a40153565aa8cd24ba Description: IGBT NPT 600V 78A D2PAK
Power - Max: 370 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 102 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 825µJ (off)
Td (on/off) @ 25°C: 46ns/185ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRLR3110ZPBF IRLR3110ZPBF Infineon Technologies irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a description Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
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IRGI4085-111PBF IRGI4085-111PBF Infineon Technologies irgi4085pbf.pdf Description: IGBT TRENCH 330V 28A TO220AB FP
Power - Max: 38 W
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 28 A
Part Status: Obsolete
Gate Charge: 84 nC
Test Condition: 196V, 25A, 10Ohm
Td (on/off) @ 25°C: 48ns/180ns
IGBT Type: Trench
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 1.5V @ 28V, 15A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IR3622MPBF IR3622MPBF Infineon Technologies IR3622MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bag
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IR3621MPBF Infineon Technologies IR3621(PbF).pdf Description: IC REG CTRLR BUCK 32MLPQ
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IR3622AMPBF IR3622AMPBF Infineon Technologies IR3622AMPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bag
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
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IP2003APBF Infineon Technologies IP2003APbF.pdf Description: IC REG BUCK ADJUSTABLE 40A LGA
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.3V
Synchronous Rectifier: Yes
Supplier Device Package: LGA (11x11)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 40A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: Power Block (LGA)
Packaging: Tray
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PVT322SPBF PVT322SPBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
1+698.19 грн
10+598.76 грн
25+571.74 грн
50+518.16 грн
100+500.36 грн
250+477.77 грн
500+453.79 грн
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IR4426SPBF IR4426SPBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 2403 шт:
термін постачання 21-31 дні (днів)
1+313.06 грн
10+227.29 грн
95+189.28 грн
190+170.46 грн
285+166.87 грн
570+161.61 грн
1045+155.19 грн
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IR2125SPBF IR2125SPBF Infineon Technologies infineon-ir2125-ds-en.pdf Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
2+264.24 грн
10+192.07 грн
45+168.48 грн
135+146.90 грн
Мінімальне замовлення: 2 шт
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AUXHA1021RTRL AUXHA1021RTRL Infineon Technologies IPS1021%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 4.3A
Voltage - Supply (Vcc/Vdd): Not Required
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IRS2011SPBF IRS2011SPBF Infineon Technologies INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 1A, 1A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IRG4RC10KDPBF IRG4RC10KDPBF Infineon Technologies IRG4RC10KDPbF.pdf Description: IGBT 600V 9A 38W DPAK
Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 250µJ (on), 140µJ (off)
Td (on/off) @ 25°C: 49ns/97ns
Supplier Device Package: D-Pak
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IR2161SPBF IR2161SPBF Infineon Technologies ir2161.pdf Description: IC HALOGEN CNTRL 70KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34kHz ~ 70kHz
Type: Halogen Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.5V
Supplier Device Package: 8-SOIC
Dimming: Yes
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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111-3053PBF 111-3053PBF Infineon Technologies ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e Description: IC REG CTRLR BUCK 14SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: Yes
Duty Cycle (Max): 80%
Output Phases: 1
Control Features: Current Limit, Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 14-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Topology: Buck
Frequency - Switching: 100kHz ~ 400kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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 Мінімальне замовлення: 165 шт
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IRFS3307PBF IRFS3307PBF Infineon Technologies irfs3307pbf.pdf?fileId=5546d462533600a40153563689292169 Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRS20124SPBF IRS20124SPBF Infineon Technologies IRS20124%28S%29PbF.pdf Description: IC LINE DRIVER 14SOIC
Number of Channels: 1
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Applications: Pre-Amplifier
Specifications: Class D
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Interface: Analog
Function: Line Driver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IR2177SPBF IR2177SPBF Infineon Technologies Infineon-IR2x77S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a7609854aaa Description: IC CURRENT SENSE 0.2% 16SOIC
Supplier Device Package: 16-SOIC
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.2%
Voltage - Input: 8V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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IRF3805S-7PPBF IRF3805S-7PPBF Infineon Technologies IRSDS18836-1.pdf?t.download=true&u=5oefqw description Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
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IR3084UMPBF IR3084UMPBF Infineon Technologies IR3084U.pdf Description: IC XPHASE CONTROL 28-MLPQ
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 Мінімальне замовлення: 200 шт
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IRS2184SPBF IRS2184SPBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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 Мінімальне замовлення: 3800 шт
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IR20153SPBF IR20153SPBF Infineon Technologies ir20153s.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.4V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2565 шт
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IRF7210PBF IRF7210PBF Infineon Technologies IRF7210PbF.pdf Description: MOSFET P-CH 12V 16A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 17179 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Vgs(th) (Max) @ Id: 600mV @ 500µA (Min)
Power Dissipation (Max): 2.5W (Ta)
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PVG612SPBF PVG612SPBF Infineon Technologies pvg612.pdf?fileId=5546d462533600a401535683c1892937 Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 4157 шт:
термін постачання 21-31 дні (днів)
1+549.41 грн
10+471.60 грн
25+450.29 грн
50+408.11 грн
100+394.11 грн
250+376.32 грн
500+357.43 грн
1000+345.14 грн
В кошику  од. на суму  грн.
PVN012SPBF PVN012SPBF Infineon Technologies pvn012.pdf?fileId=5546d462533600a401535683f185294d Description: SSR RELAY SPST-NO 2.5A 0-20V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100 mOhms
Voltage - Load: 0 V ~ 20 V
Supplier Device Package: 6-SMT
Load Current: 2.5 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
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IR2128SPBF IR2128SPBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3553 шт:
термін постачання 21-31 дні (днів)
2+197.60 грн
10+141.48 грн
95+116.19 грн
190+104.28 грн
285+101.89 грн
570+98.40 грн
1045+94.28 грн
2565+91.27 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21531SPBF IR21531SPBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 3800 шт
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PVN012ASPBF PVN012ASPBF Infineon Technologies PVN012ASPBF.pdf Description: SSR RELAY SPST-NO 4A 0-20V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 50 mOhms
Voltage - Load: 0 V ~ 20 V
Part Status: Obsolete
Supplier Device Package: 6-SMT
Load Current: 4 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
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PVI1050NSPBF PVI1050NSPBF Infineon Technologies Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Description: OPTOISO 2.5KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 2
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IRGS15B60KDPBF IRGS15B60KDPBF Infineon Technologies IRG%28B%2CS%2CSL%2915B60KDPbF.pdf Description: IGBT NPT 600V 31A D2PAK
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Part Status: Obsolete
Gate Charge: 56 nC
Test Condition: 400V, 15A, 22Ohm, 15V
Switching Energy: 220µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 34ns/184ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 208 W
Current - Collector Pulsed (Icm): 62 A
товару немає в наявності
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PVI5033RPBF PVI5033RPBF Infineon Technologies IRSDS10627-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 3.75KV 2CH PHVOLT 8-DIP
Voltage - Output (Max): 10V
Supplier Device Package: 8-DIP
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 5µA
Input Type: DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Photovoltaic
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 40 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
1+787.31 грн
50+585.18 грн
В кошику  од. на суму  грн.
IRF520NSTRRPBF IRF520NSTRRPBF Infineon Technologies irf520nspbf.pdf Description: MOSFET N-CH 100V 9.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PVAZ172NSPBF PVAZ172NSPBF Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 8-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 6122 шт:
термін постачання 21-31 дні (днів)
1+807.45 грн
10+693.30 грн
25+662.04 грн
50+599.96 грн
100+579.36 грн
250+553.19 грн
500+525.41 грн
1000+522.27 грн
В кошику  од. на суму  грн.
IRF6712STR1PBF IRF6712STR1PBF Infineon Technologies irf6712spbf.pdf?fileId=5546d462533600a4015355ecf4331a7c Description: MOSFET N-CH 25V 17A DIRECTFET
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PVT322ASPBF PVT322ASPBF Infineon Technologies IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
1+721.44 грн
10+618.98 грн
25+591.09 грн
50+535.68 грн
100+517.29 грн
250+493.93 грн
500+469.14 грн
1000+453.00 грн
В кошику  од. на суму  грн.
IR21141SSPBF IR21141SSPBF Infineon Technologies IR2114SSPbF.IR2214SSPbF.pdf Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tube
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2114SSPBF IR2114SSPBF Infineon Technologies Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tube
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2217 шт:
термін постачання 21-31 дні (днів)
1+512.99 грн
10+382.06 грн
55+335.24 грн
110+301.94 грн
275+288.58 грн
550+280.52 грн
1045+269.84 грн
В кошику  од. на суму  грн.
IRL3714STRRPBF IRL3714STRRPBF Infineon Technologies IRL3714(S,L)PbF.pdf Description: MOSFET N-CH 20V 36A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF Infineon Technologies irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3709STRRPBF IRF3709STRRPBF Infineon Technologies irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f Description: MOSFET N-CH 30V 90A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IR2214SSPBF IR2214SSPBF Infineon Technologies Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tube
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2232 шт:
термін постачання 21-31 дні (днів)
1+562.58 грн
10+417.95 грн
55+365.85 грн
110+329.26 грн
275+314.39 грн
550+305.42 грн
1045+293.65 грн
В кошику  од. на суму  грн.
IRFZ44VZSTRRPBF IRFZ44VZSTRRPBF Infineon Technologies irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219 Description: MOSFET N-CH 60V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL3715ZSTRRPBF IRL3715ZSTRRPBF Infineon Technologies irl3715z.pdf Description: MOSFET N-CH 20V 50A D2PAK
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IRF3706STRRPBF IRF3706STRRPBF Infineon Technologies IRF3706(S,L)PbF.pdf Description: MOSFET N-CH 20V 77A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3708STRRPBF IRF3708STRRPBF Infineon Technologies irf3708pbf.pdf?fileId=5546d462533600a4015355df7cf5193c Description: MOSFET N-CH 30V 62A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3707STRRPBF IRF3707STRRPBF Infineon Technologies IRF3707(S,L)PbF.pdf Description: MOSFET N-CH 30V 62A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3704ZSTRRPBF IRF3704ZSTRRPBF Infineon Technologies irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929 Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL3715ZCSTRRP IRL3715ZCSTRRP Infineon Technologies irl3715zcspbf.pdf Description: MOSFET N-CH 20V 50A D2PAK
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IRL5602STRRPBF IRL5602STRRPBF Infineon Technologies IRL5602SPbF.pdf Description: MOSFET P-CH 20V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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IRF3704ZCSTRRP IRF3704ZCSTRRP Infineon Technologies irf3704zcspbf.pdf Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRF3707ZCSTRRP IRF3707ZCSTRRP Infineon Technologies IRF3707ZC%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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IRL3715STRRPBF IRL3715STRRPBF Infineon Technologies IRL3715%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 54A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRL3714ZSTRRPBF IRL3714ZSTRRPBF Infineon Technologies IRL3714Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 36A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3707ZSTRRP IRF3707ZSTRRP Infineon Technologies irf3707zpbf.pdf?fileId=5546d462533600a4015355df74821938 Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF9530NSTRRPBF IRF9530NSTRRPBF Infineon Technologies irf9530nspbf.pdf?fileId=5546d462533600a401535611c2011dc3 Description: MOSFET P-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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IRLZ44ZSTRRPBF IRLZ44ZSTRRPBF Infineon Technologies irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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IRGIB6B60KD116P irgib6b60kd.pdf
IRGIB6B60KD116P
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO220AB FP
Power - Max: 38 W
Current - Collector Pulsed (Icm): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Part Status: Obsolete
Gate Charge: 18.2 nC
Test Condition: 400V, 5A, 100Ohm, 15V
Switching Energy: 110µJ (on), 135µJ (off)
Td (on/off) @ 25°C: 25ns/215ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IR3637ASPBF description IR3637ASPbF.pdf
IR3637ASPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 8SOIC
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 76%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Topology: Buck
Frequency - Switching: 600kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 475 шт
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IRLU7833-701PBF irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3
IRLU7833-701PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A IPAK
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I-PAK (LF701)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
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IRLU7843-701PBF irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8
IRLU7843-701PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: I-PAK (LF701)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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Мінімальне замовлення: 300 шт
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IRGS30B60KPBF irgs30b60kpbf.pdf?fileId=5546d462533600a40153565aa8cd24ba
IRGS30B60KPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 78A D2PAK
Power - Max: 370 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 102 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 825µJ (off)
Td (on/off) @ 25°C: 46ns/185ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRLR3110ZPBF description irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
IRLR3110ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
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IRGI4085-111PBF irgi4085pbf.pdf
IRGI4085-111PBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 330V 28A TO220AB FP
Power - Max: 38 W
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 28 A
Part Status: Obsolete
Gate Charge: 84 nC
Test Condition: 196V, 25A, 10Ohm
Td (on/off) @ 25°C: 48ns/180ns
IGBT Type: Trench
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 1.5V @ 28V, 15A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IR3622MPBF IR3622MPbF.pdf
IR3622MPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bag
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Мінімальне замовлення: 219 шт
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IR3621MPBF IR3621(PbF).pdf
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
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Мінімальне замовлення: 219 шт
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IR3622AMPBF IR3622AMPbF.pdf
IR3622AMPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bag
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
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Мінімальне замовлення: 219 шт
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IP2003APBF IP2003APbF.pdf
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 40A LGA
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.3V
Synchronous Rectifier: Yes
Supplier Device Package: LGA (11x11)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 40A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: Power Block (LGA)
Packaging: Tray
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PVT322SPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322SPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+698.19 грн
10+598.76 грн
25+571.74 грн
50+518.16 грн
100+500.36 грн
250+477.77 грн
500+453.79 грн
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IR4426SPBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 2403 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+313.06 грн
10+227.29 грн
95+189.28 грн
190+170.46 грн
285+166.87 грн
570+161.61 грн
1045+155.19 грн
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IR2125SPBF infineon-ir2125-ds-en.pdf
IR2125SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+264.24 грн
10+192.07 грн
45+168.48 грн
135+146.90 грн
Мінімальне замовлення: 2 шт
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AUXHA1021RTRL IPS1021%28S%2CR%29PbF.pdf
AUXHA1021RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 4.3A
Voltage - Supply (Vcc/Vdd): Not Required
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IRS2011SPBF description INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
IRS2011SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 1A, 1A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IRG4RC10KDPBF IRG4RC10KDPbF.pdf
IRG4RC10KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 9A 38W DPAK
Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 250µJ (on), 140µJ (off)
Td (on/off) @ 25°C: 49ns/97ns
Supplier Device Package: D-Pak
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IR2161SPBF ir2161.pdf
IR2161SPBF
Виробник: Infineon Technologies
Description: IC HALOGEN CNTRL 70KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34kHz ~ 70kHz
Type: Halogen Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.5V
Supplier Device Package: 8-SOIC
Dimming: Yes
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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111-3053PBF ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e
111-3053PBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: Yes
Duty Cycle (Max): 80%
Output Phases: 1
Control Features: Current Limit, Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 14-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Topology: Buck
Frequency - Switching: 100kHz ~ 400kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 165 шт
В кошику  од. на суму  грн.
IRFS3307PBF irfs3307pbf.pdf?fileId=5546d462533600a40153563689292169
IRFS3307PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRS20124SPBF IRS20124%28S%29PbF.pdf
IRS20124SPBF
Виробник: Infineon Technologies
Description: IC LINE DRIVER 14SOIC
Number of Channels: 1
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Applications: Pre-Amplifier
Specifications: Class D
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Interface: Analog
Function: Line Driver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IR2177SPBF Infineon-IR2x77S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a7609854aaa
IR2177SPBF
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 0.2% 16SOIC
Supplier Device Package: 16-SOIC
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.2%
Voltage - Input: 8V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
товару немає в наявності
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IRF3805S-7PPBF description IRSDS18836-1.pdf?t.download=true&u=5oefqw
IRF3805S-7PPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
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IR3084UMPBF IR3084U.pdf
IR3084UMPBF
Виробник: Infineon Technologies
Description: IC XPHASE CONTROL 28-MLPQ
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
IRS2184SPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3800 шт
В кошику  од. на суму  грн.
IR20153SPBF ir20153s.pdf
IR20153SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.4V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2565 шт
В кошику  од. на суму  грн.
IRF7210PBF IRF7210PbF.pdf
IRF7210PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 17179 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Vgs(th) (Max) @ Id: 600mV @ 500µA (Min)
Power Dissipation (Max): 2.5W (Ta)
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PVG612SPBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
PVG612SPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 4157 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+549.41 грн
10+471.60 грн
25+450.29 грн
50+408.11 грн
100+394.11 грн
250+376.32 грн
500+357.43 грн
1000+345.14 грн
В кошику  од. на суму  грн.
PVN012SPBF pvn012.pdf?fileId=5546d462533600a401535683f185294d
PVN012SPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100 mOhms
Voltage - Load: 0 V ~ 20 V
Supplier Device Package: 6-SMT
Load Current: 2.5 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
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IR2128SPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR2128SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3553 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+197.60 грн
10+141.48 грн
95+116.19 грн
190+104.28 грн
285+101.89 грн
570+98.40 грн
1045+94.28 грн
2565+91.27 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21531SPBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3800 шт
В кошику  од. на суму  грн.
PVN012ASPBF PVN012ASPBF.pdf
PVN012ASPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 4A 0-20V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 50 mOhms
Voltage - Load: 0 V ~ 20 V
Part Status: Obsolete
Supplier Device Package: 6-SMT
Load Current: 4 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
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PVI1050NSPBF Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBF
Виробник: Infineon Technologies
Description: OPTOISO 2.5KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 2
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IRGS15B60KDPBF IRG%28B%2CS%2CSL%2915B60KDPbF.pdf
IRGS15B60KDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 31A D2PAK
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Part Status: Obsolete
Gate Charge: 56 nC
Test Condition: 400V, 15A, 22Ohm, 15V
Switching Energy: 220µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 34ns/184ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 208 W
Current - Collector Pulsed (Icm): 62 A
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PVI5033RPBF IRSDS10627-1.pdf?t.download=true&u=5oefqw
PVI5033RPBF
Виробник: Infineon Technologies
Description: OPTOISO 3.75KV 2CH PHVOLT 8-DIP
Voltage - Output (Max): 10V
Supplier Device Package: 8-DIP
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 5µA
Input Type: DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Photovoltaic
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 40 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+787.31 грн
50+585.18 грн
В кошику  од. на суму  грн.
IRF520NSTRRPBF irf520nspbf.pdf
IRF520NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PVAZ172NSPBF pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 8-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 6122 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+807.45 грн
10+693.30 грн
25+662.04 грн
50+599.96 грн
100+579.36 грн
250+553.19 грн
500+525.41 грн
1000+522.27 грн
В кошику  од. на суму  грн.
IRF6712STR1PBF irf6712spbf.pdf?fileId=5546d462533600a4015355ecf4331a7c
IRF6712STR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
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В кошику  од. на суму  грн.
PVT322ASPBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
PVT322ASPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+721.44 грн
10+618.98 грн
25+591.09 грн
50+535.68 грн
100+517.29 грн
250+493.93 грн
500+469.14 грн
1000+453.00 грн
В кошику  од. на суму  грн.
IR21141SSPBF IR2114SSPbF.IR2214SSPbF.pdf
IR21141SSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tube
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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IR2114SSPBF Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b
IR2114SSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tube
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2217 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+512.99 грн
10+382.06 грн
55+335.24 грн
110+301.94 грн
275+288.58 грн
550+280.52 грн
1045+269.84 грн
В кошику  од. на суму  грн.
IRL3714STRRPBF IRL3714(S,L)PbF.pdf
IRL3714STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFZ44ZSTRRPBF irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c
IRFZ44ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
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Мінімальне замовлення: 800 шт
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IRF3709STRRPBF irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f
IRF3709STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IR2214SSPBF Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b
IR2214SSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tube
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2232 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+562.58 грн
10+417.95 грн
55+365.85 грн
110+329.26 грн
275+314.39 грн
550+305.42 грн
1045+293.65 грн
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IRFZ44VZSTRRPBF irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219
IRFZ44VZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL3715ZSTRRPBF irl3715z.pdf
IRL3715ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK
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IRF3706STRRPBF IRF3706(S,L)PbF.pdf
IRF3706STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3708STRRPBF irf3708pbf.pdf?fileId=5546d462533600a4015355df7cf5193c
IRF3708STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 62A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3707STRRPBF IRF3707(S,L)PbF.pdf
IRF3707STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 62A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3704ZSTRRPBF irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929
IRF3704ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL3715ZCSTRRP irl3715zcspbf.pdf
IRL3715ZCSTRRP
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK
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IRL5602STRRPBF IRL5602SPbF.pdf
IRL5602STRRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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IRF3704ZCSTRRP irf3704zcspbf.pdf
IRF3704ZCSTRRP
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3707ZCSTRRP IRF3707ZC%28S%2CL%29PbF.pdf
IRF3707ZCSTRRP
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 800 шт
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IRL3715STRRPBF IRL3715%28S%2CL%29PbF.pdf
IRL3715STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRL3714ZSTRRPBF IRL3714Z(S,L)PbF.pdf
IRL3714ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3707ZSTRRP irf3707zpbf.pdf?fileId=5546d462533600a4015355df74821938
IRF3707ZSTRRP
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF9530NSTRRPBF irf9530nspbf.pdf?fileId=5546d462533600a401535611c2011dc3
IRF9530NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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IRLZ44ZSTRRPBF irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a
IRLZ44ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
товару немає в наявності
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