Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149481) > Сторінка 2480 з 2492

Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 498 747 996 1245 1494 1743 1992 2241 2475 2476 2477 2478 2479 2480 2481 2482 2483 2484 2485 2490 2492  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES IDP15E65D1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 120A; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику  од. на суму  грн.
BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
на замовлення 1511 шт:
термін постачання 21-30 дні (днів)
63+7.07 грн
72+5.74 грн
77+5.33 грн
90+4.59 грн
100+4.25 грн
500+3.49 грн
1000+3.30 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
4+127.17 грн
10+64.78 грн
25+62.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB7734PBF IRFB7734PBF INFINEON TECHNOLOGIES IRFB7734PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
2+255.04 грн
10+195.99 грн
20+177.13 грн
30+173.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 603 шт:
термін постачання 21-30 дні (днів)
3+180.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1EDC30I12MHXUMA1 1EDC30I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 998 шт:
термін постачання 21-30 дні (днів)
3+194.29 грн
10+146.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 2091 шт:
термін постачання 21-30 дні (днів)
4+114.81 грн
10+94.31 грн
50+81.19 грн
100+75.45 грн
250+72.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
TLD1314ELXUMA1 TLD1314ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
товару немає в наявності
В кошику  од. на суму  грн.
IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 795 шт:
термін постачання 21-30 дні (днів)
1+451.28 грн
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DD340N22SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
DD340N16SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
DD340N18S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
IRF7469TRPBF IRF7469TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP330P10NMAKSA1 INFINEON TECHNOLOGIES Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 62A; 300W; PG-TO220-3
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 27.1mΩ
Mounting: THT
Kind of channel: enhancement
на замовлення 598 шт:
термін постачання 21-30 дні (днів)
50+190.76 грн
200+159.91 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
TLE7250GVIOXUMA2 INFINEON TECHNOLOGIES Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56 Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 52500 шт:
термін постачання 21-30 дні (днів)
2500+108.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRF100P219AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500F100K1024ACXQSA1 XMC4500F100K1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500E144F1024ACXQSA1 XMC4500E144F1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500E144X1024ACXQSA1 XMC4500E144X1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
товару немає в наявності
В кошику  од. на суму  грн.
BTN8962TAAUMA1 BTN8962TAAUMA1 INFINEON TECHNOLOGIES BTN8962TA.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Output current: -27...30A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
On-state resistance: 14.2mΩ
Operating voltage: 5.5...40V DC
Application: DC motors
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
на замовлення 586 шт:
термін постачання 21-30 дні (днів)
2+340.89 грн
10+241.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES BCR08PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
на замовлення 2735 шт:
термін постачання 21-30 дні (днів)
40+12.19 грн
45+10.00 грн
100+8.86 грн
500+7.71 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BCR08PNH6327XTSA1 INFINEON TECHNOLOGIES bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
3000+5.30 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Protection: overheating OTP
на замовлення 1566 шт:
термін постачання 21-30 дні (днів)
12+38.86 грн
16+26.08 грн
25+25.59 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 INFINEON TECHNOLOGIES SPP15P10PLHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
S25FL064LABMFA003 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 108MHz
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES IPW60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 IPW60R160P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF150P220AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC50N04S5-5R8 IPC50N04S5-5R8 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
2+251.69 грн
10+167.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Operating temperature: -25...125°C
Output current: -700...500mA
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
Number of channels: 2
Supply voltage: 8...16.6V DC
Voltage class: 200V
Topology: buck
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: high-/low-side; LED driver
Kind of package: tube
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
6+73.81 грн
10+68.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R099CPXKSA1 IPP60R099CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59457F5CAAA71BF&compId=IPP60R099CP-DTE.pdf?ci_sign=58cf3965cfc8109487e20bd8d33b892067a49653 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
2+398.30 грн
10+312.44 грн
25+287.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
2+331.18 грн
3+276.36 грн
10+261.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R125CPXKSA1 IPP60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+513.10 грн
В кошику  од. на суму  грн.
IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES IPP60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.165Ω
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 192W
Drain-source voltage: 600V
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
2+241.98 грн
10+207.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
2+384.17 грн
10+296.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R299CPXKSA1 IPP60R299CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
4+121.37 грн
10+115.63 грн
50+104.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP60R160P6XKSA1 IPP60R160P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949AA297D091BF&compId=IPP60R160P6-DTE.pdf?ci_sign=7f69625d6b7ccc50bdebc8e093fd2059a469e2c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
3+166.91 грн
10+146.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R125C6XKSA1 IPP60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945AE6D53F51BF&compId=IPP60R125C6-DTE.pdf?ci_sign=cb3192ecc3b12df96459b035fc86ddf06d8a84f8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R022S7XKSA1 IPP60R022S7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 390W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 375A
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R080P7 IPP60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AE924C1D4A508A14&compId=IPP60R080P7.pdf?ci_sign=7acf8b405e5a5445a1cfbb7a2bbb797c5709f3ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280P7 IPP60R280P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2D56A4027A749&compId=IPP60R280P7.pdf?ci_sign=d3e6a2bf46f2739688b3d650a2c349effce4428a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R040C7XKSA1 IPP60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A9491AA591BF&compId=IPP60R040C7-DTE.pdf?ci_sign=c417b0959efb0186cff5427e8e587a59f63375d8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R125P6XKSA1 IPP60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A1D5CDA931BF&compId=IPP60R125P6-DTE.pdf?ci_sign=efad1efd398c54219921fe1d04530a5ad86ec065 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 196 шт:
термін постачання 21-30 дні (днів)
3+159.85 грн
10+133.67 грн
50+123.83 грн
100+118.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280CFD7 IPP60R280CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7B62D76E074A&compId=IPP60R280CFD7.pdf?ci_sign=36d68e51f2886998836337e5223819a9871553bf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280E6XKSA1 IPP60R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59465D6EA7BD1BF&compId=IPP60R280E6-DTE.pdf?ci_sign=4226e7b7164af0bd3fbeeb2a4824424fdb783737 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280P6XKSA1 IPP60R280P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949D1257D231BF&compId=IPP60R280P6-DTE.pdf?ci_sign=d700b95c7f2dc02c97e529cdc4386805667401cc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R330P6XKSA1 IPP60R330P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949EBC6C5371BF&compId=IPP60R330P6-DTE.pdf?ci_sign=835db5ec47fa2437bf293263ec6006b6202591e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380C6XKSA1 IPP60R380C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944278B8EFD1BF&compId=IPP60R380C6-DTE.pdf?ci_sign=feb2bbac4dafe8cc7a7757c9ffa2197f7917bd82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IDP15E65D1XKSA1 IDP15E65D1.pdf
IDP15E65D1XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 120A; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику  од. на суму  грн.
BAT6405E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
на замовлення 1511 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.07 грн
72+5.74 грн
77+5.33 грн
90+4.59 грн
100+4.25 грн
500+3.49 грн
1000+3.30 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
IRFB7534PBF irfs7534pbf.pdf
IRFB7534PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.17 грн
10+64.78 грн
25+62.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB7734PBF IRFB7734PBF.pdf
IRFB7734PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+255.04 грн
10+195.99 грн
20+177.13 грн
30+173.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EDC60I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 603 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+180.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1EDC30I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC30I12MHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 998 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+194.29 грн
10+146.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI05I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 2091 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.81 грн
10+94.31 грн
50+81.19 грн
100+75.45 грн
250+72.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
TLD1314ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150
TLD1314ELXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
товару немає в наявності
В кошику  од. на суму  грн.
IPB107N20NAATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1
IPB107N20NAATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 795 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+451.28 грн
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DD340N22SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
DD340N16SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
DD340N18S pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
IRF7469TRPBF pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28
IRF7469TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 62A; 300W; PG-TO220-3
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 27.1mΩ
Mounting: THT
Kind of channel: enhancement
на замовлення 598 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+190.76 грн
200+159.91 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
TLE7250GVIOXUMA2 Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 52500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+108.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500F100K1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100K1024ACXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500E144F1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500E144F1024ACXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500E144X1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500E144X1024ACXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
товару немає в наявності
В кошику  од. на суму  грн.
BTN8962TAAUMA1 BTN8962TA.pdf
BTN8962TAAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Output current: -27...30A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
On-state resistance: 14.2mΩ
Operating voltage: 5.5...40V DC
Application: DC motors
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
на замовлення 586 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+340.89 грн
10+241.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCR08PNH6327 BCR08PNH6327.pdf
BCR08PNH6327
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
на замовлення 2735 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
40+12.19 грн
45+10.00 грн
100+8.86 грн
500+7.71 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BCR08PNH6327XTSA1 bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.30 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FP20R06W1E3B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e
FP20R06W1E3B11BOMA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Protection: overheating OTP
на замовлення 1566 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.86 грн
16+26.08 грн
25+25.59 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SPP15P10PLHXKSA1 SPP15P10PLHXKSA1-DTE.pdf
SPP15P10PLHXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
S25FL064LABMFA003 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 108MHz
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R125C6FKSA1 IPW60R125C6-DTE.pdf
IPW60R125C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965
IPW60R070C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b
IPW60R160P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPI020N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a
IPI020N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC50N04S5-5R8 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c
IPC50N04S5-5R8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05
IPP60R199CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+251.69 грн
10+167.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Operating temperature: -25...125°C
Output current: -700...500mA
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
Number of channels: 2
Supply voltage: 8...16.6V DC
Voltage class: 200V
Topology: buck
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: high-/low-side; LED driver
Kind of package: tube
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+73.81 грн
10+68.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP65R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f
IPP65R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R099CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59457F5CAAA71BF&compId=IPP60R099CP-DTE.pdf?ci_sign=58cf3965cfc8109487e20bd8d33b892067a49653
IPP60R099CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+398.30 грн
10+312.44 грн
25+287.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895
IPP60R099P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+331.18 грн
3+276.36 грн
10+261.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a
IPP60R125CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+513.10 грн
В кошику  од. на суму  грн.
IPP60R165CPXKSA1 IPP60R165CP-DTE.pdf
IPP60R165CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.165Ω
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 192W
Drain-source voltage: 600V
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+241.98 грн
10+207.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea
IPP60R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+384.17 грн
10+296.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R299CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f
IPP60R299CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+121.37 грн
10+115.63 грн
50+104.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP60R160P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949AA297D091BF&compId=IPP60R160P6-DTE.pdf?ci_sign=7f69625d6b7ccc50bdebc8e093fd2059a469e2c0
IPP60R160P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+166.91 грн
10+146.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945AE6D53F51BF&compId=IPP60R125C6-DTE.pdf?ci_sign=cb3192ecc3b12df96459b035fc86ddf06d8a84f8
IPP60R125C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 390W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 375A
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AE924C1D4A508A14&compId=IPP60R080P7.pdf?ci_sign=7acf8b405e5a5445a1cfbb7a2bbb797c5709f3ef
IPP60R080P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2D56A4027A749&compId=IPP60R280P7.pdf?ci_sign=d3e6a2bf46f2739688b3d650a2c349effce4428a
IPP60R280P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A9491AA591BF&compId=IPP60R040C7-DTE.pdf?ci_sign=c417b0959efb0186cff5427e8e587a59f63375d8
IPP60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A1D5CDA931BF&compId=IPP60R125P6-DTE.pdf?ci_sign=efad1efd398c54219921fe1d04530a5ad86ec065
IPP60R125P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 196 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+159.85 грн
10+133.67 грн
50+123.83 грн
100+118.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82
IPP60R160C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7B62D76E074A&compId=IPP60R280CFD7.pdf?ci_sign=36d68e51f2886998836337e5223819a9871553bf
IPP60R280CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59465D6EA7BD1BF&compId=IPP60R280E6-DTE.pdf?ci_sign=4226e7b7164af0bd3fbeeb2a4824424fdb783737
IPP60R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949D1257D231BF&compId=IPP60R280P6-DTE.pdf?ci_sign=d700b95c7f2dc02c97e529cdc4386805667401cc
IPP60R280P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R330P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949EBC6C5371BF&compId=IPP60R330P6-DTE.pdf?ci_sign=835db5ec47fa2437bf293263ec6006b6202591e4
IPP60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944278B8EFD1BF&compId=IPP60R380C6-DTE.pdf?ci_sign=feb2bbac4dafe8cc7a7757c9ffa2197f7917bd82
IPP60R380C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R385CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469
IPP60R385CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 498 747 996 1245 1494 1743 1992 2241 2475 2476 2477 2478 2479 2480 2481 2482 2483 2484 2485 2490 2492  [ Наступна Сторінка >> ]