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IRFL4105TRPBF IRFL4105TRPBF Infineon Technologies irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8 Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
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IRFL4310TRPBF IRFL4310TRPBF Infineon Technologies irfl4310pbf.pdf?fileId=5546d462533600a40153562804ba1fbc Description: MOSFET N-CH 100V 1.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 8562 шт:
термін постачання 21-31 дні (днів)
5+75.17 грн
10+45.29 грн
100+29.59 грн
500+21.43 грн
1000+19.39 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFZ44NSTRLPBF IRFZ44NSTRLPBF Infineon Technologies infineon-irfz44ns-datasheet-en.pdf Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 9651 шт:
термін постачання 21-31 дні (днів)
3+120.11 грн
10+73.58 грн
100+49.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFZ46NSTRLPBF IRFZ46NSTRLPBF Infineon Technologies infineon-irfz46ns-datasheet-en.pdf Description: MOSFET N-CH 55V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V
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IRFZ48NSTRLPBF IRFZ48NSTRLPBF Infineon Technologies irfz48nspbf.pdf?fileId=5546d462533600a40153563eb276222e Description: MOSFET N-CH 55V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 25 V
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
3+135.61 грн
10+83.20 грн
100+55.99 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRL1404STRLPBF IRL1404STRLPBF Infineon Technologies irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
2+282.07 грн
10+177.90 грн
100+124.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL2910STRLPBF IRL2910STRLPBF Infineon Technologies irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 4005 шт:
термін постачання 21-31 дні (днів)
2+205.35 грн
10+127.90 грн
100+88.10 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL530NSTRLPBF IRL530NSTRLPBF Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 12838 шт:
термін постачання 21-31 дні (днів)
3+130.96 грн
10+80.22 грн
100+53.90 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRL540NSTRLPBF IRL540NSTRLPBF Infineon Technologies irl540nspbf.pdf?fileId=5546d462533600a40153565fcbaa2569 Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 19646 шт:
термін постачання 21-31 дні (днів)
2+159.63 грн
10+98.50 грн
100+66.86 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLZ44NSTRLPBF IRLZ44NSTRLPBF Infineon Technologies irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727 Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 7652 шт:
термін постачання 21-31 дні (днів)
3+142.58 грн
10+87.83 грн
100+59.47 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BCR401WE6327HTSA1 BCR401WE6327HTSA1 Infineon Technologies bcr401w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407b0f84a0188 Description: IC LED DRVR LIN 60MA SOT343-3D
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 18V
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT343-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Operating Temperature: 150°C (TJ)
Type: Linear
товару немає в наявності
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BCR402WE6327HTSA1 BCR402WE6327HTSA1 Infineon Technologies bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Description: IC LED DRVR LIN 60MA SOT343-3D
Qualification: AEC-Q101
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT343-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 18V
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BSC016N03MSGATMA1 BSC016N03MSGATMA1 Infineon Technologies Infineon-BSC016N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4a19bb0334 Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC020N03MSGATMA1 BSC020N03MSGATMA1 Infineon Technologies Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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BSC025N03LS G BSC025N03LS G Infineon Technologies download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1 Description: MOSFET N-CH 30V 100A TDSON-8
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC025N03MSGATMA1 BSC025N03MSGATMA1 Infineon Technologies Infineon-BSC025N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de52b02d034c Description: MOSFET N-CH 30V 100A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC030N03MSGATMA1 BSC030N03MSGATMA1 Infineon Technologies Infineon-BSC030N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de605dea0359 Description: MOSFET N-CH 30V 21A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+22.11 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC042N03LSGATMA1 BSC042N03LSGATMA1 Infineon Technologies dgdl?fileId=db3a304319c6f18c0119e17c202f5ff7 Description: MOSFET N-CH 30V 20A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+18.07 грн
10000+16.14 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Infineon Technologies Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366 Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+16.84 грн
10000+15.02 грн
15000+14.42 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC050N03MSGATMA1 BSC050N03MSGATMA1 Infineon Technologies BSC050N03MSG.pdf Description: MOSFET N-CH 30V 16A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC057N03LSGATMA1 BSC057N03LSGATMA1 Infineon Technologies Infineon-BSC057N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4274af23bf7 Description: MOSFET N-CH 30V 17A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+23.75 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC057N03MSGATMA1 BSC057N03MSGATMA1 Infineon Technologies Infineon-BSC057N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de68c6ce037a Description: MOSFET N-CH 30V 15A/71A TDSON
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC080N03LSGATMA1 BSC080N03LSGATMA1 Infineon Technologies Infineon-BSC080N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b427c2683cbe Description: MOSFET N-CH 30V 14A/53A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC080N03MSGATMA1 BSC080N03MSGATMA1 Infineon Technologies Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383 Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC090N03LSGATMA1 BSC090N03LSGATMA1 Infineon Technologies Infineon-BSC090N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276e193c2f Description: MOSFET N-CH 30V 13A/48A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC090N03MSGATMA1 BSC090N03MSGATMA1 Infineon Technologies Infineon-BSC090N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de715bb50390 Description: MOSFET N-CH 30V 12A/48A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03LSGATMA1 BSC100N03LSGATMA1 Infineon Technologies BSC100N03LS_G.pdf Description: MOSFET N-CH 30V 13A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03MSGATMA1 BSC100N03MSGATMA1 Infineon Technologies Infineon-BSC100N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de73c33c039c Description: MOSFET N-CH 30V 12A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 BSC120N03LSGATMA1 Infineon Technologies Infineon-BSC120N03LS-DS-v02_01-en.pdf?fileId=db3a3043183a955501189caf1e5e4010 Description: MOSFET N-CH 30V 12A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 4900 шт
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 BSC120N03MSGATMA1 Infineon Technologies Infineon-BSC120N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de761b1d03a5 Description: MOSFET N-CH 30V 11A/39A TDSON
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+13.18 грн
10000+11.74 грн
15000+11.25 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ035N03LSGATMA1 BSZ035N03LSGATMA1 Infineon Technologies BSZ035N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cefe327502e4 Description: MOSFET N-CH 30V 20A/40A 8TSDSON
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ035N03MSGATMA1 BSZ035N03MSGATMA1 Infineon Technologies BSZ035N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddeb998f02e7 Description: MOSFET N-CH 30V 18A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+22.79 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+21.45 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies infineon-bsz050n03ms-g-datasheet-en.pdf Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ058N03LSGATMA1 BSZ058N03LSGATMA1 Infineon Technologies BSZ058N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3fa0a7e03f2 Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ058N03MSGATMA1 BSZ058N03MSGATMA1 Infineon Technologies BSZ058N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddee2ce902ed Description: MOSFET N-CH 30V 14A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 Infineon Technologies BSZ088N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cf18620d02eb Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 Infineon Technologies BSZ088N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddf12fe902f6 Description: MOSFET N-CH 30V 11A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316 Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ130N03LSGATMA1 BSZ130N03LSGATMA1 Infineon Technologies BSZ130N03LS_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4035f8203fc Description: MOSFET N-CH 30V 10A/35A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+13.80 грн
10000+12.29 грн
15000+11.78 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 Infineon Technologies BSZ130N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de3b1fda0321 Description: MOSFET N-CH 30V 9A/35A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
ESD1P0RFSE6327HTSA1 ESD1P0RFSE6327HTSA1 Infineon Technologies esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7 Description: TVS DIODE 70VWM 15VC SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD1P0RFWE6327HTSA1 ESD1P0RFWE6327HTSA1 Infineon Technologies esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7 Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
24VS2BE6327XT 24VS2BE6327XT Infineon Technologies Part_Number_Guide_Web.pdf Description: TVS DIODE 24VWM 41VC SOT23-3
товару немає в наявності
В кошику  од. на суму  грн.
ESD24VS2UE6327HTSA1 ESD24VS2UE6327HTSA1 Infineon Technologies Infineon-ESD24VS2U-DS-v01_01-en.pdf?fileId=db3a3043340fff53013413a2249d2ff3 Description: TVS DIODE 24VWM 41VC PGSOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-SOT23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESD5V0S4USE6327HTSA1 ESD5V0S4USE6327HTSA1 Infineon Technologies esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04 Description: TVS DIODE 5VWM 13VC SOT3636
товару немає в наявності
В кошику  од. на суму  грн.
IPD031N03LGATMA1 IPD031N03LGATMA1 Infineon Technologies IP%28D%2CS%29031N03L_%20G.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+39.91 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+30.88 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD060N03LGATMA1 IPD060N03LGATMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
2500+28.86 грн
5000+25.77 грн
7500+24.73 грн
12500+22.12 грн
17500+21.48 грн
25000+21.27 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD075N03LGATMA1 IPD075N03LGATMA1 Infineon Technologies infineon-ipd075n03lg-datasheet-en.pdf Description: MOSFET N-CH 30V 50A TO252-3
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+18.17 грн
5000+16.12 грн
7500+15.42 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD090N03LGATMA1 IPD090N03LGATMA1 Infineon Technologies Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181 Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
2500+23.05 грн
5000+20.49 грн
7500+19.63 грн
12500+17.51 грн
17500+16.97 грн
25000+16.45 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD105N03LGATMA1 IPD105N03LGATMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29105N03L%20G_Rev2010.pdf Description: MOSFET N-CH 30V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD135N03LGXT IPD135N03LGXT Infineon Technologies IP%28D%2CF%2CS%2CU%29135N03L_G.pdf Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPP04CN10NG IPP04CN10NG Infineon Technologies IP%28B%2CI%2CP%2904CN10N%20G.pdf Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP50R299CPXKSA1 IPP50R299CPXKSA1 Infineon Technologies Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
товару немає в наявності
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IPP50R350CPXKSA1 IPP50R350CPXKSA1 Infineon Technologies Infineon-IPP50R350CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01238540e43d66ad Description: MOSFET N-CH 550V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
ESD8V0R1B02LRHE6327XTSA1 ESD8V0R1B02LRHE6327XTSA1 Infineon Technologies ESD8V0R1B_Rev09.pdf Description: TVS DIODE 14VWM 28VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ESD8V0R1B02LSE6327XTSA1 ESD8V0R1B02LSE6327XTSA1 Infineon Technologies ESD8V0R1B_Rev09.pdf Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IRFL4105TRPBF irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8
IRFL4105TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товару немає в наявності
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IRFL4310TRPBF irfl4310pbf.pdf?fileId=5546d462533600a40153562804ba1fbc
IRFL4310TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 8562 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+75.17 грн
10+45.29 грн
100+29.59 грн
500+21.43 грн
1000+19.39 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFZ44NSTRLPBF infineon-irfz44ns-datasheet-en.pdf
IRFZ44NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 9651 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+120.11 грн
10+73.58 грн
100+49.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFZ46NSTRLPBF infineon-irfz46ns-datasheet-en.pdf
IRFZ46NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFZ48NSTRLPBF irfz48nspbf.pdf?fileId=5546d462533600a40153563eb276222e
IRFZ48NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 25 V
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+135.61 грн
10+83.20 грн
100+55.99 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRL1404STRLPBF irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2
IRL1404STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+282.07 грн
10+177.90 грн
100+124.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL2910STRLPBF irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d
IRL2910STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 4005 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+205.35 грн
10+127.90 грн
100+88.10 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL530NSTRLPBF irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
IRL530NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 12838 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+130.96 грн
10+80.22 грн
100+53.90 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRL540NSTRLPBF irl540nspbf.pdf?fileId=5546d462533600a40153565fcbaa2569
IRL540NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 19646 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+159.63 грн
10+98.50 грн
100+66.86 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLZ44NSTRLPBF irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727
IRLZ44NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 7652 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+142.58 грн
10+87.83 грн
100+59.47 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BCR401WE6327HTSA1 bcr401w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407b0f84a0188
BCR401WE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT343-3D
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 18V
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT343-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Operating Temperature: 150°C (TJ)
Type: Linear
товару немає в наявності
В кошику  од. на суму  грн.
BCR402WE6327HTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT343-3D
Qualification: AEC-Q101
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT343-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 18V
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BSC016N03MSGATMA1 Infineon-BSC016N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4a19bb0334
BSC016N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC020N03MSGATMA1 Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e
BSC020N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
товару немає в наявності
В кошику  од. на суму  грн.
BSC025N03LS G download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1
BSC025N03LS G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC025N03MSGATMA1 Infineon-BSC025N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de52b02d034c
BSC025N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BSC030N03MSGATMA1 Infineon-BSC030N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de605dea0359
BSC030N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+22.11 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC042N03LSGATMA1 dgdl?fileId=db3a304319c6f18c0119e17c202f5ff7
BSC042N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+18.07 грн
10000+16.14 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC042N03MSGATMA1 Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366
BSC042N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC050N03LSGATMA1 Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b
BSC050N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+16.84 грн
10000+15.02 грн
15000+14.42 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC050N03MSGATMA1 BSC050N03MSG.pdf
BSC050N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC057N03LSGATMA1 Infineon-BSC057N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4274af23bf7
BSC057N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+23.75 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC057N03MSGATMA1 Infineon-BSC057N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de68c6ce037a
BSC057N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/71A TDSON
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC080N03LSGATMA1 Infineon-BSC080N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b427c2683cbe
BSC080N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/53A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC080N03MSGATMA1 Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383
BSC080N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC090N03LSGATMA1 Infineon-BSC090N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276e193c2f
BSC090N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/48A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC090N03MSGATMA1 Infineon-BSC090N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de715bb50390
BSC090N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/48A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03LSGATMA1 BSC100N03LS_G.pdf
BSC100N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC100N03MSGATMA1 Infineon-BSC100N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de73c33c039c
BSC100N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 Infineon-BSC120N03LS-DS-v02_01-en.pdf?fileId=db3a3043183a955501189caf1e5e4010
BSC120N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 4900 шт
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 Infineon-BSC120N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de761b1d03a5
BSC120N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A/39A TDSON
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+13.18 грн
10000+11.74 грн
15000+11.25 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ035N03LSGATMA1 BSZ035N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cefe327502e4
BSZ035N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/40A 8TSDSON
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ035N03MSGATMA1 BSZ035N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddeb998f02e7
BSZ035N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+22.79 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ050N03LSGATMA1 BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee
BSZ050N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+21.45 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ050N03MSGATMA1 infineon-bsz050n03ms-g-datasheet-en.pdf
BSZ050N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ058N03LSGATMA1 BSZ058N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3fa0a7e03f2
BSZ058N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ058N03MSGATMA1 BSZ058N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddee2ce902ed
BSZ058N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03LSGATMA1 BSZ088N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cf18620d02eb
BSZ088N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ088N03MSGATMA1 BSZ088N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddf12fe902f6
BSZ088N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03LSGATMA1 fundamentals-of-power-semiconductors
BSZ100N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316
BSZ100N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ130N03LSGATMA1 BSZ130N03LS_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4035f8203fc
BSZ130N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A/35A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+13.80 грн
10000+12.29 грн
15000+11.78 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de3b1fda0321
BSZ130N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9A/35A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
ESD1P0RFSE6327HTSA1 esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7
ESD1P0RFSE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 70VWM 15VC SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD1P0RFWE6327HTSA1 esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7
ESD1P0RFWE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
24VS2BE6327XT Part_Number_Guide_Web.pdf
24VS2BE6327XT
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 41VC SOT23-3
товару немає в наявності
В кошику  од. на суму  грн.
ESD24VS2UE6327HTSA1 Infineon-ESD24VS2U-DS-v01_01-en.pdf?fileId=db3a3043340fff53013413a2249d2ff3
ESD24VS2UE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 41VC PGSOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-SOT23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESD5V0S4USE6327HTSA1 esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04
ESD5V0S4USE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 13VC SOT3636
товару немає в наявності
В кошику  од. на суму  грн.
IPD031N03LGATMA1 IP%28D%2CS%29031N03L_%20G.pdf
IPD031N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+39.91 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD050N03LGATMA1 Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f
IPD050N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+30.88 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD060N03LGATMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPD060N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+28.86 грн
5000+25.77 грн
7500+24.73 грн
12500+22.12 грн
17500+21.48 грн
25000+21.27 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD075N03LGATMA1 infineon-ipd075n03lg-datasheet-en.pdf
IPD075N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+18.17 грн
5000+16.12 грн
7500+15.42 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD090N03LGATMA1 Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181
IPD090N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+23.05 грн
5000+20.49 грн
7500+19.63 грн
12500+17.51 грн
17500+16.97 грн
25000+16.45 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD105N03LGATMA1 IP%28D%2CF%2CS%2CU%29105N03L%20G_Rev2010.pdf
IPD105N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
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IPD135N03LGXT IP%28D%2CF%2CS%2CU%29135N03L_G.pdf
IPD135N03LGXT
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPP04CN10NG IP%28B%2CI%2CP%2904CN10N%20G.pdf
IPP04CN10NG
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP50R299CPXKSA1 Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc
IPP50R299CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
товару немає в наявності
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IPP50R350CPXKSA1 Infineon-IPP50R350CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01238540e43d66ad
IPP50R350CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
товару немає в наявності
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ESD8V0R1B02LRHE6327XTSA1 ESD8V0R1B_Rev09.pdf
ESD8V0R1B02LRHE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ESD8V0R1B02LSE6327XTSA1 ESD8V0R1B_Rev09.pdf
ESD8V0R1B02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
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