Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149775) > Сторінка 101 з 2497

Обрати Сторінку:   [  << Попередня Сторінка ]  1 96 97 98 99 100 101 102 103 104 105 106 249 498 747 996 1245 1494 1743 1992 2241 2490 2497  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
CY8C21534-24PVXA CY8C21534-24PVXA Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C21534-24PVXAT CY8C21534-24PVXAT Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C24423A-24PVXA CY8C24423A-24PVXA Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C24423A-24PVXAT CY8C24423A-24PVXAT Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29466-12PVXET CY8C29466-12PVXET Infineon Technologies Infineon-CY8C29466_CY8C29666_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec676923cae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Description: IC MCU 8BIT 32KB FLASH 28SSOP
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29466-24PVXA CY8C29466-24PVXA Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29466-24PVXAT CY8C29466-24PVXAT Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
TLE4925 TLE4925 Infineon Technologies TLE4925(C)_DS.pdf Description: IC HALL EFFECT SENSOR SSO-3-6
товару немає в наявності
В кошику  од. на суму  грн.
TLE49215UHALA1 TLE49215UHALA1 Infineon Technologies Infineon-TLE4921-5U-DataSheet-v01_20-EN.pdf?fileId=5546d4627762291e01776c6b0a477adb Description: MAG SWITCH SPEC PURP SSO-4-1
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 4-SIP, SSO-4-1
Output Type: Open Collector
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Technology: Hall Effect
Sensing Range: 0mT Trip, 0mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-4-1
Test Condition: -40°C ~ 150°C
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1305 шт:
термін постачання 21-31 дні (днів)
3+126.92 грн
5+104.91 грн
10+98.80 грн
25+86.01 грн
50+81.57 грн
100+77.56 грн
500+68.69 грн
1000+65.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE4905LE6433HAXA1 TLE4905LE6433HAXA1 Infineon Technologies Infineon-TLE49X5L-DataSheet-v01_05-en.pdf?fileId=db3a304316f66ee80117549ac8b206b1 Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: 18mT Trip, 5mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Not For New Designs
на замовлення 4753 шт:
термін постачання 21-31 дні (днів)
4+84.06 грн
5+71.90 грн
10+68.33 грн
25+60.09 грн
50+57.39 грн
100+54.90 грн
500+49.10 грн
1000+47.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF1010ESTRLPBF IRF1010ESTRLPBF Infineon Technologies Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF1010NSTRLPBF IRF1010NSTRLPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)
4+94.77 грн
10+71.66 грн
100+62.60 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF1310NSTRLPBF IRF1310NSTRLPBF Infineon Technologies irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 8810 шт:
термін постачання 21-31 дні (днів)
4+84.89 грн
10+73.73 грн
100+69.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF1404STRLPBF IRF1404STRLPBF Infineon Technologies irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2 Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
на замовлення 733 шт:
термін постачання 21-31 дні (днів)
3+160.70 грн
10+116.58 грн
100+91.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF1405STRLPBF IRF1405STRLPBF Infineon Technologies IRF1405%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
2+178.84 грн
10+104.84 грн
100+91.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF2807STRLPBF IRF2807STRLPBF Infineon Technologies irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4 Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
2+185.43 грн
10+114.99 грн
100+78.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF3415STRLPBF IRF3415STRLPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1024 шт:
термін постачання 21-31 дні (днів)
2+196.97 грн
10+129.12 грн
100+94.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF3515STRLPBF IRF3515STRLPBF Infineon Technologies irf3515spbf.pdf Description: MOSFET N-CH 150V 41A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3710STRLPBF IRF3710STRLPBF Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 7237 шт:
термін постачання 21-31 дні (днів)
2+169.77 грн
10+108.25 грн
100+79.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF5305STRLPBF IRF5305STRLPBF Infineon Technologies irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 description Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 4285 шт:
термін постачання 21-31 дні (днів)
3+150.82 грн
10+93.57 грн
100+65.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF530NSTRLPBF IRF530NSTRLPBF Infineon Technologies irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c description Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 4353 шт:
термін постачання 21-31 дні (днів)
4+98.07 грн
10+61.42 грн
100+49.41 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF540NSTRLPBF IRF540NSTRLPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 1897 шт:
термін постачання 21-31 дні (днів)
3+131.04 грн
10+81.90 грн
100+51.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF630NSTRLPBF IRF630NSTRLPBF Infineon Technologies irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6 Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF640NSTRLPBF IRF640NSTRLPBF Infineon Technologies irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 8091 шт:
термін постачання 21-31 дні (днів)
3+117.03 грн
10+74.28 грн
100+56.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF6643TRPBF IRF6643TRPBF Infineon Technologies irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b Description: MOSFET N-CH 150V 6.2A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
на замовлення 707 шт:
термін постачання 21-31 дні (днів)
2+192.85 грн
10+120.55 грн
100+83.06 грн
500+62.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF7326D2TRPBF IRF7326D2TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 30V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 2090 шт:
термін постачання 21-31 дні (днів)
7+47.80 грн
10+35.55 грн
100+29.74 грн
500+25.67 грн
1000+24.97 грн
2000+24.39 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF7416TRPBF IRF7416TRPBF Infineon Technologies infineon-irf7416-datasheet-en.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 17551 шт:
термін постачання 21-31 дні (днів)
4+103.84 грн
10+60.16 грн
100+43.20 грн
500+31.80 грн
1000+28.99 грн
2000+27.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7501TRPBF IRF7501TRPBF Infineon Technologies irf7501pbf.pdf?fileId=5546d462533600a401535603017a1c50 Description: MOSFET 2N-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRF7503TRPBF IRF7503TRPBF Infineon Technologies irf7503pbf.pdf?fileId=5546d462533600a40153560310241c54 Description: MOSFET 2N-CH 30V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
на замовлення 792 шт:
термін постачання 21-31 дні (днів)
5+79.94 грн
10+47.85 грн
100+30.13 грн
500+22.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF7509TRPBF IRF7509TRPBF Infineon Technologies irf7509pbf.pdf?fileId=5546d462533600a40153560330a81c5c Description: MOSFET N/P-CH 30V 2.7A/2A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
на замовлення 5063 шт:
термін постачання 21-31 дні (днів)
4+87.36 грн
10+53.17 грн
100+35.03 грн
500+25.54 грн
1000+23.18 грн
2000+21.19 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7530TRPBF IRF7530TRPBF Infineon Technologies irf7530pbf.pdf?fileId=5546d462533600a4015356036f371c6c Description: MOSFET 2N-CH 20V 5.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
на замовлення 1340 шт:
термін постачання 21-31 дні (днів)
4+103.84 грн
10+63.09 грн
100+41.85 грн
500+30.70 грн
1000+27.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7606TRPBF IRF7606TRPBF Infineon Technologies irf7606pbf.pdf?fileId=5546d462533600a401535603bc101c80 Description: MOSFET P-CH 30V 3.6A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
на замовлення 7052 шт:
термін постачання 21-31 дні (днів)
4+91.48 грн
10+53.41 грн
100+36.97 грн
500+26.93 грн
1000+24.16 грн
2000+22.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7663TRPBF IRF7663TRPBF Infineon Technologies irf7663pbf.pdf Description: MOSFET P-CH 20V 8.2A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7726TRPBF IRF7726TRPBF Infineon Technologies irf7726pbf.pdf?fileId=5546d462533600a4015356041b6f1c98 Description: MOSFET P-CH 30V 7A MICRO8
на замовлення 3249 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRF9Z34NSTRLPBF IRF9Z34NSTRLPBF Infineon Technologies irf9z34nspbf.pdf?fileId=5546d462533600a40153561228de1de0 Description: MOSFET P-CH 55V 19A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFL4105TRPBF IRFL4105TRPBF Infineon Technologies irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8 Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 4387 шт:
термін постачання 21-31 дні (днів)
7+50.27 грн
10+33.57 грн
100+25.87 грн
500+22.42 грн
1000+20.31 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRFL4310TRPBF IRFL4310TRPBF Infineon Technologies irfl4310pbf.pdf?fileId=5546d462533600a40153562804ba1fbc Description: MOSFET N-CH 100V 1.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 11462 шт:
термін постачання 21-31 дні (днів)
5+66.75 грн
10+36.74 грн
100+26.55 грн
500+19.17 грн
1000+17.32 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFZ44NSTRLPBF IRFZ44NSTRLPBF Infineon Technologies infineon-irfz44ns-datasheet-en.pdf Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 8927 шт:
термін постачання 21-31 дні (днів)
3+134.33 грн
10+90.87 грн
100+61.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFZ46NSTRLPBF IRFZ46NSTRLPBF Infineon Technologies infineon-irfz46ns-datasheet-en.pdf Description: MOSFET N-CH 55V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFZ48NSTRLPBF IRFZ48NSTRLPBF Infineon Technologies irfz48nspbf.pdf?fileId=5546d462533600a40153563eb276222e Description: MOSFET N-CH 55V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 25 V
на замовлення 25299 шт:
термін постачання 21-31 дні (днів)
3+124.44 грн
10+77.69 грн
100+64.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL1404STRLPBF IRL1404STRLPBF Infineon Technologies irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
2+266.19 грн
10+168.09 грн
100+117.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRL2910STRLPBF IRL2910STRLPBF Infineon Technologies irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 6606 шт:
термін постачання 21-31 дні (днів)
2+262.90 грн
10+186.66 грн
100+141.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRL530NSTRLPBF IRL530NSTRLPBF Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 24665 шт:
термін постачання 21-31 дні (днів)
3+122.80 грн
10+79.20 грн
100+55.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL540NSTRLPBF IRL540NSTRLPBF Infineon Technologies irl540nspbf.pdf?fileId=5546d462533600a40153565fcbaa2569 Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 28694 шт:
термін постачання 21-31 дні (днів)
3+146.69 грн
10+112.45 грн
100+79.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRLZ24NSTRLPBF IRLZ24NSTRLPBF Infineon Technologies irlz24nspbf.pdf Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLZ44NSTRLPBF IRLZ44NSTRLPBF Infineon Technologies irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727 Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 4911 шт:
термін постачання 21-31 дні (днів)
4+101.37 грн
10+74.20 грн
100+55.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCR401WE6327HTSA1 BCR401WE6327HTSA1 Infineon Technologies bcr401w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407b0f84a0188 Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
товару немає в наявності
В кошику  од. на суму  грн.
BCR402WE6327HTSA1 BCR402WE6327HTSA1 Infineon Technologies bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSC016N03MSGATMA1 BSC016N03MSGATMA1 Infineon Technologies Infineon-BSC016N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4a19bb0334 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC020N03MSGATMA1 BSC020N03MSGATMA1 Infineon Technologies Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+35.93 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC025N03LS G BSC025N03LS G Infineon Technologies download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1 Description: MOSFET N-CH 30V 100A TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
BSC025N03MSGATMA1 BSC025N03MSGATMA1 Infineon Technologies Infineon-BSC025N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de52b02d034c Description: MOSFET N-CH 30V 100A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC030N03MSGATMA1 BSC030N03MSGATMA1 Infineon Technologies Infineon-BSC030N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de605dea0359 Description: MOSFET N-CH 30V 21A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.78 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC042N03LSGATMA1 BSC042N03LSGATMA1 Infineon Technologies dgdl?fileId=db3a304319c6f18c0119e17c202f5ff7 Description: MOSFET N-CH 30V 20A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+26.50 грн
10000+24.51 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Infineon Technologies Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366 Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+16.41 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC050N03MSGATMA1 BSC050N03MSGATMA1 Infineon Technologies BSC050N03MSG.pdf Description: MOSFET N-CH 30V 16A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC057N03LSGATMA1 BSC057N03LSGATMA1 Infineon Technologies Infineon-BSC057N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4274af23bf7 Description: MOSFET N-CH 30V 17A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+25.26 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC057N03MSGATMA1 BSC057N03MSGATMA1 Infineon Technologies Infineon-BSC057N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de68c6ce037a Description: MOSFET N-CH 30V 15A/71A TDSON
товару немає в наявності
В кошику  од. на суму  грн.
BSC080N03LSGATMA1 BSC080N03LSGATMA1 Infineon Technologies Infineon-BSC080N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b427c2683cbe Description: MOSFET N-CH 30V 14A/53A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
CY8C21534-24PVXA
CY8C21534-24PVXA
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C21534-24PVXAT download
CY8C21534-24PVXAT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C24423A-24PVXA Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24PVXA
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C24423A-24PVXAT Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24PVXAT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29466-12PVXET Infineon-CY8C29466_CY8C29666_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec676923cae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
CY8C29466-12PVXET
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SSOP
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29466-24PVXA download
CY8C29466-24PVXA
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29466-24PVXAT download
CY8C29466-24PVXAT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
В кошику  од. на суму  грн.
TLE4925 TLE4925(C)_DS.pdf
TLE4925
Виробник: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSO-3-6
товару немає в наявності
В кошику  од. на суму  грн.
TLE49215UHALA1 Infineon-TLE4921-5U-DataSheet-v01_20-EN.pdf?fileId=5546d4627762291e01776c6b0a477adb
TLE49215UHALA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-4-1
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 4-SIP, SSO-4-1
Output Type: Open Collector
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Technology: Hall Effect
Sensing Range: 0mT Trip, 0mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-4-1
Test Condition: -40°C ~ 150°C
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1305 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.92 грн
5+104.91 грн
10+98.80 грн
25+86.01 грн
50+81.57 грн
100+77.56 грн
500+68.69 грн
1000+65.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE4905LE6433HAXA1 Infineon-TLE49X5L-DataSheet-v01_05-en.pdf?fileId=db3a304316f66ee80117549ac8b206b1
TLE4905LE6433HAXA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: 18mT Trip, 5mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Not For New Designs
на замовлення 4753 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.06 грн
5+71.90 грн
10+68.33 грн
25+60.09 грн
50+57.39 грн
100+54.90 грн
500+49.10 грн
1000+47.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF1010NSTRLPBF Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.77 грн
10+71.66 грн
100+62.60 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
IRF1310NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 8810 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.89 грн
10+73.73 грн
100+69.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF1404STRLPBF irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2
IRF1404STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
на замовлення 733 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.70 грн
10+116.58 грн
100+91.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF1405STRLPBF IRF1405%28S%2CL%29PbF.pdf
IRF1405STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.84 грн
10+104.84 грн
100+91.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF2807STRLPBF irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4
IRF2807STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.43 грн
10+114.99 грн
100+78.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF3415STRLPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1024 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.97 грн
10+129.12 грн
100+94.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF3515STRLPBF irf3515spbf.pdf
IRF3515STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 41A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3710STRLPBF irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949
IRF3710STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 7237 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+169.77 грн
10+108.25 грн
100+79.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF5305STRLPBF description irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305STRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 4285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.82 грн
10+93.57 грн
100+65.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF530NSTRLPBF description irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c
IRF530NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 4353 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.07 грн
10+61.42 грн
100+49.41 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF540NSTRLPBF irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 1897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.04 грн
10+81.90 грн
100+51.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF630NSTRLPBF irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF640NSTRLPBF irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee
IRF640NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 8091 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.03 грн
10+74.28 грн
100+56.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF6643TRPBF irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b
IRF6643TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 6.2A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
на замовлення 707 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+192.85 грн
10+120.55 грн
100+83.06 грн
500+62.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF7326D2TRPBF IR_PartNumberingSystem.pdf
IRF7326D2TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 2090 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.80 грн
10+35.55 грн
100+29.74 грн
500+25.67 грн
1000+24.97 грн
2000+24.39 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF7416TRPBF infineon-irf7416-datasheet-en.pdf
IRF7416TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 17551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.84 грн
10+60.16 грн
100+43.20 грн
500+31.80 грн
1000+28.99 грн
2000+27.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7501TRPBF irf7501pbf.pdf?fileId=5546d462533600a401535603017a1c50
IRF7501TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRF7503TRPBF irf7503pbf.pdf?fileId=5546d462533600a40153560310241c54
IRF7503TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
на замовлення 792 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+79.94 грн
10+47.85 грн
100+30.13 грн
500+22.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF7509TRPBF irf7509pbf.pdf?fileId=5546d462533600a40153560330a81c5c
IRF7509TRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.7A/2A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
на замовлення 5063 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.36 грн
10+53.17 грн
100+35.03 грн
500+25.54 грн
1000+23.18 грн
2000+21.19 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7530TRPBF irf7530pbf.pdf?fileId=5546d462533600a4015356036f371c6c
IRF7530TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 5.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
на замовлення 1340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.84 грн
10+63.09 грн
100+41.85 грн
500+30.70 грн
1000+27.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7606TRPBF irf7606pbf.pdf?fileId=5546d462533600a401535603bc101c80
IRF7606TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
на замовлення 7052 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.48 грн
10+53.41 грн
100+36.97 грн
500+26.93 грн
1000+24.16 грн
2000+22.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7663TRPBF irf7663pbf.pdf
IRF7663TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 8.2A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7726TRPBF irf7726pbf.pdf?fileId=5546d462533600a4015356041b6f1c98
IRF7726TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 7A MICRO8
на замовлення 3249 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRF9Z34NSTRLPBF irf9z34nspbf.pdf?fileId=5546d462533600a40153561228de1de0
IRF9Z34NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 19A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFL4105TRPBF irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8
IRFL4105TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 4387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.27 грн
10+33.57 грн
100+25.87 грн
500+22.42 грн
1000+20.31 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRFL4310TRPBF irfl4310pbf.pdf?fileId=5546d462533600a40153562804ba1fbc
IRFL4310TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 11462 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.75 грн
10+36.74 грн
100+26.55 грн
500+19.17 грн
1000+17.32 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFZ44NSTRLPBF infineon-irfz44ns-datasheet-en.pdf
IRFZ44NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 8927 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.33 грн
10+90.87 грн
100+61.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFZ46NSTRLPBF infineon-irfz46ns-datasheet-en.pdf
IRFZ46NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFZ48NSTRLPBF irfz48nspbf.pdf?fileId=5546d462533600a40153563eb276222e
IRFZ48NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 25 V
на замовлення 25299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.44 грн
10+77.69 грн
100+64.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL1404STRLPBF irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2
IRL1404STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+266.19 грн
10+168.09 грн
100+117.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRL2910STRLPBF irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d
IRL2910STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 6606 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+262.90 грн
10+186.66 грн
100+141.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRL530NSTRLPBF irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
IRL530NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 24665 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.80 грн
10+79.20 грн
100+55.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL540NSTRLPBF irl540nspbf.pdf?fileId=5546d462533600a40153565fcbaa2569
IRL540NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 28694 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.69 грн
10+112.45 грн
100+79.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRLZ24NSTRLPBF irlz24nspbf.pdf
IRLZ24NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLZ44NSTRLPBF irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727
IRLZ44NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 4911 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.37 грн
10+74.20 грн
100+55.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCR401WE6327HTSA1 bcr401w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407b0f84a0188
BCR401WE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
товару немає в наявності
В кошику  од. на суму  грн.
BCR402WE6327HTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSC016N03MSGATMA1 Infineon-BSC016N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4a19bb0334
BSC016N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC020N03MSGATMA1 Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e
BSC020N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+35.93 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC025N03LS G download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1
BSC025N03LS G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
BSC025N03MSGATMA1 Infineon-BSC025N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de52b02d034c
BSC025N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC030N03MSGATMA1 Infineon-BSC030N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de605dea0359
BSC030N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+24.78 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC042N03LSGATMA1 dgdl?fileId=db3a304319c6f18c0119e17c202f5ff7
BSC042N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+26.50 грн
10000+24.51 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC042N03MSGATMA1 Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366
BSC042N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC050N03LSGATMA1 Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b
BSC050N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+16.41 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC050N03MSGATMA1 BSC050N03MSG.pdf
BSC050N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC057N03LSGATMA1 Infineon-BSC057N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4274af23bf7
BSC057N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+25.26 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC057N03MSGATMA1 Infineon-BSC057N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de68c6ce037a
BSC057N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/71A TDSON
товару немає в наявності
В кошику  од. на суму  грн.
BSC080N03LSGATMA1 Infineon-BSC080N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b427c2683cbe
BSC080N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/53A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 96 97 98 99 100 101 102 103 104 105 106 249 498 747 996 1245 1494 1743 1992 2241 2490 2497  [ Наступна Сторінка >> ]