Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149366) > Сторінка 2481 з 2490
Фото | Назва | Виробник | Інформація |
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IRF135B203 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Case: TO220AB Kind of channel: enhancement Mounting: THT Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.27µC On-state resistance: 8.4mΩ Gate-source voltage: ±20V Drain-source voltage: 135V Power dissipation: 441W Drain current: 91A Pulsed drain current: 512A Kind of package: tube |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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S6E2CCAL0AGL2000A | INFINEON TECHNOLOGIES |
![]() Description: S6E2CCAL0AGL2000A |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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ISG0616N10NM5HSCATMA1 | INFINEON TECHNOLOGIES |
![]() Description: ISG0616N10NM5HSCATMA1 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SPB20N60S5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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IRF100P219AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 316A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
ISZ080N10NM6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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BAS4006E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Case: SOT23 Type of diode: Schottky switching Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Semiconductor structure: common anode; double Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS4005WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW Case: SOT323 Type of diode: Schottky switching Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Semiconductor structure: common cathode; double Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS4006WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW Case: SOT323 Type of diode: Schottky switching Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Semiconductor structure: common anode; double Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
BAS4002LE6327XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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BAS4005E6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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BAS4006E6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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IPP90R340C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: THT Kind of channel: enhancement Polarisation: unipolar Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IPP90R340C3XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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IPP90R800C3XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 900V; 6.9A; 104W; TO220-3 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 900V Drain current: 6.9A Power dissipation: 104W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 42nC Kind of channel: enhancement |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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XMC4104F64K64ABXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Case: PG-LQFP-64 Supply voltage: 3.3V DC Number of A/D channels: 9 Number of inputs/outputs: 35 Kind of core: 32-bit Memory: 20kB SRAM; 64kB FLASH Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4100 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4104F64K128ABXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Case: PG-LQFP-64 Supply voltage: 3.3V DC Number of A/D channels: 9 Number of inputs/outputs: 35 Kind of core: 32-bit Memory: 20kB SRAM; 128kB FLASH Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4100 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4500F100K1024ACXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH Memory: 160kB SRAM; 1MB FLASH Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LQFP-100 Family: XMC4500 Operating temperature: -40...125°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Type of integrated circuit: ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4500E144F1024ACXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH Memory: 160kB SRAM; 1MB FLASH Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LFBGA-144 Family: XMC4500 Operating temperature: -40...85°C Supply voltage: 3.3V DC Number of A/D channels: 26 Number of 16bit timers: 26 Number of inputs/outputs: 91 Type of integrated circuit: ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4500E144X1024ACXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH Memory: 160kB SRAM; 1MB FLASH Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LFBGA-144 Family: XMC4500 Operating temperature: -40...105°C Supply voltage: 3.3V DC Number of A/D channels: 26 Number of 16bit timers: 26 Number of inputs/outputs: 91 Type of integrated circuit: ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
PSC3M5FDS2ACQ1AQSA1 | INFINEON TECHNOLOGIES |
Category: ST microcontrollers Description: PSC3M5FDS2ACQ1AQSA1 |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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CY7C4022KV13-933FCXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C4042KV13-933FCXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C4122KV13-933FCXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 8Mx18bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C4142KV13-933FCXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 4Mx36bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C4142KV13-933FCXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 4Mx36bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IAUS300N10S5N014ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 1315A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 216nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TLF50251EL | INFINEON TECHNOLOGIES |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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TLF50201EL | INFINEON TECHNOLOGIES |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
2EDL05N06PJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2 Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Voltage class: 600V Type of integrated circuit: driver Technology: EiceDRIVER™ Kind of integrated circuit: high-/low-side; MOSFET gate driver Integrated circuit features: integrated bootstrap functionality Topology: MOSFET half-bridge Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ On-state resistance: 16.5mΩ Power dissipation: 78W Gate-source voltage: ±20V Drain current: 45A Drain-source voltage: 150V Polarisation: unipolar Case: CanPAK™ MZ; MG-WDSON-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IGCM06F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A Case: PG-MDIP24 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Output current: -6...6A Operating voltage: 13.5...18.5/0...400V DC Power dissipation: 23.6W Voltage class: 600V Frequency: 20kHz Kind of integrated circuit: 3-phase motor controller; IPM Protection: anti-overload OPP; undervoltage UVP Technology: ClPOS™ Mini; TRENCHSTOP™ Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Integrated circuit features: integrated bootstrap functionality |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: SMD Polarisation: unipolar On-state resistance: 1.6mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
S25FS512SDSBHB213 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24 Application: automotive Case: BGA24 Type of integrated circuit: FLASH memory Mounting: SMD Interface: QUAD SPI Kind of memory: NOR Kind of package: reel; tape Kind of interface: serial Operating temperature: -40...105°C Operating voltage: 1.7...2V Operating frequency: 80MHz Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRFR5505TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: DPAK On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 2191 шт: термін постачання 21-30 дні (днів) |
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BFP650H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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BCR148WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70; SOT323 Current gain: 70 Mounting: SMD Frequency: 100MHz Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BTN8962TAAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: IMC; motor controller Technology: NovalithIC™ Case: PG-TO263-7 Output current: -27...30A Number of channels: 1 Mounting: SMD On-state resistance: 14.2mΩ Operating temperature: -40...150°C Operating voltage: 5.5...40V DC Kind of package: reel; tape |
на замовлення 944 шт: термін постачання 21-30 дні (днів) |
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BCR08PNH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 170MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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BCR08PNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363 Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC88; SOT363 Current gain: 70 Mounting: SMD Frequency: 170MHz Semiconductor structure: double Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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TLD21321EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 240mA Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: high-side; LED driver Integrated circuit features: linear dimming; PWM Technology: Litix™ Protection: overheating OTP Case: PG-SSOP-14-EP Output current: 240mA Number of channels: 1 Operating voltage: 5.5...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLD21313EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: high-side; LED driver Integrated circuit features: linear dimming; PWM Technology: Litix™ Protection: overheating OTP Case: PG-SSOP-14-EP Output current: 80mA Number of channels: 3 Operating voltage: 5.5...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPA028N04NM3SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP Mounting: THT Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Kind of package: tube Case: TO220FP Polarisation: unipolar On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 38W Drain-source voltage: 40V Drain current: 63A Pulsed drain current: 356A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPA028N08N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Mounting: THT Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Kind of package: tube Case: TO220FP Polarisation: unipolar Gate charge: 155nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 42W Drain-source voltage: 80V Drain current: 62A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FP20R06W1E3B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 20A Case: AG-EASY1B-2 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Power dissipation: 94W Technology: EasyPIM™ 1B Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Pulsed drain current: 150A Gate-source voltage: -7...23V Drain current: 45A On-state resistance: 57mΩ Power dissipation: 114W Polarisation: unipolar |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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BCR602XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1 Protection: overheating OTP Mounting: SMD Integrated circuit features: linear dimming; PWM Case: PG-SOT23-6 Output current: 10mA Number of channels: 1 Operating voltage: 8...60V DC Kind of integrated circuit: current regulator; LED driver Type of integrated circuit: driver |
на замовлення 1566 шт: термін постачання 21-30 дні (днів) |
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BTS3035EJ | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP Kind of integrated circuit: low-side Case: SO8-EP Type of integrated circuit: power switch Mounting: SMD Technology: HITFET® Kind of output: N-Channel Operating temperature: -40...150°C Turn-on time: 115µs Turn-off time: 210µs On-state resistance: 70mΩ Number of channels: 1 Output current: 5A Output voltage: 40V |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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BTS3035TF | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3 Kind of integrated circuit: low-side Case: PG-TO252-3 Type of integrated circuit: power switch Mounting: SMD Technology: HITFET® Kind of output: N-Channel Operating temperature: -40...150°C Turn-on time: 115µs Turn-off time: 210µs On-state resistance: 70mΩ Number of channels: 1 Output current: 5A Output voltage: 40V |
на замовлення 1139 шт: термін постачання 21-30 дні (днів) |
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IPC90N04S5L-3R3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 Gate charge: 40nC Drain current: 90A Power dissipation: 62W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPC90N04S5-3R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 Gate charge: 32.6nC Drain current: 90A Power dissipation: 63W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IPD90N04S403ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 40V; 90A; 94W; DPAK,TO252; SMT Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 40V Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Technology: MOSFET Electrical mounting: SMT Drain current: 90A Power dissipation: 94W Application: automotive industry |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPB90N04S402ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB; SMT Type of transistor: N-MOSFET Drain-source voltage: 40V Case: D2PAK; TO263AB Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Technology: MOSFET Electrical mounting: SMT Gate charge: 118nC Drain current: 90A Power dissipation: 150W Application: automotive industry |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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SPD07N60C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 600V; 7.3A; 83W; DPAK; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 83W Case: DPAK Gate-source voltage: 20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Electrical mounting: SMT Gate charge: 21nC |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T Pulsed drain current: 140A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IRFU024NPBFAKLA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 55V; 17A; 45W; IPAK Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 55V Drain current: 17A Power dissipation: 45W Case: IPAK Gate-source voltage: 20V Mounting: THT Gate charge: 20nC |
на замовлення 695 шт: термін постачання 21-30 дні (днів) |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 18.7nC On-state resistance: 0.5Ω Drain current: 4.8A Gate-source voltage: ±20V Pulsed drain current: 24A Drain-source voltage: 500V Power dissipation: 57W Technology: CoolMOS™ CE Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SPP15P10PLHXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 128W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: SIPMOS™ |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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S25FL064LABBHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
S25FL064LABBHI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
IRF135B203 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 208.04 грн |
9+ | 110.05 грн |
24+ | 103.71 грн |
S6E2CCAL0AGL2000A |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: S6E2CCAL0AGL2000A
Category: Integrated circuits - Unclassified
Description: S6E2CCAL0AGL2000A
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 1527.89 грн |
ISG0616N10NM5HSCATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: ISG0616N10NM5HSCATMA1
Category: Transistors - Unclassified
Description: ISG0616N10NM5HSCATMA1
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 231.91 грн |
SPB20N60S5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 190.13 грн |
IRF100P219AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
ISZ080N10NM6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 65.65 грн |
BAS4006E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
BAS4005WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
BAS4006WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
BAS4002LE6327XTMA1 |
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на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15000+ | 5.29 грн |
BAS4005E6433HTMA1 |
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на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.40 грн |
BAS4006E6433HTMA1 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.15 грн |
IPP90R340C3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
IPP90R340C3XKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 795 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 226.80 грн |
150+ | 189.22 грн |
IPP90R800C3XKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 6.9A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 42nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 6.9A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 42nC
Kind of channel: enhancement
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 95.49 грн |
XMC4104F64K64ABXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
XMC4104F64K128ABXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
XMC4500F100K1024ACXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Type of integrated circuit: ARM microcontroller
товару немає в наявності
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од. на суму грн.
XMC4500E144F1024ACXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
товару немає в наявності
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од. на суму грн.
XMC4500E144X1024ACXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
товару немає в наявності
В кошику
од. на суму грн.
PSC3M5FDS2ACQ1AQSA1 |
на замовлення 960 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
160+ | 426.31 грн |
CY7C4022KV13-933FCXI |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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CY7C4042KV13-933FCXC |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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CY7C4122KV13-933FCXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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CY7C4142KV13-933FCXC |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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CY7C4142KV13-933FCXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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IAUS300N10S5N014ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhancement
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TLF50251EL |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 213.15 грн |
TLF50201EL |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
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2EDL05N06PJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Integrated circuit features: integrated bootstrap functionality
Topology: MOSFET half-bridge
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Integrated circuit features: integrated bootstrap functionality
Topology: MOSFET half-bridge
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
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BSB165N15NZ3GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
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IGCM06F60GAXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -6...6A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 23.6W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -6...6A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 23.6W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
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IPB016N06L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
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S25FS512SDSBHB213 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Application: automotive
Case: BGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Interface: QUAD SPI
Kind of memory: NOR
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Operating frequency: 80MHz
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Application: automotive
Case: BGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Interface: QUAD SPI
Kind of memory: NOR
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Operating frequency: 80MHz
Memory: 512Mb FLASH
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IRFR5505TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.85 грн |
10+ | 59.30 грн |
25+ | 50.51 грн |
42+ | 22.64 грн |
114+ | 21.38 грн |
BFP650H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.22 грн |
BCR148WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 70
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 70
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.24 грн |
BTN8962TAAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
на замовлення 944 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 347.87 грн |
4+ | 253.35 грн |
10+ | 247.02 грн |
11+ | 239.10 грн |
25+ | 231.97 грн |
50+ | 229.60 грн |
BCR08PNH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 12.62 грн |
40+ | 10.45 грн |
100+ | 9.26 грн |
115+ | 8.08 грн |
315+ | 7.68 грн |
BCR08PNH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.03 грн |
TLD21321EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 240mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 240mA
Number of channels: 1
Operating voltage: 5.5...40V DC
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 240mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 240mA
Number of channels: 1
Operating voltage: 5.5...40V DC
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TLD21313EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Operating voltage: 5.5...40V DC
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Operating voltage: 5.5...40V DC
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IPA028N04NM3SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 38W
Drain-source voltage: 40V
Drain current: 63A
Pulsed drain current: 356A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 38W
Drain-source voltage: 40V
Drain current: 63A
Pulsed drain current: 356A
Kind of channel: enhancement
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IPA028N08N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
Gate charge: 155nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Drain-source voltage: 80V
Drain current: 62A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
Gate charge: 155nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Drain-source voltage: 80V
Drain current: 62A
Kind of channel: enhancement
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FP20R06W1E3B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 20A
Case: AG-EASY1B-2
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 20A
Case: AG-EASY1B-2
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
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IMZ120R030M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1605.48 грн |
BCR602XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Operating voltage: 8...60V DC
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Operating voltage: 8...60V DC
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
на замовлення 1566 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
35+ | 27.24 грн |
94+ | 25.73 грн |
BTS3035EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Kind of integrated circuit: low-side
Case: SO8-EP
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Kind of integrated circuit: low-side
Case: SO8-EP
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 110.84 грн |
5+ | 92.63 грн |
18+ | 53.04 грн |
48+ | 50.67 грн |
BTS3035TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Kind of integrated circuit: low-side
Case: PG-TO252-3
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Kind of integrated circuit: low-side
Case: PG-TO252-3
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
на замовлення 1139 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 102.92 грн |
10+ | 96.59 грн |
15+ | 64.13 грн |
40+ | 60.17 грн |
1000+ | 57.80 грн |
IPC90N04S5L-3R3 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 40nC
Drain current: 90A
Power dissipation: 62W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 40nC
Drain current: 90A
Power dissipation: 62W
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IPC90N04S5-3R6 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Drain current: 90A
Power dissipation: 63W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Drain current: 90A
Power dissipation: 63W
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IPD90N04S403ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; 94W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Drain current: 90A
Power dissipation: 94W
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; 94W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Drain current: 90A
Power dissipation: 94W
Application: automotive industry
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 40.93 грн |
IPB90N04S402ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 118nC
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 118nC
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 83.56 грн |
SPD07N60C3ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 7.3A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 21nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 7.3A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 21nC
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 51.16 грн |
IPD35N10S3L26ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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IRFU024NPBFAKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 17A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: 20V
Mounting: THT
Gate charge: 20nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 17A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: 20V
Mounting: THT
Gate charge: 20nC
на замовлення 695 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 18.59 грн |
IPD50R500CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18.7nC
On-state resistance: 0.5Ω
Drain current: 4.8A
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 500V
Power dissipation: 57W
Technology: CoolMOS™ CE
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18.7nC
On-state resistance: 0.5Ω
Drain current: 4.8A
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 500V
Power dissipation: 57W
Technology: CoolMOS™ CE
Kind of channel: enhancement
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SPP15P10PLHXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 157.73 грн |
S25FL064LABBHI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL064LABBHI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.