Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149639) > Сторінка 2481 з 2494

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AIMZH120R030M1TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C06CBFEA1080E1&compId=AIMZH120R030M1T.pdf?ci_sign=97cb2fd1cfc604781222b30e784519533171ccf0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 49A; Idm: 176A; 163W
Application: automotive industry
Drain current: 49A
Power dissipation: 163W
Pulsed drain current: 176A
Case: TO247-4
Drain-source voltage: 1.2kV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Technology: CoolSiC™; SiC
On-state resistance: 60mΩ
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BCR401U BCR401U INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C047218843E8F1A6F5005056AB5A8F&compId=bcr401u.pdf?ci_sign=8c4875baf069b50202c526638961a01025db956a Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V DC
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
25+17.98 грн
Мінімальне замовлення: 20
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XMC1403Q048X0200AAXUMA1 XMC1403Q048X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC4104F64F64ABXQMA1 XMC4104F64F64ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 35
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
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XMC4108F64K64ABXQMA1 XMC4108F64K64ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4104Q48F64ABXUMA1 XMC4104Q48F64ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 21
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
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XMC4104Q48K64ABXUMA1 XMC4104Q48K64ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 21
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
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XMC4108Q48K64ABXUMA1 XMC4108Q48K64ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4504F100K512ACXQMA1 XMC4504F100K512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 128kB SRAM; 512kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4100Q48F128ABXUMA1 XMC4100Q48F128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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XMC4104Q48F128ABXUMA1 XMC4104Q48F128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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XMC4504F144F512ACXQMA1 XMC4504F144F512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
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BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 INFINEON TECHNOLOGIES BGT24LTR11.pdf Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3.2...3.4V DC
Noise Figure: 10dB
Open-loop gain: 26dB
Frequency: 24...24.25GHz
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IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
1+605.97 грн
5+453.99 грн
10+402.83 грн
В кошику  од. на суму  грн.
IPD60R280P7S IPD60R280P7S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E45A84CBF8C749&compId=IPD60R280P7S.pdf?ci_sign=1564dce193aafb1b5380bf961fddff3a8557bcbb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
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IPD60R600P7ATMA1 IPD60R600P7ATMA1 INFINEON TECHNOLOGIES infineon-ipd60r600p7-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Power dissipation: 30W
Pulsed drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
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IPD60R600PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Case: PG-TO252-3
Mounting: SMD
Version: ESD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.219Ω
Power dissipation: 31W
Drain current: 4A
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 14A
Drain-source voltage: 600V
Technology: CoolMOS™ PFD7
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IPD60R180P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+83.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)
118+3.65 грн
130+3.08 грн
250+2.72 грн
1000+2.36 грн
3000+2.31 грн
Мінімальне замовлення: 118
В кошику  од. на суму  грн.
BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)
42+10.42 грн
65+6.23 грн
250+4.96 грн
1000+4.88 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BSS205NH6327XTSA1 BSS205NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 5989 шт:
термін постачання 21-30 дні (днів)
18+24.10 грн
23+17.58 грн
28+14.55 грн
38+10.55 грн
50+8.18 грн
100+6.56 грн
214+4.40 грн
588+4.16 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 6303 шт:
термін постачання 21-30 дні (днів)
20+22.38 грн
30+13.67 грн
50+9.56 грн
100+8.23 грн
500+6.01 грн
1000+5.30 грн
3000+4.43 грн
6000+4.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 5941 шт:
термін постачання 21-30 дні (днів)
23+18.94 грн
36+11.35 грн
42+9.67 грн
58+6.99 грн
100+6.19 грн
500+4.92 грн
1000+4.56 грн
3000+4.12 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
50+57.67 грн
Мінімальне замовлення: 50
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ICE3A1065ELJFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
50+115.34 грн
Мінімальне замовлення: 50
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5A929452E74A&compId=IPC100N04S5L1R1.pdf?ci_sign=f8bb6dfa7d8c8c00542f9aa706c257086e3c08b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
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IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
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IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA66647F3E474A&compId=IPC100N04S5L2R6.pdf?ci_sign=a9ba21c0f1b95979b0e81c2e0b59aa5e9169c864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
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IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
товару немає в наявності
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IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
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IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; 150W; DPAK; automotive industry
Case: DPAK
Mounting: SMD
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+62.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2101STRPBF INFINEON TECHNOLOGIES infineon-irs2101-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2500+49.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFB4020PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY8C29666-24LTXI INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 8-bit
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
на замовлення 1637 шт:
термін постачання 21-30 дні (днів)
260+878.83 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
CY8C20396A-24LQXI INFINEON TECHNOLOGIES Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Clock frequency: 24MHz
Kind of core: 8-bit
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
490+483.74 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
IPB123N10N3GATMA1 IPB123N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BADF5E3B00A11C&compId=IPB123N10N3G-DTE.pdf?ci_sign=18749469d85cdd8fcc825ad705ac3b9f22b73cd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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AIHD04N60RATMA1 AIHD04N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA427AB6E31820&compId=AIHD04N60R.pdf?ci_sign=dcd0fb202ad805a55910c32a432f29f8924ef561 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Gate charge: 27nC
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA47033238F820&compId=AIHD04N60RF.pdf?ci_sign=50811ec2801f1a9e015cf51dff02af3193b8f3d1 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™
Turn-on time: 19ns
Gate charge: 27nC
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
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BCR112 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C047218843DAF1A6F5005056AB5A8F&compId=bcr112series.pdf?ci_sign=d5bf832fad7f3133f513aabca068cb74703f607c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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IPD65R250E6XTMA1 IPD65R250E6XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D36BB609B1BF&compId=IPD65R250E6-DTE.pdf?ci_sign=1e26743aef67611033c5d4bb27513635a50357d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.25Ω
Drain current: 16.1A
Gate-source voltage: ±20V
Power dissipation: 208W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
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BSC027N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA94C5CA18E259&compId=TLE4268G.pdf?ci_sign=206b89d3d44db8a7ad9e5b1d89050884c81d51d0 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Output voltage: 5V
Input voltage: 5.5...45V
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
4+108.46 грн
5+91.12 грн
25+84.72 грн
100+78.33 грн
250+71.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAT68E6327HTSA1 BAT68E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Power dissipation: 0.15W
на замовлення 2733 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
37+10.87 грн
43+9.51 грн
50+7.99 грн
54+7.43 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BAT165E6327HTSA1 BAT165E6327HTSA1 INFINEON TECHNOLOGIES BAT165E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 0.75A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.74V
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BAT6804E6327HTSA1 BAT6804E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.5V
Power dissipation: 0.15W
на замовлення 5175 шт:
термін постачання 21-30 дні (днів)
22+19.80 грн
28+14.71 грн
32+12.63 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BCR533E6327HTSA1 BCR533E6327HTSA1 INFINEON TECHNOLOGIES bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)
36+12.05 грн
41+9.75 грн
54+7.45 грн
100+6.80 грн
250+5.99 грн
1000+4.88 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BCR583E6327HTSA1 BCR583E6327HTSA1 INFINEON TECHNOLOGIES bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2440 шт:
термін постачання 21-30 дні (днів)
46+9.47 грн
77+5.20 грн
100+4.64 грн
250+4.29 грн
500+4.08 грн
1000+3.72 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BAT5405E6327HTSA1 BAT5405E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.2A
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Semiconductor structure: common cathode; double
Max. off-state voltage: 30V
на замовлення 4547 шт:
термін постачання 21-30 дні (днів)
46+9.47 грн
65+6.23 грн
71+5.67 грн
90+4.44 грн
100+4.04 грн
500+3.96 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BCR401UE6327HTSA1 BCR401UE6327HTSA1 INFINEON TECHNOLOGIES dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V DC
на замовлення 5450 шт:
термін постачання 21-30 дні (днів)
17+26.68 грн
20+20.14 грн
23+17.98 грн
26+15.67 грн
100+15.19 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BSP372NH6327XTSA1 BSP372NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A752039388310B&compId=BSP372NH6327XTSA1.pdf?ci_sign=a6d7ddd6c52e49955daaad2485cc68445ea0abcb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
на замовлення 851 шт:
термін постачання 21-30 дні (днів)
7+67.14 грн
10+42.12 грн
44+21.58 грн
50+21.50 грн
120+20.38 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IAUC60N04S6L030HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IAUC60N04S6L039ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IAUC60N04S6L045HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IAUC60N04S6N031HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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AIMZH120R030M1TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C06CBFEA1080E1&compId=AIMZH120R030M1T.pdf?ci_sign=97cb2fd1cfc604781222b30e784519533171ccf0
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 49A; Idm: 176A; 163W
Application: automotive industry
Drain current: 49A
Power dissipation: 163W
Pulsed drain current: 176A
Case: TO247-4
Drain-source voltage: 1.2kV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Technology: CoolSiC™; SiC
On-state resistance: 60mΩ
товару немає в наявності
В кошику  од. на суму  грн.
BCR401U pVersion=0046&contRep=ZT&docId=E1C047218843E8F1A6F5005056AB5A8F&compId=bcr401u.pdf?ci_sign=8c4875baf069b50202c526638961a01025db956a
BCR401U
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V DC
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
25+17.98 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
XMC1403Q048X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q048X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
товару немає в наявності
В кошику  од. на суму  грн.
XMC1403Q064X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q064X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
товару немає в наявності
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XMC4104F64F64ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104F64F64ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 35
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
товару немає в наявності
В кошику  од. на суму  грн.
XMC4108F64K64ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4108F64K64ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
товару немає в наявності
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XMC4104Q48F64ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48F64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 21
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104Q48K64ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 21
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
товару немає в наявності
В кошику  од. на суму  грн.
XMC4108Q48K64ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4108Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4504F100K512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F100K512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 128kB SRAM; 512kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
товару немає в наявності
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XMC4100Q48F128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4100Q48F128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
товару немає в наявності
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XMC4104Q48F128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48F128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
товару немає в наявності
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XMC4504F144F512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F144F512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
товару немає в наявності
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BGT24LTR11N16E6327XTSA1 BGT24LTR11.pdf
BGT24LTR11N16E6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3.2...3.4V DC
Noise Figure: 10dB
Open-loop gain: 26dB
Frequency: 24...24.25GHz
товару немає в наявності
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IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+605.97 грн
5+453.99 грн
10+402.83 грн
В кошику  од. на суму  грн.
IPD60R280P7S pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E45A84CBF8C749&compId=IPD60R280P7S.pdf?ci_sign=1564dce193aafb1b5380bf961fddff3a8557bcbb
IPD60R280P7S
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
товару немає в наявності
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IPD60R600P7ATMA1 infineon-ipd60r600p7-datasheet-en.pdf
IPD60R600P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Power dissipation: 30W
Pulsed drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
товару немає в наявності
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IPD60R600PFD7SAUMA1 Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Case: PG-TO252-3
Mounting: SMD
Version: ESD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.219Ω
Power dissipation: 31W
Drain current: 4A
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 14A
Drain-source voltage: 600V
Technology: CoolMOS™ PFD7
товару немає в наявності
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IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+83.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BCR185E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba
BCR185E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
118+3.65 грн
130+3.08 грн
250+2.72 грн
1000+2.36 грн
3000+2.31 грн
Мінімальне замовлення: 118
В кошику  од. на суму  грн.
BCR135SH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.42 грн
65+6.23 грн
250+4.96 грн
1000+4.88 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BSS205NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846
BSS205NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 5989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.10 грн
23+17.58 грн
28+14.55 грн
38+10.55 грн
50+8.18 грн
100+6.56 грн
214+4.40 грн
588+4.16 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS806NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc
BSS806NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 6303 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.38 грн
30+13.67 грн
50+9.56 грн
100+8.23 грн
500+6.01 грн
1000+5.30 грн
3000+4.43 грн
6000+4.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BSS806NEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a
BSS806NEH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 5941 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.94 грн
36+11.35 грн
42+9.67 грн
58+6.99 грн
100+6.19 грн
500+4.92 грн
1000+4.56 грн
3000+4.12 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+57.67 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
ICE3A1065ELJFKLA1 Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+115.34 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPB100N04S303ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02
IPB100N04S303ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R9 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716
IPC100N04S5-1R9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53
IPC100N04S5-1R2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908
IPC100N04S5-1R7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5L-1R1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5A929452E74A&compId=IPC100N04S5L1R1.pdf?ci_sign=f8bb6dfa7d8c8c00542f9aa706c257086e3c08b3
IPC100N04S5L-1R1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5L-1R5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2
IPC100N04S5L-1R5
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5L-1R9 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc
IPC100N04S5L-1R9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5L-2R6 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA66647F3E474A&compId=IPC100N04S5L2R6.pdf?ci_sign=a9ba21c0f1b95979b0e81c2e0b59aa5e9169c864
IPC100N04S5L-2R6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; 150W; DPAK; automotive industry
Case: DPAK
Mounting: SMD
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+62.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+49.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFB4020PBFXKMA1 infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29666-24LTXI Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 8-bit
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
на замовлення 1637 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
260+878.83 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
CY8C20396A-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Clock frequency: 24MHz
Kind of core: 8-bit
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
490+483.74 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
IPB123N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BADF5E3B00A11C&compId=IPB123N10N3G-DTE.pdf?ci_sign=18749469d85cdd8fcc825ad705ac3b9f22b73cd7
IPB123N10N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
AIHD04N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA427AB6E31820&compId=AIHD04N60R.pdf?ci_sign=dcd0fb202ad805a55910c32a432f29f8924ef561
AIHD04N60RATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Gate charge: 27nC
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
товару немає в наявності
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AIHD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA47033238F820&compId=AIHD04N60RF.pdf?ci_sign=50811ec2801f1a9e015cf51dff02af3193b8f3d1
AIHD04N60RFATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™
Turn-on time: 19ns
Gate charge: 27nC
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
товару немає в наявності
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BCR112 pVersion=0046&contRep=ZT&docId=E1C047218843DAF1A6F5005056AB5A8F&compId=bcr112series.pdf?ci_sign=d5bf832fad7f3133f513aabca068cb74703f607c
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R250E6XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D36BB609B1BF&compId=IPD65R250E6-DTE.pdf?ci_sign=1e26743aef67611033c5d4bb27513635a50357d7
IPD65R250E6XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.25Ω
Drain current: 16.1A
Gate-source voltage: ±20V
Power dissipation: 208W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
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BSC027N06LS5ATMA1 Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
товару немає в наявності
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TLE4268GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA94C5CA18E259&compId=TLE4268G.pdf?ci_sign=206b89d3d44db8a7ad9e5b1d89050884c81d51d0
TLE4268GXUMA2
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Output voltage: 5V
Input voltage: 5.5...45V
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.46 грн
5+91.12 грн
25+84.72 грн
100+78.33 грн
250+71.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAT68E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT68E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Power dissipation: 0.15W
на замовлення 2733 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
37+10.87 грн
43+9.51 грн
50+7.99 грн
54+7.43 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BAT165E6327HTSA1 BAT165E6327HTSA1.pdf
BAT165E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 0.75A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.74V
товару немає в наявності
В кошику  од. на суму  грн.
BAT6804E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT6804E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.5V
Power dissipation: 0.15W
на замовлення 5175 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+19.80 грн
28+14.71 грн
32+12.63 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BCR533E6327HTSA1 bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a
BCR533E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.05 грн
41+9.75 грн
54+7.45 грн
100+6.80 грн
250+5.99 грн
1000+4.88 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BCR583E6327HTSA1 bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.47 грн
77+5.20 грн
100+4.64 грн
250+4.29 грн
500+4.08 грн
1000+3.72 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BAT5405E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5405E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.2A
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Semiconductor structure: common cathode; double
Max. off-state voltage: 30V
на замовлення 4547 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.47 грн
65+6.23 грн
71+5.67 грн
90+4.44 грн
100+4.04 грн
500+3.96 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BCR401UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d
BCR401UE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V DC
на замовлення 5450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.68 грн
20+20.14 грн
23+17.98 грн
26+15.67 грн
100+15.19 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BSP372NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A752039388310B&compId=BSP372NH6327XTSA1.pdf?ci_sign=a6d7ddd6c52e49955daaad2485cc68445ea0abcb
BSP372NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
на замовлення 851 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.14 грн
10+42.12 грн
44+21.58 грн
50+21.50 грн
120+20.38 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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