Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149380) > Сторінка 2481 з 2490
| Фото | Назва | Виробник | Інформація |
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| S25FL256LAGNFM010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256LAGNFM013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256LAGNFV011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256LAGNFV013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256LDPNFI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 66MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256LDPNFI011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 66MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHBA00 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHBA03 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHI203 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHI210 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHI300 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHIA00 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHIA03 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGBHIA10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRF135B203 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Case: TO220AB Kind of channel: enhancement Mounting: THT Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.27µC On-state resistance: 8.4mΩ Gate-source voltage: ±20V Drain-source voltage: 135V Power dissipation: 441W Drain current: 91A Pulsed drain current: 512A Kind of package: tube |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| S6E2CCAL0AGL2000A | INFINEON TECHNOLOGIES |
Category: Integrated circuits - UnclassifiedDescription: S6E2CCAL0AGL2000A |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| ISG0616N10NM5HSCATMA1 | INFINEON TECHNOLOGIES |
Category: Transistors - UnclassifiedDescription: ISG0616N10NM5HSCATMA1 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| SPB20N60S5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| IRF100P219AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 316A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ISZ080N10NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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BAS4006E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Case: SOT23 Type of diode: Schottky switching Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Semiconductor structure: common anode; double Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS4005WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW Case: SOT323 Type of diode: Schottky switching Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Semiconductor structure: common cathode; double Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS4006WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW Case: SOT323 Type of diode: Schottky switching Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Semiconductor structure: common anode; double Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BAS4002LE6327XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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| BAS4005E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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| BAS4006E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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IPP90R340C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: THT Kind of channel: enhancement Polarisation: unipolar Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IPP90R340C3XKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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| IPP90R800C3XKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; 900V; 6.9A; 104W; TO220-3 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 900V Drain current: 6.9A Power dissipation: 104W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 42nC Kind of channel: enhancement |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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XMC4104F64K64ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Case: PG-LQFP-64 Supply voltage: 3.3V DC Number of A/D channels: 9 Number of inputs/outputs: 35 Kind of core: 32-bit Memory: 20kB SRAM; 64kB FLASH Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4100 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4104F64K128ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Case: PG-LQFP-64 Supply voltage: 3.3V DC Number of A/D channels: 9 Number of inputs/outputs: 35 Kind of core: 32-bit Memory: 20kB SRAM; 128kB FLASH Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4100 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4500F100K1024ACXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH Memory: 160kB SRAM; 1MB FLASH Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LQFP-100 Family: XMC4500 Operating temperature: -40...125°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Type of integrated circuit: ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4500E144F1024ACXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH Memory: 160kB SRAM; 1MB FLASH Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LFBGA-144 Family: XMC4500 Operating temperature: -40...85°C Supply voltage: 3.3V DC Number of A/D channels: 26 Number of 16bit timers: 26 Number of inputs/outputs: 91 Type of integrated circuit: ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4500E144X1024ACXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH Memory: 160kB SRAM; 1MB FLASH Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LFBGA-144 Family: XMC4500 Operating temperature: -40...105°C Supply voltage: 3.3V DC Number of A/D channels: 26 Number of 16bit timers: 26 Number of inputs/outputs: 91 Type of integrated circuit: ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PSC3M5FDS2ACQ1AQSA1 | INFINEON TECHNOLOGIES |
Category: ST microcontrollers Description: PSC3M5FDS2ACQ1AQSA1 |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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| CY7C4022KV13-933FCXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CY7C4042KV13-933FCXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CY7C4122KV13-933FCXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 8Mx18bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CY7C4142KV13-933FCXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 4Mx36bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CY7C4142KV13-933FCXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 4Mx36bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 933MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IAUS300N10S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 1315A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 216nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TLF50251EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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TLF50201EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2EDL05N06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2 Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Voltage class: 600V Type of integrated circuit: driver Technology: EiceDRIVER™ Kind of integrated circuit: high-/low-side; MOSFET gate driver Integrated circuit features: integrated bootstrap functionality Topology: MOSFET half-bridge Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ On-state resistance: 16.5mΩ Power dissipation: 78W Gate-source voltage: ±20V Drain current: 45A Drain-source voltage: 150V Polarisation: unipolar Case: CanPAK™ MZ; MG-WDSON-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IGCM06F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A Case: PG-MDIP24 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Output current: -6...6A Operating voltage: 13.5...18.5/0...400V DC Power dissipation: 23.6W Voltage class: 600V Frequency: 20kHz Kind of integrated circuit: 3-phase motor controller; IPM Protection: anti-overload OPP; undervoltage UVP Technology: ClPOS™ Mini; TRENCHSTOP™ Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Integrated circuit features: integrated bootstrap functionality |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: SMD Polarisation: unipolar On-state resistance: 1.6mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| S25FS512SDSBHB213 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24 Application: automotive Case: BGA24 Type of integrated circuit: FLASH memory Mounting: SMD Interface: QUAD SPI Kind of memory: NOR Kind of package: reel; tape Kind of interface: serial Operating temperature: -40...105°C Operating voltage: 1.7...2V Operating frequency: 80MHz Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRFR5505TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: DPAK On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 2191 шт: термін постачання 21-30 дні (днів) |
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| BFP650H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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| BCR148WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70; SOT323 Current gain: 70 Mounting: SMD Frequency: 100MHz Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BTN8962TAAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: IMC; motor controller Technology: NovalithIC™ Case: PG-TO263-7 Output current: -27...30A Number of channels: 1 Mounting: SMD On-state resistance: 14.2mΩ Operating temperature: -40...150°C Operating voltage: 5.5...40V DC Kind of package: reel; tape |
на замовлення 944 шт: термін постачання 21-30 дні (днів) |
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BCR08PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 170MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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| BCR08PNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363 Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC88; SOT363 Current gain: 70 Mounting: SMD Frequency: 170MHz Semiconductor structure: double Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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TLD21321EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 240mA Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: high-side; LED driver Integrated circuit features: linear dimming; PWM Technology: Litix™ Protection: overheating OTP Case: PG-SSOP-14-EP Output current: 240mA Number of channels: 1 Operating voltage: 5.5...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLD21313EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: high-side; LED driver Integrated circuit features: linear dimming; PWM Technology: Litix™ Protection: overheating OTP Case: PG-SSOP-14-EP Output current: 80mA Number of channels: 3 Operating voltage: 5.5...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPA028N04NM3SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP Mounting: THT Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Kind of package: tube Case: TO220FP Polarisation: unipolar On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 38W Drain-source voltage: 40V Drain current: 63A Pulsed drain current: 356A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPA028N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Mounting: THT Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Kind of package: tube Case: TO220FP Polarisation: unipolar Gate charge: 155nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 42W Drain-source voltage: 80V Drain current: 62A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FP20R06W1E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 20A Case: AG-EASY1B-2 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Power dissipation: 94W Technology: EasyPIM™ 1B Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Pulsed drain current: 150A Gate-source voltage: -7...23V Drain current: 45A On-state resistance: 57mΩ Power dissipation: 114W Polarisation: unipolar |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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| S25FL256LAGNFM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256LAGNFM013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256LAGNFV011 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256LAGNFV013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256LDPNFI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256LDPNFI011 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHBA00 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHBA03 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHI203 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHI210 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHI300 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHIA00 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHIA03 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGBHIA10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| IRF135B203 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 208.04 грн |
| 9+ | 110.05 грн |
| 24+ | 103.71 грн |
| S6E2CCAL0AGL2000A |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: S6E2CCAL0AGL2000A
Category: Integrated circuits - Unclassified
Description: S6E2CCAL0AGL2000A
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 1527.89 грн |
| ISG0616N10NM5HSCATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: ISG0616N10NM5HSCATMA1
Category: Transistors - Unclassified
Description: ISG0616N10NM5HSCATMA1
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 231.91 грн |
| SPB20N60S5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 190.13 грн |
| IRF100P219AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| ISZ080N10NM6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 65.65 грн |
| BAS4006E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
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| BAS4005WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Max. off-state voltage: 40V
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| BAS4006WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Semiconductor structure: common anode; double
Max. off-state voltage: 40V
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| BAS4002LE6327XTMA1 |
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на замовлення 15000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 5.29 грн |
| BAS4005E6433HTMA1 |
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на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.40 грн |
| BAS4006E6433HTMA1 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.15 грн |
| IPP90R340C3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
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| IPP90R340C3XKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 226.80 грн |
| 150+ | 189.22 грн |
| IPP90R800C3XKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 6.9A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 42nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 6.9A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 42nC
Kind of channel: enhancement
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 95.49 грн |
| XMC4104F64K64ABXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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| XMC4104F64K128ABXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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| XMC4500F100K1024ACXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Type of integrated circuit: ARM microcontroller
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| XMC4500E144F1024ACXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
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| XMC4500E144X1024ACXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Memory: 160kB SRAM; 1MB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LFBGA-144
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Type of integrated circuit: ARM microcontroller
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| PSC3M5FDS2ACQ1AQSA1 |
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 160+ | 426.31 грн |
| CY7C4022KV13-933FCXI |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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| CY7C4042KV13-933FCXC |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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| CY7C4122KV13-933FCXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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| CY7C4142KV13-933FCXC |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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| CY7C4142KV13-933FCXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
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| IAUS300N10S5N014ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhancement
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| TLF50251EL |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 213.15 грн |
| TLF50201EL |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
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| 2EDL05N06PJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Integrated circuit features: integrated bootstrap functionality
Topology: MOSFET half-bridge
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Integrated circuit features: integrated bootstrap functionality
Topology: MOSFET half-bridge
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
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| BSB165N15NZ3GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
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| IGCM06F60GAXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -6...6A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 23.6W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -6...6A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 23.6W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
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| IPB016N06L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
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| S25FS512SDSBHB213 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Application: automotive
Case: BGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Interface: QUAD SPI
Kind of memory: NOR
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Operating frequency: 80MHz
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Application: automotive
Case: BGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Interface: QUAD SPI
Kind of memory: NOR
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Operating frequency: 80MHz
Memory: 512Mb FLASH
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| IRFR5505TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.85 грн |
| 10+ | 59.30 грн |
| 25+ | 50.51 грн |
| 42+ | 22.64 грн |
| 114+ | 21.38 грн |
| BFP650H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.22 грн |
| BCR148WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 70
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 70
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.24 грн |
| BTN8962TAAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
на замовлення 944 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 347.87 грн |
| 4+ | 253.35 грн |
| 10+ | 247.02 грн |
| 11+ | 239.10 грн |
| 25+ | 231.97 грн |
| 50+ | 229.60 грн |
| BCR08PNH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.62 грн |
| 40+ | 10.45 грн |
| 100+ | 9.26 грн |
| 115+ | 8.08 грн |
| 315+ | 7.68 грн |
| BCR08PNH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.03 грн |
| TLD21321EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 240mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 240mA
Number of channels: 1
Operating voltage: 5.5...40V DC
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 240mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 240mA
Number of channels: 1
Operating voltage: 5.5...40V DC
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| TLD21313EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Operating voltage: 5.5...40V DC
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Operating voltage: 5.5...40V DC
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| IPA028N04NM3SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 38W
Drain-source voltage: 40V
Drain current: 63A
Pulsed drain current: 356A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 38W
Drain-source voltage: 40V
Drain current: 63A
Pulsed drain current: 356A
Kind of channel: enhancement
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| IPA028N08N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
Gate charge: 155nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Drain-source voltage: 80V
Drain current: 62A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
Gate charge: 155nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Drain-source voltage: 80V
Drain current: 62A
Kind of channel: enhancement
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| FP20R06W1E3B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 20A
Case: AG-EASY1B-2
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 20A
Case: AG-EASY1B-2
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
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| IMZ120R030M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1605.48 грн |















