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BSC080N03MSGATMA1 BSC080N03MSGATMA1 Infineon Technologies Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383 Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC090N03LSGATMA1 BSC090N03LSGATMA1 Infineon Technologies Infineon-BSC090N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276e193c2f Description: MOSFET N-CH 30V 13A/48A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)
4+79.82 грн
10+47.83 грн
100+31.15 грн
500+22.49 грн
1000+20.32 грн
2000+18.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSC100N03MSGATMA1 BSC100N03MSGATMA1 Infineon Technologies Infineon-BSC100N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de73c33c039c Description: MOSFET N-CH 30V 12A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
4+85.24 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 BSC120N03LSGATMA1 Infineon Technologies Infineon-BSC120N03LS-DS-v02_01-en.pdf?fileId=db3a3043183a955501189caf1e5e4010 Description: MOSFET N-CH 30V 12A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+58.12 грн
10+34.77 грн
100+22.48 грн
500+16.11 грн
1000+14.50 грн
2000+13.15 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 BSC120N03MSGATMA1 Infineon Technologies Infineon-BSC120N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de761b1d03a5 Description: MOSFET N-CH 30V 11A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 20099 шт:
термін постачання 21-31 дні (днів)
6+58.12 грн
10+34.85 грн
100+22.64 грн
500+16.30 грн
1000+14.71 грн
2000+13.37 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BSZ035N03LSGATMA1 BSZ035N03LSGATMA1 Infineon Technologies BSZ035N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cefe327502e4 Description: MOSFET N-CH 30V 20A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
3+106.16 грн
10+64.99 грн
100+43.41 грн
500+32.04 грн
1000+29.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BSZ035N03MSGATMA1 BSZ035N03MSGATMA1 Infineon Technologies BSZ035N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddeb998f02e7 Description: MOSFET N-CH 30V 18A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 11581 шт:
термін постачання 21-31 дні (днів)
4+97.64 грн
10+59.32 грн
100+39.23 грн
500+28.75 грн
1000+26.15 грн
2000+23.96 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5753 шт:
термін постачання 21-31 дні (днів)
4+89.89 грн
10+54.03 грн
100+35.61 грн
500+25.98 грн
1000+23.58 грн
2000+21.57 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies infineon-bsz050n03ms-g-datasheet-en.pdf Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
4+93.76 грн
10+56.79 грн
100+37.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ058N03MSGATMA1 BSZ058N03MSGATMA1 Infineon Technologies BSZ058N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddee2ce902ed Description: MOSFET N-CH 30V 14A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 Infineon Technologies BSZ088N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cf18620d02eb Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 Infineon Technologies BSZ088N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddf12fe902f6 Description: MOSFET N-CH 30V 11A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Obsolete
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316 Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
4+78.27 грн
10+46.86 грн
100+30.65 грн
500+22.23 грн
1000+20.13 грн
2000+18.36 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ130N03LSGATMA1 BSZ130N03LSGATMA1 Infineon Technologies BSZ130N03LS_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4035f8203fc Description: MOSFET N-CH 30V 10A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
на замовлення 25856 шт:
термін постачання 21-31 дні (днів)
6+60.44 грн
10+36.41 грн
100+23.65 грн
500+17.05 грн
1000+15.38 грн
2000+13.98 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 Infineon Technologies BSZ130N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de3b1fda0321 Description: MOSFET N-CH 30V 9A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)
5+68.97 грн
10+41.41 грн
100+27.06 грн
500+19.60 грн
1000+17.73 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
ESD1P0RFSE6327HTSA1 ESD1P0RFSE6327HTSA1 Infineon Technologies esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7 Description: TVS DIODE 70VWM 15VC SOT363-6
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V
Unidirectional Channels: 2
Supplier Device Package: PG-SOT363-PO
Voltage - Reverse Standoff (Typ): 70V (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: Ethernet, HDMI, RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
24VS2BE6327XT 24VS2BE6327XT Infineon Technologies Part_Number_Guide_Web.pdf Description: TVS DIODE 24VWM 41VC SOT23-3
товару немає в наявності
В кошику  од. на суму  грн.
ESD24VS2UE6327HTSA1 ESD24VS2UE6327HTSA1 Infineon Technologies Infineon-ESD24VS2U-DS-v01_01-en.pdf?fileId=db3a3043340fff53013413a2249d2ff3 Description: TVS DIODE 24VWM 41VC PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-SOT23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
8+38.75 грн
13+23.06 грн
100+14.66 грн
500+10.35 грн
1000+9.25 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
ESD5V0S4USE6327HTSA1 ESD5V0S4USE6327HTSA1 Infineon Technologies esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04 Description: TVS DIODE 5VWM 13VC SOT3636
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IPD031N03LGATMA1 IPD031N03LGATMA1 Infineon Technologies IP%28D%2CS%29031N03L_%20G.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
на замовлення 2829 шт:
термін постачання 21-31 дні (днів)
3+141.81 грн
10+87.01 грн
100+58.69 грн
500+43.69 грн
1000+40.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPD040N03LGATMA1 IPD040N03LGATMA1 Infineon Technologies IPD040N03LG_rev1.01.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 2393 шт:
термін постачання 21-31 дні (днів)
4+97.64 грн
10+59.10 грн
100+39.18 грн
500+28.72 грн
1000+26.14 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
3+113.91 грн
10+69.47 грн
100+46.32 грн
500+34.16 грн
1000+31.16 грн
Мінімальне замовлення: 3 шт
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IPD060N03LGATMA1 IPD060N03LGATMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 30394 шт:
термін постачання 21-31 дні (днів)
3+106.94 грн
10+65.44 грн
100+43.51 грн
500+32.00 грн
1000+29.16 грн
Мінімальне замовлення: 3 шт
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IPD075N03LGATMA1 IPD075N03LGATMA1 Infineon Technologies infineon-ipd075n03lg-datasheet-en.pdf Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
на замовлення 8392 шт:
термін постачання 21-31 дні (днів)
10+34.10 грн
13+24.48 грн
100+19.91 грн
500+16.93 грн
1000+16.91 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IPD090N03LGATMA1 IPD090N03LGATMA1 Infineon Technologies Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181 Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 91300 шт:
термін постачання 21-31 дні (днів)
4+89.11 грн
10+53.73 грн
100+35.35 грн
500+25.78 грн
1000+23.40 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BCR401UE6327HTSA1 BCR401UE6327HTSA1 Infineon Technologies dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 244288 шт:
термін постачання 21-31 дні (днів)
15+20.85 грн
22+13.87 грн
25+12.31 грн
100+9.94 грн
250+9.17 грн
500+8.71 грн
1000+8.19 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
BSC025N03LS G BSC025N03LS G Infineon Technologies download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1 Description: MOSFET N-CH 30V 100A TDSON-8
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE6282GXUMA1 TLE6282GXUMA1 Infineon Technologies TLE6282G.pdf Description: IC MOTOR DRIVER 7.5V-60V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 7.5V ~ 60V
Technology: Power MOSFET
Supplier Device Package: PG-DSO-20-45
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRFR3706CPBF IRFR3706CPBF Infineon Technologies irfr3706cpbf.pdf Description: MOSFET N-CH 20V 75A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRF7534D1PBF IRF7534D1PBF Infineon Technologies IRF7534D1PbF.pdf description Description: MOSFET P-CH 20V 4.3A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1300 шт
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IRFR120NCPBF IRFR120NCPBF Infineon Technologies irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 750 шт
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IRLR7807ZCPBF IRLR7807ZCPBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 43A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 675 шт
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IRFR5305CPBF IRFR5305CPBF Infineon Technologies IRFR%20U5305.pdf Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 450 шт
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IRLR7811WCPBF IRLR7811WCPBF Infineon Technologies irlr7811wcpbf.pdf Description: MOSFET N-CH 30V 64A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 600 шт
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IR2102SPBF IR2102SPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRFU4104-701PBF IRFU4104-701PBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 40V 42A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IRF8707PBF IRF8707PBF Infineon Technologies irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b description Description: MOSFET N-CH 30V 11A 8SO
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
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IRS2168DSPBF IRS2168DSPBF Infineon Technologies irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
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IRF7459PBF IRF7459PBF Infineon Technologies IRF7459PbF.pdf Description: MOSFET N-CH 20V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRL3713SPBF IRL3713SPBF Infineon Technologies irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d description Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
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IPS1031SPBF IPS1031SPBF Infineon Technologies IPS1031%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 3.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRG4PC40KDE206P IRG4PC40KDE206P Infineon Technologies irg4pc40kdpbf.pdf?fileId=5546d462533600a401535644123422d6 Description: IGBT 600V 42A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 53ns/110ns
Switching Energy: 950µJ (on), 760µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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IRFU3709Z-701P IRFU3709Z-701P Infineon Technologies IRFR3709Z,%20IRFU3709Z.pdf Description: MOSFET N-CH 30V 86A IPAK
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PVT312SPBF PVT312SPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 190MA 0-250V
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 190 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
на замовлення 3479 шт:
термін постачання 21-31 дні (днів)
1+348.71 грн
10+299.08 грн
25+285.62 грн
50+258.87 грн
100+250.00 грн
250+238.72 грн
500+226.74 грн
1000+218.94 грн
В кошику  од. на суму  грн.
IRFR6215CPBF IRFR6215CPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 375 шт
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IRL3716SPBF IRL3716SPBF Infineon Technologies IRL3716%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 180A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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PVT212SPBF PVT212SPBF Infineon Technologies pvt212.pdf?fileId=5546d462533600a4015356841646295d Description: SSR RELAY SPST-NO 550MA 0-150V
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
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IRG4RC10UPBF IRG4RC10UPBF Infineon Technologies IRG4RC10UPbF.pdf Description: IGBT 600V 8.5A 38W DPAK
товару немає в наявності
 Мінімальне замовлення: 1050 шт
В кошику  од. на суму  грн.
IRF8721PBF IRF8721PBF Infineon Technologies irf8721pbf.pdf?fileId=5546d462533600a40153560d86f61d79 description Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRG4RC10SPBF IRG4RC10SPBF Infineon Technologies IRG4RC10SPbF.pdf Description: IGBT 600V 14A TO-252AA
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 140µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 25ns/630ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRF7240PBF IRF7240PBF Infineon Technologies irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2 Description: MOSFET P-CH 40V 10.5A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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IRF8736PBF IRF8736PBF Infineon Technologies irf8736pbf.pdf?fileId=5546d462533600a40153560d9e661d7f description Description: MOSFET N-CH 30V 18A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 15 V
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IRFR540ZPBF IRFR540ZPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 description Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IRLR3410CPBF IRLR3410CPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 100V 17A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRFR3303CPBF IRFR3303CPBF Infineon Technologies IRFR%2CU3303.pdf Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 675 шт
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IRFR5505CPBF IRFR5505CPBF Infineon Technologies IRF%28R%2CU%295505PbF.pdf Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 675 шт
В кошику  од. на суму  грн.
IRF7854PBF IRF7854PBF Infineon Technologies irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29 Description: MOSFET N-CH 80V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IPS1031RPBF IPS1031RPBF Infineon Technologies IPS1031%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
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IRF8714PBF IRF8714PBF Infineon Technologies irf8714pbf.pdf?fileId=5546d462533600a40153560d6f0f1d71 description Description: MOSFET N-CH 30V 14A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IR2166SPBF IR2166SPBF Infineon Technologies ir2166.pdf?fileId=5546d462533600a4015355c9049416c0 Description: IC PFC/BALLAST CNTL 50KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 50kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10V ~ 17V
Supplier Device Package: 16-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
товару немає в наявності
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BSC080N03MSGATMA1 Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383
BSC080N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
товару немає в наявності
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BSC090N03LSGATMA1 Infineon-BSC090N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276e193c2f
BSC090N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/48A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+79.82 грн
10+47.83 грн
100+31.15 грн
500+22.49 грн
1000+20.32 грн
2000+18.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSC100N03MSGATMA1 Infineon-BSC100N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de73c33c039c
BSC100N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+85.24 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 Infineon-BSC120N03LS-DS-v02_01-en.pdf?fileId=db3a3043183a955501189caf1e5e4010
BSC120N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+58.12 грн
10+34.77 грн
100+22.48 грн
500+16.11 грн
1000+14.50 грн
2000+13.15 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 Infineon-BSC120N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de761b1d03a5
BSC120N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 20099 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+58.12 грн
10+34.85 грн
100+22.64 грн
500+16.30 грн
1000+14.71 грн
2000+13.37 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BSZ035N03LSGATMA1 BSZ035N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cefe327502e4
BSZ035N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+106.16 грн
10+64.99 грн
100+43.41 грн
500+32.04 грн
1000+29.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BSZ035N03MSGATMA1 BSZ035N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddeb998f02e7
BSZ035N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 11581 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+97.64 грн
10+59.32 грн
100+39.23 грн
500+28.75 грн
1000+26.15 грн
2000+23.96 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ050N03LSGATMA1 BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee
BSZ050N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5753 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+89.89 грн
10+54.03 грн
100+35.61 грн
500+25.98 грн
1000+23.58 грн
2000+21.57 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ050N03MSGATMA1 infineon-bsz050n03ms-g-datasheet-en.pdf
BSZ050N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+93.76 грн
10+56.79 грн
100+37.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ058N03MSGATMA1 BSZ058N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddee2ce902ed
BSZ058N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03LSGATMA1 BSZ088N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113cf18620d02eb
BSZ088N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ088N03MSGATMA1 BSZ088N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddf12fe902f6
BSZ088N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A/40A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Obsolete
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316
BSZ100N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+78.27 грн
10+46.86 грн
100+30.65 грн
500+22.23 грн
1000+20.13 грн
2000+18.36 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ130N03LSGATMA1 BSZ130N03LS_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4035f8203fc
BSZ130N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
на замовлення 25856 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+60.44 грн
10+36.41 грн
100+23.65 грн
500+17.05 грн
1000+15.38 грн
2000+13.98 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de3b1fda0321
BSZ130N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9A/35A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+68.97 грн
10+41.41 грн
100+27.06 грн
500+19.60 грн
1000+17.73 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
ESD1P0RFSE6327HTSA1 esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7
ESD1P0RFSE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 70VWM 15VC SOT363-6
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V
Unidirectional Channels: 2
Supplier Device Package: PG-SOT363-PO
Voltage - Reverse Standoff (Typ): 70V (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: Ethernet, HDMI, RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
24VS2BE6327XT Part_Number_Guide_Web.pdf
24VS2BE6327XT
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 41VC SOT23-3
товару немає в наявності
В кошику  од. на суму  грн.
ESD24VS2UE6327HTSA1 Infineon-ESD24VS2U-DS-v01_01-en.pdf?fileId=db3a3043340fff53013413a2249d2ff3
ESD24VS2UE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 41VC PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-SOT23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+38.75 грн
13+23.06 грн
100+14.66 грн
500+10.35 грн
1000+9.25 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
ESD5V0S4USE6327HTSA1 esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04
ESD5V0S4USE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 13VC SOT3636
товару немає в наявності
В кошику  од. на суму  грн.
IPD031N03LGATMA1 IP%28D%2CS%29031N03L_%20G.pdf
IPD031N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
на замовлення 2829 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+141.81 грн
10+87.01 грн
100+58.69 грн
500+43.69 грн
1000+40.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPD040N03LGATMA1 IPD040N03LG_rev1.01.pdf
IPD040N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 2393 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+97.64 грн
10+59.10 грн
100+39.18 грн
500+28.72 грн
1000+26.14 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD050N03LGATMA1 Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f
IPD050N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+113.91 грн
10+69.47 грн
100+46.32 грн
500+34.16 грн
1000+31.16 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPD060N03LGATMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPD060N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 30394 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+106.94 грн
10+65.44 грн
100+43.51 грн
500+32.00 грн
1000+29.16 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPD075N03LGATMA1 infineon-ipd075n03lg-datasheet-en.pdf
IPD075N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
на замовлення 8392 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+34.10 грн
13+24.48 грн
100+19.91 грн
500+16.93 грн
1000+16.91 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IPD090N03LGATMA1 Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181
IPD090N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 91300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+89.11 грн
10+53.73 грн
100+35.35 грн
500+25.78 грн
1000+23.40 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BCR401UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d
BCR401UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 244288 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
15+20.85 грн
22+13.87 грн
25+12.31 грн
100+9.94 грн
250+9.17 грн
500+8.71 грн
1000+8.19 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
BSC025N03LS G download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1
BSC025N03LS G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE6282GXUMA1 TLE6282G.pdf
TLE6282GXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 7.5V-60V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 7.5V ~ 60V
Technology: Power MOSFET
Supplier Device Package: PG-DSO-20-45
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRFR3706CPBF irfr3706cpbf.pdf
IRFR3706CPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 75A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
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IRF7534D1PBF description IRF7534D1PbF.pdf
IRF7534D1PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.3A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1300 шт
В кошику  од. на суму  грн.
IRFR120NCPBF irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d
IRFR120NCPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику  од. на суму  грн.
IRLR7807ZCPBF fundamentals-of-power-semiconductors
IRLR7807ZCPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 43A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 675 шт
В кошику  од. на суму  грн.
IRFR5305CPBF IRFR%20U5305.pdf
IRFR5305CPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
IRLR7811WCPBF irlr7811wcpbf.pdf
IRLR7811WCPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 64A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
IR2102SPBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRFU4104-701PBF IR_PartNumberingSystem.pdf
IRFU4104-701PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
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IRF8707PBF description irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
товару немає в наявності
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IRS2168DSPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
товару немає в наявності
В кошику  од. на суму  грн.
IRF7459PBF IRF7459PbF.pdf
IRF7459PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
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IRL3713SPBF description irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d
IRL3713SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
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IPS1031SPBF IPS1031%28S%2CR%29PbF.pdf
IPS1031SPBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 3.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
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IRG4PC40KDE206P irg4pc40kdpbf.pdf?fileId=5546d462533600a401535644123422d6
IRG4PC40KDE206P
Виробник: Infineon Technologies
Description: IGBT 600V 42A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 53ns/110ns
Switching Energy: 950µJ (on), 760µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFU3709Z-701P IRFR3709Z,%20IRFU3709Z.pdf
IRFU3709Z-701P
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A IPAK
товару немає в наявності
В кошику  од. на суму  грн.
PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312SPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 190MA 0-250V
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 190 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
на замовлення 3479 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+348.71 грн
10+299.08 грн
25+285.62 грн
50+258.87 грн
100+250.00 грн
250+238.72 грн
500+226.74 грн
1000+218.94 грн
В кошику  од. на суму  грн.
IRFR6215CPBF IR_PartNumberingSystem.pdf
IRFR6215CPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 375 шт
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IRL3716SPBF IRL3716%28S%2CL%29PbF.pdf
IRL3716SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 180A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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PVT212SPBF pvt212.pdf?fileId=5546d462533600a4015356841646295d
PVT212SPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
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IRG4RC10UPBF IRG4RC10UPbF.pdf
IRG4RC10UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
товару немає в наявності
Мінімальне замовлення: 1050 шт
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IRF8721PBF description irf8721pbf.pdf?fileId=5546d462533600a40153560d86f61d79
IRF8721PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRG4RC10SPBF IRG4RC10SPbF.pdf
IRG4RC10SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 14A TO-252AA
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 140µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 25ns/630ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRF7240PBF irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2
IRF7240PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 10.5A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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IRF8736PBF description irf8736pbf.pdf?fileId=5546d462533600a40153560d9e661d7f
IRF8736PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 15 V
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IRFR540ZPBF description irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IRLR3410CPBF Part_Number_Guide_Web.pdf
IRLR3410CPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRFR3303CPBF IRFR%2CU3303.pdf
IRFR3303CPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 675 шт
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IRFR5505CPBF IRF%28R%2CU%295505PbF.pdf
IRFR5505CPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 675 шт
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IRF7854PBF irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29
IRF7854PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IPS1031RPBF IPS1031%28S%2CR%29PbF.pdf
IPS1031RPBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
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IRF8714PBF description irf8714pbf.pdf?fileId=5546d462533600a40153560d6f0f1d71
IRF8714PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IR2166SPBF ir2166.pdf?fileId=5546d462533600a4015355c9049416c0
IR2166SPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CNTL 50KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 50kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10V ~ 17V
Supplier Device Package: 16-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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