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IPP80N04S3-04 IPP80N04S3-04 Infineon Technologies IPx80N04S3-04.pdf Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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IPP80N04S306AKSA1 IPP80N04S306AKSA1 Infineon Technologies IPx80N04S3-06.pdf Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 52µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S205AKSA1 IPP80N06S205AKSA1 Infineon Technologies Infineon-IPP_B80N06S2_05-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43228475740&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
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IPP80N06S207AKSA1 IPP80N06S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S208AKSA1 IPP80N06S208AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43227675735&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
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IPP80N06S209AKSA1 IPP80N06S209AKSA1 Infineon Technologies Infineon-IPP_B80N06S2_09-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333ec35ad0&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
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IPP80N06S2H5AKSA1 IPP80N06S2H5AKSA1 Infineon Technologies Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4333c6c5ac2&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IPP80N06S2L05AKSA1 IPP80N06S2L05AKSA1 Infineon Technologies INFNS09525-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2L06AKSA1 IPP80N06S2L06AKSA1 Infineon Technologies IPB%2CIPP80N06S2L-06.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S2L-07 IPP80N06S2L-07 Infineon Technologies Infineon-IPP_B80N06S2L_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43232455757&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
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IPP80N06S2L09AKSA1 IPP80N06S2L09AKSA1 Infineon Technologies Infineon-IPP_B80N06S2L_09-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333f475ad4&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
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IPP80N06S2L11AKSA1 IPP80N06S2L11AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2L_11-DS-v01_01-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333e375ac6&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
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IPP80N06S2LH5AKSA1 IPP80N06S2LH5AKSA1 Infineon Technologies IPB,IPP80N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
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IPP80N08S207AKSA1 IPP80N08S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IPP80N08S2L07AKSA1 IPP80N08S2L07AKSA1 Infineon Technologies Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP90R1K0C3XKSA1 IPP90R1K0C3XKSA1 Infineon Technologies IPP90R1K0C3_1%5B1%5D.0.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a30432313ff5e0123a88d39df5bf4 Description: MOSFET N-CH 900V 5.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 100 V
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IPP90R1K2C3XKSA1 IPP90R1K2C3XKSA1 Infineon Technologies IPP90R1K2C3_1%5B1%5D.0.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a30432313ff5e0123a89fe8085c04 Description: MOSFET N-CH 900V 5.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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IPP90R340C3XKSA1 IPP90R340C3XKSA1 Infineon Technologies Infineon-IPP90R340C3-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123a8a4f73e5c14 Description: MOSFET N-CH 900V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
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IPP90R500C3XKSA1 IPP90R500C3XKSA1 Infineon Technologies Infineon-IPP90R500C3-DS-v01_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123a8acd7d05c24 Description: MOSFET N-CH 900V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
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IPP90R800C3XKSA1 IPP90R800C3XKSA1 Infineon Technologies IPP90R800C3_1%5B1%5D.0.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a30432313ff5e0123a8b1344d5c34 Description: MOSFET N-CH 900V 6.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPS075N03LGAKMA1 IPS075N03LGAKMA1 Infineon Technologies IP%28D%2CS%2CF%2CU%29075N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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IPS12CN10LGBKMA1 IPS12CN10LGBKMA1 Infineon Technologies IPP12CN10L_Rev1.02.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b0626df011b2615b04b6fd1 Description: MOSFET N-CH 100V 69A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 69A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 50 V
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IPS50R520CP IPS50R520CP Infineon Technologies IPS50R520CP.pdf Description: MOSFET N-CH 550V 7.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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IPU075N03L G IPU075N03L G Infineon Technologies IP%28D%2CS%2CF%2CU%29075N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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IPU103N08N3 G IPU103N08N3 G Infineon Technologies IPU103N08N3_G.pdf Description: MOSFET N-CH 80V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
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IPU135N08N3 G IPU135N08N3 G Infineon Technologies IPU135N08N3_G.pdf Description: MOSFET N-CH 80V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
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IPW50R140CPFKSA1 IPW50R140CPFKSA1 Infineon Technologies IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
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IPW50R199CPFKSA1 IPW50R199CPFKSA1 Infineon Technologies IPW50R199CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d39454833 Description: MOSFET N-CH 550V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
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IPW50R250CPFKSA1 IPW50R250CPFKSA1 Infineon Technologies IPW50R250CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d39d36530c48 Description: MOSFET N-CH 500V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
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IPW50R299CPFKSA1 IPW50R299CPFKSA1 Infineon Technologies IPW50R299CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d325d19e0c29 Description: MOSFET N-CH 550V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPW50R350CPFKSA1 IPW50R350CPFKSA1 Infineon Technologies IPW50R350CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d315d5de0c1b Description: MOSFET N-CH 550V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
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IPW50R399CPFKSA1 IPW50R399CPFKSA1 Infineon Technologies IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847 Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
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IPW90R1K0C3FKSA1 IPW90R1K0C3FKSA1 Infineon Technologies IPW90R1K0C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8da2ee4e1071 Description: MOSFET N-CH 900V 5.7A TO247-3
товару немає в наявності
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IPW90R1K2C3FKSA1 IPW90R1K2C3FKSA1 Infineon Technologies IPW90R1K2C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043183a955501184ffdc4fc54e2 Description: MOSFET N-CH 900V 5.1A TO-247
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IPW90R340C3FKSA1 IPW90R340C3FKSA1 Infineon Technologies IPW90R340C3_1.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a955501183c3a02810087 Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
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IPW90R500C3FKSA1 IPW90R500C3FKSA1 Infineon Technologies IPW90R500C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8dac43c41085 Description: MOSFET N-CH 900V 11A TO-247
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
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ISO1H801GAUMA1 ISO1H801GAUMA1 Infineon Technologies Final_Datasheet_ISO1H801_V23_sept.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30431b3e89eb011b8dc2d55810ac Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 15V ~ 30V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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ISO1H802G ISO1H802G Infineon Technologies ISO1H802G.pdf Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
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ISO1H811GAUMA1 ISO1H811GAUMA1 Infineon Technologies Preliminary+Datasheet+ISO1H811G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208af1f76c0075 Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+363.87 грн
1600+342.91 грн
Мінімальне замовлення: 800
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ISO1H812GAUMA1 ISO1H812GAUMA1 Infineon Technologies Preliminary+Datasheet+ISO1H812G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208afa6861007a Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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ISO1H815GAUMA1 ISO1H815GAUMA1 Infineon Technologies ISO1H815_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f6ed7d956a76 Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+412.34 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
ISO1H816GAUMA1 ISO1H816GAUMA1 Infineon Technologies ISO1H816_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f700bb736a89 Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+360.09 грн
Мінімальне замовлення: 800
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ISP452HUMA1 ISP452HUMA1 Infineon Technologies Infineon-ISP452-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42957ef40c3&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+68.22 грн
8000+64.43 грн
Мінімальне замовлення: 4000
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ISP742RIFUMA1 ISP742RIFUMA1 Infineon Technologies Infineon-ISP742RI-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c90494d49231e Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+50.96 грн
5000+47.95 грн
7500+47.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP752RFUMA1 ISP752RFUMA1 Infineon Technologies Infineon-ISP752R-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c904955152321 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
2500+47.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP752TFUMA1 ISP752TFUMA1 Infineon Technologies Infineon-ISP752T-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c90495f762324 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
2500+51.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP75N ISP75N Infineon Technologies ISP75N.pdf Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
товару немає в наявності
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ISP762TFUMA1 ISP762TFUMA1 Infineon Technologies Infineon-ISP762T-DataSheet-v01_50-EN.pdf?fileId=5546d4626c1f3dc3016c9049670c2327 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+62.39 грн
5000+58.76 грн
7500+58.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP772TFUMA1 ISP772TFUMA1 Infineon Technologies Infineon-ISP772T-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c904970db232a&redirId=115369 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+73.80 грн
5000+69.54 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ITS410E2HKSA1 ITS410E2HKSA1 Infineon Technologies ITS410E2.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Features: Auto Restart, Status Flag
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-3
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ITS410E2E3043HKSA1 ITS410E2E3043HKSA1 Infineon Technologies ITS410E2.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Features: Auto Restart, Status Flag
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-43
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
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ITS4140NHUMA1 ITS4140NHUMA1 Infineon Technologies Infineon-ITS4140N-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4298dc34130&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 4.9V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 200mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+43.88 грн
8000+41.38 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ITS4141DBUMA1 ITS4141DBUMA1 Infineon Technologies Infineon-ITS4141D_20060322-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42967d340dd&ack=t Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 12V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
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ITS4141NHUMA1 ITS4141NHUMA1 Infineon Technologies Infineon-ITS4141N-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b429624b40d3&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 12V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+64.15 грн
8000+60.57 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ITS4142NHUMA1 ITS4142NHUMA1 Infineon Technologies Infineon-ITS4142N_20060309-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4296b0840e1&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 12V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
ITS428L2ATMA1 ITS428L2ATMA1 Infineon Technologies Infineon-ITS428L2-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a30431c69a49d011cdcc9a1fd41df&ack=t Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 43V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 9414 шт:
термін постачання 21-31 дні (днів)
2500+79.66 грн
5000+75.10 грн
7500+74.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ITS436L2HKSA1 ITS436L2HKSA1 Infineon Technologies Infineon-ITS436L2_20060328-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428cd263e7d&ack=t Description: IC SWITCH HISIDE SMART TO252-5
товару немає в наявності
В кошику  од. на суму  грн.
ITS4880RCUMA1 ITS4880RCUMA1 Infineon Technologies Infineon-ITS4880R-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4295fb340cf&ack=t Description: IC PWR SWITCH N-CHAN 1:1 DSO-36
Packaging: Tape & Reel (TR)
Features: Auto Restart, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-26
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+375.65 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
ITS612N1HKSA1 ITS612N1HKSA1 Infineon Technologies Infineon-ITS612N1_20060328-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428d9203e94&ack=t Description: IC SWITCH HISIDE SMART TO220-7
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ITS612N1E3230HKSA1 ITS612N1E3230HKSA1 Infineon Technologies ITS612N1_PROFET®.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Tube
Features: Auto Restart, Status Flag
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-230
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
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IPP80N04S3-04 IPx80N04S3-04.pdf
IPP80N04S3-04
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
товару немає в наявності
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IPP80N04S306AKSA1 IPx80N04S3-06.pdf
IPP80N04S306AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 52µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPP80N06S205AKSA1 Infineon-IPP_B80N06S2_05-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43228475740&ack=t
IPP80N06S205AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
товару немає в наявності
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IPP80N06S207AKSA1 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t
IPP80N06S207AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPP80N06S208AKSA1 Infineon-IPP_B_I80N06S2_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43227675735&ack=t
IPP80N06S208AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
товару немає в наявності
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IPP80N06S209AKSA1 Infineon-IPP_B80N06S2_09-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333ec35ad0&ack=t
IPP80N06S209AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
товару немає в наявності
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IPP80N06S2H5AKSA1 Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4333c6c5ac2&ack=t
IPP80N06S2H5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IPP80N06S2L05AKSA1 INFNS09525-1.pdf?t.download=true&u=5oefqw
IPP80N06S2L05AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2L06AKSA1 IPB%2CIPP80N06S2L-06.pdf
IPP80N06S2L06AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S2L-07 Infineon-IPP_B80N06S2L_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43232455757&ack=t
IPP80N06S2L-07
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
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IPP80N06S2L09AKSA1 Infineon-IPP_B80N06S2L_09-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333f475ad4&ack=t
IPP80N06S2L09AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
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IPP80N06S2L11AKSA1 Infineon-IPP_B_I80N06S2L_11-DS-v01_01-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333e375ac6&ack=t
IPP80N06S2L11AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
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IPP80N06S2LH5AKSA1 IPB,IPP80N06S2L-H5.pdf
IPP80N06S2LH5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
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IPP80N08S207AKSA1 Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t
IPP80N08S207AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IPP80N08S2L07AKSA1 Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t
IPP80N08S2L07AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP90R1K0C3XKSA1 IPP90R1K0C3_1%5B1%5D.0.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a30432313ff5e0123a88d39df5bf4
IPP90R1K0C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 100 V
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IPP90R1K2C3XKSA1 IPP90R1K2C3_1%5B1%5D.0.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a30432313ff5e0123a89fe8085c04
IPP90R1K2C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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IPP90R340C3XKSA1 Infineon-IPP90R340C3-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123a8a4f73e5c14
IPP90R340C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
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IPP90R500C3XKSA1 Infineon-IPP90R500C3-DS-v01_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123a8acd7d05c24
IPP90R500C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
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IPP90R800C3XKSA1 IPP90R800C3_1%5B1%5D.0.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a30432313ff5e0123a8b1344d5c34
IPP90R800C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPS075N03LGAKMA1 IP%28D%2CS%2CF%2CU%29075N03L_G.pdf
IPS075N03LGAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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IPS12CN10LGBKMA1 IPP12CN10L_Rev1.02.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b0626df011b2615b04b6fd1
IPS12CN10LGBKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 69A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 69A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 50 V
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IPS50R520CP IPS50R520CP.pdf
IPS50R520CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 7.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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IPU075N03L G IP%28D%2CS%2CF%2CU%29075N03L_G.pdf
IPU075N03L G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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IPU103N08N3 G IPU103N08N3_G.pdf
IPU103N08N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
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IPU135N08N3 G IPU135N08N3_G.pdf
IPU135N08N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
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IPW50R140CPFKSA1 IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf
IPW50R140CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
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IPW50R199CPFKSA1 IPW50R199CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d39454833
IPW50R199CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
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IPW50R250CPFKSA1 IPW50R250CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d39d36530c48
IPW50R250CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
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IPW50R299CPFKSA1 IPW50R299CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d325d19e0c29
IPW50R299CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPW50R350CPFKSA1 IPW50R350CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d315d5de0c1b
IPW50R350CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
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IPW50R399CPFKSA1 IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847
IPW50R399CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
товару немає в наявності
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IPW90R1K0C3FKSA1 IPW90R1K0C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8da2ee4e1071
IPW90R1K0C3FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.7A TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
IPW90R1K2C3FKSA1 IPW90R1K2C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043183a955501184ffdc4fc54e2
IPW90R1K2C3FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO-247
товару немає в наявності
В кошику  од. на суму  грн.
IPW90R340C3FKSA1 IPW90R340C3_1.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a955501183c3a02810087
IPW90R340C3FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
товару немає в наявності
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IPW90R500C3FKSA1 IPW90R500C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8dac43c41085
IPW90R500C3FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO-247
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ISO1H801GAUMA1 Final_Datasheet_ISO1H801_V23_sept.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30431b3e89eb011b8dc2d55810ac
ISO1H801GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 15V ~ 30V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
товару немає в наявності
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ISO1H802G ISO1H802G.pdf
ISO1H802G
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
товару немає в наявності
В кошику  од. на суму  грн.
ISO1H811GAUMA1 Preliminary+Datasheet+ISO1H811G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208af1f76c0075
ISO1H811GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+363.87 грн
1600+342.91 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
ISO1H812GAUMA1 Preliminary+Datasheet+ISO1H812G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208afa6861007a
ISO1H812GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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ISO1H815GAUMA1 ISO1H815_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f6ed7d956a76
ISO1H815GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+412.34 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
ISO1H816GAUMA1 ISO1H816_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f700bb736a89
ISO1H816GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+360.09 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
ISP452HUMA1 Infineon-ISP452-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42957ef40c3&ack=t
ISP452HUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+68.22 грн
8000+64.43 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ISP742RIFUMA1 Infineon-ISP742RI-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c90494d49231e
ISP742RIFUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+50.96 грн
5000+47.95 грн
7500+47.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP752RFUMA1 Infineon-ISP752R-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c904955152321
ISP752RFUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+47.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP752TFUMA1 Infineon-ISP752T-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c90495f762324
ISP752TFUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+51.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP75N ISP75N.pdf
ISP75N
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
товару немає в наявності
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ISP762TFUMA1 Infineon-ISP762T-DataSheet-v01_50-EN.pdf?fileId=5546d4626c1f3dc3016c9049670c2327
ISP762TFUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+62.39 грн
5000+58.76 грн
7500+58.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISP772TFUMA1 Infineon-ISP772T-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c904970db232a&redirId=115369
ISP772TFUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+73.80 грн
5000+69.54 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ITS410E2HKSA1 ITS410E2.pdf
ITS410E2HKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Features: Auto Restart, Status Flag
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-3
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ITS410E2E3043HKSA1 ITS410E2.pdf
ITS410E2E3043HKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Features: Auto Restart, Status Flag
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-43
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ITS4140NHUMA1 Infineon-ITS4140N-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4298dc34130&ack=t
ITS4140NHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 4.9V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 200mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+43.88 грн
8000+41.38 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ITS4141DBUMA1 Infineon-ITS4141D_20060322-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42967d340dd&ack=t
ITS4141DBUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 12V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ITS4141NHUMA1 Infineon-ITS4141N-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b429624b40d3&ack=t
ITS4141NHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 12V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+64.15 грн
8000+60.57 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ITS4142NHUMA1 Infineon-ITS4142N_20060309-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4296b0840e1&ack=t
ITS4142NHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 12V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
ITS428L2ATMA1 Infineon-ITS428L2-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a30431c69a49d011cdcc9a1fd41df&ack=t
ITS428L2ATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 43V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 9414 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+79.66 грн
5000+75.10 грн
7500+74.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ITS436L2HKSA1 Infineon-ITS436L2_20060328-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428cd263e7d&ack=t
ITS436L2HKSA1
Виробник: Infineon Technologies
Description: IC SWITCH HISIDE SMART TO252-5
товару немає в наявності
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ITS4880RCUMA1 Infineon-ITS4880R-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4295fb340cf&ack=t
ITS4880RCUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-36
Packaging: Tape & Reel (TR)
Features: Auto Restart, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-26
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+375.65 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
ITS612N1HKSA1 Infineon-ITS612N1_20060328-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428d9203e94&ack=t
ITS612N1HKSA1
Виробник: Infineon Technologies
Description: IC SWITCH HISIDE SMART TO220-7
товару немає в наявності
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ITS612N1E3230HKSA1 ITS612N1_PROFET®.pdf
ITS612N1E3230HKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Tube
Features: Auto Restart, Status Flag
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-230
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
В кошику  од. на суму  грн.
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