Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119471) > Сторінка 1989 з 1992

Обрати Сторінку:   [  << Попередня Сторінка ]  1 199 398 597 796 995 1194 1393 1592 1791 1984 1985 1986 1987 1988 1989 1990 1991 1992  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IRS2302SPBF IRS2302SPBF INFINEON TECHNOLOGIES IRS2302SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 650ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
BAT15099RE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
товару немає в наявності
В кошику  од. на суму  грн.
BAT6402VH6327XTSA1 BAT6402VH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
на замовлення 6025 шт:
термін постачання 14-30 дні (днів)
18+25.13 грн
22+19.33 грн
26+16.50 грн
100+8.24 грн
250+6.48 грн
500+5.61 грн
1000+5.00 грн
3000+4.48 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SPP80P06PHXKSA1 SPP80P06PHXKSA1 INFINEON TECHNOLOGIES SPP80P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
Power dissipation: 340W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
2+290.75 грн
5+210.82 грн
10+181.66 грн
50+138.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS3142DATMA1 BTS3142DATMA1 INFINEON TECHNOLOGIES BTS3142D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-3
On-state resistance: 28mΩ
Number of channels: 1
Output current: 4.6A
Output voltage: 42V
Power dissipation: 59W
Mounting: SMD
Technology: HITFET®
товару немає в наявності
В кошику  од. на суму  грн.
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES IPI040N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
6+70.00 грн
10+62.50 грн
50+56.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06N3GXKSA1 IPP040N06N3GXKSA1 INFINEON TECHNOLOGIES IPP040N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
на замовлення 336 шт:
термін постачання 14-30 дні (днів)
4+148.97 грн
10+76.66 грн
50+73.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP040N06NF2SAKMA1 IPP040N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
6+86.15 грн
10+50.41 грн
50+41.50 грн
100+40.08 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NXKSA1 INFINEON TECHNOLOGIES Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
6+85.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NAKSA1 IPP040N06NAKSA1 INFINEON TECHNOLOGIES IPP040N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Technology: OptiMOS™
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IPA040N06NM5SXKSA1 IPA040N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Pulsed drain current: 288A
товару немає в наявності
В кошику  од. на суму  грн.
IAUZ40N06S5L050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±16V
Pulsed drain current: 252A
товару немає в наявності
В кошику  од. на суму  грн.
IAUZ40N06S5N050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Pulsed drain current: 241A
товару немає в наявності
В кошику  од. на суму  грн.
IAUZ40N06S5N105ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Pulsed drain current: 120A
товару немає в наявності
В кошику  од. на суму  грн.
1EDC40I12AHXUMA1 1EDC40I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
товару немає в наявності
В кошику  од. на суму  грн.
1EDC20I12AHXUMA1 1EDC20I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
товару немає в наявності
В кошику  од. на суму  грн.
1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
на замовлення 578 шт:
термін постачання 14-30 дні (днів)
3+203.71 грн
5+169.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISP14EP15LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.29A; 5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.29A
Power dissipation: 5W
Case: SOT223
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHN010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHN013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHVV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T12DHN010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T12DHN020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IRFR2607ZTRPBF IRFR2607ZTRPBF INFINEON TECHNOLOGIES IRFR2607ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 45A
Power dissipation: 110W
Drain-source voltage: 75V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 INFINEON TECHNOLOGIES BSC030N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280P6XKSA1 IPP60R280P6XKSA1 INFINEON TECHNOLOGIES IPP60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R280P6FKSA1 IPW60R280P6FKSA1 INFINEON TECHNOLOGIES IPW60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CY15B016J-SXA INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CY15B016J-SXAT INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CY15B016J-SXET INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 3...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXA INFINEON TECHNOLOGIES Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXAT INFINEON TECHNOLOGIES Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXE INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXET INFINEON TECHNOLOGIES Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
TC297TX128F300NBCKXUMA1 INFINEON TECHNOLOGIES Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; Core: 32-bit
Type of integrated circuit: microcontroller
Mounting: SMD
Kind of core: 32-bit
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
1000+4897.92 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES AIKQ120N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
товару немає в наявності
В кошику  од. на суму  грн.
PVT312LSPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 0.17A
Manufacturer series: PV
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 0.5ms
On-state resistance: 15Ω
на замовлення 1561 шт:
термін постачання 14-30 дні (днів)
50+337.42 грн
100+282.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVT312PBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 320mA
Manufacturer series: PV
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 0.5ms
On-state resistance: 10Ω
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
50+337.42 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVT312SPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 190mA
Manufacturer series: PV
Relay variant: PhotoMOS
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 2011 шт:
термін постачання 14-30 дні (днів)
50+337.42 грн
100+282.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVT312LPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 300mA
Manufacturer series: PV
Mounting: THT
Case: DIP6
Body dimensions: 8.63x3.42x6.47mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 0.5ms
On-state resistance: 15Ω
на замовлення 580 шт:
термін постачання 14-30 дні (днів)
50+337.42 грн
100+282.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 INFINEON TECHNOLOGIES BSB280N15NZ3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
товару немає в наявності
В кошику  од. на суму  грн.
CY7C25652KV18-400BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Kind of package: in-tray
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 400MHz
Memory organisation: 2Mx36bit
товару немає в наявності
В кошику  од. на суму  грн.
CY7C25652KV18-500BZXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Kind of package: in-tray
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 500MHz
Memory organisation: 2Mx36bit
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 83W
Case: PG-TO252
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ C6
Pulsed drain current: 30A
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 INFINEON TECHNOLOGIES Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R3K3C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Power dissipation: 18.1W
Case: PG-TO252
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ C6
Pulsed drain current: 4A
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R3K4CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 29W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Power dissipation: 29W
Case: DPAK; TO252
On-state resistance: 3.17Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES BSP89H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
11+41.28 грн
13+31.66 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPT059N15N3ATMA1 IPT059N15N3ATMA1 INFINEON TECHNOLOGIES IPT059N15N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES IKCM10H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
1+613.81 грн
3+535.80 грн
5+509.97 грн
10+502.47 грн
В кошику  од. на суму  грн.
IRGP4263DPBF IRGP4263DPBF INFINEON TECHNOLOGIES IRGP4263DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Power dissipation: 325W
Collector current: 90A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IRFL4310TRPBF IRFL4310TRPBF INFINEON TECHNOLOGIES irfl4310pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BFP842ESDH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 3.7V; 40mA; 120mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 3.7V
Collector current: 40mA
Power dissipation: 0.12W
Case: SOT343
Current gain: 150
Mounting: SMD
Frequency: 60GHz
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+19.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES irf7425pbf.pdf irf7425pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 4464 шт:
термін постачання 14-30 дні (днів)
6+87.94 грн
10+61.66 грн
25+53.33 грн
50+49.16 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRF7240TRPBF IRF7240TRPBF INFINEON TECHNOLOGIES irf7240pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IDWD50E120D7XKSA1 INFINEON TECHNOLOGIES Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
товару немає в наявності
В кошику  од. на суму  грн.
IDWD50E65E7XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0 Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
товару немає в наявності
В кошику  од. на суму  грн.
BC857BWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 220
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
S29JL032J70TFI320 S29JL032J70TFI320 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 32Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29JL064J55TFI000 S29JL064J55TFI000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
IRS2302SPBF IRS2302SPBF.pdf
IRS2302SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 650ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
BAT15099RE6327HTSA1 Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
товару немає в наявності
В кошику  од. на суму  грн.
BAT6402VH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6402VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
на замовлення 6025 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.13 грн
22+19.33 грн
26+16.50 грн
100+8.24 грн
250+6.48 грн
500+5.61 грн
1000+5.00 грн
3000+4.48 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SPP80P06PHXKSA1 SPP80P06PHXKSA1-DTE.pdf
SPP80P06PHXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
Power dissipation: 340W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+290.75 грн
5+210.82 грн
10+181.66 грн
50+138.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS3142DATMA1 BTS3142D.pdf
BTS3142DATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-3
On-state resistance: 28mΩ
Number of channels: 1
Output current: 4.6A
Output voltage: 42V
Power dissipation: 59W
Mounting: SMD
Technology: HITFET®
товару немає в наявності
В кошику  од. на суму  грн.
IPI040N06N3GXKSA1 IPI040N06N3G-DTE.pdf
IPI040N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+70.00 грн
10+62.50 грн
50+56.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06N3GXKSA1 IPP040N06N3G-DTE.pdf
IPP040N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
на замовлення 336 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+148.97 грн
10+76.66 грн
50+73.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP040N06NF2SAKMA1 Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86
IPP040N06NF2SAKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+86.15 грн
10+50.41 грн
50+41.50 грн
100+40.08 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NXKSA1 Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+85.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NAKSA1 IPP040N06NAKSA1-DTE.pdf
IPP040N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Technology: OptiMOS™
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IPA040N06NM5SXKSA1 Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa
IPA040N06NM5SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Pulsed drain current: 288A
товару немає в наявності
В кошику  од. на суму  грн.
IAUZ40N06S5L050ATMA1 Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±16V
Pulsed drain current: 252A
товару немає в наявності
В кошику  од. на суму  грн.
IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Pulsed drain current: 241A
товару немає в наявності
В кошику  од. на суму  грн.
IAUZ40N06S5N105ATMA1 Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Pulsed drain current: 120A
товару немає в наявності
В кошику  од. на суму  грн.
1EDC40I12AHXUMA1 1EDCxxX12AH.pdf
1EDC40I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
товару немає в наявності
В кошику  од. на суму  грн.
1EDC20I12AHXUMA1 1EDCxxX12AH.pdf
1EDC20I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
товару немає в наявності
В кошику  од. на суму  грн.
1EDC60I12AHXUMA1 1EDCxxX12AH.pdf
1EDC60I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
на замовлення 578 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+203.71 грн
5+169.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.29A; 5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.29A
Power dissipation: 5W
Case: SOT223
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHN010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHVV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T12DHN010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T12DHN020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IRFR2607ZTRPBF IRFR2607ZTRPBF.pdf
IRFR2607ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 45A
Power dissipation: 110W
Drain-source voltage: 75V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSC030N08NS5ATMA1 BSC030N08NS5-DTE.pdf
BSC030N08NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R280P6XKSA1 IPP60R280P6-DTE.pdf
IPP60R280P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R280P6FKSA1 IPW60R280P6-DTE.pdf
IPW60R280P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CY15B016J-SXA download
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CY15B016J-SXAT download
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CY15B016J-SXET download
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 3...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXA Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXAT Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXE download
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
CY15B256J-SXET Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
TC297TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; Core: 32-bit
Type of integrated circuit: microcontroller
Mounting: SMD
Kind of core: 32-bit
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1000+4897.92 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIKQ120N60CTXKSA1 AIKQ120N60CT.pdf
AIKQ120N60CTXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
товару немає в наявності
В кошику  од. на суму  грн.
PVT312LSPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 0.17A
Manufacturer series: PV
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 0.5ms
On-state resistance: 15Ω
на замовлення 1561 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+337.42 грн
100+282.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 320mA
Manufacturer series: PV
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 0.5ms
On-state resistance: 10Ω
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+337.42 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 190mA
Manufacturer series: PV
Relay variant: PhotoMOS
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 2011 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+337.42 грн
100+282.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVT312LPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 300mA
Manufacturer series: PV
Mounting: THT
Case: DIP6
Body dimensions: 8.63x3.42x6.47mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 0.5ms
On-state resistance: 15Ω
на замовлення 580 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+337.42 грн
100+282.48 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSB280N15NZ3GXUMA1 BSB280N15NZ3G-DTE.pdf
BSB280N15NZ3GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
товару немає в наявності
В кошику  од. на суму  грн.
CY7C25652KV18-400BZXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Kind of package: in-tray
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 400MHz
Memory organisation: 2Mx36bit
товару немає в наявності
В кошику  од. на суму  грн.
CY7C25652KV18-500BZXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Kind of package: in-tray
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 500MHz
Memory organisation: 2Mx36bit
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380C6ATMA1 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 83W
Case: PG-TO252
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ C6
Pulsed drain current: 30A
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Power dissipation: 18.1W
Case: PG-TO252
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ C6
Pulsed drain current: 4A
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R3K4CEAUMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 29W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Power dissipation: 29W
Case: DPAK; TO252
On-state resistance: 3.17Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSP89H6327XTSA1 BSP89H6327XTSA1.pdf
BSP89H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+41.28 грн
13+31.66 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPT059N15N3ATMA1 IPT059N15N3-DTE.pdf
IPT059N15N3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IKCM10H60GAXKMA1 IKCM10H60GA.pdf
IKCM10H60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+613.81 грн
3+535.80 грн
5+509.97 грн
10+502.47 грн
В кошику  од. на суму  грн.
IRGP4263DPBF IRGP4263DPBF.pdf
IRGP4263DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Power dissipation: 325W
Collector current: 90A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IRFL4310TRPBF irfl4310pbf.pdf
IRFL4310TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 3.7V; 40mA; 120mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 3.7V
Collector current: 40mA
Power dissipation: 0.12W
Case: SOT343
Current gain: 150
Mounting: SMD
Frequency: 60GHz
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+19.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRF7425TRPBF irf7425pbf.pdf irf7425pbf.pdf
IRF7425TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 4464 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+87.94 грн
10+61.66 грн
25+53.33 грн
50+49.16 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRF7240TRPBF irf7240pbf.pdf
IRF7240TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IDWD50E120D7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
товару немає в наявності
В кошику  од. на суму  грн.
IDWD50E65E7XKSA1 Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
товару немає в наявності
В кошику  од. на суму  грн.
BC857BWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 220
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
S29JL032J70TFI320 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI320
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 32Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29JL064J55TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55TFI000
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 199 398 597 796 995 1194 1393 1592 1791 1984 1985 1986 1987 1988 1989 1990 1991 1992  [ Наступна Сторінка >> ]